CN103560660A - Surge and ring absorbing method and device of power modulation switch of switched-mode power supply - Google Patents
Surge and ring absorbing method and device of power modulation switch of switched-mode power supply Download PDFInfo
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- CN103560660A CN103560660A CN201310549836.2A CN201310549836A CN103560660A CN 103560660 A CN103560660 A CN 103560660A CN 201310549836 A CN201310549836 A CN 201310549836A CN 103560660 A CN103560660 A CN 103560660A
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Abstract
The invention relates to a surge and ring absorbing method and device of a power modulation switch of a switched-mode power supply. The ring absorbing device comprises a switch channel composed of a delay switch and connected with a first switch or a second switch in parallel, one end of a first absorbing capacitor or one end of a second absorbing capacitor is connected in the switch channel where the delay switch is located, and the other end of the first absorbing capacitor or the other end of the second absorbing capacitor is grounded. When each switching cycle of the power modulation switch starts, the corresponding switch is in saturated conduction, the delay switch is in saturated conduction or turned off slightly later, and the first absorbing capacitor or the second absorbing capacitor is used for absorbing a periodic oscillating current and periodic oscillating voltage produced by a ring in a circuit. The surge absorbing device comprises the first absorbing capacitor and the first delay switch in the ring absorbing device; when the input end of the power modulation switch is connected to the power supply, the first absorbing capacitor participates in a surge voltage absorbing process, and after the process is finished, the corresponding switch operates and enables the first absorbing capacitor to be released and only used for absorbing the periodic ring in the future.
Description
Technical field
The present invention relates to a kind of Switching Power Supply protective device, be specifically related to absorption process and the device of a kind of Switching Power Supply power modulation switching surge ring.
Background technology
Switching Power Supply is the time ratio turning on and off by control switch, and interrupted conducting source and load, to regulate the power circuit to load supplying, be included as load the different adjustment modes such as controlled voltage, controlled current flow and controlled power are provided.In Switching Power Supply, generally include the power modulation switch that a power Transfer pipe that load is connected with power supply opens and closes, power modulation switch is the elementary cell that forms all Switching Power Supplies.When one of power modulation switch fast conducting has the input power of equipment of physical size, can there is exceeding voltage peak and the current peak of stationary value, i.e. surge moment in the inductance, the electric capacity that are connected in passage in stable state process of establishing.The transmission line of power modulation switch itself all inevitably exists lead resistance, lead-in inductance and stray capacitance, therefore when a pulse signal is after the transmission line through longer, very easily produce ringing, ringing causes producing and periodically shaking electric current and concussion voltage in circuit.The modulation of surge ring and relative switching current is the main reason of Switching Power Supply high power audio-frequency noise, this noise limit the scope of application of Switching Power Supply, and contact surge causes the voltge surge to input, is potential fault inducement.
As shown in Figure 1, in prior art, power modulation switch 1 generally includes the first interrupteur SW 1 and the second switch SW2 being connected with internal junction chalaza Ji respectively, and the first interrupteur SW 1 is gone back connected node K.A upper stray inductance L1a and upper two stray inductance L1b are connected to the first interrupteur SW 1 two ends, next stray inductance L2a and lower two stray inductance L2b are connected to second switch SW2 two ends, binding site stray inductance L3 one end is connected to the node Jo of output other end connection power modulation switch 1 outside of internal junction chalaza Ji, and node parasitic capacitance Cx is connected between internal junction chalaza Ji and grounding pin.Stray inductance La, the storage capacitor Ca that is also connected with external connection line on the node K of power modulation switch 1 outside is connected between node K and grounding pin, energy storage inductor Lb is connected between node Jo and grounding pin, parasitic capacitance Cb is connected between node Jo and grounding pin.Wherein, the first interrupteur SW 1 and second switch SW2 are semiconductor controlled switch, semiconductor controlled switch can be metal-oxide semiconductor (MOS) triode, insulated gate is controlled double pole triode and double pole triode, and the outside parasitic capacitance Cb connecting of switching node comprises possible bootstrapping load capacitance.When the input fast conducting input power of Switching Power Supply, power is along the modulated transmission of ab direction, be the source of node K side in the interrupted conducting Fig. 1 of power modulation switch 1 to the load of node Jo side, now power modulation switch 1 completes buck functionality, otherwise is boost function.
