CN103567633A - Special cleaning method for removing dust for CIGS subjected to laser front cutting - Google Patents
Special cleaning method for removing dust for CIGS subjected to laser front cutting Download PDFInfo
- Publication number
- CN103567633A CN103567633A CN201210260243.XA CN201210260243A CN103567633A CN 103567633 A CN103567633 A CN 103567633A CN 201210260243 A CN201210260243 A CN 201210260243A CN 103567633 A CN103567633 A CN 103567633A
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- Prior art keywords
- dust
- laser
- cigs
- molybdenum
- line
- Prior art date
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- 239000000428 dust Substances 0.000 title claims abstract description 49
- 238000004140 cleaning Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 34
- 239000011733 molybdenum Substances 0.000 claims abstract description 34
- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000004744 fabric Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229920000742 Cotton Polymers 0.000 claims abstract description 3
- 230000000694 effects Effects 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims 1
- 230000004927 fusion Effects 0.000 abstract 2
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention relates to a special cleaning method which mainly aims at removing dust for CIGS subjected to laser front cutting. After molybdenum in the CIGS is subjected to Laser scribing, the high temperature of Laser has a fusion effect on molybdenum, and under the fusion condition, dust similar to a crater shape is generated in a groove formed after scribing. Usually, after a film is coated on the metal molybdenum of a back contact, the film can not be washed by using water, and the dust can not be removed. The special cleaning method is characterized in that warm cotton seamless wiping cloth is arranged in a Laser scribing machine and used for cleaning each line after the scribing. When glass is conveyed into the Laser scribing machine, the scribing adopts a front cutting mode. After the scribing is finished, the dust is removed by using the cleaning wiping cloth, and the crater-shaped dust can be removed. A condition that an interface between the CIGS and the molybdenum is poor due to the dust can be reduced in the follow-up film coating on molybdenum glass of CIGS.
Description
Technical field
This method is by the technological core CIGS ruling in thin film solar, CIGS and non-crystalline silicon, the battery that microcrystal silicon is identical all to be needed to cut into pieces the generating of connecting, can be so that the lifting of solar array voltage and electric current, promote generating efficiency, and in non-crystalline silicon and microcrystal silicon, be all to use laser laser to rule, and CIGS is rule by mechanical type pen machine, but the molybdenum of its CIGS can be rule by laser, its advantage is to use laser to have preferably aligning accuracy, but molybdenum easily produces afterwards volcanic crater and then affects efficiency in line, the present invention designs unique clean method in pen machine, can remove molybdenum and after line, residue in surperficial volcanic crater dust, can improve by this problem that has Efficiency Decreasing when CIGS connects.
Background technology
Industry is for existing many research in thin-film solar cells, and there is in recent years an emerging industry, it is CIGS industry, it is by Cu, In, Ga, the material of Se carries out plated film, the advantage of this industry is it as long as use at present the most frequently used on the market board PVD to complete, and the gas using in coating process does not have harm personnel's gas, and its CIGS is in light absorption, the light source that absorbs long-wave band (as 500nm ~ 1300nm wave band) that can be a large amount of, therefore its generating conversion efficiency can reach the highest, therefore be the material that current many research units and enterprise chase after family, and in CIGS because plated film is all to use metal to carry out plated film to be semiconductor shape, the back electrode of its use is to take molybdenum as main, absorbed layer is CIGS body, finally that front electrode ITO is main, and CIGS thin film solar is the same with non-crystal silicon solar energy, it is all the generating of connecting of the battery that need to rule to form small pieces, wherein the most frequently used is exactly Laser laser, and CIGS is because material relation own, after general Laser laser scribing, easily phase inversion becomes metal level, and then affect successive process, therefore conventional machinery formula pen machine, but the front electrode molybdenum of CIGS is to use Laser laser to rule, major advantage is to use Laser laser scribing can have preferably precision, can dwindle by this line dead space, but molybdenum easily produces volcanic crater dust because of melting afterwards in line, in order to remove these volcanic crater dust, therefore carry out the present invention, improve volcanic crater problem.
