CN103426801A - Control method of corrosion tank used for solar cell piece texturing - Google Patents
Control method of corrosion tank used for solar cell piece texturing Download PDFInfo
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- CN103426801A CN103426801A CN2013103362334A CN201310336233A CN103426801A CN 103426801 A CN103426801 A CN 103426801A CN 2013103362334 A CN2013103362334 A CN 2013103362334A CN 201310336233 A CN201310336233 A CN 201310336233A CN 103426801 A CN103426801 A CN 103426801A
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- temperature
- etching tank
- etching
- corrosion tank
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Abstract
The invention discloses a control method of a corrosion tank used for solar cell piece texturing, relating to the technical field of methods for changing surface physic characteristics or shapes of a semiconductor material. The control method comprises the following steps of: (1) setting the temperature of the corrosion tank as X DEG C; (2) acquiring the practical temperature of the current corrosion groove as Y DEG C; (3) setting a coefficient alpha based on different corrosive liquids; (4) setting an initial speed of a running rolling wheel of the corrosion tank as V1 m/min; (5) controlling the practical speed of the running rolling wheel of the corrosion tank as V2 m/min, V2=V1+alpha(Y-X). As the speed of the corrosion tank is controlled, and the running speed of the rolling wheel of the corrosion tank is controlled by the practical temperature of the corrosion tank in real time, the control method of the corrosion tank used for the solar cell piece texturing realizes the purpose of steady technology and improves quality as well as photoelectric conversion efficiency of solar cell pieces.
Description
Technical field
The present invention relates to change the surface physical characteristic of semi-conducting material or the method and technology field of shape.
Background technology
The impacts such as the stable efficiency on cell piece of process for etching, quality are very large, at technological coefficients such as equipment air draft, liquid proportion and amount infuseds, arrange in rational situation, the temperature fluctuation of etching tank is very large to etching extent and matte influential effect, thereby causes the fluctuation of cell piece efficiency and quality.Process for etching is exactly the damage layer that utilizes silicon chip, by nitric acid (HNO3) and the mixed solution of hydrofluoric acid (HF), silicon chip surface is carried out to making herbs into wool.Form rugged surface and a large amount of holes at silicon chip surface, increase the light-receiving area on cell piece surface, reduce reflectivity, thereby improve the conversion efficiency of solar cell.
As can be seen from Figure 1, different initial corrosion temperatures, the reaction speed of silicon chip differs greatly, and reaction temperature more high reaction rate is faster.Temperature during due to reaction is not changeless, even more advanced refrigeration machine also difficulty make reaction temperature be fixed on some values, if the impact by temperature on etching extent, with reaction rate, contrasted respectively, can find that reaction rate is directly proportional to temperature, in process of production, in the time of temperature rising or reduction, reduce or improve the reaction time, can realize stablizing the purpose of process for etching.
In process of production, the liquid of silicon chip and etching tank inside carries out chemical reaction, can constantly produce heat, usually etching tank all can connect a refrigeration machine, the temperature that keeps etching tank by refrigeration machine, after process stabilizing, per hour need to carry out the measurement of an etching extent,, by adjusting temperature, etching time (adjusting transmission speed), by the single-sided corrosion degree of depth of silicon chip, be generally the 3.6-4.0 micron.The equipment that the equipment supplier provides at present, control the refrigeration machine of etching tank temperature, the complicated control circuit of main employing, temperature fluctuation range is controlled at ± 0.5 ℃, this refrigeration machine manufacturing cost is high, needs frequent manual fine-tuning desired temperature or deviate, and maintenance cost is high, maintenance difficult, and technique still has than minor swing.
Summary of the invention
Technical problem to be solved by this invention is to provide the control method of a kind of solar battery slice etching with etching tank, described method is controlled etching tank, the speed that the etching tank roller is moved is corroded the control of groove actual temperature in real time, thereby reach the purpose of process stabilizing, improved quality and the photoelectric conversion efficiency of cell piece.
For solving the problems of the technologies described above, the technical solution used in the present invention is: the control method of etching tank for a kind of solar battery slice etching is characterized in that comprising the following steps:
(1) temperature of setting etching tank is X degree centigrade;
(2) actual temperature that gathers current etching tank is Y degree centigrade;
(3) set a factor alpha according to different corrosive liquids;
(4) initial velocity of setting etching tank roller motion is V
1M/min;
(5) actual speed of control etching tank roller motion is V
2M/min, V
2=V
1+ α (Y-X).
Preferably, described actual temperature Y is gathered by temperature sensor.
The beneficial effect that adopts technique scheme to produce is: the temperature of setting etching tank in control system, in the process of being corroded at cell piece, temperature in etching tank there will be fluctuation, control system gathers the actual temperature in etching tank by temperature sensor, simultaneously, can set according to different corrosive liquids the initial velocity of an empirical coefficient α and the motion of etching tank roller in advance in control system, then control system realizes the control to etching tank roller actual speed according to the variations in temperature of etching tank, the etching tank variations in temperature converts the variation of wheel speeds to, thereby reach the purpose that changes etching time.
