CN103556386A - Chain scission prevention laser monitoring device - Google Patents
Chain scission prevention laser monitoring device Download PDFInfo
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- CN103556386A CN103556386A CN201310568824.4A CN201310568824A CN103556386A CN 103556386 A CN103556386 A CN 103556386A CN 201310568824 A CN201310568824 A CN 201310568824A CN 103556386 A CN103556386 A CN 103556386A
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Abstract
The invention relates to a chain scission prevention laser monitoring device which comprises at least two mounting brackets, wherein the two mounting brackets are arranged between one warp knitting machine and one cloth rolling machine; a laser emitter is mounted at one end of each of the mounting brackets, and a laser receiver is mounted at the other end of each of the mounting brackets; the laser receivers are connected with controllers. The invention takes the chain scission prevention laser monitoring device of the warp knitting machine in one embodiment, but the application occasions of the chain scission prevention laser monitoring device is not limited to the field of the warp knitting machine, and the chain scission prevention laser monitoring device disclosed by the invention can be applied to occasions related to winding devices. Compared with the prior art, the chain scission prevention laser monitoring device is reasonable in design, simple in structure and wide in application range, for example, the warp knitting machine has the functions of both sound-light alarm and immediate halt when the rolling chain of the cloth rolling machine is broken or the rolling operation fails. The communication signals of the chain scission prevention laser monitoring device are compatible with those of the warp knitting machine, the laser alarm property is stable and the anti-interference capacity is strong, the technical defects of the current advanced multi-axial warp knitting machine are overcome, the fabric abandonment phenomenon is avoided, the fabric waste and loss are reduced, and the normal and efficient production of the fabric is ensured.
Description
Technical field
The present invention relates to laser alarm installation, in particular to a kind of anti-chain rupture laser monitor device.
Background technology
At present; because existing warp knitting machine self is not equipped with batcher chain rupture alarm automatic stop arrangement; when the fracture of batcher chain drive-belt or generation operation troubles; warp knitting machine can not autostop; must rely on operator to find that voluntarily when batcher does not have normal rolling, carrying out manual intervention could shut down; this technological deficiency of existing warp knitting machine, will cause fabric to be scrapped, and cause wasting phenomenon.
The patent No. is the crashproof laser alarm installation that the Chinese utility model patent of ZL201120471551.8 discloses a kind of rubbertyred container gantry crane.The utility model comprises saddle beam and strut, rubbertyred container gantry crane both sides arrange respectively left and right guide rail, described guide rails assembling is between saddle beam and strut, by left and right motor-driven left and right chain, along left and right guide rail, arranged respectively, left chain arranges sensor emission end, and right chain arranges sensor receiving terminal.The utility model is a kind of based on laser induced safety alarm device, it can arrange according to the container stacking actual height in stockyard the position of laser sensor, when driver is during in box operation, when its rise of suspender is inadequate, its energy automatic alarm, remind driver to take brake measure, thereby prevent from touching the generation of case accident, the active safety performance while improving operation.But the complex structure of this utility model, can only automatic alarm and remind driver to take brake measure, can not automatically take brake measure, is not therefore suitable for the workplace of the batcher chain rupture automatic stop in warp knitting machine.
Publication number is that CN103049973A discloses the operation of a kind of high-tension line and puts external force method for early warning.To be realized by following methods: on high-tension line one end steel tower of needs monitoring, install and fix Laser emission end, laser warning main control system and gsm wireless network acceptance transmitting all-in-one, lower 5 meters, 6 meters, 8.5 meters positions of power transmission line sag between laser beam horizontal aligument two towers of Laser emission end; Corresponding laser receiving terminal is installed on the other end steel tower of high-tension line, corresponding with Laser emission end, the laser beam of transmitting can be received; Beneficial effect is: what can prevent to greatest extent the generation of the stolen phenomenon of shaft tower or other external force touches phenomenon by mistake, and plays early warning effect in the very first time.When administrative staff or Control Room are deployed troops on garrison duty instruction to laser warning main control system by mobile phone or computer after, system enters duty, once there is 5 meters of object proximity high-voltage lines, 6 meters, trigger alarm during the warning distance value of 8.5 meters, on-the-spot loudspeaker sends audio alarm, and " Keep Clear-High Voltage, take care " voice message, main frame is simultaneously by warning message, comprise tower name, position, risk distance value, by GSM wireless network, accept transmitting all-in-one and send to related management personnel, administrative staff can directly carry out the long-range prompting of propagandaing directed to communicate, or realize networking with electric power 110 and dispose.Visible, this method for early warning also can only automatic alarm and is reminded related management personnel to take further Disposal Measures, for the touching phenomenon and can not automatically take instant disposal of the generation of the stolen phenomenon of shaft tower or other external force by mistake, be not therefore suitable for the workplace of the batcher chain rupture automatic stop in warp knitting machine yet.
Summary of the invention
Above-mentioned deficiency and defect based on prior art, the invention provides a kind of anti-chain rupture laser monitor device, be intended to solve deficiency of the prior art and real-time online automatic monitoring device is provided, it should be noted that, the batcher chain rupture monitoring that the present invention is usingd in warp knitting machine is as embodiment, but its application scenario is not limited to this field, the present invention all can be used in all workplaces that relates to wrap-up.With regard to warp knitting machine Application Areas; the present invention carries out Realtime Alerts when the batcher chain in warp knitting machine fracture is occurred to or occurs operation troubles synchronizes with shutdown, after batcher chain fault restoration, can recover by SR the normal rolling work of batcher.For this reason, the present invention adopts following technical scheme.
A chain rupture laser monitor device, comprises two mounting brackets, wherein: described mounting bracket is arranged between warp knitting machine and batcher, and generating laser is equipped with in mounting bracket one end, and the other end is equipped with laser pickoff, and laser pickoff is connected with controller.
Preferably, described generating laser is provided with relay indicating light.
In above-mentioned arbitrary scheme, preferably, described laser pickoff is provided with relay indicating light.
In above-mentioned arbitrary scheme, preferably, also comprise communication cable.
In above-mentioned arbitrary scheme, preferably, described two mounting brackets are fixedly mounted on respectively the sidewall two ends of the longitudinal bottom of drive chain case of batcher.
In above-mentioned arbitrary scheme, preferably, described generating laser and laser pickoff are arranged on same straight line in opposite directions, and the laser beam of transmitting can be received.
In above-mentioned arbitrary scheme, preferably, described laser beam is positioned at the fabric below of the traction roller that detours.
In above-mentioned arbitrary scheme, preferably, described controller comprises signaling control unit.
In above-mentioned arbitrary scheme, preferably, described signaling control unit is connected with the relay of controlling warp knitting machine operation.
In above-mentioned arbitrary scheme, preferably, described signaling control unit is also connected with alarm.
In above-mentioned arbitrary scheme, preferably, described signaling control unit comprises PLC.
In above-mentioned arbitrary scheme, preferably, described alarm is audible-visual annunciator.
In above-mentioned arbitrary scheme, preferably, described generating laser is gas laser.
In above-mentioned arbitrary scheme, preferably, described gas laser is atomic gas laser.
In above-mentioned arbitrary scheme, preferably, described atomic gas laser is He-Ne laser.
In above-mentioned arbitrary scheme, preferably, described atomic gas laser is metallic vapour atomic laser.
In above-mentioned arbitrary scheme, preferably, described metallic vapour atomic laser is fine copper steam atomic laser.
In above-mentioned arbitrary scheme, preferably, described metallic vapour atomic laser is golden steam atomic laser.
In above-mentioned arbitrary scheme, preferably, described metallic vapour atomic laser is lead steam atomic laser.
In above-mentioned arbitrary scheme, preferably, described metallic vapour atomic laser is aluminium steam atomic laser.
In above-mentioned arbitrary scheme, preferably, described metallic vapour atomic laser is manganese steam atomic laser.
In above-mentioned arbitrary scheme, preferably, described gas laser is molecular gas laser.
In above-mentioned arbitrary scheme, preferably, described molecular gas laser is carbon dioxide laser.
In above-mentioned arbitrary scheme, preferably, described molecular gas laser is CO laser.
In above-mentioned arbitrary scheme, preferably, described molecular gas laser is nitrogen laser instrument.
In above-mentioned arbitrary scheme, preferably, described molecular gas laser is oxygen laser instrument.
In above-mentioned arbitrary scheme, preferably, described molecular gas laser is nitrous oxide laser instrument.
In above-mentioned arbitrary scheme, preferably, described molecular gas laser is water-vapour laser.
In above-mentioned arbitrary scheme, preferably, described molecular gas laser is excimer laser.
In above-mentioned arbitrary scheme, preferably, described quasi-molecule is rare gas quasi-molecule.
In above-mentioned arbitrary scheme, preferably, described rare gas quasi-molecule is helium.
In above-mentioned arbitrary scheme, preferably, described rare gas quasi-molecule is neon.
In above-mentioned arbitrary scheme, preferably, described rare gas quasi-molecule is argon.
In above-mentioned arbitrary scheme, preferably, described rare gas quasi-molecule is krypton.
In above-mentioned arbitrary scheme, preferably, described rare gas quasi-molecule is xenon.
In above-mentioned arbitrary scheme, preferably, described rare gas quasi-molecule is radon.
In above-mentioned arbitrary scheme, preferably, described rare gas quasi-molecule is Uuo.
In above-mentioned arbitrary scheme, preferably, described quasi-molecule is rare gas oxide quasi-molecule.
In above-mentioned arbitrary scheme, preferably, described rare gas oxide quasi-molecule is oxidation helium.
In above-mentioned arbitrary scheme, preferably, described rare gas oxide quasi-molecule is oxidation neon.
In above-mentioned arbitrary scheme, preferably, described rare gas oxide quasi-molecule is oxidation argon.
In above-mentioned arbitrary scheme, preferably, described rare gas oxide quasi-molecule is krypton oxide.
In above-mentioned arbitrary scheme, preferably, described rare gas oxide quasi-molecule is xenon oxide.
In above-mentioned arbitrary scheme, preferably, described rare gas oxide quasi-molecule is oxidation radon.
In above-mentioned arbitrary scheme, preferably, described rare gas oxide quasi-molecule is oxidation Uuo.
In above-mentioned arbitrary scheme, preferably, described quasi-molecule is metal vapors-rare gas quasi-molecule.
In above-mentioned arbitrary scheme, preferably, described metal vapors-rare gas quasi-molecule is xenon sodium.
In above-mentioned arbitrary scheme, preferably, described quasi-molecule is rare gas list halide quasi-molecule.
In above-mentioned arbitrary scheme, preferably, described rare gas list halide quasi-molecule is xenon fluoride.
In above-mentioned arbitrary scheme, preferably, described rare gas list halide quasi-molecule is argon fluoride.
In above-mentioned arbitrary scheme, preferably, described rare gas list halide quasi-molecule is KrF.
In above-mentioned arbitrary scheme, preferably, described rare gas list halide quasi-molecule is chlorination xenon.
In above-mentioned arbitrary scheme, preferably, described rare gas list halide quasi-molecule is bromination xenon.
In above-mentioned arbitrary scheme, preferably, described rare gas list halide quasi-molecule is iodate xenon.
In above-mentioned arbitrary scheme, preferably, described rare gas list halide quasi-molecule is chlorination krypton.
In above-mentioned arbitrary scheme, preferably, described quasi-molecule is metal halide quasi-molecule.
In above-mentioned arbitrary scheme, preferably, described metal halide quasi-molecule is mercury chloride.
In above-mentioned arbitrary scheme, preferably, described metal halide quasi-molecule is mercuric bromide.
In above-mentioned arbitrary scheme, preferably, described quasi-molecule is metal quasi-molecule.
In above-mentioned arbitrary scheme, preferably, described metal quasi-molecule is sodium quasi-molecule.
In above-mentioned arbitrary scheme, preferably, described gas laser is ion gas laser.
In above-mentioned arbitrary scheme, preferably, described ion gas laser is argon ion laser.
In above-mentioned arbitrary scheme, preferably, described ion gas laser is helium cadmium laser.
In above-mentioned arbitrary scheme, preferably, described ion gas laser is krypton ion laser.
In above-mentioned arbitrary scheme, preferably, described ion gas laser is oxonium ion laser instrument.
In above-mentioned arbitrary scheme, preferably, described ion gas laser is xenon ion laser instrument.
In above-mentioned arbitrary scheme, preferably, described gas laser is mixed gas laser.
In above-mentioned arbitrary scheme, preferably, described generating laser is solid state laser.
In above-mentioned arbitrary scheme, preferably, described solid state laser is ruby laser.
In above-mentioned arbitrary scheme, preferably, described solid state laser is Nd:YAG(neodymium-doped yttrium-aluminum garnet) laser instrument.
In above-mentioned arbitrary scheme, preferably, described solid state laser is Nd:YVO4(Nd-doped yttrium vanadate) laser instrument.
In above-mentioned arbitrary scheme, preferably, described solid state laser is that Yb:YAG(mixes ytterbium yttrium-aluminium-garnet) laser instrument.
In above-mentioned arbitrary scheme, preferably, described solid state laser is titanium sapphire laser device.
In above-mentioned arbitrary scheme, preferably, described solid state laser is amorphous laser.
In above-mentioned arbitrary scheme, preferably, described amorphous laser is neodymium glass laser.
In above-mentioned arbitrary scheme, preferably, described generating laser is liquid laser.
In above-mentioned arbitrary scheme, preferably, described generating laser is semiconductor laser.
In above-mentioned arbitrary scheme, preferably, described semiconductor laser is heterostructure laser.
In above-mentioned arbitrary scheme, preferably, described semiconductor laser is strip structure laser instrument.
In above-mentioned arbitrary scheme, preferably, described semiconductor laser is GaAIAs/GaAs laser instrument.
In above-mentioned arbitrary scheme, preferably, described semiconductor laser is InGaAsP/InP laser instrument.
In above-mentioned arbitrary scheme, preferably, described semiconductor laser is visible laser.
In above-mentioned arbitrary scheme, preferably, described semiconductor laser is far-infrared laser.
In above-mentioned arbitrary scheme, preferably, described semiconductor laser is dynamic single mode laser.
In above-mentioned arbitrary scheme, preferably, described semiconductor laser is distributed feedback laser.
In above-mentioned arbitrary scheme, preferably, described semiconductor laser is quantum-well laser.
In above-mentioned arbitrary scheme, preferably, described semiconductor laser is surface emitting laser.
In above-mentioned arbitrary scheme, preferably, described semiconductor laser is micro-cavity laser.
In above-mentioned arbitrary scheme, preferably, described generating laser is free electron laser.
In above-mentioned arbitrary scheme, preferably, described generating laser is digital laser.
The present invention compared with prior art; reasonable in design, simple in structure, applied range; during as the rolling roller chain breakage of warp knitting machine in there is batcher or rolling operation troubles, have sound and light alarm and instant stopping function concurrently; communication signal of the present invention is realized with warp knitting machine communication signal compatible; stable performance and the antijamming capability of laser warning are strong; solved the technological deficiency of current advanced multiple-axial warp knitting machine; avoided fabric to scrap phenomenon; reduce fabric waste and loss, guaranteed normal, the High-efficient Production of fabric.
Accompanying drawing explanation
Fig. 1 is anti-chain rupture laser monitor apparatus structure schematic diagram of the present invention.
Fig. 2 is the front view of the structural representation embodiment illustrated in fig. 1 of anti-chain rupture laser monitor device of the present invention.
Fig. 3 is the top view of the structural representation embodiment illustrated in fig. 1 of anti-chain rupture laser monitor device of the present invention.
