CN103594595B - There is the luminaire of modified electrode structure - Google Patents
There is the luminaire of modified electrode structure Download PDFInfo
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- CN103594595B CN103594595B CN201310573094.7A CN201310573094A CN103594595B CN 103594595 B CN103594595 B CN 103594595B CN 201310573094 A CN201310573094 A CN 201310573094A CN 103594595 B CN103594595 B CN 103594595B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 238000007873 sieving Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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Abstract
The present invention relates to the luminaire with modified electrode structure, described equipment includes: the first semiconductor layer and the second semiconductor layer；Luminescent layer between described first semiconductor layer and described second semiconductor layer；It is positioned at the first electrode pattern layer on described first semiconductor layer；And it is positioned at the second electrode pattern layer on described second semiconductor layer, wherein, described second electrode pattern layer includes electrode body and the multiple branch electrodes extended from described electrode body to described first electrode pattern layer.Modified electrode structure in the luminaire with modified electrode structure of embodiment of the present invention offer can increase the luminous efficiency of luminaire together with relatively thin including transparent conducting oxide layer.
Description
The divisional application of to be JIUYUE in 2009 2 days, denomination of invention be " luminaire with modified electrode structure " patent application 200910167299.9 that the application is the applying date.
Technical field
The present invention relates to luminaire, more particularly, it relates to have the luminaire of modified electrode structure.The various settings of electrode structure can increase light extraction (lightextraction) together with relatively thin including transparent conducting oxide layer and reduce the running voltage of luminaire.
Background technology
Convert electrical current into the light emitting diode (LED) of light, be one of most important solid luminous device now.LED generally includes the luminescent layer between p type semiconductor layer and n type semiconductor layer.Electric current will be driven to be applied to the P type electric contact being electrically connected to p type semiconductor layer, and apply it to be electrically connected to the N-type electric contact of n type semiconductor layer.Therefore, hole (hole) and electronics are discharged to luminescent layer by p type semiconductor layer and n type semiconductor layer respectively.Hole and electronics combine in luminescent layer, thus luminous.Sending light from luminescent layer in all directions, then light leaves the surface of LED.
The size and the light-emitting area that increase LED are one of methods improving LED luminous efficiency and luminous intensity.But, for the conventional LED based on nitride, because electric current can not begin at from electric contact, whole luminescent layer spreads equably, so the increase of size can be restricted.Such as, because P type has relatively low conductivity based on the semiconductor layer of nitride, so the diffusion being applied to the electric current of P type electric contact can be limited to the specific region being positioned at the P type below P type electric contact based on the semiconductor layer of nitride.Electric current can not in whole P type based on laterally (laterally) diffusion on the semiconductor layer of nitride.Additionally, can generate heat in the particular portion office of LED so that the assembly material around electric contact deteriorates more quickly.For N-type based on for the semiconductor layer of nitride, although it has a better conductivity, but for electric current on this layer laterally diffusion yet suffer from some obstacle.Along with the increase of LED device size, electric current can not begin at N-type from electric contact and spread equably based on the semiconductor layer of nitride.Therefore, the conventional size based on the LED of nitride is subject to electric current in P type is based on the semiconductor layer of nitride and in the N-type restriction based on the horizontal proliferation in the semiconductor layer of nitride.
Summary of the invention
In one aspect of the invention, this luminaire includes the first semiconductor layer and the second semiconductor layer, luminescent layer, the first electrode pattern layer being positioned on described first semiconductor layer between described first semiconductor layer and described second semiconductor layer and is positioned at the second electrode pattern layer on described second semiconductor layer, wherein, described second electrode pattern layer includes electrode body and the multiple branch electrodes extended from described electrode body to described first electrode pattern layer.
In a still further aspect thereof, this luminaire includes the first semiconductor layer and the second semiconductor layer, luminescent layer between described first semiconductor layer and the second semiconductor layer, it is positioned at the first electrode pattern layer on described first semiconductor layer and is positioned at the second electrode pattern layer on described second semiconductor layer, wherein, described first electrode pattern layer and described second electrode pattern layer are provided so that there is uneven distance along the length of described first electrode pattern layer and described second electrode pattern layer between described first electrode pattern layer and described second electrode pattern layer.
