CN103553047A - Method and system for producing polycrystalline silicon product in reactor - Google Patents

Method and system for producing polycrystalline silicon product in reactor Download PDF

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Publication number
CN103553047A
CN103553047A CN201310544194.7A CN201310544194A CN103553047A CN 103553047 A CN103553047 A CN 103553047A CN 201310544194 A CN201310544194 A CN 201310544194A CN 103553047 A CN103553047 A CN 103553047A
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gas
reaction chamber
inlet mouth
mole
reactor
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CN201310544194.7A
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代冰
胡碧波
汪晨
徐振宇
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SUZHOU XIEXIN INDUSTRIAL APPLICATION RESEARCH INSTITUTE Co Ltd
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SUZHOU XIEXIN INDUSTRIAL APPLICATION RESEARCH INSTITUTE Co Ltd
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Abstract

The invention relates to a method for producing a polycrystalline silicon product in a reactor. The reactor comprises a reaction chamber and a gas distribution unit used for evenly distributing a gas into the reaction chamber, wherein the reaction chamber comprises at least one reaction chamber wall. The method is characterized by comprising the steps of feeding and transmitting a first gas to the reaction chamber through first-layer gas inlets of the gas distribution unit; feeding and transmitting a second gas to the reaction chamber through second-layer gas inlets of the gas distribution unit; feeding and transmitting a third gas to the reaction chamber through third-layer gas inlets of the gas distribution unit; and contacting silicon particles with a thermally decomposed silicon compound in the reaction chamber so as to deposit silicon onto silicon particles and increase the particle size. Under the condition that the reaction space in a fluidized bed is not influenced, the silicon deposition quantity of the reactor wall can be reduced, the reaction efficiency can be improved, and the production cost can be lowered.

Description

A kind of for produce the method and system of polysilicon product at reactor
[technical field]
The present invention relates to field of polysilicon production, particularly a kind of for produce the method and system of polysilicon product at reactor.
[background technology]
Fluidized-bed reactor is used for implementing heterogeneous reaction.In typical fluidized bed reactor system, fluid is by the granulated material bed of the product pellet of catalyzer or growth for example.The stream of fluid makes the bed of granulated material in reactor, become fluidisation.
In many fluidized bed reactor systems, especially at the materials chemistry from fluid-phase, decompose to form in the system of solid material, solid may deposit on the wall of reactor.Wall settling often changes the geometrical shape of reactor, and this may reduce reactor performance.In addition, part wall settling may come off and fall reactor bottom from reactor wall.Reactor assembly usually must quit work to remove the settling coming off.In order to prevent that reactor from quitting work out of turn, settling must be removed from reactor wall etching termly, and reactor must clean, thereby has reduced the productivity of reactor.Especially serious in the fluidized bed reactor system that these problems are used at production polysilicon.
Therefore, need a kind of reactor assembly and method that limits or reduce the production polysilicon of the sedimental amount forming on reactor wall.
[summary of the invention]
Based on this, be necessary to provide a kind of for produce method and the fluidised bed system of polysilicon product at reactor.
For this reason, propose a kind of for produce the method for polysilicon product at reactor, this reactor comprise reaction chamber and for by gas uniform be distributed to the gas distribution unit of reaction chamber, described reaction chamber comprises at least one reaction chamber wall, described method comprises:
By the first gas via the first layer inlet mouth feeding of described gas distribution unit and be delivered to reaction chamber;
By the second gas via the second layer inlet mouth feeding of described gas distribution unit and be delivered to reaction chamber;
By the 3rd gas via the 3rd layer of inlet mouth feeding of described gas distribution unit and be delivered to reaction chamber;
And, silicon particle is contacted in reaction chamber, so that siliceous deposits is to silicon particle and increase granularity with heat decomposable silicon compound;
Wherein,
Described the first layer inlet mouth, second layer inlet mouth and the 3rd layer of inlet mouth are successively set on described gas distribution unit from outside to inside;
Described the first gas, the second gas and the 3rd gas are the gas composition that comprises hydrogen and heat decomposable gaseous silicon compound by reactor; And the hydrogen content in the first gas, the second gas and the 3rd gas reduces successively, and the gas composition of heat decomposable gaseous silicon compound raises successively.
In preferred embodiment, the gas composition that described the first gas comprises 97.5 to 98.5 % by mole of hydrogen and 1.5 to 2.5 % by mole of heat decomposable gaseous silicon compounds;
The gas composition that described the second gas comprises 60 to 80 % by mole of hydrogen and 20 to 40 % by mole of heat decomposable gaseous silicon compounds;
The gas composition that described the 3rd gas comprises 10 to 20 % by mole of hydrogen and 80 to 90 % by mole of heat decomposable gaseous silicon compounds.
In preferred embodiment, the lip-deep temperature of described reactor is 800 to 1400 degrees Celsius.
In preferred embodiment, described heat decomposable compound is selected from silane, trichlorosilane and composition thereof.
The present invention also proposes a kind of for produce a kind of fluidized bed reactor system of method of polysilicon product at reactor, comprise reaction chamber and for by gas uniform be distributed to the gas distribution unit of reaction chamber, described reaction chamber comprises at least one reaction chamber wall, described gas distribution unit at least comprises being communicated with the first gas compartment of setting gradually from outside to inside and for delivery of the first layer inlet mouth of the first gas, be communicated with the second gas compartment and for delivery of the second layer inlet mouth of the second gas and be communicated with the 3rd gas compartment and for delivery of the 3rd layer of inlet mouth of the 3rd gas,
