CN103545894A - Intelligent thermal adjustment charging control circuit - Google Patents
Intelligent thermal adjustment charging control circuit Download PDFInfo
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- CN103545894A CN103545894A CN201310533912.0A CN201310533912A CN103545894A CN 103545894 A CN103545894 A CN 103545894A CN 201310533912 A CN201310533912 A CN 201310533912A CN 103545894 A CN103545894 A CN 103545894A
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- 238000007600 charging Methods 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 claims description 29
- 230000007935 neutral effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000010277 constant-current charging Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Abstract
The invention discloses an intelligent thermal regulation charging control circuit, which relates to the electronic technology and comprises a first current mirror circuit and a second current mirror circuit; the reference point of the first current mirror circuit is connected with a zero temperature coefficient reference current source, and the mirror point of the first current mirror circuit is connected with a positive temperature coefficient current source; the reference point of the second current mirror circuit is connected with the mirror point of the first current mirror circuit, and the mirror point of the second current mirror circuit is connected with the load; the current source is connected with the constant current amplifier in parallel and then is grounded through a load, and the connecting point of the current source and the constant current amplifier is connected with the grid electrode of the power tube; the drain electrode of the power tube is grounded through a load, and the drain electrode of the power tube is also used as a battery connecting end; the current of the current source is mirrored from the current of the load connected to the mirror point of the second mirror circuit. According to the invention, the charging current in the constant-current charging stage is adjusted through thermal feedback, so that the temperature of the chip in the total charging process is reduced, and the charging speed of the charging equipment and the temperature stability of the control chip are ensured.
Description
Technical field
The present invention relates to electronic technology.
Background technology
A main shortcoming of market Linear charger chip is: when input voltage is high and cell voltage is low, there will be too high power consumption.The power consumption of chip is shown below:
P=(V
CC-V
BAT)·I
CHARGE
When charger chip is transformed into constant current charging mode by trickle charge pattern, now the voltage of battery is very low, and the difference of input voltage and cell voltage is larger, and the high power consumption that now very large charged electrical fails to be convened for lack of a quorum and produces, and causes the temperature of chip sharply to rise.In typical situation, this state is temporary transient, but when determining the maximum permissible value of charging current and chip temperature, must consider the heat dissipation in this situation.
Solve problems of excessive heat and conventionally have following three kinds of methods:
1. reduce the charging current of whole constant-current phase in charging process.Reduce after charging current, chip power-consumption reduces, even chip can be not overheated yet when cell voltage is very low, but owing to having reduced charging current, the time that must increase charging accordingly could be full of battery, and this method has reduced the speed of charging.
2. when reaching 160 ℃, turn-offs chip temperature chip.The same with first method, take heat to turn-off and also can reduce the speed of charging.Large current charge when cell voltage is very low, the temperature of chip rises to rapidly 160 ℃, now turn-offing chip stops after charging, the voltage of battery will can not rise, and when opening chip charging again, chip still can produce very large power consumption, its temperature can rise rapidly again, again cause turn-offing chip, and so forth, the speed of charging is by serious reduction.
Technical problem to be solved by this invention is to provide a kind of and fed back and realized the permanent steady control of temperature of chip and the automatic adjustment of charging current, the charging control circuit of the assurance charging rate of charging device and the temperature stability of control chip by heat.
The technical scheme that the present invention solve the technical problem employing is that Intelligent hot is adjusted charging control circuit, it is characterized in that, comprises the first current mirror circuit, the second current mirror circuit;
The reference point connecting to neutral temperature coefficient reference current source of the first current mirror circuit, the mirror point of the first current mirror circuit connects positive temperature coefficient current source;
The reference point of the second current mirror circuit connects the mirror point of the first current mirror circuit, and the mirror point of the second current mirror circuit connects load;
Current source is in parallel with constant-current amplifier afterwards by load ground connection, and the tie point of current source and constant-current amplifier connects the grid of power tube; The drain electrode of power tube is by load ground connection, and the drain electrode of power tube is also as battery link; The current mirror of current source is from the electric current of the load being connected with the mirror point of the second mirror image circuit.
Described the first current mirror circuit and the second current mirror circuit are all to consist of two identical metal-oxide-semiconductors, and two metal-oxide-semiconductor grids join.
The invention has the beneficial effects as follows, the heat dissipation problems of bringing on charge mode for linear charger, on the basis of Track character that meets the actual trickle of battery and constant current charge, provide a kind of novel charging modes: by the charging current in hot feedback adjusting constant current charge stage, thereby reduce the temperature of chip in the total process of charging, guaranteed the temperature stability of charging rate and the control chip of charging device simultaneously.
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Accompanying drawing explanation
Fig. 1 is that reference current produces schematic diagram.
Fig. 2 is that Intelligent hot regulates electric current to produce schematic diagram.
Fig. 3 is that charging circuit Intelligent hot of the present invention regulates schematic diagram and regulating effect schematic diagram.
Fig. 4 is the Contrast on effect of the present invention and other two kinds of technology.
Fig. 5 is the circuit diagram of embodiments of the invention.
Basic embodiment.
Referring to Fig. 1～5.
The present invention takes heat feedback to make the temperature constant of chip adjust automatically charging current simultaneously.In the constant current charge stage, producing high power consumption makes chip temperature rise to hot feedback threshold T
ctime, the effect due to heat feedback, will force charging current to reduce, thereby make junction temperature of chip maintain T
c.Owing to not stopping the charging to battery in temperature constant, so cell voltage can continue to rise, the power consumption of chip will reduce, when being reduced to, power consumption to a certain degree exits heat feedback, now or turn back to constant current mode, charging current returns to maximum, or directly enters constant voltage mode.This method is than first two method, and it allows large electric current quick charge in normothermic situation, has overcome any problems of excessive heat simultaneously, and has maintained the quick charge time, has significantly improved the speed of charging; Simultaneously the method allows user to improve the upper limit of given circuit power output plate disposal ability and there is no the risk of defective chip or outer member, and it is a kind of heat adjustment of intelligence thus.
The present invention includes reference current source and Intelligent hot Circuit tuning; Reference current source comprises operational amplifier and power MOS pipe, by producing the electric current I that a pair of temperature coefficient is contrary
pTATand I
cTATobtain the reference current I of zero-temperature coefficient
rEF.Intelligent hot is adjusted electric current and is comprised power MOS pipe and charging circuit, the electric current I by setting with temperature correlation
pTATcontrol hot feedback threshold T
c, utilize mirror current source and coordinating of power MOS pipe to realize output current I
oTcontrol.Output current I
oTflow through after treatment charging circuit and control charging current, thereby realize heat, adjust function.Unless otherwise noted, the mirror image multiple of mirror image circuit of the present invention can be with demand setting.
Referring to Fig. 1.
Reference current can be used the electric current (I of a positive temperature coefficient
pTAT) and the electric current (I of a negative temperature coefficient
cTAT), the electric current of the two superimposed acquisition one zero-temperature coefficient.
Reference current is:
I
REF=I
PTAT+I
CTAT
By the suitable current parameters value of choosing, just can obtain the reference current of a zero-temperature coefficient.
Referring to Fig. 2.
For Intelligent hot adjustment, because reference current is almost constant in whole temperature range, get positive temperature coefficient electric current I
pTATwith reference current I
rEFcompare, the Threshold of this current comparator, on needed temperature value, when temperature surpasses predetermined value, can be obtained to the change of current comparator state, thereby realize heat adjustment.
Metal-oxide-semiconductor 5 and metal-oxide-semiconductor 6 are identical, and metal-oxide-semiconductor 7 and metal-oxide-semiconductor 8 are identical.Due to current mirror, the electric current that flows through metal-oxide-semiconductor 8 so known is:
I
OT=I
DMOS7=I
PTAT-I
REF
Due to I
pTATbe directly proportional to temperature, a temperature T can be set
c, at temperature T <T
ctime, I
pTAT<I
rEF, now metal-oxide-semiconductor 7 cut-offs, I
oTbe output as zero; Otherwise, export non-vanishing.
Referring to Fig. 3.
