CN103443935B8 - 带有增益（ec）的上转换器件和光检测器 - Google Patents

带有增益（ec）的上转换器件和光检测器 Download PDF

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Publication number
CN103443935B8
CN103443935B8 CN201280010508.9A CN201280010508A CN103443935B8 CN 103443935 B8 CN103443935 B8 CN 103443935B8 CN 201280010508 A CN201280010508 A CN 201280010508A CN 103443935 B8 CN103443935 B8 CN 103443935B8
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CN
China
Prior art keywords
photodetector
gain
cml
negative electrode
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201280010508.9A
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English (en)
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CN103443935B (zh
CN103443935A (zh
Inventor
弗兰基·索
金渡泳
布哈本德拉·普拉丹
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University of Florida Research Foundation Inc
Nanoholdings LLC
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University of Florida Research Foundation Inc
Nanoholdings LLC
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Application filed by University of Florida Research Foundation Inc, Nanoholdings LLC filed Critical University of Florida Research Foundation Inc
Priority to CN201610090356.8A priority Critical patent/CN105742395B/zh
Priority claimed from PCT/US2012/026920 external-priority patent/WO2013028232A1/en
Publication of CN103443935A publication Critical patent/CN103443935A/zh
Publication of CN103443935B publication Critical patent/CN103443935B/zh
Application granted granted Critical
Publication of CN103443935B8 publication Critical patent/CN103443935B8/zh
Expired - Fee Related legal-status Critical Current
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Abstract

本发明的实施方案涉及带有增益的IR光检测器，其产生自将电荷倍增层（CML）置于光检测器的阴极和IR敏化层之间，其中在CML处累积的电荷降低了阴极和CML之间的能差以促进电子的注入，这导致了单载子电子元件的增益。本发明的其它实施方案涉及将带有增益的IR光检测器纳入可用在夜视和其它应用中的IR至可见光上转换器件中。
CN201280010508.9A 2011-02-28 2012-02-28 带有增益（ec）的上转换器件和光检测器 Expired - Fee Related CN103443935B8 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610090356.8A CN105742395B (zh) 2011-02-28 2012-02-28 带有增益(ec)的上转换器件和光检测器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161447406P 2011-02-28 2011-02-28
US61/447,406 2011-02-28
PCT/US2012/026920 WO2013028232A1 (en) 2011-02-28 2012-02-28 Photodetector and upconversion device with gain (ec)

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610090356.8A Division CN105742395B (zh) 2011-02-28 2012-02-28 带有增益(ec)的上转换器件和光检测器

Publications (3)

Publication Number Publication Date
CN103443935A CN103443935A (zh) 2013-12-11
CN103443935B CN103443935B (zh) 2016-03-16
CN103443935B8 true CN103443935B8 (zh) 2016-05-11

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1532959A (zh) * 2003-03-18 2004-09-29 ��˹���´﹫˾ P型材料及用于电子器件的混合物
US6972431B2 (en) * 2003-11-26 2005-12-06 Trustees Of Princeton University Multilayer organic photodetectors with improved performance
CN1856888A (zh) * 2003-09-24 2006-11-01 伊斯曼柯达公司 具有非空穴阻挡缓冲层的oled
WO2007017475A1 (de) * 2005-08-08 2007-02-15 Siemens Aktiengesellschaft Organischer photodetektor mit erhöhter empfindlichkeit, sowie verwendung eines triarylmin-fluoren-polymers als zwischenschicht in einem photodetektor
US7300731B2 (en) * 2004-08-10 2007-11-27 E.I. Du Pont De Nemours And Company Spatially-doped charge transport layers
CN101558348A (zh) * 2006-09-29 2009-10-14 佛罗里达大学研究基金公司 用于红外检测和显示的方法和设备
US20100044767A1 (en) * 2001-09-18 2010-02-25 Agere Systems Inc. Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
US20100233842A1 (en) * 2008-04-17 2010-09-16 Epir Technologies, Inc. Method for creating nonequilibrium photodetectors with single carrier species barriers
WO2010120393A2 (en) * 2009-01-12 2010-10-21 The Regents Of The University Of Michigan Enhancement of organic photovoltaic cell open circuit voltage using electron/hole blocking exciton blocking layers
TW201041203A (en) * 2009-05-05 2010-11-16 Univ Nat Chiao Tung Organic photosensitive photoelectric device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100044767A1 (en) * 2001-09-18 2010-02-25 Agere Systems Inc. Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
CN1532959A (zh) * 2003-03-18 2004-09-29 ��˹���´﹫˾ P型材料及用于电子器件的混合物
CN1856888A (zh) * 2003-09-24 2006-11-01 伊斯曼柯达公司 具有非空穴阻挡缓冲层的oled
US6972431B2 (en) * 2003-11-26 2005-12-06 Trustees Of Princeton University Multilayer organic photodetectors with improved performance
US7300731B2 (en) * 2004-08-10 2007-11-27 E.I. Du Pont De Nemours And Company Spatially-doped charge transport layers
WO2007017475A1 (de) * 2005-08-08 2007-02-15 Siemens Aktiengesellschaft Organischer photodetektor mit erhöhter empfindlichkeit, sowie verwendung eines triarylmin-fluoren-polymers als zwischenschicht in einem photodetektor
CN101558348A (zh) * 2006-09-29 2009-10-14 佛罗里达大学研究基金公司 用于红外检测和显示的方法和设备
US20100233842A1 (en) * 2008-04-17 2010-09-16 Epir Technologies, Inc. Method for creating nonequilibrium photodetectors with single carrier species barriers
WO2010120393A2 (en) * 2009-01-12 2010-10-21 The Regents Of The University Of Michigan Enhancement of organic photovoltaic cell open circuit voltage using electron/hole blocking exciton blocking layers
TW201041203A (en) * 2009-05-05 2010-11-16 Univ Nat Chiao Tung Organic photosensitive photoelectric device

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Legal Events

Date Code Title Description
PB01 Publication
SE01 Entry into force of request for substantive examination
GR01 Patent grant
CI01 Correction of invention patent gazette

Correction item: Third inventor

Correct: Pradhan Bhabendra

False: Osama bin Laden, Buhai Bundela

Number: 11

Volume: 32

CI03 Correction of invention patent

Correction item: Third inventor

Correct: Pradhan Bhabendra

False: Osama bin Laden, Buhai Bundela

Number: 11

Page: The title page

Volume: 32

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160316

Termination date: 20210228