CN103484806B - A kind of Nanocrystallization method for surface of tungsten-copper alloy - Google Patents
A kind of Nanocrystallization method for surface of tungsten-copper alloy Download PDFInfo
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- CN103484806B CN103484806B CN201310410808.2A CN201310410808A CN103484806B CN 103484806 B CN103484806 B CN 103484806B CN 201310410808 A CN201310410808 A CN 201310410808A CN 103484806 B CN103484806 B CN 103484806B
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- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000007709 nanocrystallization Methods 0.000 title claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims abstract description 15
- 239000011859 microparticle Substances 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims description 39
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000000356 contaminant Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 238000001311 chemical methods and process Methods 0.000 claims description 4
- 238000002203 pretreatment Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 abstract description 7
- 239000010937 tungsten Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000002679 ablation Methods 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 238000010891 electric arc Methods 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 239000002086 nanomaterial Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000843 powder Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Abstract
The invention discloses a kind of Nanocrystallization method for surface of tungsten-copper alloy, will be placed in supersonic microparticle bombardment device through pretreated tungsten-copper alloy and carry out Surface Nanocrystalline, and then carry out stress relief annealing.Nanocrystallization method for surface of tungsten-copper alloy of the present invention, by to pretreated tungsten-copper alloy successively through making Nano surface and stress relief annealing process, can the grain-size on significantly refinement tungsten-copper alloy surface, alloy surface formed certain depth, tungsten/equally distributed nanostructure of copper two-phase, the thickness of tungsten-copper alloy surface nanometer layer is 0.3-1.2mm; Significantly improve the surface hardness of tungsten-copper contact material, anti-electric-arc ablation characteristics, voltage breakdown obviously rises, and shut off value significantly declines; And it is simple to operate, less energy consumption, cost are low, production efficiency is high, be easy to suitability for industrialized production.
Description
Technical field
The invention belongs to technical field of material surface treatment, relate to a kind of Nanocrystallization method for surface of tungsten-copper alloy.
Background technology
The performance such as tungsten-copper alloy has high temperature resistant, arc ablation resistance, anti-melting welding, cut-off current is little, thermal electron emission ability is low, is widely used in the high temperature-resistant part in contact material and aerospace.Although tungsten-copper alloy is used widely, its performance still has much room for improvement.Tungsten-copper alloy as contact material under arms time, the hard arc produced in opening and closing process due to high-voltage large current is assembled at material surface, causes surface to occur serious local melting, forms rhegmalypt and cause material premature failure.Research finds, tungsten copper contact material performance depends on and its structure organization; Tiny and the microstructure be evenly distributed can improve voltage breakdown, reduces shut off value, rhegmalypt is more disperseed, thus significantly improves materials'use performance and life-span.Therefore, the making Nano surface of tungsten-copper alloy has great practical application meaning.
Summary of the invention
The object of this invention is to provide a kind of Nanocrystallization method for surface of tungsten-copper alloy, solve the hard arc that existing tungsten-copper alloy produces in opening and closing process due to high-voltage large current to assemble at material surface, cause surface to occur serious local melting, form rhegmalypt and cause the problem of material premature failure.
The technical solution adopted in the present invention is, a kind of Nanocrystallization method for surface of tungsten-copper alloy, will be placed in supersonic microparticle bombardment device and carry out Surface Nanocrystalline, and then carry out stress relief annealing through pretreated tungsten-copper alloy.
Feature of the present invention is also,
The pre-treatment of tungsten-copper alloy is that the tungsten-copper alloy being 10%-50% to copper content adopts machinery or chemical process effects on surface carry out polishing and fall surface and oil contaminant with acetone or alcohol washes.
The processing parameter of Surface Nanocrystalline is: gas pressure intensity is 0.3-4.0MPa, hard particles particle diameter is 0.1-0.3mm, hard particles flow 10-30g/s, voltage 5-30V, treatment time 10-60min.
Hard particles is aluminum oxide (α-Al
2o
3), boron nitride (BN) or S110 stainless steel; Gas is air or nitrogen.
The processing parameter of stress relief annealing is: vacuum tightness is 1 × 10
-4-1 × 10
-3pa, annealing temperature 100-300 DEG C, annealing time 10-60min.