I
oTcan change on demand its size, for example, get I
oT1 times of mirror image of electric current, outputs to by this image current the part that charging circuit is controlled charging current, just can realize heat and adjust function.Metal-oxide-semiconductor 11 is the power tube in charging circuit, I
cAoutput current for constant-current amplifier 15.When charging circuit temperature does not rise to T
ctime, I
oTbe zero, the electric current of now load 12 equals I
cA, charging current is determined by constant-current amplifier; When charging circuit temperature rises to T
ctime, I
oTnon-vanishing, now the voltage of power MOS pipe 11 grids will rise, by metal-oxide-semiconductor drain current formula
The known electric current that now flows through power tube will reduce, thereby reduce charging current, realize Intelligent hot and adjust function.
Referring to Fig. 4.
In figure, list the three kinds overheated adjustment implementation output currents of mentioning above and varied with temperature curve.For figure (a), represent the first implementation above, adopt lower constant current to charge, although can guarantee that chip temperature can not surpass its working temperature, because power is lower, will inevitably make the charging interval extend, efficiency is very low.For figure (b), it is the output current schematic diagram after optimizing on the basis of the second implementation of mentioning above, it utilizes the principle of hysteresis comparator that two different temperatures threshold values are set, although realized, when reaching threshold value, chip temperature selects whether to have output current, but charge owing to only adopting constant current value when having output current, can not produce speed to chip heat regulates, after charging a period of time, can again enter overtemperature protection state blocking-up output current and stop charging, when being cooled to temperature lower than threshold value, chip just starts charging, so cause the charging interval longer, speed is lower.For figure (c), it is the qualitative representation to implementation output current of the present invention, it adopts thermally sensitive control circuit, when chip temperature reaches threshold value, intelligence reduces output current and continues charging, and it is not blocked completely, in this process, although chip can continue to produce heat, but because its heat generation speed is lower than dissipation rate, so temperature can reduce gradually.Compare in the first implementation the adjustment mode of blocking-up output completely that adopts in lower charging current and the second implementation after temperature reaches threshold value, the third implementation method can continue to carry out charging operations when temperature reaches threshold value, guaranteeing to have improved charge rate when chip temperature maintains within threshold range, reaching not only rapidly and efficiently but also object that stability and safety is charged.
Embodiment is referring to Fig. 5 more specifically.Dotted arrow in Fig. 5 represents current mirror relation.
From general band-gap reference source generating circuit structure, one of meeting generation and the positively related electric current I PTAT of temperature, one and temperature negative correlation electric current I CTAT in final benchmark production process, as current source in Fig. 5 27,28, it is shown below in detail:
Wherein, VT is thermal voltage, with temperature positive correlation; N is the ratio of two triode emitter junction areas in reference circuit; R1, R2 are the resistance in reference circuit; VEB is the voltage between transistor emitter-base stage two ends, with temperature negative correlation.The electric current of two of this generation in reference circuit and temperature correlation, by current-mirror structure according to a certain percentage (W/L of metal-oxide-semiconductor determines in current-mirror structure) mirror image to supercircuit as current source in Fig. 5 29,30.
As an embodiment, Intelligent hot is adjusted charging circuit, comprises the first current mirror circuit and the second current mirror circuit; The effect of the first current mirror circuit is the electric current to the metal-oxide-semiconductor 24 of flowing through by the zero-temperature coefficient reference current source IREF mirror image of the metal-oxide-semiconductor 23 of flowing through, according to general current-mirror structure requirement, the first current mirror circuit reference point is the drain electrode of metal-oxide-semiconductor 23, and mirror point is the drain electrode of metal-oxide-semiconductor 24; The effect of the second current mirror circuit is to current output circuit by the current mirror of the metal-oxide-semiconductor 25 of flowing through, connect battery and carry out charging operations, according to general current-mirror structure requirement, the second current mirror circuit reference point is the drain electrode of metal-oxide-semiconductor 25, and mirror point is the drain electrode of metal-oxide-semiconductor 26.Should be noted, the electric current of the metal-oxide-semiconductor 25 of flowing through is the electric current that flows through in current source 31 and the difference between currents of the metal-oxide-semiconductor 24 of flowing through, and wherein in current source 31, electric current is temperature positive correlation electric current, and it obtains by IPTAT in mirror image reference current source according to a certain percentage.
Described the first current mirror circuit and the second current mirror circuit are all to consist of two identical metal-oxide-semiconductors, and two metal-oxide-semiconductor grids join.