By using described method, control system requires to reduce to the temperature control precision degree of refrigeration machine, simple domestic refrigeration machine also can meet technological requirement, because control circuit is simple, can significantly reduce acquisition expenses, and refrigeration machine type selecting scope is more wide in range, in use maintenance, repair are more simple, convenient.The actual temperature that the present invention utilizes transducer to detect and the wheel speeds of etching tank (being the time that cell piece is corroded in etching tank) are calculated, realize the real-time control that is subject to actual temperature of wheel speeds of etching tank, thereby reach the purpose of process stabilizing, and then improved quality and the photoelectric conversion efficiency of cell piece.
The accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1 is the schematic diagram of reaction rate under different temperatures in the same etchant solution.
Embodiment
Process for etching mainly comprises three parts: react with the mixed liquor of HNO3 and HF (1): in the making herbs into wool process, at first be that nitric acid is damaging layer and fault location by silicon chip, form silica, then hydrofluoric acid reacts complex compound (H2SiF6) and the water that generates silicon with silica, go like this damage layer to carry out with making herbs into wool simultaneously, thereby shortened technological process.(2) with the KOH solution reaction: the silicon chip after making herbs into wool is through the porous silicon of KOH solution removal silicon chip surface, then process DI water rinses the alkali lye that removes remained on surface.(3) with the mixed liquor of HCl and HF, react: utilize the mixed solution of HF and HCl to remove the impurity such as each metal ion species of silicon chip surface, and rinse acidic surface with DI water, finally with compressed air, silicon chip surface is dried up.
At first, need to be to the transformation of being correlated with of the software of original making herbs into wool control system, control interface in the making herbs into wool control system increases several edit boxes, the temperature, factor alpha, the initial setting speed of etching tank roller and the actual speed of etching tank roller that show respectively etching tank desired temperature, current etching tank increase temperature sensor simultaneously the temperature in etching tank are carried out to Real-time Collection in etching tank.
Control method originally is, at first the temperature of etching tank and the initial velocity of etching tank roller are set in system, add corrosive liquid in etching tank, owing to having added corrosive liquid, temperature in etching tank rises, system is used refrigeration machine to be lowered the temperature to etching tank, gather the temperature in etching tank by transducer, when reaching design temperature, in etching tank, add cell piece to carry out corrosion reaction, after after a while, due to the corrosion reaction release heat, system control refrigeration machine is lowered the temperature again to etching tank, reaches design temperature, until process for etching completes.
The invention discloses the control method of a kind of solar battery slice etching with etching tank, comprise the following steps:
(1) at first, in the control system of making herbs into wool, the temperature of input setting etching tank is X degree centigrade;
(2) actual temperature that gathers current etching tank by temperature sensor is Y degree centigrade, and sends the making herbs into wool control system to;
(3) secondly, according to different corrosive liquids, set a factor alpha, the value of factor alpha is input in control system;
(4) again, the initial velocity of setting etching tank roller motion is V
1M/min and input control system in;
(5) last, control system is controlled the etching tank roller and is moved, and the actual speed of motion is V
2M/min, V
2=V
1+ α (Y-X).
Set the temperature of etching tank in control system, in the process of being corroded at silicon chip, temperature in etching tank there will be fluctuation, control system gathers the actual temperature in etching tank by temperature sensor, simultaneously, can set according to different corrosive liquids the initial velocity of a factor alpha and the motion of etching tank roller in advance in control system, then control system realizes the control to etching tank roller actual speed according to the variations in temperature of etching tank, the etching tank variations in temperature converts the variation of wheel speeds to, thereby reaches the purpose that changes etching time.
Different corrosive liquids has different factor alpha, and the value of factor alpha is determined according to following content: suppose in a certain etchant solution etching tank roller initial velocity V
1Value be 2.0m/min, actual temperature Y is 12 ℃, now reaction rate is the interior etching extent of inherent corrosive liquid of silicon chip of solar cell unit interval that the 0.033g/s(reaction rate refers to standard), set temperature value X is 11.5 ℃, now reaction rate is 0.032g/s, cell body length is 4m, and setting etching extent is 3.84 g.Set etching extent=cell body length/wheel speeds * reaction rate, the variations in temperature reaction rate can and then change, and then etching extent can change.
Etching extent=4/2*60*0.032=3.84g that the etching extent of temperature in the time of 11.5 ℃ set.If with V
1For actual speed, the etching extent actual etching extent=4/2*60*0.033=3.96g of temperature in the time of 12 ℃.If now need to reach the etching extent of setting, actual speed should be V
2=4/ (3.84/0.033/60)=2.0625m/s.According to formula, V
2=V
1+ α (Y-X), can draw α=(V2-V1)/(Y-X)=(2.0625-2)/(12-11.5)=0.125.Can confirm like this factor alpha under this kind of etchant solution=0.125.According to formula: V
2=V
1+ α (Y-X)=2+0.125*(12-11.5)=2.0625.Etching extent after temperature is automatically adjusted in the time of 12 ℃ is: 4/2.0625*60*0.033=3.84g meets the requirement of setting.
