CN103474425B - The miniature flexible LED area array device of high uniformity of luminance and preparation method - Google Patents
The miniature flexible LED area array device of high uniformity of luminance and preparation method Download PDFInfo
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Abstract
The miniature flexible LED area array device of high uniformity of luminance and preparation method, relate to luminescence display technical field, solve existing plane LED micro-display device and cause using restricted problem owing to not bending, electric current injects from Graphene transparent upper electrode, flow out from bottom electrode, form electric field in the devices, make positive negative carrier at luminescent layer recombination luminescence.Wherein part light is upwards through photic zone, Graphene transparent upper electrode, penetrates from lenticule; Part light arrives reflector downwards, by reflective layer reflects, through luminescent layer, photic zone, Graphene transparent upper electrode, penetrates from lenticule.Principle of luminosity due to this luminescent device is that the Carrier recombination in p-n junction is luminous, and have the nonlinear characteristic of diode current voltage, luminosity also has nonlinear characteristic with the size of Injection Current.The present invention is secretly bright by control circui phase primitive element, realizes luminescence display.
Description
Technical field
The invention belongs to luminescence display technical field, relate to a kind of new micro luminescent device, specifically the flexible micro element of a kind of AlGaInP-LED and manufacture method.
Background technology
In recent years, along with the development of electronic industry, the development of Miniature luminous device part rapidly.The micro-array of display of plane LED is compared conventional light emitting device and is had much incomparable advantage, but limits its range of application to a great extent due to its unyielding feature.Although OLED technology has good application prospect, but compared to LED, still have some shortcomings, such as in microminiature device, also there is some problems, if luminosity, uniformity, luminous efficiency etc. are not as LED, and the most outstanding be life problems, these problems can limit the application and development of OLED largely.Along with the development of science and technology, to realizing high-resolution, bright lasting and frivolous and to be applied in the demand of the miniature flexible LED array of display of curved surface more and more urgent.
Summary of the invention
The problem to be solved in the present invention is to provide the miniature flexible light-emitting diode display part based on Graphene flexible electrode, and this device has the flexible connecting material between flexible metal electrode and luminescence unit, has and is easy to feature that is bending and that be easy to carry about with one.
The miniature flexible LED area array device of high uniformity, comprises photic zone, luminescent layer, reflector, substrate, top electrode, top electrode lead-in wire, bottom electrode, bottom electrode lead-in wire, flexible region and lenticule; Being followed successively by luminescent layer, photic zone, top electrode and lenticule above described reflector, is substrate below reflector; The composition LED luminescence unit of described photic zone, luminescent layer, reflector and substrate, multiple LED luminescence unit is evenly arranged composition array of light emitting cells; Be flexible region between described multiple LED luminescence unit, flexible region makes each luminescence unit connect successively and makes LED array of light emitting cells flexible; Described euphotic upper surface is placed with top electrode, the upper surface of flexible material is placed with top electrode lead-in wire, the top electrode being in same a line goes between with top electrode and is connected successively, has bottom electrode in the underside view of part of substrate, and the bottom electrode being in same row is connected by bottom electrode lead-in wire; The upper row antarafacial in orientation that goes between that the lower lead-in wire that described bottom electrode and bottom electrode lead-in wire form arranges and top electrode and top electrode go between forms is vertical, and the material of described top electrode and top electrode lead-in wire is Graphene.
The preparation method of the miniature flexible LED area array device of high uniformity, the method is realized by following steps:
The cleaning of step one, luminescence chip and front protecting; First, select luminescence chip, described luminescence chip is made up of photic zone, luminescent layer, reflector and substrate; Then, luminescence chip is cleaned, and prepare one deck upper protective film at the euphotic upper surface of described luminescence chip;
The preparation of step 2, upper isolated groove; By photoetching and corrosion upper protective film, expose the graph window of flexible region, namely go up isolated groove figure; Under the sheltering of upper protective film and photoresist, wet etching or ICP etching are carried out to luminescence chip upper surface, remove the luminescence chip material of flexible region, form the upper isolated groove of certain depth;
The filling of step 3, upper isolated groove;
Step 3 one, on preparation has the upper surface coating flexible material of luminescence chip of isolated groove, and carry out precuring;
Step 3 two, removed the flexible material of photic zone upper surface by photoetching and etching process, and by the formation concave shape of removing photoresist and corrosion makes formed packing material upper surface again;
Step 3 three, complete the solidification completely of flexible material, remove upper protective film;
Step 4, the upper surface of luminescence chip carry out Graphene transparent flexible top electrode and top electrode lead-in wire preparation;
Step 5, prepare lenticule; The luminescence chip completing top electrode and top electrode lead-in wire is prepared the polymeric layer of high adhesion, obtains polymer lenticules by hot melt;
The front of step 6, luminescence chip is fixed; Bonding agent is adopted to be fixed on upper screening glass by the upper surface of luminescence chip;
The thinning back side of step 7, luminescence chip; Carry out thinning to the lower surface of the substrate of luminescence chip, then carry out polishing;
The pixel segmentation of step 8, luminescence chip, obtains multiple LED luminescence unit;
Step Aug. 1st, complete polishing luminescence chip substrate lower surface preparation under diaphragm;
Step 8 two, by double-sided alignment photoetching and corrosion protection film, expose flexible region window;
Step 8 three, under the sheltering of lower diaphragm and photoresist, the lower surface of luminescence chip to be etched, remove the luminescence chip material of flexible region completely, realize the pixel segmentation of luminescence chip, obtain multiple LED luminescence unit;
Step 8 four, the lower diaphragm of removal;
Step 9, prepare bottom electrode and bottom electrode lead-in wire, prepare at the back side of luminescence chip bottom electrode and bottom electrode lead-in wire, screening glass in removals, making circuit lead, complete the making of LED component.
Beneficial effect of the present invention: the course of work of miniature flexible light-emitting diode display part of the present invention is, electric current from power on pole injects, and flows out, form electric field in the devices, make positive negative carrier at luminescent layer recombination luminescence from bottom electrode.Wherein part light is upwards through photic zone, penetrates from lenticule; Part light arrives reflector downwards, by reflective layer reflects, through luminescent layer, photic zone, penetrates from lenticule.Principle of luminosity due to this luminescent device is that the Carrier recombination in p-n junction is luminous, and have the nonlinear characteristic of diode current voltage, luminosity also has nonlinear characteristic with the size of Injection Current.The present invention is secretly bright by control circui phase primitive element, realizes luminescence display.The flexible device that the present invention proposes, owing to having the connection flexible material in flexible electrode structure and groove, can realize the function of bending display, and the manufacture craft of this device is simple.The device that the present invention proposes adopts the upper and lower electrode that antarafacial is vertical, and adopts the Graphene top electrode of flexible and transparent, can obtain higher luminous efficiency in theory, and can obtain comparatively uniform CURRENT DISTRIBUTION.
Accompanying drawing explanation
Fig. 1 is the design sketch of the miniature flexible LED area array device of high uniformity of the present invention.Wherein, Fig. 1 a is the extended configuration of device, and Fig. 1 b is the case of bending of device.
The left profile figure of Fig. 2 a to be the principal section figure of the miniature flexible LED area array device of high uniformity of the present invention, Fig. 2 b be miniature flexible light-emitting diode display part of the present invention in Fig. 2.
Fig. 3 is the luminescence unit distribution map adopting square luminescence unit in the miniature flexible LED area array device of high uniformity of the present invention.
In Fig. 4, Fig. 4 a and Fig. 4 b is the two kinds of top electrodes and the top electrode pin configuration schematic diagram that adopt square luminescence unit in the miniature flexible LED area array device of high uniformity of the present invention;
In Fig. 5, Fig. 5 a to Fig. 5 d is the four kinds of bottom electrodes and the bottom electrode pin configuration schematic diagram that adopt square luminescence unit in the miniature flexible LED area array device of high uniformity of the present invention.
Fig. 6 is the luminescence unit distribution map adopting circular luminous unit in the miniature flexible LED area array device of high uniformity of the present invention.
In Fig. 7, Fig. 7 a and Fig. 7 b is the two kinds of top electrodes and the top electrode pin configuration schematic diagram that adopt circular luminous unit in the miniature flexible LED area array device of high uniformity of the present invention.
