CN103531559A - Flip chip bonding structure and forming method thereof - Google Patents
Flip chip bonding structure and forming method thereof Download PDFInfo
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- CN103531559A CN103531559A CN201310492900.8A CN201310492900A CN103531559A CN 103531559 A CN103531559 A CN 103531559A CN 201310492900 A CN201310492900 A CN 201310492900A CN 103531559 A CN103531559 A CN 103531559A
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- chip
- flip
- bonding structure
- chip bonding
- zinc ball
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention provides a flip chip bonding structure and a forming method thereof. The flip chip bonding structure comprises a chip and a substrate. The chip is bonded with the substrate through a zinc ball. Since the chip and the substrate are bonded together through the zinc ball and the melting point of the zinc ball is high (usually the melting point of zinc is 419.5DEG C and is higher than the temperature of a reflow soldering process), the problem that a short circuit is caused due to a reason that the zinc ball is collapsed and melted can be avoided; since the zinc ball is a finished product, in the forming process of the flip chip bonding structure, the slow copper pillar growth process similar to a process of bonding the chip and the substrate together through the copper pillar is avoided, the production cost of the flip chip bonding structure is low and the process is simple and convenient.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly a kind of flip-chip bonding structure and forming method thereof.
Background technology
Chip is fixed or physical connection is called bonding to substrate.The method of bonding mainly contains: chip bonding, Bonding and flip-chip bonding.Flip-chip bonding is the technique that forms salient point and be directly connected to PCB substrate or metal substrate on the connection pad of chip.Flip-chip bonding techniques has obvious advantage: packaging density is the highest; There is good electricity and hot property; Good reliability; Cost is low.This technology can realize towards more gadget development aspect electronic product, so people have caused very large concern to flip-chip bonding.
In traditional flip-chip bonding technology, described salient point is ashbury metal ball, and tin is the material of a kind of fusing point lower (fusing point approximately: 231.89 ℃), when the salient point of being made by ashbury metal ball carries out bonding, tends to occur that salient point caves in; And there will be adjacent salient point to be melted in together, thereby there is short circuit phenomenon.Test is found: diameter is the tin ball (as salient point) of 250 microns of left and right, before carrying out bonding technology, (be that solder ball bump is only formed on chip, not yet by chip bonding to substrate), its often because softening/melt phenomenon, and become length, be that 455 microns of left and right, width are 410 microns of left and right, are highly the spheroid shape of 60～90 microns.Especially, above-mentioned test is the situation before carrying out bonding technology, that is to say, after carrying out bonding technology, the cave in/thawing problem of solder ball bump can be more serious.
For this reason, in existing technique, proposing again to utilize copper post to replace ashbury metal ball salient point is connected to chip on substrate.Copper is the material of a kind of fusing point very high (fusing point approximately: 1083.4 ℃), common, the technological temperature of the Reflow Soldering of using during bonding is about 350 ℃, utilizes thus copper post to replace ashbury metal ball salient point and chip is connected to the problem that can avoid copper post to cave on substrate and cause short circuit.But the formation of copper post slowly forms by growth technique, so its cost is very high, simultaneously because the restriction of technique can not be done very highly.
To sum up, how a kind of flip-chip bonding structure and flip-chip bonding method are provided, especially, how to provide a kind of material or method so that chip is connected on substrate, it can either meet the technological temperature requirement of Reflow Soldering, avoid caving in and cause the problem of short circuit, low production cost, simple process simultaneously, this has become those skilled in the art's difficult problem urgently to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of flip-chip bonding structure and forming method thereof, to solve in existing flip-chip bonding technology, thereby salient point easily caves in and causes the problem of short circuit or manufacturing cost is higher, manufacturing process difficulty is larger problem.
For solving the problems of the technologies described above, the invention provides a kind of flip-chip bonding structure, described flip-chip bonding structure comprises: chip and substrate, described chip is bonded together by zinc ball and described substrate.
Optionally, in described flip-chip bonding structure, described chip surface is formed with metal pad and passivation layer, and described passivation layer is positioned at described metal pad surrounding; Described metal pad surface is formed with the coat of metal.
Optionally, in described flip-chip bonding structure, described metal coating surface is formed with weld layer, and the material of described weld layer is ashbury metal.
