CN103441062A - Method for preparing Ge component and bandwidth regulated SiGe nanobelt - Google Patents
Method for preparing Ge component and bandwidth regulated SiGe nanobelt Download PDFInfo
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- CN103441062A CN103441062A CN2013104050289A CN201310405028A CN103441062A CN 103441062 A CN103441062 A CN 103441062A CN 2013104050289 A CN2013104050289 A CN 2013104050289A CN 201310405028 A CN201310405028 A CN 201310405028A CN 103441062 A CN103441062 A CN 103441062A
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Abstract
The invention discloses a method for a preparing Ge component and bandwidth regulated SiGe nanobelt and relates to a nano-material. The method comprises the following steps: generating a Si/SiGe/Si structure on an SOI substrate by using a molecular beam epitaxy method or a chemical vapor deposition method; performing exposing and developing on an obtained sample by using holographic laser interferometry, obtaining an optical grating array with a period below 1 [mu] m, etching a pattern by using an ICP dry method and a wet method, and etching a buried layer SiO2 layer with a depth reaching the SOI substrate; and performing selective oxidation and annealing on the sample by using a conventional resistor type heating oxidation furnace, and obtaining the Ge component and bandwidth regulated SiGe nanobelt with a bandwidth reaching below 200 nm. According to the Ge component and bandwidth regulated SiGe nanobelt, the epitaxial Si and SiGe on the SOI substrate are oxidated through a local selective oxidation mode, so that the bandwidth is reduced, Ge components are regulated for preparing and generating a semiconductor material with nanometer scale, and the method is simple, low-cost, and compatible with a silicon conventional process.
Description
Technical field
The present invention relates to a kind of nano material, especially relate to the preparation method of a kind of Ge component and the regulatable SiGe nanobelt of bandwidth.
Background technology
Nano material, as a kind of new material, has been showed good application prospect, at present to mainly concentrating on the aspects such as nanotube, nano wire, nano thin-film, nano composite material the application study focus of nano material.Along with reducing of device size, the physical effects such as quantum limitation effect, coulomb blockade effect can be more and more significant, will be from the new capability of more profound announcement nano semiconductor material, for the application that realizes nano-device lays the first stone.Although at present tentatively realized the partial function of nano-transistor, sensor nano-device, the research of nano-device is still in initial period, from the large-scale integrated of nano-device, also has sizable distance.
The One, Dimensional Semiconductor Nano Materials that silicon nanowires (or nanobelt) is important as a class, there is good application prospect aspect nano-device, can be for preparation ([1] K.-Q.Peng of the nano-devices such as high performance field effect transistors, single electron detector and field emission display, X.Wang, L.Li, Y.Hu, S.-T.Lee, Nano Today, 8 (2013) 75-97; [2] N.Singh, K.D.Buddharaju, S.Manhas, A.Agarwal, S.C.Rustagi, G.Lo, N.Balasubramanian, D.-L.Kwong, Electron Devices, IEEE Transactions on, 55 (2008) 3107-3118.).And the SiGe of Ge material and high-Ge component has high carrier mobility, likely become the channel material of following micro-nano characteristic size integrated circuit metal-insulator semiconductor (MOSFET) device, and introduce strain in Ge, to further improve its carrier mobility and, at the absorption coefficient of optical communicating waveband, obtain high performance strain Ge MOSFET device and opto-electronic device.The existing preparation method about SiGe and Ge nanometer (line) band is mainly deposition process from bottom to up, and it exists, and metal catalytic pollutes, the problems such as nano wire is inhomogeneous, length limited.Another kind of top-down preparation method need adopt the photoetching processes such as electron beam, ion beam, ([3] G.Capellini still has difficulties at aspects such as Ge component (particularly high Ge component) control, preparation efficiencies, G.Kozlowski, Y.Yamamoto, M.Lisker, C.Wenger, G.Niu, P.Zaumseil, B.Tillack, A.Ghrib, M.de Kersauson, M.El Kurdi, P.Boucaud, T.Schroeder, Journal of applied physics, 113 (2013) 013513; [4] Y.Jiang, N.Singh, T.Liow, W.Loh, S.Balakumar, K.Hoe, C.Tung, V.Bliznetsov, S.Rustagi, G.Lo, Electron Device Letters, IEEE, 29 (2008) 595-598; [5] M.Bouwes Bavinck, M.Zielinski, B.J.Witek, T.Zehender, E.P.Bakkers, V.Zwiller, Nano letters, 12 (2012) 6206-6211; [6] S.Hu, Y.Kawamura, K.C.Huang, Y.Li, A.F.Marshall, K.M.Itoh, M.L.Brongersma, P.C.McIntyre, Nano letters, 12 (2012) 1385-1391).
The method of the existing SiGe of preparation and Ge nano-scale structure all exists process conditions to require high, Ge component regulation and control difficulty, difficult and the traditional silicon technique shortcoming such as compatibility mutually.
Summary of the invention
The object of the invention is to that the metal catalytic that the preparation method for the semiconductor nanowires of current existence exists pollutes, the problems such as nano wire is inhomogeneous, length limited, the regulation and control of Ge component, the preparation method of a kind of Ge component and the regulatable SiGe nanobelt of bandwidth is provided.
The present invention includes following steps:
1), on the SOI substrate, by molecular beam epitaxy or chemical vapor deposition method growth one deck Si/SiGe/Si structure, obtain sample after cleaning;
2) sample by the holographic laser interferometric method, step 1) obtained carries out exposure imaging, obtains the grating array of cycle below 1 μ m, utilizes ICP dry method and wet method in conjunction with the etching figure, and etching depth is for arriving the buried regions SiO of SOI substrate
2layer;
3) utilizing conventional resistance-type heated oxide stove to carry out selective oxidation annealing to sample obtains bandwidth and reaches Ge component and the regulatable SiGe nanobelt of bandwidth below 200nm.
In step 1), surperficial Si layer plays the effect that protection Ge runs off in oxidizing process.
In step 3), described selective oxidation is from top and inwardly carry out simultaneously two side, thereby reduces the bandwidth of nanobelt; The Ge component of the SiGe alloy nano band that described selective oxidation obtains, between 0～1, when the Ge component is 1, is prepared the Ge nanobelt; The thickness of described Ge component and the regulatable SiGe nanobelt of bandwidth is 5～50nm, and width is 5～1000nm, and length is more than 10 μ m.
Due to the SiGe nanobelt surrounding formed through oxidation all by SiO
2surround, available HF buffer solution corrosion nanobelt, make it come off from substrate, and described HF buffer solution can adopt BOE solution, BOE solution consist of HF: NH
4f: H
2o=3: 6: 10.
Above-mentioned preparation method can be used in Si based waveguides, Ge/SiGe channel mosfet device and Ge opto-electronic device preparation technology flow process.
The present invention and traditional silicon explained hereafter are compatible mutually, and the Ge component is adjustable, and the SiGe nanobelt that obtains growing when can guarantee crystal mass.The regulatable SiGe nanobelt of Ge component and bandwidth is, by the mode of local selective oxidation, the epitaxy Si on the SOI substrate and SiGe are carried out to oxidation, thereby reduce the semi-conducting material of bandwidth, regulation and control Ge component preparation generation nanoscale, can be for making silica-based waveguides and electronics or opto-electronic device.
The present invention adopts on the SOI substrate epitaxially grown Si/SiGe/Si structure as original material, and the material epitaxy growth is convenient on the one hand, technology maturation, and the time of Material growth is short on the other hand.Due to the optical grating construction etched, in the process of oxidation, the sidewall of bar shaped table top and top layer are simultaneously oxidized, have therefore accelerated the speed of oxidation.The oxidation of SiGe has selective oxidation Si and forms SiO
2, Ge is not oxidized, condenses upon interface and to the buried SiO of substrate
2the characteristics of layer diffusion, thus the suitable time of oxidation generate the most at last the SiGe nanobelt of different Ge components and bandwidth.The present invention be a kind of simple and easy, low-cost, with silicon traditional handicraft compatible preparation Ge component and the new method of the regulatable SiGe nanobelt of bandwidth mutually.
The accompanying drawing explanation
Fig. 1 is the schematic flow sheet that the embodiment of the present invention prepares Ge component and the regulatable SiGe nanobelt of bandwidth.
The SEM test result that Fig. 2 is SiGe nanobelt after oxidation, prepare through snperoxiaized method the SiGe nanobelt that live width is about 200nm as seen.
The Raman spectrum test result that Fig. 3 is high component S iGe nanobelt, obtaining the Ge component by Ge-Ge peak and Si-Ge peak position the Fitting Calculation is 0.92.
Fig. 4 is the SEM test result that the SiGe nanobelt comes off after the BOE solution corrosion, and it is complete that nanobelt keeps.
Embodiment
The present invention is further illustrated in connection with accompanying drawing for following examples.
Fig. 1 provides the schematic flow sheet that the present invention prepares Ge component and the regulatable SiGe nanobelt of bandwidth.Wherein: 1 is silicon substrate, and 2 is SiO
2layer, 3 is silicon on insulator layer; 4 for adopting high vacuum chemical vapor deposition system epitaxial growth Si/SiGe/Si structure; 5 is photoresist; 6 SiO for the oxidation generation
2layer; 7 is the concentrated high-Ge component SiGe nanobelt generated of oxidation.
Epitaxial growth Si/SiGe/Si structure on the SOI substrate; Sample is carried out to the silicon chip standard cleaning, coat the thick photoresist of the about 500nm of thickness; The interference of recycling holographic laser is carried out photoetching and is obtained the following grating array of cycle 1 μ m; Then with ICP dry method and wet method combination, etch into the SiO of buried regions
2layer; Utilize conventional resistance-type heated oxide stove to carry out selective oxidation to sample and obtain the SiGe nanobelt; Finally can as required nanobelt be placed in to BOE solution and corrode reasonable time, make the SiO below nanobelt
2layer also is corroded and causes the nanobelt Automatic-falling, utilize ultrasonic device by its peel off in alcoholic solution with standby.
After oxidation, the SEM test result of SiGe nanobelt, referring to Fig. 2, as seen from Figure 2, prepares through snperoxiaized method the SiGe nanobelt that live width is about 200nm.The Raman spectrum test result of high component S iGe nanobelt is referring to Fig. 3, and obtaining the Ge component by Ge-Ge peak and Si-Ge peak position the Fitting Calculation is 0.92.The SEM test result that the SiGe nanobelt comes off after the BOE solution corrosion is referring to Fig. 4, and as seen from Figure 4, it is complete that nanobelt keeps.
Claims (2)
1. the preparation method of a Ge component and the regulatable SiGe nanobelt of bandwidth is characterized in that comprising the following steps:
1), on the SOI substrate, by molecular beam epitaxy or chemical vapor deposition method growth one deck Si/SiGe/Si structure, obtain sample after cleaning;
2) sample by the holographic laser interferometric method, step 1) obtained carries out exposure imaging, obtains the grating array of cycle below 1 μ m, utilizes ICP dry method and wet method in conjunction with the etching figure, and etching depth is for arriving the buried regions SiO of SOI substrate
2layer;
3) utilizing conventional resistance-type heated oxide stove to carry out selective oxidation annealing to sample obtains bandwidth and reaches Ge component and the regulatable SiGe nanobelt of bandwidth below 200nm.
2. the preparation method of a kind of Ge component and the regulatable SiGe nanobelt of bandwidth as claimed in claim 1, it is characterized in that in step 3), the thickness of described Ge component and the regulatable SiGe nanobelt of bandwidth is 5～50nm, and width is 5～1000nm, and length is more than 10 μ m.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700578A (en) * | 2013-12-27 | 2014-04-02 | 中国科学院微电子研究所 | Manufacturing method of germanium-silicon nano wire laminated structure |
| CN103928297A (en) * | 2013-12-28 | 2014-07-16 | 华中科技大学 | Controllable preparation method of germanium-silicon nano lower-dimension structure and germanium-silicon nano lower-dimension structure |
| US9818761B2 (en) | 2015-06-25 | 2017-11-14 | International Business Machines Corporation | Selective oxidation for making relaxed silicon germanium on insulator structures |
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| CN1146639A (en) * | 1995-09-27 | 1997-04-02 | 南京大学 | Method for preparation of silicon quantum wire using SiGe/Si heterogeneous structure |
| US20130029234A1 (en) * | 2011-07-26 | 2013-01-31 | Samsung Electronics Co., Ltd. | Porous carbonaceous composite material, positive electrode and lithium air battery including porous carbonaceous composite material, and method of preparing the same |
| CN103127944A (en) * | 2013-02-20 | 2013-06-05 | 中国科学技术大学 | Composite nano-grade material and preparation method thereof |
| US20130141769A1 (en) * | 2011-12-05 | 2013-06-06 | Industry-Academic Cooperation Foundation Yonsei University | Micro structure, micro actuators, method of fabricating micro structure and micro actuators |
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2013
- 2013-09-09 CN CN201310405028.9A patent/CN103441062B/en active Active
Patent Citations (4)
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|---|---|---|---|---|
| CN1146639A (en) * | 1995-09-27 | 1997-04-02 | 南京大学 | Method for preparation of silicon quantum wire using SiGe/Si heterogeneous structure |
| US20130029234A1 (en) * | 2011-07-26 | 2013-01-31 | Samsung Electronics Co., Ltd. | Porous carbonaceous composite material, positive electrode and lithium air battery including porous carbonaceous composite material, and method of preparing the same |
| US20130141769A1 (en) * | 2011-12-05 | 2013-06-06 | Industry-Academic Cooperation Foundation Yonsei University | Micro structure, micro actuators, method of fabricating micro structure and micro actuators |
| CN103127944A (en) * | 2013-02-20 | 2013-06-05 | 中国科学技术大学 | Composite nano-grade material and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700578A (en) * | 2013-12-27 | 2014-04-02 | 中国科学院微电子研究所 | Manufacturing method of germanium-silicon nano wire laminated structure |
| CN103700578B (en) * | 2013-12-27 | 2017-03-01 | 中国科学院微电子研究所 | A kind of manufacture method of germanium silicon nanowires laminated construction |
| CN103928297A (en) * | 2013-12-28 | 2014-07-16 | 华中科技大学 | Controllable preparation method of germanium-silicon nano lower-dimension structure and germanium-silicon nano lower-dimension structure |
| CN103928297B (en) * | 2013-12-28 | 2017-04-26 | 华中科技大学 | Controllable preparation method of germanium-silicon nano lower-dimension structure and germanium-silicon nano lower-dimension structure |
| US9818761B2 (en) | 2015-06-25 | 2017-11-14 | International Business Machines Corporation | Selective oxidation for making relaxed silicon germanium on insulator structures |
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