CN103468346A - Silicon wafer cutting fluid and preparation method thereof - Google Patents

Silicon wafer cutting fluid and preparation method thereof Download PDF

Info

Publication number
CN103468346A
CN103468346A CN2013104128828A CN201310412882A CN103468346A CN 103468346 A CN103468346 A CN 103468346A CN 2013104128828 A CN2013104128828 A CN 2013104128828A CN 201310412882 A CN201310412882 A CN 201310412882A CN 103468346 A CN103468346 A CN 103468346A
Authority
CN
China
Prior art keywords
cutting fluid
silicon chip
chip cutting
formamide soln
formamide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2013104128828A
Other languages
Chinese (zh)
Other versions
CN103468346B (en
Inventor
王欣
周凯鸣
蔺雷亭
刘宏华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konca Solar Cell Co Ltd
Original Assignee
Konca Solar Cell Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konca Solar Cell Co Ltd filed Critical Konca Solar Cell Co Ltd
Priority to CN201310412882.8A priority Critical patent/CN103468346B/en
Publication of CN103468346A publication Critical patent/CN103468346A/en
Application granted granted Critical
Publication of CN103468346B publication Critical patent/CN103468346B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

The invention relates to silicon wafer cutting fluid and a preparation method thereof. The silicon wafer cutting fluid mainly comprises PEG (polyethylene glycol), surfactant, lubricant, a penetrant and a chelating agent, as well as formamide solution. The method comprises the steps of adding formamide solution into the silicon wafer cutting fluid, agitating, sealing and storing. A certain proportion of formamide solution is added in the silicon cutting fluid, so that the influence that the pH of the cutting fluid is reduced in storage process can be effectively reduced, the chemical property stability and uniformity of PEG can be guaranteed so as to provide guarantee for the cutting process.

