CN103567440A - Preparation method for tungsten carbide target material for film coating of oil exploration drill bit - Google Patents
Preparation method for tungsten carbide target material for film coating of oil exploration drill bit Download PDFInfo
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- CN103567440A CN103567440A CN201310356367.2A CN201310356367A CN103567440A CN 103567440 A CN103567440 A CN 103567440A CN 201310356367 A CN201310356367 A CN 201310356367A CN 103567440 A CN103567440 A CN 103567440A
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- tungsten carbide
- drill bit
- target material
- carbide target
- oil exploration
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Abstract
The invention discloses a preparation method for a tungsten carbide target material for film coating of an oil exploration drill bit. The preparation method comprises the steps of 1) containing tungsten carbide powder with purity of 99.999 percent into a graphite mold and performing pre-cold pressing; 2) putting the graphite mold which contains the pre-cold pressed tungsten carbide powder into a discharge plasma furnace, increasing temperature to 1600-2200DEG C in a protection atmosphere; 3) performing quick discharging in the discharge plasma furnace to form a short circuit to instantly sinter the tungsten carbide powder to form a semi-finished tungsten carbide target material with fine and uniform grains; 4) taking out the semi-finished tungsten carbide target material after the semi-finished tungsten carbide target material is cooled together with the furnace, and performing machining according to requirements to obtain the tungsten carbide target material. The grains of the tungsten carbide target material prepared by using the method are uniform and fine, the strength and the wear resistance of the oil exploration drill bit can be remarkably improved and the service life of the oil exploration drill bit is prolonged.
Description
Technical field
The invention belongs to material processing field, be specifically related to a kind of preparation method of the tungsten carbide target for oil exploration drill bit plated film.
Background technology
Oil exploration industry drill bit used needs high strength, high-wearing feature.Traditional carbide drill hardness and wear resistance still can not satisfy the demands, so adopt the method for plated film to realize.
Summary of the invention
Object of the present invention is providing a kind of preparation method of the tungsten carbide target for oil exploration drill bit plated film
Technical scheme of the present invention is as follows:
A preparation method for the tungsten carbide target of oil exploration drill bit plated film, comprises the steps:
(1) tungsten carbide powder of purity 99.999% is packed in graphite jig, cold pressing pre-;
(2) graphite jig being equipped with through the pre-tungsten carbide powder of colding pressing is put into plasma discharging stove, under protective atmosphere, be warming up to 1600-2200 ℃;
(3) in above-mentioned plasma discharging stove, carry out repid discharge to form short circuit, the above-mentioned tungsten carbide powder of moment sintering, forms the tiny uniform tungsten carbide target blank of crystal grain;
(4) above-mentioned blank is with the cooling rear taking-up of stove, and carries out on request machining, obtains described tungsten carbide target.
In a preferred embodiment of the invention, the Fei Shi particle mean size of described tungsten carbide powder is 1.0-10.0 μ m.
In a preferred embodiment of the invention, described protective atmosphere is argon gas atmosphere.
The invention has the beneficial effects as follows:
The uniform crystal particles of the tungsten carbide target that 1, prepared by method of the present invention is tiny, can significantly improve intensity and the wearability of oil exploration drill bit, extends its service life;
2, the preparation time of method of the present invention is short, completes and only needs 3 hours from starting to sintering, has improved production efficiency;
3, method of the present invention can not produce the pollutants such as any waste material spent acid, meets the demand of production environmental protection.
Accompanying drawing explanation
Fig. 1 is the micro-organization chart of the prepared tungsten carbide target of the embodiment of the present invention 1;
Fig. 2 is the micro-organization chart of the prepared tungsten carbide target of the embodiment of the present invention 2.
The specific embodiment
By the specific embodiment, technical scheme of the present invention is further detailed and is described below.
Embodiment 1
(1) by Fei Shi particle mean size, be that the tungsten carbide powder of the purity 99.999% of 10.0 μ m packs in graphite jig, with hydraulic press, cold pressing in advance;
(2) graphite jig being equipped with through the tungsten carbide powder of pre-cold-press moulding is put into plasma discharging stove, under argon shield atmosphere, be warming up to 1600-2200 ℃;
(3) in above-mentioned plasma discharging stove, carry out repid discharge to form short circuit, the above-mentioned tungsten carbide powder of moment sintering, forms the tiny uniform tungsten carbide target blank of crystal grain;
(4) above-mentioned blank is with the cooling rear taking-up of stove, and carries out machining by customer requirement, obtains described tungsten carbide target, and the micro-organization chart of this tungsten carbide target as shown in Figure 1.
Embodiment 2
(1) by Fei Shi particle mean size, be that the tungsten carbide powder of the purity 99.999% of 5.0 μ m packs in graphite jig, with hydraulic press, cold pressing in advance;
(2) graphite jig being equipped with through the tungsten carbide powder of pre-cold-press moulding is put into plasma discharging stove, under argon shield atmosphere, be warming up to 1600-2200 ℃;
(3) in above-mentioned plasma discharging stove, carry out repid discharge to form short circuit, the above-mentioned tungsten carbide powder of moment sintering, forms the tiny uniform tungsten carbide target blank of crystal grain;
(4) above-mentioned blank is with the cooling rear taking-up of stove, and carries out machining by customer requirement, obtains described tungsten carbide target, and the micro-organization chart of this tungsten carbide target as shown in Figure 2.