Described the first gas, the second gas and the 3rd gas are the gas composition that comprises hydrogen and heat decomposable gaseous silicon compound by reactor; And the hydrogen content in the first gas, the second gas and the 3rd gas reduces successively, and the gas composition of heat decomposable gaseous silicon compound raises successively.
In preferred embodiment, the gas composition that described the first gas comprises 97.5 to 98.5 % by mole of hydrogen and 1.5 to 2.5 % by mole of heat decomposable gaseous silicon compounds;
The gas composition that described the second gas comprises 60 to 80 % by mole of hydrogen and 20 to 40 % by mole of heat decomposable gaseous silicon compounds;
The gas composition that described the 3rd gas comprises 10 to 20 % by mole of hydrogen and 80 to 90 % by mole of heat decomposable gaseous silicon compounds.
In preferred embodiment, the lip-deep temperature of described reactor is 800 to 1200 degrees Celsius; Described heat decomposable compound is selected from silane, trichlorosilane and composition thereof.
In preferred embodiment, described gas distribution unit also comprises:
The first gas compartment, the second gas compartment, the 3rd gas compartment are not connected.
In preferred embodiment, described the first layer inlet mouth, second layer inlet mouth or the 3rd layer of inlet mouth are spaced and are formed by circular port.
In preferred embodiment, described the first layer inlet mouth, second layer inlet mouth or the 3rd layer of inlet mouth are annulus.
Present embodiment for producing the method for polysilicon product at reactor and the beneficial effect of fluidised bed system is as follows: the siliceous deposits amount that can reduce reactor wall in the situation that not affecting reaction compartment in fluidized-bed, improve reaction efficiency, reduce manufacturing cost.
[accompanying drawing explanation]
Fig. 1 is the reactor schematic diagram of present embodiment;
Fig. 2 is the embodiment schematic diagram of gas distribution unit of the reactor of present embodiment;
Fig. 3 is the embodiment schematic diagram of gas distribution unit air inlet layer of the reactor of present embodiment;
Fig. 4 is the another embodiment schematic diagram of gas distribution unit air inlet layer of the reactor of present embodiment.
[embodiment]
Below in conjunction with accompanying drawing 1, to accompanying drawing 4, describe method and fluidised bed system for producing polysilicon product at reactor in detail.
Fluidized bed reactor system described herein, now referring to Fig. 1, this reactor assembly 10, comprise reaction chamber 20 and for by gas uniform be distributed to the gas distribution unit 30 of reaction chamber, described reaction chamber comprises at least one reaction chamber wall 21, and the lip-deep temperature of described reactor is 800 to 1200 degrees Celsius.
Gas distribution unit 30 is shown in further detail in Fig. 2.Gas distribution unit 30 is suitable for the first gas, the second gas and the 3rd gas distribution to arrive fluidized-bed reactor, is particularly suited for carrier gases and thermal decomposition gas distribution to arrive fluidized-bed reactor.Gas distribution unit 30 at least comprise being communicated with the first gas compartment 41 of setting gradually from outside to inside and for delivery of the first layer inlet mouth 31 of the first gas, be communicated with the second gas compartment 42 and for delivery of the second layer inlet mouth 32 of the second gas and be communicated with the 3rd gas compartment 43 and for delivery of the 3rd layer of inlet mouth 43 of the 3rd gas.
Reactor assembly of the present invention also comprises that product extraction tube extends through gas distribution unit 30.Product pellet can extract and be transferred to product stock device from pipe.Waste gas leaves reaction chamber 10, can be introduced in other processing unit.
Wherein the first gas compartment 41, the second gas compartment 42, the 3rd gas compartment 43 are respectively used to provide the first gas, the second gas and the 3rd gas, and not connected.
