CN1035643C - Method for the fabrication of a semiconductor device - Google Patents
Method for the fabrication of a semiconductor device Download PDFInfo
- Publication number
- CN1035643C CN1035643C CN 94113356 CN94113356A CN1035643C CN 1035643 C CN1035643 C CN 1035643C CN 94113356 CN94113356 CN 94113356 CN 94113356 A CN94113356 A CN 94113356A CN 1035643 C CN1035643 C CN 1035643C
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- CN
- China
- Prior art keywords
- photoresist film
- mask
- shading graph
- extending
- phase shifting
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
A method of manufacturing semi-conductor devices forms a desired graph through two exposures by using a first and a second mask. The method eliminates interference and increases the capacitance like the capacitance of the storing electrode.
Description
The present invention relates generally to a kind of method that is used for producing the semiconductor devices, relate in particular to a kind of employing independently mask form the photoetching method of rectangle sensitization figure, improve the profile of sensitization figure whereby.
Usually form a photoresist film figure by such method: the one deck of spin coating equably on a Semiconductor substrate includes the photosensitive solution of emulsion and resin, in an exposure device that is equipped with a mask with shading graph, the photoresist film that is coated on the Semiconductor substrate is exposed, and the zone that photoresist film has been developed with the exposure of removing photoresist film.
The clear 64-17426 of day disclosure special permission communique discloses a kind of method that forms the photoresist figure.This known method comprises with next step and twice repeatedly: carry out noncontact exposure or reduced projection exposure to being coated on on-chip positive photoresists, then the photoresist after the exposure is developed.
The technology of this formation photoresist film figure commonly used is subjected to the restriction of some factors, such as the precision of exposure device, wavelength or the like.Because in fact the design standard of a semiconductor device is decided by the dimension limit of exposure device, it is very difficult that the technology of the formation photoresist film figure that employing is commonly used forms the figure of semiconductor device, and tolerance becomes very little.In addition, when a branch of light passed through a mask, this Shu Guanghui produced very strong proximity effect, had increased to form to have and the same difficulty of photoresist film figure accurately of designed figure.
Describe the technology of this formation photoresist film figure in more detail referring now to Fig. 1, the figure shows a mask that is used to form such as the storage electrode of a DRAM element.As shown in the drawing, this mask comprises a transparent substrates and is arranged in the shading graph 11 with X and Y size with row and column.Shading graph 11 apart spacings are b in being expert at.In addition, shading graph 11 apart spacings are a in row.
Referring now to Fig. 2, the figure shows the photoresist film figure that forms by the mask that adopts Fig. 1.Photoresist film is coated on the Semiconductor substrate 20, and the mask by Fig. 1 exposes to it with a branch of light, it is developed to form photoresist film figure 21 again.As shown in Figure 2, as the result who carries out these preparation processes, photoresist film figure 21 has oval-shaped planar outer surfaces.So oval outer surface of photoresist film figure 21 is owing to such fact, promptly because the interval (a of shading graph, b) and size (X, Y) little, the thrown light on marginal portion of photoresist film figure of the influence that makes the light beam of the mask by Fig. 1 be subjected to diffraction and interference, the marginal portion of the photoresist film figure that these are illuminated is removed in ensuing developing process.When having formed one for example during the figure of the storage electrode of DRAM element, adopt such photoresist film figure 21 can to cause a minimum about surface area of 10% to 20% of the store electricity than the desired capacitor that obtains as mask.
Therefore, an object of the present invention is to overcome the problems referred to above that run in prior art, and a kind of method of making semiconductor device is provided, this method can reduce proximity effect to greatest extent, can form the profile of a good photoresist film figure whereby.
In order to realize this purpose, form the photoresist film figure like this according to the present invention: with a branch of light a photoresist film is exposed by first mask with by second mask, and remove photoresist film exposure the zone, wherein first mask comprises a plurality ofly having predetermined live width Y and with the predetermined interval a shading graph of broad ways extends parallel each other, and second mask comprises a plurality ofly having predetermined live width X and with the predetermined interval b shading graph of extends parallel along its length each other.
The present invention is a feature with the peculiar method that comprises following step: apply photoresist film on the predetermined layer that will form figure; At first, photoresist film is exposed with a branch of light by first mask, said first mask comprises a transparent substrates, is formed with a plurality of at a distance of first preset space lengths, the first parallel shading graph (first prolonged light screenpattern) of extending of broad ways each other on this transparent substrates; Then, photoresist film is exposed with a branch of light by second mask, said second mask comprises a transparent substrates, is formed with a plurality of at a distance of second preset space lengths, parallel along its length second shading graph (second pro-longed light screen pattern) of extending each other on this transparent substrates; Then, the photoresist film that double exposes is developed to form a plurality of photoresist film figures, these photoresist film figures have the live width size of first and second shading graph of extending, and separate with first or second spacing each other.
Describe preferred enforcement of the present invention in detail by the reference accompanying drawing and can more clearly understand above-mentioned purpose of the present invention and other advantage, wherein:
Fig. 1 is perspective illustration that forms the mask of a capacitor according to prior art of an expression;
The perspective illustration of Fig. 2 photoresist film figure that to be an expression form by the mask that adopts Fig. 1;
Fig. 3 A and 3B are the perspective illustration of expression according to first and second masks of one embodiment of the present of invention;
The perspective illustration of Fig. 4 photoresist film figure that to be an expression form by first and second masks that are used in combination Fig. 3 according to the present invention;
Fig. 5 is an expression is coated with first mask of phase shift film according to the part of another embodiment of the present invention a perspective illustration.
