CN102910828B - Low-melting point glass powder for silver pastes on fronts of silicon solar cells and preparation method of glass powder - Google Patents
Low-melting point glass powder for silver pastes on fronts of silicon solar cells and preparation method of glass powder Download PDFInfo
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- CN102910828B CN102910828B CN201210474531.5A CN201210474531A CN102910828B CN 102910828 B CN102910828 B CN 102910828B CN 201210474531 A CN201210474531 A CN 201210474531A CN 102910828 B CN102910828 B CN 102910828B
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- 239000011521 glass Substances 0.000 title claims abstract description 88
- 239000000843 powder Substances 0.000 title claims abstract description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 35
- 239000010703 silicon Substances 0.000 title claims abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 23
- 239000004332 silver Substances 0.000 title claims abstract description 23
- 238000002844 melting Methods 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000003723 Smelting Methods 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 37
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 24
- 230000008018 melting Effects 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 3
- 239000005331 crown glasses (windows) Substances 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000011230 binding agent Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 229910003069 TeO2 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000010791 quenching Methods 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000005303 weighing Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 14
- 238000005245 sintering Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000009466 transformation Effects 0.000 description 7
- 239000006117 anti-reflective coating Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 230000003245 working effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000010307 cell transformation Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005308 flint glass Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 229910008423 Si—B Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Abstract
The invention discloses low-melting point glass powder for silver pastes on fronts of silicon solar cells and a preparation method of the glass powder. The low-melting point glass powder is mainly used as a binder for the silver pastes on the fronts of the silicon solar cells and comprises the following components in percentage by weight: 30-60% of Bi2O3, 1.5-18% of B2B3, 1-13% of ZnO, 1-15% of Al2O3, 0.1-6% of BaO, 10-45% of TeO2 and 3-25% of SiO2. The preparation method comprises the steps of: (1) weighing to prepare a mixture; (2) adding the mixture into a crucible and adding a cover for smelting; (3) carrying out water quenching on the smelted glass liquid; (4) drying and crushing; and (5) grading the powder. The prepared glass powder is favorable in conductivity, is capable of decreasing the absorption and the reflection of printed grid lines and electrodes to the sunlight and decreasing the shadow loss of contacting the grid lines and the electrode, has relatively low softening point and low thermal expansion coefficient at the same time and is beneficial for improving the photoelectric conversion efficiency and prolonging the service life of the solar cells.
Description
Technical field
The present invention relates to technical field of electronic materials, especially relate to a kind of crystal silicon solar batteries front side silver paste lead-free glass powder with low melting point and preparation method thereof.
Background technology
Photovoltaic industry is as the Chaoyang industry of 21 century, development prospect is very wide, be subject to the extensive attention of countries in the world, and dropped into a large amount of manpower financial capacities and carry out research and development, the key wherein affecting Solar use efficiency how to improve the efficiency of conversion of solar cell, and the factor affecting conversion efficiency of solar cell mainly comprises battery surface reflection loss, photo-generated carrier compound in contact grid line and the optical loss of the shadow loss of electrode and the non-absorbing of long-wave band and semiconductor surface and body, the body resistance of semi-conductor and metal grid lines and the electricity loss at semiconductor/metal interface.Crystal silicon solar batteries is as the one of solar cell, it is semiconducter device solar energy converting being become electric energy, solar irradiation is on semiconductor p-n junctions, form new hole-electron pair, under the effect of p-n junction electric field, photohole flows to p district by n district, and light induced electron flows to n district by p district and forms electric current, electric current collection is transferred out by grid line and electrode.Crystal silicon solar batteries front electrode and grid line are made up by printing, oven dry, sintering process of conductive silver paste.This conductive silver paste is prepared from by silver powder, glass powder and organic carrier usually.Wherein glass powder liquefies when Fast Sintering, the antireflection film layer on corrosion of silicon surface, makes to form good ohmic contact between silver powder and silicon substrate.The composition of glass powder, content, size and softening temperature can directly affect contact resistance, penetrate antireflective coating ability, the conductivity of electrode and the sticking power between electrode and substrate, also can affect absorption and the reflection of contact grid line and electrode pair sunlight simultaneously, thus affect electricity conversion and the work-ing life of solar cell.
Prepare crystal silicon solar batteries front side silver paste glass powder at present, the leaded P series glass powder such as most employing Pb-Si-B, Pb-B-Zn, it is low that this glass powder has fusing point, good fluidity during high temperature melting, infiltrate good and electrically to the advantage such as reliable and stable with silicon face, be used widely, but lead content is very high, its use causes very large pollution to environment, along with European Union ROSH instruction in 2006 is promulgated, the development trend of electronics manufacturing is that electronic product is unleaded, greenization, and the application of flint glass powder is restricted.And Bi-B system, Zn-B system lead-free glass powder are all not so good as lead glass powder in the wetting property of temperature flowing, glass and substrate.In addition, publication number is that CN101483207A Chinese patent discloses a kind of environment friendly silicon solar cell front gate line electrode silver conductor slurry, select Ba-Zn-B glass frit, can the antireflective coating of melted silicon solar battery sheet silicon face well, silver can be contacted very well with silicon, thus make cell piece have excellent opto-electronic conversion performance, but its glass frit component is more, production control more complicated, glass softening point is high, glass powder particle diameter is comparatively large simultaneously, affects the sintering character of slurry.
Be disclose a kind of lead-free glass powder in CN102126829A Chinese patent at application publication number, its softening temperature, temperature of fusion, thermal expansivity etc. are all suitable for crystal silicon solar batteries front side silver paste, the crystal silicon solar batteries photoelectric conversion rate that the silver slurry of preparation is obtained reaches 17.5%, but do not consider to print grid line and electrode for the absorption of light and gate electrode line shade to the reflex action of light, do not consider that the shade contacting grid line and electrode is on the raising assimilated efficiency of light and the impact of transformation efficiency.The glass powder scope of 0.5 ~ 5um that this patent is preferred simultaneously, does not consider the homogeneity of size-grade distribution and span penetrating and impact that the sticking power of silver powder and silicon substrate and conductivity produce antireflective coating yet.
Summary of the invention
Technical problem to be solved by this invention improves electrode and grid line and electrode shade to the absorption of light and reflection, thus improve the electricity conversion of solar battery sheet.A kind of low-melting point lead-less glasses powder and preparation method thereof is provided, this glass powder substitutes traditional flint glass completely, by controlling glass ingredient, make it to form a kind of glass semiconductor, after making slurry formation electrode, the reflection of printing grid line and electrode pair sunlight can be reduced, minimizing contact grid line and electrode shade are on the impact of light, increase the absorption of grid line and electrode pair light, there is lower softening temperature simultaneously, suitable thermal expansivity and rational size distribution and span, can melt under low temperature and there is good mobility, well can penetrate the antireflective coating of silicon substrate surface, silver-colored crystal and silicon substrate is made to form good ohmic contact, thus improve electricity conversion and the work-ing life of solar cell.
The present invention is achieved through the following technical solutions:
The present invention's one is used for silicon solar cell front side silver paste lead-free low-melting-point glass powder, is Bi by weight percent
2o
330 ~ 60%, B
2o
31.5 ~ 18%, ZnO 1 ~ 13%, Al
2o
31 ~ 15%, BaO 0.1 ~ 6%, TeO
210 ~ 45% and SiO
23 ~ 25% formulated form, and glass powder is glass semiconductor, and softening temperature is 410 ~ 540 DEG C, and thermal expansivity is 56 ~ 75 × 10
-7/ DEG C, particle size range is at 0.3 ~ 4um, and particle size span is less than 1.3.
In Unlead low-smelting point glass component of the present invention, add TeO
2make glass form a kind of glass semiconductor, strengthen the absorption to light, reduce the reflex action to light simultaneously, preferred TeO
2weight percentage is 15 ~ 40%.
Preferably its size scope of described glass powder is 0.3 ~ 4um, and glass powder particle size span is less than 1.3.Its particle diameter form of further preferably described lead-free glass powder with low melting point is spherical.
The preparation method of lead-free glass powder with low melting point of the present invention, comprises the following steps:
(1) take each raw material by weight percentage to mix, this crown glass powder component is by Bi
2o
3, B
2o
3, ZnO, Al
2o
3, BaO, TeO
2and SiO
2composition, each component weight percent content is Bi
2o
330 ~ 60%, B
2o
31.5 ~ 18%, ZnO 1 ~ 13%, Al
2o
31 ~ 15%, BaO 0.1 ~ 6%, TeO
210 ~ 45% and SiO
23 ~ 25%.
(2) compound is added in crucible, crucible is added a cover and puts into globars resistance furnace and add hot smelting;
(3) by melted glass metal shrend;
(4) frit after shrend is dried;
(5) powder is ground into the frit of drying;
(6) classification is carried out to glass powder, obtain fine size, uniform glass powder;
Be compound is put into compound melting crucible and adds a cover in step (2), in electric furnace, add hot smelting, described crucible is platinum crucible, and described melting is heating smelting temperature is 980 ~ 1150 DEG C, soaking time 20 ~ 90min.
In step (5), the grinding mode that powder preferably adopts planetary ball mill to combine with micronizer mill is ground into the frit of drying;
In step (6), air classification equipment is preferably adopted to the equipment that glass powder carries out classification.
Beneficial effect of the present invention is: lead-free glass powder with low melting point provided by the invention is for making crystal silicon solar batteries front side silver paste material as Binder Phase, a kind of glass semiconductor can be formed, after making slurry formation electrode, the reflection of printing grid line and electrode pair sunlight can be reduced, minimizing contact grid line and electrode shade are on the impact of light, increase the absorption of grid line and electrode pair light, there is lower softening temperature simultaneously, low thermal expansivity, there is good mobility, well can penetrate the antireflective coating of silicon substrate surface, silver-colored crystal and silicon substrate is made to form good ohmic contact, and raw material moiety is few, preparation technology is simple, thus be of value to the electricity conversion and work-ing life that improve solar cell.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in detail, and table 1 is the composition proportion of embodiment and the performance index of test.
Embodiment 1
To fill a prescription batching 1000g by embodiment in table 11, and to mix, loaded by compound in platinum crucible, added a cover by platinum crucible and put into globars resistance furnace and add hot smelting, heating smelting temperature is 1050 DEG C, is incubated 30 minutes; The glass metal melted is poured in pure water immediately, forms fine particle after carrying out shrend, dries at ambient pressure in the baking oven of 120 DEG C; Dry glass particle micronizer mill is crushed to particle diameter D90 at below 8um, then adopts ball mill pulverizer to be crushed to below particle diameter D90 to 5um further; The glass powder air-flow extension facility of below the particle diameter 5um obtained is carried out classification, obtained particle diameter is at 0.3 ~ 4um, the low melting glass powder that particle size span is less than 1.3, the various performance parameters of tested glass powder is in table 1, obtained glass powder is added in conductive silver paste by 3% of silver paste gross weight, make crystal silicon solar batteries front electrode and grid line by printing, oven dry, sintering process, the transformation efficiency of test battery sheet, the results are shown in Table 1.
Embodiment 2
To fill a prescription batching 1000g by embodiment in table 12, and to mix, loaded by compound in platinum crucible, added a cover by platinum crucible and put into globars resistance furnace and add hot smelting, heating smelting temperature is 1000 DEG C, is incubated 40 minutes; The glass metal melted is poured in pure water immediately, forms fine particle after carrying out shrend, dries at ambient pressure in the baking oven of 120 DEG C; Dry glass particle micronizer mill is crushed to particle diameter D90 at below 8um, then adopts ball mill pulverizer to be crushed to below particle diameter D90 to 5um further; The glass powder air-flow extension facility of below the particle diameter 5um obtained is carried out classification, obtained particle diameter is at 0.3 ~ 4um, the low melting glass powder that particle size span is less than 1.3, the various performance parameters of tested glass powder is in table 1, obtained glass powder is added in conductive silver paste by 3% of silver paste gross weight, make crystal silicon solar batteries front electrode and grid line by printing, oven dry, sintering process, the transformation efficiency of test battery sheet, the results are shown in Table 1.
Embodiment 3
To fill a prescription batching 1000g by embodiment in table 13, and to mix, loaded by compound in platinum crucible, added a cover by platinum crucible and put into globars resistance furnace and add hot smelting, heating smelting temperature is 1000 DEG C, is incubated 50 minutes; The glass metal melted is poured in pure water immediately, forms fine particle after carrying out shrend, dries at ambient pressure in the baking oven of 120 DEG C; Dry glass particle micronizer mill is crushed to particle diameter D90 at below 8um, then adopts ball mill pulverizer to be crushed to below particle diameter D90 to 5um further; The glass powder air-flow extension facility of below the particle diameter 5um obtained is carried out classification, obtained particle diameter is at 0.3 ~ 4um, the low melting glass powder that particle size span is less than 1.3, the various performance parameters of tested glass powder is in table 1, obtained glass powder is added in conductive silver paste by 3% of silver paste gross weight, make crystal silicon solar batteries front electrode and grid line by printing, oven dry, sintering process, the transformation efficiency of test battery sheet, the results are shown in Table 1.
Embodiment 4
To fill a prescription batching 1000g by embodiment in table 13, and to mix, loaded by compound in platinum crucible, added a cover by platinum crucible and put into globars resistance furnace and add hot smelting, heating smelting temperature is 1100 DEG C, is incubated 20 minutes; The glass metal melted is poured in pure water immediately, forms fine particle after carrying out shrend, dries at ambient pressure in the baking oven of 120 DEG C; Dry glass particle micronizer mill is crushed to particle diameter D90 at below 8um, then adopts ball mill pulverizer to be crushed to below particle diameter D90 to 5um further; The glass powder air-flow extension facility obtaining below 5um particle diameter is carried out classification, obtained particle diameter is at 0.3 ~ 4um, the low melting glass powder that particle size span is less than 1.3, the various performance parameters of tested glass powder is in table 1, obtained glass powder is added in conductive silver paste by 3% of silver paste gross weight, make crystal silicon solar batteries front electrode and grid line by printing, oven dry, sintering process, the transformation efficiency of test battery sheet, the results are shown in Table 1.
Embodiment 5
To fill a prescription batching 1000g by embodiment in table 13, and to mix, loaded by compound in platinum crucible, added a cover by platinum crucible and put into globars resistance furnace and add hot smelting, heating smelting temperature is 1100 DEG C, is incubated 20 minutes; The glass metal melted is poured in pure water immediately, forms fine particle after carrying out shrend, dries at ambient pressure in the baking oven of 120 DEG C; Dry glass particle micronizer mill is crushed to particle diameter D90 at below 8um, ball mill pulverizer is adopted to be crushed to below particle diameter D90 to 5um further again, the glass powder obtained is tested various performance parameters in table 1, obtained glass powder is added in conductive silver paste by 3% of silver paste gross weight, crystal silicon solar batteries front electrode and grid line is made by printing, oven dry, sintering process, the transformation efficiency of test battery sheet, the results are shown in Table 1.
The composition proportion of table 1. embodiment and performance index
As can be seen from table 1 embodiment experimental result, the content of each component of glass powder, particle diameter and form have impact to solar cell transformation efficiency, as the TeO in glass powder
2when content is higher, solar cell transformation efficiency is higher.Comparative example 4,5, and other condition is identical, and example 5 is not by the classification of glass powder, and same technique makes solar cell, and result shows, the solar cell that the glass powder of uniform particle sizes is obtained, and its transformation efficiency is higher.
Below explain in detail and explanation invention has been in conjunction with the embodiments, but those skilled in the art understand, do not departing from spirit and scope of the invention, any change of the embodiment of the present invention, improvement, variant and equivalent are all in the scope of the invention of claims definition.
Claims (6)
1., for a silicon solar cell front side silver paste lead-free low-melting-point glass powder, it is characterized in that by weight percent be Bi
2o
330 ~ 60%, B
2o
31.5 ~ 18%, ZnO 1 ~ 13%, Al
2o
31 ~ 15%, BaO 0.1 ~ 6%, TeO
210 ~ 45% and SiO
23 ~ 25% formulated form, and glass powder is glass semiconductor, and softening temperature is 410 ~ 540 DEG C, and thermal expansivity is 56 ~ 75 × 10
-7/ DEG C, particle size range is at 0.3 ~ 4um, and particle size span is less than 1.3.