The invention has the beneficial effects as follows,
1. Nanocrystallization method for surface of tungsten-copper alloy of the present invention, by to pretreated tungsten-copper alloy successively through making Nano surface and stress relief annealing process, can the grain-size on significantly refinement tungsten-copper alloy surface, alloy surface formed certain depth, tungsten/equally distributed nanostructure of copper two-phase, the thickness of tungsten-copper alloy surface nanometer layer is 0.3-1.2mm; Significantly improve the surface hardness of tungsten-copper contact material, anti-electric-arc ablation characteristics, voltage breakdown obviously rises, and shut off value significantly declines.
2. Nanocrystallization method for surface of tungsten-copper alloy of the present invention, simple to operate, less energy consumption, cost are low, production efficiency is high, be easy to suitability for industrialized production.
Accompanying drawing explanation
Fig. 1 is the structure iron of supersonic microparticle bombardment device used in Nanocrystallization method for surface of tungsten-copper alloy of the present invention.
In figure, 1. gas compressor, 2. powder feeder, 3. gas heater, 4. controller, 5. superonic flow nozzzle, 6. working spaces.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Nanocrystallization method for surface of tungsten-copper alloy of the present invention, will be placed in supersonic microparticle bombardment device through pretreated tungsten-copper alloy and carry out Surface Nanocrystalline, then carry out stress relief annealing.
Specifically implement according to following steps:
Step 1, adopts machinery or chemical process effects on surface carry out polishing and fall surface and oil contaminant with acetone or alcohol washes to the tungsten-copper alloy that copper content is 10%-50%;
Step 2, will be placed in supersonic microparticle bombardment device through the pretreated tungsten-copper alloy of step 1 and carry out Surface Nanocrystalline; Processing parameter is: gas pressure intensity is 0.3-4.0MPa, gas is air or nitrogen, hard particles particle diameter 0.1-0.3mm, hard particles flow 10-30g/s, hard particles are aluminum oxide (α-Al
2o
3), boron nitride (BN) or S110 stainless steel, voltage 5-30V, treatment time 10-60min;
Step 3, is placed in vacuum oven by the tungsten-copper alloy through step 2 Surface Nanocrystalline, is 1 × 10 in vacuum tightness
-4-1 × 10
-3pa, annealing temperature 100-300 DEG C, carry out stress relief annealing under the condition of annealing time 10-60min.
In Nanocrystallization method for surface of tungsten-copper alloy of the present invention, the structure of supersonic microparticle bombardment device used as shown in Figure 1, this device is made up of gas compressor 1, powder feeder 2, gas heater 3, controller 4, superonic flow nozzzle 5, working spaces 6, and the gas compressor 1 with gas-holder is connected with gas heater 3 with powder feeder 2 respectively by pipeline; Controller 4 is connected with nozzle 5 with powder feeder 2, gas heater 3 respectively by circuit, is also to be controlled it by mechanical manipulator and electric current and regulate; Superonic flow nozzzle 5 presses Bearing score nozzle principle design, is installed on the ingress of working spaces 6, and is connected with powder feeder 2 with gas heater 3 by pipeline; Stage microscope in working spaces can 360 ° of rotations.
Supersonic microparticle bombardment device working process is: the high pressure gas after gas compressor 1 processes, in the valve regulated of controller 4, after making a road pressurized gas heat 50 ~ 80 DEG C by gas heater 3, can enter superonic flow nozzzle 5 with higher gas velocity, comparatively high temps is also conducive to by a small amount of viscous deformation of the workpiece of nanometer simultaneously; Another road enters powder feeder 2, carry hard particles and enter superonic flow nozzzle 5, the orthogonal air-flow of two-way enters narrowed throat by the contraction section in superonic flow nozzzle 5 and accelerates to supersonic speed to expanding section thus by hard particles, speed can reach 300-1200m/s, finally moves at high speed into the material surface reached in working spaces.
