CN103460119A - 反射式显示装置 - Google Patents

反射式显示装置 Download PDF

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CN103460119A
CN103460119A CN2012800178287A CN201280017828A CN103460119A CN 103460119 A CN103460119 A CN 103460119A CN 2012800178287 A CN2012800178287 A CN 2012800178287A CN 201280017828 A CN201280017828 A CN 201280017828A CN 103460119 A CN103460119 A CN 103460119A
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P·凯恩
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Abstract

一种制作用于反射式显示装置的控制部件的技术，其包括：形成电子切换装置的阵列；在所述电子切换装置的阵列之上形成限定受控表面形貌的绝缘体区域；以及通过保形沉积技术在绝缘体区域的图案化表面上形成反射的像素导体的基本上平面的阵列，每个像素导体是可经由电子切换装置的阵列中的相应的一个电子切换装置独立控制的，其中每个像素导体对于相对于像素导体的阵列的平面的给定入射角在相对于像素导体的阵列的平面的反射角的范围内表现出镜面反射。

Description

反射式显示装置
技术领域
像素化的(pixellated)反射式显示装置通过独立地控制从在显示介质后面的反射表面通过显示介质的各个像素区反射回的入射光的量而操作。
背景技术
为了即使在入射光表现出高度依赖方向的强度时也以相对大范围的观看角度实现良好的显示性能的目的，一些反射式显示装置包括在平坦的反射表面与显示介质之间的散射器(diffuser)。
已经认识到以其它方式实现同样的这种良好的显示性能的需求。本发明的一个目的是满足这种需求。
发明内容
由此提供了一种制作用于反射式显示装置的控制部件的方法，该方法包括：形成电子切换装置的阵列；在所述电子切换装置的阵列之上形成限定受控表面形貌(controlled surface topography)的绝缘体区域；以及通过保形(conformal)沉积技术在绝缘体区域的图案化表面上形成反射的像素导体的基本上平面的阵列，每个像素导体是可经由电子切换装置的阵列中的相应的一个电子切换装置独立控制的，其中每个像素导体对于相对于像素导体的阵列的平面的给定入射角在相对于像素导体的阵列的平面的反射角的范围内表现出镜面反射。
根据一个实施例，受控表面形貌包括凸起特征件(feature)的阵列和／或凹陷特征件的阵列。
根据一个实施例，受控表面形貌使得所述受控表面形貌上没有点具有表现出相对于像素导体的阵列的平面大于约10度的角度的切平面(tangent plane)。
根据一个实施例，受控表面形貌表现出受控的不规则度。
根据一个实施例，受控表面形貌限定在绝缘体区域的表面之上以有序的方式重复的图案。
根据一个实施例，所述重复的图案表现出不规则度。
根据一个实施例，受控表面形貌限定以基本上不小于像素导体的阵列中的一个的尺寸的节距(pitch)重复的不规则的单元图案。
根据一个实施例，受控表面形貌限定以大于可见光的波长的节距重复的不规则的单元图案。
根据一个实施例，形成所述绝缘体区域包括在电子切换装置的阵列之上沉积绝缘材料并且随后通过激光烧蚀使沉积的绝缘材料的表面图案化以便实现所述受控表面形貌。
由此还提供了一种用于反射式显示装置的控制部件，所述控制部件包括：电子切换装置的阵列；绝缘体区域，形成在所述电子切换装置的阵列之上并且限定受控表面形貌；以及反射的像素导体的平面的阵列，形成在绝缘体区域的图案化表面上，并且每个像素导体是可经由电子切换装置的阵列中的相应的一个电子切换装置独立控制的；其中每个像素导体具有与绝缘体区域的表面基本上一致的上表面，并且对于相对于像素导体的阵列的平面的给定入射角在相对于像素导体的阵列的平面的反射角的范围内表现出镜面反射。
根据一个实施例，受控表面形貌包括凸起特征件的阵列和／或凹陷特征件的阵列。
根据一个实施例，受控表面形貌使得所述受控表面形貌上没有点具有表现出相对于像素导体的阵列的平面大于约10度的角度的切平面。
根据一个实施例，受控表面形貌表现出受控的不规则度。
根据一个实施例，受控表面形貌限定在绝缘体区域的表面之上以有序的方式重复的图案。
根据一个实施例，所述重复的图案表现出不规则度。
根据一个实施例，受控表面形貌限定以基本上不小于像素导体的阵列中的一个的尺寸的节距重复的不规则的单元图案。
根据一个实施例，受控表面形貌限定以大于可见光的波长的节距重复的不规则的单元图案。
附图说明
在下面通过仅仅示例的方式参考附图详细描述了本发明的实施例，在附图中：
图1示出根据本发明实施例的并入控制部件的示例的反射式显示装置；
图2示出用于制作图1中示出的控制部件的技术的示例；以及
图3示出供图2中示出的过程之用的激光掩模的示例。
具体实施方式
在下面描述本发明的实施例，以用作通过独立可控的顶部栅极薄膜晶体管(TFT)的阵列控制的像素化的反射式显示装置的示例。然而，相同的技术也用在其它反射式显示装置中。
参考图1和图2，根据本发明实施例的控制部件包括：衬底2；第一图案化的导电层，限定用于TFT的平面阵列中的每一个的源极电极4和漏极电极以及用于寻址(addressing)源极电极的寻址线(未示出)；提供在每对源极和漏极电极之间的各个半导体沟道8的半导电材料的图案化的层；经由栅极电介质区域10电容性地耦合到半导体沟道8的栅极电极12。电绝缘区域14被设置在上述结果得到的结构的整个之上。出于下面提到的原因，选择激光可烧蚀的材料(诸如，在紫外线激光的波长处具有吸收峰值的有机材料)用于至少这个电绝缘区域14的顶部。
接下来，激光烧蚀被用来在电绝缘区域的顶表面中限定凸起和／或凹陷特征件的阵列。这种三维的特征件可以例如通过使用多个激光发射(shots)(其中每个激光发射将稍有不同的烧蚀图案投影到电绝缘区域14的表面上)而被限定在电绝缘区域的表面部分中。出于凸起特征件的阵列的示例，激光束被聚焦在电绝缘区域的表面的在其中要限定凸起特征件中的相应一个的单元区域(unit area)上，并且单元区域的连续增大部分被掩蔽于每个连续激光发射。供这种技术之用的激光掩模30的示例被示出在图3中。黑色部分32表示掩模的不透射激光的部分(暗场部分)。对于绝缘区域14的表面的任何单元区域，第一激光发射掩模经由最小的暗场圆之一被实现，并且随着每个连续激光发射，掩模向左移动一个暗场圆，直到最后的激光发射经由最大的暗场圆之一被实现。
利用图3中示出的掩模，在一个单元区域中同时产生多个凸起特征件，并且对于构成绝缘区域14的表面的多个单元区域中的每个单元区域重复激光烧蚀处理。结果得到的表面形貌包括由横过绝缘区域的表面以有序的方式重复的掩模限定的3维的图案。
例如，显著凸起的结构具有显著大于在一些区域中(即在凸起结构的横向(lateral)边缘处)的总烧蚀深度的半径。优选的是，表面形貌使得其没有点具有表现出相对于电绝缘层14的平面大于约10度的角度的切平面。
优选的是凸起或者凹陷的特征件的阵列表现出不规则度(degreeof irregularity)以便更好地避免不期望的干涉效应。可以通过相应地设计图3中示出的那种激光烧蚀掩模来将受控的不规则度并入凸起或者凹陷的特征件的阵列中。结果得到的表面形貌包括由横过绝缘区域的表面以有序的方式重复的掩模限定的不规则的3维的图案。
根据一个示例，占地区域不小于单个像素电极16(下面讨论)的占地区域的不规则的3维的单元图案横过整个电绝缘层14地被重复。根据一个更具体的示例，表面形貌在像素电极16之间表现出次序(order)，但在任何单个像素电极16内没有次序。
上述的凸起特征件的阵列仅仅是具有显著小于它的x-y维的z维(烧蚀深度)的3D特征件的阵列的一个示例。
对于TFT的阵列的每个漏极电极6，然后在绝缘区域14以及栅极电介质区域10中限定相应的通孔(via hole)25，这些通孔25向下延伸到相应的漏极电极6。用导电材料填充这些通孔25以便产生漏极电极6与接下来的步骤中形成的相应的像素电极16之间的层间导电连接。像素电极16是通过如下操作来形成的：通过保形沉积技术沉积反射材料(例如金属材料)的层由此沉积的反射层的表面具有与绝缘区域14的图案化表面基本上相同的形貌轮廓(topographicprofile)，并且随后去除沉积的反射材料层的所选择的部分以便限定像素电极16的阵列，每个像素电极16经由相应的层间连接件26连接到相应的漏极电极6。保形沉积技术的一个示例是气相沉积技术，诸如溅射。用于反射层的合适的材料的示例包括金属以及聚(3，4-乙撑二氧噻吩)。
接下来，显示介质28(诸如液晶显示介质)被布置在像素电极的阵列之上。可以在像素电极16的阵列与显示介质28之间存在一个或更多个层／部件，诸如滤色器的阵列(在显示装置是彩色显示装置的情况下)。
图1还示出从包括像素电极中限定的凸起特征件的阵列的控制部件的上述示例的像素电极16之一的光的反射。如图1所示，像素电极16中限定的凸起特征件的阵列对于相对于像素电极16的平面处于任意给定角度的入射光提供在相对于像素电极16的平面不同的反射角的范围内的通过显示介质返回的镜面反射。图1示出对于一个垂直平面的不同的反射角的范围，但是当然将存在在与像素电极16的平面垂直的彼此垂直平面中的反射角的类似的范围。对于相对于像素电极的平面处于任意给定入射角的入射光的反射的总范围可以被表示为三维的颠倒的圆锥体(cone)，该圆锥体的顶端在像素电极16处并且该圆锥体具有与入射光的所述方向平行的轴。
这个技术即使当反射式显示装置在具有高度依赖方向的强度的光之下操作时也提供在相对大范围的观看角度下的良好的显示亮度。
本发明不限于前述的示例。本发明的方面包括在此描述的概念的所有新颖的和／或有创造性的方面以及在此描述的特征的所有新颖的和／或有创造性的组合。
由此本申请人分离地公开了在此描述的每个单独的特征以及两个或更多个这种特征的任意组合，以使得这种特征或者组合能够基于本说明书整体鉴于本领域技术人员的共同的常识被实现，而不管这种特征或者特征的组合是否解决在本申请中公开的任何问题，并且不限制权利要求的范围。本申请人指出本发明的方面可以由任意这种单独的特征或者特征的组合组成。鉴于前述的描述，对于本领域技术人员将明显的是可以在本发明范围内进行各种修改。

Claims (17)

1.一种制作用于反射式显示装置的控制部件的方法，所述方法包括如下步骤：
形成电子切换装置的阵列；
在所述电子切换装置的阵列之上形成限定受控表面形貌的绝缘体区域；以及
通过保形沉积技术在绝缘体区域的图案化表面上形成反射的像素导体的基本上平面的阵列，每个像素导体是可经由电子切换装置的阵列中的相应的一个电子切换装置独立控制的，其中每个像素导体对于相对于像素导体的阵列的平面的给定入射角在相对于像素导体的阵列的平面的反射角的范围内表现出镜面反射。
2.根据权利要求1所述的方法，其中受控表面形貌包括凸起特征件的阵列和／或凹陷特征件的阵列。
3.根据权利要求2所述的方法，其中受控表面形貌使得所述受控表面形貌上没有点具有表现出相对于像素导体的阵列的平面大于约10度的角度的切平面。
4.根据权利要求1到3中的任意一个所述的方法，其中受控表面形貌表现出受控的不规则度。
5.根据权利要求1到4中的任意一个所述的方法，其中受控表面形貌限定在绝缘体区域的表面之上以有序的方式重复的图案。
6.根据权利要求5所述的方法，其中所述重复的图案表现出不规则度。
7.根据权利要求1到6中的任意一个所述的方法，其中受控表面形貌限定以基本上不小于像素导体的阵列中的一个的尺寸的节距重复的不规则的单元图案。
8.根据权利要求1到6中的任意一个所述的方法，其中受控表面形貌限定以大于可见光的波长的节距重复的不规则的单元图案。
9.根据权利要求1到8中的任意一个所述的方法，其中形成所述绝缘体区域包括在电子切换装置的阵列之上沉积绝缘材料并且随后通过激光烧蚀使沉积的绝缘材料的表面图案化以便实现所述受控表面形貌。
10.一种用于反射式显示装置的控制部件，所述控制部件包括：
电子切换装置的阵列；
绝缘体区域，形成在所述电子切换装置的阵列之上并且限定受控表面形貌；以及
反射的像素导体的平面的阵列，形成在绝缘体区域的图案化表面上，并且每个像素导体是可经由电子切换装置的阵列中的相应的一个电子切换装置独立控制的；
其中每个像素导体具有与绝缘体区域的表面基本上一致的上表面，并且对于相对于像素导体的阵列的平面的给定入射角在相对于像素导体的阵列的平面的反射角的范围内表现出镜面反射。
11.根据权利要求10所述的控制部件，其中受控表面形貌包括凸起特征件的阵列和／或凹陷特征件的阵列。
12.根据权利要求11所述的控制部件，其中受控表面形貌使得所述受控表面形貌上没有点具有表现出相对于像素导体的阵列的平面大于约10度的角度的切平面。
13.根据权利要求10到12中的任意一个所述的控制部件，其中受控表面形貌表现出受控的不规则度。
14.根据权利要求10到13中的任意一个所述的控制部件，其中受控表面形貌限定在绝缘体区域的表面之上以有序的方式重复的图案。
15.根据权利要求14所述的控制部件，其中所述重复的图案表现出不规则度。
16.根据权利要求10到15中的任意一个所述的控制部件，其中受控表面形貌限定以基本上不小于像素导体的阵列中的一个的尺寸的节距重复的不规则的单元图案。
17.根据权利要求10到15中的任意一个所述的控制部件，其中受控表面形貌限定以大于可见光的波长的节距重复的不规则的单元图案。
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