CN102790157A - Luminous element - Google Patents
Luminous element Download PDFInfo
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- CN102790157A CN102790157A CN2012102985865A CN201210298586A CN102790157A CN 102790157 A CN102790157 A CN 102790157A CN 2012102985865 A CN2012102985865 A CN 2012102985865A CN 201210298586 A CN201210298586 A CN 201210298586A CN 102790157 A CN102790157 A CN 102790157A
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Abstract
The invention discloses a luminous element which comprises a luminous laminated layer and a second electrode pad. The second electrode pad is positioned on the luminous laminated layer, can be connected with at least two wires and comprises a first lead area and a second lead area partly overlapped with the first lead area.
Description
Present specification the dividing an application that be the denomination of invention submitted on November 28th, 2007 for No. 200710196122.2 application for a patent for invention of " light-emitting component ".
Technical field
The present invention relates to a kind of light-emitting component, refer in particular to a kind of light-emitting diode with electric current dispersive electrode.
Background technology
The principle of luminosity of light-emitting diode (LED) and structure and conventional light source and inequality have that volume is little, the reliability advantages of higher, and the application on market is rather extensive.For example, optical display, laser diode, traffic signals sign, data memory device, communication device, lighting device and medical treatment device etc.
Please with reference to Figure 1A, 1B, Figure 1A illustrate is the structure vertical view of known iii-nitride light emitting devices 1, and Figure 1B illustrate is the known iii-nitride light emitting devices 1 of Figure 1A section of structure along the A-A hatching.The structure of this known iii-nitride light emitting devices 1 comprises substrate 11, n type nitride layer 12, luminescent layer 13, p type nitride layer 14, p type euphotic electrode 15, n type electrode 16, with the function and the p type electronic pads 17 of electronic pads.Electronic pads is as the structure that receives extraneous electric current input, when electric current after p type electronic pads 17 imports, mat p type euphotic electrode 15 improves effect that electric currents disperse so that electric current evenly distributes, and makes electronics and hole inspire photon in luminescent layer 13 combinations again.But shown in Figure 1B, the light-emitting zone of known iii-nitride light emitting devices focuses mostly in the place of p type euphotic electrode 15 near n type electrode 16, causes luminous efficiency not good in fact.And,, and reduce the life-span of known luminescence diode 1 more because the concentration effect of electric current makes temperatures at localized regions raise.Though known technology can to improve the effect that electric current disperses, make the absorptance of p type euphotic electrode 15 improve light transmittance thereby reduction through further improving the thickness of p type euphotic electrode 15.In order to address the above problem, in U.S. Pat 6,307, in No. 218 contents, disclose like the light-emitting diode 2 structure vertical views that Fig. 2 illustrated, in addition in U.S. Pat 6,614, in No. 056, also disclosure is like light-emitting diode 3 structure vertical views that Fig. 3 illustrated.In Fig. 2, light-emitting diode 2 has p type electrode and n type electrode, and p type electrode comprises p type electronic pads 24, by outward extending two the first arm shape electrode 24a of electronic pads, and is sandwiched in the second arm shape electrode 24b between two the first arm shape electrodes.Arm shape electrode can reduce the absorptance of p type electrode, and scatter through arm shape electrode after electric current is imported via p type electronic pads 24 again.N type electrode comprises n type electronic pads 25, the 3rd arm shape electrode 25a, and the 4th arm shape electrode 25b.By the electric current that p type electrode injects, behind the luminous zone via light-emitting diode, derive by n type electrode again.P type arm shape electrode 24a, 24b and n type arm shape electrode 25a, 25 arrangements interlaced with each other.
With reference to figure 3, light-emitting diode 3 comprises n type electrode, has first electronic pads (contact) 35 and the n type finger electrode 36 that are positioned at light-emitting diode 3 first sides and is connected with first electronic pads 35; And p type electrode, have second electronic pads 37 and two finger electrode 38a, 38b that are connected with second electronic pads 37 of being positioned at light-emitting diode 3 second sides, wherein second side and first side opposition.Moreover n type finger electrode 36 extends from first side direction, second side, and p type finger electrode 38a, 38b extend from second side direction, first side, and n type finger electrode 36 and p type finger electrode 38a, 38b arrangement interlaced with each other.In light- emitting component 2,3, p type electrode and n type electrode disperse inequality, the problem that luminous efficiency is not good through the electric current that the staggered mode of its extension electrode solves known iii-nitride light emitting devices 1.