Description

A kind of silicon chip cutting fluid and preparation method thereof
Technical field
The present invention relates to a kind of silicon chip cutting fluid and preparation method thereof.
Background technology
In photovoltaic solar silicon chip cutting process, silicon chip cutting fluid is as a kind of auxiliary material consumptive material product that must use in the silicon chip cutting process, and its consumption is expanded along with the growth of the silicon chip processing industry of photovoltaic solar industry and China.
By by cutting liquid and cutting sand (being generally silicon carbide) by a certain percentage interworking be mixed to get cutting and use mortar, and take cutting steel wire and silico briquette cut into to silicon chip as carrier drive mortar.Multi-wire saw is to utilize steel wire side by side will cut in moving process with mortar to bring in silico briquette cutting gap, by the barreling effect of abrasive material in mortar, silico briquette is processed into to the process of silicon chip.In the situation that slicing machine and personnel's stable operation, the cutting power that the quality of silicon chip processing and the stability in cutting process depend primarily on mortar.And the pH value is an important parameter of cutting liquid, the size of pH value directly has influence on the functional quality of cutting liquid, and the quality of cutting silicon wafer is had to great impact.
At present, the main component of cutting liquid is polyoxyethylene glycol (PEG), wherein usually can contain a certain proportion of tensio-active agent, lubricant, permeate agent and intercalating agent etc.At present multi-wire saw be take the PEG200(polyoxyethylene glycol with the main flow suspension of mortar) as main.Its molecular formula is HOCH 2(CH 2oCH 2) ncH 2oH.In PEG200, n=3, be generally the polymerization of 4 molecules, by ethylene oxide polymerization, formed.
The salient features of PEG has nontoxic, nonirritant, has good water-solublely, and with many organic components, good intermiscibility is arranged.There are good oilness, moisture retention, dispersiveness, caking agent, static inhibitor and softening agent etc. simultaneously.Mainly be applied to its oilness and dispersiveness in multi-wire saw.
The dispersiveness of silicon carbide in the multi-wire saw process in PEG, determining the stability of cutting process and the surface quality of silicon chip.By the research to PEG molecular structure and bond energy, show, it is the high degree of polarization molecule that strong polar link makes single PEG, and the H in the most easily lose in polar link-OH carries out combination with the polarity charge silicon carbide produced because of the surface coordination deficiency.The iso-electric point of silicon carbide is near pH=3.9, and the pH value of mortar is when different scopes, and the charge type of silicon carbide is different with electric density, thereby makes PEG difference occur to the saturated extent of adsorption of silicon carbide.
According to measuring and analyzing, the pH value of PEG can vary with temperature and change.In the PEG molecular structure, the most active is the hydrogen in hydroxyl.Along with the rising of temperature, interior can increasing, molecular brownian motion becomes acutely, thereby is very easy to lose the hydrogen in hydroxyl, and pH is reduced.
SiC size distribution in mortar is in PEG the time, and the zeta current potential of its SiC particle depends on the pH value, and the unsaturated key mapping of particle surface both can be filled by positive ion, also can be filled by negative ion.Generally, in PEG, the iso-electric point of SiC is near pH=3.9.When pH<3.9, the density of particle surface positive charge is greater than negative charge, and the zeta current potential is for just; As pH > 3.9 the time, the negative charge density of particle surface is greater than positive charge, and the zeta current potential is for negative.
The silicon chip cutting uses the pH value general control of mortar 5~8.In this scope, the zeta current potential of SiC particle is for negative, and the SiC particle surface is filled by negative charge, and whole particle performance is negative charge.Under the electrostatic interaction of negative charge, between the SiC particle, form electrostatic repulsion forces.This electrostatic repulsion forces can stop the mutual reunion between the SiC particle, thereby makes mutually to spread out between the SiC particle, prevents that mortar from agglomeration occurring in cutting process, avoids having influence on the silicon chip cutting quality.
In actual production process, find that the pH value of cutting liquid can slowly reduce along with the increase in storage time.After pH is reduced to certain numerical value, will produce great effect to chipping qualities.In the mortar cutting process, mortar is reunited, and line pressure is too high, filter bag can occur and stop up, and the normal cutting of impact is produced, and when serious, may cause whole cutter mortar to scrap, and has greatly increased production cost.
Therefore, in order to control the pH value of cutting liquid, stably manufactured, research finds to add a certain proportion of pH buffer solvent in cutting liquid, the pH value stabilization that can within effective service life, keep cutting liquid, improve the slow situation about reducing of pH value meeting of cutting liquid, thereby stop or greatly improved the pH value to fluctuate on the impact of process for processing quality.
Summary of the invention
The object of the present invention is to provide a kind of silicon chip cutting fluid and preparation method thereof.
Select and add certain organic bases chemical substance in cutting liquid, under the prerequisite that does not affect other every physical and chemical performances of cutting liquid, be added into a certain amount of such material, thereby make the pH value of cutting liquid keep stable.
For reaching this purpose, the present invention by the following technical solutions:
The invention provides a kind of silicon chip cutting fluid, described silicon chip cutting fluid mainly is comprised of PEG, tensio-active agent, lubricant, permeate agent and intercalating agent, in described silicon chip cutting fluid, contains formamide soln.
The chemical formula of methane amide is CH 3nO, be a kind of colourless oil liquid under normal temperature, has weakly alkaline, water absorbability.Its flash-point, burning-point is all higher, so safety performance is higher comparatively speaking, and relative density is 1.12, similar with the density of PEG.Its shortcoming is to have slight pungency and sensitization, therefore needs in actual use to wear chemical protection mirror and rubber gloves.
The present invention adds formamide soln in silicon chip cutting fluid, can increase the shelf-time of silicon chip cutting fluid, effectively reduces the impact of the pH value decline that causes silicon chip cutting fluid because the shelf-time is long.
Formamide soln of the present invention accounts for 1~20wt% of described silicon chip cutting fluid weight, for example can select 1.02~19.6wt%, 5~17.3wt%, and 7.2~14.8wt%, 10~12.7wt%, 11wt% etc., be preferably 5~12wt% or be preferably 8~15wt%.
The concentration of described formamide soln is 99.50%.
