CN103594245A - Method for manufacturing transparent capacitor with roughened surfaces - Google Patents
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- CN103594245A CN103594245A CN201310554440.7A CN201310554440A CN103594245A CN 103594245 A CN103594245 A CN 103594245A CN 201310554440 A CN201310554440 A CN 201310554440A CN 103594245 A CN103594245 A CN 103594245A
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Abstract
The invention provides a method for manufacturing a transparent capacitor with roughened surfaces. The method for manufacturing the transparent capacitor with the roughened surfaces comprises the steps that a first transparent electrode (1) and a second transparent electrode (3) are provided, the upper surface of the first transparent electrode (1) and the lower surface of the second transparent electrode (3) are roughened so that the roughened surfaces (4) can be formed, a transparent insulating medium layer (2) is provided, the first transparent electrode (1), the transparent insulating medium layer (2) and the second transparent electrode (3) are stacked in sequence to form the transparent capacitor with the roughened surfaces (4). According to the transparent capacitor with the roughened surfaces, due to the fact that all the layers of the transparent capacitor are made of transparent materials, light transmission is good, light blocking is avoided, then the light distributivity and light transmission of a whole display panel can be improved, and then the performance of the display panel is improved. Due to the fact that a contact surface between the upper electrode and the transparent insulating medium layer of the transparent capacitor and a contact surface between the lower electrode and the transparent insulating medium layer of the transparent capacitor are the roughened surfaces, the adhesivity between the first transparent electrode and the transparent insulating medium layer of the transparent capacitor and the adhesivity between the second transparent electrode and the transparent insulating medium layer of the transparent capacitor are enhanced, and then the performance of the transparent capacitor is improved.
Description
Technical field
The present invention relates to field of semiconductor devices, particularly a kind of manufacture method of transparent electric capacity of coarse surface.
Background technology
In demonstration field, active matrix display panel field particularly, active matrix display panel comprises for driving the thin-film transistor of pixel cell, the holding capacitor that is positioned at the pixel electrode on thin-film transistor and is electrically connected to pixel electrode.Holding capacitor, for stored charge, generally includes capacitor lower electrode, electric capacity top electrode and dielectric between the two.In active matrix display panel, can utilize transparent material to make transparent film transistor, such as materials such as ZnO, can improve like this whole clearing degree of display floater, improve light and take out efficiency, and conventionally all adopt conventional material manufacture for the holding capacitor of stored charge, conventional material is opaque, therefore understand shading, thereby affect the transparency of display floater, and then affect the performance of whole display floater.And the adhesiveness between each of electric capacity of the prior art layer is poor, the phenomenon such as easily causes peeling off, come off and occur, performance that therefore can deteriorated electric capacity.
Summary of the invention
In view of this, the present invention is directed to the problem of prior art, proposed a kind of manufacture method of transparent electric capacity of coarse surface.It is applied in active matrix display panel and as holding capacitor, the bottom electrode of transparent electric capacity, top electrode and dielectric are therebetween all transparent material, permeability to light is good, not shading, thereby can improve light distributivity and the light transmission of whole display floater, and then improve the performance of display floater.And the surface that the bottom electrode of transparent electric capacity contacts with dielectric with top electrode is coarse surface, thereby strengthen the bottom electrode of transparent electric capacity and the adhesiveness between top electrode and dielectric, thereby improve the performance of transparent electric capacity.
The manufacture method of the transparent electric capacity of the coarse surface that the present invention proposes comprises:
The first transparency electrode 1 and the second transparency electrode 3 are provided;
The lower surface of the upper surface of the first transparency electrode 1 and the second transparency electrode 3 is carried out to alligatoring to form coarse surface;
Transparent insulation dielectric layer 2 is provided;
Sequential laminating the first transparency electrode 1, transparent insulation dielectric layer 2 and the second transparency electrode 3, form the transparent electric capacity with coarse surface 4.
Accompanying drawing explanation
Accompanying drawing 1 is the overall structure of the transparent electric capacity of the coarse surface of the present invention's proposition.
Embodiment
Below with reference to Fig. 1, describe structure and the manufacture method thereof of the transparent electric capacity of coarse surface of the present invention in detail.For clarity sake, the equal not drawn on scale of each structure shown in accompanying drawing, and the present invention is not limited to structure shown in figure.