" the first gas " " second gas " using in the present invention and " the 3rd gas " are the gas of not identical composition.The first gas, the second gas and the 3rd gas can comprise multiple gaseous compound, as long as the quality of at least one compound in the first gas forms or mole composition is different from the composition of that compound in the second gas.The first gas, the second gas and the 3rd gas are the gas composition that comprises hydrogen and heat decomposable gaseous silicon compound by reactor; And the hydrogen content in the first gas, the second gas and the 3rd gas reduces successively, and the gas composition of heat decomposable gaseous silicon compound raises successively.Wherein, preferably embodiment is the gas composition that the first gas comprises 97.5 to 98.5 % by mole of hydrogen and 1.5 to 2.5 % by mole of heat decomposable gaseous silicon compounds; The gas composition that described the second gas comprises 60 to 80 % by mole of hydrogen and 20 to 40 % by mole of heat decomposable gaseous silicon compounds; The gas composition that described the 3rd gas comprises 10 to 20 % by mole of hydrogen and 80 to 90 % by mole of heat decomposable gaseous silicon compounds.Wherein heat decomposable compound is selected from silane, trichlorosilane and composition thereof.
Referring to the first layer inlet mouth 31 described in Fig. 3, second layer inlet mouth 32 or the 3rd layer of inlet mouth 33 is spaced and is formed by circular port.
Referring to the first layer inlet mouth 31 described in Fig. 4, second layer inlet mouth 32 or the 3rd layer of inlet mouth 33 is annulus.In addition, described annulus can be the gap of a connection, can be also shape gap, interval.
In addition, according to actual Production requirement, this gas distribution unit 30 can also comprise the inlet mouth more than 3 layers, with more level and smooth transitional gas bulk concentration.
In gas distribution unit 30, also cooling channel can be set.Fluid (for example, air or cooling fluid) circulates in cooling channel, to gas distribution unit 30 is cooled to the heat decomposition temperature lower than the heat decomposable gaseous silicon compound from the first gas, the second gas or the 3rd gas.Cooling channel prevents that deposition of material is on the first layer inlet mouth 31, second layer inlet mouth 32 or the 3rd layer of inlet mouth 33 of gas distribution unit 30.
Based on above-mentioned reactor assembly, it is a kind of for produce the method for polysilicon product at reactor that the present invention also provides, and comprising:
By the first gas via the first layer inlet mouth 31 feedings of described gas distribution unit 30 and be delivered to reaction chamber 20;
By the second gas via second layer inlet mouth 32 feedings of described gas distribution unit 30 and be delivered to reaction chamber 20;
By the 3rd gas via the 3rd layer of inlet mouth 33 feeding of described gas distribution unit 30 and be delivered to reaction chamber 20;
And, silicon particle is contacted in reaction chamber 20, so that siliceous deposits is to silicon particle and increase granularity with heat decomposable silicon compound;
Wherein, described the first layer inlet mouth 31, second layer inlet mouth 33 and the 3rd layer of inlet mouth 33 are successively set on described gas distribution unit 30 from outside to inside; Described the first gas, the second gas and the 3rd gas are the gas composition that comprises hydrogen and heat decomposable gaseous silicon compound by reactor; And the hydrogen content in the first gas, the second gas and the 3rd gas reduces successively, and the gas composition of heat decomposable gaseous silicon compound raises successively.
In preferred embodiment, the gas composition that described the first gas comprises 97.5 to 98.5 % by mole of hydrogen and 1.5 to 2.5 % by mole of heat decomposable gaseous silicon compounds; The gas composition that described the second gas comprises 60 to 80 % by mole of hydrogen and 20 to 40 % by mole of heat decomposable gaseous silicon compounds; The gas composition that described the 3rd gas comprises 10 to 20 % by mole of hydrogen and 80 to 90 % by mole of heat decomposable gaseous silicon compounds.
The surface temperature of described reactor wall 21 is 800 to 1400 degrees Celsius.In preferred embodiment, be set to 900 to 1000 degrees Celsius.Wherein said heat decomposable compound is selected from silane, trichlorosilane and composition thereof.
Above-mentioned listed specific implementation is nonrestrictive, for a person skilled in the art, is not departing from the scope of the invention, and the various modifications and variations of carrying out, all belong to protection scope of the present invention.

