JP2013051247A - Light-emitting device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device manufacturing method which ensures high quality by enabling stable deposition of a transparent conductive film of a low light absorption rate.SOLUTION: A light-emitting device comprises: a semiconductor layer 12 in which an n-type semiconductor layer 121, a luminescent layer 122 and a p-type semiconductor layer 123 are laminated on a translucent substrate 11; a transparent conductive film 13 deposited by a deposition material composed of a metal oxide and laminated on the semiconductor layer 12; and a reflection part 14 laminated on the transparent conductive film 13. A process of depositing the transparent conductive film comprises: a sputtering process of depositing an original film of the transparent conductive film on the semiconductor layer by sputtering; and performing a two-staged anneal step including a first anneal process of annealing the original film by an oxygen containing atmosphere gas, and a second anneal process of annealing the original film by a non-oxygen containing gas. The first anneal process and the second anneal process are performed at an atmospheric temperature in a range higher than 600°C and lower than 680°C.

Description

  The present invention relates to a method for manufacturing a light-emitting element including a semiconductor layer including a light-emitting layer stacked on a substrate, and a reflection portion that reflects light from the light-emitting layer toward the substrate.

  As a conventional light emitting element that is flip-chip mounted on a mounting substrate, for example, the one described in Patent Document 1 is known.

  The light emitting element described in Patent Document 1 will be described with reference to FIG. In the light-emitting element 100, an n-type semiconductor layer 102, a light-emitting layer 103, and a p-type semiconductor layer 104 are stacked on a base substrate 101, and an anode electrode 110 is further formed.

The anode electrode 110 includes a first transparent conductive film 111 formed of a material such as Ni, Pd, Pt, Cr, Mn, Ta, Cu, and Fe on the p-type semiconductor layer 104, and a first transparent conductive film. A single material selected from the group consisting of ITO, IZO, ZnO, In ₂ O ₃ , SnO ₂ , Mg _x Zn _1-x O (x ≦ 0.5), amorphous AlGaN, GaN, and SiON on the film 111. The formed second transparent conductive film 112 and two types of dielectric films formed on the second transparent conductive film 112 and having different refractive indexes for reflecting the light emitted from the light emitting layer 103 were alternately laminated. A plurality of multilayer reflective film layers 113, a metal reflective film 114 made of an Ag metal material having a high reflectance with respect to light from the light emitting layer 103, a barrier metal film 115 formed on the metal reflective film 114, Barrier metal It is constituted by an external connection metal film 116 made of a metal material and formed on 115.

  In the light emitting element 100, the transparent conductive film is made of a transparent metal material made of a metal oxide, whereby light from the light emitting layer 103 is efficiently directed toward the multilayer reflective film layer 113 and the metal reflective film 114, and the multilayer reflective film. Light reflected by the layer 113 and the metal reflective film 114 can be efficiently transmitted toward the base substrate 101.

  The transparent conductive film is not a flip-chip type, but the technique described in Patent Document 2 is known.

In Patent Document 2, a transparent conductive film (translucent positive electrode) is formed of ITO (In ₂ O ₃ —SnO ₂ ), AZnO (ZnO—Al ₂ O ₃ ), ISnO (In ₂ O ₃ —ZnO), GZO ( The film is formed of a material including at least one kind of ZnO—GeO ₂ ). When this transparent conductive film is formed on the p-type semiconductor layer, the light-transmitting positive electrode of the light-transmitting oxide conductive material is formed by sputtering or vapor deposition in a state in which oxygen is less than the stoichiometric composition. .Annealing in a 1% to 50% oxygen-containing atmosphere with heating at a temperature rising rate in the range of 20 ° C./min to 500 ° C./min and holding at a temperature in the range of 250 ° C. to 600 ° C. for about 30 seconds to 10 minutes And then re-annealing at a temperature in the range of 200 ° C. to 500 ° C. for 1 minute to 20 minutes in an oxygen-free atmosphere with N ₂ gas having a dew point of −30 ° C. or less at 99.9% or more. ing. By forming a transparent conductive film by this manufacturing method, the standard forward voltage (Vf) is low, the translucent positive electrode has high translucency and low sheet resistance, low standard forward voltage (Vf), and p-type semiconductor layer High joint strength can be obtained.