As shown in fig. 1, the transparent electric capacity of alligatoring of the present invention comprises the first transparency electrode 1, and it is as the bottom electrode of transparent electric capacity; Be positioned at the transparent insulation dielectric layer 2 in the first transparency electrode 1, it is as the charge storage portion of transparent electric capacity; And be positioned at the second transparency electrode 3 on transparent insulation dielectric layer 2, and it is as the top electrode of transparent electric capacity, and the surface that wherein the first transparency electrode 1 contacts with transparent insulation dielectric layer 2 with the second transparency electrode 3 is coarse surface 4.
Wherein the material of the first transparency electrode 1 and the second transparency electrode 3 can be the material with transparent conductivity, for example TCO(transparent conductive oxide), can be specifically ITO(tin indium oxide), ZnO(zinc oxide), SnO
2(tin oxide), FTO(fluorine doped indium oxide), ATO(antimony doped indium oxide), AZO(aluminium doped zinc oxide) in the laminated film of one or more or above-mentioned material.The material of the first transparency electrode 1 and the second transparency electrode 3 can be identical or different, and their thickness is less than or equal to 3 μ m, preferably 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
The material of transparent insulation dielectric layer 2 can be transparent inorganic material or transparent organic material, preferably clear organic material, specifically comprise: transparent polypropylene film, transparent polyester film (PET), transparent PPS (polyphenylene sulfide) films (PPS), transparency polycarbonate film (PC), transparent polyphenyl methylene naphthalene film (PEN), transparent polyvinylidene fluoride film (PVPF) etc., or the composite membrane of above-mentioned material, and the thickness of transparent insulation dielectric layer 2 is less than or equal to 3 μ m, preferred 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
The manufacture method of the transparent electric capacity in following key diagram 1.
Embodiment 1:
Step 1: the first transparency electrode 1 and the second transparency electrode 3 are provided;
Step 2: nickeliferous nanoparticle dispersion liquid is spin-coated on to the upper surface of the first transparency electrode 1 and the lower surface of the second transparency electrode 3, thereby forms individual layer nickel nano particle film;
Step 3: individual layer nickel nano particle film is dried, form the mask layer of the required individual layer nickel nano particle of ICP etching;
Step 4: utilize the mask layer of individual layer nickel nano particle to carry out ICP etching to the first transparency electrode 1 and the second transparency electrode 3, thereby form coarse surface 4 at the upper surface of the first transparency electrode 1 and the lower surface of the second transparency electrode 3;
Step 5: the mask layer of removing individual layer nickel nano particle;
Step 6: transparent insulation dielectric layer 2 is provided;
Step 7: sequential laminating the first transparency electrode 1, transparent insulation dielectric layer 2 and the second transparency electrode 3, form the transparent electric capacity with coarse surface.
Wherein the material of the first transparency electrode 1 and the second transparency electrode 3 can be the material with transparent conductivity, for example TCO(transparent conductive oxide), can be specifically ITO(tin indium oxide), ZnO(zinc oxide), SnO
2(tin oxide), FTO(fluorine doped indium oxide), ATO(antimony doped indium oxide), AZO(aluminium doped zinc oxide).The material of the first transparency electrode 1 and the second transparency electrode 3 can be identical or different, and their thickness is less than or equal to 3 μ m, preferably 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
The material of transparent insulation dielectric layer 2 can be transparent inorganic material or transparent organic material, preferably clear organic material, specifically comprise: transparent polypropylene film, transparent polyester film (PET), transparent PPS (polyphenylene sulfide) films (PPS), transparency polycarbonate film (PC), transparent polyphenyl methylene naphthalene film (PEN), transparent polyvinylidene fluoride film (PVPF) etc., and the thickness of transparent insulation dielectric layer 2 is less than or equal to 3 μ m, preferred 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
Embodiment 2:
Step 2: arrange respectively individual layer self assembly granules of polystyrene at the upper surface of the first transparency electrode 1 and the lower surface of the second transparency electrode 3, and fill silica dioxide gel between the gap of individual layer self assembly granules of polystyrene;
Step 3: individual layer self assembly granules of polystyrene is heated, thereby make the gasification of individual layer self assembly granules of polystyrene, form silicon dioxide relief pattern;
Step 4: utilize silicon dioxide relief pattern to carry out ICP etching to the first transparency electrode 1 and the second transparency electrode 3, thereby relief pattern is transferred at the upper surface of the first transparency electrode 1 and the lower surface of the second transparency electrode 3, thereby form coarse surface 4;
So far, detailed explanation above transparent electric capacity and the manufacture method thereof of coarse surface of the present invention, the electric capacity making with respect to existing method, the transparent electric capacity of coarse surface of the present invention is because its bottom electrode, top electrode and dielectric are therebetween all transparent material, therefore good to the permeability of light, not shading, thus light distributivity and the light transmission of whole display floater can be improved, and then improve the performance of display floater.And the surface that the bottom electrode of transparent electric capacity contacts with dielectric with top electrode is coarse surface, thereby strengthen the bottom electrode of transparent electric capacity and the adhesiveness between top electrode and dielectric, thereby improve the performance of transparent electric capacity.Embodiment mentioned above is only the preferred embodiments of the present invention, and it is intended to that the present invention will be described but not it is limited.In the situation that do not depart from the spirit and scope of claims of the present invention, those skilled in the art obviously can make any changes and improvements to the present invention, and protection scope of the present invention is limited by claims.