Modified electrode structure in the luminaire with modified electrode structure of embodiment of the present invention offer can increase the luminous efficiency of luminaire together with relatively thin including transparent conducting oxide layer.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the schematic perspective view illustrating the luminaire with modified electrode structure；
Fig. 2 is the schematic plan of the luminaire illustrating Fig. 1；
Fig. 2 A is the sectional view of the part structure of the luminaire of the line I-I intercepting being showing along Fig. 2；
Fig. 2 B is the schematic plan of the relation between the part structure of the P type sub-electrode pattern in the region a of part structure and the Fig. 2 illustrating N-type sub-electrode pattern；
Fig. 2 C illustrates the schematic plan of a replacing structure of structure shown in Fig. 2 B；
Fig. 2 D illustrates the schematic plan of another replacing structure of structure shown in Fig. 2 B；
Fig. 2 E illustrates the schematic plan of another replacing structure of structure shown in Fig. 2 B；
Fig. 2 F illustrates the schematic plan of another replacing structure of structure shown in Fig. 2 B；
Fig. 3 be corresponding with Fig. 2 A, illustrate luminaire the second embodiment part structure sectional view；
Fig. 4 be corresponding with Fig. 2 B, the schematic plan of the second embodiment of luminaire is shown；
Fig. 5 is the schematic plan of the 3rd embodiment illustrating luminaire；And
Fig. 6 is the schematic plan of the 4th embodiment illustrating luminaire.
Detailed description of the invention
It is described more fully below the present invention, shown in the drawings of various aspects of the invention referring to accompanying drawing.But, according to the multi-form present invention that realizes, and can should not be construed as limited to the various aspects of the invention given by the disclosure.On the contrary, it is provided that these aspects are so that the disclosure is fully and completely, and pass on the scope of the present invention to those skilled in the art fully.Various aspects of the invention shown in accompanying drawing are likely to be not drawn necessarily to scale.Additionally, for sake of simplicity, simplify some accompanying drawings.Therefore, accompanying drawing is likely not to have each assemblies whole describing given device (such as, equipment) or method.
Here, describing various aspects of the invention with reference to the accompanying drawings, accompanying drawing is the indicative icon of the desired configuration of the present invention.So, for instance as manufacturing technology and/or tolerance as a result, it is possible to expect the change of shape of these diagrams.Therefore, element shown and described herein is should not be construed as being limited to (such as in the various aspects of the invention given by the disclosure, region, layer, partly, substrate, spherical form etc.) concrete shape, but should include such as due to the form variations that causes of manufacture.Exemplarily, illustrate as rectangle or the element that describes can have circular or curved feature and/or have the concentration of gradual change at its edge, rather than from an element to the Discrete Change of another element.Therefore, the element shown in accompanying drawing is actually schematically, and their shape is not intended to the accurate shape of element is described and is not intended to restriction the scope of the present invention.
It is understood that when be expressed as element (such as region, layer, partly, substrate etc.) being positioned at another element " on " time, it can be located immediately on this another element, or also can there is intermediary element.On the contrary, when element being expressed as " directly on another element ", then intermediary element it is absent from.Furthermore, it will be appreciated that when element is expressed as on another element " formation ", it can grow on this another element or intermediary element, deposits, etches, is attached, connects, couple or preparation or assembling otherwise.
(such as " below " or " bottom " and " above " or " top ") here can be used for the relation describing an element with another element additionally, relative terms, as shown in FIG..It is understood that except the direction described in figure, this relative terms also aims to comprise other direction of device.Exemplarily, if the device upset in figure, then it is described as being located at the element on other element " below " side and will be oriented " above " side being positioned at this other element.Therefore, term " below " can comprise both " below " and " above ", depends on the concrete direction of device.Similarly, if the device upset in figure, then it is described as being located at " under other element " or is positioned at the element of " under other element " and will be oriented and be positioned at this " on other element ".Therefore, with term " ... under " or " ... under " can comprise " and ... on " and " ... under " both.
