CN103433450A - Method for manufacturing chip integrated unit - Google Patents
Method for manufacturing chip integrated unit Download PDFInfo
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- CN103433450A CN103433450A CN2013103892858A CN201310389285A CN103433450A CN 103433450 A CN103433450 A CN 103433450A CN 2013103892858 A CN2013103892858 A CN 2013103892858A CN 201310389285 A CN201310389285 A CN 201310389285A CN 103433450 A CN103433450 A CN 103433450A
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Abstract
The invention relates to a method for manufacturing a chip integrated unit. The method for manufacturing the chip integrated unit includes the following steps that firstly, a composite material sizing agent is prepared with a stirring method and heated; secondly, a mold core is placed in a casting mold, pre-heated together with the casting mold and then installed on a centrifugal casting machine; thirdly, the centrifugal casting machine is started, pouring is carried out, after pouring is finished, a electromagnetic field generator is started to form a workblank, after the workbank is formed, the centrifugal casting machine and the electromagnetic field generator are shut down, a casting is taken out to be cut and an electronic packaging part workblank is formed; fourthly, the single part workblank is cut open, the mold core is removed and then, the workblank is machined to form electronic packaging parts; fifthly, an electronic chip is installed into the packaging part and meanwhile, a data line is led out of a lead hole, and the two rectangular electronic packaging parts are assembled together to form the chip integrated unit. According to the method for manufacturing the chip integrated unit, particle clusters do not exist in obtained reinforced particles, the obtained reinforced particles are even in distribution and free of slag inclusion pores. Thus, the manufactured chip integrated unit has the advantages of being good in heat conducting performance, low in density, high in heat stability and the like.
Description
Technical field
The present invention relates to the preparation method of a kind of integrated chip unit.
Background technology
Along with the high speed development of information technology, the chip integration in electronic device is more and more higher, and power is increasing, also more and more higher to the thermal diffusivity requirement of encapsulating material.At present, in engineering practice, the W-Cu alloy of extensive use is second generation electronic package material.Adopt the W-Cu alloy to prepare electronic packing part, technical maturity, linear expansion coefficient (5.9-10X10
-6k) low, and the semiconductor chip matching is better.But (150-220W/mK) is lower for its thermal conductivity factor, heat-sinking capability is poor, is not suitable for the application of high-power electronic device; And, its density (15-17g/cm
3) large, in some fields to the density sensitivity, be difficult to be applied, such as fields such as Aero-Space, portable electronic instruments.In addition, the price of W and Cu self is high, causes following process and application cost higher.Since the nineties in last century, be accompanied by the appearance of various High Density Packaging Technology, the high heat conduction of research and development used for sealing electronic device, low bulk, low density metals base composite material parts and forming technique just become the focus in this field.
In the research of the metal-base composites to numerous used for electronic packaging, the aluminum matrix composite performance good with it that the SiC particle strengthens becomes the third generation electronic package material that is expected to substitute the W-Cu alloy most.The aluminium composite material that the SiC particle strengthens has the low (density: 2.8-3.1g/cm of density
3), thermal conductivity good (thermal conductivity factor 240-480W/mK), the high (linear expansion coefficient: 6-15X10 of heat endurance
-6the characteristics such as K).Reported employing SiC particle-reinforced aluminum composite prepares the technology of electronic packing part, mainly contains powder metallurgic method, prefabricated blank method, liquid infiltration, centre spinning etc.Wherein, centre spinning preparation technology is the simplest, and applicable large-scale production, and cost is low.
Adopt centre spinning to prepare the aluminum matrix composite electronic packing part that the SiC particle strengthens, its principle is to utilize the density contrast of SiC and aluminium liquid, the particle segregation that effect by centrifugal force is greater than aluminium liquid by density, in the blank cavity of electronic packing part, forms the particulate reinforced composite part of high-volume fractional.Adopt the method, can reach 40%-75% by the SiC grain volume fraction, and, can as required, by reasonable disposition composite material sizing agent and control centrifugal rotational speed, easily the volume fraction of particle be designed and control.In flospinning, density is less than the gentle direction segregation of steeping oneself-meeting contrary with movement of particles of slag inclusion of aluminium liquid, thereby has guaranteed the cleaning of material.But the method also has a wretched insufficiency part, it is exactly the agglomeration of SiC particle.The existence of cluster of grains, reduced the contact area of particle and aluminum substrate, thereby reduced its thermal conductivity and heat endurance.
Summary of the invention
In view of this, the invention provides the preparation method of a kind of integrated chip unit, the encapsulating parts thermal conductivity that the method makes is good, density is low, heat endurance is high.
