CN103413839A - AlGaN based ultraviolet detector with double layers of passive films and manufacturing method thereof - Google Patents

AlGaN based ultraviolet detector with double layers of passive films and manufacturing method thereof Download PDF

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Publication number
CN103413839A
CN103413839A CN2013103250822A CN201310325082A CN103413839A CN 103413839 A CN103413839 A CN 103413839A CN 2013103250822 A CN2013103250822 A CN 2013103250822A CN 201310325082 A CN201310325082 A CN 201310325082A CN 103413839 A CN103413839 A CN 103413839A
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passivating film
ultraviolet detector
algan
film
layer
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刘秀娟
张燕
李向阳
王立伟
卢怡丹
常超
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Shanghai Institute of Technical Physics of CAS
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Shanghai Institute of Technical Physics of CAS
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Abstract

The invention discloses an AlGaN based ultraviolet detector with double layers of passive films and a manufacturing method thereof. The double layers of passive films comprise an upper layer of Si3N4 thin film and a lower layer of Si3N4 thin film which are reserved on the surface of a device and the side face of a table board through a photoetching technology. The manufacturing technology is that an method of inductive coupling plasma chemical vapor deposition is used for depositing the two layers of Si3N4 thin films on the surface of the AlGaN based ultraviolet detector and the side face of the table board, first a lower layer Si3N4 thin film with the stress similar to the stress of an AlGaN layer is deposited, then a densified upper layer Si3N4 thin film is deposited, and after the two layers of films are deposited, the two layers of Si3N4 thin films are reserved on the surface of the device and the side face of the table board through a photoetching and etching process. The AlGaN based ultraviolet detector with the double layers of passive films and the manufacturing method thereof have the advantages of low stress, high density and corrosion resistance of the passive films in the AlGaN based ultraviolet detector.

