CN103579502B - A kind of organic field effect tube and preparation method thereof - Google Patents

A kind of organic field effect tube and preparation method thereof Download PDF

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CN103579502B
CN103579502B CN201310549310.4A CN201310549310A CN103579502B CN 103579502 B CN103579502 B CN 103579502B CN 201310549310 A CN201310549310 A CN 201310549310A CN 103579502 B CN103579502 B CN 103579502B
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ultraviolet light
curing
light polymerization
resin
acid
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CN103579502A (en
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于军胜
施薇
李�杰
祁一歌
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

The invention discloses a kind of organic field effect tube and preparation method thereof, its structure comprises substrate, gate electrode, gate insulator, organic semiconductor layer, source electrode drain electrode.The present invention, by introducing quantitative dual system solidification glue in described organic semiconductor layer, makes organic semiconductor layer occur crosslinked.By changing the ratio of dual system solidification glue in organic semiconductor layer, control the degree of crystallinity of organic semiconductor layer.The invention solves the problem that the crystallization of soluble organic semiconductor layer is bad, improve the mobility of device, improve the environmental stability of organic field effect tube simultaneously.

Description

A kind of organic field effect tube and preparation method thereof
Technical field
The present invention relates to technical field of electronic components, be specifically related to a kind of organic field effect tube and preparation method thereof.
Background technology
Field-effect transistor is the foundation stone of information age today, and it has a very wide range of applications in large scale integrated circuit.According to the difference of semi-conducting material, field-effect transistor can be divided into inorganic field effect pipe transistor and organic field effect tube (Organicfield-effecttransistor is called for short OFET) two large classes.Wherein OFET possesses flexibility, frivolous and plastic due to it, drives, transducer and memory is multi-field possesses huge applications potentiality at Flexible Displays.OFET, since Tsumura reported first in 1986, has been subject to the concern of researcher and has obtained to develop rapidly deeply.Compared with inorganic field effect transistor, OFET has significant advantage in all many-sides.Organic material has material ratio and is easier to obtain and price is relatively cheap, and preparation technology is simpler, the advantage that preparation condition is gentleer.The OFET prepared based on organic material possesses low preparation cost and accessible site is used as active matrix driving in display device, if utilize the extensive film technique of organic film, can prepare large-area display device.
Organic semiconductor layer in organic field effect tube has conclusive effect to device performance, significantly can be changed the film forming characteristics also further performance affecting organic field effect tube of soluble organic semiconductor material by the selection of different thin film-forming methods, aftertreatment technology and solvent.Because the organic semiconductor layer surface roughness prepared based on solwution method is relatively large, crystallinity is bad, and the device mobility that its performance is generally prepared compared with thermal evaporation is low, does not reach application requirement.At present, the topmost mode improving organic semiconductor layer degree of crystallinity prepared by solwution method adopts the technique of solvent after annealing to carry out reprocessing to film, but adopt high temperature post growth annealing to require higher to the heat resistance of other functional layers of device, and make the manufacture craft of whole device more complicated.Meanwhile, organic field effect tube is easier to the impact being subject to water in air vapour or oxygen, and make device more harsh to the requirement of operational environment, therefore device lifetime also reduces.
Summary of the invention
Technical problem to be solved by this invention how to provide a kind of organic field effect tube and preparation method thereof, and object is: (1) improves the mobility of device; (2) environmental stability of device is improved.
In order to solve the problem, technical scheme of the present invention is as follows: a kind of organic field effect tube, its structure comprises substrate, gate electrode, gate insulator, organic semiconductor layer, source electrode and drain electrode, it is characterized in that, described in have gate insulator to add 0.1% ~ 1% dual system solidification glue be cross-linked, described dual system solidification glue by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.
Further, described dual UV curable paint comprises ultraviolet light polymerization-heat cured system, ultraviolet light polymerization-microwave curing system, ultraviolet light polymerization-anaerobic curing system or ultraviolet light polymerization-electronic beam curing system.
Further, described dual UV curable paint comprises following system:
1. free radical type ultraviolet light polymerization-heat cured system, raw material comprises the component of following weight composition:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing;
2. free radical type ultraviolet light polymerization-microwave curing system, raw material comprises the component of following weight composition:
Solidification process is: first carry out ultraviolet light polymerization, then carries out microwave curing, then carries out ultraviolet light polymerization; Or first carry out microwave curing, then carry out ultraviolet light polymerization, then heat or microwave curing;
3. free radical type ultraviolet light polymerization-anaerobic curing system, raw material comprises the component of following weight composition:
Solidification process is: first carry out ultraviolet light polymerization, is not then subject to illumination and adhesive segment under being in anoxia condition can carry out anaerobic curing reaction automatically, then carries out ultraviolet light polymerization;
4. free radical type ultraviolet light polymerization-electronic beam curing system, raw material comprises the component of following weight composition:
Solidification process is: first carry out ultraviolet light polymerization, then carries out electronic beam curing under vacuo, then carries out ultraviolet light polymerization;
5. cation type ultraviolet photo-curing-heat cured system, raw material comprises the component of following weight composition:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing;
6. cation type ultraviolet photo-curing-microwave curing system, raw material comprises the component of following weight composition:
Solidification process is: first carry out ultraviolet light polymerization, then carries out microwave curing, then carries out ultraviolet light polymerization; Or first carry out microwave curing, then carry out ultraviolet light polymerization, then heat or microwave curing;
7. cation type ultraviolet photo-curing-anaerobic curing system, raw material comprises the component of following weight composition:
Solidification process is: first carry out ultraviolet light polymerization, is not then subject to illumination and adhesive segment under being in anoxia condition can carry out anaerobic curing reaction automatically, then carries out ultraviolet light polymerization;
8. cation type ultraviolet photo-curing-electronic beam curing system, raw material comprises the component of following weight composition:
Solidification process is: first carry out ultraviolet light polymerization, then carries out electronic beam curing under vacuo, then carries out ultraviolet light polymerization.
