CN103589417B - Phosphor, preparation method thereof, and light emitting diode using phosphor - Google Patents
Phosphor, preparation method thereof, and light emitting diode using phosphor Download PDFInfo
- Publication number
- CN103589417B CN103589417B CN201210286056.9A CN201210286056A CN103589417B CN 103589417 B CN103589417 B CN 103589417B CN 201210286056 A CN201210286056 A CN 201210286056A CN 103589417 B CN103589417 B CN 103589417B
- Authority
- CN
- China
- Prior art keywords
- fluorescent
- fluorescent material
- phosphor
- manufacture method
- powder grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Led Device Packages (AREA)
Abstract
The invention relates to phosphor, a preparation method thereof, and a light emitting diode using the phosphor. The phosphor prepared by the above method comprises a phosphor particle and a silicon shell covering out of the phosphor particle; and the silicon shell is separated from the phosphor particle through a gas layer. Since the phosphor contains the gas layer, the size of the phosphor becomes large. Weight of the gas layer can be nearly neglected, so that density of the phosphor becomes smaller. During a process for encapsulating the light emitting diode, the phosphor does not sediment in the bottom of an encapsulation layer but uniformly distributed in the encapsulation layer, thereby facilitating uniform light mixing of the light emitting diode and enabling radiated light to be fitted an ideal light better. The invention also provides a preparation method for the phosphor and the light emitting diode using the phosphor.
Description
Technical field
The present invention relates to a kind of fluorescent material, especially a kind of fluorescent powder of luminescent diode and manufacture method thereof and use the light-emitting diode of this fluorescent material.
Background technology
LED(light-emitting diode, Light-emitting diode) industry is one of industry attracted most attention in recent years, be developed so far, LED product has had energy-conservation, power saving, high efficiency, the reaction time is fast, the life cycle time is long and not mercurous, have the advantages such as environmental benefit, is therefore considered to the best light source of new green energy conservation from generation to generation illumination.For a change light-emitting diode go out light color, generally can mix fluorescent material in packing colloid when encapsulation LED.But, fluorescent powder grain due to proportion great compared with the ratio of packing colloid, thus often occur that fluorescent material is deposited in the phenomenon bottom encapsulated layer, cause the problem that light emitting diode light mixing is uneven.
Summary of the invention
In view of this, a kind of fluorescent material that can mix in encapsulated layer and manufacture method thereof are provided to provide and use the light-emitting diode of this fluorescent material.
A kind of fluorescent material manufacture method, it comprises the steps: to provide a fluorescent powder grain; Form a polymer material layer and cover this fluorescent powder grain; Form a silicon housing in this polymer material layer surface; Etch this polymer material layer to make to form a gas blanket between this silicon housing and this fluorescent powder grain.
By the fluorescent material that above-mentioned manufacture method is made, comprise fluorescent powder grain and cover at the silicon housing outside fluorescent powder grain, silicon housing is separated by gas blanket and fluorescent powder grain.
A kind of light-emitting diode, comprises light-emitting diode chip for backlight unit and is covered in the encapsulated layer on this light-emitting diode chip for backlight unit, be distributed with fluorescent material as above in described encapsulated layer.
Due to this fluorescent material air inclusion layer, therefore the volume of fluorescent material becomes large, but the weight of gas blanket almost can be ignored, then cause the density of fluorescent material to diminish.Again due in the process of encapsulation LED this fluorescent material not easily fall to the bottom of encapsulated layer and be dispersed in equably in encapsulated layer, therefore this fluorescent material is conducive to the uniform mixed light of light-emitting diode, makes bright dipping better.
Accompanying drawing explanation
Fig. 1 is the step one of fluorescent material manufacture method of the present invention.
Fig. 2 is the step 2 of fluorescent material manufacture method of the present invention.
Fig. 3 is the step 3 of fluorescent material manufacture method of the present invention.
Fig. 4 is the step 4 of fluorescent material manufacture method of the present invention.
Fig. 5 is the schematic diagram that the fluorescent material of method manufacture shown in Fig. 1 to Fig. 4 of the present invention is applied to light-emitting diode.
