CN103537795A - High power semiconductor laser processing system - Google Patents
High power semiconductor laser processing system Download PDFInfo
- Publication number
- CN103537795A CN103537795A CN201310525919.8A CN201310525919A CN103537795A CN 103537795 A CN103537795 A CN 103537795A CN 201310525919 A CN201310525919 A CN 201310525919A CN 103537795 A CN103537795 A CN 103537795A
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- China
- Prior art keywords
- semiconductor laser
- housing
- light beam
- power semiconductor
- light source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
Abstract
The invention provides a high power semiconductor laser processing system. A clamping mechanism of a light beam focusing module of the high power semiconductor laser processing system is fixedly installed on the inner bottom face of a casing through a radiating block, a heat conduction buffer cushion layer is arranged at the lens clamping contact position of the light beam focusing module, and a sealed water cooling channel is arranged in the casing. An annular water channel is formed at the bottom of the casing from the water inlet to the water outlet and is mainly divided into a water inlet section, a bending portion A, a bending portion B and a water outlet section, the water inlet section and the water outlet section are located on two sides of the inside of the casing respectively and arranged in parallel, and a channel bending in the radial direction of the light beam focusing module is arranged between the radiating block and the inner bottom face of the casing at the corresponding position and is used for conducting radiating on the light beam focusing module. The bending portion B is located at the front end of the casing and surrounds a protection window to conduct radiating on the protection window. The high power semiconductor laser processing system is small in size, light in mass and good in radiating effect.
Description
Technical field
The present invention relates to a kind of semiconductor laser system of processing (equipment).
Background technology
High-power semiconductor laser has the advantages such as volume is little, lightweight, efficiency is high, the life-span is long, be widely used in Laser Processing, laser medicine, laser display and field of scientific study, become the comprehensive new and high technology that new century development is fast, achievement is many, subject infiltration is wide, range of application is large.
Laser Processing is mainly used in cutting, surface treatment, welding, mark and punching etc.Laser Surface Treatment comprises laser transformation hardening, laser cladding, laser surface alloying and laser surface remelting etc.Laser processing technology mainly contains the advantage of following uniqueness:
(1) in laser processing procedure, without " cutter ", wear and tear, without " cutting force ", act on workpiece;
(2) can be to various metals, nonmetal processing, particularly can processing high-hardness, high fragility and dystectic material;
(3) laser beam is easy to guiding, focuses on to realize and do all directions conversion, very easily coordinate, complex part is processed with digital control system, so it is a kind of processing method very flexibly;
(4) contactless processing, to workpiece without direct impact, so machinery-free distortion, and the energy of high energy laser beam and translational speed all adjustable, therefore can realize the object of multiple processing;
(5) in laser processing procedure, laser beam energy density is high, and process velocity is fast, and is partial operation, and non-Ear Mucosa Treated by He Ne Laser Irradiation position is not had or affects minimumly, and therefore, its heat affected area is little, and workpiece thermal deformation is little, and following process amount is little.
The laser instrument that is applied to Laser Processing mainly contains CO2 laser instrument, solid state laser, for CO2 laser instrument, solid state laser as the laser process equipment of making, its volume is large, quality weight, can not realize portable, with CO2 laser instrument, as the laser process equipment of light source, can not realize automatically simultaneously, cause working (machining) efficiency not high.
Summary of the invention
The invention provides a kind of high-power semiconductor laser system of processing.
Technical scheme of the present invention is as follows:
A kind of high-power semiconductor laser system of processing, comprise housing, semiconductor laser light source system and protecting window, wherein, semiconductor laser light source system is fixedly installed in housing, protecting window is fixedly embedded in the front end head of housing, on the optical axis of the center of protecting window in semiconductor laser light source system bright dipping light path; Described semiconductor laser light source system comprises semiconductor laser light source and light beam focus module, the clamping device of light beam focus module is mounted on the inner bottom surface of housing by radiating block, in the eyeglass clamping contact position of light beam focus module, be provided with heat-conducting buffer bed course; In enclosure interior, Packed water-cooling channel is set, this water-cooling channel forms annular water route from water inlet to delivery port at housing bottom, mainly be divided into inlet segment, kink A, kink B and water exit end, wherein inlet segment and water exit end lay respectively at enclosure interior both sides and be arranged in parallel, between the inner bottom surface of the housing of radiating block and correspondence position, be provided with passage along light beam focus module bent radial as described kink A, for light beam focus module is dispelled the heat; Described kink B is positioned at the front end head of housing around protecting window, for protecting window is dispelled the heat.
Based on above-mentioned basic scheme, the present invention also does following optimization and limits and improve:
Above-mentioned heat-conducting buffer bed course adopts indium membrane material.
On housing, be also provided with air inlet and exhaust outlet, dry gas is entered after the inswept semiconductor laser light source of housing inner chamber and light beam focus module by exhaust outlet Natural excrement by air inlet.
Front end head arranged outside at housing has air jet system, the oblique setting of the jet mouth of pipe of air jet system.
The main body of above-mentioned protecting window is double-layer plate structure, and material is quartz glass, two-layer between filled vacuum.