The surge that Switching Power Supply contact forms appears at node K, and when contact occurs, storage capacitor Ca, by the stray inductance La repid discharge of external connection line, produces attenuated oscillation at node K.Internal junction chalaza Ji when the surge of power modulation switch 1 inside occurs in the first interrupteur SW 1 or second switch SW2 conducting, parasitic capacitance Cx is by switch and a upper stray inductance L1a of line, upper two stray inductance L1b or next stray inductance L2a, lower two stray inductance L2b repid discharges, produces the decay that simulation waveform attenuated oscillation as shown in Figure 2 and Jo node produce measured waveform as shown in Figure 3 shake at internal junction chalaza Ji.Wherein simulation waveform is in order to produce attenuating connected in the first interrupteur SW 1 passage 500m Ω resistance, 500 Ω resistance in parallel with parasitic capacitance Cx.
In order to express easily, the Switching Power Supply of Fig. 1 is further reduced to model as shown in Figure 4, the energy that participates in ring is determined by capacitor C and step voltage.While disregarding resistance r, less inductance causes current surge excessive, but does not affect the gross energy that participates in surge ring; While considering resistance r, because the upper loss producing of the larger resistance r of electric current is larger, compare and leave that to produce the energy of ringing just lower for.Electric current and voltage can be decomposed into direct current component and ring part, and wherein direct current component is that the energy needing shifts, and only ring is partly harmful electromagnetic interference.Meanwhile, ring causes voltage or rush of current at internal junction chalaza Ji, node Jo and node K, causes device to bear excessive stresses.The surge that the Mechanical Contact occurring while being connected with the voltage source of input in prior art causes generally completes by outside absorption plant, adopts transient voltage decrease uptake diode, piezo-resistance or discharge air-gap to absorb surge energy; The ring associated with the switch motion of power modulation switch inside can adopt the inhibition schemes such as critical driven saturated, switching rate restriction.
As shown in Figure 5, adopting transient voltage decrease uptake diode is the typical scenario that absorbs input node K contact surge, specifically easy pulsactor Z1 is connected on to voltage source one side on main line on the model of Fig. 4, the rate of climb of electric current during restriction access, and transient voltage decrease uptake diode Z2 is in parallel with capacitor C, transient voltage decrease uptake diode Z2 after surpassing its breakdown voltage rating conducting to absorb instantaneous surge energy.When capacitor C is larger, while needing its energy-storage function, must adopt easy pulsactor Z1 and transient voltage decrease uptake diode Z2 to reduce voltage, rush of current, capacitor C only works when high frequency decoupling.But as shown in Figure 6, the same with all switching rate single limitation approaches, reduce switching rate and cause switching loss to increase.
Summary of the invention
The present invention is directed to the switching loss existing in existing method in prior art and increase, exist the problems such as modulated interferer problem, a kind of switch combination absorption surge that utilizes has been proposed, reduce high power audio-frequency noise, to improve absorption process, ring absorption plant, the surge absorption device of the Switching Power Supply power modulation switching surge ring of Switching Power Supply applicability, and the power modulation switch that uses ring absorption plant and surge absorption device.
Technical scheme of the present invention is as follows:
A method, its step comprises:
A) electric capacity and the first delay switch are set in power modulation switch; Described the first delay switch is connected between the input and internal junction chalaza of power modulation switch, and one end of described electric capacity is connected between described input and described the first delay switch, other end ground connection;
B) at described power modulation switch, enter in the process powering on, utilize the coupling of described the first electric capacity, make described the first delay switch and be connected to the second switch short time conducting between described internal junction chalaza and ground, between input in described power modulation switch and ground, form a low impedance path, absorb the input surge causing due to power supply contact.