Claims (10)

1. one kind for producing the method for polysilicon product at reactor, this reactor comprise reaction chamber and for by gas uniform be distributed to the gas distribution unit of reaction chamber, described reaction chamber comprises at least one reaction chamber wall, it is characterized in that, described method comprises:
By the first gas via the first layer inlet mouth feeding of described gas distribution unit and be delivered to reaction chamber;
By the second gas via the second layer inlet mouth feeding of described gas distribution unit and be delivered to reaction chamber;
By the 3rd gas via the 3rd layer of inlet mouth feeding of described gas distribution unit and be delivered to reaction chamber;
And, silicon particle is contacted in reaction chamber, so that siliceous deposits is to silicon particle and increase granularity with heat decomposable silicon compound;
Wherein,
Described the first layer inlet mouth, second layer inlet mouth and the 3rd layer of inlet mouth are successively set on described gas distribution unit from outside to inside;
Described the first gas, the second gas and the 3rd gas are the gas composition that comprises hydrogen and heat decomposable gaseous silicon compound by reactor; And the hydrogen content in the first gas, the second gas and the 3rd gas reduces successively, and the gas composition of heat decomposable gaseous silicon compound raises successively.
2. method according to claim 1, is characterized in that, the gas composition that described the first gas comprises 97.5 to 98.5 % by mole of hydrogen and 1.5 to 2.5 % by mole of heat decomposable gaseous silicon compounds;
The gas composition that described the second gas comprises 60 to 80 % by mole of hydrogen and 20 to 40 % by mole of heat decomposable gaseous silicon compounds;
The gas composition that described the 3rd gas comprises 10 to 20 % by mole of hydrogen and 80 to 90 % by mole of heat decomposable gaseous silicon compounds.
3. method according to claim 1, is characterized in that, the lip-deep temperature of described reactor is 800 to 1400 degrees Celsius.
4. method according to claim 1, is characterized in that, described heat decomposable compound is selected from silane, trichlorosilane and composition thereof.
5. a fluidized bed reactor system, comprise reaction chamber and for by gas uniform be distributed to the gas distribution unit of reaction chamber, described reaction chamber comprises at least one reaction chamber wall, it is characterized in that, described gas distribution unit at least comprise being communicated with the first gas compartment of setting gradually from outside to inside and for delivery of the first layer inlet mouth of the first gas, be communicated with the second gas compartment and for delivery of the second layer inlet mouth of the second gas and be communicated with the 3rd gas compartment and for delivery of the 3rd layer of inlet mouth of the 3rd gas;
Described the first gas, the second gas and the 3rd gas are the gas composition that comprises hydrogen and heat decomposable gaseous silicon compound by reactor; And the hydrogen content in the first gas, the second gas and the 3rd gas reduces successively, and the gas composition of heat decomposable gaseous silicon compound raises successively.
6. system according to claim 5, is characterized in that, the gas composition that described the first gas comprises 97.5 to 98.5 % by mole of hydrogen and 1.5 to 2.5 % by mole of heat decomposable gaseous silicon compounds;
The gas composition that described the second gas comprises 60 to 80 % by mole of hydrogen and 20 to 40 % by mole of heat decomposable gaseous silicon compounds;
The gas composition that described the 3rd gas comprises 10 to 20 % by mole of hydrogen and 80 to 90 % by mole of heat decomposable gaseous silicon compounds.
7. system according to claim 5, is characterized in that, the lip-deep temperature of described reactor is 800 to 1200 degrees Celsius;
Described heat decomposable compound is selected from silane, trichlorosilane and composition thereof.
8. according to the system described in claim 6 or 7, it is characterized in that, described gas distribution unit also comprises:
The first gas compartment, the second gas compartment, the 3rd gas compartment are not connected.
9. system according to claim 8, is characterized in that, described the first layer inlet mouth, second layer inlet mouth or the 3rd layer of inlet mouth are spaced and are formed by circular port.
10. system according to claim 8, is characterized in that, described the first layer inlet mouth, second layer inlet mouth or the 3rd layer of inlet mouth are annulus.
CN201310544194.7A 2013-11-06 2013-11-06 Method and system for producing polycrystalline silicon product in reactor Pending CN103553047A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3278872A4 (en) * 2015-04-01 2019-01-16 Hanwha Chemical Corporation Gas distribution device for fluidised-bed reactor system, fluidised-bed reactor system comprising gas distribution device, and method for preparing granular polysilicon using fluidised-bed reactor system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101258105A (en) * 2005-09-08 2008-09-03 瓦克化学股份公司 Method and device for producing granulated polycrystalline silicon in a fluidised-bed reactor
EP2019084A2 (en) * 2007-07-27 2009-01-28 Joint Solar Silicon GmbH & Co. KG Method and reactor for producing silicon
CN102083522A (en) * 2008-06-30 2011-06-01 Memc电子材料有限公司 Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls
CN102333585A (en) * 2008-11-05 2012-01-25 赫姆洛克半导体公司 Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
CN102686307A (en) * 2009-12-29 2012-09-19 Memc电子材料有限公司 Methods for reducing the deposition of silicon on reactor walls using peripheral silicon tetrachloride

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101258105A (en) * 2005-09-08 2008-09-03 瓦克化学股份公司 Method and device for producing granulated polycrystalline silicon in a fluidised-bed reactor
EP2019084A2 (en) * 2007-07-27 2009-01-28 Joint Solar Silicon GmbH & Co. KG Method and reactor for producing silicon
CN102083522A (en) * 2008-06-30 2011-06-01 Memc电子材料有限公司 Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls
CN102333585A (en) * 2008-11-05 2012-01-25 赫姆洛克半导体公司 Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
CN102686307A (en) * 2009-12-29 2012-09-19 Memc电子材料有限公司 Methods for reducing the deposition of silicon on reactor walls using peripheral silicon tetrachloride

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3278872A4 (en) * 2015-04-01 2019-01-16 Hanwha Chemical Corporation Gas distribution device for fluidised-bed reactor system, fluidised-bed reactor system comprising gas distribution device, and method for preparing granular polysilicon using fluidised-bed reactor system
US10518237B2 (en) 2015-04-01 2019-12-31 Hanwha Chemical Corporation Gas distribution unit for fluidized bed reactor system, fluidized bed reactor system having the gas distribution unit, and method for preparing granular polycrystalline silicon using the fluidized bed reactor system

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Application publication date: 20140205