Further, described 1. 2. 5. 6. in system, free radical thermal curing agents comprises: ethylenediamine, hexamethylene diamine, triethylene tetramine, ethoxy diethylenetriamine, hydroxyl isopropyl diethylenetriamine, poly-ethanedioic acid adipamide, diformazan ammonia propylamine, 4-methyl-diaminopropane, dicyandiamide, two amido diphenyl sulfones, two aminodiphenylmethane, m-phenylene diamine (MPD), diethyl toluene diamine, N-(aminopropyl)-toluenediamine, dimethylethanolamine, dimethyl Bian amine, triethylbenzyl ammonium chloride, benzyl-dimethylamine, N-benzyl dimethylamine, 2,4,6 ,-three-(dimethylamino methyl)-phenol, phenol formaldehyde (PF) hexamethylene diamine, N, N-dimethyl benzylamine, 2-ethyl imidazol(e), 2-phenylimidazole, glyoxal ethyline, 2-ethyl imidazol(e), 2-ethyl-4-methylimidazole, 1-(2-amino-ethyl)-glyoxal ethyline, maleic anhydride, oxydiphthalic, phthalic anhydride, trimellitic anhydride, tetrabromo-benzene dicarboxylic acid anhydride, gather acetic anhydride in the ninth of the ten Heavenly Stems, sebacic dihydrazide, adipic dihydrazide, carbon acid dihydrazide, grass acid dihydrazide, succinic acid hydrazide ii, adipic dihydrazide, the amino polyacrylamide of N-, decanedioic acid hydrazides, M-phthalic acid hydrazides, to Para Hydroxy Benzoic Acid hydrazides, azelaic acid two hydrazides, isophthalic dihydrazide, ferrocene tetrafluoroborate, triallyl cyanurate, toluene di-isocyanate(TDI), '-diphenylmethane diisocyanate, hexamethylene diisocyanate, trimethyl hexamethylene diisocyanate, dicyclohexyl methyl hydride diisocyanate, XDI, tetramethylxylylene diisocyanate, methyl styrene isocyanates, hexahydrotoluene vulcabond, triphenyl first-4,4 ', 4 '-triisocyanate, diaminodiphenyl-methane, N-is to chlorophenyl-N-N-dimethyl urea, 3-phenyl-1,1-dimethyl urea, 3-rubigan-1,1-dimethyl urea, 4,4 '-diamino-diphenyl bis-phenol, polyurethanes, Lauxite, epoxy-ethylenediamine carbamate, 2,4,6-tri-(dimethylamino methyl) phenol, 2,4-diaminotoluene, polyurethane, methyl-etherified Lauxite, three (3-aminopropyl) amine, 2-amino-ethyl-two (3-aminopropyl) amine, 4,4 '-MDA, 4,4 '-diamino-diphenyl bis-phenol, 4,4 '-diamino-diphenyl sulfone, three (3-aminopropyl) amine, melmac, benzoguanamine resin, hexamethylol melamine resin, hexamethoxymethyl melamine resin, urea-melamine resin, polyester melamine, TCCA ester, aminotriazine resins, urethane acrylate, 4-aminopyridine resin, N-β-aminoethyl amino mylar, α-aminopyridine resin, aminodiphenylether resin, phosphoramidic-resin, hydroxyethylamino mylar, described microwave curing adhesive and hot setting adhesive use same material or different materials, described anaerobic curing adhesive comprises: methacrylate tetraethylene-glycol ester, methacrylate multicondensed ethylene glycol ester, triethylene Glycol double methyl methacrylate, ethyleneglycol dimethyacrylate, hydroxyethyl methacrylate or hydroxypropyl acrylate, methoxylated polyethylene glycol methacrylate, phthalic acid Triethylene Glycol, β-hydroxyethyl methacry-late, triethylene Glycol double methyl methacrylate, Dimethacryloylethylthioether, phthalic acid two (diethylene glycol (DEG) acrylate), Ethoxylated bisphenol A dimethylacrylate, dimethacrylate bisphenol-A ethylene glycol fat, second diester methacrylate, triethylene-glycol dimethylacrylate, triethlene glycol bismethylacrylate, glycol methacrylate, one diethyl acetal double methyl methacrylate, epoxy resin methacrylate, methacrylate diglycol ester, described electronic beam curing adhesive comprises: triphenol methylmethane tetraglycidel ether epoxy resin, bicyclopentadiene bisphenol-type epoxy resin, bisphenol A-type vinyl ester resin, epoxy vinyl ester resin, Epocryl, maleimide resin, 4, 4 '-diphenyl methane dimaleimide, bisphenol-A-Diphenyl Ether Bismaleimide, bisphenol-A maleic acid vinylite, ethylene bromide base ester resin, phenol formaldehyde epoxy vinyl ester resin, methylolation bisphenol A type epoxy resin, bisphenol A acrylates, urethane acrylate, bisphenol-A epoxide vinylester resin, bisphenol A benzoxazine-epoxy resin, bisphenol fluorene epoxy resin, bisphenol-a epoxy acrylate resin, bisphenol A diglycidyl ether or bisphenol-A epoxy chloropropene acid ester resin.
Further, 1. described ~ 4. in system, light trigger is for comprising benzoin and its derivatives as benzoin methyl ether, benzoin ethyl ether, acetophenone derivative or benzoin isopropyl ether; 5. described ~ 8. in system, cation light initiator comprises aromatic sulfonium salts, salt compounded of iodine or luxuriant molysite class; 1. described ~ 8. in system, sensitising agent comprises benzophenone, thia anthraquinone or Michler's keton, and auxiliary agent comprises plasticizer, thixotropic agent and filler.
Further, described plasticizer comprises: dioctyl phthalate, dibutyl phthalate, three vinyl butyl ether base phosphates, polyvinyl butyral resin, tributyl 2-acetylcitrate, repefral, diethyl phthalate, hexanedioic acid two (Butoxyethoxy) ethyl ester, isopropyl titanate, tetrabutyl titanate, citrate, trimellitic acid (2-ethyl) own ester, phthalic acid two (2-ethyl) own ester, decanedioic acid two (2-ethyl) own ester, Diethylene Glycol Dibenzoate, phthalic anhydride, dipropylene glycol dibenzoate and chlorosulfonated polyethylene, described coupling agent comprises methylvinyldichlorosilane, methyl hydrogen dichlorosilane, dimethyldichlorosilane, chlorodimethyl silane, vinyl trichlorosilane, γ-aminopropyltrimethoxysilane, dimethyl silicone polymer, poly-hydrogen methylsiloxane, poly-methyl methoxy radical siloxane, γ-methacrylic acid third vinegar base trimethoxy silane, gamma-aminopropyl-triethoxy-silane, γ-glycidol ether propyl trimethoxy silicane, aminopropyl silsesquioxane, γ-methacryloxypropyl trimethoxy silane, chain alkyl trimethoxy silane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-chloropropyl triethoxysilane, two-(the silica-based propyl group of γ-triethoxy), anilinomethyl triethoxysilane, N-β (aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-gamma-aminopropyl-triethoxy-silane, N-β (aminoethyl)-γ-aminopropyltriethoxy dimethoxysilane, γ-(2,3-epoxy third oxygen) propyl trimethoxy silicane, γ-(methacryloxypropyl) oxypropyl trimethyl silane, γ mercaptopropyitrimethoxy silane, γ-Mercaptopropyltriethoxysilane.
Further, described gate insulator comprises polystyrene (PS), polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinylidene fluoride (PVDF), one or more organic polymer insulating material of polyimides (PI) or silicon dioxide (SiO 2), alundum (Al2O3) (Al 2o 3), titanium oxide (Ti 2o 3) one or more inorganic insulating materials, thickness is 100 ~ 600nm.
Further, described organic semiconducting materials comprises soluble organic semiconductor material and gathers one or more of 3-hexyl thiophene (P3HT) or Tips-pentacene, and thickness is 30 ~ 300nm.
Further, described gate electrode, source electrode and leak electricity very metal or conductive film, wherein, source electrode and drain electrode thickness are 10 ~ 300nm.Described metal comprises one or more of gold, silver or copper, and described conductive film comprises one or more of tin indium oxide or zinc oxide.
The invention has the advantages that: in organic semiconductor layer, add dual system solidification glue, accurately easy control can be carried out by regulation and control dual system solidification glue proportion in organic semiconducting materials to the degree of crystallinity of organic semiconducting materials, improve the mobility of device; Dual system solidification glue can effectively reduce water oxygen in air to the erosion of organic material, improves the efficiency of element manufacturing simultaneously.
Accompanying drawing explanation
Fig. 1 is a kind of organic field effect tube structure involved in the present invention, is followed successively by from top to bottom: source electrode (1), drain electrode (2), organic semiconducting materials (3), dual system solidification glue (4), gate insulator (5), gate electrode (6), substrate (7).
Fig. 2 is the X-ray diffracting spectrum (XRD figure) of organic field effect tube.After adding 0.5% dual system solidification glue, P3HT obtains best crystallization.
Embodiment:
As shown in Figure 1, device architecture is followed successively by the concrete structure of device of the present invention from top to bottom: source electrode (1), drain electrode (2), organic semiconducting materials (3), dual system solidification glue (4), gate insulator (5), gate electrode (6), substrate (7); Described dual system solidification glue by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.
Described gate insulator comprises polystyrene (PS), polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinylidene fluoride (PVDF), one or more organic polymer insulating material of polyimides (PI) and silicon dioxide (SiO 2), alundum (Al2O3) (Al 2o 3), titanium oxide (Ti 2o 3) one or more inorganic insulating materials, thickness is 100-600nm; Described organic semiconducting materials comprises poly-3-hexyl thiophene (P3HT) and is prepared from one or more soluble organic semiconductor materials of Tips-pentacene (Tips-pentacene), and thickness is 30 ~ 300nm; Described gate electrode, source electrode and leak electricity very metal or conductive film, wherein, source electrode and drain electrode thickness are 10 ~ 300nm, and described metal comprises one or more of gold, silver and copper, and described conductive film comprises one or more of tin indium oxide and ZnO transparent.
