CN103513163A - Moisture detection device and moisture detection method - Google Patents
Moisture detection device and moisture detection method Download PDFInfo
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- CN103513163A CN103513163A CN201210206555.2A CN201210206555A CN103513163A CN 103513163 A CN103513163 A CN 103513163A CN 201210206555 A CN201210206555 A CN 201210206555A CN 103513163 A CN103513163 A CN 103513163A
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Abstract
The invention discloses a moisture detection device and a moisture detection method. A to-be-detected structure is influenced by moisture of a wet pool structure, a standard structure identical to the to-be-detected structure is isolated so that the standard structure is not influenced by moisture, and then the influence of moisture to the reliability of a semiconductor device can be obtained specifically by comparing electrical parameters of the standard structure and the to-be-detected structure. The moisture detection device and the moisture detection method have high sensitivity and high reliability and are conducive to optimization of the prior production process.
Description
Technical field
The present invention relates to integrated circuit and manufacture field, particularly a kind of steam detection means and apply the steam detection method of this steam detection means.
Background technology
The fast development of integrated circuit, has brought huge challenge to reliability testing.Integrated circuit worker will further further investigate Reliability Physics and failure mechanism, strengthens reliability engineering related work, the restriction of integrated circuit characteristic dimension further being dwindled to reduce reliability, and guarantee that product keeps enough reliability tolerance limits.
The size of complementary metal oxide semiconductor (CMOS) (CMOS) reaches 45nm node and following, metal interconnected the delay of device speed (RC effect) be can not be ignored all the more, in order to address this problem, super low K dielectric layer (ultra low-k dielectric) is introduced in the last part technology (BEOL) of CMOS production, the RC effect as interlayer dielectric layer with minimizing device.
Yet the introducing of new material has caused new integrity problem.Because machinery, electricity and the thermal property of super low K dielectric layer is well below traditional earth silicon material, (moisture uptake) is more remarkable for its hydroscopicity.
Conventionally, when steam (moisture) content is higher, semiconductor devices there is is the harm of following two aspects: one, electrical property is unstable.When temperature is lower, easily cause the leakage current of product to increase, the situation that very possible appearance is scrapped by the gross.Two, affect metal interconnecting wires.Such as moisture content can cause corrosion to metal when higher, cause open circuit; In the situation that having pollutant, also easily form electrolytic solution, thereby make multiple layer metal all receive corrosion.
Thereby in existing technique, also do not form and a kind ofly compared with effective method, come sensitive this problem of detection to improve processing procedure process.
Summary of the invention
The object of the present invention is to provide a kind of steam detection means and apply the steam detection method of this steam detection means, to solve existing technique, can not characterize accurately the problem of steam on the impact of reliability.
For solving the problems of the technologies described above, the invention provides a kind of steam detection means, the impact for detection of steam on device reliability, comprising:
One wet pool structure, in order to provide steam;
One treats geodesic structure, the steam providing in order to receive described wet pool structure; And
One normal structure, this normal structure with described in treat that geodesic structure is identical, and isolated with described wet pool structure.
Further, for described steam detection means, described in treat that geodesic structure and normal structure are respectively in described wet pool structure both sides.
Further, for described steam detection means, also comprise a vacant structure, described vacant structure is between described normal structure and wet pool structure, for isolating described normal structure and wet pool structure.
Further, for described steam detection means, described vacant structure is metal filled region.
Further, for described steam detection means, described wet pool structure comprises a ultralow K dielectric area and a sealing ring around described ultralow K dielectric area.
Further, for described steam detection means, described sealing ring has opening, and described opening exposes described ultralow K dielectric area, and described opening near described in treat geodesic structure.
Further, for described steam detection means, described in treat that geodesic structure, normal structure, vacant structure and wet pool structure are rectangle.
Further, for described steam detection means, length and the width of described rectangle are all 5um ~ 1000um.
Further, for described steam detection means, length and the width of described rectangle are all 50um ~ 100um.
