CN103441183A - Method for preparing silicon solar cell positive electrode and main grid paste thereof - Google Patents
Method for preparing silicon solar cell positive electrode and main grid paste thereof Download PDFInfo
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- CN103441183A CN103441183A CN2013103439069A CN201310343906A CN103441183A CN 103441183 A CN103441183 A CN 103441183A CN 2013103439069 A CN2013103439069 A CN 2013103439069A CN 201310343906 A CN201310343906 A CN 201310343906A CN 103441183 A CN103441183 A CN 103441183A
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Abstract
The invention discloses a method for preparing a silicon solar cell positive electrode and the main grid paste of the silicon solar cell positive electrode, and relates to the technical field of the manufacturing processes and the materials of electronic devices. The method for preparing the silicon solar cell positive electrode comprises the steps that 1) the electrode of a main grid and the electrode of a thin grid are respectively printed through two times of silk-screen printing; 2) different paste with silver or silver paste is adopted when the electrode of the main grid and the electrode of the thin grid are printed; 3) after sintering, the thickness of the electrode of the main grid is smaller than that of the electrode of the thin grid. The method can ensure the good dispersion of all components, even and soft silver electrode paste is obtained after rolling, and a silicon solar cell product is made to have good, stable and even electrical performance after the sintering.
Description
Technical field:
The present invention relates to manufacturing process and the material technology field thereof of electronic device, be specifically related to a kind of silicon solar cell front electrode main grid slurry.
Background technology:
Development along with photovoltaic industry, photovoltaic solar both domestic and external manufacturer, slurry manufacturer are more and more, the competition trend in market is violent, how to guarantee meeting or improving under the prerequisite of performance requirement of solar battery sheet producer, the competition that effectively reduce the slurry production cost, improves product will become the primary study object of slurry manufacturer.Solar battery sheet manufacturer all adopts the back electrode slurry of low silver content and the graphic designs of change back electrode to reduce silver consuming amount in the electrode aspect overleaf at present, can effectively reduce the production cost of solar energy slurry back electrode; And reduce measuring with slurry of thin grid line by the width dimensions that reduces thin grid line on the one hand for positive electrode manufacturer, but to the printing of positive silver paste the net requirement relatively higher, adopt on the other hand the design of hollow out main grid, to reduce silver slurry consumption, but the soldering reliability when later stage assembly is manufactured can be influential, the long-term stability of using of assembly is brought to risk to a certain degree.
The main grid line of front electrode of solar battery design and thin grid line play not same-action in function.The function of thin grid is mainly to collect the photoelectron stream that battery surface produces due to illumination, and it need to produce with the silicon substrate of battery good ohmic contact.The major function of main grid line is the pad when collecting the electric current of thin grid line and establishment of component being provided, and it need to produce good solder bond power with welding and contact with non-resistance.At present traditional silion cell manufacture adopts a silk-screen printing technique to make front electrode, and its main grid and thin grid are all used silver slurry of the same race, can not give full play to the optimization of two kinds of grid line material functions, the use of wasting again material.
The main grid electrode slurry of available low silver content replaces the main grid of the positive silver of traditional high silver content as the cell piece positive electrode on the other hand, thereby reduce the positive silver-colored consumption of traditional high silver content, reduces production costs.
Again on the one hand, by design of material, combination only occurs with the passivation material (as silicon nitride, silica etc.) of battery surface in the material of main grid slurry after sintering, and good mechanical bond power is provided.But, with the P-N knot material production metallization ohmic contact that forms silion cell, can effectively not reduce battery surface so photoelectronic compound, improve the electricity conversion of battery.
In addition, main grid slurry traditional positive silver paste that compares can further improve the pulling force after welding.
Summary of the invention:
The preparation method who the purpose of this invention is to provide silicon solar cell front electrode and main grid slurry thereof, it can guarantee the dispersiveness that various components are good, obtain the electrode slurry of uniform and smooth silver after rolling, make after sintering that the silicon solar cell product has well, stablizes, electric property uniformly.
In order to solve the existing problem of background technology, silicon solar cell front electrode manufacture method of the present invention is: 1) adopt silk screen printing at twice to print respectively the electrode of main grid and thin grid; 2) adopt respectively different starching containing silver paste or silver when printing main grid and thin gate electrode; 3) thickness of main grid electrode is less than the thickness of thin gate electrode after sintering.
The thickness of described main grid electrode is 5.5 microns to 13 microns.
Combination can occur with the passivation material (as silicon nitride, silica etc.) of battery surface in the material of front electrode main grid slurry of the present invention after sintering, good mechanical bond power is provided, and can produces excellent solder bond power with welding.
The solder bond power that the material of described front electrode main grid slurry produces with welding after sintering is at about 2.0N/mm.