In the present invention, each composition is described as follows:
UV-curing technology is owing to have employed ultraviolet light as the solidification energy, determine the limitation that there is self, be mainly manifested in: have certain restriction to application substrate shapes, low to band color system curing rate, deep layer and object shadow region are difficult to solidification, and after solidification, volume contraction causes more greatly poor adhesive force and light trigger residue problem.These deficiencies have impact on further developing of UV-curing technology and apply, and the shortcoming that after solidification, volume contraction is larger has also had a strong impact on the range of application of ultraviolet photocureable material.Dual cure (dual-curing) technology is the combination of photocuring and other curing.
In dual UV curable paint, the crosslinked or polymerization reaction of system is completed by two stages independently with differential responses principle, and one of them stage is by photocuring reaction, and another stage is undertaken by dark reaction.Wherein, photocuring can be free radical ultraviolet light polymerization, also can be cationic UV cure; Dark curing can be hot curing, electronic beam curing, anaerobic curing and Microwave Emulsifier-Free Polymerization.Photocuring so just can be utilized to make system fast shaping or reach surface drying, and utilize dark reaction to make dash area or floor portions completion of cure.
Stage of photocuring and dark curing can for free radical type and cationic ultra-violet curing adhesive, so there is free radical type and cationic hot curing.
Here is some typical system of lifting, and some concrete operating parameters.
Described base board for flexible optoelectronic part, free radical type ultraviolet curable agent comprises: the material of polyester-acrylate, epoxy-acrylate, urethane acrylates, polyethers-acrylate and following molecular structure;
Cation type ultraviolet photo-curing agent comprises: epoxy resin or modified epoxy.
Plasticizer comprises dioctyl phthalate, dibutyl phthalate, three vinyl butyl ether base phosphates, polyvinyl butyral resin, tributyl 2-acetylcitrate, repefral, diethyl phthalate, hexanedioic acid two (Butoxyethoxy) ethyl ester, isopropyl titanate, tetrabutyl titanate, citrate, trimellitic acid (2-ethyl) own ester, phthalic acid two (2-ethyl) own ester, decanedioic acid two (2-ethyl) own ester, Diethylene Glycol Dibenzoate, phthalic anhydride, dipropylene glycol dibenzoate and chlorosulfonated polyethylene, described coupling agent comprises methylvinyldichlorosilane, methyl hydrogen dichlorosilane, dimethyldichlorosilane, chlorodimethyl silane, vinyl trichlorosilane, γ-aminopropyltrimethoxysilane, dimethyl silicone polymer, poly-hydrogen methylsiloxane, poly-methyl methoxy radical siloxane, γ-methacrylic acid third vinegar base trimethoxy silane, gamma-aminopropyl-triethoxy-silane, γ-glycidol ether propyl trimethoxy silicane, aminopropyl silsesquioxane, γ-methacryloxypropyl trimethoxy silane, chain alkyl trimethoxy silane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-chloropropyl triethoxysilane, two-(the silica-based propyl group of γ-triethoxy), anilinomethyl triethoxysilane, N-β (aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-gamma-aminopropyl-triethoxy-silane, N-β (aminoethyl)-γ-aminopropyltriethoxy dimethoxysilane, γ-(2,3-epoxy third oxygen) propyl trimethoxy silicane, γ-(methacryloxypropyl) oxypropyl trimethyl silane, γ mercaptopropyitrimethoxy silane, γ-Mercaptopropyltriethoxysilane.
Free radical activity diluent is divided into exploitation first generation polyfunctional acrylate monomer comparatively early, the second generation polyfunctional acrylate monomer of recent development and more excellent third generation acrylic monomers.
Monofunctional reactive diluent has: styrene, NVP, Isooctyl acrylate monomer, hydroxy-ethyl acrylate and isobornyl acrylate, methacrylate phosphate and isobornyl methacrylate, and latter two is the good toughness reinforcing monomer of plasticising.
Difunctional reactive diluents has: triethylene glycol diacrylate, tripropylene glycol diacrylate, glycol diacrylate, polyethylene glycol diacrylate alcohol ester, neopentylglycol diacrylate and propoxyl group neopentylglycol diacrylate, acrylate functional monomers mainly contains 1,6-hexanediyl ester (HDDA), BDO diacrylate (BDDA), propylene glycol diacrylate (DPGDA), glycerol diacrylate (TPGDA), the trihydroxy methyl propane triacrylate (TMPTA) of trifunctional, pentaerythritol triacrylate (PETA), trihydroxy methyl propane triol triacrylate (TMPTMA), trimethylolpropane triacrylate, propoxylation trihydroxy is through propane tri, pentaerythrite three propylene alcohol ester, pentaerythritol propoxylate propylene alcohol ester, N, N-dihydroxy ethyl-3 amido methyl propionate, triethylene glycolbismethyl-acrylate, long-chain fat hydrocarbon glycidol ether acrylic acid, resorcinol bisglycidyl ether, double pentaerythritol C5 methacrylate, tri (propylene glycol) diacrylate, phthalic acid diethanol diacrylate (PDDA).They instead of active little first generation acrylic acid monofunctional monomer.But along with the develop rapidly of UV curing technology, their shortcomings large to the excitant of skin reveal.
Second generation polyfunctional acrylate monomer mainly introduces ethyoxyl or propoxyl group in the molecule, overcomes the shortcoming that excitant is large, also should have higher activity and state of cure.As ethoxylation trihydroxy methyl propane triol triacrylate (TMP (EO) TMA), propoxylation trihydroxy methyl propane triol triacrylate (TMP (PO) TMA), propoxylated glycerine triacrylate (G (PO) TA).Third generation acrylic monomers is mainly the acrylate containing methoxyl group, preferably resolves the contradiction of high curing rate and shrinkage, low state of cure.This kind of material has 1,6-hexylene glycol methoxyl group mono acrylic ester (HDOMEMA), ethoxylation neopentyl glycol methoxyl group mono acrylic ester (TMP (PO) MEDA).After introducing alkoxyl in molecule, the viscosity of monomer can be reduced, reduce the excitant of monomer simultaneously.
The compatibility of introducing to diluent monomer of alkoxyl also improves a lot, and vinyltriethoxysilane (A15I), gamma-methyl allyl acyloxypropyl trimethoxysilane (A174) can be used as monomer.
Cruel in various reactive epoxies diluent and various cyclic ethers, ring, vinyl ether monomers can as the diluent of cation photocuring resin.Wherein fast, the modest viscosity of vinyl ethers compound and oligomer curing rate, tasteless, nontoxic, can with epoxy resin with the use of.Vinyl ether monomers has: 1, 2, 3-propanetriol-diglycidyl-ether (EPON-812), triethyleneglycol divinylether (DVE-3), 1, 4-butanediol vinyl ethers (HBVE), cyclohexyl vinyl ether (CHVE), perfluoro methyl vinyl ether (PMVE), perfluoropropylvinylether, IVE, hydroxy butyl vinyl ether, vinyl ethyl ether, ethyl vinyl ether, ethyl vinyl ether propylene, ethylene glycol monoallyl ether, hydroxy butyl vinyl ether, butyl vinyl ether, chlorotrifluoroethylene (CTFE), triethylene glycol divinyl ether, methoxy ethylene, vinyl butyl ether, dodecyl vinyl (DDVE), cyclohexyl vinyl ether, tribenzyl-benzene phenol polyethenoxy base ether, tetrafluoroethylene-perfluoro propyl vinyl ether, tetrafluoroethylene-perfluoro propyl vinyl ether, tert-Butyl vinyl ether:
Epoxy compounds monomer has: 3,4-expoxycyclohexyl formic acid-3 ', 4 '-expoxycyclohexyl methyl esters (ERL-4221), bisphenol A type epoxy resin (EP), epoxy acrylate, epoxy vinyl ester, acrylic acid epoxy ester, epoxymethacrylate, water-soluble itaconic acid epoxy ester resin:
The effect of light trigger is after it absorbs UV energy, produces free radical through decomposing, thus the unsaturated bond polymerization in initiator system, crosslinking curing becomes an entirety.Conventional radical photoinitiator has cracking type and puies forward the large class of Hydrogen two.