Embodiment 3
(1) by Fei Shi particle mean size, be that the tungsten carbide powder of the purity 99.999% of 1.0 μ m packs in graphite jig, with hydraulic press, cold pressing in advance;
(2) graphite jig being equipped with through the tungsten carbide powder of pre-cold-press moulding is put into plasma discharging stove, under argon shield atmosphere, be warming up to 1600-2200 ℃;
(3) in above-mentioned plasma discharging stove, carry out repid discharge to form short circuit, the above-mentioned tungsten carbide powder of moment sintering, forms the tiny uniform tungsten carbide target blank of crystal grain;
(4) above-mentioned blank is with the cooling rear taking-up of stove, and carries out machining by customer requirement, obtains described tungsten carbide target.
The above, be only preferred embodiment of the present invention, therefore can not limit according to this scope of the invention process, the equivalence done according to the scope of the claims of the present invention and description changes and modifies, and all should still belong in the scope that the present invention contains.
Claims (3)
1. for a preparation method for the tungsten carbide target of oil exploration drill bit plated film, it is characterized in that: comprise the steps:
(1) tungsten carbide powder of purity 99.999% is packed in graphite jig, cold pressing pre-;
(2) graphite jig being equipped with through the tungsten carbide powder of pre-cold-press moulding is put into plasma discharging stove, under protective atmosphere, be warming up to 1600-2200 ℃;
(3) in above-mentioned plasma discharging stove, carry out repid discharge to form short circuit, the above-mentioned tungsten carbide powder of moment sintering, forms the tiny uniform tungsten carbide target blank of crystal grain;
(4) above-mentioned blank is with the cooling rear taking-up of stove, and carries out on request machining, obtains described tungsten carbide target.
2. the preparation method of a kind of tungsten carbide target for oil exploration drill bit plated film as claimed in claim 1, is characterized in that: the Fei Shi particle mean size of described tungsten carbide powder is 1.0-10.0 μ m.
3. the preparation method of a kind of tungsten carbide target for oil exploration drill bit plated film as claimed in claim 1, is characterized in that: described protective atmosphere is argon gas atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310356367.2A CN103567440A (en) | 2013-08-15 | 2013-08-15 | Preparation method for tungsten carbide target material for film coating of oil exploration drill bit |
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| CN201310356367.2A CN103567440A (en) | 2013-08-15 | 2013-08-15 | Preparation method for tungsten carbide target material for film coating of oil exploration drill bit |
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| CN103567440A true CN103567440A (en) | 2014-02-12 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104947038A (en) * | 2015-06-30 | 2015-09-30 | 人本集团有限公司 | Processing method of surface of wave-shaped retainer |
| US20160333460A1 (en) * | 2014-03-26 | 2016-11-17 | Jx Nippon Mining & Metals Corporation | Sputtering target comprising tungsten carbide or titanium carbide |
| CN107557738A (en) * | 2017-08-30 | 2018-01-09 | 合肥工业大学 | A kind of manufacture method of the high purity boron target of high-compactness high rigidity |
| CN107620049A (en) * | 2017-09-01 | 2018-01-23 | 北京安泰六九新材料科技有限公司 | A kind of preparation method of soap-free emulsion polymeization phase pure WC target |
| CN111893447A (en) * | 2020-07-10 | 2020-11-06 | 厦门虹鹭钨钼工业有限公司 | Submicron diamond-doped tungsten carbide sputtering target material and preparation method thereof |
| CN114918576A (en) * | 2022-06-23 | 2022-08-19 | 北京安泰六九新材料科技有限公司 | Tungsten carbide binding target material and preparation method thereof |
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| CN1302707A (en) * | 2001-01-20 | 2001-07-11 | 昆明理工大学 | Plasma technology for activating sintered material |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160333460A1 (en) * | 2014-03-26 | 2016-11-17 | Jx Nippon Mining & Metals Corporation | Sputtering target comprising tungsten carbide or titanium carbide |
| CN104947038A (en) * | 2015-06-30 | 2015-09-30 | 人本集团有限公司 | Processing method of surface of wave-shaped retainer |
| CN107557738A (en) * | 2017-08-30 | 2018-01-09 | 合肥工业大学 | A kind of manufacture method of the high purity boron target of high-compactness high rigidity |
| CN107620049A (en) * | 2017-09-01 | 2018-01-23 | 北京安泰六九新材料科技有限公司 | A kind of preparation method of soap-free emulsion polymeization phase pure WC target |
| CN107620049B (en) * | 2017-09-01 | 2019-11-05 | 北京安泰六九新材料科技有限公司 | A kind of preparation method of soap-free emulsion polymeization phase pure WC target |
| CN111893447A (en) * | 2020-07-10 | 2020-11-06 | 厦门虹鹭钨钼工业有限公司 | Submicron diamond-doped tungsten carbide sputtering target material and preparation method thereof |
| CN111893447B (en) * | 2020-07-10 | 2022-04-19 | 厦门虹鹭钨钼工业有限公司 | Submicron diamond-doped tungsten carbide sputtering target material and preparation method thereof |
| CN114918576A (en) * | 2022-06-23 | 2022-08-19 | 北京安泰六九新材料科技有限公司 | Tungsten carbide binding target material and preparation method thereof |
| CN114918576B (en) * | 2022-06-23 | 2023-08-18 | 北京安泰六九新材料科技有限公司 | Tungsten carbide binding target and preparation method thereof |
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Application publication date: 20140212 |