CN103594543B - 一种光伏电池 - Google Patents
一种光伏电池 Download PDFInfo
- Publication number
- CN103594543B CN103594543B CN201310500099.7A CN201310500099A CN103594543B CN 103594543 B CN103594543 B CN 103594543B CN 201310500099 A CN201310500099 A CN 201310500099A CN 103594543 B CN103594543 B CN 103594543B
- Authority
- CN
- China
- Prior art keywords
- layer
- amorphous silicon
- thickness
- semiconductor layer
- photovoltaic cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 26
- 239000012528 membrane Substances 0.000 claims abstract description 16
- 239000002194 amorphous carbon material Substances 0.000 claims abstract description 14
- 239000002210 silicon-based material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 description 19
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000009466 transformation Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- -1 IZO Chemical compound 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种光伏电池，自下而上依次包括：基板、第一透明导电层、非晶硅薄膜层、超晶格P型半导体层、第一非晶碳薄膜层、本征非晶硅半导体层；N型非晶硅半导体层；第二非晶碳薄膜层、第二透明导电层以及电极。其中超晶格P型半导体层由非晶硅材料层与非晶碳材料层在水平方向上相互间隔形成，所述非晶硅材料层与非晶碳材料层的宽度相等，厚度相同；非晶硅薄膜层、超晶格P型半导体层、第一非晶碳薄膜层所组成的三明治结构用于提高光伏电池的电特性与产生空穴。
Description
技术领域
本发明涉及一种半导体技术领域，特别涉及一种能够增加光能带、扩展对太阳光谱波长范围的吸收与降低P型半导体层电阻的光伏电池。
背景技术
由于世界经济的快速法杖，世界各国对能源的需求日益增长，而且传统能源日渐枯竭，因此在当今世界，能源短缺已经成为世界各国必须面对的共同问题。为了解决能源危机，世界各国一直持续研发各种可行的替代能源，其中又以光伏电池最受瞩目。光伏电池能够将太阳能转换为电能，其具有使用方便、取之不尽、用之不竭、无废弃物、无污染、使用寿命长等优点。
在20世纪70年代，由美国贝尔实验室首先研制出的光伏电池逐步发展起来。随着光伏电池的发展，如今光伏电池有多种类型，典型的有单晶光伏电池、多晶光伏电池、非晶光伏电池、化合物光伏电池、染料敏化光伏电池等。
目前市场上主流的光伏电池为硅光伏电池，按材料区分，其包括1.单结晶硅；2.多结晶硅；3.非结晶硅。目前最成熟的工业生产制造技术和最大的市场占有率乃以单晶硅和非晶硅为主的光伏电池。这是因为：单晶效率最高；非晶价格最便宜，且无需封装，生产也最快；多晶的切割及下游再加工较不易，而前述两种都较易于再切割及加工。为了降低成本，现今主要以积极发展非晶硅薄膜光伏电池为主，但其效率上于实际应用中仍然过低。近来，提出了一种在导带(Conductionband)与价带(Valenceband)之间引进额外的能带的中间能带(Intermediateband)结构。理论上，如果掺杂(doping)浓度高到某种程度，即掺杂原子之间的距离接近到某种程度，掺杂原子就不能再被视为是相互独立的。掺杂原子的能阶互相耦合(Overlapping)，就会在导带与价带之间引进中间能带。中间能带的引入，可以让原本能量小于能隙的不被吸收的光子，有机会被吸收，因而增加光电流。另一方面，为了保持输出电压，一般须要采用P-i-N结构，让中间能带位于纯质(intrinsic，ilayer)区域。然而，过去并无在P层结构中制作具有超晶格的硅薄膜光伏电池。
因此，有必要提出一种具有超晶格的硅薄膜光伏电池，利用超晶格结构来提高其光波长的吸收范围，并增加光伏电池的光电转换效率。
发明内容
本发明的主要目的在于提供一种能够增加光能带、扩展对太阳光谱波长范围的吸收与降低P型半导体层电阻的光伏电池。
本发明提出的光伏电池，自下而上依次包括：基板、第一透明导电层、非晶硅薄膜层、超晶格P型半导体层、第一非晶碳薄膜层、本征非晶硅半导体层；N型非晶硅半导体层；第二非晶碳薄膜层、第二透明导电层以及电极。
其中，该第一透明导电层形成于该基板上，其用于取出电能与提升光电转换的效率。
非晶硅薄膜层形成在第一透明导电层与超晶格P型半导体层之间。其中超晶格P型半导体层由非晶硅材料层与非晶碳材料层在水平方向上相互间隔形成，所述非晶硅材料层与非晶碳材料层的宽度相等，厚度相同。在超晶格P型半导体层上形成有第一非晶碳薄膜层。非晶硅薄膜层、超晶格P型半导体层、第一非晶碳薄膜层所组成的三明治结构用于提高光伏电池的电特性与产生空穴。本征非晶硅半导体层形成于该第一非晶碳薄膜层上，用以提高光伏电池的电特性。N型非晶硅半导体层形成于本征非晶硅半导体层上，用于产生电子。第二非晶碳薄膜层形成在N型非晶硅半导体层上，用于提高光伏电池的电特性和产生电子。第二透明导电层形成在第二非晶硅薄膜层上，其用于取出电能并提高光伏电池的光电转换效率。电极形成在第二透明导电层上，其用于取出电能。