Unless otherwise defined, otherwise whole term (including scientific and technical terminology) used herein has the identical meanings being generally understood that with those skilled in the art.Furthermore, it will be appreciated that term (such as defined in normally used dictionary) should be interpreted as having the implication consistent with its implication in the context of association area and the present invention.
As used herein, unless other expression clearly made in context, otherwise singulative " ", " one " and " described " are intended to include equally plural form.It is additionally appreciated that, when using in this manual, term " includes (comprises) " and/or represents " comprising (comprising) " existence of described feature, entirety, step, operation, element and/or assembly, but it is not excluded that the existence of one or more further feature, entirety, step, operation, element, assembly and/or its combination or interpolation.Term "and/or" includes arbitrarily and all combining of one or more listed continuous item.
To provide the various aspects of the luminaire with modified electrode structure now.But, skilled addressee readily understands that, these aspects extend to other light source, without departing from the present invention.Modified electrode structure can be used to form luminaire, and this modified electrode structure comprises P-type electrode patterned layer and the specific configuration of N-type electrode patterned layer, wherein, there is very uneven distance between the two layers.By utilizing these structures of electrode structure and relatively thin including transparent conducting oxide layer as current-diffusion layer, this luminaire can allow less running voltage and obtain better light extraction.
Fig. 1 is the schematic perspective view of the luminaire of the electrode structure with improvement, and Fig. 2 is the schematic plan of the luminaire illustrating Fig. 1.Fig. 2 A is the sectional view of the part structure along the line I-I of Fig. 2 luminaire intercepted.With reference to three above accompanying drawing, luminaire includes substrate 10, n type semiconductor layer 11, luminescent layer 12, p type semiconductor layer 13, the thickness including transparent conducting oxide layer 14 less than 1000 angstroms, N-type electrode patterned layer 15 and P-type electrode patterned layer 16.N type semiconductor layer 11 is formed over the substrate 10.Luminescent layer 12 is formed on n type semiconductor layer 11.P type semiconductor layer 13 is formed on luminescent layer 12.The thickness transparent semiconductive oxide layer 14 less than 1000 angstroms is formed on p type semiconductor layer 13.Including transparent conducting oxide layer 14(is preferably ITO(InSnOx) layer) as current-diffusion layer.
N-type electrode patterned layer 15 includes a pair N-type sub-electrode pattern 15a and 15b of mirror image relationship.In the first embodiment, N-type sub-electrode pattern 15a is the C shape sub-electrode main body elongated and deform, and N-type sub-electrode pattern 15b is the contrary sub-electrode main body of C shape elongated and deform.By etching including transparent conducting oxide layer 14, p type semiconductor layer 13 and luminescent layer 12 successively, may pass through including transparent conducting oxide layer 14, p type semiconductor layer 13 and luminescent layer 12 and form raceway groove 18a and the 18b of the profile being respectively provided with N-type sub-electrode pattern 15a and 15b, the part surface of remaining n type semiconductor layer 11.Then, the part exposed surface of n type semiconductor layer 11 forms N-type sub-electrode pattern 15a and 15b respectively in raceway groove 18a and 18b so that between N-type sub-electrode pattern 15a, 15b and n type semiconductor layer 11, form electrical contact.It is respectively kept with certain space, to prevent from being formed electrical contact between N-type sub-electrode pattern 15a, 15b and including transparent conducting oxide layer 14, p type semiconductor layer 13, luminescent layer 12 between N-type sub-electrode pattern 15a, 15b and raceway groove 18a, 18b.
P-type electrode patterned layer 16 includes a pair P type sub-electrode pattern 16a and the 16b formed on including transparent conducting oxide layer 14 with mirror image relationship.P type sub-electrode pattern 16a includes P type sub-electrode main body 160a and multiple P type branch (branched) electrode 162a.P type sub-electrode main body 160a stretches out along the profile of N-type sub-electrode pattern 15a from the semiclosed opening of N-type sub-electrode pattern 15a, to surround it so that the structure of P type sub-electrode main body 160a and N-type sub-electrode main body is mutually matched.P type branch electrodes 162a is formed along each position of the length of P type sub-electrode main body 160a, and extends to N-type sub-electrode pattern 15a.Because the tectonic sieving of P type branch electrodes 162a, so can there is different distances from them in the various piece at P type sub-electrode pattern 16a place between the appropriate section at N-type sub-electrode pattern 15a place.In short, by being formed in each position of P type sub-electrode pattern 16a to the N-type sub-electrode pattern 15a multiple P type branch electrodes 162a extended, there is very uneven distance between P type sub-electrode pattern 16a and N-type sub-electrode pattern 15a.
