CN103474330A - Diode product cleaning process - Google Patents
Diode product cleaning process Download PDFInfo
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- CN103474330A CN103474330A CN2013104438097A CN201310443809A CN103474330A CN 103474330 A CN103474330 A CN 103474330A CN 2013104438097 A CN2013104438097 A CN 2013104438097A CN 201310443809 A CN201310443809 A CN 201310443809A CN 103474330 A CN103474330 A CN 103474330A
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- Prior art keywords
- diode
- cleaning
- cleaning process
- product cleaning
- cleaning fluid
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a diode product cleaning process in the field of semiconductor manufacture. A PN junction of a semiconductor chip is subjected to acid corrosion, and then the surface of the semiconductor chip is further subjected to polishing treatment. The chip is cleaned by using diode cleaning fluid after being subjected to the polishing treatment, and the cleaning temperature is 60+/-5 DEG C. The diode cleaning fluid consists of, by weight, EDTA 2.9%, H2O2 24.3% and pure water 72.8%. The diode product cleaning process has the advantages of being reasonable, convenient to operate, free of environmental pollution, high in rate of good products and the like.
Description
Technical field:
The present invention relates to a kind of transistor cleaning of field of semiconductor manufacture, particularly a kind of diode product cleaning.
Background technology:
Semiconductor technology is the basis of modern microelectronics industry development, diode is the semiconductor electronic component of wherein commonly using, be widely used in the every field of electron trade, diode needs to carry out matting in production technology, in the diode production manufacturing, used a large amount of harmful materials as the cleaning fluid that cleans the diode surface, in traditional handicraft, with chromic acid and ammoniacal liquor, silicon chip is cleaned, the large and process control difficulty of environmental pollution, and the product yield level is not controlled.How in the situation that in order to be effective development is low-cost, free of contamination Novel washing liquid is purpose of the present invention.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of environmentally safe is provided, there is the diode product cleaning of the controlled effect of product yields.
The present invention is achieved by the following technical solutions:
A kind of diode product cleaning is characterized in that: semiconductor wafer after the acid corrosion PN junction, further polishing of surface, the wafer after polishing cleans with the diode cleaning fluid, cleaning temperature is 60 ℃ ± 5 ℃; Technique scheme is done to further restriction, and described diode cleaning fluid is comprised of following component by weight percentage: EDTA 2.9%, H
2o
224.3%, pure water 72.8%, and above-mentioned cleaning fluid can reach processing ease, environmentally safe and the controlled effect of product non-defective unit.
The present invention compared with prior art has following beneficial effect:
1. the technique reasonable operation is convenient;
2. environmentally safe;
3. the product yields is high.
Embodiment
Below in conjunction with specific embodiment, content of the present invention is further described:
The cleaning of conventional diode can need a kind of cleaning of better environmental protection to substitute to environment, for Wafer Cleaning being reached to desirable effect, and the cleaning fluid of the chemical composition of nonpollution environment, chromic acid has heavily contaminated to environment; The ammoniacal liquor volatility is very strong, and whole cleaning environment is difficult to control, and it is unfavorable that operating personnel are breathed.Through repeatedly preparing, testing, finally use the scheme of EATA+H2O2 can reach the effect of the cleaning of old technology.The SI table top is bright and clean, smooth through cleaning rear surface; The SIO2 layer of producing reaches the effect of protection PN junction.
Embodiment
Silicon wafer is after the acid corrosion PN junction, and to its further polishing of surface, one deck SIO grows
2layer, EADA is taken to 600g and add in large Plastic Drum, then add the 15L pure water, finally add 5kg(5L) hydrogen peroxide is mixed with diode cleaning fluid, in the diode matting, needs to be heated, and temperature is strict controlled in 60 ℃ ± 5 ℃.
Claims (2)
1. a diode product cleaning is characterized in that: semiconductor wafer after the acid corrosion PN junction, further polishing of surface, the wafer after polishing cleans with the diode cleaning fluid, cleaning temperature is 60 ℃ ± 5 ℃.
2. diode product cleaning according to claim 1, it is characterized in that: described diode cleaning fluid is comprised of following component by weight percentage: EDTA 2.9%, H
2o
224.3%, pure water 72.8%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104438097A CN103474330A (en) | 2013-09-26 | 2013-09-26 | Diode product cleaning process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104438097A CN103474330A (en) | 2013-09-26 | 2013-09-26 | Diode product cleaning process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103474330A true CN103474330A (en) | 2013-12-25 |
Family
ID=49799132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013104438097A Pending CN103474330A (en) | 2013-09-26 | 2013-09-26 | Diode product cleaning process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103474330A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1155055C (en) * | 1998-11-12 | 2004-06-23 | 夏普株式会社 | Novel detergent and cleaning method using it |
| CN1889237A (en) * | 2006-07-25 | 2007-01-03 | 河北工业大学 | Method for using special chelant for micro electronic |
| CN101399200A (en) * | 2008-11-06 | 2009-04-01 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon diode PN junction by same diffusion process of P and N paper sources |
| CN102427041A (en) * | 2011-11-21 | 2012-04-25 | 上海先进半导体制造股份有限公司 | Manufacturing method of schottky diode with high performance |
| US20120280212A1 (en) * | 2010-06-01 | 2012-11-08 | Palo Alto Research Center Incorporated | Semi-Polar Nitride-Based Light Emitting Structure and Method of Forming Same |
-
2013
- 2013-09-26 CN CN2013104438097A patent/CN103474330A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1155055C (en) * | 1998-11-12 | 2004-06-23 | 夏普株式会社 | Novel detergent and cleaning method using it |
| CN1889237A (en) * | 2006-07-25 | 2007-01-03 | 河北工业大学 | Method for using special chelant for micro electronic |
| CN101399200A (en) * | 2008-11-06 | 2009-04-01 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon diode PN junction by same diffusion process of P and N paper sources |
| US20120280212A1 (en) * | 2010-06-01 | 2012-11-08 | Palo Alto Research Center Incorporated | Semi-Polar Nitride-Based Light Emitting Structure and Method of Forming Same |
| CN102427041A (en) * | 2011-11-21 | 2012-04-25 | 上海先进半导体制造股份有限公司 | Manufacturing method of schottky diode with high performance |
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Legal Events
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20131225 |