An absorption process, its step comprises:
1) for step-down switching power supply, by power modulation switch internal switch, switch, produce ring in each switch periods internal junction chalaza of described power modulation switch after, immediately an electric capacity and described internal junction chalaza are connected by low-resistance, make described electric capacity play the effect of damping capacitor, and then realize the absorption of ring in described internal junction chalaza;
2) for boosted switch power supply, by power modulation switch internal switch, switch, produce ring in each switch periods internal junction chalaza of described power modulation switch before, an electric capacity and described internal junction chalaza are connected by low-resistance, make described electric capacity play the effect of damping capacitor, after ring absorbs, described electric capacity and described internal junction chalaza can be disconnected.
An absorption plant, is characterized in that: it comprises the first delay switch and electric capacity; Described the first delay switch and be connected to the input of power modulation switch and the first switch between internal junction chalaza is in parallel; One end of described electric capacity is connected to close input one side of described the first delay switch, other end ground connection; When each switch periods of described power modulation switch starts, first make described the first switch saturation conduction, then postpone to make slightly described the first delay switch saturation conduction; The internal switch element that described the first delay switch is described power modulation switch.
An absorption plant, is characterized in that: it comprises the second delay switch and electric capacity, described the second delay switch and be connected to the internal junction chalaza of power modulation switch and the second switch between grounding pin is in parallel; One end of described electric capacity is connected to close grounding pin one side of described the second delay switch, other end ground connection; When each switch periods of described power modulation switch starts, first make described second switch saturation conduction, then postpone slightly to make described the second delay switch to disconnect; The internal switch element that described the second delay switch is described power modulation switch.
Described electric capacity is Absorption Capacitance.
A kind of surge absorption device, it is characterized in that: it comprises the first delay switch, second switch, electric capacity, the 3rd switch, the 4th switch, the 5th switch, the first divider resistance and the second divider resistance, wherein said the 3rd switch, the 4th switch, the 5th switch are the internal switch element of power modulation switch; Described the first delay switch and be connected to the input of power modulation switch and the first switch between internal junction chalaza is in parallel, described second switch is connected between the internal junction chalaza and grounding pin of power modulation switch; One end of described electric capacity is connected to close input one side of described the first delay switch, and the other end is by described the 3rd switch ground connection; One end of described the 4th switch is connected between described electric capacity and the 3rd switch by described the first divider resistance, and the other end connects described the first delay switch, and described the 4th switch is for controlling the conducting of the first delay switch and cutting out; One end of described the 5th switch is connected between above-mentioned electric capacity and the 3rd switch, and the other end connects described second switch, for controlling the conducting of described second switch and closing; One end of described the second divider resistance is connected between described the 4th switch and the first dividing piezoresistance, other end ground connection.
A kind of surge absorption device arranging on ring absorption plant as claimed in claim 1 basis, it is characterized in that: it comprises the first delay switch, second switch, electric capacity, the 3rd switch, the 4th switch, the 5th switch, the first divider resistance and the second divider resistance, wherein said the first delay switch and electric capacity are arranged in described ring absorption plant, and described the 3rd switch, the 4th switch, the 5th switch are the internal switch element of power modulation switch; Described the first delay switch and be connected to the input of power modulation switch and the first switch between internal junction chalaza is in parallel, described second switch is connected between the internal junction chalaza and grounding pin of power modulation switch; One end of described electric capacity is connected to close input one side of described the first delay switch, and the other end is by described the 3rd switch ground connection; One end of described the 4th switch is connected between described electric capacity and the 3rd switch by described the first divider resistance, and the other end connects described the first delay switch, and described the 4th switch is for controlling the conducting of the first delay switch and cutting out; One end of described the 5th switch is connected between above-mentioned electric capacity and the 3rd switch, and the other end connects described second switch, for controlling the conducting of described second switch and closing; One end of described the second divider resistance is connected between described the 4th switch and the first dividing piezoresistance, other end ground connection.
