CN103537795B - High-power semiconductor laser system of processing - Google Patents
High-power semiconductor laser system of processing Download PDFInfo
- Publication number
- CN103537795B CN103537795B CN201310525919.8A CN201310525919A CN103537795B CN 103537795 B CN103537795 B CN 103537795B CN 201310525919 A CN201310525919 A CN 201310525919A CN 103537795 B CN103537795 B CN 103537795B
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- Prior art keywords
- semiconductor laser
- housing
- beam focusing
- focusing module
- power semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
Abstract
The invention provides a kind of high-power semiconductor laser system of processing.The clamping device of the beam focusing module of this high-power semiconductor laser system of processing is mounted on the inner bottom surface of housing by radiating block; The eyeglass clamping contact position of beam focusing module is provided with heat-conducting buffer bed course; In enclosure interior, Packed water-cooling channel is set, this water-cooling channel forms annular water channel to delivery port at housing bottom from water inlet, mainly be divided into inlet segment, kink A, kink B and water exit end, wherein inlet segment and water exit end lay respectively at enclosure interior both sides and be arranged in parallel, between the inner bottom surface of the housing of radiating block and correspondence position, be provided with passage along beam focusing module bent radial as described kink A, for dispelling the heat to beam focusing module; Kink B is positioned at the leading head of housing around protecting window, for dispelling the heat to protecting window.High-power semiconductor laser system of processing volume of the present invention is little, and quality is light, good heat dissipation effect.
Description
Technical field
The present invention relates to a kind of semiconductor laser system of processing (equipment).
Background technology
High-power semiconductor laser has the advantages such as volume is little, lightweight, efficiency is high, the life-span is long, be widely used in Laser Processing, laser medicine, laser display and field of scientific study, become the comprehensive new and high technology that new century development is fast, achievement is many, Subject identity is wide, range of application is large.
Laser Processing is mainly used in cutting, surface treatment, welding, mark and punching etc.Laser Surface Treatment comprises laser transformation hardening, laser cladding, laser surface alloying and laser surface remelting etc.Laser processing technology mainly contains the advantage of following uniqueness:
(1) wear and tear without " cutter " in laser processing procedure, act on workpiece without " cutting force ";
(2) can to various metals, nonmetal processing, particularly can processing high-hardness, high fragility and dystectic material;
(3) laser beam is easy to guiding, all directions conversion is done in focusing realization, and very easily coordinate with digital control system, process complex part, therefore it is one processing method very flexibly;
(4) contactless processing, to workpiece without direct impact, therefore mechanical distortion, and the energy of high energy laser beam and translational speed thereof are all adjustable, therefore can realize the object of multiple processing;
(5) in laser processing procedure, laser beam energy density is high, and process velocity is fast, and is partial operation, and on non-laser irradiated site not or affect minimum, therefore, its heat affected area is little, and workpiece thermal deformation is little, and following process amount is little.
The laser instrument being applied to Laser Processing mainly contains CO2 laser instrument, solid state laser, for CO2 laser instrument, solid state laser as the laser process equipment made, its volume is large, quality weight, can not realize portable, can not realize automatically, result in working (machining) efficiency not high with the laser process equipment of CO2 laser instrument as light source simultaneously.
Summary of the invention
The invention provides a kind of high-power semiconductor laser system of processing.
Technical scheme of the present invention is as follows:
A kind of high-power semiconductor laser system of processing, comprise housing, semiconductor laser light source system and protecting window, wherein, semiconductor laser light source system is fixedly installed in housing, protecting window is fixedly embedded in the leading head of housing, and the center of protecting window is on the optical axis of semiconductor laser light source system bright dipping light path; Described semiconductor laser light source system comprises semiconductor laser light source and beam focusing module, the clamping device of beam focusing module is mounted on the inner bottom surface of housing by radiating block, the eyeglass clamping contact position of beam focusing module is provided with heat-conducting buffer bed course; In enclosure interior, Packed water-cooling channel is set, this water-cooling channel forms annular water channel to delivery port at housing bottom from water inlet, mainly be divided into inlet segment, kink A, kink B and water exit end, wherein inlet segment and water exit end lay respectively at enclosure interior both sides and be arranged in parallel, between the inner bottom surface of the housing of radiating block and correspondence position, be provided with passage along beam focusing module bent radial as described kink A, for dispelling the heat to beam focusing module; Described kink B is positioned at the leading head of housing around protecting window, for dispelling the heat to protecting window.
Based on above-mentioned basic scheme, the present invention also does following optimization and limits and improve:
Above-mentioned heat-conducting buffer bed course adopts indium membrane material.
Housing is also provided with air inlet and exhaust outlet, dry gas is entered after the inswept semiconductor laser light source of housing cavity and beam focusing module by exhaust outlet Natural excrement by air inlet.
Air jet system is had, the oblique setting of the jet mouth of pipe of air jet system in the leading head arranged outside of housing.
The main body of above-mentioned protecting window is double-layer plate structure, and material is quartz glass, filled vacuum between two-layer.