Can understand the application of the preferred embodiment of the present invention best with reference to accompanying drawing, wherein identical and corresponding parts adopt identical label respectively.
At first, the figure shows in order to form the combination of the mask that the useful figure of semiconductor device is carried out with reference to Fig. 3 A and 3B.As shown in Figure 3A, first mask 100 comprises a transparent substrates 10, on this transparent substrates 10, be formed with a plurality ofly have live width Y, each other with the parallel shading graph 13 of predetermined space a broad ways.Fig. 3 B represents second mask 200, wherein on transparent substrates 10, be formed with a plurality ofly have live width X, each other with the parallel along its length shading graph 14 of predetermined space b.
The combination of first mask 100 and second mask 200 can cause having the overlapping zone with the identical figure of Fig. 1.
Referring now to Fig. 4, the figure shows the photoresist film figure 22 that forms by being used in combination first and second masks according to one embodiment of the present of invention.In order to form sensitization figure 22, at first with a branch of light the photoresist film that is coated on the Semiconductor substrate 20 is exposed by first mask, then expose by second mask, the photoresist film to exposure develops then.As shown in drawings, according to the present invention resulting photoresist film figure than the more approaching desired figure that obtains of the formed photoresist film figure of conventional mask that passes through to adopt Fig. 1 by the dotted line representative.
According to the present invention, have broad ways respectively and the combination of the independent mask of the sensitization figure of extension along its length can reduce basically by the caused proximity effect of conventional mask by adopting, so just can obtain the desired photoresist film figure that obtains.
Referring now to Fig. 5, the figure shows a photoresist film phase shift pattern film 15 that partly covers first mask according to another embodiment of the present invention.As shown in the drawing, the spacing a that is passed between the photoresist film figure 13 places phase shift film 15, and this phase shift film 15 is along 13 extensions of photoresist film figure and have the live width wideer than spacing a.In this respect, the photoresist film figure is placed a phase shift film 15 in every line, so that reduce the narrow interference that causes owing to spacing a to greatest extent.
Similarly, on second mask of Fig. 2, form phase shift film along its length.
As previously described, owing to regard to present circumstances, can form the desired figure that obtains, can increase for example capacitance of a storage electrodes by means of having eliminated interference by carry out re-expose with first and second masks.
In addition, use phase shift film and can increase resolution, thereby can obtain meticulousr figure according to the present invention for the desired figure that obtains as first and second masks.
After having read above-mentioned disclosure, be readily understood that further feature of the present invention disclosed herein, advantage and embodiment to those skilled in the art.Given this, although described in detail the particular embodiment of the present invention, under the prerequisite that does not break away from described and claimed marrow of the present invention and scope, can change and revise these embodiment.
Claims (4)
1. method of making semiconductor device comprises:
On a predetermined layer that will form figure, apply one deck photoetching rubber moulding; It is characterized in that:
At first photoresist film is exposed with a branch of light by first mask, said first mask comprises a transparent substrates, is formed with a plurality of at a distance of first preset space lengths, the first parallel shading graph of extending of broad ways each other on this substrate;
Then photoresist film is exposed with a branch of light by second mask, said second mask comprises a transparent substrates, is formed with a plurality of at a distance of second preset space lengths, parallel along its length second shading graph of extending each other on this substrate; With
Photoresist film to double exposure develops to form a plurality of photoresist film figures, and these photoresist film figures have the live width size of first and second shading graph of extending, and separate with first or second spacing each other.
2. method according to claim 1, it is characterized in that: said photoresist film is a positive photoetching rubber film.
3. method according to claim 1 is characterized in that:
Said first mask also comprises a plurality of phase shifting formworks, and each said phase shifting formwork forms along first shading graph of extending, and passes the first shading graph broad ways placement in every line of first spacing.
4. method according to claim 1 is characterized in that:
Said second mask also comprises a plurality of phase shifting formworks, and each said phase shifting formwork forms along second shading graph of extending, and pass first spacing in every line first shading graph place along its length.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR93031823A KR970009975B1 (en) | 1993-12-31 | 1993-12-31 | Patterning method of photoresist for charge storage electrode in the semiconductor device |
| KR93-31823 | 1993-12-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1113605A CN1113605A (en) | 1995-12-20 |
| CN1035643C true CN1035643C (en) | 1997-08-13 |
Family
ID=19374756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 94113356 Expired - Fee Related CN1035643C (en) | 1993-12-31 | 1994-12-30 | Method for the fabrication of a semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR970009975B1 (en) |
| CN (1) | CN1035643C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006350245A (en) * | 2005-06-20 | 2006-12-28 | Tokyo Ohka Kogyo Co Ltd | Photoresist film roll and method for producing the same |
| NL2004545A (en) * | 2009-06-09 | 2010-12-13 | Asml Netherlands Bv | Lithographic method and arrangement |
-
1993
- 1993-12-31 KR KR93031823A patent/KR970009975B1/en not_active IP Right Cessation
-
1994
- 1994-12-30 CN CN 94113356 patent/CN1035643C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1113605A (en) | 1995-12-20 |
| KR970009975B1 (en) | 1997-06-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 19970813 Termination date: 20100201 |