Further, for described steam detection means, described in treat that geodesic structure and normal structure are all capacitance structure.
The invention provides a kind of steam detection method based on above-mentioned steam detection means, comprising:
The electrical parameter of geodesic structure and normal structure is treated in measurement;
The electrical parameter for the treatment of geodesic structure and normal structure recording is compared, to judge that steam treats the impact of geodesic structure.
Further, for described steam detection method, described electrical parameter comprises: electric capacity, voltage breakdown, time breakdown and leakage current.
Further, for described steam detection method, if described in treat geodesic structure and normal structure electric capacity differ and be less than 3%, show that steam treats the impact of geodesic structure and can accept.
Further, for described steam detection method, if described in treat geodesic structure and normal structure voltage breakdown differ and be less than 2V, show that steam treats the impact of geodesic structure and can accept.
Further, for described steam detection method, if described in treat geodesic structure and normal structure time breakdown differ and be less than 2 years, show that steam treats the impact of geodesic structure and can accept.
Further, for described steam detection method, if described in treat geodesic structure and normal structure leakage current differ and be less than an order of magnitude, show that steam treats the impact of geodesic structure and can accept.
In steam detection means provided by the invention and steam detection method, treat the wet influence of moisture of pool structure of geodesic structure, and the normal structure identical with treating geodesic structure is isolated, make normal structure not be subject to influence of moisture, afterwards by normal structure with treat that the electrical parameter of geodesic structure compares, can be concrete draw the impact of steam on semiconductor device reliability, there is very high sensitivity and credibility, and be conducive to optimize existing production technology.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the steam detection means of the embodiment of the present invention;
Fig. 2 is the process flow diagram of the steam detection method of the embodiment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, steam detection means provided by the invention and steam detection method are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying, only in order to convenient, the object of the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 1, the schematic diagram of the steam detection means that Fig. 1 is the embodiment of the present invention.It is formed on a wafer, comprising:
One treats geodesic structure 1, a normal structure 2 and a wet pool structure 3, described in treat that geodesic structure 1 and normal structure 2 are respectively in the both sides of described wet pool structure 3, described wet pool structure 3 is near treating that geodesic structure 1 place is formed with an opening 5; One vacant structure 4, described vacant structure 4 is between described normal structure 2 and wet pool structure 3.
Concrete, described in treat that geodesic structure 1, normal structure 2, vacant structure 4 and wet pool structure 3 can be rectangle, its length and width are all 5um ~ 1000um.Preferably, the length of described rectangle and width are all 50um ~ 100um.
Describedly treat that geodesic structure and normal structure are all capacitance structure, it has the attribute that existing technique forms, and does not repeat herein.
In the present embodiment, described vacant structure is metal filled region (dummy metal), and it can be positioned on the Cutting Road of wafer, with the good space that utilizes.
The arrangement mode of above-mentioned steam detection means can be not limited to being in line shown in Fig. 1, can be also to form a line, or folding shape etc., these can the situation of wafer determine in actual production.
Please continue to refer to Fig. 1, described wet pool structure 3 comprises a ultralow K dielectric area 6 and a sealing ring 7 around described ultralow K dielectric area 6, wherein, described in described sealing ring 7 is close, treat that geodesic structure place is formed with an opening 5, thereby expose the described ultralow K dielectric area 6 of part.
Conventionally super low-K dielectric is more significant to the absorption of steam, therefore by ultralow K areas of dielectric 6 use sealing rings 7 carry out around, to form " source " that steam can be provided, 5 of its openings can be by steam Cong“ source " in distribute, and then treated that geodesic structure 1 receives.The region of being blocked by sealing ring 7 can not make steam pass through, while is due to the existence of vacant structure 4, guaranteed that normal structure 2 is not subject to the impact of steam, also just avoided the systematic error brought due to the defect of structure itself in measuring process, there is higher degree of accuracy.
