CN103523742A - Radiation dosage detector of MOS structure and preparation method thereof - Google Patents
Radiation dosage detector of MOS structure and preparation method thereof Download PDFInfo
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- CN103523742A CN103523742A CN201310508920.XA CN201310508920A CN103523742A CN 103523742 A CN103523742 A CN 103523742A CN 201310508920 A CN201310508920 A CN 201310508920A CN 103523742 A CN103523742 A CN 103523742A
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Abstract
The invention discloses a radiation dosage detector of a MOS structure and a preparation method of the radiation dosage detector. The radiation dosage detector sequentially comprises a top electrode, a composite oxidization layer, a substrate and a bottom electrode from top to bottom, wherein the composite oxidization layer comprises a thermal oxidation layer and a depositing layer. Because the composite oxidization layer is a structure prepared according to etching and depositing technologies, the MOS structure of the radiation dosage detector is provided with the oxidization layer high in defect concentration and large in thickness. Due to the utilization of the radiation dosage detector of the MOS structure, a large current can be acquired under a low voltage during measurement, sensitivity is improved, and measurement difficulties are reduced.
Description
Technical field
The present invention relates to dose of radiation detector, particularly a kind of MOS(Metal-oxide-semicondutor with high defect oxide layer) the dose of radiation detector of structure, belong to the electromagnetic surveying technology in MEMS.
Background technology
Radiation environment is extensively present in the middle of people's production, life and research: in space environment, have earth-circling Van Allen belt and various cosmic ray; In laboratory, there are the different radioactive elements of experiment use; In the facilities such as nuclear power station, medical institutions, also exist a lot of radioactive sources.In order to understand the character of these radiation environments, radiation detector has become important selection.How manufacturing range, the suitable radiation detector of sensitivity is also the problems that now a lot of researchers actively inquire into.Traditional chemical radiation Dosimetry complicated operation, equipment should not carry, and is difficult to apply widely.And along with MEMS (Micro-electro-mechanicalSystem) technology develops fast, with and the feature of application terminal " light, thin, short, little ", the radiation detector of MEMS technology manufacture starts to be subject to extensive concern, and wherein the radiation detector based on MOS structure is important a kind of.The dose detector of MOS structure has volume little, and range is large, and with the advantage of the fine compatibility of modern integrated technique.
The principle that MOS dose of radiation is surveyed is as follows.The energy gap of the oxide layer that insulating properties is good is large, and electronics and hole are difficult to enter respectively conduction band and valence band and conduct electricity, and removable electric charge is few, therefore resistivity is high under normal conditions.When accepting extraneous irradiation, high-octane ray makes the atomic excitation in oxide layer lattice, and conduction band electron transits to valence band and forms electron hole pair, has reduced resistivity, and after end irradiation due to the effect in warm-up movement and some complex centres, electron-hole recombinations is disappeared.But there are some oxide layers like this, electronics wherein and the mobility in hole differ greatly, if apply a steady electric field when irradiation, under the effect of Coulomb force, both meetings are oppositely moved, and side's migration velocity is faster, when a fast side moves out of oxide layer, just can greatly reduce the probability of recombination.For example, in silica, when the mos gate utmost point adds positive bias, the electrons oxide layer that speeds away, progressively great-jump-forward migration under periodic potential field action of hole, very slow.If now there is E ', in the ，Jiu forbidden bands, defect center such as γ ', produced associated disadvantages energy level, thereby trapped hole is fixed in oxide layer.So just obtained the MOS that has bound charge.During measurement, can utilize thermally stimulated current method to measure trap-charge number, and set up the corresponding relation of itself and dose of radiation, can realize the measurement to dose of radiation.
Yet electric current is very little during the MOS dose of radiation detector measurement existing at present, measure that required voltage is high, temperature is high, greatly increased measurement difficulty.
Summary of the invention
For the problems referred to above, the invention provides dose of radiation detector of a kind of MOS structure and preparation method thereof.Use etching and deposition technology to prepare the MOS structure of high defect concentration, large thickness oxide layer.During measurement, under low voltage, just can obtain larger electric current, improve sensitivity, reduce measurement difficulty.
Technical scheme of the present invention is as follows:
A dose of radiation detector for structure, comprises top electrode from top to bottom successively, combined oxidation layer, and substrate and hearth electrode, described combined oxidation layer comprises again thermal oxide layer and illuvium.
Further, described thermal oxide layer is formed through thermal oxide by patterned substrate.
Further, described patterned substrate is column or network structure.
Further, described illuvium consists of identical oxide with thermal oxide layer.
Further, described substrate comprises silicon substrate, and described combined oxidation layer comprises dioxide composite silicon layer.
Further, described top electrode and hearth electrode are metal electrode, and described metal comprises aluminium and gold.
Further, above-mentioned illuvium is chemical vapor deposition (CVD) layer.