Before the input of described power modulation switch switches on power, described power modulation switch is started working, make described the 3rd switch disconnection, described the 4th switch conduction, described the 5th switch conduction.
A switch, is characterized in that: it uses ring absorption plant and/or the surge absorption device as described in one of claim 6-8 as described in one of claim 3-5.
The electric capacity of described ring absorption plant and/or surge absorption device is manufactured on the sheet of described power modulation switch, and stray inductance when described electric capacity is connected with the node parasitic capacitance of described power modulation switch is as far as possible little.
Technique effect of the present invention is as follows:
A kind of ring absorption plant of the present invention, comprise the switch passage in parallel with the first switch or second switch being formed by delay switch, one end of the first Absorption Capacitance (delay switch and the first switch in parallel) or the second Absorption Capacitance (delay switch is in parallel with second switch) is connected in the switch passage at delay switch place, other end ground connection.Each switch periods at power modulation switch first makes switch saturation conduction at first, then postpone slightly make delay switch saturation conduction (delay switch and the first switch in parallel) or close (delay switch is in parallel with second switch), utilize the first Absorption Capacitance or the second Absorption Capacitance to absorb ring and in circuit, produce periodically concussion electric current and concussion voltage.Due to switch and delay switch, all with the fastest speed saturation conduction or close, therefore reduced switching loss the largelyst.And when switch saturation conduction, the voltage fluctuation on internal junction chalaza Ji there is no impact to the conducting degree of switch, thereby further reduce the total current by switch is modulated, reduce zoop.
Take delay switch and the first switch in parallel is example, after switch conduction, while postponing slightly on-delay switch, in the switch passage at the first switch place, there is no electric current, on the first Absorption Capacitance, there is no surge voltage, the first Absorption Capacitance is participated in the surge component on the switch passage that absorbs the first switch place directly, and provides another reverse absorbing path to the voltage upper punch in node parasitic capacitance, thereby has reduced voltage, the current stress of internal junction chalaza.
A kind of surge absorption device of the present invention, it comprises the first delay switch, second switch, the first Absorption Capacitance, the 3rd switch, the 4th switch, the 5th switch, the first divider resistance and the second divider resistance, and wherein the first delay switch and the first Absorption Capacitance are arranged in ring absorption plant; When the input of power modulation switch switches on power, make the 3rd switch disconnection, the 4th switch conduction, the 5th switch conduction, the first divider resistance, the second divider resistance and the first delay switch form simple voltage stabilizing circuit, by the voltage stabilization at internal junction chalaza place on burning voltage; Before power modulation switch is started working, make that the 3rd switch conduction, the 4th switch disconnect, the 5th switch disconnects, surge absoption process finishes, and the first Absorption Capacitance is by only for the absorption of ring.Because the first delay switch and the first Absorption Capacitance are the original papers of using from ring absorption plant, so the required element of surge absorption device itself reduces, and simplified circuit structure.And when the input of power modulation switch switches on power, the first Absorption Capacitance participates in the absorption process of surge voltage, after process finishes, then by the operation of switch, the first Absorption Capacitance is freed, only for the periodic ring of follow-up absorption.
Accompanying drawing explanation
Fig. 1 is the AC signal model of Switching Power Supply in prior art
Fig. 2 is that the power modulation switch of a simulation waveform produces the oscillogram of attenuated oscillation at internal junction chalaza Ji
Fig. 3 is that the step-down switching power supply of a measured waveform produces the oscillogram of decay concussion at Jo node
Fig. 4 is the further simplified model of Switching Power Supply
Fig. 5 is the simplified model that available technology adopting transient voltage decrease uptake diode absorbs input node K contact surge
Fig. 6 is the difference of employing phase-splitting driving (right part of flg) and the EMI interference strength of the step-down switching power supply that does not adopt phase-splitting driving (left hand view) on Jo node voltage, inductive current and output voltage
Fig. 7 is ring absorption plant embodiment 1 of the present invention
Fig. 8 is surge absorption device of the present invention
Fig. 9 is ring absorption plant embodiment 2 of the present invention
Figure 10 be different damping resistance R d on the power modulation switch of ring absorption plant embodiment 2 in the impact of ring
Embodiment
Below in conjunction with accompanying drawing, the present invention will be described.