In addition with reference to figure 4; In U.S. Pat 6; Disclose light-emitting diode 4 in 518, No. 598, in epitaxial structure of light-emitting diode, form spiral groove; Form on the epitaxial structure of groove and non-groove surface again and have two kinds of p type metal electrode 41 and n type metal electrodes 42 that difference is electrical, and the p type electronic pads 43, the n type electronic pads 44 that join with p type metal electrode 41 and n type metal electrode 42.Wherein p type electrode and n type electrode also become the distribution of parallel spiral structure, and the electric current that can solve known iii-nitride light emitting devices 1 disperses inequality, the problem that luminous efficiency is not good.
In above-mentioned traditional various light emitting diode constructions; Absorb the light that produces by light-emitting diode for fear of the electrode that is positioned at exiting surface; The design mostly its electrode design is euphotic electrode or sees through various as arm shape, finger-like or spiral electrode reduces the area of electrode, with the increase lighting area.General electrode width can be less than the width of electronic pads, to avoid the electrode gross area excessive, to reduce electrode shading area.
Summary of the invention
In one embodiment, a kind of light-emitting component is provided, comprises substrate; Luminous lamination is positioned on the substrate, comprise ground floor, the second layer and be sandwiched in ground floor and the second layer between semiconductor light emitting layer; Groove, this groove pass the second layer, luminescent layer to ground floor, expose the part surface of ground floor; First conductive structure is arranged in the exposed surface of groove ground floor; And second conductive structure, be positioned on the second layer; Wherein, first conductive structure comprises first electrode and first electronic pads, and first electrode is electrically connected with this first electronic pads; Second conductive structure comprises second electrode and second electronic pads, and second electrode is electrically connected with second electronic pads; Wherein in first electronic pads and second electronic pads area of at least one between 1.5 * 10
4μ m
2To 6.2 * 10
4μ m
2Between.
In one embodiment, above-mentioned ground floor comprises first conductive-type semiconductor layer, and this second layer comprises second conductive-type semiconductor layer.
In one embodiment, in above-mentioned first electronic pads and second electronic pads area of at least one between 1.5 * 10
4μ m
2To 3 * 10
4μ m
2Between.
In one embodiment, the first above-mentioned electronic pads area is between 1.5 * 10
4μ m
2To 6.2 * 10
4μ m
2Between, first electronic pads comprises first lead district and second lead district, and first lead and second lead are connected with first lead district and second lead district respectively.
In one embodiment, the area of the second above-mentioned electronic pads is between 1.5 * 10
4μ m
2To 6.2 * 10
4μ m
2Between, second electronic pads comprises the 3rd lead district and the 4th lead district; Privates and privates are connected with the 3rd lead district and the 4th lead district respectively.
In one embodiment, above-mentioned ground floor comprises the conduction of current layer, between conduction of current layer and luminescent layer, also comprises semiconductor layer.
In one embodiment, also comprise tack coat between above-mentioned conduction of current layer and the substrate.
In one embodiment, above-mentioned conduction of current layer comprise be selected from tin indium oxide, cadmium tin, zinc oxide, and constituent material group of zinc-tin oxide institute at least a material.
In one embodiment, above-mentioned tack coat is insulation adhesive layer or conduction tack coat.
In one embodiment, above-mentioned insulation adhesive layer comprises and is selected from spin-coating glass, silicones, epoxy resin (Epoxy), polyimides (PI), benzocyclobutene (BCB), reached at least a material in the constituent material group of fluorine cyclobutane (PFCB) institute.
In one embodiment; Above-mentioned conduction tack coat comprises but is not limited to metal material or its alloys such as silver, gold, aluminium, indium, tin; Or be spontaneous conducting polymer, or the electric conducting material that doping metals material such as aluminium, gold, platinum, zinc, silver, nickel, germanium, indium, tin, titanium, lead, copper, palladium or its alloy are formed in the macromolecule.