Equally, P type sub-electrode pattern 16b includes P type sub-electrode main body 160b and multiple P type branch electrodes 162b.P type sub-electrode main body 160b stretches out along the profile of N-type sub-electrode pattern 15b from the semiclosed opening of N-type sub-electrode pattern 15b, to surround it.P type branch electrodes 162b is formed along each position of the length of P type sub-electrode main body 160b, and extends to N-type sub-electrode pattern 15b.Because the tectonic sieving of P type branch electrodes 162b, so will there is different distances from them in the various piece at P type sub-electrode pattern 16b place between the appropriate section at N-type sub-electrode pattern 15b place.In other words, between P type sub-electrode pattern 16b and N-type sub-electrode pattern 15b, there is very uneven distance.
By utilizing the specific configuration (this structure obtains distance very uneven between the two patterned layer) of N-type electrode patterned layer 15 and P-type electrode patterned layer 16, and use relatively thin including transparent conducting oxide layer 14(such as to form the ITO layer (being preferably the ITO layer with 600 angstroms of thickness) less than 1000 angstroms of the thickness below P-type electrode patterned layer 16), luminaire can realize better light extraction and allow less running voltage.It is to say, the electrode structure improved can increase the luminous efficiency of luminaire together with relatively thin including transparent conducting oxide layer.
In the first embodiment, N-type electrode patterned layer 15 and P-type electrode patterned layer 16 are made preferably of metal, to increase conductivity, and it is highly preferred that be made up of the reflectance reflecting metal more than 60%, for instance aluminum or silver.
In order to realize distance very uneven between N-type electrode patterned layer 15 and P-type electrode patterned layer 16, P type sub-electrode main body 160a, 160b and P type branch electrodes 162a thereon, the 162b of P type sub-electrode pattern 16a, 16b can have various tectonic sieving.Fig. 2 B is the schematic plan of the relation between the part structure of the P type sub-electrode pattern 16b in the region a of part structure and the Fig. 2 illustrating N-type sub-electrode pattern 15b.P type sub-electrode main body 160b and P type branch electrodes 162b in Fig. 2 B illustrate pectinate structure, and wherein each P type branch electrodes 162b forms straight line.Each in P type sub-electrode main body 16a, 16b with N-type sub-electrode pattern 15a, 15b in each electrode width w less than 30 μm (such as, 5-10 μm).The electrode rugosity of each N-type electrode patterned layer 15 and each P-type electrode patterned layer 16 is t, and wherein, such as, t can be 4 μm to t > 10/w().Distance l between P type sub-electrode main body 160b and N-type sub-electrode pattern 15b1Can be about 125 μm, and the distance between P type branch electrodes 162b and N-type sub-electrode pattern 15b is l2, wherein, 0 < l2<l1/ 2.In the present embodiment, the distance l between P type branch electrodes 162b and N-type sub-electrode pattern 15b2May range from 0 < l2< 62.5 μm.Distance d between every couple of P type branch electrodes 162b1It is smaller than l1Twice (such as, about 110 μm).
