CN103579354B - Thin film transistor base plate and the display device for possessing thin film transistor base plate - Google Patents
Thin film transistor base plate and the display device for possessing thin film transistor base plate Download PDFInfo
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Abstract
The present invention provides a kind of thin film transistor base plate and possesses the display device of thin film transistor base plate, the thin film transistor base plate, including a substrate, a grid, a gate dielectric, a channel layer, a source electrode, a drain electrode and a light shield layer.Grid is arranged at substrate.Gate dielectric is arranged on grid and substrate.Channel layer is arranged on gate dielectric.Source electrode is arranged on channel layer with drain electrode and contacted with channel layer, and has an interval between drain electrode and source electrode.Light shield layer masking interval.Channel layer includes monoxide semiconductor.
Description
Technical field
The present invention is on a kind of thin film transistor base plate and possesses the display device of thin film transistor base plate.
Background technology
With the development of science and technology display device is widely used in various fields, especially liquid crystal display device,
Because having that build is frivolous, low power consumption and the advantageous characteristic such as radiationless, gradually substitution conventional cathode ray tube is shown
Device, and apply into the electronic product of numerous species, such as mobile phone, portable multimedia device, notebook computer, liquid
Brilliant TV and liquid crystal screen display etc..
For liquid crystal display device, known polycrystalline SiTFT has about 100cm2/Vs or so mobility,
But it must be manufactured at a temperature of more than 450 DEG C, thus be only capable of being formed on the substrate of high-fire resistance, and be not suitable for answering
Substrate for large area or pliability.Although in addition, known amorphous silicon film transistor can be with relatively low temperature, about 300
DEG C, manufactured, but because such a amorphous silicon film transistor only has about 1cm2/ Vs or so mobility, thus can not fit
Panel for high-fineness.
In this regard, there is dealer to propose with metal-oxide semiconductor (MOS), e.g. noncrystalline indium gallium zinc（amorphous
Indium gallium zinc oxide, a-IGZO）, it is used as the channel layer of thin film transistor (TFT)（channel layer）.Although,
Noncrystalline indium gallium zinc thin film transistor (TFT) has the advantages that the mobility better than amorphous silicon film transistor, and it is in technique
Also the technique compared with polycrystalline SiTFT is simple, but due to noncrystalline indium gallium zinc for light, water and oxygen all very
It is sensitive.
Therefore, how to provide a kind of thin film transistor base plate and possess the display device of thin film transistor base plate, can
The irradiation of enough effectively isolation light, to lift the stability of thin film transistor (TFT), and can improve aperture opening ratio, it has also become important simultaneously
One of problem.
The content of the invention
In view of above-mentioned problem, the purpose of the present invention for provide it is a kind of can effectively completely cut off the irradiation of light, it is thin to be lifted
The stability of film transistor, and the thin film transistor base plate of aperture opening ratio can be improved simultaneously and possess the aobvious of thin film transistor base plate
Showing device.
For up to above-mentioned purpose, a kind of thin film transistor base plate according to the present invention includes a substrate, a grid, a grid and is situated between
Electric layer（gate insulating layer）, a channel layer, a source electrode, one drain electrode and a light shield layer.Grid is arranged at base
Plate.Gate dielectric is arranged on grid and substrate.Channel layer is arranged on gate dielectric.Source electrode is arranged at passage with drain electrode
Contacted on layer and with channel layer, and there is an interval between drain electrode and source electrode.Light shield layer masking interval.Channel layer includes an oxygen
Compound semiconductor.
For up to above-mentioned purpose, a kind of display device according to the present invention include a thin film transistor base plate, an opposite substrate,
One liquid crystal layer and a backlight module.Thin film transistor base plate has a substrate, a grid, a gate dielectric, a channel layer, one
Source electrode, a drain electrode and a light shield layer.Grid is arranged at substrate.Gate dielectric is arranged on grid and substrate.Channel layer is set
It is placed on gate dielectric.Source electrode is arranged on channel layer with drain electrode and contacted with channel layer, and has between drain electrode and source electrode
One interval.Light shield layer masking interval.Channel layer includes monoxide semiconductor.Opposite substrate is relative with thin film transistor base plate
Set.Liquid crystal layer is arranged between thin film transistor base plate and opposite substrate.Backlight module is arranged at thin film transistor base plate phase
For the opposite side of opposite substrate.
From the above, because a kind of thin film transistor base plate according to the present invention and the display for possessing thin film transistor base plate are filled
Put, by interval of the light shield layer between source electrode and drain electrode is arranged at, block the path that light marches to channel layer.So as to real
The irradiation of effectively isolation light is now able to, to lift the stability of thin film transistor (TFT), and aperture opening ratio can be improved simultaneously.
Brief description of the drawings
Figure 1A is a kind of diagrammatic cross-section of thin film transistor base plate according to present pre-ferred embodiments；
Figure 1B is the diagrammatic cross-section of another thin film transistor base plate according to present pre-ferred embodiments；
Fig. 2A to Fig. 2 C is the section of a variety of change aspects of the thin film transistor base plate according to present pre-ferred embodiments
Schematic diagram；
Fig. 3 is a kind of diagrammatic cross-section of display device according to present pre-ferred embodiments；And
Fig. 4 A to Fig. 4 C are the diagrammatic cross-section of a variety of change aspects of the display device according to present pre-ferred embodiments.
Drawing reference numeral
1A、1B、2A、2B、2C、31：Thin film transistor base plate
11、310：Grid
12、311：Gate dielectric
13、312：Channel layer
14、313：Source electrode
15、314：Drain electrode
16、315：Light shield layer
21、316：First passivation layer
22、317：Light absorbing layer
23、318：Second passivation layer
24、319：Transparent conductive layer
25：Common electrode
26：Conductive layer
3、4A、4B、4C：Display device
32：Liquid crystal layer
33：Backlight module
A：Light alignment film
E：Electrode layer
ES：Etch stop layer
F：Colored filter
I：Interval
S1：Substrate
S2：Opposite substrate
Embodiment
Hereinafter with reference to correlative type, illustrate according to present pre-ferred embodiments thin film transistor base plate and to possess film brilliant
The display device of body pipe substrate, wherein identical element will be illustrated with identical reference marks.
First, it refer to shown in Figure 1A, a kind of thin film transistor base plate 1A of its present pre-ferred embodiments.Film crystal
Pipe substrate 1A includes a substrate S1, a grid 11, a gate dielectric 12, a channel layer 13, a source electrode 14, one drain electrode 15 and one
Light shield layer 16.On the implementation, substrate S1 can be the material of a light-permeable, for penetration display device, e.g. glass, stone
English or the like, plastic cement, rubber, glass fibre or other high polymer materials, preferably can be a borate alkali-free glass substrate
（alumino silicate glass substrate）.Substrate S1 also can be a lighttight material, for self-luminous or anti-
Penetrate formula display device, e.g. metal-glass fiber composite plate, metal-ceramic composite plate.
Grid 11 is arranged on substrate S1, and the material of grid 11 is, for example, metal（Such as aluminium, copper, silver, molybdenum, titanium）Or its
The single or multiple lift structure that alloy is constituted.Part transmitting the wire of drive signal, can use with grid 11 with layer and
The structure of same technique, is electrical connected each other, for example scan line（scan line）.Gate dielectric 12 is arranged on grid 11,
And gate dielectric 12 can be organic material such as organo-siloxane compound, or inorganic such as silicon nitride, silica, nitrogen oxidation
Silicon, carborundum, aluminum oxide, the sandwich construction of hafnium oxide or above-mentioned material.Gate dielectric 12 need to completely cover grid 11, and
Selectable portion or all covering substrate S1.
