CN103594457A - Transparent capacitor - Google Patents
Transparent capacitor Download PDFInfo
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- CN103594457A CN103594457A CN201310557629.1A CN201310557629A CN103594457A CN 103594457 A CN103594457 A CN 103594457A CN 201310557629 A CN201310557629 A CN 201310557629A CN 103594457 A CN103594457 A CN 103594457A
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Abstract
The invention discloses a transparent capacitor which comprises a first transparent electrode (1), a transparent insulating medium layer (2) and a second transparent electrode (3). The transparent insulating medium layer is arranged on the first transparent electrode (1), and the second transparent electrode (3) is arranged on the transparent insulating medium layer (2). All layers of the transparent capacitor are made of transparent materials, so that the transparent capacitor is good in light transmission and free of light shielding. Thus, the light distribution and the light transmission of the whole display panel are improved, and further the performance of the display panel is improved.
Description
Technical field
The present invention relates to field of semiconductor devices, particularly a kind of transparent electric capacity.
Background technology
In demonstration field, active matrix display panel field particularly, active matrix display panel comprises for driving the thin-film transistor of pixel cell, the holding capacitor that is positioned at the pixel electrode on thin-film transistor and is electrically connected to pixel electrode.Holding capacitor, for stored charge, generally includes capacitor lower electrode, electric capacity top electrode and dielectric between the two.In active matrix display panel, can utilize transparent material to make transparent film transistor, such as materials such as ZnO, can improve like this whole clearing degree of display floater, improve light and take out efficiency, and conventionally all adopt conventional material manufacture for the holding capacitor of stored charge, conventional material is opaque, therefore understand shading, thereby affect the transparency of display floater, and then affect the performance of whole display floater.
Summary of the invention
In view of this, the present invention is directed to the problem of prior art, proposed a kind of transparent electric capacity.It is applied in active matrix display panel and as holding capacitor, the bottom electrode of transparent electric capacity, top electrode and dielectric are therebetween all transparent material, permeability to light is good, not shading, thereby can improve light distributivity and the light transmission of whole display floater, and then improve the performance of display floater.
The transparent electric capacity that the present invention proposes comprises:
The first transparency electrode 1;
Be positioned at the transparent insulation dielectric layer 2 in the first transparency electrode 1; And
Be positioned at the second transparency electrode 3 on transparent insulation dielectric layer 2.
Accompanying drawing explanation
Accompanying drawing 1 is the overall structure of the transparent electric capacity of the present invention's proposition.
Embodiment
Below with reference to Fig. 1, describe structure and the manufacture method thereof of transparent electric capacity of the present invention in detail.For clarity sake, the equal not drawn on scale of each structure shown in accompanying drawing, and the present invention is not limited to structure shown in figure.
As shown in fig. 1, transparent electric capacity of the present invention comprises the first transparency electrode 1, and it is as the bottom electrode of transparent electric capacity; Be positioned at the transparent insulation dielectric layer 2 in the first transparency electrode 1, it is as the charge storage portion of transparent electric capacity; And being positioned at the second transparency electrode 3 on transparent insulation dielectric layer 2, it is as the top electrode of transparent electric capacity.
Wherein the material of the first transparency electrode 1 and the second transparency electrode 3 can be the material with transparent conductivity, for example TCO(transparent conductive oxide), can be specifically ITO(tin indium oxide), ZnO(zinc oxide), SnO
2(tin oxide), FTO(fluorine doped indium oxide), ATO(antimony doped indium oxide), AZO(aluminium doped zinc oxide) in the laminated film of one or more or above-mentioned material.The material of the first transparency electrode 1 and the second transparency electrode 3 can be identical or different, and their thickness is less than or equal to 3 μ m, preferably 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
The material of transparent insulation dielectric layer 2 can be transparent inorganic material or transparent organic material, preferably clear organic material, specifically comprise: transparent polypropylene film, transparent polyester film (PET), transparent PPS (polyphenylene sulfide) films (PPS), transparency polycarbonate film (PC), transparent polyphenyl methylene naphthalene film (PEN), transparent polyvinylidene fluoride film (PVPF) etc., or the composite membrane of above-mentioned material, and the thickness of transparent insulation dielectric layer 2 is less than or equal to 3 μ m, preferred 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
The manufacture method of the transparent electric capacity in following key diagram 1.
Step 1: form the first transparency electrode 1;
Step 2: form transparent insulation dielectric layer 2 by techniques such as coating, silk screen printings in the first transparency electrode 1;
Step 3: form the second transparency electrode 3 by techniques such as evaporation or sputters on transparent insulation dielectric layer 2.