Preparation method is as follows for this dose of radiation detector:
1) substrate graph;
2) patterned substrate is carried out to thermal oxide, form thermal oxide layer;
3) carry out oxide filling, make oxide be full of above-mentioned thermal oxide layer gap, generate illuvium;
4) on illuvium He under substrate, prepare respectively metal electrode, i.e. top electrode and hearth electrode.
Above-mentioned steps 1) in, can pass through lithographic definition figure, use lithographic technique to realize the graphical of substrate.
Above-mentioned steps 1), in, described substrate comprises silicon substrate.
Above-mentioned steps 2), in, described thermal oxide layer comprises silica column or the network structure by patterned silicon substrate thermal oxide one-tenth.
Above-mentioned steps 3), in, described oxide is identical with the product of patterned substrate thermal oxide.
Above-mentioned steps 3), in, the method for fill oxide comprises chemical vapor deposition (CVD) method.
Above-mentioned steps 4), in, described metal electrode comprises aluminium electrode and gold electrode.
Above-mentioned steps 4), in, can adopt the methods such as sputter, evaporation, plating to prepare metal electrode.
Beneficial effect of the present invention is:
Combined oxidation layer in dose of radiation detector MOS structure of the present invention is owing to being the structure of twice generation, thus there are a lot of interfaces, and also the number of defects of illuvium own is more, makes whole combined oxidation layer have high defect concentration.And substrate is etched to column or network structure, it has highly determined oxidated layer thickness, and substrate thermal oxide CVD are silica-filled, is beneficial to the thicker oxide layer of manufacture, thereby general defect number is increased.Therefore, this structure can be captured more multi-charge when raying, thereby improves device sensitivity, increases and measures electric current.MOS dose of radiation detector of the present invention records the about 450nA of peak point current, than existing MOS dose of radiation detector, conventionally at the electric current of 10pA left and right, improves a lot.
Accompanying drawing explanation
Fig. 1 is the sectional view of the dose of radiation detector of the MOS structure prepared of the embodiment of the present invention.
Fig. 2 (a) carries out the sectional view of silicon substrate after reactive ion etching (RIE) anisotropic etching for the embodiment of the present invention.
Fig. 2 (b) carries out the sectional view of silicon substrate after dark silicon etching (ASE) for the embodiment of the present invention.
Fig. 3 is that the embodiment of the present invention is carried out the sectional view of the thermal oxide layer of thermal oxide formation to silicon substrate.
Fig. 4 is that the embodiment of the present invention is carried out the sectional view of the illuvium of LPCVD deposit formation to the one side of row etching.
Fig. 5 is the sectional view that the embodiment of the present invention is removed the illuvium after the silicon dioxide layer at the row etching back side.
Fig. 6 is the measurement data figure of the embodiment of the present invention.
Wherein, I---top electrode, II---dioxide composite silicon layer, III---silicon substrate, IV---hearth electrode, 1---thermal oxide layer, 2---illuvium.
The specific embodiment
Below in conjunction with accompanying drawing, by embodiment, the present invention is described in further detail:
As Fig. 1, the dose of radiation detector of the MOS structure that the present embodiment is prepared is divided into four material layers, and the superiors are top electrode I, is down dioxide composite silicon layer II successively, silicon substrate III, and the bottom is hearth electrode IV.Dioxide composite silicon layer II is divided into again thermal oxide layer 1 and illuvium 2.
The dose of radiation detector of above-mentioned MOS structure is prepared according to following method:
1) get monocrystalline silicon piece a slice (two throwing silicon chips, 400 μ m, N-type doping, 100 crystal orientation) as silicon substrate III, at silicon substrate III, carry out photoetching, etching formation silicon pillar construction, i.e. patterned silicon substrate III.
Wherein the process of etching is divided into two steps:
(a) use reactive ion etching (RIE) anisotropic etching 2 μ m, see Fig. 2 (a);
(b) use dark silicon etching (ASE) etching 18 μ m, see Fig. 2 (b).
2) patterned silicon substrate III carries out thermal oxide (1000 ℃), and the thickness of the thermal oxide layer 1 of formation is 1 μ m, sees Fig. 3.
3), by LPCVD deposit silica, the thickness that forms illuvium 2 is 2 μ m, sees Fig. 4.Use afterwards RIE and buffered hydrofluoric acid (BHF) to remove back side silicon dioxide layer, see Fig. 5.
4) to upper and lower surface difference splash-proofing sputtering metal aluminium, form respectively top electrode I and hearth electrode IV, thickness is respectively 1 μ m, sees Fig. 1.
The dose of radiation detector of the MOS structure of final preparation, as shown in Figure 1.
Device adopts TSC method to measure.Give device-1V bias voltage, top electrode with respect to hearth electrode is-1V.Device is placed in baking oven, with the programming rate of approximately 2.55 ℃/min, from approximately 25 ℃, is heated to 110 ℃.By HP4156 semiconductor analysis instrument, monitor by the electric current of device, formation temperature-current relationship.As shown in Figure 6, MOS dose of radiation detector of the present invention records the about 450nA of peak point current, than existing MOS dose of radiation detector, conventionally at the electric current of 10pA left and right, improves a lot.