Crack type photoinitiator: crack type photoinitiator mainly contains benzoin ethers (styrax ethers), benzil ketals and acetophenone.Crack type photoinitiator is chapped after absorption ultraviolet light, produces two free radicals, and free radical causes unsaturated group polymerization.Benzoin ethers (styrax ethers) comprising: styrax (Benzoin), benzoin methyl ether, benzoin ethyl ether (Benzoinethylether), benzoin isobutyl ether (Benzoinbutylether), styrax lose (Benzoinoxime), benzoin isopropyl ether, acylphosphine oxide comprises: 2, 4, 6 trimethylbenzoyl diphenyl phosphine oxides (TPO) and (2, 4, 6-trimethylbenzoyl) phenyl phosphine oxide (BAPOphenylbis (2, 4, 6-trimethylbenzoyl) phosphineoxide), phenyl two (2, 4, 6-trimethylbenzoyl) phosphine oxide (819), tetramethylpiperidone oxide (TMPO), triethyl phosphate (TEPO), they are more satisfactory light triggers, there is very high space charge force, absorption is had to long wave near ultraviolet ray, be applicable to whitewash and the thicker situation of film, and there is good stability, can not variable color or fade.
Carry Hydrogen initator: carry Hydrogen initator and mainly contain benzophenone and thioxanthones.Wherein thioxanthone photoinitiator is at the maximum absorption wavelength in black light district at 380-420nm, and absorbability and hydrogen-taking capacity are strong, have higher efficiency of initiation.Carry Hydrogen initator and must have hydrogen donor as collaborative composition, otherwise efficiency of initiation is too low, so that application can not be put to.Triplet state carbonyl free radical more likely extracts hydrogen than on secondary carbon or on methyl from the tertiary carbon of hydrogen donor molecule, and the hydrogen be connected on oxygen or nitrogen heteroatom more easily extracts than the hydrogen on carbon atom.This kind of hydrogen donor has amine, hydramine (triethanolamine, methyl diethanolamine, triisopropanolamine), mercaptan, N, N-diethyl-to dimethylamino benzamide.
Benzophenone light initiation system, benzophenone needs with alcohol, ether or amine also with vinyl monomer just can be made to carry out photopolymerization.Mainly comprise: benzophenone, thia anthraquinone, Michler's keton, dimethoxy benezene phenyl ketone (DMPA), alpha-hydroxy-2, 2 dimethyl acetophenones (1173), Alpha-hydroxy cyclohexyl-phenyl ketone (184), α-amine alkyl phenones, 2-methyl isophthalic acid (4-first coloured glaze base phenyl)-2-morpholinopropanone (MMMP), 2, 2 '-dibenzamidodiphenyl disulfide (DBMD), (4-dimethylamino phenyl)-(1-piperidyl)-ketone, isopropyl thioxanthone (ITX), (4-dimethylamino phenyl)-(4-morpholinyl)-ketone, 2-hydroxy-2-methyl-1-phenyl-1-phenyl-1-acetone, two phenoxy group benzophenone, hydroxy-2-methyl phenyl-propane-1-ketone.And mixed system, as the oxygen in glued membrane can be eliminated initiator system is coordinated to the benzophenone of the inhibition of Raolical polymerizable and tertiary ammonia; Michler's keton and benzophenone with the use of, more cheap and effectively initiator system can be obtained.
Cationic photoinitiator: aromatic sulfonium salts and salt compounded of iodine class initator have excellent high-temperature stability, also have stability, so be widely used in Cationic curing systems with epoxy resin after coordinating.This type of initator comprises: xylyl iodine hexafluorophosphate (PI810), hydroxy phenyl salt compounded of iodine (HTIB), the two detergent alkylate iodine hexafluoro antimonate of 4,4-, xylyl salt compounded of iodine, diphenyl hexafluoroarsenate salt compounded of iodine, [4-(2-hydroxyl-3-butoxy-1-propoxyl group) phenyl] the iodo-hexafluoro antimonate of benzene, [4-(is to benzoylphenylsulfanyl) benzene] phenyl-iodide hexafluorophosphate, [4-(4-benzoyl phenoxy group) benzene] phenyl-iodide hexafluorophosphate, 4-(is to benzoylphenylsulfanyl) benzene] phenyl-iodide hexafluorophosphate, 4,4 '-dimethyl diphenyl salt compounded of iodine hexafluorophosphate (IHT-PI820), 4,4 '-diacetylamino diphenyl iodine hexafluorophosphate, 37-dinitro dibenzo ring-type salt compounded of iodine and 3,7 one dinitro dibenzo ring-type bromine salt, tetrafluoro boric acid diaryl group iodized salt, 3,3 '-dinitro diphenyl salt compounded of iodine, 3,3 '-dinitro diphenyl salt compounded of iodine and several 2,2 '-two replaces (iodine, bromine, chlorine)-5,5 '-dinitrophenyl salt compounded of iodine, iodate 2-[2-(3-indolizine) vinyl]-1-methylquinoline salt, iodate 4-(2-benzoxazole)-N-picoline salt, 3-nitrobenzophenone diphenyl sulphur hexafluorophosphate, triaryl phosphine glyoxalidine salt, triaryl phosphine 1,1 '-dinaphthalene glyoxalidine ring salt, 3,7-dinitro dibenzo bromine five rings salt, p-methyl benzenesulfonic acid triphenyl sulfosalt, bromination triphenyl sulfosalt, (4-Phenylsulfanyl-phenyl) diphenyl sulphur hexafluorophosphate, 4-(thiophenyl) triphenyl sulphur hexafluorophosphate, 3,3 '-dinitro diphenyl iodine hexafluorophosphate, 3-nitrobenzophenone diphenyl sulphur hexafluorophosphate, triphenyl sulfosalt, 4-chlorphenyl diphenyl sulphur hexafluorophosphate, 3-nitrobenzophenone diphenyl sulphur hexafluorophosphate, 4-acetamidophenyl diphenyl sulphur hexafluorophosphate, 3-benzoylphenyl diphenyl sulphur hexafluorophosphate, triphenyl sulphur borofluoride, triphenyl sulphur hexafluorophosphate, triphenyl sulphur hexafluoro antimonate, 4-tolyl diphenyl sulphur hexafluorophosphate, phosphorus hexafluoride triaryl sulfonium salts, antimony hexafluoride triaryl sulfonium salts, [4-(is to benzoylphenylsulfanyl) benzene] phenyl-iodide hexafluorophosphate, 1-(4 '-bromo-2 '-luorobenzyl) pyridiniujm, [4-(is to benzoylphenylsulfanyl) benzene] phenyl-iodide hexafluorophosphate, 4-[4-(p-nitrophenyl formoxyl) thiophenyl] benzene } phenyl-iodide hexafluorophosphate, 4-[4-(is to methyl benzoyl) thiophenyl] benzene } phenyl-iodide hexafluorophosphate, 4-[4-(is to methyl benzoyl) phenoxy group] benzene } phenyl-iodide hexafluorophosphate, [4-(is to benzoyl phenoxy group) benzene] phenyl-iodide hexafluorophosphate, the two detergent alkylate iodine hexafluoro antimonate of 4,4-.