Wherein the material of the first transparency electrode 1 and the second transparency electrode 3 can be the material with transparent conductivity, for example TCO(transparent conductive oxide), can be specifically ITO(tin indium oxide), ZnO(zinc oxide), SnO
2(tin oxide), FTO(fluorine doped indium oxide), ATO(antimony doped indium oxide), AZO(aluminium doped zinc oxide).The material of the first transparency electrode 1 and the second transparency electrode 3 can be identical or different, and their thickness is less than or equal to 3 μ m, preferably 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
The material of transparent insulation dielectric layer 2 can be transparent inorganic material or transparent organic material, preferably clear organic material, specifically comprise: transparent polypropylene film, transparent polyester film (PET), transparent PPS (polyphenylene sulfide) films (PPS), transparency polycarbonate film (PC), transparent polyphenyl methylene naphthalene film (PEN), transparent polyvinylidene fluoride film (PVPF) etc., and the thickness of transparent insulation dielectric layer 2 is less than or equal to 3 μ m, preferred 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
So far, detailed explanation above transparent electric capacity of the present invention and manufacture method thereof, the electric capacity making with respect to existing method, transparent electric capacity of the present invention is because its bottom electrode, top electrode and dielectric are therebetween all transparent material, therefore good to the permeability of light, not shading, thus light distributivity and the light transmission of whole display floater can be improved, and then improve the performance of display floater.Embodiment mentioned above is only the preferred embodiments of the present invention, and it is intended to that the present invention will be described but not it is limited.In the situation that do not depart from the spirit and scope of claims of the present invention, those skilled in the art obviously can make any changes and improvements to the present invention, and protection scope of the present invention is limited by claims.
Claims (6)
1. a transparent electric capacity, comprising:
The first transparency electrode, it is as the bottom electrode of transparent electric capacity;
Be positioned at the transparent insulation dielectric layer in the first transparency electrode, it is as the charge storage portion of transparent electric capacity; And
Be positioned at the second transparency electrode on transparent insulation dielectric layer, it is as the top electrode of transparent electric capacity.
2. transparent electric capacity according to claim 1, wherein:
The material of the first transparency electrode and the second transparency electrode is the material with transparent conductivity, for example TCO.
3. transparent electric capacity according to claim 2, wherein:
TCO is ITO, ZnO, SnO
2, one or more or above-mentioned material in FTO, ATO, AZO laminated film.
4. transparent electric capacity according to claim 2, wherein:
The thickness of the first transparency electrode and the second transparency electrode is less than or equal to 3 μ m, preferably 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
5. transparent electric capacity according to claim 2, wherein:
The material of transparent insulation dielectric layer comprises: the composite membrane of transparent polypropylene film, transparent polyester film (PET), transparent PPS (polyphenylene sulfide) films (PPS), transparency polycarbonate film (PC), transparent polyphenyl methylene naphthalene film (PEN), transparent polyvinylidene fluoride film (PVPF) or above-mentioned material.
6. transparent electric capacity according to claim 2, wherein:
The thickness of transparent insulation dielectric layer is less than or equal to 3 μ m, preferably 0.3 μ m-3 μ m, more preferably 1 μ m-2.6 μ m, more preferably 1.2 μ m-2.2 μ m, more preferably 1.45-1.75 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310557629.1A CN103594457A (en) | 2013-11-08 | 2013-11-08 | Transparent capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310557629.1A CN103594457A (en) | 2013-11-08 | 2013-11-08 | Transparent capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103594457A true CN103594457A (en) | 2014-02-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310557629.1A Pending CN103594457A (en) | 2013-11-08 | 2013-11-08 | Transparent capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103594457A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6170770A (en) * | 1984-09-13 | 1986-04-11 | Sharp Corp | Solar cell having energy accumulating function |
| JPH04336530A (en) * | 1991-05-14 | 1992-11-24 | Mitsubishi Electric Corp | Liquid crystal display |
| US6084579A (en) * | 1996-11-29 | 2000-07-04 | Sanyo Electric Co., Ltd. | Display apparatus using electroluminescence elements |
| US20100073530A1 (en) * | 2008-09-22 | 2010-03-25 | Palo Alto Research Center Incorporated | Method and Apparatus for Using Thin-Film Transistors and MIS Capacitors as Light-Sensing Elements in Charge Mapping Arrays |
| US20110297944A1 (en) * | 2010-06-07 | 2011-12-08 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
-
2013
- 2013-11-08 CN CN201310557629.1A patent/CN103594457A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6170770A (en) * | 1984-09-13 | 1986-04-11 | Sharp Corp | Solar cell having energy accumulating function |
| JPH04336530A (en) * | 1991-05-14 | 1992-11-24 | Mitsubishi Electric Corp | Liquid crystal display |
| US6084579A (en) * | 1996-11-29 | 2000-07-04 | Sanyo Electric Co., Ltd. | Display apparatus using electroluminescence elements |
| US20100073530A1 (en) * | 2008-09-22 | 2010-03-25 | Palo Alto Research Center Incorporated | Method and Apparatus for Using Thin-Film Transistors and MIS Capacitors as Light-Sensing Elements in Charge Mapping Arrays |
| US20110297944A1 (en) * | 2010-06-07 | 2011-12-08 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140219 |
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| RJ01 | Rejection of invention patent application after publication |