The preparation method of rectangle electronic packing part of the present invention specifically comprises the following steps:
Step 1, adopt paddling process prepare composite material sizing agent and composite material sizing agent is heated;
Step 4, cut and remove core pattern by the single part blank, then carries out machining and obtain two rectangle electronic packing parts with fairlead;
Further, in described step 1, composite material sizing agent selects Al-Si to be associated gold for matrix alloy, and strengthening particle is the SiC particle.
Further, the particle diameter of described SiC particle is between 5-80 μ m.
Further, the 20%-40% that the volume fraction of described SiC particle is composite material sizing agent.
Further, in described step 3, the direction in magnetic field is vertical or parallel with the centrifugal casting mould axis direction.
Further, the intensity in described magnetic field is 0.01～0.5T.
Further, described casting mold consists of non-magnet_conductible material.
Further, the preheat temperature of described casting mold is 300-450 ℃.
Further, the temperature of described composite material sizing agent heating is 680-780 ℃.
Further, in described step 3, the rotating speed of centrifugal casting machine is 1000-4000r/min.
Beneficial effect of the present invention is: in the present invention, composite material sizing agent is in the electromagnetic centrifugal Composite Field, and because casting mold and the aluminium composite material that solidified are the non-magnetic material, so it is not subject to the impact of electromagnetic force, still with setting speed, rotates.And during the melt cutting magnetic line, can be subject to being in reverse to the electromagnetic force of casting mold direction of rotation, cause the rotary speed of melt lower than casting mold.Under this stressing conditions, when the process that solidification front moves to internal layer from skin, will be subject to repeatedly washing away of melt, thereby will break up in the cluster of grains at solidification front place, and make it to be uniformly distributed in skin.Use the enhancing particle that this method makes to occur without cluster of grains, a material is evenly distributed, without slag inclusion and pore.Thereby the integrated chip unit made has, thermal conductivity is good, density is low, the heat endurance high.
The accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described;
The formation schematic diagram that Fig. 1 is cluster of grains in centrifugal casting SiC particle-reinforced aluminum composite electronic packing part process;
The casting mold structure figure that Fig. 2 is electromagnetic centrifugal casting shaping SiC particle-reinforced aluminum composite electronic packing part;
Fig. 3 is that core is put schematic diagram;
The refinement schematic diagram that Fig. 4 is cluster of grains in the electromagnetic centrifugal casting forming process;
Fig. 5 is Single Electron encapsulating parts blank drawing after electromagnetic centrifugal casting is shaped;
Fig. 6 is Single Electron encapsulating parts blank B-B face cutaway view after electromagnetic centrifugal casting is shaped;
Fig. 7 is half of integrated chip cellular construction figure (front view) after machining;
Fig. 8 is half of integrated chip cellular construction figure (top view) after machining.
Wherein cluster of grains 1, solidifies part 2, particle 3, and slag inclusion, bubble 4, casting mold 5, die cavity 6, core 7, pilot hole 8, fairlead 9A4 means that electromagnetic force direction A3 means that casting mold direction of rotation B1 means the electromagnetic field direction
The specific embodiment
Hereinafter with reference to accompanying drawing, the preferred embodiments of the present invention are described in detail.
Fig. 1 has disclosed the flospinning principle and the agglomeration that causes (the arrow representative direction of motion separately in figure).After particle 3 moves to skin, solidified part 2 forward positions and limit, its movement velocity can be more and more less, and finally rest on outer a certain position, and now follow-up particle still at outside strata collection, therefore, with the raising of outer grain volume fraction, the reunion of particle will inevitably appear, form cluster of grains 1.
Shown in Fig. 2, casting mold comprises that upper die and lower die, core and alignment pin form.External force guarantees to strengthen particle can assemble in the blank part die cavity, and core is positioned over the die cavity skin.
Fig. 3 is the distribution of core in die cavity.As can be seen from Figure 3, in actual production, can be as required, the number of appropriate design blank cavity, enhance productivity.Mold material is the non-magnetic material, can select the materials such as stainless steel, copper alloy, graphite.
The refinement schematic diagram that Fig. 4 is cluster of grains in the electromagnetic centrifugal casting forming process (the arrow representative direction of motion separately in figure).Its Forming Theory is consistent with single centrifugal casting, and density is greater than the mutually outside die cavity 6 of SiC of aluminium liquid, and density is less than the slag inclusion, bubble 4 of aluminium liquid to inner die cavity.With single centrifugal casting difference, be that the electromagnetic centrifugal shaping is the refinement cluster of grains effectively.As shown in Figure 4, in the electromagnetic centrifugal Composite Field, because casting mold 5 and the aluminium composite material solidified are the non-magnetic material, so it is not subject to the impact of electromagnetic force, still with setting speed, rotates.And during the melt cutting magnetic line, can be subject to being in reverse to the electromagnetic force of casting mold direction of rotation A3, cause the rotary speed of melt lower than casting mold.Under this stressing conditions, when the process that solidification front moves to internal layer from skin, will be subject to repeatedly washing away of melt, thereby will break up in the cluster of grains at solidification front place, and make it to be uniformly distributed in skin.
Embodiment 1:
Raw material: the SiC grain diameter is 60-80 μ m, and matrix is that Al-Si is associated gold, and the volume fraction of SiC particle is 20%.
Step 1, at first adopt paddling process to prepare composite material sizing agent, and be heated to 680-700 ℃ stand-by.
Step 4, cut (shown in Fig. 5 and 6) by single blank part along the B-B face, and remove core 7, then carries out machining and just form electronic packing part as shown in FIG. 7 and 8.Wherein, the front view of the half of encapsulating parts that Fig. 7 shows, what Fig. 8 showed is the top view of encapsulating parts.Due to two half of part full symmetrics of this rectangle electronic packing part, therefore, half of part is not just repeating in addition.
In the present embodiment, the volume fraction of enhancing particle is about 40%.Without cluster of grains, occur, even particle distribution, without slag inclusion and pore.And the last integrated chip unit formed has, and thermal conductivity is good, density is low, the heat endurance high.
Embodiment 2:
With other embodiment, compare, the difference of the present embodiment is, the SiC grain diameter is 40-60 μ m, the volume fraction of SiC particle is 25%, the heating-up temperature of composite material sizing agent is 700-720 ℃, the temperature of casting mold preheating is 350 ℃, and the rotating speed of centrifugal casting machine is 1500r/min, and magnetic field intensity is 0.1T.
In the present embodiment, the volume fraction of enhancing particle is about 50%.Without cluster of grains, occur, even particle distribution, without slag inclusion and pore.And the last integrated chip unit formed has, and thermal conductivity is good, density is low, the heat endurance high.
With other embodiment, compare, the difference of the present embodiment is, the SiC grain diameter is 20-40 μ m, the volume fraction of SiC particle is 30%, the heating-up temperature of composite material sizing agent is 720-740 ℃, the temperature of casting mold preheating is 400 ℃, and the rotating speed of centrifugal casting machine is 2000r/min, and magnetic field intensity is 0.3T.
In the present embodiment, the volume fraction of enhancing particle is about 60%.Without cluster of grains, occur, even particle distribution, without slag inclusion and pore.And the last integrated chip unit formed has, and thermal conductivity is good, density is low, the heat endurance high.
Embodiment 4
With other embodiment, compare, the difference of the present embodiment is, the SiC grain diameter is 10-20 μ m, the volume fraction of SiC particle is 35%, the heating-up temperature of composite material sizing agent is 740-760 ℃, the temperature of casting mold preheating is 400 ℃, and the rotating speed of centrifugal casting machine is 3000r/min, and magnetic field intensity is 0.5T.
In the present embodiment, the volume fraction of enhancing particle is about 70%.Without cluster of grains, occur, even particle distribution, without slag inclusion and pore.And the last integrated chip unit formed has, and thermal conductivity is good, density is low, the heat endurance high.
With other embodiment, compare, the difference of the present embodiment is, the SiC grain diameter is 5-10 μ m, the volume fraction of SiC particle is 40%, the heating-up temperature of composite material sizing agent is 760-780 ℃, the temperature of casting mold preheating is 450 ℃, and the rotating speed of centrifugal casting machine is 4000r/min, and magnetic field intensity is 0.1T.
In the present embodiment, the volume fraction of enhancing particle is about 80%.Without cluster of grains, occur, even particle distribution, without slag inclusion and pore.And the last integrated chip unit formed has, and thermal conductivity is good, density is low, the heat endurance high.
In actual production, can be according to actual needs to the technological parameter of centrifugal casting particulate reinforced composite (as the size of magnetic field and centrifugal rotational speed and and time relationship, the heating-up temperature of composite material sizing agent, casting mold preheat temperature etc.), raw material types and content carries out various adjustment.For example, by adjusting kind, ratio and the centrifugal molding process of matrices of composite material and enhancing particle, can prepare the particle-reinforced gradient composite materials of other kinds, and can realize that enhancement layer is the controlled design of the distribution of cataclysm gradient, enhancement layer thickness; By adjusting matrix and strengthening composition, the centrifugal casting technique of particle or take follow-up rotten treatment process, in the composite material sizing agent preparation process, as required, can add certain trace alloying element (Cu, Ti, Ni, Mn etc.), in order to improve the intensity of matrix alloy.
Finally explanation is, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, above-described embodiment emphasis on analyzing the impact on properties of product of centrifugal force and magnetic field temporal evolution and magnetic field load time, but this does not get rid of the load mode in other centrifugal force and magnetic field, the related personnel can make many variations as required.
Claims (10)
1. the preparation method of an integrated chip unit is characterized in that: specifically comprise the following steps:
Step 1, adopt paddling process prepare composite material sizing agent and composite material sizing agent is heated;
Step 2, be placed in core in casting mold, and after preheating, be arranged on centrifugal casting machine together with casting mold;
Step 3, open centrifugal casting machine and poured into a mould, and after being poured, opening electromagnetic field generator and generate an electromagnetic field, and carries out blank forming, after shaping, closes centrifugal casting machine and electromagnetic field generator, takes out foundry goods cutting, forms the electronic packing part blank;
Step 4, cut and remove core pattern by the single part blank, then carries out machining and obtain two rectangle electronic packing parts with fairlead;
Step 5 by the electronic chip encapsulating parts of packing into, is drawn data wire simultaneously from fairlead, then two rectangle electronic packing parts are assembled together and form the integrated chip unit.
2. the preparation method of integrated chip as claimed in claim 1 unit is characterized in that: in described step 1, composite material sizing agent selects Al-Si to be associated gold for matrix alloy, and strengthening particle is the SiC particle.
3. the preparation method of integrated chip as claimed in claim 2 unit, it is characterized in that: the particle diameter of described SiC particle is between 5-80 μ m.
4. the preparation method of integrated chip unit as claimed in claim 2 or claim 3, is characterized in that: the 20%-40% that the volume fraction of described SiC particle is composite material sizing agent.
5. the preparation method of integrated chip as claimed in claim 1 unit, it is characterized in that: in described step 3, the direction in magnetic field is vertical or parallel with the centrifugal casting mould axis direction.
6. the preparation method of integrated chip as claimed in claim 1 unit, it is characterized in that: the intensity of described electromagnetic field is 0.01～0.5T.
7. the preparation method of integrated chip as claimed in claim 1 unit, it is characterized in that: described casting mold consists of non-magnet_conductible material.
8. the preparation method of integrated chip as claimed in claim 1 unit, it is characterized in that: the preheat temperature of described casting mold is 300-450 ℃.
9. the preparation method of integrated chip as claimed in claim 1 unit is characterized in that: the temperature of described composite material sizing agent heating is 680-780 ℃.
10. the preparation method of integrated chip as claimed in claim 1 unit, it is characterized in that: in described step 3, the rotating speed of centrifugal casting machine is 1000-4000r/min.
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| CN201310389285.8A CN103433450B (en) | 2013-08-30 | 2013-08-30 | A kind of preparation method of integrated chip unit |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1124682A (en) * | 1993-04-10 | 1996-06-19 | 中国科学院金属研究所 | Electromagnetic field centrifugal casting process for metal base composite material |
| CN1257765A (en) * | 1998-12-18 | 2000-06-28 | 中国科学院金属研究所 | Technology for manufacturing seamless alloy pierced billet |
| CN101451203A (en) * | 2008-12-30 | 2009-06-10 | 重庆大学 | Method for preparing SiCp/Al electronic packing part |
| CN102410102A (en) * | 2011-12-05 | 2012-04-11 | 重庆大学 | Authigenic Al3Ni and Si mixed particle aluminium alloy piston for local enhancement and preparation method thereof |
-
2013
- 2013-08-30 CN CN201310389285.8A patent/CN103433450B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1124682A (en) * | 1993-04-10 | 1996-06-19 | 中国科学院金属研究所 | Electromagnetic field centrifugal casting process for metal base composite material |
| CN1257765A (en) * | 1998-12-18 | 2000-06-28 | 中国科学院金属研究所 | Technology for manufacturing seamless alloy pierced billet |
| CN101451203A (en) * | 2008-12-30 | 2009-06-10 | 重庆大学 | Method for preparing SiCp/Al electronic packing part |
| CN102410102A (en) * | 2011-12-05 | 2012-04-11 | 重庆大学 | Authigenic Al3Ni and Si mixed particle aluminium alloy piston for local enhancement and preparation method thereof |
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Granted publication date: 20160420 Termination date: 20180830 |