In Fig. 8, Fig. 8 a to Fig. 8 d is the four kinds of bottom electrodes and the bottom electrode pin configuration schematic diagram that adopt circular luminous unit in the miniature flexible LED area array device of high uniformity of the present invention.
In Fig. 9, Fig. 9 a to Fig. 9 m is the basic process steps of the manufacture method of the miniature flexible LED area array device of high uniformity of the present invention; Wherein, Fig. 9 n and Fig. 9 o is the left pseudosection adopting method of the present invention to obtain device, and elevation cross-sectional view.
Figure 10 is the another kind of structural representation of the miniature flexible LED area array device of high uniformity of the present invention.
Embodiment
Embodiment one, composition graphs 1 to Fig. 8 illustrate present embodiment, and the miniature flexible LED area array device of the high uniformity described in present embodiment comprises: photic zone 1, luminescent layer 2, reflector 3, substrate 4, top electrode 5, top electrode lead-in wire 9, bottom electrode 6, bottom electrode lead-in wire 10, flexible region 7 and lenticule 8; Being followed successively by luminescent layer 2, photic zone 1, top electrode 5 and lenticule 8 above reflector 3, is substrate 4 below reflector 3.Photic zone 1, luminescent layer 2, reflector 3 and substrate 4 form LED luminescence unit.LED luminescence unit is evenly arranged composition array of light emitting cells.Be flexible region 7 between luminescence unit, flexible region 7 makes each luminescence unit connect successively and makes whole LED array of light emitting cells flexible.The upper surface of photic zone 1 is placed with top electrode 5, the upper surface of flexible region 7 is placed with top electrode lead-in wire 9, the top electrode 5 being in same row and top electrode go between and 9 to be connected successively, bottom electrode 6 is had in the underside view of part of substrate 4, flexible material between pixel is placed with bottom electrode lead-in wire 10 close to the region of lower surface, the bottom electrode 6 being in same row and bottom electrode go between and 10 to be connected successively, and the shape of bottom electrode 6 is rectangle, circle, wall scroll shape, two bar shaped or other shape.Bottom electrode 6 and bottom electrode go between 10 form go between that to arrange the 9 upper lead antarafacials on direction formed that to go between with top electrode 5 and top electrode vertical down.The material of described top electrode 5 and top electrode lead-in wire 9 is graphene film.
Luminescence unit described in present embodiment is square, rectangle, circle or other shapes.Top electrode 5 shape is back-shaped, annular, wall scroll shape, two bar shaped or other shape.Also comprise the flexible region 7 of substrate 4 lower surface being positioned at LED luminescence unit in present embodiment, i.e. back side flexible material layer, described back side flexible material layer covers bottom electrode 6 and bottom electrode lead-in wire 10.
Photic zone 1 described in present embodiment, luminescent layer 2, reflector 3, substrate 4 are the general AlGaInPLED epitaxial wafer material made by traditional handicraft.The material of top electrode 5 and top electrode lead-in wire 9 is graphene film, the material of bottom electrode 14, bottom electrode lead-in wire 15 is Graphene, or be by any one in Cr/Au, Ti/Pt/Au, Ti/Mo/Au, AuGeNi/Au, Al or Cu, or be the composite membrane be made up of Cr/Au, Ti/Pt/Au, Ti/Mo/Au or AuGeNi/Au and Cu, or be the composite membrane be made up of Cr/Au, Ti/Pt/Au, Ti/Mo/Au or AuGeNi/Au and Au.Flexible region 7 material is other flexible material of polyimides or flexible-epoxy or easy coating molding, and lenticule 8 material is hard epoxy or PDMS or other high permeability material.
Embodiment two, composition graphs 9 and Figure 10 illustrate present embodiment; the miniature flexible LED area array device of the high uniformity described in present embodiment adopts top-down manufacture method, first makes Facad structure, then; protect Facad structure again, preparation structure.Detailed process is:
A. the cleaning of luminescence chip and front protecting:
A) host material that the present invention uses is luminescence chip, and luminescence chip used is made up of photic zone, luminescent layer, reflector and substrate, as illustrated in fig. 9.
B) cleaning of luminescence chip is carried out.Then at the upper surface of luminescence chip, namely photic zone upper surface prepares one deck upper protective film, as shown in figure 9b.