In the example shown in Fig. 2 B, constant length is existed for each P type branch electrodes 162b, but, this length also changes with between them.Fig. 2 C to Fig. 2 F illustrates replacement electrode structure, it should be noted that the replacement electrode structure falling into the scope of the invention is not limited to this.Fig. 2 C illustrates that each P type branch electrodes 162b has T-shape.In figure 2d, P type sub-electrode main body 160b and P type branch electrodes 162b illustrates herringbone structure, and wherein each P type branch electrodes 162b forms the straight line of inclination.Preferably, the angle formed between P type sub-electrode main body 106b and P type branch electrodes is between 45 ° and 135 °.Fig. 2 E illustrates that each P type branch electrodes can have curve (curvilinear) shape of similar P type branch electrodes 162b or composite curve (multiple-curvilinear) shape of similar P type branch electrodes 162b '.In fig. 2f, P type sub-electrode main body 160b and P type branch electrodes 162b illustrates guardrail (guardrail) columnar structure.P type branch electrodes 162b is connected by the P type public electrode 163 being positioned at the end relative with P type sub-electrode main body 160b.Electrode size in Fig. 2 B is equally applicable to Fig. 2 C to 2F.It should be noted that, the various electrode structures that Fig. 2 A to 2F provides are only non-limiting examples, and other electrode structure is also contained in the scope of the present invention.For the actual configuration of the P type branch electrodes of any concrete application can have by straight line portion and/or curved portion form variously-shaped.Those skilled in the art easily can determine suitable electrode structure for any concrete application based on teachings herein.
Alternatively, can be formed have and P-type electrode patterned layer 16 same shape but cover larger area dielectric layer.Dielectric layer can be formed between including transparent conducting oxide layer 14 and p type semiconductor layer 13, to prevent electric current to be downwardly towards luminescent layer 12 from P-type electrode patterned layer 16, and prevent the light sent from luminescent layer 12 from being absorbed by P-type electrode patterned layer 16 further.In other words, can at the current barrier layer formed below of P-type electrode patterned layer 16, in order to prevent the light that luminaire sends from partly being absorbed by P-type electrode patterned layer 16.Fig. 3 be corresponding with Fig. 2 A, illustrate luminaire the second embodiment part structure sectional view.The only difference is that between the first embodiment and the second embodiment, is formed with dielectric layer 17 in the second embodiment.Dielectric layer 17 can be formed, just in the lower section of P-type electrode patterned layer 16 position between including transparent conducting oxide layer 14 and p type semiconductor layer 13.Except dielectric layer 17, all components in the second embodiment and identical in the first embodiment.
The various structures (that is, P type sub-electrode main body 160a, 160b and P type branch electrodes 162a thereon, 162b, as shown in Fig. 2 B to 2F) of P type sub-electrode pattern 16a and 16b are equally applicable to the second embodiment.Fig. 4 illustrates the schematic plan (turning also now to Fig. 2 B) of relation between the part structure of N-type sub-electrode pattern 15b in the second embodiment and the part structure of P type sub-electrode pattern 16b.The dielectric layer 17 of the second embodiment includes the antithetical phrase dielectric layer forming the lower section at P type sub-electrode pattern 16a, 16b between including transparent conducting oxide layer 14 and p type semiconductor layer 13.As shown in Figure 4, each sub-dielectric layer has the shape identical with corresponding P type sub-electrode pattern, but covers bigger region.In this second embodiment, dielectric layer 17 is used as the current barrier layer of luminaire, and it prevents the light that luminaire sends from partly being absorbed by P-type electrode patterned layer 16.
In the 3rd embodiment of luminaire, N-type sub-electrode pattern 15 is also designed to have multiple branch electrodes.Fig. 5 is the schematic plan of the 3rd embodiment illustrating luminaire.3rd embodiment and the first embodiment (referring to Fig. 2) are distinctive in that, the N-type electrode patterned layer 15 in the 3rd embodiment is also designed to have multiple branch electrodes.Specifically, the P-type electrode patterned layer 16 in the 3rd embodiment is identical with the first embodiment structure.But, the N-type sub-electrode pattern 15a of the N-type electrode patterned layer 15 in the 3rd embodiment includes N-type sub-electrode main body 150a and includes being formed along each position of the length of N-type sub-electrode main body 150a and the multiple N-type branch electrodes 152a extended to relative P type sub-electrode pattern 16a.N-type branch electrodes 152a and P type branch electrodes 162a illustrates alternate staggered (interdigitated) relation of rule.It is to say, a N-type branch electrodes 152a and one P type branch electrodes 162a one after the other.But, hi an alternative embodiment, N-type branch electrodes 152a and P type branch electrodes 162a illustrates irregular alternate interspersed relation (not shown), wherein, and N-type branch electrodes 152a and one or more P type branch electrodes 162a one after the other.In the third embodiment, raceway groove 18a and 18b is respectively provided with the profile of N-type sub-electrode pattern 15a and 15b, but between these raceway groove and patterns, leave certain space, to prevent from being formed between N-type sub-electrode pattern 15a, 15b and including transparent conducting oxide layer 14, p type semiconductor layer 13, luminescent layer 12 electrical contact.Other assembly in 3rd embodiment and identical in the first embodiment.Alternatively, the dielectric layer 17 of the second embodiment can provide the current barrier layer as P-type electrode patterned layer 16.Dielectric layer 17 in the present embodiment has the position identical with the second embodiment and shape, therefore, is not repeated here description.