Luxuriant molysite class: luxuriant molysite class light initiation system is the new cation light initiator of one developed after two aromatic iodonium salt and three aromatic sulfonium salts, mainly comprises: cyclopentadienyl group-iron-benzene salt, cyclopentadienyl group-iron-toluene salt, cyclopentadienyl group-iron-paraxylene salt, cyclopentadienyl group-iron-naphthalene salts, cyclopentadienyl group-iron-biphenyl salt, cyclopentadienyl group-iron-2,4-dimethyl acetophenone salt, acetyl group-cyclopentadienyl group-iron-paraxylene salt, cyclopentadienyl group-iron-methyl phenyl ethers anisole salt, cyclopentadienyl group-iron-diphenyl ether salt, cyclopentadienyl group-iron-2,4-diethoxybenzene salt, ferrocene tetrafluoroborate, the luxuriant iron tetrafluoroborate of toluene, cyclopentadienyl group-iron-methyl phenyl ethers anisole salt, cyclopentadienyl group-iron-diphenyl ether salt, cyclopentadienyl group-iron-Isosorbide-5-Nitrae-diethoxybenzene salt, cyclopentadienyl group-iron-chlorobenzene salt, cyclopentadienyl group-iron-(Isosorbide-5-Nitrae-diethoxybenzene) hexafluorophosphate, cyclopentadienyl group-iron-diphenyl ether hexafluorophosphate, 1,10-phenanthrolene ferrous perchlorate salt, 1,10-phenanthrolene ferrous sulfate cyclopentadienyl group-iron-methyl phenyl ethers anisole salt, cyclopentadienyl group-iron-diphenyl ether salt, [1,1 '-bis-(diphenylphosphine) ferrocene] Nickel Chloride, vinyl ferrocene, N, N '-di-ferrocene methylene butanediamine quaternary ammonium salt, ferrocene formamide, ferrocene acyl propionic acid, ferrocenyl methyl ketone, ethyl dicyclopentadienyl iron, Butyrylferrocene, butyl ferrocene, N, N-dimethyl-amine methyl ferrocene, 1,1 '-dibenzoyl ferrocene, (3-carboxyl propionyl group) ferrocene, 1,1 '-dibromof errocene, Aminoferrocene.
Ultraviolet light polymerization-heat cured system: find that the mechanical performance of heat treatment Post RDBMS product is significantly improved, and along with the increase of epoxy component, hybrid systems has good adhesion property on metal substrate, this is owing to shrinking little cause when epoxy compounds solidifies on the one hand, is the internal stress owing to producing when eliminating radical UV curing during hot curing on the other hand.According to base board for flexible optoelectronic part provided by the present invention, it is characterized in that, the thermal curing agents in described hot curing mode comprises: epoxy resin, isocyanates, amino resins class and free radical thermal curing agents.
Epoxy resin comprises: aliphat amine, aromatic amine, dicyandiamide class, imidazoles, organic acid anhydride class, organic hydrazides class, lewis acid amine and microcapsules class.
Aliphat amine comprises: ethylenediamine, hexamethylene diamine, diethylenetriamine, triethylene tetramine, ethoxy diethylenetriamine, hydroxyl isopropyl diethylenetriamine, poly-ethanedioic acid adipamide, diethanol amine, tetramethylethylenediamine, Diammonium Glycyrrhizinate, N-(2-ethoxy) ethylenediamine, two (4-amido phenoxy group)-phenylphosphine oxide, two (3-aminocarbonyl phenyl) phenylphosphine oxide, tetrapropyleneglycol diamines, N-hydroxyethyl-ethylenediamine, methyl ring pentanediamine, polyetheramine, pnenolic aldehyde amine hardener (T-31), AEEA, IPD, the Meng alkane diamines, diformazan ammonia propylamine, two (4-amino-3-methylcyclohexyl) methane, 4-methyl-diaminopropane, amine epoxy curing agent modified (593), fatty amines epoxy hardener (3380, TG-03, LX-502, D230), fatty amine modification addition product (HB-206, HB-205, HB-2512, HB-9305, HB-9409).
Dicyandiamide class comprises: dicyandiamide, 3, the cyanoguanidine derivative (HT2833, HT2844) of 5 disubstituted benzenes amine modifications, dicyandiamide (MD02 reacts obtained by expoxy propane and dicyandiamide), modified dicyandiamine derivative (AEHD-610, AEHD-210) and the derivative containing following molecular formula.
Aromatic amine comprises: two amido diphenyl sulfones (DDS), two aminodiphenylmethane (DDM), m-phenylene diamine (MPD) (mPDA), 8 naphthylenediamines, diethyl toluene diamine, o-phenylenediamine, p-phenylenediamine (PPD), pi-allyl aromatic diamines, N-(aminopropyl)-toluenediamine, IPD, dimethylethanolamine, dimethyl Bian amine, triethylbenzyl ammonium chloride, benzyl-dimethylamine, N-benzyl dimethylamine, 2, 4, 6,-three-(dimethylamino methyl)-phenol, phenol formaldehyde (PF) hexamethylene diamine, N, N-dimethyl benzylamine (BDMA), N-is to carboxyl phenyl succinimide (p-CPMD).
Imidazoles comprises: 1-methylimidazole, 2-ethyl imidazol(e), 2-phenylimidazole, glyoxal ethyline, 1-8-amino-ethyl-glyoxal ethyline (AMz), 2-undecyl imidazole hexanedioic acid disalt, 2-ethyl imidazol(e), 2-ethyl-4-methylimidazole (2E4Mz), 1-(2-amino-ethyl)-glyoxal ethyline, 1-cyano group-2-ethyl-4-methylimidazole, 2-heptadecyl imidazole, 2-ethyl-4-methylimidazole-carboxyl, 3-dihydroxymethyl substituted ramification of imidazole, 1, the chloride of 3-diphenyl-glyoxal ethyline, 1-decyl-2-ethyl imidazol(e), modified imidazole (JH-0511, JH-0512, JH-0521).
Organic acid anhydride class comprises: epoxidized polybutadiene/acid anhydrides, maleic anhydride, 70# acid anhydrides (being synthesized by butadiene and maleic anhydride), 647# acid anhydrides (being synthesized by dicyclopentadiene and maleic anhydride), 308 tung oil acid anhydrides are (by tung oil-modified maleic anhydride, MNA (MNA) synthesizes), pyromellitic acid anhydride (PMTA) (pyromellitic acid anhydride mixes with maleic anhydride), methyl hexahydrophthalic anhydride (MeHHPA), oxydiphthalic, phthalic anhydride (PA), hexahydrophthalic anhydride (HHPA), tetrahydrochysene phthalate anhydride (THPA), methyl tetrahydrochysene phthalate anhydride, epoxidized polybutadiene/acid anhydrides, trimellitic anhydride (TMA), tetrabromo-benzene dicarboxylic acid anhydride, poly-acetic anhydride in the ninth of the ten Heavenly Stems (PAPA).
Organic hydrazides class comprises: sebacic dihydrazide (SDH), adipic dihydrazide, carbon acid dihydrazide, careless acid dihydrazide, succinic acid hydrazide ii, adipic dihydrazide, N-amino polyacrylamide, N (CH 2cH 2cONHNH 2) 3, (H 2nHNCOCH 2cH 2) 2nCH 2cH 2n (CHCHCONHNH 2) 2, butanedioic acid hydrazides, decanedioic acid hydrazides, M-phthalic acid hydrazides, to Para Hydroxy Benzoic Acid hydrazides (POBH), azelaic acid two hydrazides, isophthalic dihydrazide.
Lewis acid amine is by BF 3, AlCl 3, ZnCl 2, PF 5lewis acid and primary amine or secondary amine form complex compound and form, comprising: cyclopentadienyl group isopropylbenzene iron hexafluorophosphate (Irgacure261), boron trifluoride, ferrocene tetrafluoroborate.
Microcapsules class comprises: cellulose, gelatin, polyvinyl alcohol, polyester, polysulfones.
Isocyanates comprises: triallyl cyanurate, toluene di-isocyanate(TDI) (TDI), '-diphenylmethane diisocyanate (MDI), poly methylene poly phenyl poly isocyanate (PAPI), hexamethylene diisocyanate (HDI), IPDI (IPDI), trimethyl hexamethylene diisocyanate (TMDI), dicyclohexyl methyl hydride diisocyanate (HMDI), XDI (XDI), tetramethylxylylene diisocyanate (TMXDI), methyl styrene isocyanates (TMI), hexahydrotoluene vulcabond (HTDI), acrylonitrile-butadiene rubber, Heptad isocyanate, triphenyl first-4, 4 ', 4 '-triisocyanate, tri o cresyl thiophosphate (4-NCO phenyl ester), tetraisocyanate, Heptad isocyanate, biuret polyisocyanate, tetrahydrofuran polyether polyalcohol-epoxy resin-isocyanates, trihydroxy polyoxypropylene polyol-isocyanates.
Amino resins comprises: diaminodiphenyl-methane (DDM), N-is to chlorophenyl-N-N-dimethyl urea, 3-phenyl-1, 1-dimethyl urea, 3-rubigan-1, 1-dimethyl urea, 4, 4 '-diamino-diphenyl bis-phenol, polyurethanes, Lauxite, epoxy-ethylenediamine carbamate, N, N, N ', N '-four propargyl-4, 4 '-diaminourea-diphenyl-methane (TPDDM), 2, 4, 6-tri-(dimethylamino methyl) phenol, 2, 4-diaminotoluene, 4, 6-tri-(dimethylamino methyl) phenol, polyurethane, methyl-etherified Lauxite, three (3-aminopropyl) amine, 2-amino-ethyl-two (3-aminopropyl) amine, N, N, N ', N '-four (3-aminopropyl) ethylenediamine, 1-[two (3-aminopropyl) is amino]-2-propyl alcohol, N-(2-amino-ethyl)-N-(3-aminopropyl) amine, 1-[(2-amino-ethyl)-(3-aminopropyl) is amino]-1-ethanol, 1-[(2-amino-ethyl)-(3-aminopropyl) is amino]-2-propyl alcohol, 3-dimethylaminopropylamine, 4,4 '-MDA (DDM), 4,4 '-diamino-diphenyl bis-phenol, 4,4 '-diamino-diphenyl sulfone (DDS), three (3-aminopropyl) amine, melmac, benzoguanamine resin, hexamethylol melamine resin, methyl-etherified melmac, methyl-etherified benzoguanamine resin, methyl-etherified urea melamine condensation copolymerization resin, hexamethoxymethyl melamine resin (TMMM), carbinol-modified trimethylol melamine, urea-melamine resin, polyester melamine, 2-secondary butyl phenenyl-N-methylamino acid esters, DCCA ester, TCCA ester, aminotriazine resins, urethane acrylate, 4-aminopyridine resin, N-β-aminoethyl amino mylar, α-aminopyridine resin, aminodiphenylether resin, amino silicones, phosphoramidic-resin, maleopimaric acid polyester amino resin, piperazine aminodithioformic acid type chelating resin, hydroxyethylamino mylar.
Free radical thermal curing agents comprises: cumyl peroxide, acrylic acid epoxy monoesters, the tertiary fourth fat of benzoic acid, urethane acrylate, polyurethane diol, polyester triol, two (hexafluorophosphoric acid ester), polymethyl methacrylate (PMMA), cinnamic acrylic ester, polybutadiene type crylic acid hydroxy ester, polyester urethane acrylate, acrylic acid epoxy monoesters, butadiene-methyl methacrylate-benzene diene copolymers, butadiene-methyl methacrylate, ethylene-acrylate, polyacrylate, chlorination polypropylene-acrylate, polymethyl methacrylate, polyethyl methacrylate, cyanoacrylate, 2-acrylic acid-1,2-PD monoesters, methyl methacrylate, EMA, butyl methacrylate, hydroxyethyl methacrylate, isobutyl methacrylate, isobutyl methacrylate, EHMA, methacrylic acid 2 methylamino ethyl ester, methyl acrylate, ethyl acrylate, butyl acrylate, acrylic acid 2 hydroxy propyl ester, hydroxy-ethyl acrylate, Isooctyl acrylate monomer, vinyl acetate-acrylic butyl ester, polymethyl methacrylate.
Ultraviolet light polymerization-microwave curing system: the microwave curing agent in microwave curing mode is identical with the thermal curing agents in hot curing mode.Its technical characterstic uses the mode of microwave curing that thermal curing agents is solidified.Microwave is because of " in molecule " uniform heating pattern of uniqueness, make that resin solidification is even, speed is fast, be easy to control, save the energy, equipment investment is few, microwave replaces the research of hot curing in thermosetting resin and composite material solidification thereof more and more to come into one's own in recent years.
Ultraviolet light polymerization-anaerobic curing system: the anaerobic curing agent in anaerobic curing system comprises: methacrylate tetraethylene-glycol ester, methacrylate multicondensed ethylene glycol ester (as the U.S. happy safe 290 and mix with fumaric acid bisphenol-A unsaturated polyester (UP) happy safe 271, happy safe 277), triethylene Glycol double methyl methacrylate, ethyleneglycol dimethyacrylate, hydroxyethyl methacrylate or hydroxypropyl acrylate are (as domestic anchor 302, the triple bond 1030 of Japan), bisphenol-A epoxy ester is (as domestic Y-150, GY-340 is the mixture of epoxy-ester and multicondensed ethylene glycol ester), the product of hydroxyethyl methacrylate alkyl phenol and polyalcohol is (as happy safe 372 of the U.S., domestic GY-168, anchor 352 and BN-601), polyurethane, the different hydrogen acid ether (hydrogen acid ester) of polyurethane, hydroxy propyl methacrylate, hydroxy propyl methacrylate-polyethers, hydroxy polybutadiene type polyurethane, polyurethane-acrylate, hydroxypropyl acrylate (HPA), glycol methacrylate, cumyl hydroperoxide, acrylic acid o-cresol formaldehyde epoxy-ester, methoxylated polyethylene glycol methacrylate, phthalic acid Triethylene Glycol, β-hydroxyethyl methacry-late, trimethylol-propane trimethacrylate, triethylene Glycol double methyl methacrylate, multicondensed ethylene glycol double methyl methacrylate, Dimethacryloylethylthioether, phthalic acid two (diethylene glycol (DEG) acrylate), Ethoxylated bisphenol A dimethylacrylate, dimethacrylate bisphenol-A ethylene glycol fat, second diester methacrylate, triethlene glycol bismethylacrylate, glycol methacrylate, one diethyl acetal double methyl methacrylate, phthalic anhydride diglycol ethylene double methyl methacrylate, epoxy resin (methyl) acrylate, methacrylate diglycol ester, double methyl methacrylate triethylene glycol ester, propenoic methyl carbamate, a-Methyl 2-cyanoacrylate, a-cyanacrylate, glycidyl methacrylate, polyethylene glycol dimethacrylate, TEGDMA, methacrylic acid dicyclopentadiene-oxygen-ethyl ester, methyl-prop dimethylaminoethyl acrylate.
Ultraviolet light polymerization-electronic beam curing system: the electronic beam curing agent in electronic beam curing mode comprises: triphenol methylmethane tetraglycidel ether epoxy resin, bicyclopentadiene bisphenol-type epoxy resin, bisphenol A-type vinyl ester resin (V-411), epoxy vinyl ester resin (V-901), Epocryl (BRT2000), maleimide resin, 4,4 '-diphenyl methane dimaleimide, bisphenol-A-Diphenyl Ether Bismaleimide, bisphenol-A maleic acid vinylite, vinyl ester resin, ethylene bromide base ester resin, fumaric acid mixed ethylene base ester resin, acrylic acid mixed ethylene base ester resin, carbamate mixed ethylene base ester resin, rubber mix vinyl ester resin, phenol formaldehyde epoxy vinyl ester resin, the hybrid epoxidized acrylate of isocyanates, toluene di-isocyanate(TDI) mixing acrylic acid-hydroxyl ethyl ester, methylolation bisphenol-type epoxy resin, bisphenol A acrylates, urethane acrylate, bisphenol-A epoxide vinylester resin, bisphenol A benzoxazine-epoxy resin, bisphenol fluorene epoxy resin, bisphenol-a epoxy acrylate resin, bisphenol A diglycidyl ether, bisphenol-A epoxy chloropropene acid ester resin.