Value with factor alpha in above-mentioned corrosive liquid describes for two examples: embodiment mono-, and (1) sets the temperature X=11.5 degree centigrade of etching tank; (2) actual temperature that gathers current etching tank is Y=11.8 degree centigrade; (3) factor alpha in this kind of corrosive liquid=0.125; (4) initial velocity of setting etching tank roller motion is V
1=2 m/mins; (5) according to formula V
2=V
1+ α (Y-X) draws the actual speed V that controls the motion of etching tank roller
2=2+0.125(11.8-11.5)=2.0375 m/mins.
Embodiment bis-, and (2) set the temperature X=11.5 degree centigrade of etching tank; (2) actual temperature that gathers current etching tank is Y=11.9 degree centigrade; (3) factor alpha in this kind of corrosive liquid=0.125; (4) initial velocity of setting etching tank roller motion is V
1=2 m/mins; (5) according to formula V
2=V
1+ α (Y-X) draws the actual speed V that controls the motion of etching tank roller
2=2+0.125(11.9-11.5)=2.05 m/mins.
By using described method, control system requires to reduce to the temperature control precision degree of refrigeration machine, simple domestic refrigeration machine also can meet technological requirement, because control circuit is simple, can significantly reduce acquisition expenses, and refrigeration machine type selecting scope is more wide in range, in use maintenance, repair are more simple, convenient.The actual temperature that the present invention utilizes transducer to detect and the wheel speeds of etching tank (being the time that cell piece is corroded in etching tank) are calculated, realize the real-time control that is subject to actual temperature of wheel speeds of etching tank, thereby reach the purpose of process stabilizing, and then improved quality and the photoelectric conversion efficiency of cell piece.This method is particularly useful for the INTEX wool-weaving machine of German RENA company, and other wool-weaving machines also can be controlled accordingly according to the carrying out of this method.
Applied specific case herein principle of the present invention and execution mode thereof are set forth, the explanation of above embodiment is just with helping understand method of the present invention and core concept thereof.It should be pointed out that for the person of ordinary skill of the art, can also carry out some improvement and modification to the present invention under the premise without departing from the principles of the invention, these improvement and modification also fall in the protection range of the claims in the present invention.
Claims (2)
1. the control method of etching tank for a solar battery slice etching is characterized in that comprising the following steps:
(1) temperature of setting etching tank is X degree centigrade;
(2) actual temperature that gathers current etching tank is Y degree centigrade;
(3) set a factor alpha according to different corrosive liquids;
(4) initial velocity of setting etching tank roller motion is V
1M/min;
(5) actual speed of control etching tank roller motion is V
2M/min, V
2=V
1+ α (Y-X).
2. the control method of etching tank for a kind of solar battery slice etching according to claim 1, is characterized in that described actual temperature Y is gathered by temperature sensor.
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| CN201310336233.4A CN103426801B (en) | 2013-08-05 | 2013-08-05 | A kind of control method of solar battery slice etching etching tank |
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| CN201310336233.4A CN103426801B (en) | 2013-08-05 | 2013-08-05 | A kind of control method of solar battery slice etching etching tank |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050148198A1 (en) * | 2004-01-05 | 2005-07-07 | Technion Research & Development Foundation Ltd. | Texturing a semiconductor material using negative potential dissolution (NPD) |
| CN101740657A (en) * | 2008-11-11 | 2010-06-16 | 徐竹林 | Leaf-type solar wool-making device and method |
| CN102157602A (en) * | 2010-02-11 | 2011-08-17 | 上海思恩电子技术有限公司 | Method for carrying out wet-method phosphorous diffusion and texturing on substrate and acid solution for texturing |
| CN102242402A (en) * | 2011-07-11 | 2011-11-16 | 苏州赤诚洗净科技有限公司 | Texturing device for solar cell silicon wafer |
-
2013
- 2013-08-05 CN CN201310336233.4A patent/CN103426801B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050148198A1 (en) * | 2004-01-05 | 2005-07-07 | Technion Research & Development Foundation Ltd. | Texturing a semiconductor material using negative potential dissolution (NPD) |
| CN101740657A (en) * | 2008-11-11 | 2010-06-16 | 徐竹林 | Leaf-type solar wool-making device and method |
| CN102157602A (en) * | 2010-02-11 | 2011-08-17 | 上海思恩电子技术有限公司 | Method for carrying out wet-method phosphorous diffusion and texturing on substrate and acid solution for texturing |
| CN102242402A (en) * | 2011-07-11 | 2011-11-16 | 苏州赤诚洗净科技有限公司 | Texturing device for solar cell silicon wafer |
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