CN103594575A - Double-laminated-layer electrode light-emitting device - Google Patents

Double-laminated-layer electrode light-emitting device Download PDF

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CN103594575A
CN103594575A CN201310499328.8A CN201310499328A CN103594575A CN 103594575 A CN103594575 A CN 103594575A CN 201310499328 A CN201310499328 A CN 201310499328A CN 103594575 A CN103594575 A CN 103594575A
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layer
electrode
alloy
lamination
luminescent device
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CN201310499328.8A
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CN103594575B (en
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丛国芳
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Liyang Technology Development Center
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LIYANG DONGDA TECHNOLOGY TRANSFER CENTER Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Abstract

The invention discloses a double-laminated-layer electrode light-emitting device which is characterized by being provided with a sapphire substrate. A low-temperature buffer layer, an n-type doping layer, a multi-quantum-well layer, a p-type doping layer and a laminated p electrode are sequentially arranged on the sapphire substrate, wherein the n-type doping layer is of a step structure, a laminated n electrode is arranged on the step structure, and the laminated p electrode and the laminated n electrode are of the same structure.

Description

A kind of luminescent device of dual stack electrode
Technical field
The invention belongs to technical field of semiconductor luminescence, particularly relate to a kind of luminescent device with the high brightness of dual stack electrode.
Background technology
Light emitting semiconductor device application is increasingly extensive, particularly aspect illumination, has the trend that replaces incandescent lamp and fluorescent lamp, but also faces at present some technical problems, and particularly light taking-up efficiency is lower.This has caused the defects such as luminance shortage of luminescent device.
Conventional light emitting semiconductor device (for example LED) comprises that order is formed on semiconductor layer luminescence unit in Sapphire Substrate and the contact electrode on semiconductor light emitting unit.Generally speaking, contact electrode generally adopts single-layer metal material, and by single-layer metal material, contact with semiconductor and form ohmic contact, thus the electrode of formation luminescent device.But the ohm contact performance of the contact electrode that this single-layer metal material forms is also not fully up to expectations.Can be conventionally significantly different each other because semi-conductive surface can and be used to form the surface of the metal material (as Ag) of contact electrode.Difference due to surface energy, at During Annealing, between contact electrode and semiconductor, can there is coalescent effect, thereby the interface between semiconductor and contact electrode has formed a plurality of cavities, the existence in this cavity has reduced the reflectivity of contact electrode, and the light output performance of light emitting semiconductor device is reduced.
Summary of the invention
In order to overcome the defect existing in prior art, the invention provides a kind of high brightness luminescent device with dual stack electrode, by quantum-well materials, replace the structure changing, strengthened the restriction to electronics and hole, simultaneously stacking by adopting different materials to carry out, thus form laminated construction, contact electrode by this laminated construction as light emitting semiconductor device, to suppress coalescent effect, avoid empty generation, further strengthen the performance of ohmic contact.
The dual stack electrode light-emitting device that the present invention proposes has Sapphire Substrate; In Sapphire Substrate, there is successively low temperature buffer layer, N-shaped doped layer, multiple quantum well layer, p-type doped layer, lamination p electrode; Wherein N-shaped doped layer has ledge structure, has lamination n electrode on ledge structure.
Wherein, N-shaped doped layer is by Al 0.05in 0.05ga 0.9n forms, and p-type doped layer is by Al 0.1in 0.05ga 0.85n forms; Multiple quantum well layer is n-Al 0.045in 0.055ga 0.9n layer and n-AI 0.045in 0.055ga 0.9the periodic structure that P layer alternately forms, with one deck n-Al 0.045in 0.055ga 0.9n layer and one deck n-AI 0.045in 0.055ga 0.9p, as one-period, forms 20-30 cycle altogether; Lamination p electrode and lamination n electrode have identical structure, and it comprises: reflector, barrier layer, coalescent inhibition layer and oxidation screen.
Wherein, reflector is three-decker, is followed successively by from bottom to top: TiO 2layer, Ti 3o 5layer and Ta 2o 5layer, this reflector is mapped to its surperficial light for being reflected into;