Main element symbol description
| 10 | Fluorescent powder grain |
| 20 | Polymer material layer |
| 30 | Silicon housing |
| 40 | Gas blanket |
| 50 | Fluorescent material |
| 60 | Encapsulated layer |
| 100 | Light-emitting diode |
Following embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Refer to Fig. 1-4, the manufacture method of fluorescent material 50 of the present invention mainly comprises following each step:
Step one: as shown in Figure 1, provides a fluorescent powder grain 10.This fluorescent powder grain 10 is spherical, and its diameter is about 5-50um.The fluorescent materials such as this fluorescent powder grain 10 is yttrium-aluminium-garnet (YAG), TAG, silicate (silicate), nitride (nitride) are made.
Step 2: as shown in Figure 2, forms the surface that a polymer material layer 20 covers this fluorescent powder grain 10.In present embodiment, this polymer material layer 20 is polyvinylpyrrolidone (PVP) material layer, and is take the mode of physical absorption to form this polymer material layer 20.Each segment thickness of this polymer material layer 20 is equal.
Step 3: as shown in Figure 3, has surface coverage the fluorescent powder grain 10 of polymer material layer 20 to put into particular solution and forms a silicon housing 30.This silicon housing 30 passes through to be formed in the basic conditions primarily of tetraethoxysilane (TEOS).In present embodiment, the softex kw (CTAB) of this tetraethoxysilane and NaOH (NaOH) solution and certain concentration be mixed to form reaction dissolvent.This mixed liquor with tetraethoxysilane is warmed to 60 DEG C, then the fluorescent powder grain 10 being coated with polymer material layer 20 is placed in mixed liquor, tetraethoxysilane generation sol-gel (sol-gel) reaction then in solution, and form the silicon housing 30 with porous in this polymer material layer 20 surface.Due in the basic conditions, polymer material layer 20 is also etched simultaneously, but its etch-rate is less than the speed of tetraethoxysilane generation sol gel reaction, and therefore this silicon housing 30 can be successfully shaping.Preferably, in this step, the time that fluorescent powder grain 10 is immersed in this particular solution is shorter, and this polymer material layer 20 can not be etched substantially.
Step 4: as shown in Figure 4, utilizes etching solution to remove this polymer material layer 20.In the present embodiment, this etching solution is NaOH (NaOH) solution.After removing this polymer material layer 20, filled between this fluorescent powder grain 10 and this silicon housing 30 by gas, the position of original polymer material layer 20 forms a gas blanket 40, thus forms the fluorescent material 50 of yolk shape.In the present embodiment, filled between this fluorescent powder grain 10 and this silicon housing 30 by air, this gas blanket 40 is air layer.Certainly, also can be filled by nitrogen or other gas between this fluorescent powder grain 10 and this silicon housing 30, thus form other gas blankets.In addition, in this step, the time of soaking this etching solution is longer than the time of soaking particular solution in previous step, and therefore this polymer material layer 20 can all be etched.
Understandably, when being transitioned into step 4 from step 3, this particular solution can not continue to use with changing, and also the fluorescent material 50 do not manufactured can be taken out from the particular solution step 3, then put into other pure cerium hydroxide sodium etching solution.If take the mode not changing solution, because mixed liquor is mixed by sodium hydroxide solution and softex kw solution, its catalytic action had makes the synthesis speed of silicon housing 30 be greater than the etched speed of this polymer material layer 20.Therefore, even if do not change this particular solution, the forming step of this fluorescent material 50 remains first formation silicon housing 30 and removes polymer material layer 20 again.Again because this silicon housing 30 has multiple minute aperture, therefore etching solution can enter this silicon housing 30 inside and then be removed by polymer material layer 20.
Referring again to Fig. 5, show the schematic diagram that the fluorescent material 50 manufactured by said method is applied to light-emitting diode 100.This light-emitting diode 100 comprises LED chip and covers the encapsulated layer 60 of this LED chip, and this fluorescent material 50 is uniformly distributed in this encapsulated layer 60.