Optionally, in described flip-chip bonding structure, described substrate surface is formed with weld layer, and the material of described weld layer is ashbury metal.
The present invention also provides a kind of flip-chip bonding structure formation method, and described flip-chip bonding structure formation method comprises: chip is provided; On described chip, form zinc ball; By described zinc ball by described chip bonding to substrate.
Optionally, in described flip-chip bonding structure formation method, by silk-screen printing technique, on described chip, form zinc ball.
Optionally, in described flip-chip bonding structure formation method, after chip is provided, form zinc ball on described chip before, also comprise:
At described chip surface, form metal pad and passivation layer, wherein, described passivation layer is positioned at described metal pad surrounding;
On described metal pad surface, form the coat of metal.
Optionally, in described flip-chip bonding structure formation method, after described metal pad surface forms the coat of metal, form zinc ball on described chip before, also comprise:
At described metal coating surface, form weld layer.
Optionally, in described flip-chip bonding structure formation method, form zinc ball on described chip after, by described zinc ball by before on described chip bonding to substrate, also comprise:
At described substrate surface, form weld layer.
Optionally, in described flip-chip bonding structure formation method, after chip is provided, form zinc ball on described chip before, also comprise:
On described zinc ball surface, form weld layer.
In flip-chip bonding structure provided by the invention and forming method thereof, by zinc ball, chip and substrate are bonded together, because the fusing point of described zinc ball is high (common, the fusing point of zinc is 419.5 degrees Celsius, temperature higher than reflow soldering process), therefore can avoid zinc ball to cave in, melt the problem that causes short circuit; Simultaneously, because zinc ball is a finished product, in flip-chip bonding structure forming process, avoided being similar to when chip and substrate are bonded together by copper post copper post growth course slowly, thus the low production cost of flip-chip bonding structure, simple process.
Accompanying drawing explanation
Fig. 1 is the generalized section of the flip-chip bonding structure of the embodiment of the present invention.
Embodiment
Flip-chip bonding structure the present invention being proposed below in conjunction with the drawings and specific embodiments and forming method thereof is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, by zinc ball, chip and substrate are bonded together, because the fusing point of described zinc ball is high, (common, the fusing point of zinc is 419.5 degrees Celsius, temperature higher than reflow soldering process), therefore can avoid zinc ball to cave in, melt the problem that causes short circuit; Simultaneously, because zinc ball is a finished product, in flip-chip bonding structure forming process, avoided being similar to when chip and substrate are bonded together by copper post copper post growth course slowly, thus the low production cost of flip-chip bonding structure, simple process.
Concrete, please refer to Fig. 1, the generalized section of the flip-chip bonding structure that it is the embodiment of the present invention.As shown in Figure 1, described flip-chip bonding structure comprises: chip (Die) 10 and substrate (Lead Frame) 12, described chip 10 is bonded together by zinc ball (Zn Sphere) 11 and described substrate 12.Wherein, described zinc ball 11 is finished product, and, before manufacturing/form flip-chip bonding structure, described zinc ball 11 has been made.Preferably, the diameter of described zinc ball 11 is 10 microns～1000 microns, and for example, the diameter of described zinc ball 11 is 50 microns, 200 microns, 300 microns, 500 microns, 700 microns or 950 microns etc., and this application is not limited.Because described zinc ball 11 has been made (finished product) in advance, thus, both can be similar to when chip and substrate are bonded together by copper post copper post growth course slowly, thus the low production cost of flip-chip bonding structure, simple process; Can guarantee that again the quality of described zinc ball 11 is (because described zinc ball 11 is finished products, when finding that the quality of described zinc ball 11 does not pass a test, can avoid using described zinc ball 11, thereby also just guaranteed the quality of the zinc ball 11 that uses), and then also just can guarantee quality and the reliability of formed flip-chip bonding structure.
In the present embodiment, described chip 10 surfaces are formed with metal pad (Final Metal Pad) 13 and passivation layer (Die Passivation) 14, and described passivation layer 14 is positioned at described metal pad 13 surroundings; Described metal pad 13 surfaces are formed with the coat of metal (Under Bump Metallization, UBM) 15.By said structure, particularly the described coat of metal 15 can make described chip 10 have better adhesion with other structures, particularly metal structure, thereby improves quality and the reliability of formed flip-chip bonding structure.Preferably, the material of the described coat of metal 15 is the stack of nickel, palladium and three kinds of coating of gold, and wherein, the thickness of these three kinds of coating is adjustable, and the minimum thickness of each coating can be 0.