B. the preparation of isolated groove is gone up:
By photoetching and corrosion upper protective film, expose flexible region graph window, that is upper isolated groove figure.Under the sheltering of upper protective film and photoresist, wet etching or ICP etching are carried out to luminescence chip upper surface, remove the luminescence chip material of flexible region, form the upper isolated groove of certain depth, as is shown in fig. 9 c.
C. the filling of isolated groove is gone up:
A) the luminescence chip upper surface coating flexible material of isolated groove on preparation has, and carry out precuring, as shown in figure 9d.
B) flexible material of photic zone upper surface is removed by photoetching and etching process.And by the formation concave shape of removing photoresist and corrosion makes formed packing material upper surface again, to be conducive to top electrode attached thereto there is flexible performance.
C) solidification completely of flexible material is completed.
D) upper protective film is removed, as Fig. 9 e.
D. the preparation of Graphene transparent flexible top electrode and top electrode lead-in wire:
Carry out the making that on the luminescence unit of grapheme material, flexible top electrode goes between and the outer flexible top electrode of luminescence unit goes between, as shown in figure 9f.
E. lenticule is prepared:
The luminescence chip completing top electrode lead-in wire and the outside upper contact conductor of luminescence unit on luminescence unit is prepared the polymeric layer of high adhesion, obtains polymer lenticules by hot melt, as shown in figure 9g.
F. the front of luminescence chip is fixed:
In order to protect the luminescence chip of preparation superstructure, be fixed on upper screening glass by it with bonding agent, Fig. 9 h has been the luminescence chip that front is fixed.
G. the thinning back side of luminescence chip, namely carries out thinning to the lower surface of luminescence chip: carry out thinning to the lower surface of whole luminescence chip, after being thinned to desired thickness, carries out polishing, as illustrated in fig. 9i.
H. the pixel segmentation of luminescence chip:
A) diaphragm under the luminescence chip back side preparation completing polishing.
B) by double-sided alignment photoetching and corrosion protection film, flexible region window is exposed, as shown in Fig. 9 j.
C) under the sheltering of lower diaphragm and photoresist, luminescence chip upper surface is etched, remove the luminescence chip material of flexible region completely, realize the pixel segmentation of luminescence chip, as shown in Fig. 9 k.
D) lower diaphragm is removed.
I. bottom electrode and bottom electrode lead-in wire is prepared:
Prepare film bottom electrode and bottom electrode lead-in wire; Or thick film bottom electrode and bottom electrode lead-in wire, as shown in Fig. 9 l.
J. back side flexible material is prepared:
Back side flexible material is prepared, as shown in fig. 9m at the substrate lower surface carrying out bottom electrode and bottom electrode lead-in wire.
K. remove upper screening glass, Fig. 9 n is left pseudosection.Fig. 9 o is elevation cross-sectional view.Make circuit lead, complete element manufacturing.
In conjunction with Figure 10, present embodiment is described, Figure 10 a and 10b is respectively the light-emitting diode display part left profile figure and principal section figure that do not contain back side flexible material layer.
The embodiment of the preparation method of the miniature flexible LED area array device that embodiment three, present embodiment are the high uniformity described in embodiment two: concrete grammar is:
A. the cleaning of luminescence chip and front protecting:
A) luminescence chip that the present invention uses is AlGaInP-LED epitaxial wafer, and be made up of photic zone, luminescent layer, reflector and substrate, the thickness of luminescence chip is at 200 μm ~ 1000 μm.
B) upper protective film material is the composite membrane that forms of silicon dioxide or silicon nitride or silicon dioxide and silicon nitride or metal or organic material or inorganic material or other thin-film material that can play a protective role.Diaphragm preparation method is electron beam evaporation or radio frequency sputtering or magnetron sputtering or sol-gal process or other film growth method.
B. the preparation of isolated groove is gone up:
A) on upper protective film, flexible region photoresist graph window is formed by photoetching process, that is upper isolated groove figure.
B) under the protection of photoresist, the upper isolated groove figure of diaphragm is obtained by dry etching or wet corrosion technique.Photoresist thickness is 0.2 μm-15 μm.
C) under the sheltering of diaphragm and photoresist, carry out wet etching or ICP etching to luminescence chip upper surface, etching depth be that photic zone, luminescent layer, reflector etching is saturating, and etches substrate to certain depth; The degree of depth of upper isolated groove is 100 ~ 300 μm.