In one embodiment, above-mentioned tack coat up and down wherein a side also comprise the reflector.
In one embodiment, in above-mentioned first electronic pads and second electronic pads area of at least one between 1.5 * 10
4μ m
2To 3 * 10
4μ m
2Between.
In one embodiment, above-mentioned electronic pads area occupied is between 3 * 10
4μ m
2To 1.24 * 10
5μ m
2Between.
In one embodiment, at least one is the line stretcher structure distribution that does not diverge with continuously in above-mentioned first electrode and second electrode.
In one embodiment, the above-mentioned line stretcher structure that does not diverge continuously is to comprise at least a structure that is selected from curve and straight line.
In one embodiment, the above-mentioned line stretcher structure that does not diverge continuously comprises helicoidal structure.
In one embodiment, the first above-mentioned electrode and at least one electrode of second electrode are linearities, and extend to opposite side on self-emission device first limit.
In one embodiment, the first above-mentioned electrode and at least one electrode of second electrode comprise M bar linearity electrode, M >=2, and the horizontal expansion electrode connects this M bar linearity electrode.
In one embodiment, extend to the second relative limit on the above-mentioned first electrode self-emission device, first limit; Extend to the first relative limit on the second electrode self-emission device, second limit.
In one embodiment, an electrode of the first above-mentioned electrode or second electrode comprises M bar linearity electrode, and another of M >=2, the first electrodes or second electrode comprises M-1 bar linearity electrode.
In one embodiment, above-mentioned first electronic pads or the second electronic pads non-end points place that is positioned at the line stretcher structure.
In one embodiment, above-mentioned substrate comprises and is selected from sapphire, GaN, AlN, SiC, GaAs, GaP, Si, ZnO, MgO, MgAl
2O
4, at least a material in glass, metal and the constituent material group of composite base plate institute.
In one embodiment, the live width of the first above-mentioned electrode is less than or equal to 25 μ m approximately.
In one embodiment, the live width of the second above-mentioned electrode is less than or equal to 25 μ m approximately.
In one embodiment, the live width of the first above-mentioned electrode is less than or equal to 10 μ m approximately.
In one embodiment, the live width of the second above-mentioned electrode is less than or equal to 10 μ m approximately.
In one embodiment, a kind of light-source generation device is provided, comprises: the light source of forming by the light-emitting component of above-mentioned each embodiment; Power system, supply light source one electric current; And control element, in order to Control current.
In one embodiment, a kind of backlight source device is provided, comprises: above-mentioned light-source generation device; And optical element.
Description of drawings
Figure 1A-1B is a sketch map, shows known light-emitting diode;
Fig. 2 is a sketch map, shows known light-emitting diode;
Fig. 3 is a sketch map, shows known light-emitting diode;
Fig. 4 is a sketch map, shows known light-emitting diode;
Fig. 5 A-5C is a sketch map, shows the light-emitting component according to first embodiment of the invention;
Fig. 6 A-6B is a sketch map, shows the light-emitting component according to second embodiment of the invention;
Fig. 7 is a sketch map, shows the light-emitting component according to third embodiment of the invention;
Fig. 8 A-8B is a sketch map, shows the light-emitting component according to fourth embodiment of the invention;
Fig. 9 is a sketch map, shows the light-source generation device of the light-emitting component composition that utilizes the embodiment of the invention;
Figure 10 is a sketch map, shows the backlight module of the light-emitting component composition that utilizes the embodiment of the invention.