Summary of the invention
Main purpose of the present invention is to improve the special clean method that CIGS removes dust after laser tangent, molybdenum in the middle of CIGS is after Laser laser scribing, can be because the effect that the high temperature of Laser laser starts molybdenum to have melting, the situation of melting can allow line groove later start to produce similar crateriform dust like this, these dust all can not be attached on molybdenum glass through processing, and after back electrode metal molybdenum plated film completes, be generally that unavailable water cleans, therefore its dust just cannot be removed, therefore the present invention is the special clean method of design, this cleaning mode is in Laser laser scribing machine, designing it clean is to use warm cotton and seamless cleaning wiping cloth each line after line to clean, after in glass is passed to Laser laser scribing machine, its line is to adopt tangent mode, after line, these dust are just cleaned by the cleaning wiping cloth cleaning immediately, so can remove volcanic crater dust, and Using such method to reduce CIGS follow-up on molybdenum glass during plated film, can reduce these dust and have CIGS and the molybdenum not good situation of interface each other that causes.
The specific embodiment
Hereby the present invention is coordinated to accompanying drawing, shown in being described in detail as follows: Fig. 1 is that the present invention improves the pen machine schematic diagram that CIGS removes the special clean method of dust after laser tangent, known in figure, its molybdenum glass (2) be take face upward as the mode of tangent is transmitted and entered Laser pen machine body interior by roller (1), subsequently by location Sensor(3) glass is positioned, in addition by clip (7), fix glass again, now can first dust arrester (6) be opened, and Laser Laser output device (4) is opened, the wavelength that this laser is used is 1064nm, this kind of wavelength molybdenum glass of can ruling completely, and laser Laser output device has a fixator (5) to support, line is that Laser maintenance is motionless, glass is to fix against clip, then with roller, carrying out transmission rules, and because of CIGS, be to adopt tangent in line, therefore glass face needs upward, therefore set up in board top the absorption that dust arrester is made dust, but dust arrester can only adsorb the dust producing after the moment line of laser laser, for the volcanic crater dust of melting, cannot do to adsorb, therefore cleaning mode of the present invention is posture cleaning wiping cloth (10) in Laser board body, these cleaning wiping cloth are clamped by mechanical spring (9), this mechanical spring can be done rise and fall action, with allow cleaning wiping cloth can near or away from molybdenum glass, and integral body is to be erected on fixed mount (8), can be sent to cleaning wiping cloth by roller after molybdenum glass has been rule before, start to clean, this mode is the cleaning mode of universe formula, when complete clean after, can complete removal volcanic crater dust.
Refer to Fig. 2, this improves the cleaning mode schematic diagram that CIGS removes the special clean method of dust after laser tangent for the present invention, in figure, can learn, cleaning wiping cloth (10) is clipped in mechanical spring (9) the inside, and mechanical spring can press down and allow cleaning wiping cloth can contact molybdenum glass (2), and main removal is the dust that molybdenum glass produces afterwards in line, what therefore remove is the volcanic crater dust in line groove (11), remove by this dust, and the method can be follow-up while carrying out CIGS plated film, its molybdenum can have better contacting with CIGS interface, and improve by this production yield.
More than explanation, just illustrative, nonrestrictive for the purpose of the present invention; those of ordinary skills understand; in the situation that do not depart from the spirit and scope that claim limits, can make many corrections, variation or equivalence, but within all will falling into protection scope of the present invention.
accompanying drawing explanation
That the present invention is further described in conjunction with the accompanying drawings and embodiments below.
Fig. 1 is the present invention's Laser laser scribing machine and cleaning equipment schematic diagram
Fig. 2 is the present invention's cleaning wiping cloth wiping mode schematic diagram
Main element symbol description: 1 ... roller 2 ... molybdenum glass 3 ... location Sensor4 ... Laser Laser output device 5 ... fixed mount 6 ... dust arrester 7 ... fixing glass folder 8 ... fixedly wiping cloth holder 9 ... mechanical spring 10 ... cleaning wiping cloth 11 ... line groove.