JP 2007-258276 A JP 2007-287786 A

  In the conventional light emitting device 100, first and second transparent conductive films 111 and 112 are provided on the p-type semiconductor layer 104, and a multilayer reflective film layer 113 made of a dielectric film is provided on the second transparent conductive film 112. Therefore, in order to reflect a large amount of light with the multilayer reflective film layer 113 and improve the light extraction efficiency, the second transparent conductive film 112 transmits a large amount of light without blocking the light from the light emitting layer 103. It is important to let

  However, according to the method for manufacturing a semiconductor light emitting device described in Patent Document 2, the resistance value can be reduced by annealing the transparent conductive film in an oxygen-containing atmosphere and re-annealing in an oxygen-free atmosphere. It has been found that there is a problem that the light absorption rate of the transparent conductive film varies. That is, a transparent conductive film having a high light absorption rate may be formed. If it becomes so, it will become a light emitting element with low brightness | luminance.

  Therefore, even if the manufacturing method of the semiconductor light emitting element described in Patent Document 2 is an effective method for reducing the forward voltage, the light absorption rate of the transparent conductive film is low in order to ensure mass productivity. In addition, there is a need for a technique capable of forming a transparent conductive film with little variation in light absorption.

  In view of the above, an object of the present invention is to provide a method for manufacturing a light-emitting element capable of ensuring high quality by stably forming a transparent conductive film having a low light absorption rate.

  In the method for manufacturing a light-emitting element of the present invention, a raw film to be a transparent conductive film is formed by sputtering on a semiconductor layer with an oxygen-free atmosphere gas while targeting a film-forming material made of a metal oxide. The film is annealed with an oxygen-containing atmosphere gas after being annealed with an oxygen-free atmosphere gas.

  According to the method for manufacturing a light-emitting element of the present invention, the first annealing step or the second annealing step, or both annealing is performed at an atmospheric temperature higher than 600 ° C. and lower than 680 ° C. Since the light absorptance of the conductive film can be suppressed and variation in the light absorptance can be suppressed, a high quality can be ensured by forming a transparent conductive film having a low light absorption rate stably.

Sectional drawing of the light emitting element which concerns on embodiment of this invention The figure for demonstrating the conduction | electrical_connection area and reflection area | region on the transparent conductive film of the light emitting element shown in FIG. (A) is a diagram showing the relationship between the time of two-step annealing and the ambient temperature, (B) is a diagram showing the relationship between the time of two-step annealing and the amount of gas. The figure which shows the relationship between the wavelength of the invention by the two-step annealing in Example 1, and the comparative product by the one-step annealing and the light absorption rate The figure which shows the dispersion | variation in the light absorptance in Example 2. Sectional drawing which shows the conventional light emitting element

  A first invention of the present application includes a light-transmitting substrate, a semiconductor layer in which an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are stacked on the substrate, and a metal oxide that is stacked on the semiconductor layer. A method for manufacturing a light-emitting element including a transparent conductive film formed using a film forming material and a reflective portion stacked on the transparent conductive film, wherein the film forming material made of a metal oxide is used as a target, and oxygen A sputtering process for forming a transparent conductive film original film on the semiconductor layer by sputtering with a non-containing atmosphere gas, a first annealing process for annealing the original film with an oxygen-containing atmospheric gas, and oxygen-free after the first annealing process And a second annealing step for annealing with an atmospheric gas, wherein either or both the first annealing step and the second annealing step have an ambient temperature higher than 600 ° C. It is a method of manufacture.

  According to the first aspect of the present invention, the transparent conductive film formed by sputtering with an oxygen-free atmosphere gas is subjected to either the first annealing step or the second annealing step, or both annealing at 600 ° C. By performing at a higher ambient temperature, the light absorption rate of the transparent conductive film can be suppressed, and variations in the light absorption rate can be suppressed.

  According to a second aspect of the present invention, there is provided a method for manufacturing a light-emitting element, wherein the ambient temperature of either one or both of the first annealing step and the second annealing step is higher than 630 ° C.

  According to the second invention, the optical absorptance of the transparent conductive film is obtained by setting the atmospheric temperature of either one or both of the first annealing step and the second annealing step to higher than 600 ° C. and further higher than 630 ° C. The dispersion of the light absorptance can be further suppressed while keeping low.

  A third invention of the present application is characterized in that, in the first invention, the transparent conductive film is formed using a metal oxide containing In, Sn, and Ga or a metal oxide containing In, Zn, and Ga. This is a method for manufacturing a light emitting device.

  According to the third invention, the transparent conductive film can be formed from a metal oxide containing In, Sn, Ga, and Al or a metal oxide containing In, Zn, Ga, and Al. By doing so, when the In concentration is optimized in the transparent conductive film, the contact resistance with the semiconductor layer can be adjusted to a good value.

  A fourth invention of the present application is the method for manufacturing a light emitting element according to the third invention, wherein the transparent conductive film is formed of ITO.

  According to the fourth invention, the transparent conductive film can be formed of ITO.

  A fifth invention of the present application is the method for manufacturing a light emitting element according to any one of the first to third inventions, wherein the transparent conductive film is formed with a thickness of 10 nm or more.

  According to 5th invention, a transparent conductive film can be formed into a film at 10 nm or more.

(Embodiment)
A light-emitting element according to an embodiment of the present invention will be described with reference to FIGS. The light-emitting element shown in FIG. 1 is a blue LED chip with a light emission wavelength of 455 nm that is flip-chip mounted on the mounting substrate B with bumps K interposed.

  In the light-emitting element, a semiconductor layer 12 in which an n-type semiconductor layer 121, a light-emitting layer 122, and a p-type semiconductor layer 123 are stacked is provided on a light-transmitting substrate 11 that is an insulating substrate. A buffer layer may be provided between the translucent substrate 11 and the n-type semiconductor layer 121.

  As the translucent substrate 11, a substrate that transmits light from the light emitting layer 122 can be used. As the translucent substrate 11, for example, a sapphire substrate, a SiC substrate, a ZnO substrate, or the like can be used.

  The n-type semiconductor layer 121 can be an n-type GaN layer. The n-type semiconductor layer 121 is not limited to a single layer structure, and may have a multilayer structure. For example, when the translucent substrate 11 is a sapphire substrate, a buffer layer such as an AlN layer or an AlGaN layer is interposed, and the n-type semiconductor layer 121 is placed on the n-type AlGaN layer and the n-type AlGaN layer. It is good also as a structure which laminated | stacked the layer.

  The light emitting layer 122 includes at least Ga and N, and a desired light emission wavelength can be obtained by including an appropriate amount of In as necessary. The light-emitting layer 122 may have a single-layer structure, but for example, may have a multi-quantum well structure in which at least a pair of InGaN layers and GaN layers are alternately stacked. The light emitting layer 122 can have a multi-quantum well structure. In the present embodiment, the composition of the InGaN layer is set so that the emission peak wavelength of the light emitting layer 122 is 450 nm. Note that the light-emitting layer 122 can have a single quantum well structure or a single-layer structure.

  The p-type semiconductor layer 123 can be a p-type GaN layer. Further, the p-type semiconductor layer 123 is not limited to a single layer structure, and may have a multilayer structure. In that case, for example, the p-type semiconductor layer 123 can be a multilayer film in which a p-type AlGaN layer and a p-type GaN layer are stacked.

  The semiconductor layer 12 has a GZO film having a refractive index smaller than that of the p-type semiconductor layer 123, for example, a ternary system selected from the group consisting of GZO (Ga-doped ZnO), AZO (Al-doped ZnO), and ITO. A transparent conductive film 13 made of this metal oxide from a film forming material is formed. In the present embodiment, the film thickness of the transparent conductive film 13 is set to 10 nm.

  By forming the transparent conductive film 13 with such a material, the contact between the transparent conductive film 13 and the p-type semiconductor layer 123 can be made ohmic contact.

  A reflective portion 14 is laminated on the transparent conductive film 13. The reflective portion 14 includes a low refractive index dielectric film 141, an adhesive dielectric film 142, and a reflective conductive film 143.

  The low-refractive-index dielectric film 141 excludes the peripheral edge C1 of the transparent conductive film 13 and the lattice part C2 in which circular regions are arranged in columns and rows as conductive areas for conducting the transparent conductive film 13 and the reflective conductive film 143. Provided in a region assigned as a reflection region R1 for reflecting light transmitted from the transparent conductive film 13. The low refractive index dielectric film 141 has a refractive index smaller than that of the p-type semiconductor layer 123 and smaller than that of the transparent conductive film 13.

  The low refractive index dielectric film 141 is formed of a first low refractive index dielectric film 141a and a second low refractive index dielectric film 141b. The film thickness of the first low refractive index dielectric film 141a is preferably 3 nm or more, and more preferably 5 nm or more, from the viewpoint of the amount of oxygen. Further, it is preferably 6 nm or more.

The low-refractive index dielectric film 141 is a dielectric film formed from, for example, SiO ₂ having a refractive index of 1.46. The low refractive index dielectric film 141 made of SiO ₂ is set to a film thickness of 300 nm. The low refractive index dielectric film 141 may be a silicon compound having a refractive index smaller than that of the p-type semiconductor layer 123 other than the SiO ₂ film, and may be a SiO 2 _N film or the like. The refractive index can also be formed by Al ₂ O ₃ of about 1.6 to 1.9.

The adhesive dielectric film 142 is formed of a dielectric made of an oxide with a metal element, and is formed on the low refractive index dielectric film 141. In the present embodiment, the adhesive dielectric film 142 is formed of Al ₂ O ₃ having a refractive index of about 1.6 to 1.9. The film thickness of the adhesive dielectric film 142 made of an Al ₂ O ₃ film is 30 nm. The adhesive dielectric film 142 can be a Ta ₂ O ₆ film, a ZrO ₂ film, an NbO ₂ film, or a TiO ₂ film in addition to an Al ₂ O ₃ film.

  The reflective conductive film 143 includes a conductive region (peripheral portion C1 and lattice portion C2) that is conductive with the transparent conductive film 13, and a reflective region R1 that reflects light that has passed through the low refractive index dielectric film 141 and the adhesive dielectric film 142. It is a metal film which coats. In the first embodiment, the reflective conductive film 143 is an Ag film having a high reflectance. The reflective conductive film 143 made of an Ag film can have a thickness of 100 nm. This film thickness can be set, for example, in the range of about 50 nm to 200 nm. The reflective conductive film 143 can be an Al film in addition to an Ag film. However, the reflective conductive film 143 is preferably an Ag film because the Ag film has a higher reflectance than the Al film.

  The n electrode 15 is a cathode electrode provided in a region on the n type semiconductor layer 121 obtained by etching the p type semiconductor layer 123, the light emitting layer 122, and a part of the n type semiconductor layer 121. The n-electrode 15 is provided at a diagonal position of the translucent substrate 11 formed in a rectangular shape. The n electrode 15 is formed by laminating a Ti layer and an Au layer. The Ti layer of the n-electrode 15 stacked on the n-type semiconductor layer 121 functions as an ohmic contact layer for the n-type semiconductor layer 121. The material of the ohmic contact layer may be, for example, Ti, V, Al, or an alloy containing any one of these metals. The Au layer laminated on the Ti layer functions as an n pad layer.

  The p-electrode 16 is an anode electrode laminated on the etched p-type semiconductor layer 123. The p electrode 16 is provided in the remaining range where the n electrode 15 is provided. The p electrode 16 is formed by stacking an Au layer, a Ti layer, and an Au layer stacked on the reflective conductive film 143. The outermost Au layer functions as a p-pad layer. The p-electrode 16 is conductively mounted on the mounting substrate B with bumps K arranged in an equally spaced matrix. In the present embodiment, the light emitting element is conductively mounted on the mounting substrate B by 5 × 5 bumps K including the bumps K for conducting the n-electrode 15.

  The manufacturing method of the light emitting element according to the embodiment of the present invention configured as described above will be described with reference to the drawings.

  The semiconductor layer 12 can be formed on the translucent substrate 11 by an epitaxial growth technique such as the MOVPE method. For example, the semiconductor layer 12 can be formed by a hydride vapor phase growth method (HVPE method), a molecular beam epitaxy method (MBE method), or the like. It is also possible to laminate.

  The transparent conductive film 13 is formed by GZO, AZO, ITO or the like. Here, a method for forming the transparent conductive film 13 will be described in detail with reference to the drawings.

  First, when the transparent conductive film 13 is formed, a sputtering process for forming an original film is first performed by a general sputtering apparatus. The sputtering apparatus generates plasma by applying energy to gas molecules in a plasma chamber by microwaves from a microwave generator (not shown), and collides the plasma with a target that is a film forming material. This is an ECR (Electron Cyclotron Resonance) sputtering apparatus that deposits a protruding film deposition material on a substrate in a film deposition chamber to form a thin film. A dense film can be formed by rotating plasma in a magnetic field to generate high-density plasma.

  When the raw film of the transparent conductive film 13 is thus formed by the sputtering process, the first annealing process is performed. This annealing step can be performed by a general annealing apparatus capable of adjusting the temperature.

  As shown in FIGS. 3A and 3B, the annealing process includes a first annealing process that anneals with an oxygen-containing atmosphere gas and a second annealing process that anneals with an oxygen-free atmosphere gas. . Hereinafter, annealing in two steps of the first annealing step and the second annealing step is referred to as two-step annealing.