Description

A kind of AlGaN base ultraviolet detector and preparation method with dual layer passivation film
Technical field
The present invention relates to a kind of AlGaN base ultraviolet detector, specifically refer to a kind of preparation method with AlGaN base ultraviolet detector of dual layer passivation film.
Background technology
In the manufacture of AlGaN base ultraviolet detector, because detector generally adopts the structure of mesa, need on the make use etching technics; And the recombination coefficient of material surface is larger, thus etching trailing flank leakage current and surface recombination current all larger, have a strong impact on device performance.Yet, in the side of the surface of the photosensitive unit of device and depletion region, carry out the side surface passivation and can effectively improve Interface Electrical Characteristics, for example reduce the surface depletion sector width, thereby reduce surface density of states, reduce surface recombination velocity.In addition, passivation technology has also been removed the Surface Oxygen element, and surface density of states is reduced, and has improved to a certain extent quantum efficiency and the signal to noise ratio of device.The AlGaN base ultraviolet detector is general at present adopts at device surface and table top side deposition SiO 2Or Si 3N 4Film is done passivating film.With SiO 2Film is compared, Si 3N 4Film is finer and close, has the ability of catching sodium ion, and its anti-radiation performance is than SiO 2High 3-4 times, therefore than SiO 2Film is more suitable in the passivating film as the AlGaN base ultraviolet detector.
In recent years, in semi-conducting material, integrated circuit and photoelectric device manufacturing process, use passivating film deposition means comparatively widely that LPCVD(low pressure chemical vapor deposition is arranged) and PECVD(plasma enhanced chemical vapor deposition).The LPCVD that is 700-900 ℃ with depositing temperature compares, and the PECVD depositing temperature is low (200-400 ℃).In device making technics, if depositing temperature is too high, easily cause the problem such as phase counterdiffusion between fire damage to material, metal melting, each layer, therefore lower depositing temperature is conducive to element manufacturing, but, for AlGaN base ultraviolet detector manufacture craft, the temperature of PECVD method deposition passivating film is still higher; In addition, AlGaN material surface plasma bombardment is more responsive, and can't avoid high-octane plasma bombardment in the PECVD deposition, causes the problems such as AlGaN surface damage, membrane stress be excessive, has had a strong impact on inactivating performance.
Summary of the invention
The object of the invention is to propose a kind of AlGaN base ultraviolet detector with dual layer passivation film, wherein the dual layer passivation film is to adopt the preparation of inductively coupled plasma chemical vapour deposition (CVD) (ICPCVD) method, and lower floor's passivating film is the Si that stress is close with the AlGaN ply stress 3N 4Film, upper strata passivating film are fine and close Si 3N 4Film.Utilize the dual layer passivation membrane structure, solve in the passivation technology of AlGaN base ultraviolet detector, the problem such as bubbling after the device distortion caused because passivating film stress is excessive, annealing, density are lower.
As shown in Figure 1, device architecture is: on Sapphire Substrate 1, be followed successively by AlN resilient coating 2, N-shaped AlGaN layer 3, i type AlGaN layer 4, p-type AlGaN layer 5, the Si of lower floor 3N 4 Passivating film 8, upper strata Si 3N 4Passivating film 9, n Ohm contact electrode 6 are positioned on N-shaped AlGaN layer 3, and p Ohm contact electrode 7 is positioned on p-type AlGaN layer 5.It is characterized in that in table top and the table top side of the structure of AlGaN base ultraviolet detector, two-layer passivating film being arranged, i.e. the Si of lower floor 3N 4 Passivating film 8 and upper strata Si 3N 4Passivating film 9; The described Si of lower floor 3N 4The thickness of passivating film 8 is the 1000-2000 dust, described upper strata Si 3N 4The thickness of passivating film 9 is the 2000-3000 dust.
The described Si of lower floor 3N 4Passivating film is to use inductively coupled plasma chemical vapour deposition (CVD) mode to generate, and the technological parameter during deposition is: 75 ℃ of depositing temperatures, chamber pressure are 10mTorr, and the ICP source power is 550W, gas flow ratio SiH 4: N 2=15.0sccm:12.5sccm, cavity radio frequency RF power is 0W, sedimentation time is 6.5min-13min.
Described upper strata Si 3N 4Passivating film is to use inductively coupled plasma chemical vapour deposition (CVD) mode to generate, and the technological parameter during deposition is: 75 ℃ of depositing temperatures, chamber pressure are 10mTorr, and the ICP source power is 550W, gas flow ratio SiH 4: N 2=16.5sccm:12.5sccm, cavity radio frequency RF power is 5W, sedimentation time is 14min-21min.
The invention has the advantages that:
1 compares with conventional P ECVD or LPCVD deposition process, and during with ICPCVD method deposition passivating film, depositing temperature can be lower than 150 ℃, and the depositing temperature adopted in the present invention is 75 ℃.Lower depositing temperature can solve the deposit film process to the melting of metal level and the problem of the phase counterdiffusion between each layer of device structure in the fire damage of material surface, device.