Description of reference numerals
10,20,30: light-emitting component 100,200: substrate
110: resilient coating 120,220: the first semiconductor layers
130,230: luminescent layer 140,240: the second semiconductor layers
151,251,351A, 351B: first electrode
152,252,352A, 352B: second electrode
161,261,361A, 361B: first electronic pads
162,262,362: the second electronic padses
161A, 161B, 162A, 162B, 261A, 261B, 262A, 361A, 361B, 362A, 362B: lead district
170,270,370: groove 180A, 180B: gold bullion
171A, 171B: lead 210: tack coat
280,380: conduction of current layer 90: light-source generation device
910: light source 920: power system
930: control element 100: backlight module
1010: optical element
Embodiment
Fig. 5 A is the structure vertical view that illustrates the light-emitting component 10 of first embodiment, and Fig. 5 B illustrates the profile of the structure of light-emitting component 10 along BB ' line segment.Light-emitting component 10, light-emitting diode (LED) for example comprises: substrate 100, resilient coating 110, first semiconductor layer 120, luminescent layer 130, second semiconductor layer 140, first, second electrode 151 and 152 and first, second electronic pads 161 and 162.In the present embodiment, light-emitting component 10 is the cube of rectangle, and each length of side is 610 μ m, and front face area is about 3.72 * 10
5μ m
2, its corresponding luminescent layer has area identical with it.Light-emitting component 10 each epitaxial loayer are to utilize for example metal-organic chemical vapor deposition equipment (Metal Organic Chemical Vapor Deposition; MOCVD) or molecular beam epitaxy (Molecular-Beam Epitaxy; MBE) etc. method forms epitaxial structure on substrate 100, and this epitaxial structure is resilient coating 110, first semiconductor layer 120, luminescent layer 130 and second semiconductor layer 140 in regular turn.
After treating that epitaxial structure is accomplished; Carry out etching step again, in epitaxial structure, form groove 170, and in groove 170, expose the part surface of first semiconductor layer 120; Its further groove 170 is the square helical form, and not etched epitaxial structure also forms the epitaxial structure of tool square spiral shape equally.
Then, in groove 170, form first electrode 151 and first electronic pads 161 on the exposed surface of first semiconductor layer 120, because groove is the square helical form, therefore first electrode 151 is the square spiral shape too, and live width d is about 22 μ m.The position of first electronic pads 161 can be positioned on the line of two-end-point or non-end points of first electrode 151; In the present embodiment; First electronic pads 161 is positioned at the non-end points place of first electrode 151; Because light-emitting component 10 has bigger luminescent layer area, therefore need bigger operating current, just can make luminescent layer reach higher luminous efficiency.In order to reach bigger electric current input variable, more electric current input point need be provided.In the present embodiment, first electronic pads 161 is designed to hold at least two areas that are used for accepting the lead (wire) of extraneous electric current input, makes light-emitting component have the lead of sufficient amount to supply extraneous electric current input, to improve luminous efficiency.In the present embodiment, the area of first electronic pads is 1.9 * 10
4μ m
2
Then on the epitaxial structure that remains, form second electrode 152 and second electronic pads 162, wherein, second electrode, 152 live widths are about 20 μ m, the spiral helicine structure that is square, and be connected with second electronic pads 162.Second electronic pads 162 can be positioned on the line of two-end-point or non-end points of second electrode 152.In the present embodiment, second electronic pads 162 is positioned at the non-end points place of second electrode 152.Likewise,, in the present embodiment, also second electronic pads 162 is designed to hold the area of at least two leads, makes light-emitting component can supply extraneous electric current input, to improve luminous efficiency through enough leads in order to reach bigger electric current input variable.In the present embodiment, the area of second electronic pads is 1.73 * 10
4μ m
2
That the shape of above-mentioned first electronic pads 161 and second electronic pads 162 can be is square, circular or other arbitrary shapes, and comprises lead district, can be positioned at the arbitrary part on the electrode.In the present embodiment; The shape of first electronic pads 161 and second electronic pads 162 is respectively the overlapping shape of two circular portions; The 161A and the 161B two district's lead district that comprise first electronic pads; And the 162A of second electronic pads and 162B two district's lead district, so can make in the follow-up lead-in wire operation has discriminating function preferably, and the situation of avoiding two leads to beat on same electronic pads takes place.On the lead district 161A on each electronic pads, 161B, 162A and 162B, there is lead to be electrically connected respectively, makes light-emitting component to obtain enough electric currents, emit beam after the generation electron hole combines in luminescent layer through each lead with each lead district.With reference to figure 5C, be an electronic pads profile, the lead district 161A of show electrode pad 161 and 161B go up and form gold bullion 180A, 180B, in the lead-in wire process, make the gold bullion melting through heating up, and lead 171A and 171B are engaged with gold bullion again.In kind form two leads respectively in same lead district 162A and 162B two districts at second electronic pads 162.