In the first annealing step, O ₂ gas can be used as the oxygen-containing atmosphere gas, and argon gas, nitrogen gas, krypton gas, xenon gas, neon gas, radon gas, or a mixed gas obtained by mixing these can be used as the inert gas.

  By annealing the original film with an oxygen-containing atmosphere gas in the first annealing step, an ITO film having a low light absorption rate can be obtained.

  When the first annealing step is completed, the second annealing step is continuously performed by evacuation for discharging the atmospheric gas.

  In the second annealing step, the inert gas used in the first annealing step can be adopted as the oxygen-free atmosphere gas. For example, argon gas, nitrogen gas, krypton gas, xenon gas, neon gas, radon gas, or a mixed gas obtained by mixing them can be used.

  In this second annealing step, by annealing the original film after the first annealing step with an oxygen-free atmosphere gas, the crystal grains can be enlarged while leaving a certain amount of oxygen vacancies. The effect which reduces the light absorption rate in can be acquired. In addition, since a certain amount of oxygen deficiency remains in the transparent conductive film 13, it is possible to reduce the light absorption rate while maintaining good contact resistance with the semiconductor layer 12.

  As the atmospheric temperature in the first annealing step and the second annealing step, it is desirable to set the temperature higher than 600 ° C. in order to suppress variation in the light absorption rate. Further, if the temperature is set to 630 ° C. or higher, the degree of variation is further increased. This is desirable because it can be suppressed.

  If the atmospheric temperature during annealing is lower than 600 ° C., the variation in the light absorption rate of the transparent conductive film 13 increases. The upper limit of the ambient temperature is not particularly limited as long as it is a range that operates as a light emitting element. However, it is desirable that the upper limit of the ambient temperature be a temperature that does not cause deterioration of the characteristics of the light emitting element such that the forward current is reduced, the luminance is reduced, and the voltage drop is increased.

  Next, a low refractive index dielectric film 141 is formed. The low refractive index dielectric film 141 can be formed by sputtering. Here, a method for forming the low refractive index dielectric film 141 will be described in detail.

  First, the first low-refractive-index dielectric film 141a and the second low-refractive-index dielectric film 141b that are in contact with the transparent conductive film 13 are formed by the same sputtering apparatus as when the original film of the transparent conductive film 13 is formed. be able to.

  First, the first low refractive index dielectric film 141a is formed by sputtering in the oxide mode. Next, a second low refractive index dielectric film 141b is formed by sputtering in a metal mode. Since the second low-refractive-index dielectric film 141b is formed by sputtering in the metal mode, the sputtering rate can be made larger than that in the oxide-mode sputtering, so that the second low-refractive index having a film thickness with higher reflectivity can be obtained. The dielectric film 141b can be formed efficiently. Therefore, mass productivity can be improved.

  Note that the oxide mode refers to a mode in which a film is formed by attaching a film forming material that has been oxidized as a target surface and jumped out as an oxide. The metal mode refers to a mode in which metal particles are sputtered from a target and oxidized to form a film on a substrate.

  If the dielectric film to be the first low-refractive index dielectric film 141a and the dielectric film to be the second low-refractive index dielectric film 141b are formed, a dielectric film to be the adhesive dielectric film 142 is formed.

  Then, a mask is formed in a region to be a reflective region excluding the peripheral edge portion C1 and the lattice portion C2 of the transparent conductive film 13 which is a conductive region with the transparent conductive film 13.

  Next, the first low-refractive index dielectric film 141a, the second low-refractive index dielectric film 141b, and the adhesive dielectric film are removed by etching until the transparent conductive film 13 is exposed except for the masked reflective area. 142 is formed. Then, when the first low refractive index dielectric film 141a and the second low refractive index dielectric film 141b are formed, the mask is removed.

  Next, the reflective conductive film 143 is formed with an Ag film or an Al film over the entire conductive region and the reflective region. Then, the n-type electrode 15 is covered in a region where the p-type semiconductor layer 123, the light emitting layer 122, and a part of the n-type semiconductor layer 121 are removed by etching, and the p-type electrode 16 is formed so as to cover the entire transparent conductive film 13 and the reflective portion 14. By forming the light emitting element, a light emitting element can be manufactured.

Example 1
In Example 1, as Invention 1, a single film of ITO was formed on a substrate to form a transparent conductive film 13, and the light absorptance was measured by irradiating light with a wavelength of 455 nm.

  The sputtering conditions are as follows.

