CN103579034B - 监测芯片内部电位的聚焦离子束方法 - Google Patents
监测芯片内部电位的聚焦离子束方法 Download PDFInfo
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- CN103579034B CN103579034B CN201210262421.2A CN201210262421A CN103579034B CN 103579034 B CN103579034 B CN 103579034B CN 201210262421 A CN201210262421 A CN 201210262421A CN 103579034 B CN103579034 B CN 103579034B
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- ion beam
- pad
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- potential
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
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Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210262421.2A CN103579034B (zh) | 2012-07-27 | 2012-07-27 | 监测芯片内部电位的聚焦离子束方法 |
Applications Claiming Priority (1)
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CN201210262421.2A CN103579034B (zh) | 2012-07-27 | 2012-07-27 | 监测芯片内部电位的聚焦离子束方法 |
Publications (2)
Publication Number | Publication Date |
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CN103579034A CN103579034A (zh) | 2014-02-12 |
CN103579034B true CN103579034B (zh) | 2016-04-13 |
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CN201210262421.2A Active CN103579034B (zh) | 2012-07-27 | 2012-07-27 | 监测芯片内部电位的聚焦离子束方法 |
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CN (1) | CN103579034B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104360259A (zh) * | 2014-11-12 | 2015-02-18 | 广州中大微电子有限公司 | 一种基于fib测试rfid信号的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200713547A (en) * | 2005-09-22 | 2007-04-01 | Integrated Service Technology Inc | Method for introducing/probing signals from a circuit by using a metal wire bonding technology with focused ion beams to form an electrically conductive path |
CN101825592A (zh) * | 2010-04-02 | 2010-09-08 | 中国科学院工程热物理研究所 | 谐波法单根导电丝状材料热物性测试方法及装置 |
CN202281810U (zh) * | 2011-09-05 | 2012-06-20 | 上海华虹Nec电子有限公司 | 电迁移的测试结构 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006313762A (ja) * | 2005-05-06 | 2006-11-16 | Kawasaki Microelectronics Kk | 半導体集積回路における容量付加方法および半導体集積回路 |
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2012
- 2012-07-27 CN CN201210262421.2A patent/CN103579034B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200713547A (en) * | 2005-09-22 | 2007-04-01 | Integrated Service Technology Inc | Method for introducing/probing signals from a circuit by using a metal wire bonding technology with focused ion beams to form an electrically conductive path |
CN101825592A (zh) * | 2010-04-02 | 2010-09-08 | 中国科学院工程热物理研究所 | 谐波法单根导电丝状材料热物性测试方法及装置 |
CN202281810U (zh) * | 2011-09-05 | 2012-06-20 | 上海华虹Nec电子有限公司 | 电迁移的测试结构 |
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CN103579034A (zh) | 2014-02-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140115 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140115 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |