CN103496972B - 超低温烧结温度稳定型微波介电陶瓷Ca5Bi14O26及其制备方法 - Google Patents
超低温烧结温度稳定型微波介电陶瓷Ca5Bi14O26及其制备方法 Download PDFInfo
- Publication number
- CN103496972B CN103496972B CN201310458359.9A CN201310458359A CN103496972B CN 103496972 B CN103496972 B CN 103496972B CN 201310458359 A CN201310458359 A CN 201310458359A CN 103496972 B CN103496972 B CN 103496972B
- Authority
- CN
- China
- Prior art keywords
- powder
- hours
- ca5bi14o26
- dielectric ceramic
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310458359.9A CN103496972B (zh) | 2013-10-01 | 2013-10-01 | 超低温烧结温度稳定型微波介电陶瓷Ca5Bi14O26及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310458359.9A CN103496972B (zh) | 2013-10-01 | 2013-10-01 | 超低温烧结温度稳定型微波介电陶瓷Ca5Bi14O26及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103496972A CN103496972A (zh) | 2014-01-08 |
CN103496972B true CN103496972B (zh) | 2015-01-07 |
Family
ID=49862262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310458359.9A Active CN103496972B (zh) | 2013-10-01 | 2013-10-01 | 超低温烧结温度稳定型微波介电陶瓷Ca5Bi14O26及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103496972B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104446374B (zh) * | 2014-11-15 | 2016-06-29 | 桂林理工大学 | 温度稳定型超低介电常数微波介电陶瓷Ca5LaB3O11 |
CN105503173A (zh) * | 2015-12-15 | 2016-04-20 | 桂林理工大学 | 温度稳定型低介电常数微波介电陶瓷Ba3Bi2GeO8及其制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1275901C (zh) * | 2003-10-23 | 2006-09-20 | 浙江大学 | 一种中介电常数低温烧结微波介质陶瓷及其制备方法 |
CN102260080B (zh) * | 2010-05-31 | 2013-05-29 | 中国科学院上海硅酸盐研究所 | 一种改性CaBi2Nb2O9铋层状结构压电陶瓷材料及其制备方法 |
CN102531572A (zh) * | 2010-12-13 | 2012-07-04 | 王强 | 一种温度补偿高频微波电容器介质材料 |
JP5423708B2 (ja) * | 2011-03-29 | 2014-02-19 | 株式会社豊田中央研究所 | 異方形状粉末の製造方法 |
-
2013
- 2013-10-01 CN CN201310458359.9A patent/CN103496972B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN103496972A (zh) | 2014-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103496964B (zh) | 可低温烧结的微波介电陶瓷Ca3Bi(PO4)3及其制备方法 | |
CN105399414A (zh) | 温度稳定型微波介电陶瓷Li3BiGe2O7及其制备方法 | |
CN103496978B (zh) | 可低温烧结的微波介电陶瓷Ba2BiV3O11及其制备方法 | |
CN103496973B (zh) | 可低温烧结的微波介电陶瓷BiTiNbO6及其制备方法 | |
CN104261826A (zh) | 超低介电常数微波介电陶瓷ZnY3VO8 | |
CN103570345A (zh) | 低温烧结微波介电陶瓷Bi12MgO19及其制备方法 | |
CN103539444B (zh) | 低温烧结微波介电陶瓷Ca2Bi2O5及其制备方法 | |
CN103467095A (zh) | 可低温烧结的微波介电陶瓷SrCuV2O7及其制备方法 | |
CN104261832A (zh) | 可低温烧结的超低介电常数微波介质陶瓷BaY4V2O12 | |
CN103524126B (zh) | 低温烧结微波介电陶瓷CaBi2O4及其制备方法 | |
CN104876570A (zh) | 高品质因数低介电常数微波介电陶瓷BaLi3La3W2O13 | |
CN104891992A (zh) | 高品质因数低介电常数微波介电陶瓷BaLiBiW2O9 | |
CN103496972B (zh) | 超低温烧结温度稳定型微波介电陶瓷Ca5Bi14O26及其制备方法 | |
CN104311022A (zh) | 超低介电常数微波介电陶瓷Li2Bi3V7O23及其制备方法 | |
CN103553614B (zh) | 可低温烧结的微波介电陶瓷La7Nb3Mo4O30及其制备方法 | |
CN103449814B (zh) | 可低温烧结的微波介电陶瓷Sr2WCuO6 | |
CN105272241A (zh) | 温度稳定型低介电常数微波介电陶瓷LiCaVO4 | |
CN104876572A (zh) | 高品质因数超低介电常数微波介电陶瓷CaLi3La3Mo2O13 | |
CN103496742B (zh) | 可低温烧结的微波介电陶瓷Ca3Bi4V2O14及其制备方法 | |
CN104261827A (zh) | 可低温烧结的低介电常数微波介质陶瓷Bi2MgW5O19 | |
CN104261824A (zh) | 可低温烧结的超低介电常数微波介电陶瓷Bi2ZnW3O13 | |
CN103964835B (zh) | 可低温烧结的温度稳定型微波介电陶瓷LiVP2O8及其制备方法 | |
CN104003710B (zh) | 可低温烧结的微波介电陶瓷Li3Ti2PO8及其制备方法 | |
CN103435348B (zh) | 可低温烧结的微波介电陶瓷Sr8CuW3O18及其制备方法 | |
CN103496971B (zh) | 可低温烧结的微波介电陶瓷Ca4Bi6O13及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP02 | Change in the address of a patent holder |
Address after: 541001 Diecai District, Guilin, Zhongshan North Road, No. 39, Patentee after: Guilin University of Technology Address before: 541004 Guilin city of the Guangxi Zhuang Autonomous Region Road No. 12 building of Guilin University of Technology Patentee before: Guilin University of Technology |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: No. 12, Jian Gong Road, Guilin, the Guangxi Zhuang Autonomous Region Patentee after: Guilin University of Technology Address before: 541001 Zhongshan North Road 39, Diecai District, Guilin, the Guangxi Zhuang Autonomous Region. Patentee before: Guilin University of Technology |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201230 Address after: 215600 room a1307, 109 Shazhou West Road, yangshe Town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee after: Suzhou Hongwu Technology Intermediary Service Co.,Ltd. Address before: 541004 the Guangxi Zhuang Autonomous Region Guilin Construction Road No. 12 Patentee before: GUILIN University OF TECHNOLOGY |