CN103454818A - Conductive structure applied to panel and manufacturing method of conductive structure - Google Patents
Conductive structure applied to panel and manufacturing method of conductive structure Download PDFInfo
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- CN103454818A CN103454818A CN2012101739666A CN201210173966A CN103454818A CN 103454818 A CN103454818 A CN 103454818A CN 2012101739666 A CN2012101739666 A CN 2012101739666A CN 201210173966 A CN201210173966 A CN 201210173966A CN 103454818 A CN103454818 A CN 103454818A
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Abstract
The invention discloses a conductive structure applied to a panel and a manufacturing method of the conductive structure. The conductive structure applied to the panel is formed on the upper surface of a plate and comprises a first metal layer, a nitride layer and a second metal layer. The first metal layer is positioned on the upper surface and provided with a first side and a bottom connected with the first side, the bottom contacts with the upper surface, and the first metal layer contains molybdenum. The nitride layer is positioned on the first metal layer, is provided with a second side and contains molybdenum. The second metal layer is positioned on the nitride layer and provided with a third side which is adjacent to the first side and the third side to form an inclined surface. The included angle between the inclined surface and the bottom ranges from 20 degrees to 75 degrees.
Description
Technical field
The present invention relates to a kind of conductive structure and manufacture method, and particularly relate to a kind of conductive structure and manufacture method thereof that is applied to panel.
Background technology
At liquid crystal display (Liquid Crystal Display now, LCD) in, many conductor wires of transistor (TFT) array substrate (transistor array substrate), for example sweep trace (scan line) and data line (data line), be all to adopt sputter (sputtering), micro-shadow (photolithography) to form with etching (etching) usually.Specifically, after utilizing sputter formation metal level, can form one deck photoresist layer (photoresist layer) on this metal level, wherein photoresist layer can local exposing metal layer.Afterwards, using this photoresist layer as shielding, etch metal layers, to form these conductor wires.
Fig. 1 is the diagrammatic cross-section of the conductor wire of formed a kind of known transistor array base palte after etching.Refer to Fig. 1, metal level (not shown) on substrate 100 is through etching and after forming conductor wire 110, the side of conductor wire 110 sometimes can form inclined side 111, and wherein the included angle A 1 between inclined side 111 and substrate 100 plate faces 101 can be greater than 90 degree.
Specifically, conductor wire 110 has an end face 112 and a bottom surface 114, and wherein end face 112 is with respect to 114，Er bottom surface, bottom surface 114 contact substrate 100 plate faces 101.From Fig. 1, the area of end face 112 is greater than the area of bottom surface 114, and the width W 1 of conductor wire 110 in fact can from end face 112 towards bottom surface 114 convergents, thereby form inclined side 111.
Yet, if sputter equal vacuum deposition (vacuum deposition) is carried out in follow-up requirements of process, inclined side 111 can be unfavorable for vacuum moulding machine.Specifically, be positioned at the partially conductive line 110 meeting covering plate faces 101 at inclined side 111 places, to such an extent as to be positioned at the plate face 101 of inclined side 111 belows, be difficult to form via deposition rete.Therefore, after having carried out vacuum moulding machine, may form cavity (cavity) between inclined side 111 and plate face 101 and the structural strength of reduction conductor wire 110, cause the possibility of conductor wire 110 fractures.
Summary of the invention
The invention provides a kind of conductive structure that is applied to panel, it can reduce the probability that above-mentioned cavity forms after carrying out vacuum moulding machine.
The present invention separately provides a kind of manufacture method that is applied to the conductive structure of panel, and it can manufacture above-mentioned conductive structure.
One embodiment of the invention proposes a kind of conductive structure that is applied to panel, and it is formed on a upper surface of a sheet material, and comprises a first metal layer, mononitride layer and one second metal level.The first metal layer is positioned on upper surface, and has the bottom surface of one first side and connected first side, and wherein the composition of the first metal layer contains molybdenum, and bottom surface contact upper surface.Nitride layer is positioned on the first metal layer, and has one second side, and wherein the composition of nitride layer contains molybdenum.The second metal level is positioned on nitride layer, and has one the 3rd side, and wherein the second side is in abutting connection with the first side and the 3rd side, to form angle between a ，Er inclined-plane, inclined-plane and bottom surface between 20 degree to 75 degree.
