CN103492951A - 增大多光子成像分辨率的方法 - Google Patents

增大多光子成像分辨率的方法 Download PDF

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Publication number
CN103492951A
CN103492951A CN201280019462.7A CN201280019462A CN103492951A CN 103492951 A CN103492951 A CN 103492951A CN 201280019462 A CN201280019462 A CN 201280019462A CN 103492951 A CN103492951 A CN 103492951A
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CN
China
Prior art keywords
photon
voxel
micrometer structure
dimensional micrometer
dimensional
Prior art date
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Pending
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CN201280019462.7A
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English (en)
Chinese (zh)
Inventor
R·J·德沃埃
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication date
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Publication of CN103492951A publication Critical patent/CN103492951A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0037—Production of three-dimensional images
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y70/00—Materials specially adapted for additive manufacturing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G03F7/2055—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser for the production of printing plates; Exposure of liquid photohardening compositions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Polymerisation Methods In General (AREA)
CN201280019462.7A 2011-04-22 2012-04-17 增大多光子成像分辨率的方法 Pending CN103492951A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161478180P 2011-04-22 2011-04-22
US61/478,180 2011-04-22
PCT/US2012/033874 WO2012145282A2 (en) 2011-04-22 2012-04-17 Enhanced multi-photon imaging resolution method

Publications (1)

Publication Number Publication Date
CN103492951A true CN103492951A (zh) 2014-01-01

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ID=46026938

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280019462.7A Pending CN103492951A (zh) 2011-04-22 2012-04-17 增大多光子成像分辨率的方法

Country Status (5)

Country Link
US (1) US20140030655A1 (https=)
EP (1) EP2699965A2 (https=)
JP (1) JP2014517856A (https=)
CN (1) CN103492951A (https=)
WO (1) WO2012145282A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2718766A1 (en) 2011-06-08 2014-04-16 3M Innovative Properties Company Photoresists containing polymer-tethered nanoparticles
JP2015512061A (ja) * 2012-02-28 2015-04-23 スリーエム イノベイティブ プロパティズ カンパニー 陰性造影組成物を用いた多光子硬化方法
JP6566952B2 (ja) 2013-12-06 2019-08-28 スリーエム イノベイティブ プロパティズ カンパニー 光反応性液体組成物及び構造体の作製方法
IT202100013421A1 (it) * 2021-05-24 2022-11-24 Fondazione St Italiano Tecnologia Formulazioni di fotoresist per tecniche di microstampa 3D
EP4160313A1 (en) * 2021-09-30 2023-04-05 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Method for non-invasive production of defined structures inside compartements and compartment

Citations (5)

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US20030155667A1 (en) * 2002-12-12 2003-08-21 Devoe Robert J Method for making or adding structures to an article
US20040012872A1 (en) * 2001-06-14 2004-01-22 Fleming Patrick R Multiphoton absorption method using patterned light
US20040067451A1 (en) * 2000-06-15 2004-04-08 Devoe Robert J. Multiphoton photochemical process and articles preparable thereby
US20040223385A1 (en) * 2000-06-15 2004-11-11 Fleming Patrick R. Multidirectional photoreactive absorption method
CN101821302A (zh) * 2007-10-11 2010-09-01 3M创新有限公司 高功能性多光子可固化反应性物质

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US3987037A (en) 1971-09-03 1976-10-19 Minnesota Mining And Manufacturing Company Chromophore-substituted vinyl-halomethyl-s-triazines
US3729313A (en) 1971-12-06 1973-04-24 Minnesota Mining & Mfg Novel photosensitive systems comprising diaryliodonium compounds and their use
US3808006A (en) 1971-12-06 1974-04-30 Minnesota Mining & Mfg Photosensitive material containing a diaryliodium compound, a sensitizer and a color former
US3779778A (en) 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
US3741769A (en) 1972-10-24 1973-06-26 Minnesota Mining & Mfg Novel photosensitive polymerizable systems and their use
AU497960B2 (en) 1974-04-11 1979-01-25 Minnesota Mining And Manufacturing Company Photopolymerizable compositions
US4250053A (en) 1979-05-21 1981-02-10 Minnesota Mining And Manufacturing Company Sensitized aromatic iodonium or aromatic sulfonium salt photoinitiator systems
US4642126A (en) 1985-02-11 1987-02-10 Norton Company Coated abrasives with rapidly curable adhesives and controllable curvature
US4652274A (en) 1985-08-07 1987-03-24 Minnesota Mining And Manufacturing Company Coated abrasive product having radiation curable binder
CA1323949C (en) 1987-04-02 1993-11-02 Michael C. Palazzotto Ternary photoinitiator system for addition polymerization
US4859572A (en) 1988-05-02 1989-08-22 Eastman Kodak Company Dye sensitized photographic imaging system
US5235015A (en) 1991-02-21 1993-08-10 Minnesota Mining And Manufacturing Company High speed aqueous solvent developable photopolymer compositions
US6267913B1 (en) 1996-11-12 2001-07-31 California Institute Of Technology Two-photon or higher-order absorbing optical materials and methods of use
WO1998021521A1 (en) 1996-11-12 1998-05-22 California Institute Of Technology Two-photon or higher-order absorbing optical materials and methods of use
US6025406A (en) 1997-04-11 2000-02-15 3M Innovative Properties Company Ternary photoinitiator system for curing of epoxy resins
US5770737A (en) 1997-09-18 1998-06-23 The United States Of America As Represented By The Secretary Of The Air Force Asymmetrical dyes with large two-photon absorption cross-sections
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US20040067451A1 (en) * 2000-06-15 2004-04-08 Devoe Robert J. Multiphoton photochemical process and articles preparable thereby
US20040223385A1 (en) * 2000-06-15 2004-11-11 Fleming Patrick R. Multidirectional photoreactive absorption method
US20040012872A1 (en) * 2001-06-14 2004-01-22 Fleming Patrick R Multiphoton absorption method using patterned light
US20030155667A1 (en) * 2002-12-12 2003-08-21 Devoe Robert J Method for making or adding structures to an article
CN101821302A (zh) * 2007-10-11 2010-09-01 3M创新有限公司 高功能性多光子可固化反应性物质

Non-Patent Citations (2)

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C. A. LEATHERDALE, ET AL: "Two-photon microfabrication using two-component photoinitiation systems: effect of photosensitizer and acceptor concentrations", 《PROCEEDINGS OF THE SPIE》 *
C. A. LEATHERDALE, ET AL: "Two-photon microfabrication using two-component photoinitiation systems: effect of photosensitizer and acceptor concentrations", 《PROCEEDINGS OF THE SPIE》, vol. 5211, 4 November 2003 (2003-11-04), pages 112 - 123, XP002677966, DOI: doi:DOI:10.1117/12.508087 *

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Publication number Publication date
WO2012145282A3 (en) 2013-01-03
WO2012145282A2 (en) 2012-10-26
EP2699965A2 (en) 2014-02-26
US20140030655A1 (en) 2014-01-30
JP2014517856A (ja) 2014-07-24

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Application publication date: 20140101