CN103426830A - Flip-chip-bonded surface-mount shell structure based on low temperature co-fired ceramics - Google Patents
Flip-chip-bonded surface-mount shell structure based on low temperature co-fired ceramics Download PDFInfo
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- CN103426830A CN103426830A CN2013102951134A CN201310295113A CN103426830A CN 103426830 A CN103426830 A CN 103426830A CN 2013102951134 A CN2013102951134 A CN 2013102951134A CN 201310295113 A CN201310295113 A CN 201310295113A CN 103426830 A CN103426830 A CN 103426830A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
The invention provides a flip-chip-bonded surface-mount shell structure based on low temperature co-fired ceramics. The flip-chip-bonded surface-mount shell structure is characterized in that a metal pad area is formed and welded at the bottom of a low temperature co-fired ceramic shell, and the shell is formed by low temperature co-firing with a ceramic substrate. The flip-chip-bonded surface-mount shell structure comprises a ceramic cavity area, a ceramic wire area and a weldable metal pad. The flip-chip-bonded surface-mount shell structure has the advantages that the structure can be made by low temperature co-fired ceramics technology, and changing the ceramic substrate and the sintering process is avoided; the required electrical property is realized through feedback from users, packaging space is reduced effectively, and packaging density is increased; the different cavity structure and metal wire designs allow the structure to adapt to products having different performance requirements; the flip-chip-bonded surface-mount shell structure is widely applicable to low temperature co-fired ceramic shells having many I/O pins.
Description
Technical field
The present invention is surface-mount type shell mechanism and its implementation of a kind of face-down bonding based on LTCC.
Background technology
LTCC (LTCC) technology is a kind of the low-temperature sintered ceramics powder to be made to the accurate and fine and close green band of thickness, on the green band, utilize the techniques such as laser drilling, micropore slip casting, accurate conductor paste printing to make needed circuitous pattern, and a plurality of passive components are imbedded wherein, then overlap together, in 900 ℃ of following temperature ranges, sinter molding goes out the technology of the device of required form.There is good high-frequency and high-Q characteristic, there is temperature characterisitic preferably, less thermal coefficient of expansion and the less good characteristics such as dielectric constant.The face-down bonding technology is a kind of Advanced Packaging, that original lead-in wire is reduced on packaging body and forms pad, and complete the welding with substrates such as PCB by techniques such as SMT, effectively improved electrical property, shortened the distance between chip and substrate, had certain sealing property, the I/O pin is many, effectively increase level of integrated system, promoted present Electronic Packaging industry high-density integrated and microminiaturized trend.Guarantee chip performance for meeting, and to realize the LTCC high-density packages, to develop a kind of ceramic package structure that meets the face-down bonding technology imperative.
Summary of the invention
What the present invention proposed is surface-mount type shell mechanism and its implementation of a kind of face-down bonding based on LTCC, to improve LTCC shell I/O output density, and realizes that direct current is connected or the function of microwave conducting.
Technical solution of the present invention: a kind of surface-mount type shell mechanism of the face-down bonding based on LTCC, but it is characterized in that comprising ceramic alveolus, ceramic wiring district and weld metal pad area, wherein but the ceramic wiring district forms up and down electrical interconnection with ceramic alveolus weld metal pad area respectively by the plated-through hole post and connects, but and is fixed on outside circuit platform by ceramic alveolus or weld metal pad area.
Beneficial effect of the present invention: this structure can realize by LTCC technique, not need to change ceramic matrix and sintering process.By user feedback, realized required electric property, effectively reduced encapsulated space, increased packaging density.By different cavity body structures and metallization wires design, can adapt to the product of different performance requirement, can be widely used in the LTCC shell application of many I/O pin.
The accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1 is a kind of cutaway view of surface-mount type shell mechanism of the face-down bonding based on LTCC.
Fig. 2 is a kind of surface-mount type shell mechanism bottom surface pad figure of the face-down bonding based on LTCC.
Fig. 3 is a kind of surface-mount type shell mechanism case study on implementation of the face-down bonding based on LTCC.
In figure 1 is ceramic wall, the 2nd, and plated-through hole post, the 3rd, metallization wiring, the 4th, step in chamber, the 5th, surface metalation pad, the 6th, die bonding face, the 7th, Bonding face, the 8th, sealing surface.
The A district is ceramic alveolus, realizes in the equal Ke Zaici of die bonding and Bonding district, and is isolated by ceramic wall; The B district is the ceramic wiring district, is chip and outside electrical connection passage, by techniques such as laser drilling commonly used, micropore slip casting, accurate conductor paste printings, realizes; But the C district is the weld metal pad area, but the weld metal pad forms solder side, and realization is connected with external substrate.