Another embodiment of the present invention also proposes a kind of manufacture method that is applied to the conductive structure of panel.In the manufacture method of this conductive structure, at first, carry out one first vacuum moulding machine, to form a first metal layer on a upper surface of a sheet material, wherein the composition of the first metal layer contains molybdenum, and the first metal layer has the bottom surface of a contact upper surface.Then, form the mononitride layer on the first metal layer, wherein the composition of nitride layer contains atomic percent at the molybdenum more than 55.Then, form one second metal level on nitride layer.Then, patterning the first metal layer, nitride layer and the second metal level, with local exposed upper surface, and form an inclined-plane, and wherein the angle between inclined-plane and bottom surface is between 20 degree to 75 degree.
Based on above-mentioned, utilize the first metal layer and oxide skin(coating), can on sheet material, form the bevelled conductive structure of tool.Due to the angle between the bottom surface of inclined-plane and conductive structure, between 20 degree to 75 degree, the partially conductive structure that therefore is positioned at the place, inclined-plane can not hide sheet material.So, in carrying out follow-up vacuum-deposited process, sediment can cover inclined-plane, to reduce, forms empty probability between inclined-plane and sheet material.
For enabling further to understand feature of the present invention and technology contents, refer to following about detailed description of the present invention and accompanying drawing, but these explanations with appended graphic be only for the present invention is described, but not claim scope of the present invention is done to any restriction.
The accompanying drawing explanation
Fig. 1 is the diagrammatic cross-section of the conductor wire of formed a kind of known transistor array base palte after etching.
Fig. 2 is the diagrammatic cross-section of the applied panel of conductive structure of one embodiment of the invention.
Fig. 3 is the diagrammatic cross-section of the conductive structure that is applied to panel of another embodiment of the present invention.
Fig. 4 A to Fig. 4 E is the flow process diagrammatic cross-section of the manufacture method of the conductive structure in Fig. 3.
Fig. 5 A to Fig. 5 B is the diagrammatic cross-section of the formation flow process of nitride layer in another embodiment of the present invention.
[main element symbol description]
30 sheet materials
32,212,222 upper surfaces
40 photoresistance patterns
100,210 substrates
101 plate faces
110 conductor wires
111 inclined sides
112,322 end faces
114,312,312 ' bottom surface
200 panels
201,202,300 conductive structures
220,240 insulation courses
230 pixel electrodes
301 inclined-planes
310,310 ', 410 ' the first metal layer
314 first sides
320, the 320 ' second metal level
324 the 3rd sides
330,330 ' nitride layer
334 second sides
A1, A2 angle
L1, L2, L3, L4 thickness
P1 electricity slurry
The T1 transistor
W1, W2 width
Embodiment
The conductive structure of various embodiments of the present invention can be applied to polytype panel.For example, these panels can comprise touch-control sensing panel (Touch Sensor Panel, TSP) and the transistor (TFT) array substrate in display etc., wherein this display is for example liquid crystal display, plasma display panel (Plasma Display) or organic light emitting diode display (Organic Light-Emitting Diode Display, OLED Display) etc.
Wherein a kind of conductive structure in the middle of these embodiment can form many conductor wires in touch-control sensing panel or transistor (TFT) array substrate.These conductor wires are such as sweep trace, data line, bridging line (common line) or the perimeter circuit (peripheral circuit) etc. that are transistor (TFT) array substrate, or connect the conductor wire of sensing electrode (sensing electrode) in the touch-control sensing panel, wherein the perimeter circuit of transistor (TFT) array substrate can comprise short-circuiting bar (shorting bar) or patch cord (repair line) etc.
Fig. 2 is the diagrammatic cross-section of the applied panel of conductive structure of one embodiment of the invention.Refer to Fig. 2, it illustrates two kinds of conductive structures 201,202 and these conductive structures 201 and 202 applied panels 200, wherein the panel shown in Fig. 2 200 can be the transistor (TFT) array substrate in liquid crystal display, so panel 200 can have a plurality of transistor T 1(Fig. 2, only illustrates one).But, in other embodiments, panel 200 also can be replaced with the touch-control sensing panel, so should be noted that, the type of the panel 200 shown in Fig. 2 is only for illustrating, and the application of non-limiting conductive structure of the present invention.
In the embodiment shown in Figure 2, conductive structure 201 is formed on the upper surface 212 of a substrate 210, and is covered by an insulation course 220, and conductive structure 202 is formed on the upper surface 222 of insulation course 220, and by an insulation course 240, covered, wherein substrate 210 is for example glass substrate.Conductive structure 201 can form the grid (gate) of sweep trace and transistor T 1, and conductive structure 202 can form the source electrode (source) and drain electrode (drain) of data line and transistor T 1, the partially conductive structure 202 that wherein connects pixel electrode (pixel electrode) 230 is the source electrode of transistor T 1.
Fig. 3 is the diagrammatic cross-section of the conductive structure that is applied to panel of another embodiment of the present invention.Refer to Fig. 3, the conductive structure 300 of the present embodiment can be formed on the upper surface 32 of a sheet material 30, and can be the conductive structure 201 or 202 in Fig. 2.Therefore, when conductive structure 300 is conductive structure 201, sheet material 30 can be the substrate 210 in Fig. 2.When conductive structure 300 is conductive structure 202, sheet material 30 can comprise substrate 210 and the position insulation course 220 on substrate 210.
Hence one can see that, when carrying out follow-up vacuum moulding machine, for example sputter, chemical vapor deposition (Chemical Vapor Deposition, CVD) or evaporation (evaporation), with on upper surface 32 with conductive structure 300 on for example, while forming sediment (insulation course shown in Fig. 2 220 and 240), sediment can be deposited on inclined-plane 301.So, can reduce the empty probability of formation between inclined-plane 301 and upper surface 32, reduce with the structural strength of avoiding conductive structure 300, thereby reduce for example, possibility by the formed conductor wire of conductive structure 300 (sweep trace, data line or bridging line) fracture.
The first metal layer 310 has one first side 314 and 312，Er bottom surface, bottom surface 312 is connected with the first side 314.Nitride layer 330 has one second side 334, and the second metal level 320 has one the 3rd side 324.The second 334 of sides are between the first side 314 and the 3rd side 324, and, in abutting connection with the first side 314 and the 3rd side 324, to form inclined-plane 301, wherein inclined-plane 301 comprises the first side 314, the second side 334 and the 3rd side 324.
The first metal layer 310 is consisted of one or more metal materials, so the first metal layer 310 can be alloy-layer or the metal level consisted of single kind of metal material in fact.The composition of the first metal layer 310 contains molybdenum, and its preferred atomic percent can be more than 80, and the first metal layer 310 can be molybdenum alloy layer or molybdenum layer, and wherein this molybdenum alloy layer is for example molybdenum niobium alloy layer, molybdenum and tungsten alloy layer or molybdenum titanium alloy layer.
When the first metal layer 310 is the molybdenum layer, the atomic percent of the molybdenum that the first metal layer 310 is contained can be more than 90%, is for example 99%.Under the prerequisite of ignoring the contained trace impurity of the first metal layer 310, the atomic percent of the molybdenum in the first metal layer 310 can also be in fact 100%.But, when the first metal layer 310 is the molybdenum alloy layer, the atomic percent of the molybdenum in the first metal layer 310 can be between 80 to 99.
The composition of nitride layer 330 not only contains nitrogen, and contains molybdenum, and wherein the atomic percent of molybdenum in nitride layer 330 is more than 55.Nitride layer 330 can be nitrogenize molybdenum layer or molybdenum nitride alloy-layer, and the molybdenum nitride alloy-layer is consisted of molybdenum niobium alloy nitride, molybdenum and tungsten alloy nitride or molybdenum titanium alloy nitride.That is to say, the contained metal material of nitride layer 330 can be in fact to only have molybdenum, or comprises molybdenum and other metals (being for example niobium, tungsten or titanium).When nitride layer 330 is the nitrogenize molybdenum layer, the atomic percent of the molybdenum in nitride layer 330 in fact can be between 55 to 98.8.When nitride layer 330 is the molybdenum nitride alloy-layer, the atomic percent of the molybdenum in nitride layer 330 in fact can be between 65 to 98.5.
