CN103489873A - Array substrate, manufacture method thereof and display device - Google Patents

Array substrate, manufacture method thereof and display device Download PDF

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Publication number
CN103489873A
CN103489873A CN201310429312.XA CN201310429312A CN103489873A CN 103489873 A CN103489873 A CN 103489873A CN 201310429312 A CN201310429312 A CN 201310429312A CN 103489873 A CN103489873 A CN 103489873A
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array base
manufacture method
base palte
pixel electrode
layer
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CN103489873B (en
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吴洪江
杨新元
袁剑峰
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Abstract

The invention provides an array substrate, a manufacture method thereof and a display device and belongs to the technical field of display. The array substrate, the manufacture method thereof and the display device can solve the problem that the manufacture technology of pixel electrodes and direction matching protrusions of array substrates in the prior art is complex. The manufacture method of the array substrate comprises the steps of forming a pixel electrode membrane layer, and forming a direction matching protrusion layer on the pixel electrode membrane layer; through the stair exposure technology, forming a remaining complete direction matching protrusion layer in the position of a non-exposure area, and forming the structure of a direction matching protrusion layer of the remaining part of a part of exposure area in the non-direction-matching-protrusion layer of an exposure area; through the etching technology, removing the pixel electrode membrane layer of the non-direction-matching-protrusion layer area so as to form the graph of a pixel electrode; forming the graph of the direction matching protrusion through the ashing technology. The array substrate is manufactured through the manufacture method. The display device comprises the array substrate. The manufacture method of the array substrate simplifies the manufacturing technology of the array substate.

