CN103456591B - 自动频率调谐源和偏置射频电源的电感耦合等离子处理室 - Google Patents
自动频率调谐源和偏置射频电源的电感耦合等离子处理室 Download PDFInfo
- Publication number
- CN103456591B CN103456591B CN201210175897.2A CN201210175897A CN103456591B CN 103456591 B CN103456591 B CN 103456591B CN 201210175897 A CN201210175897 A CN 201210175897A CN 103456591 B CN103456591 B CN 103456591B
- Authority
- CN
- China
- Prior art keywords
- power supply
- frequency power
- radio
- frequency
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 119
- 230000008569 process Effects 0.000 title claims abstract description 96
- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 41
- 238000012545 processing Methods 0.000 claims abstract description 33
- 238000012360 testing method Methods 0.000 claims abstract description 29
- 230000008859 change Effects 0.000 claims abstract description 16
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 230000005611 electricity Effects 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 description 10
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210175897.2A CN103456591B (zh) | 2012-05-31 | 2012-05-31 | 自动频率调谐源和偏置射频电源的电感耦合等离子处理室 |
| TW101151245A TW201349280A (zh) | 2012-05-31 | 2012-12-28 | 自動頻率調諧源和偏置射頻電源的電感耦合等離子處理室 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210175897.2A CN103456591B (zh) | 2012-05-31 | 2012-05-31 | 自动频率调谐源和偏置射频电源的电感耦合等离子处理室 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103456591A CN103456591A (zh) | 2013-12-18 |
| CN103456591B true CN103456591B (zh) | 2016-04-06 |
Family
ID=49738844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210175897.2A Active CN103456591B (zh) | 2012-05-31 | 2012-05-31 | 自动频率调谐源和偏置射频电源的电感耦合等离子处理室 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103456591B (enExample) |
| TW (1) | TW201349280A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11355325B2 (en) | 2020-05-28 | 2022-06-07 | Applied Materials, Inc. | Methods and systems for monitoring input power for process control in semiconductor process systems |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI647735B (zh) * | 2013-03-15 | 2019-01-11 | 美商蘭姆研究公司 | 使用模型化以建立與電漿系統相關的離子能量 |
| CN106298419B (zh) * | 2015-05-18 | 2018-10-16 | 中微半导体设备(上海)有限公司 | 电感耦合等离子体处理系统及处理方法 |
| CN106298418B (zh) * | 2015-05-18 | 2018-10-16 | 中微半导体设备(上海)有限公司 | 电感耦合等离子体处理系统及处理方法 |
| CN104849598B (zh) * | 2015-05-25 | 2018-04-10 | 上海美诺福科技股份有限公司 | 一种射频发生器的控制电路与检测系统 |
| US10347464B2 (en) * | 2015-09-15 | 2019-07-09 | Lam Research Corporation | Cycle-averaged frequency tuning for low power voltage mode operation |
| TWI667487B (zh) * | 2016-09-29 | 2019-08-01 | 美商超精細研究股份有限公司 | 射頻線圈調諧方法及裝置 |
| CN110416047B (zh) | 2018-04-27 | 2021-03-02 | 北京北方华创微电子装备有限公司 | 射频阻抗匹配的方法及装置、半导体处理设备 |
| CN113065237B (zh) * | 2021-03-19 | 2022-11-08 | 四川英杰电气股份有限公司 | 一种自动设置调频边界的方法和射频电源 |
| CN114446758B (zh) * | 2022-01-21 | 2024-04-12 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室及半导体工艺方法 |
| CN114724945A (zh) * | 2022-05-18 | 2022-07-08 | 北京屹唐半导体科技股份有限公司 | 等离子体氮化掺杂方法和装置及半导体器件 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0421430A2 (en) * | 1989-10-03 | 1991-04-10 | Applied Materials, Inc. | A plasma process, method and apparatus |
| EP0727923A1 (en) * | 1995-02-15 | 1996-08-21 | Applied Materials, Inc. | Modifications in or relating to RF plasma reactors and methods of operation thereof |