The ultimate principle of Nanocrystallization method for surface of tungsten-copper alloy of the present invention is: utilize superonic flow nozzzle by a large amount of rigid particles entrained by pressurized gas with ultraspeed bombardment tungsten-copper alloy surface, because tungsten is distributed on Copper substrate with the particle form of certain size, when particulate bombards tungsten-copper alloy surface continuously with very high kinetic energy, tungsten particle occurs broken, and move in the Copper substrate with certain plasticity, finally make tiny tungsten particle even dispersion be distributed in copper mutually in; Meanwhile, there is violent viscous deformation mutually and produce a large amount of dislocations, twin and substructure and cause grain refining in matrix copper; Because said process can introduce certain unrelieved stress, material is in a kind of metastable condition, so need to carry out stress relief annealing at a certain temperature after supersonic speed bombardment processing, finally obtains certain depth, constitutionally stable nanometer layer.
Nanocrystallization method for surface of tungsten-copper alloy of the present invention, by to pretreated tungsten-copper alloy successively through making Nano surface and stress relief annealing process, can the grain-size on significantly refinement tungsten-copper alloy surface, alloy surface formed certain depth, tungsten/equally distributed nanostructure of copper two-phase, the thickness of tungsten-copper alloy surface nanometer layer is 0.3-1.2mm; Significantly improve the surface hardness of tungsten-copper contact material, anti-electric-arc ablation characteristics, voltage breakdown obviously rises, and shut off value significantly declines.
Nanocrystallization method for surface of tungsten-copper alloy of the present invention, simple to operate, less energy consumption, cost are low, production efficiency is high, be easy to suitability for industrialized production.
Embodiment 1
Step 1, adopts mechanical means effects on surface carry out polishing and wash surface and oil contaminant with acetone to the tungsten-copper alloy that copper content is 20%;
Step 2, will be placed in supersonic microparticle bombardment device through the pretreated tungsten-copper alloy of step 1 and carry out Surface Nanocrystalline; Processing parameter is: gas (air) pressure is 3.5MPa, hard particles particle diameter 0.3mm, hard particles flow 25g/s, hard particles are S110 stainless steel, voltage 30V, treatment time 10min;
Step 3, is placed in vacuum oven by the tungsten-copper alloy through step 2 Surface Nanocrystalline, is 1 × 10 in vacuum tightness
-3stress relief annealing is carried out under the condition of Pa, annealing temperature 200 DEG C, annealing time 30min.
The thickness that embodiment 1 processes the tungsten-copper alloy surface nanometer layer obtained is 0.45mm.
Embodiment 2
Step 1, adopts mechanical means effects on surface carry out polishing and wash surface and oil contaminant with acetone to the tungsten-copper alloy that copper content is 30%;
Step 2, will be placed in supersonic microparticle bombardment device through the pretreated tungsten-copper alloy of step 1 and carry out Surface Nanocrystalline; Processing parameter is: gas (nitrogen) pressure 2.5MPa, hard particles particle diameter are 0.3mm, hard particles flow is 20g/s, hard particles is S110 stainless steel, voltage is 20V, the treatment time is 60min;
Step 3, is placed in vacuum oven by the tungsten-copper alloy through step 2 Surface Nanocrystalline, is 1 × 10 in vacuum tightness
-3stress relief annealing is carried out under the condition of Pa, annealing temperature 200 DEG C, annealing time 30min.
The thickness that embodiment 2 processes the tungsten-copper alloy surface nanometer layer obtained is 0.8mm.
Embodiment 3
Step 1, adopts mechanical means effects on surface carry out polishing and fall surface and oil contaminant with alcohol washes to the tungsten-copper alloy that copper content is 50%;
Step 2, will be placed in supersonic microparticle bombardment device through the pretreated tungsten-copper alloy of step 1 and carry out Surface Nanocrystalline; Processing parameter is: gas (air) pressure 1.5MPa, hard particles particle diameter 0.3mm, hard particles flow 15g/s, hard particles are α-Al
2o
3, voltage 20V, treatment time 45min;
Step 3, is placed in vacuum oven by the tungsten-copper alloy through step 2 Surface Nanocrystalline, is 1 × 10 in vacuum tightness
-3stress relief annealing is carried out under the condition of Pa, annealing temperature 200 DEG C, annealing time 30min.
The thickness that embodiment 3 processes the tungsten-copper alloy surface nanometer layer obtained is 1.1mm.