The present invention is under identical sintering condition, and the contact resistance of main grid electrode and silicon substrate is more than 10-500 times of contact resistance of thin gate electrode and silicon substrate.
Composition and the percentage by weight of silicon solar cell positive electrode main grid slurry of the present invention are: the nearly spherical silver powder 60wt%-75wt% of fine particle, the sheet shape silver powder 2.5wt%-10wt% of small particle diameter, glass dust 1wt%-3wt%, organic carrier 15wt%-40wt%.
The particle diameter of the nearly spherical silver powder of described fine particle is 0.5 μ m-2.5 μ m, and tap density is 3.0-4.0g/ml.
The particle diameter of the sheet shape silver powder of described small particle diameter is 2.5～5 μ m, and tap density is 2-3.5g/m1.
Described glass dust is PbO-B
2o
3-SiO
2glass system, softening temperature is at 450 to 550 degree.
Described organic carrier is macromolecule resin and solvent, and its weight percent consists of macromolecule resin 2～4.0wt%, solvent 13～28wt%.
Described macromolecule resin is one or more in ethyl cellulose, acrylic resin.
Described solvent is one or more in terpinol, butyl carbitol ester.
Preparation technology is: after each component is good by formulated, after being uniformly mixed, utilize three-roll grinder fully to grind rolling, reach certain fineness and get final product.
The present invention has following beneficial effect:
1), the use amount of selecting granule silver powder to reduce glass in sintering process just can make silver electrode arrive good crystalline state, thereby reduce glass, too much the impact of silicon chip effectively guaranteed to the stable of properties of product.
2), select the granule silver powder can be in sintering process in the temperature section of 450-600 degree, occur than using the electrode shrinkage phenomenon that bulky grain silver powder or traditional positive silver paste are large (more much smaller than back of the body silver), to reach after main grid electrode sintering because shrinkage character obtains narrower main grid electrode width, thereby effective daylighting area of the solar silicon wafers improved, improve the transformation efficiency of solar energy sheet.
3), select fine particle, nearly ball or crystal formation powder, guaranteeing that slurry has mobility, wetting silicon chip and thin grid contact jaw preferably under high shear forces power, makes thin grid and main grid fully wetting.
4), adopt the sheet shape silver powder of small particle diameter, can give the thixotropic property that slurry is higher on the one hand, adopt on the other hand the small particle diameter flake silver powder more can meet the long-time printing that high order is counted silk screen, reduce the disconnected grid phenomenon of main grid electrode that network blocking or plug net produce, can further improve the solderability that silver electrode surface glossiness after the slurry sintering is conducive to electrode simultaneously.
5), select PbO
2-B
2o
3-SiO
2glass system, can make the glass of slurry low temperature softening point when high temperature sintering fast guarantee that main grid slurry and silicon chip have good wettability, coordinate the selection proportioning of silver powder can effectively suppress the penetration degree to silicon chip inside simultaneously, not only obtain good adhesive force but also guaranteed that silver powder contacts and guarantees photoelectric conversion efficiency with silicon chip formation face.
6), select PbO
2-B
2o
3-SiO
2glass system, make the sintering temperature of main grid slurry will be lower than traditional positive silver paste, therefore at main grid slurry glass during in the softening point state, be conducive to before the silver-colored crystallization of thin grid slurry (under the network open structure electrode densification before) and guarantee that the main grid slurry is to the effective wetting of thin grid, fully make main grid slurry and the carefully combination of gate electrode.
The accompanying drawing explanation:
Fig. 1 is the formula schematic diagram of the embodiment of the present invention;
Fig. 2 is the schematic diagram that the embodiment of the present invention is selected glass formula;
Fig. 3 is embodiment of the present invention properties of product testing result schematic diagram.
Embodiment:
This embodiment silicon solar cell front electrode manufacture method is: 1) adopt silk screen printing at twice to print respectively the electrode of main grid and thin grid; 2) adopt respectively different starching containing silver paste or silver when printing main grid and thin gate electrode; 3) thickness of main grid electrode is less than the thickness of thin gate electrode after sintering.
The thickness of described main grid electrode is 5.5 microns to 13 microns.
Combination can occur with the passivation material (as silicon nitride, silica etc.) of battery surface in the material of front electrode main grid slurry of the present invention after sintering, good mechanical bond power is provided, and can produces excellent solder bond power with welding.
The solder bond power that the material of described front electrode main grid slurry produces with welding after sintering is more than about 2.0N/mm.
The present invention is under identical sintering condition, and the contact resistance of main grid electrode and silicon substrate is more than 10-500 times of contact resistance of thin gate electrode and silicon substrate.
Referring to Fig. 1-2: composition and the percentage by weight of this embodiment silicon solar cell positive electrode main grid slurry are:: the nearly spherical silver powder of fine particle: the sheet shape silver powder 8.5wt% of 60wt%, small particle diameter, glass dust 1.5wt%, organic carrier 30wt%.
