CN103513522B - Semiconductor cleaning combination - Google Patents
Semiconductor cleaning combination Download PDFInfo
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- CN103513522B CN103513522B CN201310439776.9A CN201310439776A CN103513522B CN 103513522 B CN103513522 B CN 103513522B CN 201310439776 A CN201310439776 A CN 201310439776A CN 103513522 B CN103513522 B CN 103513522B
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- ether
- list phenyl
- cleaning combination
- cleaning
- hydroxide
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- 238000004140 cleaning Methods 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 title description 20
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000203 mixture Substances 0.000 claims abstract description 13
- -1 alkyl diol aryl ether Chemical class 0.000 claims abstract description 12
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 12
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 12
- 239000000243 solution Substances 0.000 claims abstract description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims abstract description 10
- 239000012062 aqueous buffer Substances 0.000 claims abstract description 10
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 8
- 239000003292 glue Substances 0.000 claims abstract description 6
- 239000003112 inhibitor Substances 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical group CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 48
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims description 38
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 25
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 17
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 17
- VTLLEYMBCVXROX-UHFFFAOYSA-N 1-(3-phenylprop-2-enyl)-4,5-dihydroimidazole Chemical compound C(C=CC1=CC=CC=C1)N1C=NCC1 VTLLEYMBCVXROX-UHFFFAOYSA-N 0.000 claims description 15
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 claims description 14
- 238000010792 warming Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 8
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 6
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 6
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 claims description 5
- MYTVHIVXHFJDBV-UHFFFAOYSA-N 5-dodecyl-2-methyl-3H-1,2-oxazole Chemical compound CN1OC(=CC1)CCCCCCCCCCCC MYTVHIVXHFJDBV-UHFFFAOYSA-N 0.000 claims description 5
- 150000001408 amides Chemical class 0.000 claims description 5
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 150000004040 pyrrolidinones Chemical class 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 150000003457 sulfones Chemical class 0.000 claims description 5
- 150000003462 sulfoxides Chemical class 0.000 claims description 5
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical class NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 4
- 241000238370 Sepia Species 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 4
- 235000013985 cinnamic acid Nutrition 0.000 claims description 4
- WBYWAXJHAXSJNI-UHFFFAOYSA-N cinnamic acid group Chemical class C(C=CC1=CC=CC=C1)(=O)O WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 claims description 4
- 238000006210 cyclodehydration reaction Methods 0.000 claims description 4
- 230000018044 dehydration Effects 0.000 claims description 4
- 238000006297 dehydration reaction Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 150000003613 toluenes Chemical class 0.000 claims description 4
- 238000001291 vacuum drying Methods 0.000 claims description 4
- ARNKHYQYAZLEEP-UHFFFAOYSA-N 1-naphthalen-1-yloxynaphthalene Chemical compound C1=CC=C2C(OC=3C4=CC=CC=C4C=CC=3)=CC=CC2=C1 ARNKHYQYAZLEEP-UHFFFAOYSA-N 0.000 claims description 3
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 claims description 3
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 3
- 229940051250 hexylene glycol Drugs 0.000 claims description 3
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 2
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 150000002460 imidazoles Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 230000007797 corrosion Effects 0.000 abstract description 11
- 238000005260 corrosion Methods 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 239000004411 aluminium Substances 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 150000002739 metals Chemical class 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 32
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 239000012459 cleaning agent Substances 0.000 description 13
- 235000015165 citric acid Nutrition 0.000 description 10
- 239000000126 substance Substances 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical class CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 4
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical group CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 4
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 4
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- NYCCIHSMVNRABA-UHFFFAOYSA-N 1,3-diethylimidazolidin-2-one Chemical class CCN1CCN(CC)C1=O NYCCIHSMVNRABA-UHFFFAOYSA-N 0.000 description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 2
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- WMDZKDKPYCNCDZ-UHFFFAOYSA-N 2-(2-butoxypropoxy)propan-1-ol Chemical compound CCCCOC(C)COC(C)CO WMDZKDKPYCNCDZ-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- 150000008625 2-imidazolidinones Chemical class 0.000 description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 150000007529 inorganic bases Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 244000248349 Citrus limon Species 0.000 description 1
- 235000005979 Citrus limon Nutrition 0.000 description 1
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical class CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- NWEKXBVHVALDOL-UHFFFAOYSA-N butylazanium;hydroxide Chemical compound [OH-].CCCC[NH3+] NWEKXBVHVALDOL-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- SYECJBOWSGTPLU-UHFFFAOYSA-N hexane-1,1-diamine Chemical compound CCCCCC(N)N SYECJBOWSGTPLU-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000011176 pooling Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
The present invention provides a kind of for removing the cleaning combination of photoetching glue residue, it is characterised in that：Including little molecules in inhibiting agent composition, solvent, quaternary ammonium hydroxide, citric acid/citrate aqueous buffer solution, alkyl diol aryl ether.The cleaning combination reduces the corrosion to chip figure and to non-metallic substrates such as the metals such as aluminium and copper and silica, and especially its micromolecular inhibitor contained goes out good inhibitory action to the Corrosion behavior of metallic aluminium.
Description
Technical field
The present invention relates to semi-conductor industry technical field more particularly to one kind for the photoresists such as removal in semi-conductor industry
The cleaning combination of residue.
Background technology
In common semiconductor fabrication process, by the surfaces such as metals and low-k materials such as silica, Cu (copper)
The mask of photoresist is formed, pattern transfer is carried out using wet method or dry etching after exposure.The quick cleaning of low temperature is half
The important directions of conductor wafer fabrication process development.The negative photoresist of 20 μm or more thickness is just gradually applied to semiconductor wafer
In manufacturing process, and industrial most photoetching gluing cleaning agent is preferable to the cleaning ability of positive photoresist at present, but cannot
The thoroughly negative photoresist with cross-linked structure on removal chip after exposed and etching.In addition, in semiconductor wafer
In the Process of Chemical Cleaning for carrying out photoresist, cleaning agent can often cause the corrosion of wafer pattern and base material.Particularly in utilizationization
Learn during cleaning agent removes photoresist and etch residue, metal (especially aluminium and copper etc. are compared with active metal) corrosion be compared with
For it is universal and very serious the problem of, often lead to significantly reducing for wafer yield..
At present, photoetching gluing cleaning agent is mainly made of polar organic solvent, highly basic and/or water etc., by by semiconductor die
Piece immerses in cleaning agent or rinses semiconductor wafer using cleaning agent, removes the photoresist of semiconductor die on piece.
Patent document WO03104901 utilizes tetramethylammonium hydroxide (TMAH), sulfolane (SFL), water and trans- 1,2- rings
Hexane diamine tetraacethyl (CyDTA) etc. forms alkaline cleaner, and chip is immersed in the cleaning agent, 20 are submerged at 50~70 DEG C
~30min removes the photoresist in metal and dielectric substrate.The alkaline cleaner omits the corrosion of semiconductor wafer substrate
Height, and the photoresist of semiconductor wafer cannot be removed completely, cleaning ability deficiency.
WO04059700 utilizes tetramethylammonium hydroxide (TMAH), N- methylmorpholine-N- oxides (MO), water and 2- mercaptos
Base benzimidazole (MBI) etc. forms alkaline cleaner, and chip is immersed in the cleaning agent, and 15~60min is submerged at 70 DEG C, is removed
Remove the photoresist on metal and dielectric substrate.The cleaning temperature of the alkaline cleaner is higher, the corruption to semiconductor wafer substrate
Lose slightly higher, and cleaning speed is relatively slow, is unfavorable for improving the cleaning efficiency of semiconductor wafer.
JP1998239865 utilizes TMAH, dimethyl sulfoxide (DMSO) (DMSO), 1,3 '-dimethyl -2- imidazolidinones (DMI) and water
Deng composition alkaline cleaner, chip is immersed in the cleaning agent, 20 on metal and dielectric substrate are removed at 50~100 DEG C
μm or more thick film photolithography glue.The alkaline cleaner is tighter to the corrosion of semiconductor wafer substrate under higher cleaning temperature
Weight.
JP2001215736 forms alkaline cleaner using TMAH, dimethyl sulfoxide (DMSO) (DMSO), ethylene glycol (EG) and water etc.,
Chip is immersed in the cleaning agent, the photoresist in metal and dielectric substrate is removed at 50~70 DEG C.The alkaline cleaner
It is more serious to the corrosion of semiconductor wafer substrate under higher cleaning temperature.
JP2001215736 forms alkaline cleaner using TMAH, dimethyl sulfoxide (DMSO) (DMSO), ethylene glycol (EG) and water etc.,
Chip is immersed in the cleaning agent, the photoresist in metal and dielectric substrate is removed at 50~70 DEG C.The alkaline cleaner
It is more serious to the corrosion of semiconductor wafer substrate under higher cleaning temperature.