Barrier layer is formed by the transparent material conducting electricity, and the transparent material of described conduction is selected from least one material in TiN, RuO, InO, MoO and IrO; Barrier layer, for the coalescent effect on blocking reflected layer surface, prevents empty generation;
Coalescent inhibition layer is double-decker, and lower floor consists of metallic aluminium (Al), and upper strata consists of acieral, and wherein, acieral is Al-Ag alloy, Al-Cu alloy, Al-Pd alloy, Al-Rh alloy, Al-Ni alloy, Al-Ru alloy or Al-Pt alloy; For suppressing contact electrode at During Annealing, there is coalescent effect and produce cavity in coalescent inhibition layer;
Oxidation screen is selected from one or both in Au, Ni, Pd, Cu, Rh, Ru or Pt; Oxidation screen is used for preventing that coalescent inhibition layer surface is oxidized, and can also be as the sealer of laminate electrode.
The beneficial effect of the laminate electrode on luminescent device of the present invention is:
1. adopt the n-Al of the periodic structure alternately forming 0.045in 0.055ga 0.9n layer and n-AI 0.045in 0.055ga 0.9p layer forms multiple quantum well layer, can strengthen the restriction to electronics and hole, effectively improves the luminous efficiency of luminescent device;
2. adopt laminate electrode as the top electrode of luminescent device, can avoid, in laminate electrode, coalescent effect occurs, avoid empty generation, thereby improve the light output characteristic of luminescent device, and the ohm contact performance between intensifier electrode and semi-conducting material.
Accompanying drawing explanation
Fig. 1 is the cross section structure schematic diagram of the luminescent device that proposes of the present invention.
Fig. 2 is the structural representation of the laminate electrode of the luminescent device that proposes of the present invention.
Embodiment
Referring to Fig. 1, the dual stack electrode light-emitting device that the present invention proposes has Sapphire Substrate 11; In Sapphire Substrate 11, there is successively low temperature buffer layer 12, N-shaped doped layer 13, multiple quantum well layer 14, p-type doped layer 15, lamination p electrode 20; Wherein N-shaped doped layer 13 has ledge structure, has lamination n electrode 30 on ledge structure.
Wherein, N-shaped doped layer 13 is by Al 0.05in 0.05ga 0.9n forms, and p-type doped layer 15 is by Al 0.1in 0.05ga 0.85n forms; Multiple quantum well layer 14 is n-Al 0.045in 0.055ga 0.9n layer and n-AI 0.045in 0.055ga 0.9the periodic structure that P layer alternately forms, with one deck n-Al 0.045in 0.055ga 0.9n layer and one deck n-AI 0.045in 0.055ga 0.9p, as one-period, forms 20-30 cycle altogether, is preferably 22,25,28 cycles;
Referring to Fig. 2, lamination p electrode 20 and lamination n electrode 30 have identical structure, and it comprises: reflector 2, barrier layer 3, coalescent inhibition layer 4 and oxidation screen 5.
Wherein, reflector 2 is three-decker, is followed successively by from bottom to top: TiO 2layer 21, Ti 3o 5layer 2 and Ta 2o 5layer 3, this reflector is mapped to its surperficial light for being reflected into; TiO 2layer 21, Ti 3o 5layer 2 and Ta 2o 5the thickness of layer 3 is identical;
Barrier layer 3 is formed by the transparent material conducting electricity, and the transparent material of described conduction is selected from least one material in TiN, RuO, InO, MoO and IrO; Barrier layer 3, for the coalescent effect on blocking reflected layer 2 surface, prevents empty generation;
Coalescent inhibition layer 4 is double-decker, and lower floor is the aluminium lamination 41 consisting of metallic aluminium (Al), the acieral layer 2 that upper strata consists of acieral; For suppressing contact electrode at During Annealing, there is coalescent effect and produce cavity in coalescent inhibition layer 4; Acieral layer 2 is Al-Ag alloy, Al-Cu alloy, Al-Pd alloy, Al-Rh alloy, Al-Ni alloy, Al-Ru alloy or Al-Pt alloy, the thickness of aluminium lamination 41 is less than the thickness of acieral layer 42, in the present invention, the thickness of aluminium lamination 41 be acieral layer 42 thickness 1/2;
Oxidation screen 5 is selected from one or both in Au, Ni, Pd, Cu, Rh, Ru or Pt; Oxidation screen 5 is oxidized for preventing coalescent inhibition layer surface, and can also be as the sealer of laminate electrode.Oxidation screen 5 can be single layer structure, is now oxidized a kind of formation that screen 5 can be in Au, Ni, Pd, Cu, Rh, Ru or Pt; Oxidation screen 5 can be also double-decker, and now, two kinds that oxidation screen 5 can be in Au, Ni, Pd, Cu, Rh, Ru or Pt form.
So far the present invention has been done to detailed explanation, but the embodiment of description above the preferred embodiments of the present invention just only, it is not intended to limit the present invention.Those skilled in the art are not departing under the prerequisite of spirit of the present invention, can make any modification to the present invention, and protection scope of the present invention are limited to the appended claims.