2 passivating films that adopt are Si 3N 4Duplicature, lower floor is the Si that stress is close with the AlGaN ply stress 3N 4Film, upper strata are the Si that density is high 3N 4Film.Realized so simultaneously the low stress, high-compactness of passivating film, the advantage such as corrosion-resistant, thereby solved in the preparation of AlGaN base ultraviolet detector, due to traditional Si 3N 4The problem such as bubbling after passivating film heavily stressed and the device distortion that causes, annealing.
The accompanying drawing explanation
Fig. 1 is AlGaN base ultraviolet detector spare cross-sectional view in the present invention.
In figure:
1---Sapphire Substrate;
2---the AlN resilient coating;
3---N-shaped AlGaN layer;
4---i type AlGaN layer;
5---p-type AlGaN layer;
6---the n Ohm contact electrode;
7---the p Ohm contact electrode;
8---the Si of lower floor 3N 4Passivating film;
9---upper strata Si 3N 4Passivating film.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the invention method is described in further detail.
Embodiment 1:
Utilize photoetching, etching technics to form AlGaN base ultraviolet detector mesa structure, utilize electron beam evaporation, annealing etc. to make n Ohm contact electrode 6 and p Ohm contact electrode 7.The technique of above employing is AlGaN base ultraviolet detector common process.
On said structure, deposit Si 3N 4The dual layer passivation film, lower floor is the Si that stress is close with the AlGaN ply stress 3N 4Film 8, thickness are 1000 dusts; Upper strata is fine and close Si 3N 4Film 9, thickness are 2000 dusts.This Si 3N 4The dual layer passivation film is to use inductively coupled plasma chemical vapour deposition (CVD) (ICP-CVD) mode to deposit.Deposition step is as follows: (1) deposition Si of lower floor 3N 4Film 8, technological parameter is: 75 ℃ of depositing temperatures, chamber pressure are 10mTorr, the ICP source power is 550W, gas flow ratio SiH 4: N 2=15.0sccm:12.5sccm, cavity radio frequency RF power is 0W.Sedimentation time is 6.5min, and (2) treat the Si of lower floor 3N 4After film generates, deposition upper strata Si 3N 4Film 9, technological parameter is: 75 ℃ of depositing temperatures, chamber pressure are 10mTorr, the ICP source power is 550W, gas flow ratio SiH 4: N 2=16.5sccm:12.5sccm, cavity radio frequency RF power is 5W, and cavity radio frequency RF power is 5W, and sedimentation time is 14min.
By photoetching and etching technics, expose n Ohm contact electrode 6 and p Ohm contact electrode 7, retain the passivating film of device mesa surfaces and side, form the resulting devices structure.
Above-mentioned photoetching, etching mesa structure, electron beam evaporation are common process.
Embodiment 2:
Utilize photoetching, etching technics to form AlGaN base ultraviolet detector mesa structure, utilize electron beam evaporation, annealing etc. to make n Ohm contact electrode 6 and p Ohm contact electrode 7.The technique of above employing is AlGaN base ultraviolet detector common process.
On said structure, deposit Si 3N 4The dual layer passivation film, lower floor is the Si that stress is close with the AlGaN ply stress 3N 4Film 8, thickness are 1500 dusts; Upper strata is fine and close Si 3N 4Film 9, thickness are 2500 dusts.This Si 3N 4The dual layer passivation film is to use inductively coupled plasma chemical vapour deposition (CVD) (ICP-CVD) mode to deposit.Deposition step is as follows: (1) selects growth parameter(s) to be: 75 ℃ of depositing temperatures, chamber pressure are 10mTorr, and the ICP source power is 550W, gas flow ratio SiH 4: N 2=15.0sccm:12.5sccm, cavity radio frequency RF power is 0W, and sedimentation time is 9.75min, and (2) treat the Si of lower floor 3N 4After film generates, the cavity growth parameter(s) is set is: 75 ℃ of depositing temperatures, chamber pressure are 10mTorr, and the ICP source power is 550W, gas flow ratio SiH 4: N 2=16.5sccm:12.5sccm, cavity radio frequency RF power is 5W, and cavity radio frequency RF power is 5W, and sedimentation time is 17.5min.
By photoetching and etching technics, expose n Ohm contact electrode 6 and p Ohm contact electrode 7, retain the passivating film of device mesa surfaces and side, form the resulting devices structure.
Above-mentioned photoetching, etching mesa structure, electron beam evaporation are common process.
Embodiment 3:
Utilize photoetching, etching technics to form AlGaN base ultraviolet detector mesa structure, utilize electron beam evaporation, annealing etc. to make n Ohm contact electrode 6 and p Ohm contact electrode 7.The technique of above employing is AlGaN base ultraviolet detector common process.
On said structure, deposit Si 3N 4The dual layer passivation film, lower floor is the Si that stress is close with the AlGaN ply stress 3N 4Film 8, thickness are 2000 dusts; Upper strata is fine and close Si 3N 4Film 9, thickness are 3000 dusts.This Si 3N 4The dual layer passivation film is to use inductively coupled plasma chemical vapour deposition (CVD) (ICP-CVD) mode to deposit.Deposition step is as follows: (1) selects growth parameter(s) to be: 75 ℃ of depositing temperatures, chamber pressure are 10mTorr, and the ICP source power is 550W, gas flow ratio SiH 4: N 2=15.0sccm:12.5sccm, cavity radio frequency RF power is 0W, and sedimentation time is 13min, and (2) treat the Si of lower floor 3N 4After film generates, the cavity growth parameter(s) is set is: 75 ℃ of depositing temperatures, chamber pressure are 10mTorr, and the ICP source power is 550W, gas flow ratio SiH 4: N 2=16.5sccm:12.5sccm, cavity radio frequency RF power is 5W, and cavity radio frequency RF power is 5W, and sedimentation time is 21min.
By photoetching and etching technics, expose n Ohm contact electrode 6 and p Ohm contact electrode 7, retain the passivating film of device mesa surfaces and side, form the resulting devices structure.
Above-mentioned photoetching, etching mesa structure, electron beam evaporation are common process.
Other parts of the present embodiment are identical with embodiment 1.