The position of 13 opposing gate of channel layer 11 is arranged on gate dielectric 12.On the implementation, channel layer 13 includes an oxygen
Compound semiconductor.Wherein, foregoing oxide semiconductor includes oxide, and oxide includes indium, zinc and tin at least within
One of, it is preferred that oxide semiconductor is noncrystalline indium gallium zinc.
Source electrode 14 is respectively arranged on channel layer 13 with drain electrode 15, and source electrode 14 and drain electrode 15 connect with channel layer 13 respectively
Touch, when the channel layer of thin film transistor (TFT) is not turned on, both are electrically isolated.Source electrode 14 with drain electrode 15 material can be metal（Example
Such as aluminium, copper, silver, molybdenum, titanium）Or the single or multiple lift structure that its alloy is constituted.In addition, having one between source electrode 14 and drain electrode 15
It is spaced I.Wire of the part to transmit drive signal, can be used with source electrode 14 with drain electrode 15 with layer and the knot of same technique
Structure, such as data line（data line）.
Light shield layer 16 is arranged on layout I, and covers interval I.The material of light shield layer 16 includes chromium（chromium）、
Acryl resin（acrylic resin）Or titanium oxide（TiO2）.Wherein, when the material of light shield layer 16 is to include acryl tree
During fat, the material of light shield layer 16 then further includes carbon black（carbon）Or black dyes.
In practice, the thickness of light shield layer 16 is preferably between 0.15 micron to 1.2 microns, and its OD value
（Optical density, OD, or referred to as light absorption value）Preferably between 4 to 6.In addition, in order to avoid light be irradiated to it is logical
Channel layer 13, and the path that light marches to channel layer 13 is effectively blocked, light shield layer 16 is above leading in the projection of vertical direction
The outer rim of channel layer 13, and the distance exceeded is at least 1 micron, it is preferred that between 1 micron to 2 microns.Further, since light covers
The material and the factor of technique journey of layer 16, the outer rim of light shield layer 16 is an inclined-plane extended towards substrate S1 surface, changes speech
It, there is the outer rim of light shield layer 16 angle between an oblique angle, and this oblique angle and horizontal direction to be 25 degree to 60 degree.
It is noted that be to be directly arranged at source electrode 14 with drain electrode 15 on channel layer 13 in the present embodiment, and with leading to
Exemplified by channel layer 13 is contacted, however, as shown in Figure 1B, under other technology modes, thin film transistor base plate 1B source electrode 14 with
Drain electrode 15 may be disposed at etching termination（etch stop）On layer ES, and source electrode 14 and one end of drain electrode 15 are etched eventually certainly respectively
Only layer ES opening is contacted with channel layer 13.Etch stop layer ES can be single-layer inorganic material such as silicon nitride, silica, nitrogen oxidation
Silicon, carborundum, aluminum oxide, the sandwich construction of hafnium oxide or above-mentioned material.
Then, Fig. 2A to Fig. 2 C is refer to, to further illustrate the thin film transistor base plate of present pre-ferred embodiments
A variety of change aspects.As shown in Figure 2 A, thin film transistor base plate 2A and thin film transistor base plate 1B is compared, and its difference is, thin
Film transistor substrate 2A further includes one first passivation layer 21, a light absorbing layer 22, one second passivation layer 23 and an electrically conducting transparent figure
Pattern layer 24.
In the present embodiment, the first passivation layer 21 is arranged on light shield layer 16.Light absorbing layer 22 is arranged at the first passivation
Layer upper 21, and the thickness of light absorbing layer 22 is between 1 micron to 2.5 microns.Second passivation layer 23 is arranged on light absorbing layer 22.
Transparent conductive layer 24 is arranged on the second passivation layer 23, and its material can be indium tin oxide（ITO）, indium-zinc oxide
（IZO）, aluminium zinc oxide（AZO）, cadmium tin-oxide（CTO）, tin oxide（SnO2）Or zinc oxide（ZnO）Deng electrically conducting transparent material
Material.In addition, the material of light absorbing layer 22 is, for example, organic dielectric material, its absorbable wavelength is less than 400 nanometers of light, special
It is not to be used to absorb backlight module（Figure is not shown）Reflect in the light of light shield layer 16, further to block light irradiation
To channel layer 13, so as to avoid the deterioration of the generation electrical characteristics of channel layer 13.Colored filter material may be selected in light absorbing layer 22.
Again as shown in Figure 2 B, its for another preferred embodiment of the present invention thin film transistor base plate 2B, it is brilliant with film
Body pipe substrate 2A is compared, and thin film transistor base plate 2B the first passivation layer 21 is disposed on source electrode 14 and drain electrode 15.Light absorbs
Layer 22 is arranged on light shield layer 16.Second passivation layer 23 is arranged on light absorbing layer 22.Transparent conductive layer 24 is then set
In on the second passivation layer 23.In addition, as shown in Figure 2 C, thin film transistor base plate 2C the first passivation layer 21 be arranged at source electrode 14 with
In drain electrode 15.Light absorbing layer 22 is arranged on the first passivation layer 21.Second passivation layer 23 is arranged on light shield layer 16.It is transparent to lead
Electrograph pattern layer 24 is arranged on the second passivation layer 23.
In addition, need it is specifically intended that above for convenient explanation, Figure 1A, Figure 1B and each shown by Fig. 2A to Fig. 2 C
The height of element and the size relationship of width（Ratio）Only illustrate, do not represent actual size relationship.Secondly, implementing
When, thin film transistor base plate further includes community electrode（common electrode）And a conductive layer.As Fig. 2A to Fig. 2 C institute
Show, common electrode 25 is arranged on substrate S1, conductive layer 26 is disposed between the second passivation layer 23 and light absorbing layer 22, and edge
Light absorbing layer 22 extends to common electrode 25, and is electrically connected with common electrode 25.Due to, common electrode 25 described herein with
The material and set-up mode of conductive layer 26, are all that the technical field of the invention has known to usually intellectual, therefore herein not
Repeat again.
Then, Fig. 3 is refer to, it is a kind of display device 3 of present pre-ferred embodiments.It is thin that display device 3 includes one
Film transistor substrate 31, an opposite substrate S2, a liquid crystal layer 32 and a backlight module 33.
Thin film transistor base plate 31 includes a substrate S1, a grid 310, a gate dielectric 311, a channel layer 312, one
314, one light shield layer 315 of the drain electrode of source electrode 313, one, one first passivation layer 316, a light absorbing layer 317, one second passivation layer 318
And a transparent conductive layer 319.Grid 310 is arranged on substrate S1.Wherein, foregoing substrate S1 can be the material of a light-permeable
Matter is constituted, e.g. glass, quartz or the like.
Gate dielectric 311 is arranged on grid 310.Channel layer 312 is arranged on gate dielectric 311, and channel layer
312 include monoxide semiconductor.Wherein, foregoing oxide semiconductor includes oxide, and oxide includes indium, zinc and tin
At least one, it is preferred that oxide semiconductor be noncrystalline indium gallium zinc.
Source electrode 313 is respectively arranged on channel layer 312 with drain electrode 314, and is contacted respectively with channel layer 312.Wherein, grid
310th, the sandwich construction that source electrode 313 and the material of drain electrode 314 can be made up of metal, alloy or Metal and Alloy.In addition, source electrode
There is an interval I between 313 and drain electrode 314.Light shield layer 315 is arranged on layout I, and covers interval I.Light shield layer 315
Material include chromium, acryl resin or titanium oxide.Wherein, when the material of light shield layer 315 is to include acryl resin, light
The material of shielding layer 315 then further includes carbon black or black dyes.
On the implementation, the thickness of light shield layer 315 is preferably between 0.15 micron to 1.2 microns, and its OD value compared with
Good is between 4 to 6.In addition, in order to avoid light is irradiated to channel layer 312, and effectively blocks light and march to channel layer 312
Path, light shield layer 315 is above the outer rim of channel layer 312 in the projection of vertical direction, and to be at least 1 micro- for the distance exceeded
Rice, and preferably between 1 micron to 2 microns.
First passivation layer 316 is arranged on light shield layer 315.Light absorbing layer 317 is arranged at 316 on the first passivation layer, and
The thickness of light absorbing layer 317 is between 1 micron to 2.5 microns.Second passivation layer 318 is arranged on light absorbing layer 317.It is transparent to lead
Electrograph pattern layer 319 is arranged on the second passivation layer 318, and its material can be indium tin oxide, indium-zinc oxide, the oxidation of aluminium zinc
The transparent conductive materials such as thing, cadmium tin-oxide, tin oxide or zinc oxide.Received in addition, light absorbing layer 317 can absorb wavelength for 400
Light below rice.Colored filter material may be selected in light absorbing layer 317.
Opposite substrate S2 is oppositely arranged with thin film transistor base plate 31, and with the smooth alignment film A of an electrode layer E and one.It is right
Can be the material of a light-permeable, e.g. glass, quartz or the like to substrate S2.Wherein, in practice, film crystal
The substrate S1 and opposite substrate S2 of pipe substrate 31 can select different materials, and e.g. opposite substrate S2 uses potash glass substrate,
And substrate S1 uses borate alkali-free glass substrate.In addition, electrode layer E is disposed on opposite substrate S2 in face of thin film transistor (TFT) base
The side of plate 31, and light alignment film A is then arranged at electrode layer E.Also colorized optical filtering is can be inserted between opposite substrate S2 and electrode layer E
Piece F is shown as colorization to be used.
Liquid crystal layer 32 is arranged between thin film transistor base plate 31 and opposite substrate S2.It is brilliant that backlight module 33 is arranged at film
Opposite side of the body pipe substrate 31 relative to opposite substrate S2, and emit beam, make light from the substrate of thin film transistor base plate 31
S1 is projected by liquid crystal layer 32, then by opposite substrate S2.In addition, sending and reflecting in light shield layer for backlight module 33
315 light, can be absorbed by light absorbing layer 317, and channel layer 312 is irradiated to further to block light, so that
Channel layer 312 is avoided to produce the deterioration of electrical characteristics.
Need it is specifically intended that when when using other technology mode, the group of the thin film transistor base plate of display device
Into can further include an etch stop layer, and the source electrode of thin film transistor base plate and drain electrode may be disposed on etch stop layer, source electrode
It can then be contacted respectively from the opening of etch stop layer with channel layer with one end of drain electrode.
Then, Fig. 4 A to Fig. 4 C are refer to, to illustrate a variety of changes of the display device according to present pre-ferred embodiments
Aspect.As shown in Figure 4 A, display device 4A is compared with display device 3, and display device 4A uses thin film transistor base plate 2A group
Into structure.In the present embodiment, thin film transistor base plate 2A source electrode 14 and drain electrode 15 are arranged on etch stop layer ES, and thin
Film transistor substrate 2A the first passivation layer 21 is arranged on light shield layer 16.Light absorbing layer 22 is arranged on the first passivation layer
21, and the thickness of light absorbing layer 22 is between 1 micron to 2.5 microns.Second passivation layer 23 is arranged on light absorbing layer 22.It is transparent
Conductive pattern layer 24 is arranged on the second passivation layer 23.Light absorbing layer 22 is special to the light that absorbing wavelength is less than 400 nanometers
It is not to be reflected for absorbing backlight module 33 in the light of light shield layer 16, channel layer is irradiated to further to block light
13.Colored filter material may be selected in light absorbing layer 22.