Embodiment
The contrast accompanying drawing, a kind of surface-mount type shell mechanism of the face-down bonding based on LTCC, but it is characterized in that at LTCC outer casing bottom moulding weld metal pad area C, by forming in low temperature co-fired process with ceramic matrix, but its shell mechanism comprises ceramic alveolus, ceramic wiring district and weld metal pad area, wherein but the ceramic wiring district forms up and down electrical interconnection with ceramic alveolus weld metal pad area respectively by the plated-through hole post and connects, but is fixed on outside circuit platform by ceramic alveolus or weld metal pad area.
Described ceramic alveolus A consists of step 4 and sealing surface 8 in ceramic wall 1, chip attach district 6, Bonding face 7, chamber, and wherein the surrounding of ceramic wall 1 surrounds chip attach district 6, and in Bonding face 7 and chamber, step 4 is distributed in the surrounding in chip attach district 6; Sealing surface 8 connects ceramic wall 1, and sealing surface 8 is welding ring of upper surface of outer cover, this welding ring and cover plate welding.
Described chip attach district 6 is zones of bonding fixed chip, Bonding face 7 is that the chip upper surface electrode is connected to the gold wire bonding face on ceramic package, in chamber, in 4 chambeies of step, isolate and the distinctive signal transmitting effect, in 1 pair of chamber of pottery wall, chip, device shield, itself and space outerpace are carried out to physical isolation, can wear the plated-through hole post; Sealing surface 8 is welding ring of upper surface of outer cover, by with cover plate, welding and seal in chamber; The Bonding face distributes in the surrounding in chip attach district; can there be Bonding face or chip splice district or individualism in chamber on step; pottery wall surrounding surrounds step in chip attach district, Bonding face and chamber; protect the chip device on it, sealing surface seals step in chip attach district, Bonding face and chamber from upper surface of outer cover.
Realize in the equal Ke Zaici of die bonding and Bonding district, and isolated by ceramic wall; Wherein ceramic cavity provides the installing space of 20mm * 20mm * 3mm for chip, and ceramic cavity is designed to rectangle or circle, shoulder height 2.5mm in ceramic cavity, chip attach district 6 is chip circuit bonding pads, the chip connection is provided, plays a part fixingly simultaneously, step can isolate.
The pottery alveolus is mainly chip, device provides installation region, Bonding and chip attach all can realize in this zone, by laser commonly used, begin to speak to punch, micropore slip casting, the techniques such as accurate conductor paste printing realize, can be made into band partition wall or step, and by sealing surface and substrate or cover plate welding, form the seal protection state with ceramic wall, the pottery alveolus is the main part of whole LTCC surface-mount type shell, the subjectivity property of shell is realized in this zone, embedded chip, device etc., the outer cover plate that connects, substrate, form electrical interconnection by plated-through hole post and ceramic wiring district.
Described ceramic wiring district B comprises metallization wiring 3, plated-through hole post 2 and ceramic matrix; Wherein metallization wiring 3, plated-through hole post 2 are in ceramic matrix, and the live width that the ceramic wiring district forms in the LTCC matrix is 0.1mm.
Ceramic matrix is bearing metal wiring 3 and 2 physical support of plated-through hole post, signal buffer action, metallization wiring 3 is to be embedded in the internal signal cabling of ceramic matrix in ceramic matrix on each plane, and plated-through hole post 2 is the interconnective passages between wiring that metallize on Different Plane in ceramic matrix.
The ceramic wiring district forms electric interconnection circuit and the plated-through hole post that minimum feature is 0.1mm in the LTCC matrix, realizes inner and outside electrical connection.
Ceramic alveolus is accepted in the ceramic wiring district, but outer company weld metal pad area, play a transition role, but connect up and form the electrical connection passage of ceramic alveolus and weld metal pad area with the plated-through hole pole interconnection by metallization, by techniques such as laser drilling commonly used, micropore slip casting, accurate conductor paste printings, realize, but the ceramic wiring district forms electrical interconnection with ceramic alveolus and weld metal pad area respectively up and down by the plated-through hole post.
But described weld metal pad area C, but formed by weld metal pad 5, but but the weld metal pad area is at the weld metal slurry of LTCC lower surface printing user's request shape, but form the weld metal pad of circle, strip, external substrate, device etc. in the LTCC lower surface at the ceramic post sintering slurry.
But weld metal pad area C mainly forms fixing, electrical connection by mode and external substrate, the device of soldering, by techniques such as accurate conductor paste printings, realizes.But the weld metal pad area forms electrical interconnection, external substrate, device etc. by plated-through hole post and ceramic wiring district.
But whole LTCC surface-mount type shell can be fixed on outside circuit platform by ceramic alveolus or weld metal pad area.
This structure can be carried the chip of definite shape, and can realize chip and external isolation; Have and can realize chip and the outside passage be connected; But there is the weld metal pad.
A kind of implementation method of surface-mount type shell mechanism of the face-down bonding based on LTCC is characterized in that: comprises,
1) there is inner chamber and the shell shape of cuboid, cylindrical shape; To meet, the shell direct current is connected or the realization of microwave conducting;
2) LTCC surface metalation pad has the weldability energy;
3) but the internal wiring of the electric interconnection circuit that metallization pattern and weld metal figure in inner chamber are 0.1mm by minimum feature and plated-through hole post is realized interconnection;
4) adopt conventional LTCC technique.
The present invention uses the ceramics green ceramic band to be provided by FERRO company, but the weld metal slurry is FERRO company too, provide, but the weld metal slurry need mate with ceramic matrix when low-temperature sintering is shunk.
The present invention adopts LTCC production Technology commonly used.On the green band accurate and fine and close in size, utilize laser drilling, micropore slip casting, tie, but the technique such as accurate conductor paste printing makes needed circuitous pattern and weld metal layer, utilize the techniques such as laser is begun to speak, lamination to make the ceramic chips of needed definite shape, mold the LTCC surface-mount type shell of definite shape by high precision temperature control stove low-temperature sintering.
In this structure, the weld zone width is in 200 μ m ~ 2mm scope; But the weld metal layer thickness is in 8 μ m ~ 15 μ m scopes.
Embodiment
The present invention is applied to LTCC Surface Mount shell, and the concrete use structure of this LTCC Surface Mount shell as shown in Figure 3.The LTCC Surface Mount shell that will have sealing surface, metallization wire and metallization welded disc by conventional LTCC technique is made, then by functional chip by conducting resin adhesion the die bonding district in the cavity of this LTCC Surface Mount shell, the mode by gold wire bonding is connected together the Bonding face in the circuit on chip and LTCC Surface Mount shell cavity; Mode by soldering seals the sealing surface of cover plate and LTCC Surface Mount shell, forms seal protection; The LTCC Surface Mount shell that to seal again cover plate is connected together by the pad on the Surface Mount shell and the pad on substrate by the mode of soldering.So just formed the assembly with microwave function.
Claims (6)
1. the surface-mount type shell mechanism of the face-down bonding based on LTCC, but it is characterized in that comprising ceramic alveolus, ceramic wiring district and weld metal pad area, but wherein the ceramic wiring district connects with the formation electrical interconnection up and down of ceramic alveolus weld metal pad area respectively by the plated-through hole post, but and be fixed on outside circuit platform by ceramic alveolus or weld metal pad area.
2. a kind of surface-mount type shell mechanism of the face-down bonding based on LTCC as claimed in claim 1, it is characterized in that described ceramic alveolus A consists of step (4) in ceramic wall (1), chip attach district (6), Bonding face (7), chamber and sealing surface (8), wherein the surrounding of ceramic wall (1) surrounds chip attach district (6), and in Bonding face (7) and chamber, step (4) is distributed in the surrounding of chip attach district (6); Sealing surface (8) connects ceramic wall (1), and sealing surface (8) is the welding ring of upper surface of outer cover, and this welding ring and cover plate join.
3. a kind of surface-mount type shell mechanism of the face-down bonding based on LTCC as claimed in claim 1, it is characterized in that the installing space 20mm * 20mm of described ceramic cavity * 3mm, ceramic cavity is rectangle or is circular, shoulder height 2.5mm in ceramic cavity.
4. a kind of surface-mount type shell mechanism of the face-down bonding based on LTCC as claimed in claim 1, is characterized in that described ceramic wiring district B, and its structure comprises metallization wiring (3), plated-through hole post (2) and ceramic matrix; Wherein metallization wiring (3), plated-through hole post (2) are in ceramic matrix, and the live width that the ceramic wiring district forms in the LTCC matrix is 0.1mm.
5. a kind of surface-mount type shell mechanism of the face-down bonding based on LTCC as claimed in claim 1, it is characterized in that but but described weld metal pad area C is comprised of weld metal pad (5), but this weld metal pad area is rounded or strip.