(A) Target: Al
(B) Atmospheric gas: Ar gas (flow rate: 50 sccm pressure: 0.2 Pa)
(C) Microwave power: 500 W / RF power: 500 W
(D) O ₂ gas flow rate in oxide mode: 11 ccm
(E) O ₂ gas flow rate in metal mode: 10 ccm
The film thickness of the Al ₂ O ₃ film formed by sputtering as the low refractive index dielectric film 141 is 30 nm.

  The first annealing step was performed under the following conditions.

(A) Atmospheric gas: N ₂ gas (flow rate: 20 L / min, pressure: 0.2 Pa)
O ₂ gas (flow rate: 5 L / min, pressure: 0.2 Pa)
(B) Atmospheric temperature: 650 ° C
(C) Heating time: 3 minutes The second annealing step was performed under the following conditions.

(A) Atmospheric gas: N ₂ gas (flow rate: 5 L / min, pressure: 0.2 Pa)
(B) Atmospheric temperature: 650 ° C
(C) Heating time: 10 minutes Further, as Comparative product 1, the same process up to the formation of the original film by sputtering was performed, and the annealing was carried out once instead of the two-step annealing. The conditions in that case are shown below.

(A) Atmospheric gas: O ₂ gas (flow rate: 20 L / min pressure: 0.2 Pa)
(B) Atmospheric temperature: 650 ° C
(C) Heating time: 13 minutes The results are shown in FIG. As can be seen from the graph shown in FIG. 4, the light absorptance at a wavelength of 455 nm was 0.09% for the inventive product, but 0.24% for the comparative product 1, an improvement of about 63%.

(Example 2)
In the present Example 2, the light absorptance of the transparent conductive film 13 of the invention 1 in Example 1 and the atmosphere temperature of each of the first annealing step and the second annealing step set to 630 ° C. (Invention 2). The dispersion of was measured. Further, as comparative product 2, the same process up to the formation of the original film by sputtering was performed, and the annealing condition was set to one annealing instead of the two-step annealing. However, the ambient temperature is 600 ° C.

  As can be seen from FIG. 5, the light absorption rate of the invention product 2 of the two-stage annealing with the ambient temperature of 630 ° C. is lower than that of the comparison product 2 of the one-step annealing. In addition, it can be seen that the variation in Invention 1 with an atmospheric temperature of 650 ° C. was suppressed more than Invention Product 2 with an atmospheric temperature of 630 ° C. during annealing.

  In the present invention, a transparent conductive film having a low light absorption rate can be stably formed, so that high quality can be ensured. Therefore, a semiconductor layer including a light emitting layer is laminated on a substrate, and light from the light emitting layer is reflected toward the substrate. It is suitable for the manufacturing method of the light emitting element provided with the reflective part to perform.

DESCRIPTION OF SYMBOLS 11 Translucent board | substrate 12 Semiconductor layer 13 Transparent conductive film 14 Reflection part 15 N electrode 16 P electrode 121 N type semiconductor layer 122 Light emitting layer 123 P type semiconductor layer 141 Low refractive index dielectric film 141a First low refractive index dielectric film 141b Second low refractive index dielectric film 142 Adhesive dielectric film 143 Reflective conductive film B Mounting substrate K Bump

Claims (5)

A film having a light-transmitting property, a semiconductor layer in which an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are stacked on the substrate, and a film-forming material that is stacked on the semiconductor layer and made of a metal oxide. A method of manufacturing a light emitting device comprising: the transparent conductive film formed; and a reflective portion laminated on the transparent conductive film,
A sputtering step of targeting the film-forming material made of the metal oxide and forming the transparent conductive film on the semiconductor layer by sputtering with an oxygen-free atmosphere gas;
A first annealing step of annealing the original film with an oxygen-containing atmosphere gas;
A second annealing step of annealing with an oxygen-free atmosphere gas after the first annealing step,
A method for manufacturing a light-emitting element, wherein an atmosphere temperature of one or both of the first annealing step and the second annealing step is higher than 600 ° C. 2. The method for manufacturing a light-emitting element according to claim 1, wherein the atmosphere temperature of one or both of the first annealing step and the second annealing step is higher than 630 ° C. 3. The method for manufacturing a light-emitting element according to claim 1, wherein the transparent conductive film is formed using a metal oxide containing In, Sn, Ga, and Al or a metal oxide containing In, Zn, Ga, and Al. The method of manufacturing a light emitting element according to claim 3, wherein the transparent conductive film is formed of ITO. The manufacturing method of the light emitting element of any one of Claim 1 to 4 which forms the said transparent conductive film into 10 nm or more.

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