Above-mentioned protecting window and semiconductor laser light source system bright dipping end keep the gap of 3-5mm.
The present invention has the following advantages:
High-power semiconductor laser system of processing volume of the present invention is little, and quality is light;
The housing parts of the present invention below beam focusing module arranges catch basin; the heat of beam focusing module well can be derived; the present invention simultaneously arranges and blows afloat protection; prevent high-power semiconductor laser system of processing inside from producing condensation after excessive moisture, make the better reliability of Laser Diode System.
The eyeglass clamping contact position of beam focusing module is provided with heat-conducting buffer bed course, and increasing heat radiation area, simultaneously to the flexible clamping of eyeglass, also improves the reliability installed additional.
The main body of protecting window is double-layer plate structure, filled vacuum between two-layer, makes the semiconductor laser light source of semiconductor laser system of processing inside and beam focusing module not be subject to external environmental interference; In process, splash not easily enters internal contamination internal environment; The main body of protecting window is double-layer plate structure simultaneously, filled vacuum between two-layer, if outer layer protection window damages, can change in time and not affect semiconductor laser system of processing inside.
Accompanying drawing explanation
Fig. 1 is internal structure schematic diagram (overlooking direction) of the present invention.
Fig. 2 is the cross-sectional schematic at protecting window place.
Fig. 3 is a kind of schematic diagram of blow dried.
Fig. 4 is the schematic diagram of another kind of blow dried.
Fig. 5 is the schematic diagram of eyeglass clip position.
Fig. 6 is an exemplar sectional view in kind of the present invention.
Drawing reference numeral illustrates:
1-semiconductor laser light source system; 2-housing; 3-protecting window; 4-inlet segment; 5-water exit end; 6-beam focusing module; The water route at A(beam focusing module place, 7-storage part); The water route at 8-kink B(protecting window place); 9-heat-conducting buffer bed course.
Detailed description of the invention
As shown in Figure 1, high-power semiconductor laser system of processing of the present invention, comprises housing, semiconductor laser light source system 1, protecting window 3 and cooling system.
Semiconductor laser light source system is fixedly installed in enclosure system, and protecting window is fixedly installed in the front end of housing, keeps suitable gap with semiconductor laser light source system light out part.The main body of protecting window is double-layer plate structure, filled vacuum between two-layer.Plate material can select the material comparatively mated with protecting window frame for installing thermal coefficient of expansion.Usual frame for installing is high-thermal conductive metal material, and double-layer plate therefore can be selected to select quartz glass material.
Semiconductor laser light source system comprises semiconductor laser light source, beam focusing module.Except the heat radiation of traditional scheme noise spectra of semiconductor lasers light source itself, the present invention is also dispelled the heat to beam focusing module.Enclosure interior is provided with water-cooling channel, and water-cooling channel comprises inlet segment, water exit end and kink A, B.Kink A, B are respectively used to cool beam focusing module, protecting window.
Kink A is specifically as follows " several " font makes current cover the bottom of beam focusing module as far as possible.In addition, kink A both can meet inlet segment, kink B by head and the tail respectively; Also can as shown in Figure 1, (the not directly being communicated with) two parts being divided into position relative, namely part head and the tail meet inlet segment, kink B respectively, and another part head and the tail connect kink B, water exit end respectively.
The object of blow dried adopts to pass into dry compressed air or inert gas, as nitrogen, helium etc., the aqueous vapor in housing discharged, thus avoid the generation of condensed water in housing, improves environment for use and the life-span of folded battle array.In order to improve the effect of hydrofuge, the terminal of air inlet and the terminal of exhaust outlet are in the both direction of housing, and dry gas respectively sweeping crosses the internal parts such as folded battle array, lens, reaches best hydrofuge effect, and make that the institute in housing is wetly to be all discharged.
Air jet system is had, the oblique setting of the jet mouth of pipe of air jet system in the leading head arranged outside of housing.The chip splashing injury protection window that work top produces can be avoided like this.
The eyeglass clamping contact position of beam focusing module is provided with heat-conducting buffer bed course, the thermal coefficient of expansion of heat-conducting buffer bed course, between the thermal coefficient of expansion and the thermal coefficient of expansion of gripping element of beam focusing module, reduces the stress between beam focusing module and gripping element.Such as heat-conducting buffer bed course selects indium membrane material etc., can either increasing heat radiation area simultaneously to the flexible clamping of eyeglass, also improve the reliability installed additional.
Claims (6)
1. high-power semiconductor laser system of processing, comprise housing, semiconductor laser light source system and protecting window, wherein, semiconductor laser light source system is fixedly installed in housing, protecting window is fixedly embedded in the leading head of housing, and the center of protecting window is on the optical axis of semiconductor laser light source system bright dipping light path; Described semiconductor laser light source system comprises semiconductor laser light source and beam focusing module, the clamping device of beam focusing module is mounted on the inner bottom surface of housing by radiating block, the eyeglass clamping contact position of beam focusing module is provided with heat-conducting buffer bed course; In enclosure interior, Packed water-cooling channel is set, this water-cooling channel forms annular water channel to delivery port at housing bottom from water inlet, mainly be divided into inlet segment, kink A, kink B and water exit end, wherein inlet segment and water exit end lay respectively at enclosure interior both sides and be arranged in parallel, between the inner bottom surface of the housing of radiating block and correspondence position, be provided with passage along beam focusing module bent radial as described kink A, for dispelling the heat to beam focusing module; Described kink B is positioned at the leading head of housing around protecting window, for dispelling the heat to protecting window.