Description

Array base palte and preparation method thereof, display unit
Technical field
The invention belongs to the Display Technique field, be specifically related to a kind of array base palte and preparation method thereof, display unit.
Background technology
Along with the development of tft liquid crystal Display Technique, high permeability, large scale, low-power consumption, low cost becomes the developing direction of following display floater.Obviously, simplifying product manufacture is one of important channel reduced production costs.
In the array base palte manufacturing process of Thin Film Transistor-LCD, need repeatedly composition technique could form the figure of required rete.For VA(Vertical Alignment, vertical orientation) Thin Film Transistor-LCD of pattern, also be provided with orientation bulge (protrusion) on the pixel electrode of its array base palte (pixel electrode), the orientation bulge is for the liquid crystal molecule of same pixel cell is tilted to different directions, thus the brightness uniformity of pixel cell when improvement is observed from diverse location.In the prior art, the figure of pixel electrode and orientation bulge forms respectively through twice composition technique.Particularly, as depicted in figs. 1 and 2, the figure that forms pixel electrode 61 comprises the steps:
Form by a composition technique figure that comprises grid 17 and grid line 14 on substrate;
Be formed with grid 17 and grid line 14 above deposition gate insulation layer 2 and active layer 3, be formed with the figure in source region by composition technique;
Above active area 3, sedimentary origin leaks metal level, by a composition technique, forms the figure that comprises data wire 4, source electrode 15 and drain electrode 16;
Deposit passivation layer 5 above formation active electrode 15 and drain electrode 16 figures, and form the via hole 18 of connected pixel electrode 61 by a composition technique on drain electrode 16;
Pass through the figure of a composition technique formation pixel electrode 61 above passivation layer 5.
As shown in Figure 3, the figure that forms orientation bulge 94 need to be through forming the techniques such as orientation bulge rete, exposure, development, etching and photoresist lift off, thereby form the figure of orientation bulge 94 through composition technique.
The inventor finds that in prior art, at least there are the following problems: the figure that forms respectively pixel electrode and orientation bulge through twice composition technique, technological process is more complicated, the material and facility cost is higher, be unfavorable for energy-efficient, thereby cause the competitiveness of product to descend.
Summary of the invention
Technical problem to be solved by this invention comprises, form the figure of pixel electrode and orientation bulge for available technology adopting Twi-lithography composition artwork technique, thereby make technological process more complicated, the problem that the material and facility cost is higher, provide a kind of array base palte and preparation method thereof and display unit that composition technique forms the figure of pixel electrode and orientation bulge of passing through.
The technical scheme that solution the technology of the present invention problem adopts is a kind of manufacture method of array base palte, comprising:
Form the pixel electrode rete, form orientation bulge layer on the pixel electrode rete;
By the ladder exposure technology, be formed on non-exposed area and remain complete orientation bulge layer, at exposure region without orientation bulge layer, in the structure of the orientation bulge layer of part exposure region remainder;
By etching technics, remove the pixel electrode rete without orientation bulge layer region, form the figure of pixel electrode;
Form the figure of orientation bulge by cineration technics.
Preferably, the mask plate used in described ladder exposure technology is intermediate tone mask plate or gray level mask plate.
Preferably, described orientation bulge layer is the organic film with ligh-induced effect, and described ladder exposure technology is for directly being exposed to organic film and developing.
Preferably, described organic film is the esters of acrylic acid organic film.
Preferably, the generation type of described organic film is slit rubbing method or method of spin coating.
Preferably, the thickness of described orientation bulge layer 20000~ between, the thickness of the described layer of the orientation bulge at part exposure region remainder 3000~
Figure BDA0000384131790000032
between.
Preferably, described etching technics is wet-etching technology, and described cineration technics is dry etch process.
Preferably, the mist that the gas used in described cineration technics is SF6 and O2.
The manufacture method of array base palte of the present invention, form the figure of pixel electrode and orientation bulge by composition technique, simplified the technological process of production, reduced the cost of material and facility, thereby improved the competitiveness of product.
Solving the technical scheme that the technology of the present invention problem adopts is a kind of array base palte, comprises pixel electrode and orientation bulge, and described pixel electrode and orientation bulge are prepared by the manufacture method by above-mentioned array base palte.
Array base palte of the present invention is by the preparation of the manufacture method of above-mentioned array base palte, so technological process more simplifies, and production efficiency improves.
The technical scheme that solution the technology of the present invention problem adopts is a kind of display unit, and described display unit comprises above-mentioned array base palte.
Display unit of the present invention comprises above-mentioned array base palte, and the simplification of the technological process of production makes the production cost of display unit reduce.
The accompanying drawing explanation
The floor map that Fig. 1 is array base palte in prior art;
The cutaway view that Fig. 2 is array base palte A-A direction in prior art, comprising the making of mask plate with the signal pixel electrode;
Fig. 3 is that in prior art, the orientation bulge is made schematic diagram;
Pixel electrode in the manufacture method of the array base palte that Fig. 4 is the embodiment of the present invention 1 and orientation bulge are made schematic diagram;
Structural representation after pixel electrode layer film forming in the manufacture method of the array base palte that Fig. 5 is the embodiment of the present invention 1;
Structural representation after orientation bulge layer film forming in the manufacture method of the array base palte that Fig. 6 is the embodiment of the present invention 1;
The structural representation of array base palte after ladder exposure technology in the manufacture method of the array base palte that Fig. 7 is the embodiment of the present invention 1;
The structural representation of the array base palte after the pixel electrode layer etching technics in the manufacture method of the array base palte that Fig. 8 is the embodiment of the present invention 1;
The structural representation of the orientation bulge formed after the cineration technics in the manufacture method of the array base palte that Fig. 9 is the embodiment of the present invention 1;
Figure 10 is array base palte and liquid crystal distribution schematic diagram after color membrane substrates becomes box.