附图说明
图1为本发明提出的光伏电池的结构示意图。
具体实施方式
实施例1
本发明提出的光伏电池，自下而上依次包括：基板10、第一透明导电层11、非晶硅薄膜层12、超晶格P型半导体层（13和14）、第一非晶碳薄膜层15、本征非晶硅半导体层16；N型非晶硅半导体层17；第二非晶碳薄膜层18、第二透明导电层19以及电极20。
其中，该第一透明导电层11形成于该基板10上，其用于取出电能与提升光电转换的效率。基板10可选择硅、玻璃、或透明柔性基板。第一透明导电层11可选择铟锡氧化物(ITO)、氧化锌（ZnO)、二氧化锡（SnO2）或氧化铟锌（IZO）；第一透明导电层11的厚度为180-430nm；可采用蒸镀法、溅镀法、电镀法、淀积（CVD）等工艺来形成。
非晶硅薄膜层12形成在第一透明导电层11与超晶格P型半导体层（13和14）之间。非晶硅薄膜层12的厚度为60-120nm。
其中超晶格P型半导体层（13和14）由非晶硅材料层13与非晶碳材料层14在水平方向上相互间隔形成，所述非晶硅材料层13与非晶碳材料层14的宽度相等，厚度相同。其中，构成超晶格P型半导体层（13和14）的非晶硅材料层13与非晶碳材料层14在水平方向上分别具有三层。非晶硅材料层13和非晶碳材料层14的厚度为55-130nm。
在超晶格P型半导体层（13和14）上形成有第一非晶碳薄膜层15。非晶硅薄膜层12、超晶格P型半导体层（13和14）、第一非晶碳薄膜层15所组成的三明治结构用于提高光伏电池的电特性与产生空穴。其中，第一非晶碳薄膜层15的厚度为60-120nm。
本征非晶硅半导体16层形成于该第一非晶碳薄膜层15上，用以提高光伏电池的电特性。本征非晶硅半导体层16的厚度为420-780nm。
N型非晶硅半导体层17形成于本征非晶硅半导体层16上，用于产生电子。N型非晶硅半导体层17的厚度为500-800nm。
第二非晶碳薄膜层18形成在N型非晶硅半导体层17上，用于提高光伏电池的电特性和产生电子。第二非晶碳薄膜层18的厚度为60-120nm。
第二透明导电层19形成在第二非晶硅薄膜层上18，其用于取出电能并提高光伏电池的光电转换效率。第二透明导电层19可选择铟锡氧化物(ITO)、氧化锌（ZnO)、二氧化锡（SnO2）或氧化铟锌（IZO）；第二透明导电层19的厚度为200-400nm；可采用蒸镀法、溅镀法、电镀法、淀积（CVD）等工艺来形成。
电极20形成在第二透明导电层19上，其用于取出电能。电极20的材料可选择铟ITO、ZnO、IZO、镍、钛、钯或铝，其厚度为100-250nm。
本发明提出的光伏电池，由于具有由非晶硅薄膜层12、超晶格P型半导体层（13和14）、第一非晶碳薄膜层15所组成的三明治结构，该结构可以增加空穴的产生，所以可以提高光伏电池的光电转换效率。并且还具有第二非晶碳薄膜层19，其可以增加电子的产生，由此光伏电池的光电转换效率可进一步提升。
优选实施例
下面介绍本发明的优选实施例，在该优选实施例中，光伏电池的结构与实施例1相同，所不同的仅有光伏电池各结构的参数选择。
其中，该第一透明导电层11选择铟锡氧化物(ITO)或氧化铟锌（IZO）；其厚度为280nm。
非晶硅薄膜层12的厚度为80nm。
构成超晶格P型半导体层（13和14）的非晶硅材料层13与非晶碳材料层14在水平方向上分别具有三层。非晶硅材料层13和非晶碳材料层14的厚度为100nm。
第一非晶碳薄膜层15的厚度为80nm。
本征非晶硅半导体层16的厚度为600nm。
N型非晶硅半导体层17的厚度为650nm。
第二非晶碳薄膜层18的厚度为90nm。
第二透明导电层19选择铟锡氧化物(ITO)或氧化铟锌（IZO）；第二透明导电层19的厚度为320nm。
电极20选择铟ITO或铝，其厚度为150nm。
至此已对本发明做了详细的说明，但前文的描述的实施例仅仅只是本发明的优选实施例，其并非用于限定本发明。本领域技术人员在不脱离本发明精神的前提下，可对本发明做任何的修改，而本发明的保护范围由所附的权利要求来限定。
Claims (2)
1.一种光伏电池，其特征在于，所述光伏电池自下而上依次包括：基板、第一透明导电层、非晶硅薄膜层、超晶格P型半导体层、第一非晶碳薄膜层、本征非晶硅半导体层、N型非晶硅半导体层、第二非晶碳薄膜层、第二透明导电层以及电极；
其中超晶格P型半导体层由非晶硅材料层与非晶碳材料层在水平方向上相互间隔形成，所述非晶硅材料层与非晶碳材料层的宽度相等，厚度相同；非晶硅薄膜层、超晶格P型半导体层、第一非晶碳薄膜层所组成的三明治结构用于提高光伏电池的电特性与产生空穴；
其中，构成超晶格P型半导体层的非晶硅材料层(13)与非晶碳材料层(14)在水平方向上分别具有三层。
2.如权利要求1所述的光伏电池，其特征在于：
其中，第一透明导电层(11)的厚度为180-430nm；
非晶硅薄膜层(12)的厚度为60-120nm；
非晶硅材料层(13)和非晶碳材料层(14)的厚度为55-130nm；
第一非晶碳薄膜层(15)的厚度为60-120nm；
本征非晶硅半导体层(16)的厚度为420-780nm；
N型非晶硅半导体层(17)的厚度为500-800nm；
第二非晶碳薄膜层(18)的厚度为60-120nm；
第二透明导电层(19)的厚度为200-400nm；
电极(20)的厚度为100-250nm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310500099.7A CN103594543B (zh) | 2013-10-22 | 2013-10-22 | 一种光伏电池 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310500099.7A CN103594543B (zh) | 2013-10-22 | 2013-10-22 | 一种光伏电池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103594543A CN103594543A (zh) | 2014-02-19 |
| CN103594543B true CN103594543B (zh) | 2016-06-08 |
Family
ID=50084610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310500099.7A Active CN103594543B (zh) | 2013-10-22 | 2013-10-22 | 一种光伏电池 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103594543B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107516691A (zh) * | 2017-07-12 | 2017-12-26 | 三峡大学 | 一种非晶碳薄膜/单晶硅异质结太阳能电池及其制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101552302A (zh) * | 2008-04-02 | 2009-10-07 | 东捷科技股份有限公司 | 一种具有超晶格p型半导体层的硅薄膜太阳能电池 |
| CN102544184A (zh) * | 2012-03-19 | 2012-07-04 | 厦门大学 | 一种横向结构的pin太阳能电池及其制备方法 |
-
2013
- 2013-10-22 CN CN201310500099.7A patent/CN103594543B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101552302A (zh) * | 2008-04-02 | 2009-10-07 | 东捷科技股份有限公司 | 一种具有超晶格p型半导体层的硅薄膜太阳能电池 |
| CN102544184A (zh) * | 2012-03-19 | 2012-07-04 | 厦门大学 | 一种横向结构的pin太阳能电池及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103594543A (zh) | 2014-02-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100555674C (zh) | 一种可调带隙三节薄膜太阳能电池及其制作方法 | |
| CN203481251U (zh) | 一种薄膜太阳能电池 | |
| CN206271715U (zh) | 一种晶体硅异质结太阳电池 | |
| CN201936901U (zh) | 薄膜太阳能电池组成结构 | |
| KR101327553B1 (ko) | 태양전지 | |
| CN101552302A (zh) | 一种具有超晶格p型半导体层的硅薄膜太阳能电池 | |
| CN106252430B (zh) | 一种晶体硅异质结太阳电池 | |
| CN103594552B (zh) | 一种光伏电池的制造方法 | |
| CN103594543B (zh) | 一种光伏电池 | |
| CN103975443B (zh) | 太阳能电池和使用其的太阳能电池模块 | |
| CN201185191Y (zh) | 一种具有多堆栈的硅基薄膜太阳能电池 | |
| CN201051505Y (zh) | 一种混合型太阳能电池 | |
| CN102544134A (zh) | 薄膜太阳能电池堆叠制造方法及其薄膜太阳能电池 | |
| CN101866969A (zh) | 太阳电池 | |
| TWI397185B (zh) | 薄膜太陽能電池及其製作方法 | |
| KR101326539B1 (ko) | Ｗｏ3 버퍼층을 포함하는 박막형 태양전지 | |
| Pattelath et al. | A Review of Photovoltaic Cell Generations and Simplified Overview of Bifacial Photovoltaic Cell Technology | |
| CN101908568A (zh) | 一种薄膜光伏太阳能电池 | |
| CN216488077U (zh) | 一种异质结太阳电池 | |
| CN113964228B (zh) | 一种异质结太阳能电池及其制备方法和应用 | |
| CN104733568A (zh) | 一种光伏电池的制造方法 | |
| CN101908569A (zh) | 一种太阳能电池 | |
| CN201708169U (zh) | 薄膜光伏太阳能电池 | |
| KR20110026257A (ko) | 박막 태양전지 | |
| CN103646973B (zh) | 一种高效薄膜光伏电池 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170724 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |
|
| TR01 | Transfer of patent right |