Please refer to Fig. 2, the embodiment of the present invention provides a kind of steam detection method of the steam detection means based on above-mentioned, comprising:
Step S201, measurement is formed at the electrical parameter for the treatment of geodesic structure of the detection architecture of each chip on wafer.Comprise electric capacity (capacitance), voltage breakdown (Breakdown Voltage, VBD), time breakdown (Time Dependant Dielectric Breakdown, TDDB) and leakage current (leakage current).
Step S202, measures the electrical parameter that is formed at the normal structure of the detection architecture of each chip on wafer.Comprise electric capacity, voltage breakdown, time breakdown and leakage current.
Step S203, compares the measured electrical parameter for the treatment of geodesic structure and the electrical parameter of normal structure respectively, calculates the difference for the treatment of the electrical parameter of geodesic structure and the electrical parameter of normal structure.And judge the influence degree to device according to following setting.
Conventionally, described in treat that geodesic structure and the measured electric capacity of normal structure differ and be less than 3%, think effectively, to treat the impact of geodesic structure be acceptable to steam; Otherwise, if measured difference is more than or equal to 3%, illustrate that steam treats that the impact of geodesic structure should arouse attention or must be improved.
Described in steam is decided by the influence degree of voltage breakdown, treat the voltage breakdown of geodesic structure and normal structure differs whether be less than 2V, in the situation that being less than 2V, described in can thinking, treat that geodesic structure still has good reliability; Otherwise reliability is not good, should otherwise processed.
Steam has a larger scope to the impact of time breakdown, as calculated, described in until the time breakdown of geodesic structure and normal structure, differ and be about 2 years or when following, can accept; And outside this scope, will have a greatly reduced quality its serviceable life.
The size of leakage current merits attention equally, as mentioned in background technology, is easy to the situation that appearance is scrapped by the gross when leakage current is larger.Because common leakage current is all less, thus record described in treat geodesic structure and normal structure leakage current differ and be less than an order of magnitude; Exceed an order of magnitude and be easy to make electrically extremely unstable, become " waste product ".
Comprehensive above-mentioned to the described restriction for the treatment of the electrical parameter difference of geodesic structure and normal structure, the reliability of judging device that can be concrete, on the other hand, the technological process of production in conjunction with device, can judge targetedly and in processing procedure, need improved link, thereby revise corresponding technique, enhance productivity.
The embodiment of the present invention provides a kind of wafer that comprises described steam detection means, for analyzing electrical parameter.Described steam detection means is formed on each chip.Concrete, can be for laterally, can be for longitudinally, or tilt; Described steam detection means can be formed on the region of device architecture.
In the steam detection means and steam detection method providing in such scheme, treat the wet influence of moisture of pool structure of geodesic structure, and the normal structure identical with treating geodesic structure is isolated, make normal structure not be subject to influence of moisture, afterwards by normal structure with treat that the electrical parameter of geodesic structure compares, can be concrete draw the impact of steam on semiconductor device reliability, there is very high sensitivity and credibility, and be conducive to optimize existing production technology.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these change and modification.
Claims (16)
1. a steam detection means, the impact for detection of steam on semiconductor device reliability, is characterized in that, comprising:
One wet pool structure, in order to provide steam;
One treats geodesic structure, the steam providing in order to receive described wet pool structure; And
One normal structure, this normal structure with described in treat that geodesic structure is identical, and isolated with described wet pool structure.
2. steam detection means as claimed in claim 1, is characterized in that, described in treat that geodesic structure and normal structure are respectively in described wet pool structure both sides.
3. steam detection means as claimed in claim 2, is characterized in that, also comprises a vacant structure, and described vacant structure is between described normal structure and wet pool structure, for isolating described normal structure and wet pool structure.
4. steam detection means as claimed in claim 3, is characterized in that, described vacant structure is metal filled region.
5. steam detection means as claimed in claim 1, is characterized in that, described wet pool structure comprises a ultralow K dielectric area and a sealing ring around described ultralow K dielectric area.