Above-mentioned helical form can be clockwise or counterclockwise, and the number of turns of spiral and unrestricted.Substrate 100 can be sapphire (Sapphire) substrate; The material of resilient coating 110 can be made up of aluminium nitride (AlN), aluminium gallium nitride alloy (AlGN) or gallium nitride (GaN); First semiconductor layer 120 can be by aluminum indium gallium nitride ((Al
xGa
1-x)
yIn
1-yN; 0≤x≤1; 0≤y≤1) constitutes; The material of luminescent layer 130 can be by nitrogen gallium aluminium indium ((Al
pGa
1-p)
qIn
1-qN; 0≤p≤1; 0≤q≤1) the two heterogeneous or quantum well structures of material constitute; Second semiconductor layer 140 can be by aluminum indium gallium nitride ((Al
aGa
1-a)
bIn
1-bN; 0≤a≤1; 0≤b≤1) constitutes.
The material of above-mentioned first electrode 151 system is selected from the material that can form ohmic contact with first semiconductor layer, for example is made up of the single or multiple lift metal structure of titanium (Ti), aluminium (Al), gold (Au) or its alloy or metal conductive oxide layer; First electronic pads 161 can be made up of single or multiple lift metal structure or its alloy of titanium, aluminium or gold; The material of second electrode 152 system is selected from the material that can form ohmic contact with second semiconductor layer, for example is made up of the single or multiple lift metal of nickeliferous (Ni), gold or its alloy or other conducting metal oxides; Second electronic pads 162 can be made up of nickeliferous, golden single or multiple lift metal or its alloy.
The area of above-mentioned first electronic pads 161 and second electronic pads 162 does not need to satisfy simultaneously the condition of the area that holds at least two leads, can be that one of them the satisfied area condition that can hold two leads of first electronic pads or second electronic pads gets final product.
Fig. 6 A is the vertical view that illustrates the light-emitting component 20 of second embodiment, and Fig. 6 B illustrates the profile of the structure of light-emitting component 20 along CC ' line segment.Light-emitting component 20 structures comprise: substrate 200; Tack coat 210; Conduction of current layer 280; First semiconductor layer 220; Luminescent layer 230; Second semiconductor layer 240; First, second electrode 251 and 252; And first, second electronic pads 261 and 262.In the present embodiment, light-emitting component 20 is the cube of rectangle, and each length of side is 787 μ m, and front face area is about 6.19 * 10
5μ m
2, its corresponding luminescent layer can have area identical with it.Light-emitting component 20 each epitaxial loayer are to go up at growth substrate (not illustrating) to form epitaxial structure.After epitaxial structure is grown up, on first semiconductor layer 220, form conduction of current layer 280 again with high conduction of current, can the electric current that self-electrode injects be spread out.Then, through tack coat 210 epitaxial structure and substrate 200 are bonded together again.
After accomplishing engagement step, carry out etching step again, and in groove 270, expose the part surface of conduction of current layer 280 with formation groove 270 in epitaxial structure.Its further groove 270 is a finger-like, the first side direction opposite side of self-emission device, that is the extension of second side of light-emitting component, and wherein not etched epitaxial structure also forms the epitaxial structure of finger-like equally.