C. the filling of isolated groove is gone up:
A) the flexible material of luminescence chip upper surface coating and pixel connecting material be polyimides or flexible-epoxy or dimethyl silicone polymer (PDMS) or other can apply the flexible organic material of film forming.Precuring mode is for being heating and curing or normal temperature cure.
B) flexible material of photic zone upper surface is removed by photoetching and wet corrosion technique.
C) remove photoresist, and carry out anticaustic with corrosive agent or specific solvent, make the formation concave shape of formed packing material upper surface.
D) solidification completely of flexible material is completed.
E) upper protective film is removed with wet etching or dry etching.
D. the preparation of Graphene transparent flexible top electrode and top electrode lead-in wire: adopt chemical vapour deposition technique or liquid phase electrochemical deposition technique or the aqueous dispersions spin coating technique of Graphene is combined with photoetching, mask or corrosion technology and prepare Flexible graphene film top electrode and top electrode goes between at the luminescence chip upper surface completing step C.
E. lenticule is prepared; The luminescence chip completing top electrode lead-in wire and the outside upper contact conductor of luminescence unit on luminescence unit applies one layer of polymeric colloid, and concrete thickness determines according to design and processes experiment; Ultra-violet curing or hot curing are carried out to polymeric colloid, obtains the polymeric layer with higher adhesion; The certain thickness photoresist of spin coating on polymer after hardening, after front baking, exposure, development, adopts hot melt to make photoresist lenticule; Adopt reactive ion etching to be transferred on aforesaid polymer by photoresist lenticule again, obtain polymer lenticules.Polymer lens material is polyimides or epoxy resin or SU-8 photoresist.
F. the front of luminescence chip is fixed: adhesive material is photoresist or heat-curable glue or ultra-violet curing glue or other adhesives.The material of upper screening glass is quartzy or the ceramic or aluminium of silicon or glass or titanium or other inorganic material or organic material or metal material.
G. the lower surface of luminescence chip is thinning: adopt mechanical reduction and polishing or chemical reduction and polishing or machinery to combine with chemical method and carry out thinning and polishing to the lower surface of luminescence chip, the luminescence chip after thinning is 20 ~ 300 μm.
H. the pixel segmentation of luminescence chip:
A) under, Protective coatings is the composite membrane that forms of silicon dioxide or silicon nitride or silicon dioxide and silicon nitride or metal or organic material or inorganic material or other thin-film material that can play a protective role.Diaphragm preparation method is electron beam evaporation or radio frequency sputtering or magnetron sputtering or sol-gal process or other film growth method.
B) on lower diaphragm, flexible region photoresist graph window is formed by double-sided alignment photoetching process.
C) under the protection of photoresist, the graph window of lower diaphragm is obtained by dry etching or wet corrosion technique.Photoresist thickness is 0.2 μm-15 μm.
D) under the sheltering of diaphragm and photoresist, wet etching or ICP etching are carried out to luminescence chip upper surface, realize the pixel segmentation of luminescence chip.
E) lower diaphragm is removed with wet etching or dry etching.
I. prepare bottom electrode and bottom electrode lead-in wire: prepare film bottom electrode and bottom electrode lead-in wire by lift-off technique or plated film-photoetching-etching process, or prepare thick film bottom electrode and bottom electrode lead-in wire by techniques such as thick resist lithography, evaporation and electroforming thickenings.
The material of described bottom electrode and bottom electrode lead-in wire is Cr/Au or Ti/Pt/Au or Ti/Mo/Au or AuGeNi/Au or Al or Cu, or the composite membrane be made up of Cr/Au or Ti/Pt/Au or Ti/Mo/Au or AuGeNi/Au and Cu or Au.Film vapor deposition mode is electron beam evaporation or radio frequency sputtering or magnetron sputtering.
Prepare thick film bottom electrode and bottom electrode lead-in wire specifically have two kinds of methods: one, first carry out thick resist lithography and obtain the thick photoresist figure contrary with bottom electrode figure, evaporation lower electrode film again, bottom electrode selects Au or AuGeNi/Au or Ti/Pt/Au or Ti/Mo/Au or other and substrate to have the metal of good ohmic contact performance.After stripping, carry out electroforming, electrode is thickeied.The thin-film material of electroforming material and evaporation is identical or different.