Further, in the present embodiment, the described coat of metal 15 surfaces are formed with weld layer 16(for the ease of distinguishing, follow-up first weld layer 16 that is called of weld layer 16 that the coat of metal 15 surfaces form), the material of described the first weld layer 16 is ashbury metal; Described substrate 12 surfaces are formed with weld layer 17(for the ease of distinguishing, follow-up second weld layer 17 that is called of weld layer 17 that substrate 12 surfaces form), the material of described the second weld layer 17 is also ashbury metal.That is to say, in the present embodiment, described zinc ball 11 is bonded together described chip 10 by the first weld layer 16 and the second weld layer 17 with described substrate 12, because tin welding layer has better welding performance, thereby can make described zinc ball 11 that described chip 10 is firmly bonded together with described substrate 12, and then improve quality and the reliability of formed flip-chip bonding structure.
Accordingly, the present embodiment also provides a kind of formation method of above-mentioned flip-chip bonding structure, and the formation method of described flip-chip bonding structure comprises: chip 10 is provided; On described chip 10, form zinc ball 11; By described zinc ball 11, described chip 10 is bonded on a substrate 12.
Preferably, by silk-screen printing technique, on described chip 10, form zinc ball 11.Because silk-screen printing technique can disposablely form a plurality of zinc balls 11 on a plurality of chips 10, be that silk-screen printing technique is convenient to extensive generation, thereby can further reduce manufacturing cost, the simplified manufacturing technique of flip-chip bonding structure, therefore, in the present embodiment, preferably by silk-screen printing technique, on described chip 10, form zinc ball 11.
In the present embodiment, after chip 10 is provided, form zinc ball 11 on described chip 10 before, further comprise: on described chip 10 surfaces, form metal pad 13 and passivation layer 14, wherein, described passivation layer 14 is positioned at described metal pad 13 surroundings; On described metal pad 13 surfaces, form the coat of metal 15; On the described coat of metal 15 surfaces, form the first weld layer 16.Further, form zinc ball 11 on described chip 10 after, before described chip 10 being bonded on a substrate 12 by described zinc ball 11, also comprise: on described substrate 12 surfaces, form the second weld layer 17.Thus, described zinc ball 11 is bonded together described chip 10 by the first weld layer 16 and the second weld layer 17 with described substrate 12, because tin welding layer has better welding performance, thereby can make described zinc ball 11 that described chip 10 is firmly bonded together with described substrate 12, and then improve quality and the reliability of formed flip-chip bonding structure.
In the present embodiment, described the first weld layer 16 and the second weld layer 17 are equivalent at the coat of metal 15 and substrate 12 surfaces, form respectively, are then connected to zinc ball 11(again and are equivalent to form on zinc ball 11 surfaces).In other embodiment of the application, the process of above-mentioned formation the first weld layer 16 and the second weld layer 17 also can be contrary, and zinc ball 11 surfaces form the first weld layer 16 and the second weld layer 17 now, then are connected to the coat of metal 15 and substrate 12 surfaces.
After forming above-mentioned flip-chip bonding structure, then can continue to carry out other integrated circuit fabrication process, such as carrying out device performance test etc., this application is repeated no more.
In sum, in flip-chip bonding structure providing in the embodiment of the present invention and forming method thereof, by zinc ball, chip and substrate are bonded together, because the fusing point of described zinc ball is high (common, the fusing point of zinc is 419.5 degrees Celsius, temperature higher than reflow soldering process), therefore can avoid zinc ball to cave in, melt the problem that causes short circuit; Simultaneously, because zinc ball is a finished product, in flip-chip bonding structure forming process, avoided being similar to when chip and substrate are bonded together by copper post copper post growth course slowly, thus the low production cost of flip-chip bonding structure, simple process.
Foregoing description is only the description to preferred embodiment of the present invention, the not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure, all belong to the protection range of claims.
Claims (10)
1. a flip-chip bonding structure, is characterized in that, comprising: chip and substrate, described chip is bonded together by zinc ball and described substrate.
2. flip-chip bonding structure as claimed in claim 1, is characterized in that, described chip surface is formed with metal pad and passivation layer, and described passivation layer is positioned at described metal pad surrounding; Described metal pad surface is formed with the coat of metal.
3. flip-chip bonding structure as claimed in claim 2, is characterized in that, described metal coating surface is formed with weld layer, and the material of described weld layer is ashbury metal.
4. flip-chip bonding structure as claimed in claim 1, is characterized in that, described substrate surface is formed with weld layer, and the material of described weld layer is ashbury metal.
5. a flip-chip bonding structure formation method, is characterized in that, comprising: chip is provided; On described chip, form zinc ball; By described zinc ball by described chip bonding to substrate.
6. flip-chip bonding structure formation method as claimed in claim 5, is characterized in that, forms zinc ball by silk-screen printing technique on described chip.
7. flip-chip bonding structure formation method as claimed in claim 5, is characterized in that, after chip is provided, before forming zinc ball, also comprises on described chip:
At described chip surface, form metal pad and passivation layer, wherein, described passivation layer is positioned at described metal pad surrounding;
On described metal pad surface, form the coat of metal.
8. flip-chip bonding structure formation method as claimed in claim 7, is characterized in that, after described metal pad surface forms the coat of metal, before forming zinc ball, also comprises on described chip:
At described metal coating surface, form weld layer.
9. flip-chip bonding structure formation method as claimed in claim 8, is characterized in that, form zinc ball on described chip after, by described zinc ball by before on described chip bonding to substrate, also comprise:
At described substrate surface, form weld layer.
10. flip-chip bonding structure formation method as claimed in claim 5, is characterized in that, after chip is provided, before forming zinc ball, also comprises on described chip:
On described zinc ball surface, form weld layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310492900.8A CN103531559A (en) | 2013-10-18 | 2013-10-18 | Flip chip bonding structure and forming method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310492900.8A CN103531559A (en) | 2013-10-18 | 2013-10-18 | Flip chip bonding structure and forming method thereof |
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| CN103531559A true CN103531559A (en) | 2014-01-22 |
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| CN201310492900.8A Pending CN103531559A (en) | 2013-10-18 | 2013-10-18 | Flip chip bonding structure and forming method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1206328A (en) * | 1997-06-23 | 1999-01-27 | 福特汽车公司 | Method of forming interconnections on electronic modules |
| CN2845167Y (en) * | 2005-06-14 | 2006-12-06 | 威盛电子股份有限公司 | Reversed sheet packing structure |
| US20080012131A1 (en) * | 2006-04-12 | 2008-01-17 | Oki Electric Industry Co., Ltd | Semiconductor device, mounting construction of a semiconductor device, and method of manufacturing the semiconductor device with the mounting construction |
| CN101207052A (en) * | 2006-12-15 | 2008-06-25 | 株式会社日立工业设备技术 | Screen printing apparatus and heave forming method |
| US20080217386A1 (en) * | 2007-03-07 | 2008-09-11 | Shinko Electric Industries Co., Ltd. | Conductive ball mounting apparatus and conductive ball mounting method |
-
2013
- 2013-10-18 CN CN201310492900.8A patent/CN103531559A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1206328A (en) * | 1997-06-23 | 1999-01-27 | 福特汽车公司 | Method of forming interconnections on electronic modules |
| CN2845167Y (en) * | 2005-06-14 | 2006-12-06 | 威盛电子股份有限公司 | Reversed sheet packing structure |
| US20080012131A1 (en) * | 2006-04-12 | 2008-01-17 | Oki Electric Industry Co., Ltd | Semiconductor device, mounting construction of a semiconductor device, and method of manufacturing the semiconductor device with the mounting construction |
| CN101207052A (en) * | 2006-12-15 | 2008-06-25 | 株式会社日立工业设备技术 | Screen printing apparatus and heave forming method |
| US20080217386A1 (en) * | 2007-03-07 | 2008-09-11 | Shinko Electric Industries Co., Ltd. | Conductive ball mounting apparatus and conductive ball mounting method |
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Application publication date: 20140122 |
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