The second metal level 320 is consisted of the metal material with high conductivity (electric conductivity), for example gold, silver, copper, aluminium or aluminium copper.Therefore, the second metal level 320 can be copper metal layer or aluminum-copper alloy layer.In addition, the thickness L1 of the first metal layer 310 can be in 10 nanometers, and for example the thickness L1 of the first metal layer 310 can be in 5 nanometers, or between 5 nanometer to 10 nanometers.The thickness L2 of the second metal level 320 can be between 50 nanometer to 4000 nanometers, and for example the thickness L2 of the second metal level 320 can be 250 nanometers.The thickness L3 of nitride layer 330 can be in 100 nanometers, and for example the thickness L3 of nitride layer 330 can be 20 nanometers.
The structure of above article conductive structure 300 and material.Next, will coordinate Fig. 4 A to Fig. 4 E to describe the manufacture method of conductive structure 300 in detail.
Fig. 4 A to Fig. 4 E is the flow process diagrammatic cross-section of the manufacture method of the conductive structure in Fig. 3.Refer to Fig. 4 A, in the manufacture method of the conductive structure 300 of the present embodiment, at first, carry out the first vacuum moulding machine, to form one deck the first metal layer 310 ' on the upper surface 32 at sheet material 30, wherein the first vacuum moulding machine can be sputter, evaporation or chemical vapor deposition, and the first metal layer 310 ' has the bottom surface 312 ' of a contact upper surface 32.
The composition of the first metal layer 310 ' is identical with the composition of the first metal layer 310 in Fig. 3, and the thickness of the first metal layer 310 ' is identical with the thickness of the first metal layer 310.So the first metal layer 310 ' also has thickness L1, and the composition of the first metal layer 310 ' contains atomic percent at the molybdenum more than 80.For example, the first metal layer 310 ' can be molybdenum layer or molybdenum alloy layer, and this molybdenum alloy layer is for example molybdenum niobium alloy layer, molybdenum and tungsten alloy layer or molybdenum titanium alloy layer.
In addition, when the first vacuum moulding machine is sputter, the sputtered target material that the first vacuum moulding machine adopts can be molybdenum target or molybdenum alloy target, and the first vacuum-deposited background pressure (background pressure) can be 10
-3handkerchief (Pa) is to 10
-6between handkerchief, wherein this background pressure refers to that sputter is wanted in preparation but pressure in processing chamber (process chamber) while not yet passing into any gas.
Refer to Fig. 4 B, then, at the upper one deck nitride layer 330 ' that forms of the first metal layer 310 ', wherein the composition of nitride layer 330 ' is identical with the composition of nitride layer 330 in Fig. 3, and the thickness of nitride layer 330 ' is identical with the thickness of nitride layer 330.So nitride layer 330 ' also has thickness L3, and the composition of nitride layer 330 ' contains atomic percent at the molybdenum more than 55.For example, nitride layer 330 ' can be nitrogenize molybdenum layer or molybdenum nitride alloy-layer, and the molybdenum nitride alloy-layer is consisted of molybdenum niobium alloy nitride, molybdenum and tungsten alloy nitride or molybdenum titanium alloy nitride.
The method that forms nitride layer 330 ' can be to carry out the second vacuum moulding machine, and wherein the second vacuum moulding machine can be sputter, evaporation or chemical vapor deposition.When the second vacuum moulding machine is sputter, the target kind adopted according to the second vacuum moulding machine, nitride layer 330 ' can adopt at least two kinds of different method for sputtering to form, and the difference of these two kinds of method for sputtering be mainly carry out second vacuum-deposited during, whether pass into nitrogen to processing chamber.
Specifically, when the sputtered target material of the second vacuum moulding machine employing is molybdenum target or molybdenum alloy target, carry out second vacuum-deposited during, can pass into nitrogen to the residing processing chamber of sheet material 30, to form nitride layer 330 ', wherein the first vacuum moulding machine and the second vacuum moulding machine can adopt same sputtered target material, so the first vacuum moulding machine and the second vacuum moulding machine all can be carried out in same processing chamber, to such an extent as to during the first vacuum moulding machine to the second is vacuum-deposited, sheet material 30 can be in the environment that pressure is less than atmospheric pressure always, thereby maintain the membrane quality of the first metal layer 310 ' and nitride layer 330 '.