Two, thick film bottom electrode and bottom electrode lead-in wire can also adopt following technique: first evaporation lower electrode film, bottom electrode selects Au or AuGeNi/Au or Ti/Pt/Au or Ti/Mo/Au or other and substrate to have the metal of good ohmic contact performance.Then carry out thick resist lithography and obtain the thick photoresist figure contrary with bottom electrode figure.Electroforming makes electrode thicken, and the thin-film material of electroforming material and evaporation is identical or different.Finally, remove thick photoresist and obtain thick membrane electrode.
J. back side flexible material is prepared: at the flexible material coating of the substrate lower surface rotary coating or spraying desired thickness of preparing bottom electrode and bottom electrode lead-in wire, be then cured, form back side flexible material layer.The material of back side flexible material layer be polyimides or flexible-epoxy or dimethyl silicone polymer (PDMS) or other can apply the flexible organic material of film forming.
K. remove upper screening glass, screening glass and bonding agent wet method or dry method are removed.
Present invention employs inorganic active illuminating diode chip for backlight unit and prepare flexible micro-display device, structure simply, firm, response is fast; And it is low and limit the problem of light output intensity to overcome the short and drive current of organic light-emitting device life period, thus provide a kind of self-luminous, volume little, low in energy consumption and based on the flexible flexible micro-display device and preparation method thereof of high brightness luminescent chip.This flexible flexible micro-display device can be applied to multiple field such as medicine equipment, micro sensor devices manufacture.
Claims (10)
1. the miniature flexible LED area array device of high uniformity, comprises photic zone (1), luminescent layer (2), reflector (3), substrate (4), top electrode (5), top electrode lead-in wire (9), bottom electrode (6), bottom electrode lead-in wire (10), flexible region (7) and lenticule (8); It is characterized in that, described reflector (3) is followed successively by luminescent layer (2), photic zone (1), top electrode (5) and lenticule (8) above, is substrate (4) below reflector (3); Described photic zone (1), luminescent layer (2), reflector (3) and substrate (4) composition LED luminescence unit, multiple LED luminescence unit is evenly arranged composition array of light emitting cells; Be flexible region (7) between described multiple LED luminescence unit, flexible region (7) makes each luminescence unit connect successively and makes LED array of light emitting cells flexible; The upper surface of described photic zone (1) is placed with top electrode (5), the upper surface of flexible region (7) is placed with top electrode lead-in wire (9), the top electrode (5) being in same a line go between with top electrode (9) be connected successively, have bottom electrode (6) in the underside view of part of substrate (4), the bottom electrode (6) being in same row is connected by bottom electrode lead-in wire (10); The upper row antarafacial in orientation that goes between that the lower lead-in wire that described bottom electrode (6) and bottom electrode lead-in wire (10) form arranges and top electrode (5) goes between with top electrode (9) forms is vertical, and the material of described top electrode (5) and top electrode lead-in wire (9) is Graphene;
The preparation method of the miniature flexible LED area array device of high uniformity, the method is realized by following steps:
The cleaning of step one, luminescence chip and front protecting; First, select luminescence chip, described luminescence chip is made up of photic zone, luminescent layer, reflector and substrate; Then, luminescence chip is cleaned, and prepare one deck upper protective film at the euphotic upper surface of described luminescence chip;
The preparation of step 2, upper isolated groove; By photoetching and corrosion upper protective film, expose the graph window of flexible region, namely go up isolated groove figure; Under the sheltering of upper protective film and photoresist, wet etching or ICP etching are carried out to luminescence chip upper surface, remove the luminescence chip material of flexible region, form the upper isolated groove of certain depth;
The filling of step 3, upper isolated groove;
Step 3 one, on preparation has the upper surface coating flexible material of luminescence chip of isolated groove, and carry out precuring;
Step 3 two, removed the flexible material of photic zone upper surface by photoetching and etching process, and by the formation concave shape of removing photoresist and corrosion makes formed packing material upper surface again;
Step 3 three, complete the solidification completely of flexible material, remove upper protective film;
Step 4, the upper surface of luminescence chip carry out Graphene transparent flexible top electrode and top electrode lead-in wire preparation;