Below specific embodiments of the invention:
Embodiment 1:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 1:1000; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is free radical type ultraviolet light polymerization-heat cured system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.39 μ A, mobility (μ)=0.009cm 2it is 4230 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 42% and 35%.
Embodiment 2:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 1:1000; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is free radical type ultraviolet light polymerization-heat cured system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.36 μ A, mobility (μ)=0.008cm 2it is 4120 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 43% and 36%.
Embodiment 3:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 3:1000; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is free radical type ultraviolet light polymerization-microwave curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.92 μ A, mobility (μ)=0.016cm 2it is 4450 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 35% and 32%.
Embodiment 4:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 3:1000; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is free radical type ultraviolet light polymerization-microwave curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.90 μ A, mobility (μ)=0.014cm 2it is 4350 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 36% and 33%.
Embodiment 5:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 5:1000; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is free radical type ultraviolet light polymerization-anaerobic curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=2.34 μ A, mobility (μ)=0.025cm 2it is 5010 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 31% and 28%.
Embodiment 6:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 5:1000; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is free radical type ultraviolet light polymerization-anaerobic curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=2.31 μ A, mobility (μ)=0.022cm 2it is 4980 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 32% and 29%.
Embodiment 7:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; Gate insulator revolves the organic semiconductor layer (30nm) that dual system solidification glue: P3HT is 7:1000; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is free radical type ultraviolet light polymerization-electronic beam curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.76 μ A, mobility (μ)=0.020cm 2it is 4650 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 26% and 25%.
Embodiment 8:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 7:1000; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is free radical type ultraviolet light polymerization-electronic beam curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.74 μ A, mobility (μ)=0.019cm 2it is 4600 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 27% and 26%.
Embodiment 9:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 9:1000; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is cation type ultraviolet photo-curing-heat cured system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.31 μ A, mobility (μ)=0.013cm 2it is 4210 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 24% and 23%.
Embodiment 10:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 9:1000; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is cation type ultraviolet photo-curing-heat cured system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.30 μ A, mobility (μ)=0.012cm 2it is 4110 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 25% and 24%.
Embodiment 11:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 1:100; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is cation type ultraviolet photo-curing-microwave curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.16 μ A, mobility (μ)=0.008cm 2it is 3980 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 22% and 21%.
Embodiment 12:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 1:100; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is cation type ultraviolet photo-curing-microwave curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.14 μ A, mobility (μ)=0.007cm 2it is 3880 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 23% and 22%.
Embodiment 13:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 1:100; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is cation type ultraviolet photo-curing-anaerobic curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.15 μ A, mobility (μ)=0.007cm 2it is 3890 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 23% and 23%.
Embodiment 14:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 1:100; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is cation type ultraviolet photo-curing-anaerobic curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.16 μ A, mobility (μ)=0.008cm 2it is 3780 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 24% and 22%.
Embodiment 15:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 1:100; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is cation type ultraviolet photo-curing-electronic beam curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.15 μ A, mobility (μ)=0.007cm 2it is 3890 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 23% and 24%.
Embodiment 16:
The substrate be made up of transparent substrates and electrically conducting transparent ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; At transparent conductive cathode ITO surface rotary coating 100nmPS gate insulator, and formed film is dried; On gate insulator, spin coating dual system solidification glue: P3HT is the organic semiconductor layer (30nm) of 1:100; Described dual UV curable paint by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.Described dual UV curable paint is cation type ultraviolet photo-curing-anaerobic curing system, and raw material comprises following component:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing; Thermal evaporation gold source electrode and drain electrode (10nm) on organic semiconductor layer.Record the saturation current (I of device sD)=1.16 μ A, mobility (μ)=0.007cm 2it is 3790 units that/Vs, XRD record P3HT degree of crystallinity, test I after 30 days sDand V tHattenuation rate be respectively 24% and 22%.
Table 1: the device parameter performance table adding the dual system solidification glue of different proportion

Claims (9)

1. an organic field effect tube, its structure comprises substrate, gate electrode, gate insulator, organic semiconductor layer, source electrode and drain electrode, it is characterized in that, described organic semiconductor layer adds the dual system solidification glue having percentage by weight 0.1% ~ 1%, described dual system solidification glue by two independently cure stage complete, one of them stage is reacted by ultraviolet light polymerization, and another stage is dark reaction.
2. a kind of organic field effect tube according to claim 1, it is characterized in that, the dual UV curable paint of dual system solidification glue comprises ultraviolet light polymerization-heat cured system, ultraviolet light polymerization-microwave curing system, ultraviolet light polymerization-anaerobic curing system or ultraviolet light polymerization-electronic beam curing system.
3. organic field effect tube according to claim 1, is characterized in that, described dual UV curable paint is 1. following ~ any one 8. in system:
1. free radical type ultraviolet light polymerization-heat cured system, raw material comprises the component of following weight portion:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing;
2. free radical type ultraviolet light polymerization-microwave curing system, raw material comprises the component of following weight portion:
Solidification process is: first carry out ultraviolet light polymerization, then carries out microwave curing, then carries out ultraviolet light polymerization; Or first carry out microwave curing, then carry out ultraviolet light polymerization, then heat or microwave curing;
3. free radical type ultraviolet light polymerization-anaerobic curing system, raw material comprises the component of following weight portion:
Solidification process is: first carry out ultraviolet light polymerization, is not then subject to illumination and adhesive segment under being in anoxia condition can carry out anaerobic curing reaction automatically, then carries out ultraviolet light polymerization;
4. free radical type ultraviolet light polymerization-electronic beam curing system, raw material comprises the component of following weight portion:
Solidification process is: first carry out ultraviolet light polymerization, then carries out electronic beam curing under vacuo, then carries out ultraviolet light polymerization;
5. cation type ultraviolet photo-curing-heat cured system, raw material comprises the component of following weight portion:
Solidification process is: first carry out ultraviolet light polymerization, be then heating and curing, then carries out ultraviolet light polymerization; Or be first heating and curing, then carry out ultraviolet light polymerization, then be heating and curing;
6. cation type ultraviolet photo-curing-microwave curing system, raw material comprises the component of following weight portion:
Solidification process is: first carry out ultraviolet light polymerization, then carries out microwave curing, then carries out ultraviolet light polymerization; Or first carry out microwave curing, then carry out ultraviolet light polymerization, then heat or microwave curing;
7. cation type ultraviolet photo-curing-anaerobic curing system, raw material comprises the component of following weight portion:
Solidification process is: first carry out ultraviolet light polymerization, is not then subject to illumination and adhesive segment under being in anoxia condition can carry out anaerobic curing reaction automatically, then carries out ultraviolet light polymerization;
8. cation type ultraviolet photo-curing-electronic beam curing system, raw material comprises the component of following weight portion:
Solidification process is: first carry out ultraviolet light polymerization, then carries out electronic beam curing under vacuo, then carries out ultraviolet light polymerization.