In switch power integrated circuit, the switching device of power modulation switch is the array being organized together by a plurality of less switching devices, wherein each switching device is connected in parallel, the present invention carries out functional organization to this switching device array, therefrom extract minority switching device out, be organized into separately a power modulation switch that saturation current is less, the saturation current of these switching devices only needs to pass through the current component of surge ring.
When the input fast conducting input power of power modulation switch, surge absoption method step of the present invention comprises:
A) electric capacity (the first Absorption Capacitance Csw1) as shown in Figure 8 and the first delay switch sw1 are set in power modulation switch as shown in Figure 1; The first delay switch sw1 is connected between the input (node K) as shown in Figure 8 and internal junction chalaza Ji of power modulation switch, and one end of electric capacity is connected between input and the first delay switch, other end ground connection;
B) at power modulation switch, enter in the process powering on, utilize the coupling of the first electric capacity, make the first delay switch and be connected to the second switch SW2 short time conducting between internal junction chalaza and ground, between input in power modulation switch and ground, form a low impedance path, absorb the input surge causing due to power supply contact.
Ring absorption process of the present invention is:
1) for step-down switching power supply, by power modulation switch internal switch, switch, produce ring on each switch periods internal junction chalaza Ji of power modulation switch after, immediately an electric capacity (being the first Absorption Capacitance Csw1 in Fig. 7) is connected by low-resistance with internal junction chalaza Ji, make electric capacity play the effect of damping capacitor, and then realize the absorption of ring in internal junction chalaza;
2) for boosted switch power supply, by power modulation switch internal switch, switch, produce ring in each switch periods internal junction chalaza of power modulation switch before, an electric capacity (being the second Absorption Capacitance Csw2 in Fig. 9) is connected by low-resistance with internal junction chalaza Ji, make electric capacity play the effect of damping capacitor, after ring absorbs, electric capacity and internal junction chalaza Ji can be disconnected.
In above-mentioned ring absorption process, as long as switching to, internal switch can reach any one switching mode that makes electric capacity and internal junction chalaza Ji connect this purpose.
As shown in Figure 7, the power that the embodiment 1 of ring absorption plant is applied to Switching Power Supply is during along the modulated transmission of ab direction, be that the source of the interrupted conducting node K side of power modulation switch 2 is to the load of node Jo side, now power modulation switch 2 completes buck functionality, node K is input node, and node Jo is output node.The power modulation switch that adopts N channel enhancement insulated gate triode to make of take is example, on power modulation switch as shown in Figure 1 further on a stray inductance L1a be decomposed into a plurality of inductive components such as IC interior line, integrated circuit aerial lug, between node K and the first interrupteur SW 1 series connection aerial lug stray inductance L1ae and the first switch connection stray inductance L1aS.In the present embodiment, by the first switch connection stray inductance L1aS and the first interrupteur SW 1, form the first switch passage, by the first delay switch stray inductance L1as and the first delay switch sw1 second switch passage in series, second switch passage is in parallel with the first switch passage, and between the first delay switch stray inductance L1as and the first delay switch sw1, pass through the first Absorption Capacitance Csw1 ground connection.