Claims (3)

1. AlGaN base ultraviolet detector with dual layer passivation film, device architecture is: on Sapphire Substrate (1), be followed successively by AlN resilient coating (2), N-shaped AlGaN layer (3), i type AlGaN layer (4), p-type AlGaN layer (5), the Si of lower floor 3N 4Passivating film (8), upper strata Si 3N 4Passivating film (9), it is upper that n Ohm contact electrode (6) is positioned at N-shaped AlGaN layer (3), and it is upper that p Ohm contact electrode (7) is positioned at p-type AlGaN layer (5), it is characterized in that, there is two-layer passivating film mesa surfaces and table top side in the structure of AlGaN base ultraviolet detector, i.e. the Si of lower floor 3N 4Passivating film (8) and upper strata Si 3N 4Passivating film (9); The described Si of lower floor 3N 4The thickness of passivating film (8) is the 1000-2000 dust, described upper strata Si 3N 4The thickness of passivating film (9) is the 2000-3000 dust.
2. a kind of AlGaN base ultraviolet detector with dual layer passivation film according to claim 1, is characterized in that the described Si of lower floor 3N 4Passivating film (8) adopts inductively coupled plasma chemical vapour deposition (CVD) mode to prepare, and the technological parameter during deposition is: 75 ℃ of depositing temperatures, chamber pressure are 10mTorr, and the ICP source power is 550W, gas flow ratio SiH 4: N 2=15.0sccm:12.5sccm, cavity radio frequency RF power is 0W, sedimentation time is 6.5min-13min.
3. a kind of AlGaN base ultraviolet detector with dual layer passivation film according to claim 1, is characterized in that described upper strata Si 3N 4Passivating film (9) adopts inductively coupled plasma chemical vapour deposition (CVD) mode to prepare, and the technological parameter during deposition is: 75 ℃ of depositing temperatures, chamber pressure are 10mTorr, and the ICP source power is 550W, gas flow ratio SiH 4: N 2=16.5sccm:12.5sccm, cavity radio frequency RF power is 5W, sedimentation time is 14min-21min.
CN2013103250822A 2013-07-30 2013-07-30 AlGaN based ultraviolet detector with double layers of passive films and manufacturing method thereof Pending CN103413839A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106952969A (en) * 2017-03-08 2017-07-14 中山大学 A kind of group III-nitride photodetector passivating film and preparation method thereof
CN110444607A (en) * 2019-07-10 2019-11-12 中国科学院上海技术物理研究所 Extensive indium gallium-arsenium coke plane detector and preparation method with stress equilibrium layer
CN111933722A (en) * 2020-09-27 2020-11-13 常州纵慧芯光半导体科技有限公司 Photoelectric detector and preparation method

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US20050221628A1 (en) * 2004-03-30 2005-10-06 Eudyna Devices Inc. Semiconductor device and method of fabricating the same
US7067853B1 (en) * 2004-08-26 2006-06-27 Jie Yao Image intensifier using high-sensitivity high-resolution photodetector array
US20090101919A1 (en) * 2007-10-11 2009-04-23 Jie Yao Photo-Detector Array, Semiconductor Image Intensifier And Methods Of Making And Using The Same
CN101814537A (en) * 2009-02-19 2010-08-25 中国科学院半导体研究所 Gallium nitride based avalanche detector and preparation method thereof
CN203456486U (en) * 2013-07-30 2014-02-26 中国科学院上海技术物理研究所 AlGaN-based ultraviolet detector with double layers of passive films

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050221628A1 (en) * 2004-03-30 2005-10-06 Eudyna Devices Inc. Semiconductor device and method of fabricating the same
US7067853B1 (en) * 2004-08-26 2006-06-27 Jie Yao Image intensifier using high-sensitivity high-resolution photodetector array
US20090101919A1 (en) * 2007-10-11 2009-04-23 Jie Yao Photo-Detector Array, Semiconductor Image Intensifier And Methods Of Making And Using The Same
CN101814537A (en) * 2009-02-19 2010-08-25 中国科学院半导体研究所 Gallium nitride based avalanche detector and preparation method thereof
CN203456486U (en) * 2013-07-30 2014-02-26 中国科学院上海技术物理研究所 AlGaN-based ultraviolet detector with double layers of passive films

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106952969A (en) * 2017-03-08 2017-07-14 中山大学 A kind of group III-nitride photodetector passivating film and preparation method thereof
CN110444607A (en) * 2019-07-10 2019-11-12 中国科学院上海技术物理研究所 Extensive indium gallium-arsenium coke plane detector and preparation method with stress equilibrium layer
CN111933722A (en) * 2020-09-27 2020-11-13 常州纵慧芯光半导体科技有限公司 Photoelectric detector and preparation method

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Application publication date: 20131127