Embodiment 4
Step 1, adopts chemical process effects on surface carry out polishing and fall surface and oil contaminant with alcohol washes to the tungsten-copper alloy that copper content is 10%;
Step 2, will be placed in supersonic microparticle bombardment device through the pretreated tungsten-copper alloy of step 1 and carry out Surface Nanocrystalline; Processing parameter is: gas (air) pressure 4.0MPa, hard particles particle diameter 0.1mm, hard particles flow 10g/s, hard particles are BN, voltage 10V, treatment time 30min;
Step 3, is placed in vacuum oven by the tungsten-copper alloy through step 2 Surface Nanocrystalline, is 1 × 10 in vacuum tightness
-4stress relief annealing is carried out under the condition of Pa, annealing temperature 300 DEG C, annealing time 10min.
Embodiment 5
Step 1, adopts mechanical means effects on surface carry out polishing and wash surface and oil contaminant with acetone to the tungsten-copper alloy that copper content is 20%;
Step 2, will be placed in supersonic microparticle bombardment device through the pretreated tungsten-copper alloy of step 1 and carry out Surface Nanocrystalline; Processing parameter is: gas (nitrogen) pressure 0.3MPa, hard particles particle diameter 0.2mm, hard particles flow 30g/s, hard particles are α-Al
2o
3, voltage 5V, treatment time 20min;
Step 3, is placed in vacuum oven by the tungsten-copper alloy through step 2 Surface Nanocrystalline, is 5 × 10 in vacuum tightness
-4stress relief annealing is carried out under the condition of Pa, annealing temperature 100 DEG C, annealing time 60min.
Tungsten-copper alloy is as shown in table 1 through the performance comparison before and after embodiment 1-3 process.As shown in Table 1, all have the hardness of tungsten-copper alloy after Surface Nanocrystalline and specific conductivity and comparatively significantly rise, tungsten particle size also significantly reduces, illustrate use properties be improved significantly.
The performance comparison of table 1 tungsten-copper alloy before and after embodiment 1-3 process
Claims (1)
1. a Nanocrystallization method for surface of tungsten-copper alloy, is characterized in that, will be placed in supersonic microparticle bombardment device and carry out Surface Nanocrystalline, and then carry out stress relief annealing through pretreated tungsten-copper alloy;
The pre-treatment of described tungsten-copper alloy is that the tungsten-copper alloy being 10%-50% to copper content adopts machinery or chemical process effects on surface carry out polishing and fall surface and oil contaminant with acetone or alcohol washes;
The processing parameter of described Surface Nanocrystalline is: gas pressure intensity is 0.3-4.0MPa, hard particles particle diameter is 0.1-0.3mm, hard particles flow 10-30g/s, voltage 5-30V, treatment time 10-60min;
Described hard particles is α-Al
2o
3, BN or S110 stainless steel;
The processing parameter of described stress relief annealing is: vacuum tightness is 1 × 10
-4-1 × 10
-3pa, annealing temperature 100-300 DEG C, annealing time 10-60min.
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| CN106929777A (en) * | 2017-03-03 | 2017-07-07 | 中国人民解放军火箭军工程大学 | Surface strengthening method of metal material based on blending surface nanocrystallization technology |
| CN107858593A (en) * | 2017-11-18 | 2018-03-30 | 蚌埠市华鼎机械科技有限公司 | A kind of preparation method of Heat-resistant stable, impact-resistant alloy mold |
| CN111020426B (en) * | 2019-12-03 | 2021-07-20 | 西安理工大学 | Preparation method of rapidly-strengthened copper and copper alloy |
| CN113334611B (en) * | 2021-03-26 | 2022-08-09 | 上犹京禾纳米科技有限公司 | Manufacturing method and application of nano-copper antibacterial and antiviral melt-blown fabric master batch |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1410560A (en) * | 2001-09-29 | 2003-04-16 | 中国科学院金属研究所 | Method of making nano surface of metallic material using ultrasonic speed micro particle bombardment |
| CN101886235A (en) * | 2010-06-13 | 2010-11-17 | 东北大学 | Method for selective surface nano treatment for copper-chrome alloy |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1410560A (en) * | 2001-09-29 | 2003-04-16 | 中国科学院金属研究所 | Method of making nano surface of metallic material using ultrasonic speed micro particle bombardment |
| CN101886235A (en) * | 2010-06-13 | 2010-11-17 | 东北大学 | Method for selective surface nano treatment for copper-chrome alloy |
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