CN107785391A - A kind of LED display structure - Google Patents
A kind of LED display structure Download PDFInfo
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- CN107785391A CN107785391A CN201610759284.1A CN201610759284A CN107785391A CN 107785391 A CN107785391 A CN 107785391A CN 201610759284 A CN201610759284 A CN 201610759284A CN 107785391 A CN107785391 A CN 107785391A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
Abstract
The present invention relates to a kind of LED display structure, the display includes the display unit of one or more quantity, and each display unit is formed by several pixels；It is characterized in that：Described each pixel includes the sub-pixel of three or more than three, an etched gap between adjacent sub-pixel be present, and the sub-pixel of same row is connected on same flexible electrode A in a unit, sub-pixel in one unit with a line is connected on same flexible electrode B, and realizes Drive of row and column.The advantage of the invention is that：The Flexible light-emitting diodes display of the present invention has flexible feature, and it is advantageous to make displays are thin without backlight, simultaneously, it is made up of the inorganic semiconductor epitaxial wafer of stable performance again, service life length, and is not in the uneven situation of display；And can largely simplify production procedure, reduce production cost.
Description
Technical field
The present invention relates to a kind of display device structure, more particularly to a kind of LED display structure.
Background technology
Display has a wide range of applications in current consumption electronic product, especially computer display, mobile phone display screen,
Intelligent wearable device display screen etc..With scientific and technological progress, CRT Displays originally are substantially by frivolous liquid crystal
Display (LCD) is substituted, and is developed towards lighter, thinner direction.And LCD itself does not light, necessity has backlight just may be used
Normally to show, limit LCD can not do it is sufficiently thin.In recent years, organic light emitting diode display (OLED) rises abruptly rapidly
Rise, by self-luminous, the advantage without backlight, what can be done is thinner, is applied extensively by some major companies in mobile phone, intelligence for it
In the equipment such as wrist-watch.
And OLED also has the shortcomings that it is difficult to overcome, organic material is in itself and unstable, causes the OLED display life-span difficult
To be compared favourably with inorganic semiconductor material.Moreover, oled light declines more substantially, long-term work can cause display different pixels
Luminous efficiency difference is larger, causes display to show uneven.
The advantages that due to third generation semiconductor high-breakdown-voltage, big thermal conductivity, strong capability of resistance to radiation, high response frequency,
Critical role is occupied in the fields such as white-light illuminating, high-power display device, ultraviolet disinfection.In addition, flexible display with its is thin, light,
The characteristics of soft, receives more and more attention and favors, if can be by third generation semiconductor and flexible display technologies connected applications extremely
Display industry, inherently turn into display industry most one of development trend of competitiveness.
The content of the invention
The technical problem to be solved in the present invention is to provide one kind can simplify production procedure, reduces production cost and performance is good
Flexible light-emitting diodes display device structure, also provide it is a kind of make the display method.
In order to solve the above technical problems, the technical scheme is that：LED display structure, the display bag
The display unit of one or more quantity is included, each display unit is formed by several pixels；The pixel by iii-v or
Group II-VI semiconductor material is made, and described each pixel includes the sub-pixel of three or more than three, adjacent sub-pixel
Between an etched gap be present；Between the um of 200nm ~ 500, the basic structure of sub-pixel includes the diameter of the sub-pixel
Color emission layer, n type semiconductor layer, active light emitting area, p type semiconductor layer, flexible P electrode and the flexible base board of setting are stacked gradually,
Also include the flexible N electrode contacted with n type semiconductor layer, limit stacking direction as both perpendicular to plane where the row, column
Direction, the sub-pixel is along stacking direction from the lateral color emission layer side light extraction in active light emitting area.
The sub-pixel of same row is connected in same electrode A in a described display unit, limits electrode A as flexibility
One kind in N electrode or flexible P electrode, an interior sub-pixel with a line of unit are connected in same electrode B, limit electrode
B is the another kind in flexible N electrode or flexible P electrode, and realizes Drive of row and column.
The diameter of the sub-pixel is between the um of 200nm ~ 100.
The diameter of the sub-pixel is between the um of 1 um ~ 100.
The thickness of the p type semiconductor layer is the nm of 50 nm~1000, the thickness of active light emitting area
Spend for the nm of 10 nm~200, the thickness of n type semiconductor layer is the um of 50 nm~10, nm~10 of thickness 10 of cushion
um。
The flexible N electrode is between n type semiconductor layer and color emission layer.
The sub-pixel can include auxiliary layer with optimum choice, and the auxiliary layer comprises at least electronic barrier layer, hole is noted
Enter one kind in layer or Ohmic contact enhancement layer, wherein, electronic barrier layer be arranged on active light emitting area and p type semiconductor layer it
Between, hole injection layer is arranged between p type semiconductor layer and flexible P electrode, Ohmic contact enhancement layer be arranged on flexible P electrode with
Between p type semiconductor layer.