Then; In groove 270, form first electrode 251 and first electronic pads 261 on the exposed surface of conduction of current layer 280; Because groove is a finger-like; Therefore first electrode 251 is finger-like too, comprises at least three linearity extension electrodes and horizontal expansion electrode and connects these three linearity extension electrodes.First electrode, 251 live widths are about 23 μ m.The position of first electronic pads 261 can be positioned on the line of two-end-point or non-end points of first electrode 251, and in the present embodiment, first electronic pads 261 is first electrode, the 251 non-end points places that are positioned near light-emitting component first side.Likewise,, in the present embodiment, first electronic pads 261 is designed to hold the area of at least two leads, makes light-emitting component have enough leads to supply extraneous electric current input in order to improve luminous efficiency.In the present embodiment, the area of this first electronic pads is 2.15 * 10
4μ m
2
Then on the epitaxial structure that remains, form second electrode 252 and second electronic pads 262; Wherein, Second electrode 252 comprises second side direction, first side of three linearity extension electrode self-emission devices and extends, and staggered with 251 3 finger-like extension electrodes of first electrode; And the horizontal expansion electrode connects these three linearity extension electrodes.Second electrode, 252 live widths are about 20 μ m.Second electronic pads 262 is positioned at second side of light-emitting component, and is connected with second electrode 252.In the present embodiment, the area of second electronic pads is 1.27 * 10
4μ m
2
In present embodiment; The shape of first electronic pads 261 is divided into rectangle; The big I of the area of first electronic pads comprises 261A and 261B two district's lead district of first electronic pads; Can hold at least one lead on lead district 261A and the 261B respectively and be electrically connected mutually with each lead district, so will make has discriminating function preferably in the follow-up lead-in wire operation, and the situation of avoiding two leads to beat on same electronic pads takes place.The shape of second electronic pads 262 then is circular, and only leaded district 262A, lead district 262A can connect lead and form electrical connection.The area of second electronic pads also can be designed to hold the area of at least two leads, and for example area is greater than 1.5 * 10
4μ m
2
The material of above-mentioned growth substrate can be sapphire, SiC, GaN, GaAs or GaP; The material of substrate 200 comprises Si, AlN, ZnO, GaAs, glass, sapphire, metal, composite material or other materials similar.Tack coat 210 can be conduction tack coat or insulation adhesive layer; Its material of conduction tack coat comprises but is not limited to metal material and alloys thereof such as silver, gold, aluminium, indium, tin; Or be spontaneous conducting polymer, or the electric conducting material that doping metals material such as aluminium, gold, platinum, zinc, silver, nickel, germanium, indium, tin, titanium, lead, copper, palladium or its alloy are formed in the macromolecule.Its material of insulation adhesive layer comprises but is not limited to spin-coating glass, silicones, benzocyclobutene (BCB), epoxy resin (Epoxy), pi (Polyimide) or crosses fluorine cyclobutane (PFCB).When tack coat 210 was the insulation adhesive layer, the material of substrate 200 was also unrestricted.Be to select the material of Si as substrate 200 in the present embodiment, Si has higher heat and passes coefficient, can be effectively with the thermal diffusion of light-emitting component generation to environment.Tack coat 210 up and down wherein a side also comprise reflector (not illustrating), the material in reflector comprises the combination of metal, oxide or metal and oxide.Oxide material comprises AlO
x, SiO
xOr SiN
x
When tack coat is conduction during tack coat, the material of substrate 200 can be selected insulating material, for example glass, sapphire or AlN, or form insulating barrier about in the of 210 and between conduction of current layer 280 or the substrate in tack coat.The 3rd embodiment that Fig. 7 illustrates lies on the tack coat 210 and forms insulating barrier 690 between the conduction of current layer 280, and with isolated electric current, the material of insulating barrier 690 can be SiN
xOr SiO
2Above-mentioned first semiconductor layer 220 is by aluminum indium gallium nitride ((Al
mGa
1-m)
rIn
1-rN; 0≤m≤1; 0≤r≤1) or AlGaInP ((Al
cGa
1-c)
dIn
1-dP; 0≤c≤1; 0≤d≤1) constitutes; The material system of luminescent layer 230 can be by nitrogen gallium aluminium indium ((Al
eGa
1-e)
fIn
1-fN; 0≤e≤1; 0≤f≤1) or AlGaInP ((Al
iGa
1-i)
jIn
1-jP; 0≤i≤1; 0≤j≤1) the two heterogeneous or quantum well structures of material constitute; Second semiconductor layer 240 is by aluminum indium gallium nitride ((Al
kGa
1-k)
hIn
1-hN; 0≤k≤1; 0≤h≤1) or AlGaInP ((Al
sGa
1-s)
tIn
1-tP; 0≤s≤1; 0≤t≤1) constitutes.