Description of reference numerals:
1 generating laser; 2 laser pickoffs; 3 relay indicating lights; 4 communication cables; 5 mounting brackets; 6 fabrics; 7 traction rollers; 8 rolling rollers; 9 chains; 10 drive chain cases; 11 batchers; 12 warp knitting machines.
The specific embodiment
To describe now according to of the present invention preferred but nonrestrictive embodiment will contribute to understand the present invention like this.
The following description is only exemplary and be not in order to limit the disclosure, application or purposes in essence.Should be understood that, in whole accompanying drawings, corresponding Reference numeral represents identical or corresponding parts and feature.
Embodiment 1:
As shown in Figure 1, a kind of anti-chain rupture laser monitor device, comprise two mounting brackets 5, wherein: described mounting bracket 5 is arranged between warp knitting machine 12 and batcher 11, generating laser 1 is equipped with in mounting bracket 5 one end, the other end is equipped with laser pickoff 2, laser pickoff 2 is connected with controller, generating laser 1 and laser pickoff 2 are equipped with relay indicating light 3, also comprise communication cable 4, two mounting brackets 5 are fixedly mounted on respectively the sidewall two ends of drive chain case 10 longitudinal bottoms of batcher 11, generating laser 1 is arranged on same straight line in opposite directions with laser pickoff 2, the laser beam of transmitting can be received, described laser beam is positioned at fabric 6 belows of the traction roller 7 that detours, described controller comprises signaling control unit, described signaling control unit is connected with the relay of controlling warp knitting machine 12 operations, described signaling control unit is also connected with alarm, described signaling control unit comprises PLC, described alarm is audible-visual annunciator, generating laser 1 is He-Ne laser.
Operation principle of the present invention: warp knitting machine 12 is in normal productive process, when there are suddenly to drive in batcher 11 chain 9 fractures of rolling roller 8 operations or breaking down, normally rolling of batcher 11, fabric 6 can relax, trigger immediately the concurrent visual alarm of speaking of apparatus of the present invention, PLC sends in time control signal and warp knitting machine 12 communication contacts and cuts off machine power and shut down in time, operating personnel can understand in time according to the operation screen warning message of warp knitting machine 12 fault message of batcher 11, after maintenance personal is by the troubleshooting of batcher 11, can press the normal rolling production that SR recovers warp knitting machine 12 and batcher 11.
Embodiment 2:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is fine copper steam atomic laser.
Embodiment 3:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is golden steam atomic laser.
Embodiment 4:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is lead steam atomic laser.
Embodiment 5:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is aluminium steam atomic laser.
Embodiment 6:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is manganese steam atomic laser.
Embodiment 7:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is carbon dioxide laser.
Embodiment 8:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is CO laser.
Embodiment 9:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is nitrogen laser instrument.
Embodiment 10:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is oxygen laser instrument.
Embodiment 11:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is nitrous oxide laser instrument.
Embodiment 12:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is water-vapour laser.
Embodiment 13:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is helium excimer laser.
Embodiment 14:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is neon excimer laser.
Embodiment 15:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is argon excimer laser.
Embodiment 16:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is krypton excimer laser.
Embodiment 17:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is xenon excimer laser.
Embodiment 18:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is radon excimer laser.
Embodiment 19:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is Uuo excimer laser.
Embodiment 20:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is oxidation helium excimer laser.
Embodiment 21:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is oxidation neon excimer laser.
Embodiment 22:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is oxidation argon excimer laser.
Embodiment 23:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is krypton oxide excimer laser.
Embodiment 24:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is xenon oxide excimer laser.
Embodiment 25:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is oxidation radon excimer laser.
Embodiment 26:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is oxidation Uuo excimer laser.
Embodiment 27:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is xenon sodium excimer laser.
Embodiment 28:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is xenon fluoride excimer laser.
Embodiment 29:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is argon fluoride excimer laser device.
Embodiment 30:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is krypton fluoride excimer laser.
Embodiment 31:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is xenon chloride excimer laser.
Embodiment 32:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is bromination xenon excimer laser.
Embodiment 33:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is iodate xenon excimer laser.
Embodiment 34:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is krypton chloride excimer laser.