In Fig. 5, V
eBsignal is the voltage with negative temperature coefficient.I
oTi
rEFimage current and I
pTATimage current poor.
When temperature surpasses default temperature T
ctime:
By above formula, known the value that can set k, make charging circuit not surpass preset temperature T in temperature
ctime, now the grid current potential of metal-oxide-semiconductor 25 will be pulled to earth potential, metal-oxide-semiconductor 26 cut-offs, I
oTbe zero, thereby output current is zero, can not impact the grid current potential of metal-oxide-semiconductor in Fig. 3 11, charging is normally carried out; Otherwise, when charging circuit temperature surpasses T
ctime, will have electric current to flow into metal-oxide-semiconductor 25, this current mirror to after metal-oxide-semiconductor 26 by generation current I
oTthereby output current, by affecting the grid current potential of power tube, reduces charging current.
Claims (2)
1. Intelligent hot is adjusted charging control circuit, it is characterized in that, comprises the first current mirror circuit, the second current mirror circuit;
The reference point of the first current mirror circuit (A1) connecting to neutral temperature coefficient reference current source, the mirror point of the first current mirror circuit (A2) connects positive temperature coefficient current source (31);
The reference point of the second current mirror circuit (B1) connects the mirror point of the first current mirror circuit, and the mirror point of the second current mirror circuit (B2) connects load (32);
After current source (16) is in parallel with constant-current amplifier (15), by load 12 ground connection, the tie point of current source (16) and constant-current amplifier (15) connects the grid of power tube (11); The drain electrode of power tube (11) is by load (13) ground connection, and the drain electrode of power tube (11) is also as battery link; The current mirror of current source (16) is from the electric current of load (32).
2. Intelligent hot as claimed in claim 1 is adjusted charging circuit, it is characterized in that, described the first current mirror circuit and the second current mirror circuit are all to consist of two identical metal-oxide-semiconductors, and two metal-oxide-semiconductor grids join.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310533912.0A CN103545894A (en) | 2013-10-31 | 2013-10-31 | Intelligent thermal adjustment charging control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310533912.0A CN103545894A (en) | 2013-10-31 | 2013-10-31 | Intelligent thermal adjustment charging control circuit |
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| CN103545894A true CN103545894A (en) | 2014-01-29 |
Family
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684991A (en) * | 2016-12-30 | 2017-05-17 | 滁州昭阳电信通讯设备科技有限公司 | Charging method and mobile power supply |
| CN111585550A (en) * | 2020-06-16 | 2020-08-25 | 成都信息工程大学 | Current comparison circuit for overvoltage protection |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101702528A (en) * | 2009-11-19 | 2010-05-05 | 北京中星微电子有限公司 | Battery charging control device |
| US20110215849A1 (en) * | 2009-05-06 | 2011-09-08 | Freescale Semiconductor, Inc | Charge pump for phase locked loop |
| CN102681587A (en) * | 2012-05-23 | 2012-09-19 | 天津大学 | Low-temperature drifting reference voltage and reference current generating circuit |
-
2013
- 2013-10-31 CN CN201310533912.0A patent/CN103545894A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110215849A1 (en) * | 2009-05-06 | 2011-09-08 | Freescale Semiconductor, Inc | Charge pump for phase locked loop |
| CN101702528A (en) * | 2009-11-19 | 2010-05-05 | 北京中星微电子有限公司 | Battery charging control device |
| CN102681587A (en) * | 2012-05-23 | 2012-09-19 | 天津大学 | Low-temperature drifting reference voltage and reference current generating circuit |
Non-Patent Citations (1)
| Title |
|---|
| 毛悦等: "一种用于升压型DC-DC变换器的过温保护电路", 《微电子学》, vol. 42, no. 2, 30 April 2012 (2012-04-30), pages 177 - 182 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684991A (en) * | 2016-12-30 | 2017-05-17 | 滁州昭阳电信通讯设备科技有限公司 | Charging method and mobile power supply |
| CN111585550A (en) * | 2020-06-16 | 2020-08-25 | 成都信息工程大学 | Current comparison circuit for overvoltage protection |
| CN111585550B (en) * | 2020-06-16 | 2024-05-10 | 成都信息工程大学 | Current comparison circuit for overvoltage protection |
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Application publication date: 20140129 |