6. steam detection means as claimed in claim 5, is characterized in that, described sealing ring has opening, and described opening exposes described ultralow K dielectric area, and described opening near described in treat geodesic structure.
7. the steam detection means as described in claim 3 ~ 6 any one, is characterized in that, described in treat that geodesic structure, normal structure, vacant structure and wet pool structure are rectangle.
8. steam detection means as claimed in claim 7, is characterized in that, length and the width of described rectangle are all 5um ~ 1000um.
9. steam detection means as claimed in claim 8, is characterized in that, length and the width of described rectangle are all 50um ~ 100um.
10. steam detection means as claimed in claim 1, is characterized in that, described in treat that geodesic structure and normal structure are all capacitance structure.
The steam detection method of 11. 1 kinds of steam detection means based on described in any one in claim 1 ~ 10, is characterized in that, comprising:
The electrical parameter of geodesic structure and normal structure is treated in measurement;
The electrical parameter for the treatment of geodesic structure and normal structure recording is compared, to judge that steam treats the impact of geodesic structure.
12. steam detection methods as claimed in claim 11, is characterized in that, described electrical parameter comprises: electric capacity, voltage breakdown, time breakdown and leakage current.
13. steam detection methods as claimed in claim 12, is characterized in that, if described in treat geodesic structure and normal structure electric capacity differ and be less than 3%, show that steam treats the impact of geodesic structure and can accept.
14. steam detection methods as claimed in claim 12, is characterized in that, if described in treat geodesic structure and normal structure voltage breakdown differ and be less than 2V, show that steam treats the impact of geodesic structure and can accept.
15. steam detection methods as claimed in claim 12, is characterized in that, if described in treat geodesic structure and normal structure time breakdown differ and be less than 2 years, show that steam treats the impact of geodesic structure and can accept.
16. steam detection methods as claimed in claim 12, is characterized in that, if described in treat geodesic structure and normal structure leakage current differ and be less than an order of magnitude, show that steam treats the impact of geodesic structure and can accept.
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| CN201210206555.2A CN103513163B (en) | 2012-06-20 | 2012-06-20 | Steam detection means and steam detection method |
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| CN201210206555.2A CN103513163B (en) | 2012-06-20 | 2012-06-20 | Steam detection means and steam detection method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989011659A1 (en) * | 1988-05-16 | 1989-11-30 | Leedy Glen J | Novel method of making, testing and test device for integrated circuits |
| CN1773306A (en) * | 2004-11-11 | 2006-05-17 | 英业达股份有限公司 | Apparatus for testing electronic instrument |
| CN200989935Y (en) * | 2006-12-26 | 2007-12-12 | 普诚科技股份有限公司 | Testing system |
| CN102004181A (en) * | 2010-09-17 | 2011-04-06 | 上海北京大学微电子研究院 | Method and system for testing leakage current of light-emitting diode (LED) |
| CN102129020A (en) * | 2010-01-19 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | Aging test device |
-
2012
- 2012-06-20 CN CN201210206555.2A patent/CN103513163B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989011659A1 (en) * | 1988-05-16 | 1989-11-30 | Leedy Glen J | Novel method of making, testing and test device for integrated circuits |
| CN1773306A (en) * | 2004-11-11 | 2006-05-17 | 英业达股份有限公司 | Apparatus for testing electronic instrument |
| CN200989935Y (en) * | 2006-12-26 | 2007-12-12 | 普诚科技股份有限公司 | Testing system |
| CN102129020A (en) * | 2010-01-19 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | Aging test device |
| CN102004181A (en) * | 2010-09-17 | 2011-04-06 | 上海北京大学微电子研究院 | Method and system for testing leakage current of light-emitting diode (LED) |
Non-Patent Citations (1)
| Title |
|---|
| 张秀霞: "半导体器件和集成电路水汽含量控制的研究", 《电子工业专用设备》 * |
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