Embodiment 35:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is mercury chloride excimer laser.
Embodiment 36:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is mercuric bromide excimer laser.
Embodiment 37:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is sodium excimer laser.
Embodiment 38:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is argon ion laser.
Embodiment 39:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is helium cadmium laser.
Embodiment 40:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is krypton ion laser.
Embodiment 41:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is oxonium ion laser instrument.
Embodiment 42:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is xenon ion laser instrument.
Embodiment 43:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is mixed gas laser.
Embodiment 44:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is ruby laser.
Embodiment 45:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is Nd:YAG(neodymium-doped yttrium-aluminum garnet) laser instrument.
Embodiment 46:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is Nd:YVO4(Nd-doped yttrium vanadate) laser instrument.
Embodiment 47:
A chain rupture laser monitor device, similar to embodiment 1, difference is, generating laser 1 is mixed ytterbium yttrium-aluminium-garnet for Yb:YAG() laser instrument.
Embodiment 48:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is titanium sapphire laser device.
Embodiment 49:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is neodymium glass laser.
Embodiment 50:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is liquid laser.
Embodiment 51:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is heterostructure laser.
Embodiment 52:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is strip structure laser instrument.
Embodiment 53:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is GaAIAs/GaAs laser instrument.
Embodiment 54:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is InGaAsP/InP laser instrument.
Embodiment 55:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is visible laser.
Embodiment 56:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is far-infrared laser.
Embodiment 57:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is dynamic single mode laser.
Embodiment 58:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is distributed feedback laser.
Embodiment 59:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is quantum-well laser.
Embodiment 60:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is surface emitting laser.
Embodiment 61:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is micro-cavity laser.
Embodiment 62:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is free electron laser.
Embodiment 63:
A chain rupture laser monitor device, similar to embodiment 1, difference is that generating laser 1 is digital laser.
Although at length disclose the present invention with reference to accompanying drawing, it should be understood that these descriptions are only exemplary, be not used for limiting application of the present invention.Protection scope of the present invention is limited by accessory claim, and can be included in pin various modification made for the present invention, remodeling and equivalents in the situation that does not depart from protection domain of the present invention and spirit.
Claims (10)
1. an anti-chain rupture laser monitor device, comprise at least two mounting brackets (5), it is characterized in that: mounting bracket (5) is arranged between warp knitting machine (12) and batcher (11), generating laser (1) is equipped with in mounting bracket (5) one end, the other end is equipped with laser pickoff (2), and laser pickoff (2) is connected with controller.
2. anti-chain rupture laser monitor device as claimed in claim 1, is characterized in that: generating laser (1) is provided with relay indicating light (3).
3. anti-chain rupture laser monitor device as claimed in claim 2, is characterized in that: laser pickoff (2) is provided with relay indicating light (3).
4. anti-chain rupture laser monitor device as claimed in claim 3, is characterized in that: also comprise communication cable (4).
5. anti-chain rupture laser monitor device as claimed in claim 4, is characterized in that: mounting bracket (5) is fixedly mounted on respectively the sidewall two ends of the longitudinal bottom of drive chain case (10) of batcher (11).
6. anti-chain rupture laser monitor device as claimed in claim 5, is characterized in that: generating laser (1) is arranged on same straight line in opposite directions with laser pickoff (2), and the laser beam of transmitting can be received.
7. anti-chain rupture laser monitor device as claimed in claim 6, is characterized in that: described laser beam is positioned at fabric (6) below of the traction roller that detours (7).
8. anti-chain rupture laser monitor device as claimed in claim 7, is characterized in that: described controller comprises signaling control unit.
9. anti-chain rupture laser monitor device as claimed in claim 8, is characterized in that: described signaling control unit is connected with the relay of controlling warp knitting machine (12) operation.
10. anti-chain rupture laser monitor device as claimed in claim 9, is characterized in that: described signaling control unit is also connected with alarm.
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| CN201310568824.4A CN103556386A (en) | 2013-11-15 | 2013-11-15 | Chain scission prevention laser monitoring device |
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