The sputtered target material adopted when the second vacuum moulding machine is nitrogenize molybdenum target or while being for example the molybdenum nitride alloys target consisted of molybdenum niobium alloy nitride, molybdenum and tungsten alloy nitride or molybdenum titanium alloy nitride, carry out second vacuum-deposited during, can only pass into basic gas (for example argon gas) that sputter uses to the residing processing chamber of sheet material 30, and no longer additionally pass into nitrogen.
Although the sputtered target material that the second vacuum moulding machine adopts can be nitrogenize molybdenum target or molybdenum nitride alloys target, and be different from the sputtered target material that the first vacuum moulding machine adopts, but during the first vacuum moulding machine to the second is vacuum-deposited, utilize the physical construction of vacuum chamber (vacuum chamber) or switching target, also can allow sheet material 30 be in the environment that pressure is less than atmospheric pressure, to maintain the membrane quality of the first metal layer 310 ' and nitride layer 330 ' always.
Refer to Fig. 4 C, afterwards, at upper one deck the second metal level 320 ' that forms of nitride layer 330 ', the method that wherein forms the second metal level 320 ' can be to carry out vacuum moulding machine, it is for example sputter, evaporation or chemical vapor deposition, and wherein this vacuum-deposited background pressure can be 10
-3handkerchief to 10
-6between handkerchief.Form nitride layer 330 ' to form the second metal level 320 ' during, utilize the physical construction of vacuum chamber or switching target, also can allow sheet material 30 be in the environment that pressure is less than atmospheric pressure, to maintain the film quality of the second metal level 320 ' always.
Hold above-mentioned, in the present embodiment, the composition of the second metal level 320 ' is identical with the composition of the second metal level 320 in Fig. 3, and the thickness of the second metal level 320 ' is identical with the thickness of the second metal level 320, so the second metal level 320 ' can be copper metal layer or aluminum-copper alloy layer, and have thickness L2, they can be between 50 nanometer to 4000 nanometers, for example 250 nanometers.
Refer to Fig. 4 D and Fig. 4 E, then, patterning the first metal layer 310 ', nitride layer 330 ' and the second metal level 320 ', to form the first metal layer 310, nitride layer 330 and the second metal level 320, and local exposed panel 30 upper surfaces 32.So far, basically, the conductive structure 300 with inclined-plane 301 has formed, and wherein the included angle A 2 between the bottom surface 312 of inclined-plane 301 and the first metal layer 310 is between 20 degree to 75 degree.
The method of patterning the first metal layer 310 ', nitride layer 330 ' and the second metal level 320 ' has multiple enforcement means, and in the present embodiment, the method for patterning the first metal layer 310 ', nitride layer 330 ' and the second metal level 320 ' can adopt micro-shadow and etching.Particularly, at first, utilize micro-shadow, at the upper one deck photoresistance pattern 40 that forms of the second metal level 320 ', wherein photoresistance pattern 40 parts expose the second metal levels 320 ', as shown in Figure 4 D.
Then, using photoresistance pattern 40 as shielding, etching the first metal layer 310 ', nitride layer 330 ' and the second metal level 320 ', wherein the first metal layer 310 ', nitride layer 330 ' and the second metal level 320 ' can be to carry out etching by etching liquid or electricity slurry, and the method for etching the first metal layer 310 ', nitride layer 330 ' and the second metal level 320 ' can be Wet-type etching (wet etching) or dry-etching (dry etching).At patterning the first metal layer 310 ', nitride layer 330 ' and the second metal level 320 ' afterwards, can utilize the blocking solution of delustering to remove photoresistance pattern 40, to form conductive structure 300 as shown in Figure 3.
Above-mentioned etching liquid can be acid solution, the solution that the ph value is greater than 7, and wherein the composition of etching liquid can contain water, hydrogen peroxide (hydrogen peroxide, H
2o
2) and the salt material.In the present embodiment, the salt material mainly can be divided into two kinds, and a kind of is fluorine-containing salt, and another kind is not fluorine-containing salt.For example, the salt material can be floride-free inorganic salts or fluorine-containing ammonia salt.
In addition, in the process of Practical manufacturing conductive structure 300, when the thickness L1 of the first metal layer 310 ' is in 14 nanometers the time, the above-mentioned etching liquid the first metal layer 310 ' that ablation is exposed by photoresistance pattern 40 fully basically, and only stay the first metal layer 310 ' (being the first metal layer 310) covered by photoresistance pattern 40.So, can avoid the part the first metal layer 310 ' do not covered by photoresistance pattern 40 to remain on upper surface 32, thereby reduce by the be short-circuited situation of (short) of the formed conductor wire of conductive structure 300.
It is worth mentioning that, in the manufacture method of the conductive structure 300 shown in above Fig. 4 A to Fig. 4 E, nitride layer 330 ' is to adopt vacuum moulding machine (i.e. the second vacuum moulding machine) and form, but in other embodiments, nitride layer 330 ' can adopt the method beyond vacuum moulding machine to form, as shown in Fig. 5 A to Fig. 5 B.
Fig. 5 A to Fig. 5 B is the diagrammatic cross-section of the formation flow process of nitride layer in another embodiment of the present invention, and wherein the nitride layer of the present embodiment is to utilize electricity slurry bombardment (plasma bombard) to form.Specifically, refer to Fig. 5 A, at first, form one deck the first metal layer 410 ' on the upper surface 32 of sheet material 30, the method that wherein forms the first metal layer 410 ' is identical with the method that forms the first metal layer 310 ' (referring to Fig. 4 A), and the composition of the first metal layer 410 ' is identical with the composition of the first metal layer 310 '.But, the thickness L4 of the first metal layer 410 ' but is greater than the thickness L1 of the first metal layer 310 '.
Refer to Fig. 5 A and Fig. 5 B, then, the first metal layer 410 ' is carried out to the bombardment of electricity slurry, wherein the gas source of electricity slurry bombardment comprises nitrogen.Specifically, after passing into nitrogen, by freeization of nitrogen, to produce electricity slurry P1.Afterwards, electricity slurry P1 is subject to the control of electric field and can bombards the first metal layer 410 ', so that the part of the first metal layer 410 ' is transformed into nitride layer 330 ', the part the first metal layer 410 ' that does not occur to change becomes the first metal layer 310 '.
Hold above-mentionedly, after the first metal layer 310 ' and nitride layer 330 ' form, sequentially carry out the flow process shown in earlier figures 4C to Fig. 4 E.Afterwards, remove photoresistance pattern 40, thereby form the conductive structure 300 shown in Fig. 3.Because the flow process shown in Fig. 4 C to Fig. 4 E is introduced in detail in aforementioned content, so no longer repeat to repeat at this.
In sum, utilize above-mentioned the first metal layer and oxide skin(coating), can on sheet material, form the there is inclined-plane conductive structure on (for example inclined-plane shown in Fig. 3 301), wherein for example, angle between the bottom surface of this inclined-plane and conductive structure (bottom surface shown in Fig. 3 312), between 20 degree to 75 degree, can not hide sheet material to such an extent as to be positioned at the partially conductive structure at place, inclined-plane.
Therefore, for example, in the process of carrying out follow-up vacuum moulding machine (sputter, chemical vapor deposition or evaporation), sediment can cover end face (for example end face shown in Fig. 3 322) and the inclined-plane of conductive structure comprehensively, to reduce, forms empty probability between inclined-plane and sheet material.So, can avoid the structural strength of conductive structure to reduce, and reduce the possibility of conductor wire fracture.
The foregoing is only embodiments of the invention, it is not in order to limit scope of patent protection of the present invention.The change that any those of ordinary skill in the art does within not breaking away from spirit of the present invention and scope and the equivalence of retouching are replaced, and are still in the claimed scope of patent of the present invention.
Claims (20)
1. a conductive structure that is applied to panel, be formed on the upper surface of sheet material, it is characterized in that, described conductive structure comprises:
The first metal layer, described the first metal layer is positioned on described upper surface, and the bottom surface that has the first side and be connected with described the first side, and the composition of wherein said the first metal layer contains molybdenum, and described bottom surface contacts with described upper surface;
Nitride layer, described nitride layer is positioned on described the first metal layer, and has the second side, and the composition of wherein said nitride layer contains molybdenum; And
The second metal level, described the second metal level is positioned on described nitride layer, and thering is the 3rd side, wherein said the second side and described the first side and described the 3rd side adjacency are to form inclined-plane, and the angle between described inclined-plane and described bottom surface is between 20 degree to 75 degree.