Fig. 6 is the schematic plan of the 4th embodiment illustrating luminaire.4th embodiment and the first embodiment (referring to Fig. 2) are distinctive in that, in the 4th embodiment, P-type electrode patterned layer 16 does not have any branch electrodes, and N-type electrode patterned layer 15 has the shape identical with the 3rd embodiment (referring to Fig. 5).N-type sub-electrode pattern 15a and 15b is formed multiple N-type branch electrodes 152a and 152b respectively.Because the electrode structure of N-type electrode patterned layer 15, so can there is very uneven distance between P-type electrode patterned layer 16 and N-type electrode patterned layer 15.Additionally, the various structures (as shown in Fig. 2 B to 2F) of P type sub-electrode main body 160b and P type branch electrodes 162b thereon are equally applicable to N-type sub-electrode pattern 15a and the 15b in the 4th embodiment.Other assembly in 4th embodiment and identical in the first embodiment.Alternatively, the dielectric layer 17 of the second embodiment can be provided to luminaire, as the current barrier layer of P-type electrode patterned layer 16.Dielectric layer 17 in present embodiment has the position identical with the second embodiment and shape, therefore, is not repeated here description.
Luminaire can be selected from the group being made up of light emitting diode, luminous hetero-junctions (heterojunction), luminescent quantum trap and other Light radiation emitting solid state equipment.This luminaire can use any suitable material system, for instance II-VI and III-V material system (such as, III nitride, III phosphide and III arsenide material system).
Provide various aspects of the invention, so that those of ordinary skill in the art are capable of the present invention.To those skilled in the art, to the various amendments of the various aspects provided in the present invention be it will be evident that and principle disclosed herein extend to other light source, and unrelated with shape, application or design constraint.Therefore, claim is not limited to various aspects of the invention, and is in compliance with the full breadth consistent with the language of claim.Known or meeting later be clearly hereby incorporated by whole structures and the function equivalent of the element of the various aspects in disclosure description that skilled addressee will appreciate that, and is intended to by encompassed.And, here without being openly intended to be exclusively used in the public, no matter whether the disclosure is enunciated in the claims.
Claims (22)
1. a luminaire, including:
First semiconductor layer；
Second semiconductor layer；
Form the luminescent layer between described first semiconductor layer and described second semiconductor layer；
Form the first electrode pattern layer on described first semiconductor layer, described first electrode pattern layer includes two the first sub-electrode patterns, said two the first sub-electrode pattern is mechanically separated from each other and is formed mirror image relationship, each described first sub-electrode pattern has the C shape that curve elongates, and the C shape that described curve elongates has semi-enclosed opening；And
Form the second electrode pattern layer on described second semiconductor layer, described second electrode pattern layer includes the second sub-electrode pattern of the relation that is mirrored into a pair, each described second sub-electrode pattern includes straight line portion and the curved portion extended from described straight line portion, described curved portion has the C shape that curve elongates, the C shape that described curve elongates has semi-enclosed opening, each in described second sub-electrode pattern is corresponding to each in described first sub-electrode pattern, and each in described second sub-electrode pattern is stretched out along the profile of corresponding described first sub-electrode pattern from described semi-enclosed opening of corresponding described first sub-electrode pattern, to surround corresponding described first sub-electrode pattern,
The straight line portion of another the second sub-electrode pattern in the straight line portion of a second sub-electrode pattern in wherein said second sub-electrode pattern and described second sub-electrode pattern extends in the same direction, and the curved portion of described second sub-electrode pattern extends towards respective end with being mirrored into relation in the way of being located remotely from each other.