Claims (4)

1. a dual stack electrode light-emitting device, is characterized in that: described luminescent device has Sapphire Substrate; In Sapphire Substrate, there is successively low temperature buffer layer, N-shaped doped layer, multiple quantum well layer, p-type doped layer, lamination p electrode; Wherein N-shaped doped layer has ledge structure, has lamination n electrode on ledge structure; Lamination p electrode and lamination n electrode have identical structure.
2. luminescent device as claimed in claim 1, is characterized in that:
Wherein, N-shaped doped layer is by Al 0.05in 0.05ga 0.9n forms, and p-type doped layer is by Al 0.1in 0.05ga 0.85n forms; Multiple quantum well layer is n-Al 0.045in 0.055ga 0.9n layer and n-AI 0.045in 0.055ga 0.9the periodic structure that P layer alternately forms, with one deck n-Al 0.045in 0.055ga 0.9n layer and one deck n-AI 0.045in 0.055ga 0.9p, as one-period, forms 20-30 cycle altogether.
3. luminescent device as claimed in claim 2, is characterized in that:
Described lamination p electrode and the lamination n electrode with same structure comprise: reflector, barrier layer, coalescent inhibition layer and oxidation screen;
Wherein, reflector is three-decker, is followed successively by from bottom to top: TiO 2layer, Ti 3o 5layer and Ta 2o 5layer; Barrier layer is formed by the transparent material conducting electricity, and the transparent material of described conduction is selected from least one material in TiN, RuO, InO, MoO and IrO; Coalescent inhibition layer is double-decker, and lower floor consists of metallic aluminium (Al), and upper strata consists of acieral, and wherein, acieral is Al-Ag alloy, Al-Cu alloy, Al-Pd alloy, Al-Rh alloy, Al-Ni alloy, Al-Ru alloy or Al-Pt alloy;
Oxidation screen is selected from one or both in Au, Ni, Pd, Cu, Rh, Ru or Pt.
4. luminescent device as claimed in claim 2, is characterized in that:
Multiple quantum well layer is preferably formed 22,25 or 28 cycles.
CN201310499328.8A 2013-10-22 2013-10-22 A kind of luminescent device of dual stack electrode Active CN103594575B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106410007A (en) * 2016-09-22 2017-02-15 佛山市国星半导体技术有限公司 Bilayer-electrode LED chip and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040115917A1 (en) * 1999-03-31 2004-06-17 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
CN101165928A (en) * 2006-10-18 2008-04-23 三星电机株式会社 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same
CN102157640A (en) * 2011-03-17 2011-08-17 中国科学院半导体研究所 Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) chip with p-GaN layer subjected to surface roughening
CN103165770A (en) * 2013-02-28 2013-06-19 溧阳市宏达电机有限公司 Manufacture method of high brightness light-emitting diode with step structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040115917A1 (en) * 1999-03-31 2004-06-17 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
CN101165928A (en) * 2006-10-18 2008-04-23 三星电机株式会社 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same
CN102157640A (en) * 2011-03-17 2011-08-17 中国科学院半导体研究所 Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) chip with p-GaN layer subjected to surface roughening
CN103165770A (en) * 2013-02-28 2013-06-19 溧阳市宏达电机有限公司 Manufacture method of high brightness light-emitting diode with step structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106410007A (en) * 2016-09-22 2017-02-15 佛山市国星半导体技术有限公司 Bilayer-electrode LED chip and manufacturing method thereof
CN106410007B (en) * 2016-09-22 2019-07-19 佛山市国星半导体技术有限公司 A kind of two-layer electrode LED chip and preparation method thereof

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Effective date of registration: 20170724

Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182

Patentee after: Liyang Technology Development Center

Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67

Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD.