CN103531464B - Etching method for silicon nitride high depth-to-width ratio hole - Google Patents
Etching method for silicon nitride high depth-to-width ratio hole Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 69
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 52
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000007789 gas Substances 0.000 claims abstract description 77
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 230000001590 oxidative effect Effects 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 229920000642 polymer Polymers 0.000 claims abstract description 17
- 229920002313 fluoropolymer Polymers 0.000 claims abstract description 14
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- 239000012895 dilution Substances 0.000 claims abstract description 8
- 238000010790 dilution Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 24
- 238000012876 topography Methods 0.000 claims description 14
- 239000010410 layer Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 9
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 7
- 208000002925 dental caries Diseases 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229920006254 polymer film Polymers 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000005728 strengthening Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 8
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000013000 chemical inhibitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses an etching method for a silicon nitride high depth-to-width ratio hole. The method comprises: first of all, placing a semiconductor device of a silicon nitride film, already forming the graph needed by a semiconductor, into en etching cavity; then using a dry-method plasma technology, letting in a high carbon chain molecule fluorocarbon-based gas, an oxidizing gas, a dilution gas and a fluorocarbon-based gas containing hydrogen, adding radio frequency power and exciting plasma; and after a plasma stabilization step, performing etching of the silicon nitride film until the etching morphology, the hole diameter size and the depth of a high depth-to-width ratio hole reach requirements. According to the invention, the silicon nitride film is etched by using the unique fluorocarbon-based gas, through adjusting gas component and power size, the deposition amount of fluorocarbon polymers on the side wall of the deep hole can be controlled, the key dimensions of the hole can be prevented from becoming larger, and polymers already deposited at the bottom of the deep hole can be removed so as to ensure that the etching can be continued, thus the etching morphology of the hole can be adjusted.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacture field, more particularly, it relates to a kind of silicon nitride film is advanced wide
Than the lithographic method in hole.
Background technology
Contact hole etching is the key technology of super large-scale integration, as CMOS is into the technique epoch after 32nm,
High-aspect-ratio hole etches and its fill the yield to device considerable influence.For advanced memorizer, depth-to-width ratio
More than 40: 1 ratio is reached, this causes challenge huger.
The medium of the contact hole etching of traditional cmos device is silica membrane, is situated between as the extensive electricity of Another Application
Material silicon nitride, due to its K value and stress is larger does not almost use it as ILD layer.It is mainly used in hard mask, etching
Or the stop-layer of CMP.
It is similar with the etching of silicon oxide film, for silicon nitride film, typically adopt carbon fluorine base gas such as CF4、CHF3、
CH2F2、CH3F etc. is etching.Currently, in main stream of CMOS IC manufacturing, the medium of contact hole etching with silicon dioxide is
It is main, do not use silicon nitride.But, with one kind electricity that the deep development of semiconductor integrated circuit, silicon nitride are etched as hole
Dielectric material, has ample scope for abilities in three, five race's photoelectric crystal devices.
For silicon nitride, from material for, the growth of silicon nitride, prepare it is general by the way of PECVD and LPCVD,
, compared with silicon oxide, the bond energy of silicon nitride is relatively low, it is easy to open for which, so the gas of etching silicon dioxide may serve to etching
Silicon nitride, and higher etching speed can be obtained.Difference is that silicon nitride is being etched using hydrogen-containing carbon fluorine base gas
When, it is easy to polymer is produced, is difficult to remove if in deep hole, easily affect the size of the steepness and CD of deep hole.Therefore,
When need prepare depth-to-width ratio for more than 5: 1 (CD is in 100nm or so) deep hole when, polymer side wall deposition amount it is many as little as
Close important, it determines the process of the pattern of etching and reaction.If polymer, is difficult to obtain preferable etch topography very little,
And select than low, it is difficult to the size of the critical size CD of control hole；If however, depositing too many fluorocarbon polymer in deep hole
Thin film, then play a part of chemical inhibitor by offside wall and bottom, and etching can be caused to stop.
Accordingly, it would be desirable to a kind of hole lithographic method of the silicon nitride film that can control fluorocarbon polymer deposition amount in deep hole.
The content of the invention
The purpose of the present invention is the defect for overcoming prior art, there is provided a kind of etching side in silicon nitride film high-aspect-ratio hole
Method, not only can control the deposition of the fluorocarbon polymer on the wall of deep hole side but also can remove be deposited on the polymer of deep hole bottom with
Ensure that etching can proceed, and then be capable of the etch topography of adjustment hole.
The technical scheme for realizing the object of the invention is：
A kind of lithographic method of silicon nitride high depth-to-width ratio hole, first will be the silicon nitride for having formed quasiconductor required figure thin
The semiconductor device of film is put in etching cavity, is then also comprised the steps：Using dry plasma process, to the quarter
High carbon chain molecular carbon fluorine base gas, oxidizing gas, hydrogen-containing carbon fluorine base gas are passed through in erosion cavity, radio-frequency power are added, is excited
Go out plasma；After plasma stability step, the etching of silicon nitride film is carried out, until the etch topography in the hole,
Pore size and depth reach requirement.
Wherein, the high carbon chain molecular carbon fluorine base gas also produces the polymer of carbon containing fluorine while etch silicon nitride
Thin film deposition in hole sidewalls and bottom, so as to form anisotropic etching to silicon nitride；The hydrogen-containing carbon fluorine base gas exists
While etching and lift etching speed to the chemical of silicon nitride film, also produce the polymer molecule containing carbon fluorine and also deposit
In hole sidewalls and bottom；The fluorocarbon polymer of the bottom in the hole is bombarded and is reacted away so that etching by the oxidizing gas
It is unlikely to stop, while the fluorocarbon polymer of the hole deposited on sidewalls is removed a part, another portion by the oxidizing gas
Fluorocarbon polymer is divided to be retained on the wall of the hole side.
When the high carbon chain molecular carbon fluorine base gas is increased so as to increase the amount of polymer, the pattern in the hole is slightly to incline
Tiltedly；When the oxidizing gas are increased, the pattern in the hole is steep；By by parameter regulation between said two devices
When, you can obtain the etch topography in different holes according to demand.
Preferably, high carbon chain molecular carbon fluorine base gas, oxidizing gas, hydrogen-containing carbon fluorine is being passed through into the etching cavity
While base gas, the dilution gas for forming stable plasma is also passed through.
Wherein described high carbon chain molecular carbon fluorine base gas is selected from C4F6、C4F8In at least one；The carbon fluorine base gas is selected from
CHF3、CH2F2And CH3At least one in F；The oxidizing gas are O2；The dilution property gas is He or Ar.
In one embodiment, when etching the high-aspect-ratio hole of steep pattern, the micro semiconductor Primo-DRIE chambers using in
Body, using dijection display system, high frequency is 60MHz, and low frequency is 2MHz, uncoupling between the two, low-and high-frequency power selection 500W/
1500W, chamber pressure are maintained at 40mt, and being passed through gas includes：30sccm C4F8, 70sccm CH2F2, 80sccm O2,
300sccm Ar。
In another embodiment, when etching slightly inclines the high-aspect-ratio hole of pattern, the micro semiconductor Primo- using in
DRIE cavitys, using dijection display system, high frequency is 60MHz, and low frequency is 2MHz, uncoupling between the two, low-and high-frequency power selection
500W/1500W, chamber pressure are maintained at 40mt, and being passed through gas includes：40sccm C4F8,70sccm CH2F2,80sccm
O2,300sccm Ar.
In yet another embodiment, it is characterised in that the profundity width for slightly inclining pattern can also be etched in the following manner
Compare hole：The micro semiconductor Primo-DRIE cavitys using in, using dijection display system, high frequency is 60MHz, and low frequency is 2MHz, both
Between uncoupling, low-and high-frequency power selection 500W/1500W, chamber pressure 40mt, being passed through gas includes：30sccm C4F8,
70sccm CH2F2,70sccm O2,300sccm Ar.
Semiconductor device of the present invention is single layer structure, and etching stopping is on a silicon substrate；Or the semiconductor device
For multiple structure, etching stopping is on or below dielectric layer.The material of its dielectric layer is silicon oxide, silicon or other substrates.
The lithographic method in silicon nitride film high-aspect-ratio hole of the present invention is thin using unique carbon fluorine base gas etch silicon nitride
Film, by adjusting gas component, watt level, realizes the anisotropy to silicon nitride deep hole and quick etching, both can control
The deposition of the fluorocarbon polymer on the wall of deep hole side avoids the critical size in hole from becoming big, again removable and has been deposited on deep hole bottom
Polymer can be proceeded with ensureing etching, and then be capable of the etch topography of adjustment hole, obtain satisfied high-aspect-ratio hole
Structure.
Description of the drawings
Fig. 1 is the chip of the silicon nitride film structure for going out required figure with photoetching development of the present invention；
During Fig. 2 is one embodiment of the invention, the steep etch topography section in the high-aspect-ratio hole of single-layer silicon nitride silicon thin film
Figure；
During Fig. 3 is another embodiment of the present invention, the summary bevel etched pattern in the high-aspect-ratio hole of single-layer silicon nitride silicon thin film
Sectional view；
Fig. 4 is for, in another embodiment of the invention, the etch topography in the high-aspect-ratio hole of multiple structure silicon nitride film cuts
Face figure.
Specific embodiment
Below in conjunction with accompanying drawing and by taking specific embodiment as an example, the present invention is described in detail.But, art technology
Personnel as long as meeting the spirit of the present invention, should it should also be understood that the invention is not restricted to listed specific embodiment
It is included in protection scope of the present invention.
The lithographic method of silicon nitride high depth-to-width ratio hole of the present invention comprises the steps：
The chip for going out the silicon nitride film structure of required figure with photoetching development is put into into etching cavity first；Then adopt
With dry plasma process, high carbon chain molecular carbon fluorine base gas, oxidizing gas, dilution property gas, hydrogen-containing carbon is passed through fluorine-based
Gas, adds radio-frequency power, inspires plasma；After plasma stability step, the etching of silicon nitride film is carried out,
Until the etch topography and pore size in high-aspect-ratio hole and depth reach requirement.
The high carbon chain molecular carbon fluorine base gas of the present invention can be from C4F6、C4F8It is middle to select at least one；Hydrogen-containing carbon fluorine base gas
Can be from CHF3、CH2F2And CH3At least one is selected in F；Oxidizing gas are O2；Dilution property gas is He or Ar.
Wherein, high carbon chain molecular carbon fluorine base gas C4F6Or C4F8In addition to for etch silicon nitride, prior is energy
The thin polymer film of more carbon containing fluorine is enough produced, hole sidewalls and bottom is deposited on, so that anisotropy is formed to silicon nitride
Etching.Similarly, hydrogen-containing carbon fluorine base gas CHF3、CH2F2Or CH3F is mainly used in the chemical to silicon nitride film and etches,
Etching speed is lifted, the polymer molecule containing carbon fluorine can be also produced during the course of the reaction and also is deposited upon hole sidewalls and bottom；
Oxidizing gas O2Polymer that is having been produced for complementary removal and producing in etching process, by the bottom in hole
Fluorocarbon polymer bombards and reacts away so that etching is unlikely to stopping, carbon fluorine polymerization of the simultaneous oxidation gas to deposited on sidewalls
The removal effect of thing is slightly weak, and the fluorocarbon polymer of deposited on sidewalls can retain a part.Dilution property gas He or Ar are used for swashing
Plasma is sent out, stable plasma and regulation and control etching speed is formed.
The lithographic method in the silicon nitride film high-aspect-ratio hole of the present invention, can etch the not similar shape of deep hole as needed
Looks, and do not change etched hole shape characteristic in other respects.When increasing high carbon chain molecular carbon fluorine base gas so as to increasing
During the amount of polymer, slightly inclined deep hole can be produced；When oxidizing gas are increased, more steep deep hole can be formed.Therefore,
By the content of the every kind of gas of regulation, the especially content of high carbon chain molecular carbon fluorine base gas and oxidizing gas, it is possible to
The amount of polymer is adjusted, and both depth can be can guarantee that to obtain preferable etch topography, again in the enough polymer of deep hole side wall deposition
The Fluorocarbon polymer film of hole bottom deposit does not excessively cause etching to stop.
Said method is described in further detail below in conjunction with the drawings and specific embodiments.
The etching apparatus of specific embodiment of the invention micro semiconductor Primo-DRIE cavitys using in, using Double RF system
System, high frequency are mainly used to produce plasma for 60MHz, for adjusting plasma density；Low frequency be 2MHz be used for strengthen from
Sub- energy and bombardment intensity, lift etching directivity.It is uncoupling between the two, in order to avoid influence each other.This allows to root
Different optimizations are carried out according to the concrete feature of etching deep hole, and does not change institute's etched hole shape characteristic in other respects.
Such as Fig. 1, using PECVD deposition last layers silicon nitride film 11 on the substrate for forming basic semiconductor structure, adopt
With photoresistance as mask layer 10 (depending on the requirement of different process node, there may come a time when to also need to plus hard mask), needed for making by lithography
Figure.
Such as Fig. 2, in being one embodiment of the invention, the steep etch topography in the high-aspect-ratio hole of single-layer silicon nitride silicon thin film cuts
Face figure.Etching gas are passed through in etching cavity, are excited using radio-frequency power, after plasma stability, carry out silicon nitride
Etching.As one embodiment, preferably C4F8、CH2F2、O2Etc. performing etching.Due to etching apparatus, manufacturer is numerous, parameter here
Setting is by taking the etching apparatus of middle micro semiconductor Primo-DRIE as an example.Chamber pressure is maintained at 40mt, and the gas being passed through includes：
30sccm C4F8, 70sccm CH2F2, 80sccm O2, 300sccm Ar, low-and high-frequency power selection 500W/1500W, so as to etch
Go out steep pattern.
For the etched hole of high-aspect-ratio, above-mentioned steep pattern can bring quite challenge for follow-up filling.Sometimes
For subsequent technique, can by the size of bottom do it is smaller, make slightly inclined pattern.Fig. 3 is another reality of the invention
Apply in example, the summary bevel etched pattern sectional view in the high-aspect-ratio hole of single-layer silicon nitride silicon thin film, the embodiment is by increasing carbon fluorine
Base gas C4F8Flow, strengthen polymer side wall deposition so that laterally etched reduction.The polymer of bottom deposit can be with
The bombardment of property gas is oxidized under low frequency high power to fall, and does not affect anisotropic etching.Finally, form slightly inclined etching
Pattern, such as Fig. 3.Wherein technological parameter can set as follows, low-and high-frequency power selection 500W/1500W, chamber pressure 40mt, lead to
The gas for entering includes：40sccm C4F8, 70sccm CH2F2, 80sccm O2, 300sccm Ar.
In another embodiment, it is also possible to omit bevel etched pattern by adjusting the flow of O2 to obtain：Low-and high-frequency work(
Rate 500W/1500W, chamber pressure 40mt, the gas being passed through include：30sccm C4F8, 70sccm CH2F2, 70sccm O2,
300sccm Ar。
If Fig. 4 is the embodiment of another multiple structure silicon nitride film deep hole etching.Technological parameter can be with parameter
State example.The device of the multilayer semiconductor structure except silicon nitride film 11 and its on mask layer 10 in addition to, also including position
Stop-layer 12 under silicon nitride film 11.The method of the present invention is equally applicable to multiple structure silicon nitride film deep hole quarter
Erosion, its etch topography can be shown in Fig. 2 it is steep, can also be slightly inclination shown in Fig. 3, or therebetween
Etch topography.The present embodiment from unlike above two embodiments, before two embodiments be single layer structure, etching stopping exists
On silicon substrate, and the present embodiment is multiple structure, and, on or below stop-layer 12, the material of stop-layer 12 can be with for etching stopping
It is silicon oxide, silicon or other materials.
It should be noted that above-described embodiment is exemplary rather than limiting the present invention, those skilled in the art are possible to design very
Scope of many alternate embodiments without deviating from appended claims.
Claims (9)
1. a kind of lithographic method of silicon nitride high depth-to-width ratio hole, will form the silicon nitride film of quasiconductor required figure first
Semiconductor device be put in etching cavity, it is characterised in that methods described then also comprises the steps：
Using dry plasma process, be passed through into the etching cavity high carbon chain molecular carbon fluorine base gas, oxidizing gas,
Hydrogen-containing carbon fluorine base gas, adds radio-frequency power, inspires plasma；After plasma stability step, silicon nitride is carried out
The etching of thin film, until the etch topography in the hole, pore size and depth reach requirement；
When the high carbon chain molecular carbon fluorine base gas is increased so as to increase the amount of polymer, the pattern in the hole is slightly to incline；
When the oxidizing gas are increased, the pattern in the hole is steep；By adjust the high carbon chain molecular carbon fluorine base gas and
The content of the oxidizing gas, you can obtain the etch topography in different holes according to demand；
It is 5 that said method is applied to depth-to-width ratio:1 and the above nitridation silicon hole etching；
The etching cavity adopts dijection display system, and high frequency is 60MHz, for producing plasma, for adjusting plasma
Density；Low frequency is 2MHz, for strengthening ion energy and bombardment intensity, lifts etching directivity；Go between the high frequency, low frequency
Coupling.
2. method as claimed in claim 1, it is characterised in that
While etch silicon nitride, the thin polymer film for also producing carbon containing fluorine is deposited on the high carbon chain molecular carbon fluorine base gas
The side wall in hole and bottom, so that form anisotropic etching to silicon nitride；
The hydrogen-containing carbon fluorine base gas is produced while the chemical to silicon nitride film is etched and lifts etching speed, also and is contained
The polymer molecule for having carbon fluorine also is deposited upon the side wall in hole and bottom；
The oxidizing gas by the fluorocarbon polymer of the bottom in the hole bombard and react away so that etching be unlikely to stop, together
The fluorocarbon polymer of the deposited on sidewalls in the hole is removed a part, another part fluorocarbon polymer by Shi Suoshu oxidizing gas
It is retained on the side wall in the hole.
3. method as claimed in claim 1 or 2, it is characterised in that be passed through high carbon chain molecular carbon fluorine into the etching cavity
While base gas, oxidizing gas, hydrogen-containing carbon fluorine base gas, the dilution gas for forming stable plasma is also passed through
Body.
4. method as claimed in claim 3, it is characterised in that the high carbon chain molecular carbon fluorine base gas is selected from C4F6、C4F8In extremely
Few one；The carbon fluorine base gas is selected from CHF3、CH2F2And CH3At least one in F；The oxidizing gas are O2；The dilution
Property gas be He or Ar.
5. method as claimed in claim 4, it is characterised in that during the high-aspect-ratio hole of the steep pattern of etching, micro- using in partly to lead
Body Primo-DRIE cavitys, using dijection display system, high frequency is 60MHz, and low frequency is 2MHz, uncoupling between the two, low-and high-frequency
Power selection 500W/1500W, chamber pressure are maintained at 40mt, and being passed through gas includes：30sccm C4F8, 70sccm CH2F2,
80sccm O2, 300sccm Ar.
6. method as claimed in claim 4, it is characterised in that when etching slightly inclines the high-aspect-ratio hole of pattern, micro- half using in
Conductor Primo-DRIE cavitys, using dijection display system, high frequency is 60MHz, and low frequency is 2MHz, uncoupling between the two, height
Frequency power selection 500W/1500W, chamber pressure are maintained at 40mt, and being passed through gas includes：40sccm C4F8, 70sccm CH2F2,
80sccm O2, 300sccm Ar.
7. method as claimed in claim 4, it is characterised in that can also etch in the following manner slightly incline pattern profundity it is wide
Compare hole：The micro semiconductor Primo-DRIE cavitys using in, using dijection display system, high frequency is 60MHz, and low frequency is 2MHz, both
Between uncoupling, low-and high-frequency power selection 500W/1500W, chamber pressure 40mt, being passed through gas includes：30sccm C4F8,
70sccm CH2F2, 70sccm O2, 300sccm Ar.
8. method as claimed in claim 1, it is characterised in that the semiconductor device is single layer structure, etching stopping is served as a contrast in silicon
On bottom；Or
The semiconductor device is multiple structure, and etching stopping is on or below dielectric layer.
9. method as claimed in claim 8, it is characterised in that the material of the dielectric layer is silicon oxide or silicon.
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| CN201210229544.6A CN103531464B (en) | 2012-07-03 | 2012-07-03 | Etching method for silicon nitride high depth-to-width ratio hole |
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| US10068781B2 (en) * | 2014-10-06 | 2018-09-04 | Lam Research Corporation | Systems and methods for drying high aspect ratio structures without collapse using sacrificial bracing material that is removed using hydrogen-rich plasma |
| TWI653745B (en) * | 2016-09-13 | 2019-03-11 | 日商東芝記憶體股份有限公司 | Semiconductor device and method of manufacturing same |
| CN110571150B (en) * | 2019-09-12 | 2022-09-02 | 长江存储科技有限责任公司 | Etching method of high-aspect-ratio opening and semiconductor device |
| CN115148433A (en) * | 2022-06-15 | 2022-10-04 | 无锡尚积半导体科技有限公司 | Method for improving etching morphology of F-based vanadium oxide |
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