2. one according to claim 1 is used for silicon solar cell front side silver paste lead-free low-melting-point glass powder, it is characterized in that: described TeO
2weight percentage is 15 ~ 40%.
3. one according to claim 1 is used for silicon solar cell front side silver paste lead-free low-melting-point glass powder, it is characterized in that: its particle diameter form of described glass powder is spherical.
4., according to a kind of preparation method for silicon solar cell front side silver paste lead-free low-melting-point glass powder according to claim 1, it is characterized in that following these steps to successively process with condition:
(1) take each raw material by weight percentage to mix, this crown glass powder component is by Bi
2o
3, B
2o
3, ZnO, Al
2o
3, BaO, TeO
2and SiO
2composition, each component weight percent content is Bi
2o
330 ~ 60%, B
2o
31.5 ~ 18%, ZnO 1 ~ 13%, Al
2o
31 ~ 15%, BaO 0.1 ~ 6%, TeO
210 ~ 45% and SiO
23 ~ 25%;
(2) compound is added in crucible, crucible is added a cover and puts into globars resistance furnace and add hot smelting;
(3) by melted glass metal shrend;
(4) frit after shrend is dried;
(5) powder is ground into the frit of drying;
(6) classification is carried out to glass powder, obtain fine size, uniform glass powder;
Be compound is put into compound melting crucible and adds a cover in step (2), in electric furnace, add hot smelting, described crucible is platinum crucible, and described melting is heating smelting temperature is 980 ~ 1150 DEG C, soaking time 20 ~ 90min.
5. a kind of preparation method for silicon solar cell front side silver paste lead-free low-melting-point glass powder according to claim 4, is characterized in that being ground into powder to the frit of drying in step (5) adopts the grinding mode that combines with micronizer mill of planetary ball mill.
6. a kind of preparation method for silicon solar cell front side silver paste lead-free low-melting-point glass powder according to claim 4, is characterized in that the equipment employing air classification equipment in step (6), glass powder being carried out to classification.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210474531.5A CN102910828B (en) | 2012-11-21 | 2012-11-21 | Low-melting point glass powder for silver pastes on fronts of silicon solar cells and preparation method of glass powder |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210474531.5A CN102910828B (en) | 2012-11-21 | 2012-11-21 | Low-melting point glass powder for silver pastes on fronts of silicon solar cells and preparation method of glass powder |
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| CN105174728A (en) * | 2014-06-10 | 2015-12-23 | 湖南利德电子浆料有限公司 | Glass powder for crystalline silicon solar cell front silver paste and preparation method thereof |
| CN104058595B (en) * | 2014-07-06 | 2016-06-22 | 吴旦英 | A kind of lead-free glass powder of silver paste of solar cells |
| CN104681122B (en) * | 2015-01-21 | 2017-01-18 | 浙江中希电子科技有限公司 | Silver paste for front surface of solar battery and preparation method of silver paste |
| CN108529889A (en) * | 2018-04-02 | 2018-09-14 | 海宁市丁桥镇永畅知识产权服务部 | A kind of preparation method of solar cell front side silver paste glass powder |
| CN111268915B (en) * | 2018-12-04 | 2023-02-03 | 上海银浆科技有限公司 | Bi-component high-contact glass powder for solar front silver paste |
| CN111875254A (en) * | 2020-07-27 | 2020-11-03 | 上海银浆科技有限公司 | Lead-free glass powder suitable for front silver paste of black silicon + perc battery and preparation method thereof |
| CN113072303A (en) * | 2021-03-29 | 2021-07-06 | 浙江奕成科技有限公司 | Shape changing method of glass powder for solar cell conductive silver paste |
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|---|---|---|---|---|
| CN101068753A (en) * | 2004-12-03 | 2007-11-07 | 3M创新有限公司 | Method of making glass microbubbles and raw product |
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