The fluorescent material 50 manufactured by above method, comprise fluorescent powder grain 10, around this fluorescent powder grain 10 gas blanket 40 and cover at the silicon housing 30 of this gas blanket 40 periphery.The refractive index of this silicon housing 30 is less than the refractive index of this fluorescent powder grain 10, and therefore the conversion efficiency of fluorescent material 50 and luminous efficiency are promoted further.Due to this fluorescent material 50 air inclusion layer 40, therefore the volume of fluorescent material 50 becomes large, but the weight of gas blanket 40 almost can be ignored, then cause the density of fluorescent material 50 to diminish.Again due to the micro-cavity that the aperture of multiple apertures of this silicon housing 30 is between molecule, therefore can't to flow into this silicon housing 30 by the plurality of aperture inner for packing colloid, then the low-density state of this fluorescent material 50 retainer.Because this fluorescent material 50 not easily falls to the bottom of encapsulated layer 60 and is dispersed in encapsulated layer 60 equably in the process of encapsulation LED 100, therefore utilize low-density fluorescent material 50 to be conducive to the uniform mixed light of light-emitting diode 100, make bright dipping better.
Claims (14)
1. a fluorescent material manufacture method, it comprises the steps:
One fluorescent powder grain is provided;
Form a polymer material layer and cover this fluorescent powder grain;
Form a silicon housing in this polymer material layer surface;
Etch this polymer material layer to make to form a gas blanket between this silicon housing and this fluorescent powder grain.
2. fluorescent material manufacture method as claimed in claim 1, is characterized in that: this polymer material layer is polyvinylpyrrolidone material layer.
3. fluorescent material manufacture method as claimed in claim 1, is characterized in that: the thickness of this polymer material layer is homogeneous.
4. fluorescent material manufacture method as claimed in claim 1, is characterized in that: this silicon housing is put into the alkaline solution with tetraethoxysilane by the fluorescent powder grain this being coated with polymer material layer and formed.
5. fluorescent material manufacture method as claimed in claim 4, is characterized in that: this alkaline solution is the mixed liquor adding softex kw in sodium hydroxide solution.
6. fluorescent material manufacture method as claimed in claim 5, it is characterized in that: before the fluorescent powder grain this being coated with polymer material layer puts into this alkaline solution, first this alkaline solution is warmed to 60 DEG C, then generates this silicon housing by tetraethoxysilane generation sol gel reaction.
7. fluorescent material manufacture method as claimed in claim 6, is characterized in that: this silicon housing has multiple minute aperture.
8. fluorescent material manufacture method as claimed in claim 1, is characterized in that: this polymer material layer is formed this gas blanket by sodium hydroxide solution etching.
9. fluorescent material manufacture method as claimed in claim 8, is characterized in that: this gas blanket is air layer.
10. a fluorescent material, comprises fluorescent powder grain and covers at the silicon housing outside fluorescent powder grain, form gas blanket between silicon housing and fluorescent powder grain.
11. fluorescent material as claimed in claim 10, is characterized in that: this silicon housing is formed in the basic conditions by tetraethoxysilane.
12. fluorescent material as claimed in claim 10, is characterized in that: this silicon housing has multiple minute aperture.
13. fluorescent material as claimed in claim 10, is characterized in that: this gas blanket is air layer.
14. 1 kinds of light-emitting diodes, comprise light-emitting diode chip for backlight unit and are covered in the encapsulated layer on this light-emitting diode chip for backlight unit, it is characterized in that: be distributed with the fluorescent material as described in claim 10 to 13 any one in described encapsulated layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210286056.9A CN103589417B (en) | 2012-08-13 | 2012-08-13 | Phosphor, preparation method thereof, and light emitting diode using phosphor |
| TW101133569A TW201406922A (en) | 2012-08-13 | 2012-09-13 | Phosphor and manufacturing method thereof and light-emitting diode using the phosphor thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210286056.9A CN103589417B (en) | 2012-08-13 | 2012-08-13 | Phosphor, preparation method thereof, and light emitting diode using phosphor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103589417A CN103589417A (en) | 2014-02-19 |