Above-mentioned protecting window and semiconductor laser light source system bright dipping end keep the gap of 3-5mm.
The present invention has the following advantages:
High-power semiconductor laser system of processing volume of the present invention is little, and quality is light;
The housing parts of the present invention below light beam focus module arranges catch basin; the heat of light beam focus module well can be derived; setting of the present invention simultaneously blows afloat protection; preventing that high-power semiconductor laser system of processing is inner produces condensation after excessive moisture, makes the better reliability of Laser Diode System.
Eyeglass clamping contact position in light beam focus module is provided with heat-conducting buffer bed course, and increasing heat radiation area is the flexible clamping to eyeglass simultaneously, has also improved the reliability installing additional.
The main body of protecting window is double-layer plate structure, two-layer between filled vacuum, make the semiconductor laser light source of semiconductor laser system of processing inside and light beam focus module not be subject to external environmental interference; In process, splash is difficult for entering internal contamination internal environment; Simultaneously the main body of protecting window is double-layer plate structure, two-layer between filled vacuum, if outer layer protection window damages, can change in time and not affect semiconductor laser system of processing inner.
Accompanying drawing explanation
Fig. 1 is internal structure schematic diagram of the present invention (overlooking direction).
Fig. 2 is the cross-sectional schematic at protecting window place.
Fig. 3 is a kind of schematic diagram of blow dried.
Fig. 4 is the schematic diagram of another kind of blow dried.
Fig. 5 is the schematic diagram of eyeglass clip position.
Fig. 6 is an exemplar cutaway view in kind of the present invention.
Drawing reference numeral explanation:
1-semiconductor laser light source system; 2-housing; 3-protecting window; 4-inlet segment; 5-water exit end; 6-light beam focus module; The water route at A(light beam focus module place, 7-storage part); The water route at 8-kink B(protecting window place); 9-heat-conducting buffer bed course.
The specific embodiment
As shown in Figure 1, high-power semiconductor laser system of processing of the present invention, comprises housing, semiconductor laser light source system 1, protecting window 3 and cooling system.
Semiconductor laser light source system is fixedly installed in enclosure system, and protecting window is fixedly installed in the front end of housing, keeps suitable gap with semiconductor laser light source system light out part.The main body of protecting window is double-layer plate structure, two-layer between filled vacuum.Plate material can be selected the material mating with protecting window frame for installing thermal coefficient of expansion.Conventionally frame for installing is high-thermal conductive metal material, therefore can select double-layer plate to select quartz glass material.
Semiconductor laser light source system comprises semiconductor laser light source, light beam focus module.Except the heat radiation of traditional scheme noise spectra of semiconductor lasers light source itself, the present invention is also dispelled the heat to light beam focus module.In enclosure interior, be provided with water-cooling channel, water-cooling channel comprises inlet segment, water exit end and kink A, B.Kink A, B are respectively used to light beam focus module, protecting window to carry out cooling.
Kink A is specifically as follows " several " font makes current cover the bottom of light beam focus module as far as possible.In addition, kink A both can meet respectively inlet segment, kink B by head and the tail; Also can be divided into relative (the not directly being communicated with) two parts in position as shown in Figure 1, part head and the tail meet respectively inlet segment, kink B, and another part head and the tail connect respectively kink B, water exit end.
The object of blow dried is to adopt to pass into dry compressed air or inert gas, as nitrogen, helium etc., the aqueous vapor in housing is discharged, thereby avoids the generation of condensed water in housing, environment for use and the life-span of improving folded battle array.In order to improve the effect of hydrofuge, the terminal of air inlet and the terminal of exhaust outlet be at the both direction of housing, and dry gas respectively sweeping is crossed the internal parts such as folded battle array, lens, reaches best hydrofuge effect, and make in housing be wetlyly all discharged from.
Front end head arranged outside at housing has air jet system, the oblique setting of the jet mouth of pipe of air jet system.The chip that can avoid like this producing on the work top injury protection window that splashes.
Eyeglass clamping contact position in light beam focus module is provided with heat-conducting buffer bed course, the thermal coefficient of expansion of heat-conducting buffer bed course, between the thermal coefficient of expansion of light beam focus module and the thermal coefficient of expansion of gripping element, has reduced the stress between light beam focus module and gripping element.Such as heat-conducting buffer bed course, select indium membrane material etc., can either increasing heat radiation area the flexible clamping to eyeglass simultaneously, also improved the reliability installing additional.
Claims (6)
1. high-power semiconductor laser system of processing, comprise housing, semiconductor laser light source system and protecting window, wherein, semiconductor laser light source system is fixedly installed in housing, protecting window is fixedly embedded in the front end head of housing, on the optical axis of the center of protecting window in semiconductor laser light source system bright dipping light path; Described semiconductor laser light source system comprises semiconductor laser light source and light beam focus module, the clamping device of light beam focus module is mounted on the inner bottom surface of housing by radiating block, in the eyeglass clamping contact position of light beam focus module, be provided with heat-conducting buffer bed course; In enclosure interior, Packed water-cooling channel is set, this water-cooling channel forms annular water route from water inlet to delivery port at housing bottom, mainly be divided into inlet segment, kink A, kink B and water exit end, wherein inlet segment and water exit end lay respectively at enclosure interior both sides and be arranged in parallel, between the inner bottom surface of the housing of radiating block and correspondence position, be provided with passage along light beam focus module bent radial as described kink A, for light beam focus module is dispelled the heat; Described kink B is positioned at the front end head of housing around protecting window, for protecting window is dispelled the heat.
