CN1034449A - Hypothermia composition method for high TC supraconduction film material - Google Patents
Hypothermia composition method for high TC supraconduction film material Download PDFInfo
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- CN1034449A CN1034449A CN88100403A CN88100403A CN1034449A CN 1034449 A CN1034449 A CN 1034449A CN 88100403 A CN88100403 A CN 88100403A CN 88100403 A CN88100403 A CN 88100403A CN 1034449 A CN1034449 A CN 1034449A
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- CN
- China
- Prior art keywords
- metal organic
- dpm
- film material
- mocvd
- superconducting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
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- Inorganic Compounds Of Heavy Metals (AREA)
- Chemical Vapour Deposition (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
The present invention relates to the manufacture method of superconducting film material.The present invention is with metal organic chemistry vapour phase deposition process (MOCVD): with the volatile metal organic compound is the source, and adopting radio frequency or microwave plasma is excitaton source, forms metal organic chemical vapor deposition (MOCVD) process.Be lower than under 400 ℃ of temperature, forming the high Tc superconducting oxide thin-film material in substrate material surface.
The inventive method can directly be synthesized high Tc superconducting film at low temperatures, must be through high-temperature heat treatment.Make the high Tc superconducting film material with the inventive method, be easy to accurate control, deposition rate is fast, and backing material is extensive.The film light of making is smooth, does not have tangible interaction with the substrate adhesion-tight.
Description
The present invention relates to the manufacture method of superconducting film material.
At present, the method for manufacturing high Tc superconducting film material has: electron beam evaporation, physical vapor deposition methods (PVD) such as magnetron sputtering or high-frequency sputtering, silk screen printing thick-film technique, chemical spray pyrolysis and plasma spray coating etc.These processes have a common problem: the thin-film material that promptly is preparation must pass through follow-up high temperature (700 ℃-950 ℃) heat treatment and could obtain high Tc superconductivity.Make not only that by such high-temperature heat treatment generation high temperature solid state reaction its material membrane surface is very coarse, and cause of the diffuse pollution of serious backing material, make available backing material rareness, and price is expensive film.Especially high-temperature heat treatment process is difficult to and the microelectronics process compatible, uses in large scale integrated circuit thereby seriously limited the high Tc superconducting material film, more is difficult to be used for the development of superconducting wire, band.
The object of the present invention is to provide the method for the synthetic high Tc superconducting film of a kind of low temperature, can the direct film forming of low temperature, thus avoid the weak point brought by high-temperature heat treatment.
The present invention is achieved in that with metal organic chemistry vapour phase deposition process (MOCVD): with the volatile metal organic compound is the source.Here the volatile metal organic compound refers to the beta diketone class chelate Ba(DPM of barium, strontium, copper)
2, Sr(DPM)
2, Cu(AA)
2, and Cu(DPM)
2And the chelate Ln(DPM of yttrium and lanthanide series (removing Sm))
3, Ln(PTA)
3And Ln(FOD)
3Wherein, DPM represents two pivaloyl group methane, and AA represents acetylacetone,2,4-pentanedione, and PTA represents the pivaloyl group trifluoroacetone, and FOD is 1,1,1,2,2,3,3, e fluorine 7,7 dimethyl 3,5 heptadione.In chemical vapor deposition reactor, heating makes its volatilization.With the oxygen of suitable flow or the mixture of inert gas and oxygen is carrier gas and reaction medium, and the source steam that volatilizees is carried to the deposit district.Adopting radio frequency or microwave plasma is excitaton source, forms auxiliary chemical vapor deposition (MOCVD) process of low temperature plasma.In plasma environment, metal organic source vapour is decomposed, activates.These have quite high-octane excited state species the deposit reaction take place on the substrate material surface below 400 ℃, directly form high Tc superconduction oxygen compound thin-film material.