Wherein Reference numeral is: 1, glass substrate; 2, gate insulation layer; 3, active layer; 4, data wire; 5, passivation layer; 6, pixel electrode rete; 61, pixel electrode; 7, pixel electrode rete mask plate; 8, exposure machine light; 9, orientation bulge layer; 91, exposure region; 92, part exposure region; 93, non-exposed area; 94, orientation bulge; 11, mask plate; 111, open region; 112, part shading region; 113, shading region; 12, color membrane substrates; 13, liquid crystal; 14, grid line; 15, source electrode; 16, drain electrode; 17, grid; 18, via hole.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Embodiment 1:
The present embodiment provides a kind of manufacture method of array base palte, by reference to the accompanying drawings 1 to 3, described array base palte comprises grid 17, grid line 14, gate insulation layer 2, active layer 3, source electrode 15, drain electrode 16, data wire 4, passivation layer 5, pixel electrode 61 and the orientation bulge 94 etc. that are formed on glass substrate 1 top, its form passivation layer 5(comprise form passivation layer 5 itself) preparation method before is same as the prior art, at this, no longer be described in detail.
The manufacture method of the array base palte that the present embodiment provides is unlike the prior art: by a composition technique, form the figure that comprises pixel electrode 61 and orientation bulge 94.Specifically comprise the steps:
S01, as shown in Figure 5 forms pixel electrode rete 6 on passivation layer 5, as shown in Figure 6, forms orientation bulge layer 9 on pixel electrode rete 6.
Wherein, the material of pixel electrode rete 6 adopts tin indium oxide, and its generation type is sputter or vacuum evaporation.
Preferably, the thickness of orientation bulge layer 9 20000~
Figure BDA0000384131790000051
between.Preferably, orientation bulge layer 9 is for having the organic film of ligh-induced effect.Further preferred, organic film is the esters of acrylic acid organic film.Other organic films (such as the polyimide organic film) with ligh-induced effect also can be used for making the orientation bulge layer 9 in the present embodiment, in the present embodiment, preferably take the esters of acrylic acid organic film as example, but do not limit the kind of the organic film with ligh-induced effect.
Orientation bulge layer 9 has adopted the organic film with ligh-induced effect, does not therefore need to apply photoresist layer again, has correspondingly also saved the technique of stripping photoresist, and then has simplified the technological process of production.
Preferably, the generation type of organic film is slit rubbing method or method of spin coating.
It should be noted that, orientation bulge layer 9 in the present embodiment is the organic films with ligh-induced effect, if do not adopt the organic film with ligh-induced effect, by apply photoresist on orientation bulge layer 9, be combined with the figure that other techniques also can realize forming by composition technique pixel electrode 61 and orientation bulge 94.
S02, as shown in Fig. 4 and Fig. 7, by the ladder exposure technology, be formed on 93 position, non-exposed area and remain complete orientation bulge layer 9, at exposure region 91 without orientation bulge layer 9, in the structure of the orientation bulge layer 9 of part exposure region 92 remainders.
Preferably, the mask plate 11 used in the ladder exposure technology is intermediate tone mask plate or gray level mask plate.The open region 111 of mask plate 11 is corresponding with the exposure region 91 of orientation bulge layer 9, mask plate 11 part shading regions 112 are corresponding with the part exposure region 92 of orientation bulge layer 9, the shading region 113 of mask plate 11 is corresponding with the non-exposed area 93 of orientation bulge layer 9, because the transmitance of the open region 111 of mask plate 11,113 pairs of exposure machine light 8 of part shading region 112 and shading region is different, thereby realize the ladder exposure to orientation bulge layer 9.
Preferably, the thickness of the orientation bulge layer 9 of part exposure region remainder be 3000~
Figure BDA0000384131790000052
between.This zone 3000~
Figure BDA0000384131790000053
between orientation bulge layer 9 in the pixel electrode rete is carried out to the process of etching, can protect the pixel electrode rete of these regional orientation bulge layer 9 belows not to be etched away.
S03, as shown in Figure 8, by etching technics, remove the pixel electrode rete 6 without orientation bulge layer 9 zone, forms the figure of pixel electrode 61;
Preferably, the etching technics of pixel electrode rete 6 adopted to wet-etching technology.Parameter in etching process is: temperature is controlled between 40~60 ℃, and the time is controlled between 60~80S, and solution comprises sulfuric acid, nitric acid, additive and water, wherein the mass ratio of each constituent is: sulfuric acid is about 8%, nitric acid is about 4%, and additive is about 2%, and water is about 86%.
S04, as shown in Figure 9, form the figure of orientation bulge 94 by cineration technics.
Preferably, cineration technics adopts dry etch process, and the gas of use is SF 6and O 2mist, SF wherein 6and O 2the gas volume ratio is approximately 3 to 10.The dry acc power of carving is selected between 10000~15000W, and pressure is controlled between 50~150mT, and temperature is controlled between 30~70 ℃, and etch period is controlled between 50~80S.
The manufacture method of the array base palte of the present embodiment, form the figure of pixel electrode 61 and orientation bulge 94 by composition technique, simplified the technological process of production, reduced the cost of material and facility, thereby improved the competitiveness of product.
Further it should be noted that, the manufacture method of array base palte of the present invention also can be applied to make public electrode and the orientation bulge on color membrane substrates, thereby by the ladder exposure technology, be combined with the organic film with ligh-induced effect, forms the figure of public electrode and orientation bulge through a composition technique realization as orientation bulge layer.The distribution situation of liquid crystal molecule after Figure 10 in accompanying drawing shows array base palte and color membrane substrates becomes box.
Embodiment 2:
The present embodiment provides a kind of array base palte, in conjunction with Fig. 4, comprises pixel electrode 61 and orientation bulge 94, certainly, also comprises as known structures such as grid and grid lines.Wherein, pixel electrode 61 and orientation bulge 94 are prepared by manufacture method by above-mentioned array base palte.
The array base palte of the present embodiment is by the preparation of the manufacture method of above-mentioned array base palte, so technological process more simplifies, and production efficiency improves.
Embodiment 3:
The present embodiment provides a kind of display unit, and display unit comprises above-mentioned array base palte, certainly, also comprises as known structures such as color membrane substrates.Described display unit can be: any product or parts with Presentation Function such as display panels, Electronic Paper, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator.
The display unit of the present embodiment comprises above-mentioned array base palte, and the simplification of the array base palte technological process of production makes the production cost of display unit reduce.
Be understandable that, above execution mode is only the illustrative embodiments adopted for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.

Claims (10)

1. the manufacture method of an array base palte, is characterized in that, comprising:
Form the pixel electrode rete, form orientation bulge layer on the pixel electrode rete;
By the ladder exposure technology, be formed on non-exposed area and remain complete orientation bulge layer, at exposure region without orientation bulge layer, in the structure of the orientation bulge layer of part exposure region remainder;
By etching technics, remove the pixel electrode rete without orientation bulge layer region, form the figure of pixel electrode;
Form the figure of orientation bulge by cineration technics.
2. the manufacture method of array base palte according to claim 1, is characterized in that, the mask plate used in described ladder exposure technology is intermediate tone mask plate or gray level mask plate.
3. the manufacture method of array base palte according to claim 1, is characterized in that, described orientation bulge layer is the organic film with ligh-induced effect, and described ladder exposure technology is for directly being exposed and develop described organic film.
4. the manufacture method of array base palte according to claim 3, is characterized in that, described organic film is the esters of acrylic acid organic film.
5. the manufacture method of array base palte according to claim 3, is characterized in that, the generation type of described organic film is slit rubbing method or method of spin coating.
6. the manufacture method of array base palte according to claim 1, is characterized in that, the thickness of described orientation bulge layer 20000~
Figure FDA0000384131780000011
between, the thickness of the described layer of the orientation bulge at part exposure region remainder 3000~ between.
7. the manufacture method of array base palte according to claim 1, is characterized in that, described etching technics is wet-etching technology, and described cineration technics is dry etch process.
8. the manufacture method of array base palte according to claim 1, is characterized in that, the gas used in described cineration technics is SF 6and O 2mist.
9. an array base palte, comprise pixel electrode and orientation bulge, it is characterized in that, described pixel electrode and orientation bulge are prepared by the manufacture method by the described array base palte of claim 1 to 8 any one.
10. a display unit, is characterized in that, described display unit comprises array base palte claimed in claim 9.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105185739A (en) * 2015-06-26 2015-12-23 京东方科技集团股份有限公司 Array substrate making method, mask, array substrate and display device
CN105679707A (en) * 2016-04-20 2016-06-15 京东方科技集团股份有限公司 Array substrate and manufacturing method thereof and display device
CN110335871A (en) * 2019-06-11 2019-10-15 惠科股份有限公司 Preparation method, array substrate and the display panel of array substrate

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Publication number Priority date Publication date Assignee Title
JP2000019530A (en) * 1998-06-30 2000-01-21 Toshiba Corp Liquid crystal display device
JP2005321486A (en) * 2004-05-07 2005-11-17 National Institute Of Advanced Industrial & Technology Liquid crystal alignment layer, liquid crystal display and its manufacturing method
CN101546733A (en) * 2008-03-28 2009-09-30 北京京东方光电科技有限公司 Method for manufacturing TFT-LCD array substrate and color film substrate
CN102645793A (en) * 2011-03-28 2012-08-22 京东方科技集团股份有限公司 Generation method and system of columnar spacer matter as well as liquid crystal display panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000019530A (en) * 1998-06-30 2000-01-21 Toshiba Corp Liquid crystal display device
JP2005321486A (en) * 2004-05-07 2005-11-17 National Institute Of Advanced Industrial & Technology Liquid crystal alignment layer, liquid crystal display and its manufacturing method
CN101546733A (en) * 2008-03-28 2009-09-30 北京京东方光电科技有限公司 Method for manufacturing TFT-LCD array substrate and color film substrate
CN102645793A (en) * 2011-03-28 2012-08-22 京东方科技集团股份有限公司 Generation method and system of columnar spacer matter as well as liquid crystal display panel

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105185739A (en) * 2015-06-26 2015-12-23 京东方科技集团股份有限公司 Array substrate making method, mask, array substrate and display device
CN105679707A (en) * 2016-04-20 2016-06-15 京东方科技集团股份有限公司 Array substrate and manufacturing method thereof and display device
CN110335871A (en) * 2019-06-11 2019-10-15 惠科股份有限公司 Preparation method, array substrate and the display panel of array substrate
CN110335871B (en) * 2019-06-11 2021-11-30 惠科股份有限公司 Preparation method of array substrate, array substrate and display panel
US11961852B2 (en) 2019-06-11 2024-04-16 HKC Corporation Limited Manufacture method of array substrate, array substrate, and display panel

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