2. luminaire according to claim 1, wherein, described first semiconductor layer includes n type semiconductor layer, and described first electrode pattern layer includes N-type electrode pattern, and wherein, described second semiconductor layer includes p type semiconductor layer, and described second electrode pattern layer includes P-type electrode pattern.
3. luminaire according to claim 1, wherein, described first semiconductor layer includes p type semiconductor layer, and described first electrode pattern layer includes P-type electrode pattern, and wherein, described second semiconductor layer includes n type semiconductor layer, and described second electrode pattern layer includes N-type electrode pattern.
4. luminaire according to claim 1, also includes the including transparent conducting oxide layer being arranged on a semiconductor layer of described first semiconductor layer and described second semiconductor layer.
5. luminaire according to claim 4, wherein, described first semiconductor layer and the one semiconductor layer in described second semiconductor layer include p type semiconductor layer.
6. luminaire according to claim 4, also include the dielectric layer between the one semiconductor layer in described including transparent conducting oxide layer and described first semiconductor layer and described second semiconductor layer, described dielectric layer has the shape of the electrode pattern on the one semiconductor layer being arranged in described first semiconductor layer and described second semiconductor layer, but covers the region bigger than the electrode pattern layer on the one semiconductor layer in described first semiconductor layer and described second semiconductor layer.
7. luminaire according to claim 6, wherein, one semiconductor layer in described first semiconductor layer and described second semiconductor layer includes p type semiconductor layer, and wherein, the described electrode pattern layer on the one semiconductor layer in described first semiconductor layer and described second semiconductor layer includes P-type electrode patterned layer.
8. luminaire according to claim 4, wherein, described including transparent conducting oxide layer includes ITO layer.
9. luminaire according to claim 1, also include substrate, wherein, a semiconductor layer in described first semiconductor layer and described second semiconductor layer is positioned on described substrate, and described first semiconductor layer and the one semiconductor layer in described second semiconductor layer include n type semiconductor layer.
10. luminaire according to claim 1, wherein, described first electrode pattern layer and described second electrode pattern layer include metal.
11. luminaire according to claim 10, wherein, the reflectance of described metal is more than 60%.
12. luminaire according to claim 10, wherein, described metal includes aluminum or silver.
13. luminaire according to claim 1, wherein, described second sub-electrode pattern is mechanically separated.
14. a luminaire, including:
First semiconductor layer；
Second semiconductor layer；
Form the luminescent layer between described first semiconductor layer and described second semiconductor layer；
Form the first electrode pattern layer on described first semiconductor layer；And
Form the second electrode pattern layer on described second semiconductor layer,
Wherein, described first electrode pattern layer includes forming the first electrode body on described first semiconductor layer, and described first electrode body has the C shape of elongation, and the C shape of described elongation has semi-enclosed opening,
Described second electrode pattern layer includes the second sub-electrode pattern of the relation that is mirrored into a pair, each in described second sub-electrode pattern includes forming the second electrode body on described second semiconductor layer and multiple branch electrodes, described second electrode body stretches out along the profile of described first electrode body from described semi-enclosed opening of described first electrode body, to surround described first electrode body, the structure making described first electrode body and described second electrode body is mutually matched, the plurality of branch electrodes extends from described second electrode body to described first electrode body, and
Described second electrode body includes straight line portion and the curved portion extended from described straight line portion, the straight line portion of another the second sub-electrode pattern in the straight line portion of a second sub-electrode pattern in described second sub-electrode pattern and described second sub-electrode pattern extends in the same direction, and the curved portion of described second sub-electrode pattern extends towards respective end with being mirrored into relation in the way of being located remotely from each other.