Aerial lug stray inductance L1ae and the upper two stray inductance L1b that represent to be connected internal junction chalaza Ji interconnector stray inductance are applied to two switch passages at the first interrupteur SW 1 and the first delay switch sw1 place, in actual domain, the first interrupteur SW 1 and the first delay switch sw1 need separately independently drain electrode is connected with separately to external pin routing.The first Absorption Capacitance Csw1 manufactures on sheet, and the stray inductance in the time of need to making it be connected with node parasitic capacitance Cx during making is as far as possible little.When completing node K to the action of internal junction chalaza Ji conducting, after producing ring on each switch periods internal junction chalaza Ji of power modulation switch, wants the present embodiment first fully to drive the first interrupteur SW 1 to make its saturation conduction, then postpone slightly to make several nanoseconds (ns) the first delay switch sw1 saturation conduction, the first Absorption Capacitance Csw1 and internal junction chalaza Ji are connected by low-resistance, utilize the first Absorption Capacitance Csw1 to absorb ring and in circuit, produce periodically concussion electric current and concussion voltage.
As shown in Figure 9, the power that the embodiment 2 of ring absorption plant is applied to Switching Power Supply is during along the modulated transmission of ba direction, be that the source of the interrupted conducting node Jo side of power modulation switch 2 is to the load of node K side, now power modulation switch 2 completes boost function, node Jo is input node, and node K is output node.The present embodiment is decomposed into next stray inductance L2a aerial lug stray inductance L2ae and the second switch line stray inductance L2aS connecting between grounding pin and second switch SW2.In the present embodiment, by second switch line stray inductance L2aS and second switch SW2, form the 3rd switch passage, the second delay switch stray inductance L2as and the second delay switch sw2 the 4th switch passage in series, the 4th switch passage is in parallel with the 3rd switch passage, and between the second delay switch stray inductance L2as and the second delay switch sw2, pass through the second Absorption Capacitance Csw2 ground connection.By this lower pipe at power modulation switch, the second delay switch sw2 in parallel can better simply mode improve ring, and when its effect disconnects improving switch, the ring at node Jo place is even more important.But contrary with the first delay switch sw1 Delayed conducting in a upper embodiment, after produce ring on each switch periods internal junction chalaza Ji of power modulation switch before, first fully driving second switch SW2 makes its saturation conduction, postpone a little the second delay switch sw2 time delay is disconnected, the second Absorption Capacitance Csw2 and internal junction chalaza Ji are connected by low-resistance, make the second Absorption Capacitance Csw2 play the effect of damping capacitor.At the second delay switch sw2 time delay off period, be equivalent to the ring on node Jo to keep a damping release channel, Figure 10 has shown and under 2MHz switching frequency, has introduced the damping that different damping resistance R d plays the ring at node Jo place.
In the embodiment at above-mentioned two ring absorption plants, the essence of the first Absorption Capacitance Csw1 and the second Absorption Capacitance Csw2 is a damping capacitor, its direct current biasing keeps with input supply voltage (if ab in figure is to transferring energy always, be voltage dropping power supply) or output voltage (anti-ab is during to transferring energy, be booster power) consistent, energy on it is handled up main relevant with ring process, so the loss of this process of handling up does not cause extraneoas loss.This feature makes can utilize the first Absorption Capacitance Csw1, the first delay switch sw1 and the auxiliary input node K surge that absorbs of second switch SW2 in the embodiment of surge absorption device below.
As shown in Figure 8, in the ring absorption plant of above-described embodiment 1, make the first interrupteur SW 1 disconnect, externally between line stray inductance L1ae and internal junction chalaza Ji, retain the second switch passage that the first delay switch sw1 and the first delay switch stray inductance L1as form; One end of the first Absorption Capacitance Csw1 is connected between the first delay switch stray inductance L1as and the first delay switch sw1, and the other end is by the 3rd switch Q1 ground connection.One end of the 4th switch Q2 is connected between the first Absorption Capacitance Csw1 and the 3rd switch Q1 by the first divider resistance R1, and the other end is connected on the grid of the first delay switch sw1, for controlling the conducting of the first delay switch sw1 and closing.One end of the 5th switch Q3 is connected between the first Absorption Capacitance Csw1 and the 3rd switch Q1, and the other end is connected on the grid of second switch SW2, for controlling the conducting of second switch SW2 and closing.One end of the second divider resistance R2 is connected between the 4th switch Q2 and the first divider resistance R1, other end ground connection.