2. high-power semiconductor laser system of processing according to claim 1, is characterized in that: described heat-conducting buffer bed course adopts indium membrane material.
3. high-power semiconductor laser system of processing according to claim 1, it is characterized in that: on housing, be also provided with air inlet and exhaust outlet, dry gas is entered after the inswept semiconductor laser light source of housing inner chamber and light beam focus module by exhaust outlet Natural excrement by air inlet.
4. high-power semiconductor laser system of processing according to claim 1, is characterized in that: the front end head arranged outside at housing has air jet system the oblique setting of the jet mouth of pipe of air jet system.
5. high-power semiconductor laser system of processing according to claim 1, is characterized in that: the main body of described protecting window is double-layer plate structure, and material is quartz glass, two-layer between filled vacuum.
6. high-power semiconductor laser system of processing according to claim 1, is characterized in that: protecting window and semiconductor laser light source system bright dipping end keep the gap of 3-5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310525919.8A CN103537795B (en) | 2013-10-29 | 2013-10-29 | High-power semiconductor laser system of processing |
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| CN201310525919.8A CN103537795B (en) | 2013-10-29 | 2013-10-29 | High-power semiconductor laser system of processing |
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| CN103537795A true CN103537795A (en) | 2014-01-29 |
| CN103537795B CN103537795B (en) | 2016-03-30 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226487A (en) * | 2015-10-26 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser scanning device |
| CN105215558A (en) * | 2015-10-26 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser cutting device |
| CN111712975A (en) * | 2018-02-09 | 2020-09-25 | 三菱电机株式会社 | Optical module |
| CN113078551A (en) * | 2021-03-30 | 2021-07-06 | 梁娟 | High-power semiconductor laser |
| CN113363802A (en) * | 2021-01-29 | 2021-09-07 | 安徽科技学院 | High-power semiconductor laser lens cooling system |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106112262A (en) * | 2016-08-26 | 2016-11-16 | 南京英田光学工程股份有限公司 | Heat radiation laser lens and laser instrument |
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| GB1462062A (en) * | 1973-12-05 | 1977-01-19 | Atomic Energy Authority Uk | Laser anemometer probes |
| JP2001358397A (en) * | 2000-06-15 | 2001-12-26 | Matsushita Electric Ind Co Ltd | Laser heating device |
| JP2002144073A (en) * | 2000-11-07 | 2002-05-21 | Matsushita Electric Ind Co Ltd | Optical processor |
| CN202960764U (en) * | 2012-11-22 | 2013-06-05 | 西安炬光科技有限公司 | Double-side refrigerating semi-conductor laser system for medical beautification |
| CN203227932U (en) * | 2013-05-17 | 2013-10-09 | 武汉梅曼科技有限公司 | Multi-layer gas curtain laser cutting head |
| CN203621726U (en) * | 2013-10-29 | 2014-06-04 | 西安炬光科技有限公司 | High power semiconductor laser processing system |
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2013
- 2013-10-29 CN CN201310525919.8A patent/CN103537795B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| GB1462062A (en) * | 1973-12-05 | 1977-01-19 | Atomic Energy Authority Uk | Laser anemometer probes |
| JP2001358397A (en) * | 2000-06-15 | 2001-12-26 | Matsushita Electric Ind Co Ltd | Laser heating device |
| JP2002144073A (en) * | 2000-11-07 | 2002-05-21 | Matsushita Electric Ind Co Ltd | Optical processor |
| CN202960764U (en) * | 2012-11-22 | 2013-06-05 | 西安炬光科技有限公司 | Double-side refrigerating semi-conductor laser system for medical beautification |
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| CN203621726U (en) * | 2013-10-29 | 2014-06-04 | 西安炬光科技有限公司 | High power semiconductor laser processing system |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226487A (en) * | 2015-10-26 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser scanning device |
| CN105215558A (en) * | 2015-10-26 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser cutting device |
| CN111712975A (en) * | 2018-02-09 | 2020-09-25 | 三菱电机株式会社 | Optical module |
| CN113363802A (en) * | 2021-01-29 | 2021-09-07 | 安徽科技学院 | High-power semiconductor laser lens cooling system |
| CN113078551A (en) * | 2021-03-30 | 2021-07-06 | 梁娟 | High-power semiconductor laser |
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| Publication number | Publication date |
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| CN103537795B (en) | 2016-03-30 |
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Address after: 710119 high tech Zone, Shaanxi, Xi'an new industrial park information Avenue, building 17, building three, floor 10 Applicant after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710119 high tech Zone, Shaanxi, Xi'an new industrial park information Avenue, building 17, building three, floor 10 Applicant before: Xi'an Focuslight Technology Co., Ltd. |
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