The present invention also provides a kind of method of silicon chip cutting fluid as mentioned above for preparing, and described method adds described formamide soln in silicon chip cutting fluid, is stirred rear hermetically storing.
Described churning time is 3~15min, for example can select 3.01~14.89min, 4~12.4min, and 5.5~11min, 8~10.4min, 9.2min etc., be preferably 5min.
A kind of preparation method of silicon chip cutting fluid, described method specifically comprises the following steps:
The silicon chip cutting fluid weight of 1) allocating is at first as required calculated the consumption of required formamide soln;
2) first silicon chip cutting fluid is stirred, in the process stirred, slowly added formamide soln, after waiting solution all to pour into, uniform stirring 5min;
3) deployed silicon chip cutting fluid canning sealing storage at once, avoid being exposed in air for a long time.
Because present used cutting liquid is all directly filling by production firm, if oneself modulated, tooling cost is higher, for the cutting liquid quality after processing, may affect to some extent, and suggestion can be by the directly generation processing of generation manufacturer of cutting liquid.
Before use, by the cutting liquid sampling and measuring, it is stable that the pH value keeps, and in normal range, can normally use.
With the prior art scheme, compare, the present invention has following beneficial effect:
Add a certain proportion of formamide soln in silicon chip cutting fluid, can effectively reduce the impact that the pH of cutting liquid in storage process descends, guarantee stable chemical performance, the homogeneous of PEG, for cutting process provides safeguard.
Embodiment
Further illustrate technical scheme of the present invention below by embodiment.
For the present invention is described better, be convenient to understand technical scheme of the present invention, typical but non-limiting embodiment of the present invention is as follows:
Embodiment 1
A kind of silicon chip cutting fluid, its by weight percentage ratio mainly by following raw material, formed:
Cutting liquid is commonly used raw material 99wt%
Formamide soln 1wt%.
Wherein, the concentration of described formamide soln is 99.50%.
Its preparation method is:
The silicon chip cutting fluid weight of 1) allocating is at first as required calculated the consumption of required formamide soln;
2) first silicon chip cutting fluid is stirred, in the process stirred, is slowly added formamide soln, wait complete soln all to pour into after uniform stirring 5min;
3) deployed silicon chip cutting fluid canning sealing storage at once, avoid being exposed in air for a long time.
Embodiment 2
A kind of silicon chip cutting fluid, its by weight percentage ratio mainly by following raw material, formed:
Cutting liquid is commonly used raw material 80wt%
Formamide soln 20wt%
Wherein, the concentration of described formamide soln is 99.50%.
Its preparation method is with embodiment 1, and difference is that churning time is 3min.
Embodiment 3
A kind of silicon chip cutting fluid, its by weight percentage ratio mainly by following raw material, formed:
Cutting liquid is commonly used raw material 95wt%
Formamide soln 5wt%
Wherein, the concentration of described formamide soln is 99.50%.
Its preparation method is with embodiment 1, and difference is that churning time is 15min.
Embodiment 4
A kind of silicon chip cutting fluid, its by weight percentage ratio mainly by following raw material, formed:
Cutting liquid is commonly used raw material 88wt%
Formamide soln 12wt%.
Wherein, the concentration of described formamide soln is 99.50%.
Its preparation method is with embodiment 1, and difference is that churning time is 10min.
Embodiment 5
A kind of silicon chip cutting fluid, its by weight percentage ratio mainly by following raw material, formed:
Cutting liquid is commonly used raw material 92wt%
Formamide soln 8wt%
Wherein, the concentration of described formamide soln is 99.50%.
Its preparation method is with embodiment 1, and difference is that churning time is 5min.
Embodiment 6
A kind of silicon chip cutting fluid, its by weight percentage ratio mainly by following raw material, formed:
Cutting liquid is commonly used raw material 85wt%
Formamide soln 15wt%
Wherein, the concentration of described formamide soln is 99.50%.
Its preparation method is with embodiment 1, and difference is that churning time is 8min.
Now, by optional one ton of the qualified supplied materials of certain manufacturer's cutting liquid, in this ton of cutting liquid, appoint and get 6 samples (each 1L deposits in sampling jug), be divided into 2 groups, 3 every group.Wherein 3 samples do not add any solvent, after pH value determination, seal up for safekeeping, are labeled as one group, sample.Remain 3 samples, by consumption of the present invention, sneak into formamide soln, the pH value of these 3 samples of rear measurement that stir, after measurement seal 3 samples up for safekeeping, is labeled as two groups, sample.
Every mistake is carried out the measurement of pH value to 2 groups of samples in one week, records related data, and table 1 is concrete experimental data:
The concrete experimental data table of table 1
Figure BDA0000380732940000061
Figure BDA0000380732940000071
Although the pH value that by above data, can it is evident that two groups of samples is the slow decreasing along with the growth of time all, add the pH value of second group of sample of methane amide, apparently higher than first group of sample.Under identical condition, through the pH of the times of 5 weeks first group of sample lower than 6; And the pH of second group meets Application standard also more than 6.Explanation under identical condition, but add the cutting liquid of formamide soln more long than the cutting liquid shelf-time do not added, produce adverse influence thereby effectively reduce the pH value that makes cutting liquid because the shelf-time the is long cutting to silicon chip that descends.
Applicant's statement, the person of ordinary skill in the field is on the basis of above-described embodiment, concrete content point value by above-described embodiment component, combined with the technical scheme of summary of the invention part, thereby the new numerical range produced, be also one of record scope of the present invention, the application, for making specification sheets simple and clear, is no longer enumerated these numerical ranges.
More than describe the preferred embodiment of the present invention in detail; but the present invention is not limited to the detail in above-mentioned embodiment, in technical conceive scope of the present invention; can carry out multiple simple variant to technical scheme of the present invention, these simple variant all belong to protection scope of the present invention.
It should be noted that in addition, each concrete technical characterictic described in above-mentioned embodiment, in reconcilable situation, can be combined by any suitable mode, for fear of unnecessary repetition, the present invention is to the explanation no longer separately of various possible array modes.
In addition, between various embodiment of the present invention, also can carry out arbitrary combination, as long as it is without prejudice to thought of the present invention, it should be considered as content disclosed in this invention equally.

Claims (8)

1. a silicon chip cutting fluid, described silicon chip cutting fluid mainly is comprised of PEG, tensio-active agent, lubricant, permeate agent and intercalating agent, it is characterized in that, also contains formamide soln in described silicon chip cutting fluid.
2. silicon chip cutting fluid as claimed in claim 1, is characterized in that, described formamide soln accounts for 1~20wt% of described silicon chip cutting fluid weight.
3. silicon chip cutting fluid as claimed in claim 1 or 2, is characterized in that, described formamide soln accounts for 5~12wt% of described silicon chip cutting fluid weight.
4. silicon chip cutting fluid as claimed in claim 1 or 2, is characterized in that, described formamide soln accounts for 8~15wt% of described silicon chip cutting fluid weight.
5. silicon chip cutting fluid as described as one of claim 1-4, is characterized in that, the concentration of described formamide soln is 99.50%.
6. the method prepared as silicon chip cutting fluid as described in one of claim 1-5, is characterized in that, described method adds formamide soln in silicon chip cutting fluid, is stirred rear hermetically storing.
7. method as claimed in claim 6, is characterized in that, described churning time is 3~15min, is preferably 5min.
8. method as described as claim 6 or 7, is characterized in that, said method comprising the steps of:
The silicon chip cutting fluid weight of 1) allocating is at first as required calculated the consumption of required formamide soln;
2) first silicon chip cutting fluid is stirred, in the process stirred, slowly added formamide soln, after waiting formamide soln all to pour into, stirred 5min;
3) deployed silicon chip cutting fluid canning sealing storage at once, avoid being exposed in air for a long time.
CN201310412882.8A 2013-09-11 2013-09-11 Silicon wafer cutting fluid and preparation method thereof Active CN103468346B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310412882.8A CN103468346B (en) 2013-09-11 2013-09-11 Silicon wafer cutting fluid and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310412882.8A CN103468346B (en) 2013-09-11 2013-09-11 Silicon wafer cutting fluid and preparation method thereof

Publications (2)

Publication Number Publication Date
CN103468346A true CN103468346A (en) 2013-12-25
CN103468346B CN103468346B (en) 2015-03-25

Family

ID=49793391

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310412882.8A Active CN103468346B (en) 2013-09-11 2013-09-11 Silicon wafer cutting fluid and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103468346B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1858169A (en) * 2006-05-31 2006-11-08 河北工业大学 Semiconductor silicon material water base cutting liquid
CN102851108A (en) * 2012-08-03 2013-01-02 江西赛维Ldk太阳能高科技有限公司 Diamond wire cutting fluid and preparation method thereof
CN103013638A (en) * 2011-09-20 2013-04-03 浙江瑞翌新材料科技有限公司 Water-soluble cooling liquid for fixed abrasive material line cutting, and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1858169A (en) * 2006-05-31 2006-11-08 河北工业大学 Semiconductor silicon material water base cutting liquid
CN103013638A (en) * 2011-09-20 2013-04-03 浙江瑞翌新材料科技有限公司 Water-soluble cooling liquid for fixed abrasive material line cutting, and preparation method thereof
CN102851108A (en) * 2012-08-03 2013-01-02 江西赛维Ldk太阳能高科技有限公司 Diamond wire cutting fluid and preparation method thereof

Also Published As

Publication number Publication date
CN103468346B (en) 2015-03-25

Similar Documents

Publication Publication Date Title
CN102618376B (en) Diamond abrasive wire cutting fluid for semiconductor precision sheet and preparation method of diamond abrasive wire cutting fluid
CN103525532B (en) A kind of carborundum line cutting liquid and preparation method thereof
CN110452762B (en) Multi-linear flaked silicon wafer cutting fluid and preparation method thereof
CN102311859B (en) Water soluble cutting fluid with high cleaning performance
TW201241171A (en) Water-soluble working fluid for fixed abrasive grain wire saw
KR20130001210A (en) Water-soluble cutting solution for fixed abrasive wire saw, method for cutting ingot using same, method for recycling the solution, and wafer produced by cutting
CN103952225A (en) Aqueous dissociating abrasive cutting fluid used for cutting solar silicon wafer and its preparation method
CN109135709A (en) A kind of viscosity reduction oil displacement agent and oil displacement system suitable for heavy crude reservoir
Heydari et al. Novel application of PEG/SDS interaction as a wettability modifier of hydrophobic carbonate surfaces
CN102952620B (en) Water-based cutting fluid of hard brittle material and preparation method of water-based cutting fluid
CN103468346B (en) Silicon wafer cutting fluid and preparation method thereof
CN103025486B (en) Water-soluble working fluid for fixed-abrasive wire saw
CN102321497B (en) Solar silicon slice cutting liquid
CN102408957B (en) High-property pulp-shaped fluorescent whitening agent and preparation method thereof
CN102660366A (en) Water-based synthetic cutting fluid lubricating agent, and preparation method and application thereof
US8597538B2 (en) Composition for improving dryness during wire sawing
CN102260582A (en) Water-based type wire-cutting liquid used for silicon chips
CN102773933B (en) Chemical processing method of wire-cutting recovery liquids
Zhang et al. Effects of inorganic salts and polymers on the foam performance of 1-tetradecyl-3-methylimidazolium bromide aqueous solution
KR101506027B1 (en) Water-soluble cutting fluid for fixed abrasive grain wire saw, cutting method using same, and recycling method therefor
Zhao et al. The influence of gas diffusion mechanisms on foam stability for foam forming of paper products
CN108659915A (en) Silicon chip cutting anti-settling agent and mortar cutting fluid
CN103053010A (en) Silicon wafer processing liquid and silicon wafer processing method
CN105969480B (en) For incisory environment-friendly type coolant liquid of hard brittle material and preparation method thereof and application method
CN111203150B (en) Nonionic surfactant and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant