CN103579421A - Preparation method for large-area patterning sapphire substrate - Google Patents
Preparation method for large-area patterning sapphire substrate Download PDFInfo
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- CN103579421A CN103579421A CN201310549792.3A CN201310549792A CN103579421A CN 103579421 A CN103579421 A CN 103579421A CN 201310549792 A CN201310549792 A CN 201310549792A CN 103579421 A CN103579421 A CN 103579421A
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- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 50
- 239000010980 sapphire Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000000059 patterning Methods 0.000 title claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000003292 glue Substances 0.000 claims abstract description 11
- 238000007731 hot pressing Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000007747 plating Methods 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000011159 matrix material Substances 0.000 claims description 13
- 238000004528 spin coating Methods 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 45
- 230000003670 easy-to-clean Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 229910052759 nickel Inorganic materials 0.000 abstract description 4
- 238000003825 pressing Methods 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 238000009987 spinning Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 238000009776 industrial production Methods 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a preparation method for a large-area patterning sapphire substrate. The method comprises the steps that a silicon template of a lattice structure with a certain period is prepared on monocrystalline silicon through the EBL technology; metallic nickel is plated to the surface of the silicon template in a chemical plating mode, the silicon template is separated from the metallic nickel layer, and a metallic nickel template is obtained, wherein the period of the metallic nickel template is the same as that of the silicon template, and the structure of the metallic nickel template is opposite to that of the silicon template; the surface of the processed sapphire substrate is coated with hot pressing glue in a spinning mode, hot pressing is conducted on the prepared metallic nickel template, an ICP etching pressing residual glue layer is laid, and a hot pressing glue structure is obtained; a layer of metallic nickel is deposited on the hot pressing glue structure in an electronic beam evaporation mode, and a lattice structure of nickel is obtained after lifting separation; the nickel lattice structure is used as a mask, the sapphire substrate is etched through ICP, the residual metallic mask layer is washed away, and the patterning sapphire substrate is obtained finally. The preparation method for the large-area patterning sapphire substrate is low in cost and high in yield, and the Ni template is easy to clean and can be repeatedly used during nanometer pressing.
Description
Technical field
The invention belongs to micro-nano manufacture field, be specifically related to utilize nano-imprinting method to prepare the method for large area nanopatterning Sapphire Substrate.
Background technology
Current scarcity of resources, energy shortage have become global problem, under overall situation like this, countries in the world all simultaneously start turn one's attention in the research and development preparation and industrialization of novel illumination light source.Last century, the nineties LED technology obtained great breakthrough, and LED is at large-area displays at present, and traffic lights, throws light on, and significant role is being brought into play in the aspects such as communication.Particularly illumination aspect, LED as the 4th generation light source, contrast incandescent lamp and electricity-saving lamp are having great advantage aspect energy-conservation and life-span.Can realize the energy consumption that only consumes incandescent lamp 10% in theory, than fluorescent lamp energy saving 50%, the life-span is 10 times of fluorescent lamp, 100 times of incandescent lamp.Yet due to the restriction of industrial production condition, there is the shortcoming that luminosity is not enough, luminous efficiency is not high in LED.Research shows, patterned sapphire substrate design is at present for improving a common practice of LED luminous efficiency.
Nanometer embossing is first to be proposed by Stephen Chou nineteen ninety-five, due to its high yield, high-resolution, advantage cheaply, is listed in one of integrated circuit production technology of future generation, is conducive to large-scale industrial production application.In hot nanometer embossing, nano-imprint stamp need to possess and can be repeatedly used and surface feature easy to clean.
Summary of the invention
The object of the present invention is to provide a kind of suitable method to prepare reused nano-imprint stamp, and utilize this template to carry out the method that nano impression is prepared large area pattern Sapphire Substrate, for improving LED luminous efficiency.
The technical solution used in the present invention is:
A preparation method for large area pattern Sapphire Substrate, concrete steps are as follows:
(1) prepare the metal Ni template that nano impression is used: a) on (100) silicon chip, with EBL, prepare nano-pore battle array silicon template A; B) utilize electron-beam coating equipment on silicon template A, to deposit the metal Ni that 10nm is thick; C) by step b) the silicon template A for preparing in the electroplate liquid of Ni plated metal Ni layer to desired thickness, then the metal Ni layer of electroplating is separated with silicon template A, obtain metal Ni dot matrix template B, its cycle is identical with silicon template A, but its structure is contrary with silicon template A;
(2) utilize the metal Ni template of preparation in (1) to carry out hot padding and electron beam evaporation plating, lift off technique: a) the hot padding glue of spin coating specific thicknesses in Sapphire Substrate, utilizes the metal Ni dot matrix template B obtaining in (1) to carry out hot padding; Metal Ni template surface is easy to clean, can in hot padding, repeatedly use; B) the hot pressing plastic structure that utilizes hot padding to obtain, at O
2in plasma, being etched to Sapphire Substrate exposes; C) utilize electron beam evaporation plating in the complete Sapphire Substrate surface deposition layer of metal of etching, then lift off and obtain the Sapphire Substrate that surface has metal lattice mask structure;
(3) utilize the metal lattice mask layer obtaining in (2) to carry out the etching of Sapphire Substrate: the Sapphire Substrate obtaining in (2) is used to Cl in ICP
2and BCl
3carry out etching, residual metal dot matrix mask layer is washed away, obtain the Sapphire Substrate of nano-patterning.