When input node K contacts with external power source, the state of chip while entering the process powering on be: the 3rd switch Q1 disconnection, the 4th switch Q2 and the 5th switch Q3 conducting.The current potential of input node K rises and makes second switch SW2 conducting through the first Absorption Capacitance Csw1 coupling, through the dividing potential drop of the first divider resistance R1 and the second divider resistance R2, makes the first delay switch sw1 conducting when the current potential of input node K surpasses certain value.The first divider resistance R1, the second divider resistance R2 and the first delay switch sw1 form simple voltage stabilizing circuit, the burning voltage of this circuit determines by the voltage ratio of the first divider resistance R1, the second divider resistance R2 and the cut-in voltage of the first delay switch sw1, and this burning voltage is withstand voltage a little less than device only.This state of the 3rd switch Q1, the 4th switch Q2 and the 5th switch Q3 needs to be adjusted into the 3rd switch Q1 conducting before power modulation switch is started working, the 4th switch Q2 and the 5th switch Q3 disconnect, by the first Absorption Capacitance Csw1 ground connection, after this, the first Absorption Capacitance Csw1 absorbs the damping that only participates in ring.
It should be pointed out that the above embodiment can make the invention of those skilled in the art's comprehend, but do not limit the present invention in any way creation.Therefore; although this specification has been described in detail the invention with reference to drawings and Examples; but; those skilled in the art are to be understood that; still can modify or be equal to replacement the invention; in a word, all do not depart from technical scheme and the improvement thereof of the spirit and scope of the invention, and it all should be encompassed in the middle of the protection range of the invention patent.
Claims (10)
1. a surge absoption method, its step comprises:
A) electric capacity and the first delay switch are set in power modulation switch; Described the first delay switch is connected between the input and internal junction chalaza of power modulation switch, and one end of described electric capacity is connected between described input and described the first delay switch, other end ground connection;
B) at described power modulation switch, enter in the process powering on, utilize the coupling of described the first electric capacity, make described the first delay switch and be connected to the second switch short time conducting between described internal junction chalaza and ground, between input in described power modulation switch and ground, form a low impedance path, absorb the input surge causing due to power supply contact.
2. a ring absorption process, its step comprises:
1) for step-down switching power supply, by power modulation switch internal switch, switch, produce ring in each switch periods internal junction chalaza of described power modulation switch after, immediately an electric capacity and described internal junction chalaza are connected by low-resistance, make described electric capacity play the effect of damping capacitor, and then realize the absorption of ring in described internal junction chalaza;
2) for boosted switch power supply, by power modulation switch internal switch, switch, produce ring in each switch periods internal junction chalaza of described power modulation switch before, an electric capacity and described internal junction chalaza are connected by low-resistance, make described electric capacity play the effect of damping capacitor, after ring absorbs, described electric capacity and described internal junction chalaza can be disconnected.
3. a ring absorption plant, is characterized in that: it comprises the first delay switch and electric capacity; Described the first delay switch and be connected to the input of power modulation switch and the first switch between internal junction chalaza is in parallel; One end of described electric capacity is connected to close input one side of described the first delay switch, other end ground connection; When each switch periods of described power modulation switch starts, first make described the first switch saturation conduction, then postpone to make slightly described the first delay switch saturation conduction; The internal switch element that described the first delay switch is described power modulation switch.
4. a ring absorption plant, is characterized in that: it comprises the second delay switch and electric capacity, described the second delay switch and be connected to the internal junction chalaza of power modulation switch and the second switch between grounding pin is in parallel; One end of described electric capacity is connected to close grounding pin one side of described the second delay switch, other end ground connection; When each switch periods of described power modulation switch starts, first make described second switch saturation conduction, then postpone slightly to make described the second delay switch to disconnect; The internal switch element that described the second delay switch is described power modulation switch.