The present embodiment provides a kind of dose of radiation detector of MOS structure, and the present invention is not only confined to this embodiment, can make corresponding modification with designing requirement according to actual needs.
In the present embodiment, the thickness of silicon substrate III, doping content all can regulate for realizing higher sensitivity.
In the present embodiment step 1), etching process and etching depth can regulate according to equipment concrete condition and oxidated layer thickness demand.
The present embodiment step 2) the thermal oxide layer thickness in can regulate according to equipment concrete condition.
In the present embodiment step 3), the method for deposit silica is not limited to LPCVD, can be also other the deposition process that can realize good filling.
In the present embodiment, the aluminum metal layer of upper and lower surface sputter can change and do other metal good conductor, as gold.And can use additive method to prepare metal electrode, as evaporation.
By embodiment, describe above the dose of radiation detector of MOS structure provided by the present invention in detail, it will be understood by those of skill in the art that within not departing from the scope of essence of the present invention, can make certain distortion or modification to the present invention; Its preparation method is also not limited to disclosed content in embodiment.
Claims (10)
1. a dose of radiation detector for MOS structure, comprises top electrode from top to bottom successively, combined oxidation layer, and substrate and hearth electrode, described combined oxidation layer comprises again thermal oxide layer and illuvium.
2. dose of radiation detector as claimed in claim 1, is characterized in that, described thermal oxide layer is formed through thermal oxide by patterned substrate.
3. dose of radiation detector as claimed in claim 2, is characterized in that, described patterned substrate is column or network structure.
4. dose of radiation detector as claimed in claim 1, is characterized in that, described illuvium consists of identical oxide with thermal oxide layer.
5. dose of radiation detector as claimed in claim 1, is characterized in that, described substrate comprises silicon substrate, and described combined oxidation layer comprises dioxide composite silicon layer.
6. dose of radiation detector as claimed in claim 1, is characterized in that, described top electrode and hearth electrode are metal electrode, and described metal comprises aluminium and gold.
7. a preparation method for the dose of radiation detector of MOS structure, comprises the steps:
1) substrate graph;
2) patterned substrate is carried out to thermal oxide, form thermal oxide layer;
3) carry out oxide filling, make oxide be full of above-mentioned thermal oxide layer gap, generate illuvium;
4) on illuvium He under substrate, prepare respectively metal electrode, form top electrode and hearth electrode.
8. the preparation method of dose of radiation detector as claimed in claim 7, is characterized in that, described in step 1), substrate comprises silicon substrate; Metal electrode described in step 4) comprises aluminium electrode and gold electrode, and the method for preparing described metal electrode comprises sputter, evaporation and plating.
9. the preparation method of dose of radiation detector as claimed in claim 8, is characterized in that step 2) in, described thermal oxide layer comprises silica column or the network structure by patterned silicon substrate thermal oxide one-tenth.
10. the preparation method of dose of radiation detector as claimed in claim 7, is characterized in that, in step 3), described oxide is identical with the product of patterned substrate thermal oxide; The method of fill oxide comprises CVD method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110335939A (en) * | 2018-05-17 | 2019-10-15 | 大连理工大学 | It is fluorinated the Semiconductor Magnetic Field Sensors of potential barrier of heterogenous junction layer |
| CN112366246A (en) * | 2020-11-09 | 2021-02-12 | 电子科技大学 | Radiation particle detector device structure |
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| CN1040363C (en) * | 1993-10-28 | 1998-10-21 | 拉多斯技术公司 | Radiation detector |
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| US20090184251A1 (en) * | 2008-01-22 | 2009-07-23 | Karim Karim S | Method and apparatus for a radiation detector |
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Patent Citations (6)
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| CN1040363C (en) * | 1993-10-28 | 1998-10-21 | 拉多斯技术公司 | Radiation detector |
| JP2004342995A (en) * | 2003-05-19 | 2004-12-02 | Kobe Steel Ltd | Semiconductor radiation detector |
| US20090184251A1 (en) * | 2008-01-22 | 2009-07-23 | Karim Karim S | Method and apparatus for a radiation detector |
| CN101872023A (en) * | 2009-04-22 | 2010-10-27 | 中国科学院微电子研究所 | PMOS dosimeter adopting annular grid structure |
| CN102623339A (en) * | 2011-01-26 | 2012-08-01 | 上海华虹Nec电子有限公司 | Method for improving thickness uniformity of intermediate oxide layer of double-layer grid MOS structure |
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| 刘荣林: "PMOS辐照检测传感器的研究", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110335939A (en) * | 2018-05-17 | 2019-10-15 | 大连理工大学 | It is fluorinated the Semiconductor Magnetic Field Sensors of potential barrier of heterogenous junction layer |
| CN110335939B (en) * | 2018-05-17 | 2021-05-04 | 大连理工大学 | Semiconductor magnetic field sensor with fluorinated heterojunction barrier layer |
| CN112366246A (en) * | 2020-11-09 | 2021-02-12 | 电子科技大学 | Radiation particle detector device structure |
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