| CN1871373A (zh) * | 2003-06-19 | 2006-11-29 | 等离子控制系统有限公司 | 等离子体生成设备和方法以及具有可调工作周期的rf驱动电路 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200300649A (en) * | 2001-11-27 | 2003-06-01 | Alps Electric Co Ltd | Plasma processing apparatus, its driving method, matching circuit design system, and plasma processing method |
| US20030192646A1 (en) * | 2002-04-12 | 2003-10-16 | Applied Materials, Inc. | Plasma processing chamber having magnetic assembly and method |
| JP5426811B2 (ja) * | 2006-11-22 | 2014-02-26 | パール工業株式会社 | 高周波電源装置 |
| TW200903625A (en) * | 2007-07-04 | 2009-01-16 | Advanced Micro Fab Equip Inc | Multi-station decoupled reactive ion etch chamber |
| KR101641130B1 (ko) * | 2008-10-09 | 2016-07-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 대형 플라즈마 처리 챔버를 위한 ｒｆ 복귀 경로 |
| TWI416995B (zh) * | 2009-08-17 | 2013-11-21 | Advanced Micro Fab Equip Inc | A plasma processing chamber having a switchable bias frequency, and a switchable matching network |
| TWI500804B (zh) * | 2009-11-17 | 2015-09-21 | Applied Materials Inc | 具有電極ｒｆ匹配之大面積電漿處理腔室 |
| CN201962350U (zh) * | 2010-11-09 | 2011-09-07 | 中微半导体设备(上海)有限公司 | 一种原位清洁第iii族元素和第v族元素化合物沉积反应腔的装置 |
-
2012
- 2012-05-31 CN CN201210175897.2A patent/CN103456591B/zh active Active
- 2012-12-28 TW TW101151245A patent/TW201349280A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0421430A2 (en) * | 1989-10-03 | 1991-04-10 | Applied Materials, Inc. | A plasma process, method and apparatus |
| EP0727923A1 (en) * | 1995-02-15 | 1996-08-21 | Applied Materials, Inc. | Modifications in or relating to RF plasma reactors and methods of operation thereof |
| CN1871373A (zh) * | 2003-06-19 | 2006-11-29 | 等离子控制系统有限公司 | 等离子体生成设备和方法以及具有可调工作周期的rf驱动电路 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11355325B2 (en) | 2020-05-28 | 2022-06-07 | Applied Materials, Inc. | Methods and systems for monitoring input power for process control in semiconductor process systems |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201349280A (zh) | 2013-12-01 |
| TWI484527B (enExample) | 2015-05-11 |
| CN103456591A (zh) | 2013-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103456591B (zh) | 自动频率调谐源和偏置射频电源的电感耦合等离子处理室 | |
| CN101866807B (zh) | 具有响应多个rf频率的等离子体处理器 | |
| US5556549A (en) | Power control and delivery in plasma processing equipment | |
| CN108878240B (zh) | 阻抗匹配装置及半导体加工设备 | |
| KR20170054239A (ko) | 복수 출력 무선주파수 매칭 모듈 및 연관된 방법들 | |
| CN108574345A (zh) | 一种无线电能传输设备发射端自适应调谐装置及调谐方法 | |
| CN107180737B (zh) | 用于实现阻抗匹配和功率分配的装置及半导体加工设备 | |
| CN100587892C (zh) | 一种阻抗匹配的方法及阻抗匹配装置 | |
| CN101374381A (zh) | 实现射频阻抗匹配的方法及射频阻抗匹配系统 | |
| CN108012401A (zh) | 射频阻抗匹配方法、匹配器和半导体处理装置 | |
| CN106549435A (zh) | 用于无线充电系统的恒定电流射频发生器 | |
| CN105472082A (zh) | 辐射杂散辅助测试电路 | |
| CN202905659U (zh) | 一种匹配器及等离子体加工设备 | |
| CN104993235B (zh) | 一种天线装置及电子设备 | |
| CN105810547A (zh) | 等离子体处理装置的阻抗匹配方法 | |
| CN103619117B (zh) | 可实现快速阻抗匹配的射频电源系统 | |
| CN107454731A (zh) | 射频自动阻抗匹配器及半导体设备 | |
| CN113014088B (zh) | 一种宽负载范围的全固态射频电源 | |
| CN107305831B (zh) | 一种阻抗匹配装置和等离子体处理设备 | |
| CN104754851B (zh) | 多频匹配器及等离子体装置 | |
| CN108270412A (zh) | 一种等离子体处理装置及其射频滤波电路 | |
| CN202696585U (zh) | 一种自动调谐阻抗匹配系统 | |
| TWI668720B (zh) | Variable capacitance, impedance matching device and semiconductor processing device | |
| CN107305830A (zh) | 电容耦合等离子体处理装置与等离子体处理方法 | |
| CN116195184A (zh) | 用于重复调谐匹配网络的系统和方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CP01 | Change in the name or title of a patent holder |