2. high-power semiconductor laser system of processing according to claim 1, is characterized in that: described heat-conducting buffer bed course adopts indium membrane material.
3. high-power semiconductor laser system of processing according to claim 1, it is characterized in that: on housing, be also provided with air inlet and exhaust outlet, dry gas is entered after the inswept semiconductor laser light source of housing cavity and beam focusing module by exhaust outlet Natural excrement by air inlet; The terminal of air inlet and the terminal of exhaust outlet lay respectively at the both direction of housing.
4. high-power semiconductor laser system of processing according to claim 1, is characterized in that: have air jet system in the leading head arranged outside of housing, the oblique setting of the jet mouth of pipe of air jet system.
5. high-power semiconductor laser system of processing according to claim 1, is characterized in that: the main body of described protecting window is double-layer plate structure, and material is quartz glass, filled vacuum between two-layer.
6. high-power semiconductor laser system of processing according to claim 1, is characterized in that: protecting window and semiconductor laser light source system bright dipping end keep the gap of 3-5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310525919.8A CN103537795B (en) | 2013-10-29 | 2013-10-29 | High-power semiconductor laser system of processing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310525919.8A CN103537795B (en) | 2013-10-29 | 2013-10-29 | High-power semiconductor laser system of processing |
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| Publication Number | Publication Date |
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| CN103537795A CN103537795A (en) | 2014-01-29 |
| CN103537795B true CN103537795B (en) | 2016-03-30 |
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| CN201310525919.8A Active CN103537795B (en) | 2013-10-29 | 2013-10-29 | High-power semiconductor laser system of processing |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106112262A (en) * | 2016-08-26 | 2016-11-16 | 南京英田光学工程股份有限公司 | Heat radiation laser lens and laser instrument |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226487A (en) * | 2015-10-26 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser scanning device |
| CN105215558B (en) * | 2015-10-26 | 2017-09-12 | 惠州市杰普特电子技术有限公司 | Laser cutting device |
| WO2019155602A1 (en) * | 2018-02-09 | 2019-08-15 | 三菱電機株式会社 | Optical module |
| CN113363802B (en) * | 2021-01-29 | 2022-09-27 | 安徽科技学院 | High-power semiconductor laser lens cooling system |
| CN113078551B (en) * | 2021-03-30 | 2022-07-29 | 北京新科以仁科技发展有限公司 | High-power semiconductor laser |
| CN114914776A (en) * | 2022-04-13 | 2022-08-16 | 同济大学 | Lens heat dissipation device for laser system |
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| JP2001358397A (en) * | 2000-06-15 | 2001-12-26 | Matsushita Electric Ind Co Ltd | Laser heating device |
| JP2002144073A (en) * | 2000-11-07 | 2002-05-21 | Matsushita Electric Ind Co Ltd | Optical processor |
| CN202960764U (en) * | 2012-11-22 | 2013-06-05 | 西安炬光科技有限公司 | Double-side refrigerating semi-conductor laser system for medical beautification |
| CN203227932U (en) * | 2013-05-17 | 2013-10-09 | 武汉梅曼科技有限公司 | Multi-layer gas curtain laser cutting head |
| CN203621726U (en) * | 2013-10-29 | 2014-06-04 | 西安炬光科技有限公司 | High power semiconductor laser processing system |
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Patent Citations (6)
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| GB1462062A (en) * | 1973-12-05 | 1977-01-19 | Atomic Energy Authority Uk | Laser anemometer probes |
| JP2001358397A (en) * | 2000-06-15 | 2001-12-26 | Matsushita Electric Ind Co Ltd | Laser heating device |
| JP2002144073A (en) * | 2000-11-07 | 2002-05-21 | Matsushita Electric Ind Co Ltd | Optical processor |
| CN202960764U (en) * | 2012-11-22 | 2013-06-05 | 西安炬光科技有限公司 | Double-side refrigerating semi-conductor laser system for medical beautification |
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| CN106112262A (en) * | 2016-08-26 | 2016-11-16 | 南京英田光学工程股份有限公司 | Heat radiation laser lens and laser instrument |
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| CN103537795A (en) | 2014-01-29 |
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Address after: 710119 high tech Zone, Shaanxi, Xi'an new industrial park information Avenue, building 17, building three, floor 10 Applicant after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710119 high tech Zone, Shaanxi, Xi'an new industrial park information Avenue, building 17, building three, floor 10 Applicant before: Xi'an Focuslight Technology Co., Ltd. |
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