In addition, as shown in figs. 4 b and 4 c, display device 4B and display device 4C and display device 4A difference are, show
Showing device 4B and display device 4C have thin film transistor base plate 2B and thin film transistor base plate 2C respectively.Due to display device 4B
And display device 4C and above-described embodiment display device 4A, thin film transistor base plate 2B and thin film transistor base plate 2C have phase
Same technical characteristic, therefore repeated no more in this.
In summary, because a kind of thin film transistor base plate according to the present invention and the display for possessing thin film transistor base plate are filled
Put, by interval of the light shield layer between source electrode and drain electrode is arranged at, channel layer is marched to cover interval, and block light
Path.It can effectively completely cut off the irradiation of light so as to realize, to lift the stability of thin film transistor (TFT), and can improve simultaneously
Aperture opening ratio.
Illustrative is the foregoing is only, rather than is restricted person.Any spirit and scope without departing from the present invention, and to it
In the equivalent modifications of progress or change, the claim being intended to be limited solely by.
Claims (16)
1. a kind of thin film transistor base plate, it is characterised in that the thin film transistor base plate includes：
One substrate；
One grid, is arranged on the substrate；
One gate dielectric, is arranged on the grid and the substrate；
One channel layer, is arranged on the gate dielectric, and the material of the channel layer includes monoxide semiconductor；
One etch stop layer, is arranged on the channel layer；
One source electrode, is arranged on the etch stop layer, and one end of the source electrode is open and institute from the one of the etch stop layer
State channel layer contact；
One drain electrode, is arranged on the etch stop layer, one end of the drain electrode from another opening of the etch stop layer with
The channel layer contact, and there is an interval between the drain electrode and the source electrode；
One light shield layer, covers the interval；And
One first passivation layer, is arranged on the light shield layer,
Wherein, the etch stop layer is between the channel layer and the light shield layer, and the light shield layer covering is located at
Etch stop layer between the channel layer and the source electrode and the drain electrode, the light shield layer is arranged on first passivation
Between layer and the source electrode, the drain electrode and etch stop layer in the interval, and the light shield layer is contacted and covered
Lid is located at the etch stop layer in the interval.
2. thin film transistor base plate as claimed in claim 1, it is characterised in that the oxide semiconductor includes oxide,
And the oxide includes at least one of indium, zinc and tin.
3. thin film transistor base plate as claimed in claim 1, it is characterised in that the material of the light shield layer includes chromium, pressure
Gram force resin or titanium oxide.
4. thin film transistor base plate as claimed in claim 1, it is characterised in that the thickness of the light shield layer is micro- between 0.15
Rice is to 1.2 microns.
5. thin film transistor base plate as claimed in claim 1, it is characterised in that the OD value of the light shield layer is between 4
To 6.
6. thin film transistor base plate as claimed in claim 1, it is characterised in that the light shield layer is in the projection of vertical direction
Beyond 1 micron to 2 microns of the outer rim of the channel layer.
7. thin film transistor base plate as claimed in claim 1, it is characterised in that the thin film transistor base plate includes：
One light absorbing layer, is arranged on first passivation layer；
One second passivation layer, is arranged on the light absorbing layer；And
One transparent conductive layer, is arranged on second passivation layer.
8. thin film transistor base plate as claimed in claim 7, it is characterised in that the light absorbing layer absorbing wavelength is received for 400
Light below rice.