Etching between flexible P electrode and flexible base board in the sub-pixel or in each pixel between adjacent sub-pixel
Reflecting layer can be set in gap
The advantage of the invention is that：
The pixel of the light emitting diode indicator display unit of the present invention is made up of three or more than three sub-pixels, different times
Pixel can send the light of different colours, and the light that different colours are sent by the sub-pixel in same pixel synthesizes achievable full color
It is luminous, for comparing the same LCD with sub-pixel, its without backlight, be advantageous to make displays are thin, meanwhile, it is again
It is made up of the inorganic semiconductor epitaxial wafer of stable performance, not OLED organic semiconducting materials are made, service life length, and not
Occur and show uneven situation；
Same row sub-pixel in the present invention in same unit uses same flexible P electrode, in the sub-pixel of same a line
A public flexible N electrode, and production procedure can largely be simplified by Drive of row and column, the structure, reduction is produced into
This.
Brief description of the drawings
Fig. 1 is the display unit embodiment partial structural diagram of Flexible light-emitting diodes display of the present invention.
Fig. 2 is along line A-A sectional view in Fig. 1.
Fig. 3 is along line B-B sectional view in Fig. 1.
Fig. 4 is the epitaxial slice structure schematic diagram of the embodiment of the present invention.
Fig. 5 is the epitaxial wafer pre-etching of the embodiment of the present invention into large-size units schematic diagram.
Fig. 6 is along line C-C sectional view in Fig. 5.
Fig. 7 is that flexible P electrode schematic diagram is made in large-size units in the embodiment of the present invention.
Fig. 8 is that large-size units are transferred to flexible base board and peel off cushion and substrate condition figure in the embodiment of the present invention.
Fig. 9 is the etching procedure schematic diagram of the embodiment of the present invention.
Figure 10 is along line D-D sectional view in Fig. 9.
Figure 11 is along E-E line sectional views in Fig. 9.
Figure 12 is the flexible N electrode of making and color emission layer schematic diagram.
Embodiment
The micro-led display of the present invention includes the display unit of one or more quantity, each display unit
Formed by several pixels, and each pixel include the sub-pixel of three or more than three, it is of the invention in pixel, secondary picture
Element is made up of iii-v or Group II-VI semiconductor material.
Fig. 1 shows the same unit partial top view containing 3*4 sub-pixel, has one between adjacent sub-pixel
Etched gap, and the sub-pixel 11 of same row is connected in same electrode A in a unit, limits electrode A as flexible N electrode
Or one kind in flexible P electrode, an interior sub-pixel with a line of unit are connected in same electrode B, limit electrode B to be soft
Another kind in property N electrode or flexible P electrode, and using flexible P electrode as scanning electrode address, flexible N electrode is as data
Driving electrodes, and then realize Drive of row and column.In the present embodiment, electrode A is flexible N electrode 2, and electrode B is flexible P electrode 6, three
Sub-pixel 11 forms a pixel 13.In the present invention, the diameter of sub-pixel is between the um of 200nm ~ 500, and preferably sub-pixel is straight
Footpath is between the um of 200 nm ~ 100, between the um of most preferably 1 um ~ 100.Etching gap is 20 nm-100 um.
In the present embodiment, as shown in Figure 2,3, the basic structure of sub-pixel 1 includes stacking gradually the color emission layer 1 of setting, soft
Property N electrode 2, n type semiconductor layer 3, active light emitting area 4, p type semiconductor layer 5, flexible P electrode 6 and flexible base board 7, limit heap
Folded direction is the direction both perpendicular to plane where row, column, and sub-pixel is along stacking direction from 4 lateral color emission layer of active light emitting area
1 side light extraction.
It will be understood by those skilled in the art that what the structure of sub-pixel 1 here was merely exemplary, it is not limitation,
It can also include auxiliary layer in addition to basic structure, and auxiliary layer connects including at least electronic barrier layer, hole injection layer or ohm
One kind in enhancement layer is touched, wherein, electronic barrier layer is arranged between active light emitting area 4 and p type semiconductor layer 5, hole injection
Layer is arranged between p type semiconductor layer 5 and flexible P electrode 6, and Ohmic contact enhancement layer is arranged on flexible P electrode 6 and partly led with p-type
Between body layer 5.
In addition, in order to increase amount of light, can be between the flexible P electrode in each sub-pixel 11 and flexible base board, Huo Zhexiang
Reflecting layer can be set in etched gap between adjacent sub-pixel 11, to be emitted after the reflection of the light in other directions, here not
Repeat again.