The particle diameter of the nearly spherical silver powder of described fine particle is 0.5 μ m-2.5 μ m, and tap density is 3.0-4.0g/m1.
The particle diameter of the sheet shape silver powder of described small particle diameter is 2.5～5 μ m, and tap density is 2-3.5g/ml.
Described glass dust is PbO-B
2o
3-SiO
2glass system, softening temperature is at 450 to 550 degree.
Described organic carrier is macromolecule resin and solvent, and its weight percent consists of macromolecule resin 2～4.0wt%, solvent 13～28wt%.
Described macromolecule resin is one or more in ethyl cellulose, acrylic resin.
Described solvent is one or more in terpinol, butyl carbitol ester.
Preparation technology is: after each component is good by formulated, after being uniformly mixed, utilize three-roll grinder fully to grind rolling, reach certain fineness and get final product.
Referring to Fig. 1: embodiment two: this embodiment adopts following the composition and percentage by weight: the nearly spherical silver powder of fine particle: the sheet shape silver powder 3wt% of 75wt%, small particle diameter, glass dust 2wt%, organic carrier 20wt%.
Referring to Fig. 1: embodiment three: this embodiment adopts following the composition and percentage by weight: the nearly spherical silver powder of fine particle: the sheet shape silver powder 10wt% of 63wt%, small particle diameter, glass dust 2wt%, organic carrier 25wt%.
Referring to Fig. 1: referring to Fig. 1: embodiment four: this embodiment adopts following the composition and percentage by weight: the nearly spherical silver powder of fine particle: the sheet shape silver powder 4wt% of 69wt%, small particle diameter, glass dust 3wt%, organic carrier 24wt%.
Referring to Fig. 1: embodiment five: this embodiment adopts following the composition and percentage by weight: the nearly spherical silver powder of fine particle: the sheet shape silver powder 13wt% of 55wt%, small particle diameter, glass dust 3wt%, organic carrier 29wt%.
Referring to Fig. 1: embodiment six: this embodiment adopts following the composition and percentage by weight: the nearly spherical silver powder of fine particle: the sheet shape silver powder 2wt% of 80t%, small particle diameter, glass dust 3wt%, organic carrier 15wt%.
Embodiment 1: a kind of silicon solar cell positive electrode main grid slurry and preparation method
Referring to Fig. 3, according to No. 1-6 in table 1 formula, after processing, the operations such as adjustment of formula, dispersion, rolling can obtain good dispersion, the main material of composition homogeneous.Metallic conduction powder described in formula is by the nearly spherical silver powder of fine particle footpath 0.5～2.5 μ m, and tap density is at 3.0-4.0g/ml, sheet shape silver powder particle diameter 2～5 μ m of small particle diameter, and tap density is at 2-3.5g/ml, and described glass dust is PbO-B
2o
3-SiO
2glass system.One or more in described macromolecule resin ethyl cellulose, acrylic resin.Described solvent is one or more in terpinol, butyl carbitol ester.The glass formula of selecting in formula, as shown in the 1-6 of Fig. 2, utilizes three-roll grinder fully to grind rolling after material is mixed, and reaches certain fineness.
The main grid electrode slurry made by above-mentioned formula, on the monocrystalline 65 sheet resistance silicon chips that are printed on back electrode and back of the body electric field, first print the main grid slurry by main grid silk screen (325 orders-23um wire diameter) and form the main grid electrode, form thin gate electrode with thin grid silk screen with the printing of PV17A slurry again after drying, form like this positive electrode of silicon solar cell, in chain band sintering furnace, the resulting properties of product testing result of 780 ℃/10S is as shown in table 3, and the silicon solar cell of gained is functional.
Claims (10)
1. silicon solar cell front electrode manufacture method, is characterized in that its manufacture method is: 1) adopt silk screen printing at twice to print respectively the electrode of main grid and thin grid; 2) adopt respectively different starching containing silver paste or silver when printing main grid and thin gate electrode; 3) thickness of main grid electrode is less than the thickness of thin gate electrode after sintering.
2. the preparation method of a kind of silicon solar cell positive electrode main grid slurry according to claim 1, the thickness that it is characterized in that described main grid electrode is 5.5 microns to 13 microns.
3. the preparation method of a kind of silicon solar cell positive electrode main grid slurry according to claim 1, the material that it is characterized in that front electrode main grid slurry of the present invention can be with the passivation material of battery surface (as silicon nitride after sintering, silica etc.) combination occurs, good mechanical bond power is provided, and can produces excellent solder bond power with welding.
4. the preparation method of a kind of silicon solar cell positive electrode main grid slurry according to claim 1, is characterized in that solder bond power that the material of described front electrode main grid slurry produces with welding after sintering is at about 2.0N/mm
above.