Either cleaning ability is insufficient or semiconductor wafer substrate is corroded stronger for more than cleaning agent, it is impossible to meet industry
It needs.
The content of the invention
The purpose of the present invention is to solve photoetching gluing cleaning agent of the prior art to the cleaning ability deficiency of photoresist
With the stronger problem of corrosivity to semiconductor wafer substrate, provide a kind of with higher photoresist cleaning ability and relatively low
The corrosive photoresist cleaning combination of base material.
In order to solve the above technical problems, the present invention provides a kind of for removing the cleaning group of plasma etching residue
Object is closed, including little molecules in inhibiting agent composition, solvent, quaternary ammonium hydroxide, citric acid/citrate aqueous buffer solution, alkane
Base glycol aryl ether.
Wherein, content of the citric acid/citrate aqueous buffer solution in cleaning combination is preferably quality hundred
Divide ratio 10%~50%, the content of the micromolecular inhibitor is preferably 0.5%~15%, and the content of the solvent is preferably
30%~60%, the content of the quaternary ammonium hydroxide is preferably that 0.1~15%, content of the alkyl diol aryl ether is preferred
For 1~15%.
Wherein, the little molecules in inhibiting agent composition is cinnamyl imidazoline and 2- methyl -5- dodecyl isoxazole structures
Into mixture.
Wherein, the cinnamyl imidazoline and 2- methyl -5- dodecyl isoxazole mixing qualities ratio are 1:1.2~1.5.
Wherein, the preparation method of the cinnamyl imidazoline is specially：
The analytically pure diethylenetriamines of 10ml are placed in four-hole boiling flask, are warming up to 150 DEG C, instill 3ml analysis pure toluenes,
Add the analytically pure cinnamic acids of 22g, be stirred in a nitrogen environment, then be warming up to 170 DEG C and start acylated dehydration, reaction 5h with
Afterwards, 240 DEG C of beginning cyclodehydration 3h are warming up to, drying in vacuum drying chamber is placed it in after completion of the reaction, obtains sepia and glue
The cinnamyl imidazoline of thick shape, reaction equation are as follows：
Wherein, the solvent may be selected from sulfoxide, sulfone, imidazolidinone, pyrrolidones, imidazolone, amide and ether
It is one or more.Wherein, the sulfoxide is preferably diethyl sulfoxide or first ethyl-sulfoxide；The sulfone is preferably methyl
Sulfone, ethyl sulfone or sulfolane；The imidazolidinone is preferably 2- imidazolidinones, 1,3- dimethyl -2- imidazolidinones or 1,
3- diethyl -2- imidazolidinones；The pyrrolidones is preferably N-Methyl pyrrolidone；The imidazolone is preferable
For 1,3-Dimethyl-2-imidazolidinone (DMI)；The amide is preferably dimethylformamide；The ether is preferably
Glycol monoethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol
Monobutyl ether, propylene glycol monomethyl ether, dihydroxypropane single-ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether or
Dipropylene glycol mono-n-butyl Ether.
Wherein, the quaternary ammonium hydroxide is preferably tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl hydrogen-oxygen
Change ammonium, tetrabutylammonium hydroxide or benzyltrimethylammonium hydroxide, more preferably tetramethylammonium hydroxide, tetraethyl ammonium hydroxide
Or tetrabutylammonium hydroxide, it is most preferably tetramethylammonium hydroxide.
Wherein, the alkyl diol aryl ether is preferably propylene glycol list phenyl ether, Isopropanediol list phenyl ether, diethyl two
Alcohol list phenyl ether, dipropylene glycol list phenyl ether, di-isopropylene glycol list phenyl ether, triethylene glycol list phenyl ether, tripropylene glycol list benzene
Base ether, three Isopropanediol list phenyl ethers, six condensed ethandiol list phenyl ethers, six contracting propylene glycol list phenyl ethers, six contracting Isopropanediol lists
Phenyl ether, propylene glycol single-benzyl ether, Isopropanediol single-benzyl ether or hexylene glycol list naphthyl ether, more preferably propylene glycol list phenyl
Ether, dipropylene glycol list phenyl ether or propylene glycol single-benzyl ether.
The present invention also provides the preparation methods of above-mentioned cleaning combination, and above-mentioned each component is mixed in proportion, and stirring is equal
It is even to get.