15. luminaire according to claim 14, wherein, the structure of described second electrode body and the plurality of branch electrodes is pectinate structure, and wherein, the plurality of branch electrodes forms straight line.
16. luminaire according to claim 14, wherein, the structure of described second electrode body and the plurality of branch electrodes is herringbone structure, and wherein, the plurality of branch electrodes forms the angled straight lines that inclination angle is at 45 degree to 135 degree.
17. luminaire according to claim 14, wherein, the structure of described second electrode body and the plurality of branch electrodes is guardrail columnar structure, and wherein, the plurality of branch electrodes connects by being positioned at the public electrode of the end relative with described second electrode body.
18. luminaire according to claim 14, wherein, from the group that following shape forms, select the shape of each described branch electrodes: T-shape, curve shape, compound curve shape and the shape being made up of straight line portion and curved portion.
19. luminaire according to claim 14, wherein, described first electrode body includes multiple branch electrodes, the plurality of branch electrodes of described first electrode body is formed with uneven interval along the length of the electrode body of described first electrode pattern layer, and the plurality of branch electrodes of described first electrode body extends to described second electrode body, and wherein, the plurality of branch electrodes of described first electrode pattern layer and described second electrode pattern layer has alternate false relation.
20. luminaire according to claim 14, the first distance between the end of a branch electrodes in wherein said multiple branch electrodes and described first electrode body is less than the half of described first electrode body Yu the spacing of described second electrode body.
21. a luminaire, including:
First semiconductor layer；
Second semiconductor layer；
Form the luminescent layer between described first semiconductor layer and described second semiconductor layer；
Forming the first electrode pattern layer on described first semiconductor layer, described first electrode pattern layer has the C shape of elongation, and the C shape of described elongation has semi-enclosed opening；And
Form the second electrode pattern layer on described second semiconductor layer, described second electrode pattern layer is stretched out along the profile of described first electrode pattern layer from described semi-enclosed opening of described first electrode pattern layer, to surround described first electrode pattern layer, the structure making described first electrode pattern layer and described second electrode pattern layer is mutually matched
Wherein, each electrode pattern layer in described first electrode pattern layer and described second electrode pattern layer all includes the relation that is mirrored into and mechanically separated a pair sub-electrode pattern, wherein, the first sub-electrode pattern in the sub-electrode pattern of described second electrode pattern layer includes the first electrode body and multiple first branch electrodes, the plurality of first branch electrodes from described first electrode body to the sub-electrode pattern of described first electrode pattern layer first sub-electrode pattern extend, and wherein, the second sub-electrode pattern in the sub-electrode pattern of described second electrode pattern layer includes the second electrode body and multiple second branch electrodes, the plurality of second branch electrodes from described second electrode body to the sub-electrode pattern of described first electrode pattern layer second sub-electrode pattern extend, and
Each in described first electrode body and described second electrode body includes straight line portion and the curved portion extended from described straight line portion, the straight line portion of described first electrode body and described second electrode body extends in the same direction, and the curved portion of described first electrode body and described second electrode body extends towards respective end with being mirrored into relation in the way of being located remotely from each other.
22. luminaire according to claim 21, the pair of sub-electrode pattern of wherein said first electrode pattern layer is mechanically separated.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/472,809 | 2009-05-27 | ||
| US12/472,809 US8637891B2 (en) | 2008-09-09 | 2009-05-27 | Light-emitting device with improved electrode structures |
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| CN2009101672999A Division CN101901857B (en) | 2008-09-09 | 2009-09-02 | Light-emitting device with improved electrode structures |
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| JP3675003B2 (en) * | 1995-10-27 | 2005-07-27 | 昭和電工株式会社 | Semiconductor light emitting device |
| US6614056B1 (en) * | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
| JP2002319704A (en) * | 2001-04-23 | 2002-10-31 | Matsushita Electric Works Ltd | Led chip |
| US6650018B1 (en) * | 2002-05-24 | 2003-11-18 | Axt, Inc. | High power, high luminous flux light emitting diode and method of making same |
| US7408202B2 (en) * | 2005-04-04 | 2008-08-05 | Infocus Corporation | Solid state device with current spreading segments |
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