5. a kind of ring absorption plant as described in claim 3 or 4, is characterized in that: described electric capacity is Absorption Capacitance.
6. a surge absorption device, it is characterized in that: it comprises the first delay switch, second switch, electric capacity, the 3rd switch, the 4th switch, the 5th switch, the first divider resistance and the second divider resistance, wherein said the 3rd switch, the 4th switch, the 5th switch are the internal switch element of power modulation switch; Described the first delay switch and be connected to the input of power modulation switch and the first switch between internal junction chalaza is in parallel, described second switch is connected between the internal junction chalaza and grounding pin of power modulation switch; One end of described electric capacity is connected to close input one side of described the first delay switch, and the other end is by described the 3rd switch ground connection; One end of described the 4th switch is connected between described electric capacity and the 3rd switch by described the first divider resistance, and the other end connects described the first delay switch, and described the 4th switch is for controlling the conducting of the first delay switch and cutting out; One end of described the 5th switch is connected between above-mentioned electric capacity and the 3rd switch, and the other end connects described second switch, for controlling the conducting of described second switch and closing; One end of described the second divider resistance is connected between described the 4th switch and the first dividing piezoresistance, other end ground connection.
7. the surge absorption device arranging on ring absorption plant as claimed in claim 1 basis, it is characterized in that: it comprises the first delay switch, second switch, electric capacity, the 3rd switch, the 4th switch, the 5th switch, the first divider resistance and the second divider resistance, wherein said the first delay switch and electric capacity are arranged in described ring absorption plant, and described the 3rd switch, the 4th switch, the 5th switch are the internal switch element of power modulation switch; Described the first delay switch and be connected to the input of power modulation switch and the first switch between internal junction chalaza is in parallel, described second switch is connected between the internal junction chalaza and grounding pin of power modulation switch; One end of described electric capacity is connected to close input one side of described the first delay switch, and the other end is by described the 3rd switch ground connection; One end of described the 4th switch is connected between described electric capacity and the 3rd switch by described the first divider resistance, and the other end connects described the first delay switch, and described the 4th switch is for controlling the conducting of the first delay switch and cutting out; One end of described the 5th switch is connected between above-mentioned electric capacity and the 3rd switch, and the other end connects described second switch, for controlling the conducting of described second switch and closing; One end of described the second divider resistance is connected between described the 4th switch and the first dividing piezoresistance, other end ground connection.
8. a kind of surge absorption device as described in claim 6 or 7, it is characterized in that: before the input of described power modulation switch switches on power, described power modulation switch is started working, make described the 3rd switch disconnection, described the 4th switch conduction, described the 5th switch conduction.
9. a power modulation switch, is characterized in that: it uses ring absorption plant and/or the surge absorption device as described in one of claim 6-8 as described in one of claim 3-5.
10. a kind of power modulation switch as claimed in claim 9, it is characterized in that: the electric capacity of described ring absorption plant and/or surge absorption device is manufactured on the sheet of described power modulation switch, stray inductance when described electric capacity is connected with the node parasitic capacitance of described power modulation switch is as far as possible little.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310549836.2A CN103560660B (en) | 2013-11-07 | 2013-11-07 | The absorption process of a kind of Switching Power Supply algorithm for power modulation switching surge ring and device |
Applications Claiming Priority (1)
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| CN201310549836.2A CN103560660B (en) | 2013-11-07 | 2013-11-07 | The absorption process of a kind of Switching Power Supply algorithm for power modulation switching surge ring and device |
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| CN106605167A (en) * | 2014-09-02 | 2017-04-26 | 高通股份有限公司 | Actuator ring characteristic measurement method |
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| CN103560660B (en) | 2016-08-24 |
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