4. a kind of organic field effect tube according to claim 3, is characterized in that, described 1. 2. 5. 6. in system, free radical thermal curing agents comprises: ethylenediamine, hexamethylene diamine, triethylene tetramine, ethoxy diethylenetriamine, hydroxyl isopropyl diethylenetriamine, poly-ethanedioic acid adipamide, diformazan ammonia propylamine, 4-methyl-diaminopropane, dicyandiamide, two amido diphenyl sulfones, two aminodiphenylmethane, m-phenylene diamine (MPD), diethyl toluene diamine, N-(aminopropyl)-toluenediamine, dimethylethanolamine, dimethyl Bian amine, triethylbenzyl ammonium chloride, benzyl-dimethylamine, N-benzyl dimethylamine, 2,4,6 ,-three-(dimethylamino methyl)-phenol, phenol formaldehyde (PF) hexamethylene diamine, N, N-dimethyl benzylamine, 2-ethyl imidazol(e), 2-phenylimidazole, glyoxal ethyline, 2-ethyl imidazol(e), 2-ethyl-4-methylimidazole, 1-(2-amino-ethyl)-glyoxal ethyline, maleic anhydride, oxydiphthalic, phthalic anhydride, trimellitic anhydride, tetrabromo-benzene dicarboxylic acid anhydride, gather acetic anhydride in the ninth of the ten Heavenly Stems, sebacic dihydrazide, adipic dihydrazide, carbon acid dihydrazide, grass acid dihydrazide, succinic acid hydrazide ii, adipic dihydrazide, the amino polyacrylamide of N-, decanedioic acid hydrazides, M-phthalic acid hydrazides, to Para Hydroxy Benzoic Acid hydrazides, azelaic acid two hydrazides, isophthalic dihydrazide, ferrocene tetrafluoroborate, triallyl cyanurate, toluene di-isocyanate(TDI), '-diphenylmethane diisocyanate, hexamethylene diisocyanate, trimethyl hexamethylene diisocyanate, dicyclohexyl methyl hydride diisocyanate, XDI, tetramethylxylylene diisocyanate, methyl styrene isocyanates, hexahydrotoluene vulcabond, triphenyl first-4,4', 4'-triisocyanate, diaminodiphenyl-methane, N-is to chlorophenyl-N-N-dimethyl urea, 3-phenyl-1,1-dimethyl urea, 3-rubigan-1,1-dimethyl urea, 4,4 '-diamino-diphenyl bis-phenol, polyurethanes, Lauxite, epoxy-ethylenediamine carbamate, 2,4,6-tri-(dimethylamino methyl) phenol, 2,4-diaminotoluene, polyurethane, methyl-etherified Lauxite, three (3-aminopropyl) amine, 2-amino-ethyl-two (3-aminopropyl) amine, 4,4 '-MDA, 4,4 '-diamino-diphenyl bis-phenol, 4,4 '-diamino-diphenyl sulfone, three (3-aminopropyl) amine, melmac, benzoguanamine resin, hexamethylol melamine resin, hexamethoxymethyl melamine resin, urea-melamine resin, polyester melamine, TCCA ester, aminotriazine resins, urethane acrylate, 4-aminopyridine resin, N-β-aminoethyl amino mylar, α-aminopyridine resin, aminodiphenylether resin, phosphoramidic-resin, hydroxyethylamino mylar, described microwave curing adhesive and hot setting adhesive use same material or different materials, described anaerobic curing adhesive comprises: methacrylate tetraethylene-glycol ester, methacrylate multicondensed ethylene glycol ester, triethylene Glycol double methyl methacrylate, ethyleneglycol dimethyacrylate, hydroxyethyl methacrylate or hydroxypropyl acrylate, methoxylated polyethylene glycol methacrylate, phthalic acid Triethylene Glycol, β-hydroxyethyl methacry-late, triethylene Glycol double methyl methacrylate, Dimethacryloylethylthioether, phthalic acid two (diethylene glycol (DEG) acrylate), Ethoxylated bisphenol A dimethylacrylate, dimethacrylate bisphenol-A ethylene glycol fat, second diester methacrylate, triethylene-glycol dimethylacrylate, triethlene glycol bismethylacrylate, glycol methacrylate, one diethyl acetal double methyl methacrylate, epoxy resin methacrylate, methacrylate diglycol ester, described electronic beam curing adhesive comprises: triphenol methylmethane tetraglycidel ether epoxy resin, bicyclopentadiene bisphenol-type epoxy resin, bisphenol A-type vinyl ester resin, epoxy vinyl ester resin, Epocryl, maleimide resin, 4, 4 '-diphenyl methane dimaleimide, bisphenol-A-Diphenyl Ether Bismaleimide, bisphenol-A maleic acid vinylite, ethylene bromide base ester resin, phenol formaldehyde epoxy vinyl ester resin, methylolation bisphenol A type epoxy resin, bisphenol A acrylates, urethane acrylate, bisphenol-A epoxide vinylester resin, bisphenol A benzoxazine-epoxy resin, bisphenol fluorene epoxy resin, bisphenol-a epoxy acrylate resin, bisphenol A diglycidyl ether or bisphenol-A epoxy chloropropene acid ester resin.
5. 1. a kind of organic field effect tube according to claim 3, is characterized in that, described ~ 4. in system, light trigger comprise styrax or and derivative; 5. described ~ 8. in system, cation light initiator comprises aromatic sulfonium salts, salt compounded of iodine or luxuriant molysite class; 1. described ~ 8. in system, sensitising agent comprises benzophenone, thia anthraquinone or Michler's keton, and auxiliary agent comprises plasticizer, thixotropic agent and filler.
6. a kind of organic field effect tube according to claim 5, it is characterized in that, described plasticizer comprises: dioctyl phthalate, dibutyl phthalate, three vinyl butyl ether base phosphates, polyvinyl butyral resin, tributyl 2-acetylcitrate, repefral, diethyl phthalate, hexanedioic acid two (Butoxyethoxy) ethyl ester, isopropyl titanate, tetrabutyl titanate, citrate, trimellitic acid (2-ethyl) own ester, phthalic acid two (2-ethyl) own ester, decanedioic acid two (2-ethyl) own ester, Diethylene Glycol Dibenzoate, phthalic anhydride, dipropylene glycol dibenzoate or chlorosulfonated polyethylene, described coupling agent comprises methylvinyldichlorosilane, methyl hydrogen dichlorosilane, dimethyldichlorosilane, chlorodimethyl silane, vinyl trichlorosilane, γ-aminopropyltrimethoxysilane, dimethyl silicone polymer, poly-hydrogen methylsiloxane, poly-methyl methoxy radical siloxane, γ-methacrylic acid third vinegar base trimethoxy silane, gamma-aminopropyl-triethoxy-silane, γ-glycidol ether propyl trimethoxy silicane, aminopropyl silsesquioxane, γ-methacryloxypropyl trimethoxy silane, chain alkyl trimethoxy silane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-chloropropyl triethoxysilane, two-(the silica-based propyl group of γ-triethoxy), anilinomethyl triethoxysilane, N-β (aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-gamma-aminopropyl-triethoxy-silane, N-β (aminoethyl)-γ-aminopropyltriethoxy dimethoxysilane, γ-(2,3-epoxy third oxygen) propyl trimethoxy silicane, γ-(methacryloxypropyl) oxypropyl trimethyl silane, γ mercaptopropyitrimethoxy silane or γ-Mercaptopropyltriethoxysilane.
7. a kind of organic field effect tube according to claim 1, it is characterized in that, described gate insulator comprises polystyrene, polymethyl methacrylate, polyvinyl alcohol, polyvinylidene fluoride, one or more organic polymer insulating material of polyimides or one or more inorganic insulating materials of silicon dioxide, alundum (Al2O3) or titanium oxide, and thickness is 100 ~ 600nm.
8. a kind of organic field effect tube according to claim 1, is characterized in that, described organic semiconducting materials comprises soluble organic semiconductor material and gathers one or more of 3-hexyl thiophene or Tips-pentacene, and thickness is 30 ~ 300nm.
9. a kind of organic field effect tube according to claim 1, it is characterized in that, described gate electrode, source electrode and leak electricity very metal material or conductive film, wherein, source electrode and drain electrode thickness are 10 ~ 300nm, described metal comprises one or more of gold, silver or copper, and described conductive film comprises one or more of tin indium oxide or zinc oxide.
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