Use the inventive method to prepare nano-patterning Sapphire Substrate and there is following beneficial effect: (1) nano-imprinting method is prepared patterned substrate and had high yield, low cost, high-resolution advantage, be applicable to large-scale industrial production; (2) Ni template surface can be low, easy to clean, and intensity is high, can repeatedly repeat to use in hot padding; (3) utilize metal mask to carry out etching Sapphire Substrate good directionality, etching selection ratio is high.
Accompanying drawing explanation
Fig. 1 is patterned sapphire substrate preparation flow figure of the present invention, wherein, and 1-silicon substrate; 2-electron beam resist; 3-metallic nickel; 4-Sapphire Substrate; 5-hot pressing glue; 6-patterned sapphire substrate.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further detailed explanation.
(1) prepare 400nm cycle metal Ni lattice structure
A) at the PMMA of (100) silicon chip spin coating one deck 200nm left and right thickness of processing, utilize afterwards EBL exposure imaging to obtain the nano-pore battle array PMMA structure in 400nm cycle, utilize PMMA for etch mask, structure is transferred on silicon substrate, obtain silicon template A;
B) utilize electron-beam coating equipment on silicon template A, to deposit 10nm metal Ni, in Ni electroplate liquid, plated metal Ni layer to 150 micron thick, separated with template A by electroplated Ni layer, obtains metal Ni dot matrix template B, its cycle is identical with silicon template A, but its structure is contrary with silicon template A; Electroplate liquid main component is: nickelous sulfate, sodium chloride, boric acid; Electroplating time is 6h;
(2) utilize the Ni dot matrix template B of preparation in (1) to carry out hot nano impression
A) at the PMMA hot pressing glue of Sapphire Substrate surface spin coating 200nm thickness; Rotating speed 3000r/m, time 1min;
B) with the spin coating of metal Ni template B impression, impress well the Sapphire Substrate of glue, pressure is 0.6MPa, and the impression time is 5min;
C) Sapphire Substrate is separated with metal Ni template B, obtain having the Sapphire Substrate C of 400nm hole battle array PMMA structure;
(3) utilize the Sapphire Substrate C that in (2), impression obtains to prepare patterned sapphire substrate
A) etching Sapphire Substrate C in RIE etching apparatus, etching condition is: O
210sccm, RF50w, etch period 1min;
B) Sapphire Substrate obtaining in a) is placed in electron-beam coating equipment, the metal Ni of deposition 50nm thickness lifts off in chlorobenzene solvent, obtains 50nm high, the metal Ni dot matrix mask in 400nm cycle;
C) by b) Sapphire Substrate etching 5min in ICP, etching condition is: Cl
230sccm, BCl
310sccm, ICP300wbias RF180w; At HNO
3middle metal Ni mask is removed.
(4) prepare 600nm cycle metal Ni lattice structure
A) at the PMMA of (100) silicon chip spin coating one deck 200nm left and right thickness of processing, utilize afterwards EBL exposure imaging to obtain the nano-pore battle array PMMA structure in 600nm cycle, utilize PMMA for etch mask, structure is transferred on silicon substrate to silicon template D;
B) utilize electron-beam coating equipment on silicon template D, to deposit 10nm metal Ni, in Ni electroplate liquid, plated metal Ni layer to 150 micron thick, separated with template D by electroplated Ni layer, obtains metal Ni dot matrix template E, and the cycle is identical with template D, inverted configuration; Electroplate liquid main component is: nickelous sulfate, sodium chloride, boric acid; Electroplating time is 6h;
(5) utilize the Ni dot matrix template E of preparation in (4) to carry out hot nano impression
A) at the PMMA hot pressing glue of Sapphire Substrate surface spin coating 200nm thickness; ; Rotating speed 3000r/m, time 1min;
B) with the spin coating of metal Ni template E impression, impress well the Sapphire Substrate of glue, pressure is 0.6MPa, and the impression time is 5min;
C) Sapphire Substrate is separated with metal Ni dot matrix template E, obtain having the Sapphire Substrate F of 600nm hole battle array PMMA structure;
(6) utilize the Sapphire Substrate F that in (5), impression obtains to prepare patterned sapphire substrate
A) etching Sapphire Substrate F in RIE etching apparatus, etching condition is: O
210sccm, RF50w, etch period 1min;
B) Sapphire Substrate obtaining in a) is placed in electron-beam coating equipment, the metal Ni of deposition 50nm thickness lifts off in chlorobenzene solvent, obtains 50nm high, the metal Ni dot matrix mask in 600nm cycle;
C) by b) Sapphire Substrate etching 5min in ICP, etching condition is: Cl
230sccm, BCl
310sccm, ICP300wbias RF180w; In HNO3, metal Ni mask is removed.
Claims (2)
1. a preparation method for large area pattern Sapphire Substrate, is characterized in that, concrete steps are as follows:
(1) prepare the metal Ni template that nano impression is used
A) on (100) silicon chip, with EBL, prepare nano-pore battle array silicon template A;
B) utilize electron-beam coating equipment on silicon template A, to deposit the metal Ni that 10nm is thick;
C) by step b) the silicon template A for preparing in the electroplate liquid of Ni plated metal Ni layer to desired thickness, then the metal Ni layer of electroplating is separated with silicon template A, obtain metal Ni dot matrix template B, its cycle is identical with silicon template A, but its structure is contrary with silicon template A;
(2) utilize the metal Ni template of preparation in (1) to carry out hot padding and electron beam evaporation plating, lift off technique
A) the hot padding glue of spin coating specific thicknesses in Sapphire Substrate, utilizes the metal Ni dot matrix template B obtaining in (1) to carry out hot padding;
B) the hot pressing plastic structure that utilizes hot padding to obtain, at O
2in plasma, being etched to Sapphire Substrate exposes;
C) utilize electron beam evaporation plating in the complete Sapphire Substrate surface deposition layer of metal of etching, then lift off and obtain the Sapphire Substrate that surface has metal lattice mask structure;
(3) utilize the metal lattice mask layer obtaining in (2) to carry out the etching of Sapphire Substrate
The Sapphire Substrate obtaining in (2) is used to Cl in ICP
2and BCl
3carry out etching, residual metal dot matrix mask layer is washed away, obtain the Sapphire Substrate of nano-patterning.
2. the preparation method of a kind of large area pattern Sapphire Substrate according to claim 1, is characterized in that, described (1) step c) in, the thickness of plated metal Ni layer is 100-300 micron.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310549792.3A CN103579421A (en) | 2013-11-07 | 2013-11-07 | Preparation method for large-area patterning sapphire substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310549792.3A CN103579421A (en) | 2013-11-07 | 2013-11-07 | Preparation method for large-area patterning sapphire substrate |
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| CN103579421A true CN103579421A (en) | 2014-02-12 |
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| CN201310549792.3A Pending CN103579421A (en) | 2013-11-07 | 2013-11-07 | Preparation method for large-area patterning sapphire substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783551A (en) * | 2017-01-19 | 2017-05-31 | 北京科技大学 | A kind of method of the alternate GaN structures of growth polarity in N polar GaN templates |
| CN107522163A (en) * | 2016-09-26 | 2017-12-29 | 西北工业大学 | A kind of high guarantor's type transfer method of PDMS structures |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1786744A (en) * | 2004-12-11 | 2006-06-14 | 鸿富锦精密工业（深圳）有限公司 | Method for mfg. light conducting plate |
| CN101114120A (en) * | 2006-07-25 | 2008-01-30 | 三星电子株式会社 | A stamper and production method thereof and imprinting process of substrate using the stamper |
| CN101181836A (en) * | 2007-12-13 | 2008-05-21 | 复旦大学 | Method for copying nano imprint template |
| WO2013111631A1 (en) * | 2012-01-23 | 2013-08-01 | 旭硝子株式会社 | Blank for nanoimprint mold, nanoimprint mold, and methods for producing said blank and said nanoimprint mold |
-
2013
- 2013-11-07 CN CN201310549792.3A patent/CN103579421A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1786744A (en) * | 2004-12-11 | 2006-06-14 | 鸿富锦精密工业（深圳）有限公司 | Method for mfg. light conducting plate |
| CN101114120A (en) * | 2006-07-25 | 2008-01-30 | 三星电子株式会社 | A stamper and production method thereof and imprinting process of substrate using the stamper |
| CN101181836A (en) * | 2007-12-13 | 2008-05-21 | 复旦大学 | Method for copying nano imprint template |
| WO2013111631A1 (en) * | 2012-01-23 | 2013-08-01 | 旭硝子株式会社 | Blank for nanoimprint mold, nanoimprint mold, and methods for producing said blank and said nanoimprint mold |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107522163A (en) * | 2016-09-26 | 2017-12-29 | 西北工业大学 | A kind of high guarantor's type transfer method of PDMS structures |
| CN106783551A (en) * | 2017-01-19 | 2017-05-31 | 北京科技大学 | A kind of method of the alternate GaN structures of growth polarity in N polar GaN templates |
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Application publication date: 20140212 |