The material of first electrode 251 can be made up of single or multiple lift metal or its alloy or other conducting metal oxides of nickeliferous (Ni), gold; First electronic pads 261 can be made up of nickeliferous, golden single or multiple lift metal or its alloy; Second electrode 252 can be made up of the single or multiple lift metal structure of titanium (Ti), aluminium (Al), gold (Au) or its alloy or metal conductive oxide layer; Second electronic pads 262 can be made up of single or multiple lift metal structure or its alloy of titanium, aluminium or gold; Above-mentioned first electrode 251 and second electrode, 252 shapes can comprise M bar finger-like extension electrode, wherein M >=1 respectively; Above-mentioned first electrode 251 also can comprise M bar finger-like extension electrode, and wherein M >=1, and second electrode 252 can comprise M-1 bar finger-like extension electrode.
Fig. 8 A is the structure vertical view that illustrates the light-emitting component 30 of the 4th embodiment, and Fig. 8 B illustrates the profile of the structure of light-emitting component 30 along DD ' line segment.The structure of light-emitting component 30 is similar with light-emitting component 10, comprises: substrate 100, resilient coating 110, first semiconductor layer 120, luminescent layer 130, and second semiconductor layer 140.After epitaxial structure is accomplished, on second semiconductor layer 140, form conduction of current layer 380.In the present embodiment, light-emitting component 30 is the cube of rectangle, and each length of side is 1143 μ m, and front face area is 1.31 * 10
6μ m
2, its corresponding luminescent layer has area identical with it.
After the conduction of current layer is accomplished; Carry out etching step again; In conduction of current layer and epitaxial structure, form groove 370; And in groove 370, expose the part surface of first semiconductor layer 120, and wherein this groove 370 is the double helix shape, not etched conduction of current layer and epitaxial structure also form the structure of tool double helix shape equally.
With reference to figure 8A, light-emitting component 30 comprises the double helix first electrode 351A and 351B and double helix second electrode 352A and the 352B; One group of first electronic pads 361A and the 361B and second electronic pads 362.After groove 370 forms, in groove 370, form the first electrode 351A and the 351B and first electronic pads 361A and the 361B on the exposed surface of first semiconductor layer 120.Because groove 370 comprises one group of helical form, first electrode 351 comprises one group of helical form too.First electrode, 351 live widths are about 10 μ m.The position of the first electronic pads 361A, 361B lays respectively on the line of two-end-point or non-end points of first electrode 351.In the present embodiment, the first electronic pads 361A and 361B lay respectively at first limit of the first electrode 351A and the contiguous light-emitting component 30 of 351B and the non-end points place that locates with respect to second limit on first limit.Moreover the area of the first electronic pads 361A and 361B is all 8.65 * 10
3μ m
2
Then on the conduction of current layer 380 that remains, form the second electrode 352A, 352B and second electronic pads 362, wherein, the second electrode 352A, 352B are respectively spiral structures, and are connected with second electronic pads 362 simultaneously.The second electrode 352A, 352B live width are about 10 μ m.Second electronic pads 362 is positioned at and light-emitting component 30 first limits and the 3rd adjacent limit of the second limit common phase, and links to each other with the second electrode 352A, 352B simultaneously.In order to reach bigger electric current input variable, in the present embodiment, also second electronic pads 362 is designed to hold the area of at least two leads, make the lead of sufficient amount supply extraneous electric current input.In the present embodiment, the area of second electronic pads 362 is 1.9 * 10
4μ m
2
In present embodiment; The shape of second electronic pads 362 is respectively the overlapping shape of two circular portions; Comprise 362A and 362B two district's lead district of second electronic pads, so can make in the follow-up lead-in wire operation has discriminating function preferably, and the situation of avoiding two leads to beat on same electronic pads takes place.Lead district 361A on each electronic pads, 361B, 362A, and 362B can distinguish external wire and form and be electrically connected, make light-emitting component to obtain enough electric currents through each lead, produce and emit beam after the electron hole combines in luminescent layer.The structure of aforesaid each electrode, electronic pads can be applicable in the light-emitting component of aforementioned each embodiment; The shape of aforesaid light-emitting component comprises square or rectangular; Aforesaid conduction of current layer 280,380 comprise be selected from tin indium oxide, cadmium tin, zinc oxide, and constituent material group of zinc-tin oxide institute at least a material; Each surface of aforesaid each light-emitting component can form coarse surface through extension or etching method; The face formation alligatoring that for example forms around alligatoring, the epitaxial loayer around the substrate or contact with electrode below the formation alligatoring of front exiting surface or each electrode is to improve light extraction efficiency.