9. a kind of display device, it is characterised in that the display device includes：
One thin film transistor base plate, with a substrate, a grid, a gate dielectric, a channel layer, an etch stop layer, one
Source electrode, a drain electrode, a light shield layer and one first passivation layer, the grid are arranged on the substrate, the gate dielectric
It is arranged on the grid and the substrate, the channel layer is arranged on the gate dielectric, the material of the channel layer
Including monoxide semiconductor, the etch stop layer is arranged on the channel layer, and the source electrode is arranged at the etching eventually
Only on layer, one end of the source electrode is contacted from an opening of the etch stop layer with the channel layer, and the drain electrode is arranged at
On the etch stop layer, one end of the drain electrode is contacted from another opening of the etch stop layer with the channel layer, institute
Stating has an interval between drain electrode and the source electrode, the light shield layer covers the interval, and first passivation layer is arranged at
On the light shield layer, wherein, the etch stop layer is between the channel layer and the light shield layer, the light masking
Layer covering is located at the etch stop layer between the channel layer and the source electrode and the drain electrode, and the light shield layer is arranged on institute
State between the first passivation layer and the source electrode, the drain electrode and etch stop layer in the interval, and the light covers
Layer contacts and covers the etch stop layer in the interval；
One opposite substrate, is oppositely arranged with the thin film transistor base plate；
One liquid crystal layer, is arranged between the thin film transistor base plate and the opposite substrate；And
One backlight module, the thin film transistor base plate is between the backlight module and the opposite substrate.
10. display device as claimed in claim 9, it is characterised in that the oxide semiconductor includes oxide, and described
Oxide includes at least one of indium, zinc and tin.
11. display device as claimed in claim 9, it is characterised in that the material of the light shield layer includes chromium, acryl tree
Fat or titanium oxide.
12. display device as claimed in claim 9, it is characterised in that the thickness of the light shield layer between 0.15 micron extremely
1.2 microns, and the light shield layer OD value between 4 to 6.
13. display device as claimed in claim 9, it is characterised in that the light shield layer exceeds in the projection of vertical direction
1 micron to 2 microns of the outer rim of the channel layer.
14. display device as claimed in claim 9, it is characterised in that the thin film transistor base plate includes：
One light absorbing layer, is arranged on first passivation layer；
One second passivation layer, is arranged on the light absorbing layer；And
One transparent conductive layer, is arranged on second passivation layer.
15. display device as claimed in claim 14, it is characterised in that the light absorbing layer absorbing wavelength be 400 nanometers with
Under light.
16. display device as claimed in claim 9, it is characterised in that the side of the opposite substrate have an electrode layer and
One smooth alignment film, the smooth alignment film is arranged at the electrode layer.
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| CN105070729A (en) * | 2015-08-31 | 2015-11-18 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN108573981B (en) * | 2017-03-10 | 2021-12-03 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN107046042B (en) * | 2017-04-20 | 2019-08-23 | 京东方科技集团股份有限公司 | A kind of low temperature polycrystalline silicon backboard and its manufacturing method, display device |
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| KR100820104B1 (en) * | 2001-07-25 | 2008-04-07 | 엘지.필립스 엘시디 주식회사 | liquid crystal display and manufacturing method of the same |
| JP2007333809A (en) * | 2006-06-12 | 2007-12-27 | Mitsubishi Electric Corp | Transflective liquid crystal display device |
| KR101019048B1 (en) * | 2008-11-20 | 2011-03-07 | 엘지디스플레이 주식회사 | Array substrate and method of fabricating the same |
| KR101064402B1 (en) * | 2009-01-12 | 2011-09-14 | 삼성모바일디스플레이주식회사 | Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor |
| KR101084176B1 (en) * | 2009-11-26 | 2011-11-17 | 삼성모바일디스플레이주식회사 | Organic light emitting display |
| CN107452630B (en) * | 2010-07-02 | 2020-11-27 | 株式会社半导体能源研究所 | Semiconductor device with a plurality of semiconductor chips |
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Address after: Guangdong province Shenzhen City, Longhua Town, Foxconn science and Technology Industrial Park E District 4 building, building 1, building Applicant after: Qunkang Technology (Shenzhen) Co., Ltd. Applicant after: Innolux Display Group Address before: 518109 Longhua, Shenzhen, town, Foxconn science and Technology Industrial Park E District, building 4, building 1, building Applicant before: Qunkang Technology (Shenzhen) Co., Ltd. Applicant before: Chimei Optoelectronics Co., Ltd. |
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