Claims (3)
1. a manufacture method for the transparent electric capacity of coarse surface, comprising:
The first transparency electrode and the second transparency electrode are provided;
The lower surface of the upper surface of the first transparency electrode and the second transparency electrode is carried out to alligatoring to form coarse surface;
Transparent insulation dielectric layer is provided;
Sequential laminating the first transparency electrode, transparent insulation dielectric layer and the second transparency electrode, form the transparent electric capacity with coarse surface.
2. the manufacture method of the transparent electric capacity of coarse surface according to claim 1, wherein coarse surface forms as follows:
Nickeliferous nanoparticle dispersion liquid is spin-coated on to the upper surface of the first transparency electrode and the lower surface of the second transparency electrode, thereby forms individual layer nickel nano particle film;
Individual layer nickel nano particle film is dried, form the mask layer of the required individual layer nickel nano particle of ICP etching;
Utilize the mask layer of individual layer nickel nano particle to carry out ICP etching to the first transparency electrode and the second transparency electrode, thereby form coarse surface at the upper surface of the first transparency electrode and the lower surface of the second transparency electrode;
Remove the mask layer of individual layer nickel nano particle.
3. the manufacture method of the transparent electric capacity of coarse surface according to claim 1, wherein coarse surface forms as follows:
At the upper surface of the first transparency electrode and the lower surface of the second transparency electrode, arrange respectively individual layer self assembly granules of polystyrene, and fill silica dioxide gel between the gap of individual layer self assembly granules of polystyrene;
Individual layer self assembly granules of polystyrene is heated, thereby make the gasification of individual layer self assembly granules of polystyrene, form silicon dioxide relief pattern;
Utilize silicon dioxide relief pattern to carry out ICP etching to the first transparency electrode and the second transparency electrode, thereby relief pattern is transferred at the upper surface of the first transparency electrode and the lower surface of the second transparency electrode, thereby form coarse surface.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110246884A (en) * | 2019-06-25 | 2019-09-17 | 京东方科技集团股份有限公司 | A kind of preparation method and array substrate, display panel of array substrate |
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| US20110122330A1 (en) * | 2009-11-23 | 2011-05-26 | Samsung Mobile Display Co., Ltd. | Liquid crystal display device and method of fabrication for the same |
| CN102694088A (en) * | 2012-06-06 | 2012-09-26 | 中国科学院半导体研究所 | Roughening method for indium tin oxide (ITO) nanobowl array of GaN-based light-emitting diode (LED) |
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| CN101819361A (en) * | 2009-02-26 | 2010-09-01 | 北京京东方光电科技有限公司 | TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof |
| CN102023428A (en) * | 2009-09-23 | 2011-04-20 | 北京京东方光电科技有限公司 | TFT-LCD array substrate and method for manufacturing the same |
| CN101702419A (en) * | 2009-10-30 | 2010-05-05 | 华南师范大学 | Surface roughening method of p-GaN layer or ITO layer in GaN-based LED chip structure |
| US20110122330A1 (en) * | 2009-11-23 | 2011-05-26 | Samsung Mobile Display Co., Ltd. | Liquid crystal display device and method of fabrication for the same |
| CN102694088A (en) * | 2012-06-06 | 2012-09-26 | 中国科学院半导体研究所 | Roughening method for indium tin oxide (ITO) nanobowl array of GaN-based light-emitting diode (LED) |
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| CN110246884A (en) * | 2019-06-25 | 2019-09-17 | 京东方科技集团股份有限公司 | A kind of preparation method and array substrate, display panel of array substrate |
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