6. the implementation method of the surface-mount type shell mechanism of a kind of face-down bonding based on LTCC as claimed in claim 1, is characterized in that the method comprises,
1) there is inner chamber and the shell shape of cuboid, cylindrical shape; To meet, the shell direct current is connected or the realization of microwave conducting;
2) LTCC surface metalation pad has the weldability energy;
3) but the internal wiring of the electric interconnection circuit that metallization pattern and weld metal figure in inner chamber are 0.1mm by minimum feature and plated-through hole post is realized interconnection;
4) adopt conventional LTCC technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310295113.4A CN103426830B (en) | 2013-07-15 | A kind of surface-mount type shell mechanism of face-down bonding based on LTCC |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310295113.4A CN103426830B (en) | 2013-07-15 | A kind of surface-mount type shell mechanism of face-down bonding based on LTCC |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103426830A true CN103426830A (en) | 2013-12-04 |
| CN103426830B CN103426830B (en) | 2016-11-30 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904038A (en) * | 2014-03-25 | 2014-07-02 | 中国电子科技集团公司第五十五研究所 | Millimeter wave surface mounting type encapsulating outer shell based on low-temperature co-fired ceramic technology |
| CN104766833A (en) * | 2015-04-10 | 2015-07-08 | 中国工程物理研究院电子工程研究所 | Microwave circuit three-dimensional encapsulation structure with circuits arranged on front-back surface of LTCC base plate |
| CN105047632A (en) * | 2014-11-25 | 2015-11-11 | 成都振芯科技股份有限公司 | Minimized high-isolation ceramic packaging structure |
| CN107481997A (en) * | 2017-09-05 | 2017-12-15 | 中国电子科技集团公司第二十九研究所 | A kind of double stacked level Hermetic Package structure and method |
| CN117410238A (en) * | 2023-12-14 | 2024-01-16 | 青岛泰睿思微电子有限公司 | Wire bonding seed ball packaging structure of embedded chip |
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| CN101714543A (en) * | 2009-11-12 | 2010-05-26 | 美新半导体（无锡）有限公司 | Ceramic substrate for three-dimensional packaging of multi-chip system and packaging method thereof |
| US20120267671A1 (en) * | 2011-04-20 | 2012-10-25 | Jung Jung Su | Light emitting device package including uv light emitting diode |
| US20120286319A1 (en) * | 2011-05-13 | 2012-11-15 | Lee Gun Kyo | Light emitting device package and ultraviolet lamp having the same |
| CN203503637U (en) * | 2013-07-15 | 2014-03-26 | 中国电子科技集团公司第五十五研究所 | LTCC flip chip bonding SMT type housing structure |
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101714543A (en) * | 2009-11-12 | 2010-05-26 | 美新半导体（无锡）有限公司 | Ceramic substrate for three-dimensional packaging of multi-chip system and packaging method thereof |
| US20120267671A1 (en) * | 2011-04-20 | 2012-10-25 | Jung Jung Su | Light emitting device package including uv light emitting diode |
| US20120286319A1 (en) * | 2011-05-13 | 2012-11-15 | Lee Gun Kyo | Light emitting device package and ultraviolet lamp having the same |
| CN203503637U (en) * | 2013-07-15 | 2014-03-26 | 中国电子科技集团公司第五十五研究所 | LTCC flip chip bonding SMT type housing structure |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904038A (en) * | 2014-03-25 | 2014-07-02 | 中国电子科技集团公司第五十五研究所 | Millimeter wave surface mounting type encapsulating outer shell based on low-temperature co-fired ceramic technology |
| CN105047632A (en) * | 2014-11-25 | 2015-11-11 | 成都振芯科技股份有限公司 | Minimized high-isolation ceramic packaging structure |
| CN105047632B (en) * | 2014-11-25 | 2017-07-28 | 成都振芯科技股份有限公司 | One kind miniaturization high-isolation ceramic packaging structure |
| CN104766833A (en) * | 2015-04-10 | 2015-07-08 | 中国工程物理研究院电子工程研究所 | Microwave circuit three-dimensional encapsulation structure with circuits arranged on front-back surface of LTCC base plate |
| CN104766833B (en) * | 2015-04-10 | 2017-11-14 | 中国工程物理研究院电子工程研究所 | A kind of microwave circuit three-dimension packaging structure of ltcc substrate positive and negative cloth circuits |
| CN107481997A (en) * | 2017-09-05 | 2017-12-15 | 中国电子科技集团公司第二十九研究所 | A kind of double stacked level Hermetic Package structure and method |
| CN117410238A (en) * | 2023-12-14 | 2024-01-16 | 青岛泰睿思微电子有限公司 | Wire bonding seed ball packaging structure of embedded chip |
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