Beneficial effects of the present invention:
The cleaning combination of the present invention can room temperature at 85 DEG C relatively quickly cleaning remove metal, metal alloy or
Etch residue in dielectric substrate after plasma etching, especially photoresist etch residues；Meanwhile contained alkane
Base glycol aryl ether and micromolecular inhibitor can form layer protecting film in chip figure and substrate surface, prevent halogen former
The attack to chip figure and base material such as son, hydroxide ion, so as to reduce to chip figure and to metals such as aluminium and copper and
The corrosion of the non-metallic substrates such as silica, especially its micromolecular inhibitor contained go out well the Corrosion behavior of metallic aluminium
Inhibitory action.The cleaning combination of the present invention has a good application prospect in field of microelectronics such as cleaning semiconductor chips.
Specific embodiment
The present invention provides a kind of for removing the cleaning combination of plasma etching residue, press down including small molecule
Preparation mixture, solvent, quaternary ammonium hydroxide, citric acid/citrate aqueous buffer solution, alkyl diol aryl ether.
Further preferably, the cleaning combination is only made of said components.
Content of the citric acid/citrate aqueous buffer solution in cleaning combination is preferably mass percent
10%~50%, further preferably 30%.
The ratio of the citric acid and citrate can carry out in any proportion as needed, but must make the final cleaning of gained
It is preferably the salt that citric acid is formed with inorganic base or quaternary ammonium hydroxide that composition, which can keep homogeneous, described citrate,；
Wherein, inorganic base such as ammonium hydroxide and potassium hydroxide etc., quaternary ammonium hydroxide such as tetramethylammonium hydroxide and tetraethyl ammonium hydroxide etc..
Multi-functional citric acid/citrate aqueous buffer solution not only has pooling feature, also with stronger sequestering power and clearly
Wash the ability of inorganic residue.
Content of the little molecules in inhibiting agent composition in cleaning combination is preferably 0.5%~15%, further preferably
For 10%.
Wherein, the little molecules in inhibiting agent composition is cinnamyl imidazoline and 2- methyl -5- dodecyl isoxazole structures
Into mixture, the cinnamyl imidazoline and 2- methyl -5- dodecyl isoxazole mixing qualities ratio are 1:1.2~1.5.
Wherein, the preparation method of the cinnamyl imidazoline is specially：
The analytically pure diethylenetriamines of 10ml are placed in four-hole boiling flask, are warming up to 150 DEG C, instill 3ml analysis pure toluenes,
Add the analytically pure cinnamic acids of 22g, be stirred in a nitrogen environment, then be warming up to 170 DEG C and start acylated dehydration, reaction 5h with
Afterwards, 240 DEG C of beginning cyclodehydration 3h are warming up to, drying in vacuum drying chamber is placed it in after completion of the reaction, obtains sepia and glue
The cinnamyl imidazoline of thick shape, reaction equation are as follows：
The mass percent of the solvent is preferably mass percent 30%~60%, and further preferably 40%.
In the present invention, the solvent may be selected from sulfoxide, sulfone, imidazolidinone, pyrrolidones, imidazolone, amide and ether
In one or more.Wherein, the sulfoxide is preferably diethyl sulfoxide or first ethyl-sulfoxide；The sulfone is preferably
Methyl sulfone, ethyl sulfone or sulfolane；The imidazolidinone is preferably 2- imidazolidinones, 1,3- dimethyl -2- imidazolidinones
Or 1,3- diethyl -2- imidazolidinones；The pyrrolidones is preferably N-Methyl pyrrolidone；The imidazolone compared with
Good is 1,3-Dimethyl-2-imidazolidinone (DMI)；The amide is preferably dimethylformamide；The ether is preferable
It is glycol monoethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethyl
Glycol monobutyl ether, propylene glycol monomethyl ether, dihydroxypropane single-ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol list second
Ether or Dipropylene glycol mono-n-butyl Ether.
The quaternary ammonium hydroxide be preferably tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropylammonium hydroxide,
Tetrabutylammonium hydroxide or benzyltrimethylammonium hydroxide, more preferably tetramethylammonium hydroxide, tetraethyl ammonium hydroxide or four
Butyl ammonium hydroxide is most preferably tetramethylammonium hydroxide.The content of the quaternary ammonium hydroxide is preferably mass percent
0.1~15%, it is most preferably mass percent 10%.