2. conductive structure according to claim 1, is characterized in that, the thickness of described the first metal layer is in 14 nanometers.
3. conductive structure according to claim 2, is characterized in that, the thickness of described the first metal layer is in 8 nanometers.
4. conductive structure according to claim 1, is characterized in that, the thickness of described nitride layer is in 40 nanometers.
5. conductive structure according to claim 1, is characterized in that, the atomic percent of the molybdenum in described nitride layer is between 55% to 98.8%.
6. conductive structure according to claim 1, is characterized in that, the atomic percent of the molybdenum in described nitride layer is between 65% to 98.5%.
7. conductive structure according to claim 1, is characterized in that, described the second metal level is copper metal layer.
8. conductive structure according to claim 1, is characterized in that, described sheet material is glass substrate.
9. conductive structure according to claim 1, is characterized in that, described sheet material comprises:
Substrate; And
Insulation course, described insulation course is positioned on described substrate, and has described upper surface.
10. a manufacture method that is applied to the conductive structure of panel, is characterized in that, described manufacture method comprises:
Carry out the first vacuum moulding machine, on the upper surface of sheet material, to form the first metal layer, the composition of wherein said the first metal layer contains molybdenum, and described the first metal layer has and the contacted bottom surface of described upper surface;
Form nitride layer on described the first metal layer, the composition of wherein said nitride layer contains molybdenum;
Form the second metal level on described nitride layer; And
Described the first metal layer, described nitride layer and described the second metal level are carried out to patterned process and with part, expose described upper surface, and form inclined-plane, the angle between wherein said inclined-plane and described bottom surface is between 20 degree to 75 degree.
11. the manufacture method of conductive structure according to claim 10, is characterized in that, the method that forms described nitride layer is to carry out the second vacuum moulding machine.
12. the manufacture method of conductive structure according to claim 11, is characterized in that, the sputtered target material that described the second vacuum moulding machine adopts is nitrogenize molybdenum target or molybdenum nitride alloys target.
13. the manufacture method of conductive structure according to claim 11, is characterized in that, the sputtered target material that described the second vacuum moulding machine adopts is molybdenum target or molybdenum alloy target.
14. the manufacture method of conductive structure according to claim 13, is characterized in that, carry out described second vacuum-deposited during, pass into nitrogen in the residing processing chamber of described sheet material.
15. the manufacture method of conductive structure according to claim 10, is characterized in that, the method that forms described nitride layer comprises carries out the bombardment of electricity slurry to described the first metal layer, and the gas source of described electricity slurry bombardment comprises nitrogen.
16. the manufacture method of conductive structure according to claim 10, is characterized in that, the method that described the first metal layer, described nitride layer and described the second metal level are carried out to patterned process comprises:
Using the photoresistance pattern as shielding, described the first metal layer, described nitride layer and described the second metal level are carried out to etching.
17. the manufacture method of conductive structure according to claim 16, it is characterized in that, described the first metal layer, described nitride layer and described the second metal level carry out etching by etching liquid or electricity slurry, the composition of wherein said etching liquid contains water, hydrogen peroxide and salt material, and described salt material is floride-free inorganic salts or fluorine-containing ammonia salt.
18. the manufacture method of conductive structure according to claim 10, is characterized in that, described sheet material is glass substrate.
19. the manufacture method of conductive structure according to claim 10, is characterized in that, described sheet material comprises:
Substrate; And
Insulation course, described insulation course is positioned on described substrate, and has described upper surface.
20. the manufacture method of conductive structure according to claim 10, is characterized in that, described the second metal level is copper metal layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952878A (en) * | 2014-03-28 | 2015-09-30 | 群创光电股份有限公司 | Display panel |
| CN108573980A (en) * | 2017-03-09 | 2018-09-25 | 群创光电股份有限公司 | Conductor structure and panel device |
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| CN104952878B (en) * | 2014-03-28 | 2019-03-08 | 群创光电股份有限公司 | Display panel |
| CN108573980A (en) * | 2017-03-09 | 2018-09-25 | 群创光电股份有限公司 | Conductor structure and panel device |
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