CN103509661A - Cleanser for semiconductor device packaging - Google Patents
Cleanser for semiconductor device packaging Download PDFInfo
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- CN103509661A CN103509661A CN201210220078.5A CN201210220078A CN103509661A CN 103509661 A CN103509661 A CN 103509661A CN 201210220078 A CN201210220078 A CN 201210220078A CN 103509661 A CN103509661 A CN 103509661A
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- ammonium
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Abstract
The invention discloses a cleanser for semiconductor device packaging, which is prepared from the following raw materials in percentage by mass: 1.0-5% of glacial acetic acid, 0.5-7.5% of ammonium bifluoride, 0.2-7.5% of ammonium fluoride NH4F, 55-70% of dimethylformamide and 25-35% of deionized water. The cleanser disclosed by the invention more than 90% of metal surface oxide layer and other contaminants, thereby greatly enhancing the bonding quality of the semiconductor packaging critical process.
Description
Technical field
The present invention relates to cleaning agent for electronic industry technical field, particularly a kind of clean-out system for semiconductor packages.
Background technology
As everyone knows, the cleaning in semiconductor technology, is mainly the contamination of removing organism and metal ion, especially requires not residual any metal ion to greatest extent.Current clean-out system used in traditional semi-conductor industry, normally contain the chemical reagent that strong acid or trieline etc. have severe corrosive and toxicity, utilize this class clean-out system to exist cleaning cost high, corrodibility is strong, and harm operator's safety and health is, the shortcoming of contaminate environment.
The disclosed water-base electron cleaning agent of Chinese patent application publication number CN1051756, that to take ethylene dinitrilotetra-acetic acid sodium and soluble fluoride be host, take alcohol ether and phenolic ether surfactant active as clean-out system ，Yi An soap and acid amides be synergistic agent, alcohols and deionized water are solvent.
U.S. US2002/021436 disclosed for remove photo-resist on microelectronic substrate and plasma residual ashes without ammonia with without the cleaning combination of hydrofluoric acid, contain one or more and can be dissolved in suitable solvent substrate, do not produce the fluoride salt (without the quaternary ammonium salt of fluoridizing of ammonium) of ammonium and hydrofluoric acid.In this patent, provided a tetrabutyl ammonium fluoride, dimethyl sulfoxide (DMSO), 1-(2-hydroxyethyl)) cleaning combination of-2-Pyrrolidone, water, trolamine and benzotriazole.
The disclosed halogen oxyacids that contains of U.S. US2004/037135, the composition for cleaning microelectronic of its salt and derivative thereof comprises: (a) oxygenant, it is selected from halogen oxyacids, the salt of described acid, or derivatives thereof, wherein said derivative is selected from halogenation isocyanic ester, dioxide peroxide, hypochlorous anhydride and hypochlorite-phosphite mixture, (b) solvent of component (a), with, one or more in optional following component: the alkali that (c) does not produce ammonium, (d) acid, (e) metal chelator or complexing agent, (f) strengthen the additive of cleaning performance, (g) metal corrosion inhibitor, (h) do not produce the fluorochemical of ammonium, (i) stablizer, be used for from halogen oxyacids, the available halogen of its salt or derivatives thereof, (j) tensio-active agent, collateral condition is for when oxidant constituents (a) is alkyl hypochlorite salt, component (b) solvent is not acid amides, sulfone, cyclobufene sultone, selenone or saturated alcoholic solvent, and when oxidant constituents (a) is hypochlorous acid, cleaning combination also must contain the alkali that does not produce ammonium.
The disclosed cleaning combination for cleaning microelectronic or nanoelectronic equipment of U.S. US2010/020974, this cleaning combination comprises: HF, its be in composition except phosphonic acids corrosion inhibitor unique acid and unique fluoride compound, at least one is selected from the primary solvent of sulfone and selenone, at least one has multi-hydroxy alkyl alcohol or the aryl alcohol cosolvent of complexing of metal ion or binding site, and water, and the optional corrosion inhibition immunomodulator compounds of at least one phosphonic acids, in described cleaning combination, do not contain amine, alkali and other salts, and there are pH≤5.5.
The disclosed cleaning combination for cleaning microelectronic substrate resistates of U.S. US2002/021374, it comprises: the highly basic that does not produce ammonium that one or more of about 0.05-30% weight contain gegenion non-nucleophilic, positively charged; One or more sterically hindered amides solvents of about 5-99.95% weight; The water of about 0-95% weight or other organic cosolvent; The bulky amine of about 0-40% weight or alkanolamine; The organic or inorganic acid of about 0-40% weight; Other metal corrosion inhibitor compound of about 0-40% weight; The tensio-active agent of about 0-5% weight; The silicate compound of the non-metallic ion of about 0-10% weight; The metal chelator of about 0-5% weight; Fluorochemical with about 0-10% weight.
Separately as polymkeric substance, peel off with composition, known have for example in Unexamined Patent 9-197681 communique and JP 2000-47401 communique, record, in the aqueous solution of fluoride salt, add DMF(dimethyl formamide), DMSO(dimethyl sulfoxide (DMSO)) etc. water-miscible organic solvent, and add as required and fluoridize the composition that hydracid forms.
Summary of the invention
Does is technical problem to be solved by this invention for existing electronic cleaning agent existing? problem and provide a kind of for semiconductor packages clean-out system, this semiconductor packages clean-out system has can remove oxidation on metal surface layer and other contamination that is greater than 90%, and the quality of semiconductor packages critical process bonding is significantly improved.
Technical problem to be solved by this invention can be achieved through the following technical solutions:
For a clean-out system for semiconductor packages, formulated by following materials in percentage by mass: Glacial acetic acid 1.0%～5%, ammonium bifluoride 0.5%～7.5%, fluorine ammonium NH4F0.2%～7.5%, dimethyl formamide 55%～70%, deionized water 25%～35%.
At the clean-out system for semiconductor packages of the present invention, the effect of each component is as follows:
The effect of Glacial acetic acid is to remove oxidation, but consumption will be controlled.
The effect of ammonium bifluoride is the fluorine of removing aluminium surface.
Fluorine ammonium NH
4the effect of F is to increase rate of permeation, is beneficial to the fluorine of removing aluminium surface.
The effect of dimethyl formamide is the solvent as cleaning machine.
Semiconductor packages clean-out system has can remove oxidation on metal surface layer and other contamination that is greater than 90%, and the quality of semiconductor packages critical process bonding is significantly improved.
Embodiment
Below in conjunction with specific embodiment, the present invention is further described.
For the formula table of each embodiment of clean-out system of semiconductor packages referring to table 1
Biao1(Biao Zhong unit is kg)
| Raw material | Example 1 | Example 2 | Example 3 | Example 4 | Example 5 | Example 6 | Example 7 | Example 8 | Example 9 |
| Glacial acetic acid | 1.0 | 1.5 | 2.0 | 2.5 | 3.0 | 3.5 | 4.0 | 4.5 | 5.0 |
| Ammonium bifluoride | 0.5 | 1.0 | 2.0 | 3.0 | 4.0 | 5.0 | 5.5 | 6.0 | 7.5 |
| Fluorine ammonium NH 4F | 0.2 | 0.8 | 1.5 | 2.0 | 3.0 | 4.0 | 5.0 | 6.0 | 7.5 |
| Dimethyl formamide | 70 | 68 | 66 | 64 | 62 | 60 | 59 | 57 | 55 |
| Deionized water | 28.3 | 28.7 | 28.5 | 28.5 | 28.0 | 27.5 | 26.5 | 26.5 | 26.0 |
The preparation method of above-described embodiment is: each component is mixed.
Washing effect
1, selected some abnormal framework and abnormal products, comprised what some had been scrapped, in air, very long product is immersed in example 1 to implementing in 9 clean-out system 10 minutes open-assembly time, after taking-up, dries, and chooses LQFP64 and SOP32 and has done the examination of water droplet angular measurement.Structure is in Table 2
Table 2
| LQFP64 | SOP32 | |
| Before cleaning | 85.6° | 80.2° |
| After example 1 cleans | 18.2° | 15.7° |
| After example 2 cleans | 18.1° | 15.6° |
| After example 3 cleans | 18.0° | 15.5° |
| After example 4 cleans | 18.3° | 15.4° |
| After example 5 cleans | 18.4° | 15.3° |
| After example 6 cleans | 18.5° | 15.8° |
| After example 7 cleans | 17.9° | 15.2° |
| After example 8 cleans | 18.0° | 15.9° |
| After example 9 cleans | 18.6° | 15.1° |
The clean-out system of semiconductor packages of the present invention stains and is oxidized serious product through the fluorine of chip surface has particularly preferred cleaning performance.
Claims (1)
1. for a clean-out system for semiconductor packages, formulated by following materials in percentage by mass: Glacial acetic acid 1.0%～5%, ammonium bifluoride 0.5%～7.5%, fluorine ammonium NH
4f 0.2%～7.5%, dimethyl formamide 55%～70%, deionized water 25%～35%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210220078.5A CN103509661A (en) | 2012-06-29 | 2012-06-29 | Cleanser for semiconductor device packaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210220078.5A CN103509661A (en) | 2012-06-29 | 2012-06-29 | Cleanser for semiconductor device packaging |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103509661A true CN103509661A (en) | 2014-01-15 |
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ID=49893096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210220078.5A Pending CN103509661A (en) | 2012-06-29 | 2012-06-29 | Cleanser for semiconductor device packaging |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103509661A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101883688A (en) * | 2007-11-16 | 2010-11-10 | Ekc技术公司 | Compositions for removal of metal hard mask etching residues from a semiconductor substrate |
-
2012
- 2012-06-29 CN CN201210220078.5A patent/CN103509661A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101883688A (en) * | 2007-11-16 | 2010-11-10 | Ekc技术公司 | Compositions for removal of metal hard mask etching residues from a semiconductor substrate |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: HUANG JINSHUN Effective date: 20150128 Owner name: SUZHOU YIBIDA PRECISION MACHINERY CO., LTD. Free format text: FORMER OWNER: LIN QINGHUA Effective date: 20150128 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; TO: 215000 SUZHOU, JIANGSU PROVINCE |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20150128 Address after: Wuzhong District Mudu town Mu Xu Road Suzhou Jiangsu province 215000 City No. 89 Applicant after: Suzhou easy to reach Pml Precision Mechanism Ltd Address before: Singapore Telok Blangah Rd No. 77 building 6 Building 238 room Applicant before: Lin Qinghua Applicant before: Huang Jinshun |
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140115 |