The alkyl diol aryl ether is preferably propylene glycol list phenyl ether, Isopropanediol list phenyl ether, diethylene glycol list
Phenyl ether, dipropylene glycol list phenyl ether, di-isopropylene glycol list phenyl ether, triethylene glycol list phenyl ether, tripropylene glycol list phenyl ether,
Three Isopropanediol list phenyl ethers, six condensed ethandiol list phenyl ethers, six contracting propylene glycol list phenyl ethers, six contracting Isopropanediol list phenyl
Ether, propylene glycol single-benzyl ether, Isopropanediol single-benzyl ether or hexylene glycol list naphthyl ether, more preferably propylene glycol list phenyl ether, two
Propylene glycol list phenyl ether or propylene glycol single-benzyl ether.The content of the alkyl diol aryl ether is preferably mass percent 1
~15%, more preferably mass percent 10%
Further, surfactant, the content of the surfactant can also be included in the cleaning combination
Preferably mass percent 0~5%, more preferably mass percent 0.05~3%.
The surfactant is preferably polyvinyl alcohol (PVG), polyvinylpyrrolidone (PVP) or polyoxyethylene ether
(POE).The molecular weight of the surfactant is preferably 500~20000, and more preferably 1000~10000.
The present invention also provides the preparation methods of above-mentioned cleaning combination, and above-mentioned each component is mixed in proportion, and stirring is equal
It is even to get.
The present invention will be described in detail below with reference to the drawings of preferred embodiments, whereby to the present invention how application technology means
Technical problem is solved, and the realization process for reaching technique effect can fully understand and implement according to this.
The preparation of 1 cinnamyl imidazoline of embodiment
The analytically pure diethylenetriamines of 10ml are placed in four-hole boiling flask, are warming up to 150 DEG C, instill 3ml analysis pure toluenes,
Add the analytically pure cinnamic acids of 22g, be stirred in a nitrogen environment, then be warming up to 170 DEG C and start acylated dehydration, reaction 5h with
Afterwards, 240 DEG C of beginning cyclodehydration 3h are warming up to, drying in vacuum drying chamber is placed it in after completion of the reaction, obtains sepia and glue
The cinnamyl imidazoline of thick shape.
The preparation of 2 cleaning combination 1 of embodiment
Cinnamyl imidazoline, 6g2- methyl -5- dodecyls isoxazole, the 40gN- crassitudes of the preparation of 4g embodiments 1
Ketone, 10g tetramethylammonium hydroxide, the 30g citric acids/ammonium citrate aqueous buffer solution (mass content of citric acid and ammonium citrate
Than for 10：1), 10g propylene glycol list phenyl ether mixes, and stirs evenly to get cleaning combination 1.
Comparative example compares cleaning combination
40gN- methyl pyrrolidones, 10g tetramethylammonium hydroxide, 30g citric acids/ammonium citrate aqueous buffer solution (lemon
The mass content ratio of acid and ammonium citrate is 10:1), 10g propylene glycol list phenyl ether mixes, and stirs evenly to compare cleaning group
Close object.
Experiment 1
The cleaning of foreign organic matter (fingerprint, remover waste liquid) is tested
On the glass cleaned with ultra-pure water, after arbitrarily pressing fingerprint formation foreign organic matter (fingerprint), by it upper
It states and is impregnated in the chemical cleaning composite of embodiment and comparative example 5 minutes, afterwards with optical electron microscope (LEICA commercial firms, type
Number：FTM-200 table 1 is the results are shown in after) measuring.
In addition, on the glass cleaned with ultra-pure water, after being stained with remover waste liquid, with temperature of the heater at 90 DEG C
Lower 5 hours of drying will impregnate after five minutes in the chemical cleaning composite of above-described embodiment and comparative example, afterwards with optics electricity
Sub- microscope (LEICA commercial firms, model：FTM-200) it is measured, the results are shown in table 1 afterwards.
Experiment 2
The cleaning of inorganic foreign matter is tested
On the glass cleaned with ultra-pure water, arbitrarily it is stained with after dust forms inorganic foreign matter (dust), in above-mentioned reality
It applies and is impregnated in the chemical cleaning composite of example and comparative example 5 minutes, afterwards with optical electron microscope (LEICA commercial firms, model：
FTM-200) after measurement result, represented in table 1.
Observe the damage of metallic diaphragm
At room temperature, the single aluminum substrate (momo-aluminiumsubstrate) that will be cleaned with ultra-pure water, above-mentioned
It is impregnated 30 minutes in the chemical cleaning composite of embodiment and comparative example, above-mentioned test piece with ultra-pure water is cleaned afterwards, uses nitrogen
After gas drying, whether corroded in flying-spot microscope (SEM) check pattern, and the results are shown in table 1.
Table 1
| Fingerprint | Dust | Remover waste liquid | Metal film | |
| Embodiment 2 | Well | Well | Well | Well |
| Comparative example | Well | Well | Well | It is bad |
In table 1, the good revolution mark for representing foreign matter is no more than the 2% of test piece area, and bad expression revolution mark is more than
More than 50%.
The chemical cleaning composite according to the present invention for being used to clean resist remover, has excellent cleaning ability
And can prevent the corrosion of metal film, and there is no the problem of incendivity, storage characteristics and environment etc., and it is alternative with
Toward the alcohols chemical substance such as isopropanol used in cleaning, the removal for organic and inorganic foreign matter has brilliance
Effect.
All above-mentioned this intellectual properties of primarily implementation, there is no this new products of implementation of setting limitation other forms
And/or new method.Those skilled in the art will utilize this important information, the above modification, to realize similar execution feelings
Condition.But all modifications or transformation belong to the right of reservation based on new product of the present invention.
The above described is only a preferred embodiment of the present invention, being not that the invention has other forms of limitations, appoint
What those skilled in the art changed or be modified as possibly also with the technology contents of the disclosure above equivalent variations etc.
Imitate embodiment.But it is every without departing from technical solution of the present invention content, technical spirit according to the invention is to above example institute
Any simple modification, equivalent variations and the remodeling made still fall within the protection domain of technical solution of the present invention.
Claims (6)
1. a kind of cleaning combination for being used to remove photoetching glue residue, it is characterised in that：By little molecules in inhibiting agent composition, molten
Agent, quaternary ammonium hydroxide, citric acid/citrate aqueous buffer solution, alkyl diol aryl ether composition；
Content of the citric acid/citrate aqueous buffer solution in cleaning combination for mass percent 30%~
50%, the content of the micromolecular inhibitor is 0.5%~15%, and the content of the solvent is 30%~60%, the quaternary ammonium
The content of hydroxide is 0.1~15%, the content of the alkyl diol aryl ether is 1~15%；
The little molecules in inhibiting agent composition is the mixing that cinnamyl imidazoline and 2- methyl -5- dodecyls isoxazole are formed
Object；
The cinnamyl imidazoline and 2- methyl -5- dodecyl isoxazole mixing qualities ratio are 1:1.2~1.5.
2. cleaning combination as described in claim 1, it is characterised in that：The preparation method of the cinnamyl imidazoline is specific
For,
The analytically pure diethylenetriamines of 10ml are placed in four-hole boiling flask, are warming up to 150 DEG C, instill 3ml analysis pure toluenes, addition
The analytically pure cinnamic acids of 22g, are stirred in a nitrogen environment, then are warming up to 170 DEG C and start acylated dehydration, after reacting 5h,
240 DEG C of beginning cyclodehydration 3h are warming up to, drying in vacuum drying chamber is placed it in after completion of the reaction, it is thick to obtain sepia
Cinnamyl imidazoline, reaction equation is as follows：
3. cleaning combination as claimed in claim 1 or 2, it is characterised in that：The solvent may be selected from sulfoxide, sulfone, imidazoles
One or more in alkanone, pyrrolidones, imidazolone, amide and ether.
4. cleaning combination as claimed in claim 1 or 2, it is characterised in that：The quaternary ammonium hydroxide is tetramethyl hydrogen
Amine-oxides, tetraethyl ammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide or benzyltrimethylammonium hydroxide.
5. cleaning combination as claimed in claim 1 or 2, it is characterised in that：The alkyl diol aryl ether is propylene glycol
Single phenyl ether, Isopropanediol list phenyl ether, diethylene glycol list phenyl ether, dipropylene glycol list phenyl ether, di-isopropylene glycol list phenyl
Ether, triethylene glycol list phenyl ether, tripropylene glycol list phenyl ether, three Isopropanediol list phenyl ethers, six condensed ethandiol list phenyl ethers, six
Contracting propylene glycol list phenyl ether, six contracting Isopropanediol list phenyl ethers, propylene glycol single-benzyl ether, Isopropanediol single-benzyl ether or hexylene glycol
Single naphthyl ether.
6. the preparation method of the cleaning combination of claim 1 or 2, it is characterised in that：Above-mentioned each component is mixed in proportion,
Stir evenly to get.
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| 异恶唑衍生物缓蚀剂缓蚀性能的理论评价;吴刚等;《中国腐蚀与防护学报》;20121231;第32卷(第6期);513-519 * |
| 新型肉桂基咪唑啉缓蚀剂的合成及其对盐酸介质中Q235钢的缓蚀性能;李言涛等;《材料保护》;20111130;第44卷(第11期);29-33 * |
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