Claims (5)
1. one kind is improved the special clean method that CIGS removes dust after laser tangent, molybdenum in the middle of CIGS is after Laser laser scribing, can be because the effect that the high temperature of Laser laser starts molybdenum to have melting, the situation of melting can allow line groove later start to produce similar crateriform dust like this, these dust all can not be attached on molybdenum glass through processing, and after back electrode metal molybdenum plated film completes, be generally that unavailable water cleans, therefore its dust just cannot be removed, therefore the present invention is the special clean method of design, this cleaning mode is in Laser laser scribing machine, designing it clean is to use warm cotton and seamless cleaning wiping cloth each line after line to clean, after in glass is passed to Laser laser scribing machine, its line is to adopt tangent mode, after line, these dust are just cleaned by the cleaning wiping cloth cleaning immediately, so can remove volcanic crater dust, and Using such method to reduce CIGS follow-up on molybdenum glass during plated film, can reduce these dust and have CIGS and the molybdenum not good situation of interface each other that causes.
2. the CIGS of improvement according to claim 1 removes the special clean method of dust after laser tangent, in its laser board, there is one group of cleaning equipment, it is mainly cleaning wiping cloth, this cleaning wiping cloth can be come by the lifting of mechanical spring to cut place with molybdenum glass, and carrys out by this rear volcanic crater dust producing of wiping line.
3. the CIGS of improvement according to claim 1 removes the special clean method of dust after laser tangent, on its laser follower, there is a fixed mount, this fixed mount can be completely fixed laser follower, it can not slided, when ruling, just can there be preferably precision and the depth of parallelism, thus, also can be comparatively smooth during line.
4. the CIGS of improvement according to claim 1 removes the special clean method of dust after laser tangent, its mechanical spring is fixed on fixed mount, this mechanical spring can be done lifting, and mechanical spring can allow accurately cleaning wiping cloth with line trench contact, by this volcanic crater dust is removed, and can not allow dust again contact with molybdenum glass, promote by this follow-up molybdenum and contact with CIGS interface.
5. the CIGS of improvement according to claim 1 removes the special clean method of dust after laser tangent, its glass is to adopt tangent mode, mainly because the bottom of rete is back electrode, Laser laser is bright dipping from top to bottom, therefore after line, can produce dust, dust arrester in this design can adsorb the dust that these moment line produce, and volcanic crater dust is to need the design's cleaning mode to clean, and just can completely be effective.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210260243.XA CN103567633A (en) | 2012-07-26 | 2012-07-26 | Special cleaning method for removing dust for CIGS subjected to laser front cutting |
Applications Claiming Priority (1)
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CN201210260243.XA CN103567633A (en) | 2012-07-26 | 2012-07-26 | Special cleaning method for removing dust for CIGS subjected to laser front cutting |
Publications (1)
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CN103567633A true CN103567633A (en) | 2014-02-12 |
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CN201210260243.XA Pending CN103567633A (en) | 2012-07-26 | 2012-07-26 | Special cleaning method for removing dust for CIGS subjected to laser front cutting |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105234561A (en) * | 2015-10-13 | 2016-01-13 | 深圳英诺激光科技有限公司 | Automatic laser cutting static electricity decarbonizing system and method for PI cover film |
CN105234562A (en) * | 2015-10-13 | 2016-01-13 | 深圳英诺激光科技有限公司 | Automatic laser cutting and decarbonizing system and method for polyimide film (PI) cover film |
CN107234106A (en) * | 2017-07-21 | 2017-10-10 | 新兴铸管股份有限公司 | The device cleaned to ductile iron pipe or pipe die outer wall |
-
2012
- 2012-07-26 CN CN201210260243.XA patent/CN103567633A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105234561A (en) * | 2015-10-13 | 2016-01-13 | 深圳英诺激光科技有限公司 | Automatic laser cutting static electricity decarbonizing system and method for PI cover film |
CN105234562A (en) * | 2015-10-13 | 2016-01-13 | 深圳英诺激光科技有限公司 | Automatic laser cutting and decarbonizing system and method for polyimide film (PI) cover film |
CN107234106A (en) * | 2017-07-21 | 2017-10-10 | 新兴铸管股份有限公司 | The device cleaned to ductile iron pipe or pipe die outer wall |
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Application publication date: 20140212 |