5. the preparation method of a kind of silicon solar cell positive electrode main grid slurry according to claim 1, it is characterized in that the present invention is under identical sintering condition, the contact resistance of main grid electrode and silicon substrate is more than 10-500 times of contact resistance of thin gate electrode and silicon substrate.
6. the preparation method of silicon solar cell positive electrode main grid slurry, the composition it is characterized in that and percentage by weight are: the nearly spherical silver powder 60wt%-75wt% of fine particle, the sheet shape silver powder 2.5wt%-10wt% of small particle diameter, glass dust 1wt%-3wt%, organic carrier 15wt%-40wt%.
7. the preparation method of a kind of silicon solar cell positive electrode main grid slurry according to claim 1, the particle diameter that it is characterized in that the nearly spherical silver powder of described fine particle is 0.5 μ m-2.5 μ m, tap density is 3.0-4.0g/m1; The particle diameter of the sheet shape silver powder of described small particle diameter is 2.5～5 μ m, and tap density is 2-3.5g/ml; Described glass dust is PbO-B
2o
3-SiO
2glass system, softening temperature is at 450 to 550 degree; Described organic carrier is macromolecule resin and solvent, and its weight percent consists of macromolecule resin 2～4.0wt%, solvent 13～28wt%.
8. the preparation method of a kind of silicon solar cell positive electrode main grid slurry according to claim 5, is characterized in that described macromolecule resin is one or more in ethyl cellulose, acrylic resin.
9. the preparation method of a kind of silicon solar cell positive electrode main grid slurry according to claim 5, is characterized in that described solvent is one or more in terpinol, butyl carbitol ester.
10. the preparation method of a kind of silicon solar cell positive electrode main grid slurry according to claim 1, it is characterized in that its preparation technology is: after each component is good by formulated, after being uniformly mixed, utilize three-roll grinder fully to grind rolling, reach certain fineness and get final product.
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| CN2013103439069A CN103441183A (en) | 2013-08-06 | 2013-08-06 | Method for preparing silicon solar cell positive electrode and main grid paste thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762225A (en) * | 2014-12-19 | 2016-07-13 | 新奥光伏能源有限公司 | Annealing and preparing method for silicon heterojunction solar battery and battery |
| CN105825912A (en) * | 2016-05-13 | 2016-08-03 | 浙江光达电子科技有限公司 | Silicon solar cell front electrode leadless main grid slurry and preparation method thereof |
| CN106601328A (en) * | 2016-12-21 | 2017-04-26 | 北京市合众创能光电技术有限公司 | Positive silver paste of crystalline silicon solar cell laminated printing and preparation method thereof |
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| CN102270696A (en) * | 2011-05-30 | 2011-12-07 | 合肥海润光伏科技有限公司 | Front electrode secondary overprinting process |
| CN102354545A (en) * | 2011-10-27 | 2012-02-15 | 浙江光达电子科技有限公司 | Sliver electrode slurry for back electric field of silicon solar cell and preparation method thereof |
| CN102729666A (en) * | 2012-06-29 | 2012-10-17 | 陕西众森电能科技有限公司 | Improved secondary printing method for crystalline silicon solar cell |
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2013
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270696A (en) * | 2011-05-30 | 2011-12-07 | 合肥海润光伏科技有限公司 | Front electrode secondary overprinting process |
| CN102354545A (en) * | 2011-10-27 | 2012-02-15 | 浙江光达电子科技有限公司 | Sliver electrode slurry for back electric field of silicon solar cell and preparation method thereof |
| CN102729666A (en) * | 2012-06-29 | 2012-10-17 | 陕西众森电能科技有限公司 | Improved secondary printing method for crystalline silicon solar cell |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762225A (en) * | 2014-12-19 | 2016-07-13 | 新奥光伏能源有限公司 | Annealing and preparing method for silicon heterojunction solar battery and battery |
| CN105825912A (en) * | 2016-05-13 | 2016-08-03 | 浙江光达电子科技有限公司 | Silicon solar cell front electrode leadless main grid slurry and preparation method thereof |
| CN105825912B (en) * | 2016-05-13 | 2017-09-12 | 浙江光达电子科技有限公司 | A kind of unleaded main grid paste of silicon solar cell front electrode and preparation method thereof |
| CN106601328A (en) * | 2016-12-21 | 2017-04-26 | 北京市合众创能光电技术有限公司 | Positive silver paste of crystalline silicon solar cell laminated printing and preparation method thereof |
| CN106601328B (en) * | 2016-12-21 | 2018-03-13 | 北京市合众创能光电技术有限公司 | Positive silver paste of crystal silicon solar energy battery superimposition printing and preparation method thereof |
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Application publication date: 20131211 |
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