Embodiment does a metal organic chemical vapor deposition (mocvd) reactor, has four reative cells, and each room temperature does not wait between 80 °-400 ℃.The solid-state chelate of volatility beta diketone class of barium, yttrium, copper is placed on wherein three chambers respectively, makes its volatilization.Backing material is placed on fourth ventricle (deposit district).Argon gas and oxygen (Ar+O with suitable flow
2) mixture be carrier gas and reaction medium (oxygen partial pressure is 10-80%), with the volatilization source vapour deliver to the deposit district.Adopting radio freqnency generator (or microwave generator) in the deposit district is the plasma exciatiaon source, and the radio freqnency generator frequency is 10.5MHz(or 13.5MHz), power is that 200W(microwave generator frequency is 2450MHz, power is that 0-1.2KW is adjustable).The system total pressure is being that under plasma environment, the deposit reaction takes place on substrate material surface source vapour 0.1-1 torr (being the 1-20 torr under the microwave plasma situation), forms the high Tc superconducting film material under the radio frequency plasma situation.
The inventive method can directly be synthesized high Tc superconducting film at low temperatures, must be through high-temperature heat treatment. Make the high Tc superconducting film material with the inventive method, material forms and phase is easy to accurate control, and deposition rate is fast, and used backing material is extensive, comprises monocrystalline, polycrystalline SrTiO3，ZrO
2，α-Al
2O
3，MgAL
2O
4, MgO, quartz, BaF2, Si, glass etc. With the high Tc superconducting film that the inventive method is made, smooth, there is not obvious interaction with the substrate adhesion-tight. Can with the microelectronics process compatible, in large scale integrated circuit, use. The inventive method also can be used to develop superconducting tape, wire rod, the various high Tc superconducting oxide films that preparation is found recently, as: Sr-La-Cu-O, Sr-Y-Cu-O, Ba-Y-Cu-O, Ba-Ln-Cu-O(Ln are lanthanide series) and their doping system, various complex-shaped devices made.
Claims (2)
1, a kind of hypothermia composition method for high TC supraconduction film material, it is characterized in that this method is with metal organic chemistry vapour phase deposition process (MOCVD): with the volatile metal organic compound is the source, mixture with oxygen or inert gas and oxygen is carrier gas and reaction medium, adopting radio frequency or microwave plasma is excitaton source, form auxiliary metal organic chemical vapor deposition (MOCVD) process of low temperature plasma, be lower than under 400 ℃ of temperature, forming the high Tc superconducting oxide thin-film material in substrate material surface.
2, as method as described in claims 1, it is characterized in that said volatile metal organic compound is meant the beta diketone class chelate Ba(DPM of barium, strontium, copper)
2, Sr(DPM)
2, Cu(AA)
2And Cu(DPM)
2And the chelate Ln(DPM of yttrium and Ln)
3, Ln(PTA)
3And Ln(FOD)
3
Wherein: DPM represents two pivaloyl group methane (promptly 2,2,6,6, tetramethyl 3,5 heptadione)
AA represents acetylacetone,2,4-pentanedione
PTA represents pivaloyl group trifluoroacetone (promptly 1,1,1, trifluoro 2,4 acetyl butyryls)
FOD is 1,1,1,2,2,3,3, e fluorine 7,7 dimethyl 3,5 heptadione
Ln represents lanthanide series (removing Sm)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN88100403A CN1013813B (en) | 1988-01-20 | 1988-01-20 | Hypothermia composition method for high tc supraconduction film material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN88100403A CN1013813B (en) | 1988-01-20 | 1988-01-20 | Hypothermia composition method for high tc supraconduction film material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1034449A true CN1034449A (en) | 1989-08-02 |
| CN1013813B CN1013813B (en) | 1991-09-04 |
Family
ID=4831324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN88100403A Expired CN1013813B (en) | 1988-01-20 | 1988-01-20 | Hypothermia composition method for high tc supraconduction film material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1013813B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302487C (en) * | 2001-06-22 | 2007-02-28 | 株式会社藤仓 | Oxide superconductor and its manufacturing method |
| CN100384716C (en) * | 1998-04-24 | 2008-04-30 | 中部吉利斯德股份有限公司 | Process for producing metal oxide, target comprising the metal oxide for forming thin metal oxide film, process for producing the same, and process for producing thin metal oxide film |
-
1988
- 1988-01-20 CN CN88100403A patent/CN1013813B/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100384716C (en) * | 1998-04-24 | 2008-04-30 | 中部吉利斯德股份有限公司 | Process for producing metal oxide, target comprising the metal oxide for forming thin metal oxide film, process for producing the same, and process for producing thin metal oxide film |
| CN1302487C (en) * | 2001-06-22 | 2007-02-28 | 株式会社藤仓 | Oxide superconductor and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1013813B (en) | 1991-09-04 |
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