Step 5, prepare lenticule (8); The luminescence chip completing top electrode and top electrode lead-in wire is prepared the polymeric layer of high adhesion, obtains polymer lenticules by hot melt; The polymeric layer material of described high adhesion is polyimides, epoxy resin or SU-8 photoresist;
The front of step 6, luminescence chip is fixed; Bonding agent is adopted to be fixed on upper screening glass by the upper surface of luminescence chip;
The thinning back side of step 7, luminescence chip; Carry out thinning to the lower surface of the substrate of luminescence chip, then carry out polishing;
The pixel segmentation of step 8, luminescence chip, obtains multiple LED luminescence unit;
Step Aug. 1st, complete polishing luminescence chip substrate lower surface preparation under diaphragm;
Step 8 two, by double-sided alignment photoetching and corrosion protection film, expose flexible region window;
Step 8 three, under the sheltering of lower diaphragm and photoresist, the lower surface of luminescence chip to be etched, remove the luminescence chip material of flexible region completely, realize the pixel segmentation of luminescence chip, obtain multiple LED luminescence unit;
Step 8 four, the lower diaphragm of removal;
Step 9, prepare bottom electrode and bottom electrode lead-in wire, prepare at the back side of luminescence chip bottom electrode and bottom electrode lead-in wire, screening glass in removals, making circuit lead, complete the making of LED component.
2. the miniature flexible LED area array device of high uniformity according to claim 1, it is characterized in that, also comprise the flexible region (7) of substrate (4) lower surface being positioned at LED luminescence unit, i.e. back side flexible material layer, described back side flexible material layer covers bottom electrode (6) and bottom electrode lead-in wire (10).
3. the miniature flexible LED area array device of high uniformity according to claim 1, is characterized in that, the shape of described LED luminescence unit is square, rectangle or circle; Described top electrode (5) shape is three-back-shaped, annular, wall scroll shape or two bar shaped; The shape of bottom electrode (6) is rectangle, circle, wall scroll shape or two bar shaped.
4. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 1, it is characterized in that, the method is realized by following steps:
The cleaning of step one, luminescence chip and front protecting; First, select luminescence chip, described luminescence chip is made up of photic zone, luminescent layer, reflector and substrate; Then, luminescence chip is cleaned, and prepare one deck upper protective film at the euphotic upper surface of described luminescence chip;
The preparation of step 2, upper isolated groove; By photoetching and corrosion upper protective film, expose the graph window of flexible region, namely go up isolated groove figure; Under the sheltering of upper protective film and photoresist, wet etching or ICP etching are carried out to luminescence chip upper surface, remove the luminescence chip material of flexible region, form the upper isolated groove of certain depth;
The filling of step 3, upper isolated groove;
Step 3 one, on preparation has the upper surface coating flexible material of luminescence chip of isolated groove, and carry out precuring;
Step 3 two, removed the flexible material of photic zone upper surface by photoetching and etching process, and by the formation concave shape of removing photoresist and corrosion makes formed packing material upper surface again;
Step 3 three, complete the solidification completely of flexible material, remove upper protective film;
Step 4, the upper surface of luminescence chip carry out Graphene transparent flexible top electrode and top electrode lead-in wire preparation;
Step 5, prepare lenticule (8); The luminescence chip completing top electrode and top electrode lead-in wire is prepared the polymeric layer of high adhesion, and obtain polymer lenticules by hot melt, the polymeric layer material of described high adhesion is polyimides, epoxy resin or SU-8 photoresist;
The front of step 6, luminescence chip is fixed; Bonding agent is adopted to be fixed on upper screening glass by the upper surface of luminescence chip;
The thinning back side of step 7, luminescence chip; Carry out thinning to the lower surface of the substrate of luminescence chip, then carry out polishing;
The pixel segmentation of step 8, luminescence chip, obtains multiple LED luminescence unit;
Step Aug. 1st, complete polishing luminescence chip substrate lower surface preparation under diaphragm;
Step 8 two, by double-sided alignment photoetching and corrosion protection film, expose flexible region window;
Step 8 three, under the sheltering of lower diaphragm and photoresist, the lower surface of luminescence chip to be etched, remove the luminescence chip material of flexible region completely, realize the pixel segmentation of luminescence chip, obtain multiple LED luminescence unit;
Step 8 four, the lower diaphragm of removal;
Step 9, prepare bottom electrode and bottom electrode lead-in wire, prepare at the back side of luminescence chip bottom electrode and bottom electrode lead-in wire, screening glass in removals, making circuit lead, complete the making of LED component.
5. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 4, it is characterized in that, also comprise step 10, preparation back side flexible material layer: be specially: preparing the lower surface rotary coating of substrate or the flexible material coating of spraying desired thickness of bottom electrode (6) and bottom electrode lead-in wire (10), then be cured, form back side flexible material layer.
6. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 4, it is characterized in that, in step 4, prepare Graphene transparent upper electrode and top electrode lead-in wire by adopting chemical vapour deposition technique or Content by Electrodeposition in Liquid Phase at the upper surface of luminescence chip.
7. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 4, it is characterized in that, the material of described bottom electrode (6), bottom electrode lead-in wire (10) is any one in Cr/Au, Ti/Pt/Au, Ti/Mo/Au, AuGeNi/Au, Al or Cu, or is the composite membrane be made up of any one in Cr/Au, Ti/Pt/Au, Ti/Mo/Au or AuGeNi/Au and Cu; Or be the composite membrane be made up of any one in Cr/Au, Ti/Pt/Au, Ti/Mo/Au or AuGeNi/Au and Au, or be graphene film.
8. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 4, it is characterized in that, in step 9, prepare film bottom electrode and bottom electrode lead-in wire by lift-off technique or plated film, photoetching and etching process, or prepare thick film bottom electrode and bottom electrode lead-in wire by the technique that thick resist lithography, evaporation and electroforming thicken.
9. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 8, is characterized in that, the preparation process of described thick film bottom electrode (6) and bottom electrode lead-in wire (10) has two kinds of methods:
The first: first carry out thick resist lithography and obtain the thick photoresist figure contrary with bottom electrode figure, then evaporation lower electrode film, after stripping, carry out electroforming, electrode is thickeied; Obtain thick film bottom electrode (6) and bottom electrode lead-in wire (10), the thin-film material of described electroforming material and evaporation is identical or different;
The second: the evaporation mode evaporation lower electrode film first adopting electron beam evaporation or radio frequency sputtering or magnetron sputtering, then carries out thick resist lithography and obtains the thick photoresist figure contrary with bottom electrode figure; Electroforming makes electrode thicken, and the thin-film material of electroforming material and evaporation is identical or different; Finally, remove thick photoresist and obtain thick film bottom electrode (6) and bottom electrode lead-in wire (10).
10. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 4, it is characterized in that, the detailed process preparing lenticule (8) described in step 5 is: on the LED luminescence unit completing top electrode (5) and top electrode lead-in wire (9), apply one layer of polymeric colloid layer, and the thickness of described colloid layer determines according to design and processes experiment; Carry out ultra-violet curing or hot curing to polymeric colloid layer, obtain the polymeric layer with higher adhesion, the polymeric layer material of described higher adhesion is polyimides, epoxy resin or SU-8 photoresist; On polymer after hardening, glue is carved in spin coating, after front baking, exposure, development, adopts hot melt to make photoresist lenticule; Adopt reactive ion etching to be transferred on described polymeric layer by photoresist lenticule again, obtain polymer lenticules (8).
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| CN105869574B (en) * | 2016-06-07 | 2017-03-29 | 京东方科技集团股份有限公司 | A kind of pixel-driving circuit and its driving method, array base palte and display device |
| CN107808601B (en) * | 2016-08-30 | 2020-08-21 | 海迪科（南通）光电科技有限公司 | Micro light-emitting diode display structure and manufacturing method |
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| CN107331762B (en) * | 2017-06-22 | 2019-11-12 | 维信诺科技股份有限公司 | Display device and preparation method thereof |
| CN109244252B (en) * | 2017-07-11 | 2020-11-10 | Tcl科技集团股份有限公司 | QLED device and preparation method thereof |
| CN108305919A (en) * | 2018-01-26 | 2018-07-20 | 平潭中科半导体技术联合研究中心 | A kind of flexibility light-emitting film and preparation method thereof |
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