Fig. 9 shows the light-source generation device generalized section, comprises the light-emitting component among the arbitrary embodiment of the present invention.Light-source generation device 90 can be a lighting device, for example street lamp, car light or room lighting light source; It also can be the back light of backlight module in traffic signals sign or the flat-panel screens.Light-source generation device 90 comprises light source 910, power system 920 and the control element 930 with aforementioned light emitting device group one-tenth, in order to control power system 920.
Figure 10 shows the backlight module generalized section, and backlight module 100 comprises the light-source generation device 90 in the previous embodiment, and optical element 1010.Optical element 1010 can make it meet the demand condition backlight of flat-panel screens with in the light place that is sent by light-source generation device 90.Optical element 1010 comprises but is not limited to the element of photonic crystal lattice (photonic lattice), filter (color filter), wavelength conversion layer (wavelength conversion layer), anti-reflecting layer (antireflective layer), lens or its combination.
Cited each embodiment of the present invention in order to explanation the present invention, is not in order to limit scope of the present invention only.Anyone was to the present invention did any showing and be prone to the modification of knowing or change neither disengaging spirit of the present invention and scope.
Claims (10)
1. light-emitting component comprises:
Luminous lamination; And
Second electronic pads is positioned on this luminous lamination, and can be connected with at least two leads, comprises:
First lead district; And
Second lead district is overlapped with this first lead district.
2. light-emitting component as claimed in claim 1 also comprises at least two second electrodes, is connected to this first lead district and this second lead district respectively.
3. light-emitting component as claimed in claim 1 also comprises at least one group first electronic pads.
4. light-emitting component as claimed in claim 3 also comprises at least two first electrodes, is connected to this respectively and organizes first electronic pads.
5. light-emitting component as claimed in claim 4, wherein, this first electronic pads is positioned on the two ends of this first electrode or on the non-end points.
6. light-emitting component as claimed in claim 4, wherein, this first electrode is a helical form.
7. light-emitting component as claimed in claim 3, wherein, this is organized, and first electronic pads lays respectively at first limit of this light-emitting component and with respect to second limit on this first limit, this second electronic pads is positioned at the 3rd adjacent limit of this first limit and this second limit with light-emitting component.
8. light-emitting component as claimed in claim 1, wherein, the area of this second electronic pads is between 1.5 * 10
4μ m
2To 6.2 * 10
4μ m
2Between.
9. light-emitting component as claimed in claim 1, wherein, this second electronic pads comprises two partly overlapping circles.
10. light-emitting component as claimed in claim 1, wherein, this luminous lamination comprises helical groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210298586.5A CN102790157B (en) | 2007-11-28 | 2007-11-28 | Luminous element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210298586.5A CN102790157B (en) | 2007-11-28 | 2007-11-28 | Luminous element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710196122A Division CN101452981B (en) | 2007-11-28 | 2007-11-28 | Light emitting element |
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| Publication Number | Publication Date |
|---|---|
| CN102790157A true CN102790157A (en) | 2012-11-21 |
| CN102790157B CN102790157B (en) | 2015-04-29 |
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|---|---|
| CN (1) | CN102790157B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742418A (en) * | 2016-03-18 | 2016-07-06 | 华灿光电股份有限公司 | Light-emitting diode chip and preparation method thereof |
| CN108630718A (en) * | 2017-03-21 | 2018-10-09 | 晶元光电股份有限公司 | Light emitting element |
-
2007
- 2007-11-28 CN CN201210298586.5A patent/CN102790157B/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742418A (en) * | 2016-03-18 | 2016-07-06 | 华灿光电股份有限公司 | Light-emitting diode chip and preparation method thereof |
| CN108630718A (en) * | 2017-03-21 | 2018-10-09 | 晶元光电股份有限公司 | Light emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102790157B (en) | 2015-04-29 |
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