As the present invention more specifically embodiment：, can be with least two pictures in each pixel in same display unit
The elemental area or sub-pixel scheme of colour of element are different, it is of course also possible to the pixel faces in each pixel in same display unit
Product or sub-pixel scheme of colour are identical.Similarly, in each sub-pixel in same pixel, at least two sub-pixels can be selected
Relative area or sub-pixel are different with chromatograph, certainly, relative area in each sub-pixel or sub-pixel color matching in same pixel
Layer can also be identical.It is not detailed herein.
The preparation method of display unit is as follows in the present embodiment：
Step S1：As shown in figure 4, from the epitaxial wafer of appropriate size, epitaxial wafer has the p-type for stacking gradually setting from top to bottom
Semiconductor layer 5, active light emitting area 4, n type semiconductor layer 3, cushion 8 and substrate 9；
In the present embodiment, p type semiconductor layer 5 is the Al of Mg dopingx1Ga1-x1N, wherein 0<x1<1, wherein carrier concentration be 1 ×
10 17~1 × 1021Between, thickness is the nm of 50 nm~1000.Active light emitting area 4 is Alx2Ga1-x2N/Aly2Ga1-y2N volumes
Sub- trap, periodicity are 2~10, the nm of the nm of gross thickness 10~200, wherein 0<x2<1,0<y2<1, x2≠y2.N type semiconductor layer 3 is
The Al of Si dopingx3Ga1-x3N, wherein 0<x3<1, wherein carrier concentration is 1 × 1018~1 × 1022Between, thickness 50
The um of nm~10.Cushion 8 is Alx4Ga1-x4N, wherein 0<x4<1, thickness is the um of 10 nm~10.Substrate 9 is Sapphire Substrate.
Step S2：Pre-etching, as shown in Figure 5,6, pre-etching is carried out to epitaxial wafer, limited positioned at epitaxial wafer institute planar
Orthogonal both direction is line direction and column direction, and multiple tracks line direction is etched on the line direction and column direction of epitaxial wafer
With column direction etched gap；
Pre-etching depth extends to from the lateral substrate side direction of p type semiconductor layer 5 and penetrates n type semiconductor layer 3 less, and then in extension
Some large-size units 14 in array distribution are formed on piece；The diameter of large-size units 14 is with the decision of substrate desquamation technique, scope
Generally 10 um-5 mm.
Step S3：As shown in fig. 7, make flexible P electrode 6, Mei Ge great in the upper surface of each large-size units 14 of epitaxial wafer
If being made on dimension cells 14 has the flexible P electrode 6 that arterial highway is parallel to each other, the bearing of trend of flexible P electrode 6 is line direction；
The electrode cycle is 200 nm-500 um, that is, corresponds to the diameter with later stage sub-pixel.
Step S4：As shown in figure 8, each large-size units 14 are transferred on same flexible base board 7, and cause flexible P electricity
The side of pole 6 contacts with flexible base board 7；The cushion 8 of epitaxial wafer and substrate 9 are peeled off again so that the n type semiconductor layer 3 of epitaxial wafer
Expose；
Step S5：As shown in Fig. 9 ~ 11, the etching of multiple tracks line direction is etched on the line direction and column direction of each large-size units
Gap 10a and column direction etched gap 10b, and then the secondary picture that some rectangular arrays are distributed is formed in each large-size units 14
Element 11；
In this step, line direction etched gap 10a at least penetrates N-type from the lateral side of p type semiconductor layer 5 extension of n type semiconductor layer 3
Semiconductor layer 3, and line direction etched gap 10a is respectively positioned between adjacent flexible P electrode 6, that is, avoids the position of flexible P electrode 6；
Column direction etching gap 10b depth penetrates n type semiconductor layer from the lateral side of p type semiconductor layer 5 extension of n type semiconductor layer 3
3 do not penetrate flexible P electrode 6.So that public one flexible P electrode 6 of sub-pixel with a line；
Step S6：Flexible N electrode is made, as shown in figure 12, bearing of trend of the column direction as flexible N electrode 2 is selected, in extension
Flexible N electrode 2 is made on the n type semiconductor layer 3 of piece sub-pixel, and causes the flexible N electricity of public one of each sub-pixel of same row
Pole 2；
Step S7：Sub-pixel color emission layer 1 is made, all sub-pixels are first divided into several pixels, each pixel includes three
Or more than three sub-pixels；Further according to sub-pixel toning scheme identical or different color is made in the sub-pixel in each pixel
Color emission layer 1, the color emission layer 1 are located in flexible N electrode 2 on the surface away from the side of active light emitting area 4；
Step S8：A display unit is obtained, the display unit has several pixels, and each pixel includes three or three
Sub-pixel above, and each sub-pixel then has flexible N electrode 2, flexible P electrode 6 and flexible base board 7.
Following table is the parameter comparison of light emitting diode of the present invention and traditional OLED, LCD：
。
Conclusion：Display unit used by the light emitting diode indicator of the present invention, compares LCD display, its color is also
Originality is high, without backlight, is advantageous to make displays are thin；And compared with OLED, it is made, is made of inorganic semiconductor epitaxial wafer
With long lifespan, and manufacture craft is simple.
Claims (8)
1. a kind of LED display structure, the display includes the display unit of one or more quantity, each display
Unit is formed by several pixels；It is characterized in that：The pixel is made up of iii-v or Group II-VI semiconductor material, institute
The each pixel stated includes the sub-pixel of three or more than three, an etched gap be present between adjacent sub-pixel；Institute
The diameter of sub-pixel is stated between the um of 200nm ~ 500, the basic structure of sub-pixel includes color emission layer, the N-type for stacking gradually setting
Semiconductor layer, active light emitting area, p type semiconductor layer, flexible P electrode and flexible base board, in addition to contacted with n type semiconductor layer
Flexible N electrode, stacking direction is limited as the direction both perpendicular to plane where the row, column, sub-pixel edge stacking side
To from the lateral color emission layer side light extraction in active light emitting area.
2. according to the LED display structure described in claim 1, it is characterised in that：It is same in a described display unit
The sub-pixel of one row is connected in same electrode A, limits electrode A as one kind in flexible N electrode or flexible P electrode, one
Sub-pixel in unit with a line is connected in same electrode B, limits electrode B to be another in flexible N electrode or flexible P electrode
One kind, and realize Drive of row and column.
3. LED display structure according to claim 1, it is characterised in that：The diameter of the sub-pixel exists
Between the um of 200nm ~ 100.
4. LED display structure according to claim 1, it is characterised in that：The diameter of the sub-pixel is 1
Between the um of um ~ 100.
5. LED display structure according to claim 1, it is characterised in that：The thickness of the p type semiconductor layer
Spend for the nm of 50 nm~1000, the thickness of active light emitting area is the nm of 10 nm~200, and the thickness of n type semiconductor layer is 50 nm
The um of~10 um, the nm of thickness 10 of cushion~10.
6. LED display structure according to claim 1, it is characterised in that：The flexible N electrode is located at N-type
Between semiconductor layer and color emission layer.
7. LED display structure according to claim 1, it is characterised in that：The sub-pixel can also optimize
Selection includes auxiliary layer, and the auxiliary layer comprises at least one kind in electronic barrier layer, hole injection layer or Ohmic contact enhancement layer,
Wherein, electronic barrier layer is arranged between active light emitting area and p type semiconductor layer, and hole injection layer is arranged on p type semiconductor layer
Between flexible P electrode, Ohmic contact enhancement layer is arranged between flexible P electrode and p type semiconductor layer.
8. LED display structure according to claim 1, it is characterised in that：Flexible P in the sub-pixel
Reflecting layer can be set in etched gap between electrode and flexible base board or in each pixel between adjacent sub-pixel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610759284.1A CN107785391A (en) | 2016-08-30 | 2016-08-30 | A kind of LED display structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610759284.1A CN107785391A (en) | 2016-08-30 | 2016-08-30 | A kind of LED display structure |
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| Publication Number | Publication Date |
|---|---|
| CN107785391A true CN107785391A (en) | 2018-03-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610759284.1A Pending CN107785391A (en) | 2016-08-30 | 2016-08-30 | A kind of LED display structure |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101324306A (en) * | 2007-06-15 | 2008-12-17 | 统宝光电股份有限公司 | Light-emitting diode arrays and methods of manufacture |
| CN103474425A (en) * | 2013-08-14 | 2013-12-25 | 中国科学院长春光学精密机械与物理研究所 | High-luminescence-uniformity miniaturized flexible LED area array device and preparation method thereof |
| CN104584110A (en) * | 2012-08-21 | 2015-04-29 | Lg电子株式会社 | Display device using semiconductor light emitting device and method of fabricating the same |
-
2016
- 2016-08-30 CN CN201610759284.1A patent/CN107785391A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101324306A (en) * | 2007-06-15 | 2008-12-17 | 统宝光电股份有限公司 | Light-emitting diode arrays and methods of manufacture |
| CN104584110A (en) * | 2012-08-21 | 2015-04-29 | Lg电子株式会社 | Display device using semiconductor light emitting device and method of fabricating the same |
| CN103474425A (en) * | 2013-08-14 | 2013-12-25 | 中国科学院长春光学精密机械与物理研究所 | High-luminescence-uniformity miniaturized flexible LED area array device and preparation method thereof |
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Application publication date: 20180309 |