| CN103589417B true CN103589417B (en) | 2015-03-25 |
Family
ID=50079743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210286056.9A Expired - Fee Related CN103589417B (en) | 2012-08-13 | 2012-08-13 | Phosphor, preparation method thereof, and light emitting diode using phosphor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103589417B (en) |
| TW (1) | TW201406922A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102294039A (en) * | 2011-08-22 | 2011-12-28 | 东北师范大学 | Preparation method of yolk-eggshell nanocapsule with fluorescence and magnetism |
| CN102350281A (en) * | 2011-06-24 | 2012-02-15 | 东北师范大学 | Preparation method of fluorescent mesoporous silica-based core-shell nanoscale capsule |
-
2012
- 2012-08-13 CN CN201210286056.9A patent/CN103589417B/en not_active Expired - Fee Related
- 2012-09-13 TW TW101133569A patent/TW201406922A/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102350281A (en) * | 2011-06-24 | 2012-02-15 | 东北师范大学 | Preparation method of fluorescent mesoporous silica-based core-shell nanoscale capsule |
| CN102294039A (en) * | 2011-08-22 | 2011-12-28 | 东北师范大学 | Preparation method of yolk-eggshell nanocapsule with fluorescence and magnetism |
Non-Patent Citations (1)
| Title |
|---|
| 可控蚀刻荧光二氧化硅纳米颗粒及其载药性质的研究;张凌宇;《中国科技论文在线》;20091215;第4卷(第12期);实验部分 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103589417A (en) | 2014-02-19 |
| TW201406922A (en) | 2014-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201539737U (en) | LED lamp | |
| CN102034917A (en) | Optical-semiconductor encapsulating material | |
| CN102222750A (en) | White light LED (Light Emitting Diode) device and manufacturing method thereof | |
| CN105470374A (en) | Quantum dot packaging structure and preparation method thereof | |
| CN103733362A (en) | LED device having improved luminous efficacy | |
| CN202564431U (en) | White light led packaging structure | |
| CN102810618B (en) | Semiconductor packaging structure | |
| CN102185048A (en) | Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip | |
| CN103589417B (en) | Phosphor, preparation method thereof, and light emitting diode using phosphor | |
| CN202791789U (en) | Light-emitting diode (LED) fluorescent lampshade | |
| CN102721003A (en) | LED fluorescent lampshade and manufacturing method thereof | |
| CN203026550U (en) | LED packaging device | |
| CN201623177U (en) | LED encapsulating structure with uniform illumination | |
| CN201462517U (en) | LED bulb featuring different white light excitation modes | |
| CN103500786B (en) | The LED/light source of a kind of full angle luminescence and its preparation method | |
| CN104752588A (en) | Fluorescent glue coating method for flip chip | |
| CN103137839B (en) | A kind of sheet type White-light LED package structure | |
| CN102751420A (en) | Light-emitting diode packaging structure | |
| CN203489066U (en) | Whole-body light-emitting LED light source and LED lamp | |
| CN113571625A (en) | Aggregation-induced emission fluorescent powder packaged LED light source and preparation method thereof | |
| CN104465936B (en) | Light emitting diode | |
| CN201966248U (en) | LED wafer component | |
| CN207674291U (en) | Energy saving high-power LED mine lamp | |
| CN206236706U (en) | A kind of LED encapsulation and its fluorescent material housing | |
| CN110767792A (en) | COB light source and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: ADVANCED OPTOELECTRONIC TECHNOLOGY INC. Effective date: 20150317 Owner name: SCIENBIZIP CONSULTING (SHENZHEN) CO., LTD. Free format text: FORMER OWNER: ZHANJING TECHNOLOGY (SHENZHEN) CO., LTD. Effective date: 20150317 Owner name: ZHONGSHAN YUNCHUANG INTELLECTUAL PROPERTY SERVICE Free format text: FORMER OWNER: SCIENBIZIP CONSULTING (SHENZHEN) CO., LTD. Effective date: 20150317 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 518109 SHENZHEN, GUANGDONG PROVINCE TO: 528437 ZHONGSHAN, GUANGDONG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150317 Address after: 528437 Guangdong province Zhongshan Torch Development Zone, Cheung Hing Road 6 No. 222 north wing trade building room Patentee after: Zhongshan yunchuang Intellectual Property Service Co.,Ltd. Address before: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Patentee before: SCIENBIZIP CONSULTING (SHEN ZHEN) Co.,Ltd. Effective date of registration: 20150317 Address after: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Patentee after: SCIENBIZIP CONSULTING (SHEN ZHEN) Co.,Ltd. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Street tabulaeformis Industrial Zone tenth east two Ring Road No. two Patentee before: ZHANJING Technology (Shenzhen) Co.,Ltd. Patentee before: Advanced Optoelectronic Technology Inc. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150325 Termination date: 20150813 |
|
| EXPY | Termination of patent right or utility model |