CN103412695B - The capacitive touch screen of OGS structure - Google Patents
The capacitive touch screen of OGS structure Download PDFInfo
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- CN103412695B CN103412695B CN201310309552.6A CN201310309552A CN103412695B CN 103412695 B CN103412695 B CN 103412695B CN 201310309552 A CN201310309552 A CN 201310309552A CN 103412695 B CN103412695 B CN 103412695B
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Abstract
The invention discloses the capacitive touch screen of a kind of OGS structure, including substrate, electrode layer, key area and protective layer on the substrate is set；Being provided with induction point in described key area, described induction point includes the first sense node by lead-in wire laterally conducting and the second sense node；Described lead-in wire electrically connects away from one end of described second sense node with described first sense node, and described lead-in wire electrically connects away from one end of described first sense node with described second sense node.First sense node and the second sense node are laterally turned on by the capacitive touch screen of this OGS structure by lead-in wire, completing the conducting between sense node relative to the capacitive touch screen of traditional OGS structure by mean breadth MOALMO electric bridge about 10 μm or mean breadth ITO electric bridge between 50～100 μm, the capacitive touch screen of this OGS structure is less likely to occur to damage.
Description
Technical field
The present invention relates to display device field, particularly to the capacitive touch screen of a kind of OGS structure.
Background technology
Capacitive touch screen is widely used in various information display product as a kind of emerging information input mode,
Such as touch-screen mobile phone, GPS navigation system etc..
OGS (One Glass Solution) technique, it is simply that touch-control glass (Touch Sensor) and protection glass
(Cover Glass) integrates, that is plates ITO conductive layer at general protection glass inner side, makes this list
Sheet glass not only possesses the protection intensity of glass, safety, also has touch controllable function concurrently simultaneously.
The capacitive touch screen of traditional OGS structure, can design touch-sensitive area in key area, play by
The effect of key touch sensible, and in touch-sensitive area, typically can connect adjacent sensing by electric bridge and save
Point.But, owing to electric bridge is the most comparatively fine, wherein, the mean breadth of MOALMO electric bridge is in 10 μm
Left and right, the mean breadth of ITO electric bridge is between 50～100 μm, and key area uses frequency higher simultaneously,
It is easily caused the damage of electric bridge, so that the capacitive touch screen of traditional OGS structure is susceptible to damage.
Summary of the invention
Based on this, it is necessary to provide a kind of be less likely to occur damage OGS structure capacitive touch screen and
Preparation method.
A kind of capacitive touch screen of OGS structure, including substrate, arrange electrode layer on the substrate,
It is arranged on the key area of described substrate edges and is arranged on the protective layer on described electrode layer；
Described electrode layer includes first direction electrode, second direction electrode and multiple connecting bridge, described first
Direction electrode and described second direction electrode are separated by multiple described connecting bridges and keep insulation；
Described key area is adjacent with described electrode layer, is provided with induction point, described sensing in described key area
Point includes the first sense node by lead-in wire laterally conducting and the second sense node；
Described lead-in wire electrically connects away from one end of described second sense node with described first sense node, and
Described lead-in wire electrically connects away from one end of described first sense node with described second sense node.
In one embodiment, described lead-in wire is MoAlMo lead-in wire.
In one embodiment, the material of described connecting bridge is ITO, Ag, Cu or MOALMO.
In one embodiment, the material of described protective layer is photoresists.
In one embodiment, described photoresists are organic insulator.
In one embodiment, the material of described first direction electrode and described second direction electrode is ITO.
The capacitive touch screen of this OGS structure is by going between horizontal to the first sense node and the second sense node
To conducting, pass through mean breadth about 10 μm relative to the capacitive touch screen of traditional OGS structure
MOALMO electric bridge or mean breadth ITO electric bridge between 50～100 μm complete between sense node
Conducting, the capacitive touch screen of this OGS structure be less likely to occur damage.
Accompanying drawing explanation
Fig. 1 is the generalized section of the capacitive touch screen of an embodiment；
Fig. 2 is the front schematic view of the capacitive touch screen that Fig. 1 shows；
Fig. 3 is the structural representation of the induction point of capacitive touch screen as shown in Figure 1.
Detailed description of the invention:
For the ease of understanding the present invention, below with reference to relevant drawings, the present invention is described more fully.
Accompanying drawing gives presently preferred embodiments of the present invention.But, the present invention can come real in many different forms
Existing, however it is not limited to embodiment described herein.On the contrary, providing the purpose of these embodiments is to make this
The understanding of disclosure of the invention content is more thorough comprehensively.
It should be noted that when element is referred to as " being fixed on " another element, and it can be directly at another
On individual element or element placed in the middle can also be there is.When an element is considered as " connection " another yuan
Part, it can be directly to another element or may be simultaneously present centering elements.Used herein
Term " vertical ", " level ", "left", "right" and similar statement simply to illustrate that mesh
's.
Unless otherwise defined, all of technology used herein and scientific terminology and the technology belonging to the present invention
The implication that the technical staff in field is generally understood that is identical.The art used the most in the description of the invention
Language is intended merely to describe the purpose of specific embodiment, it is not intended that in limiting the present invention.Used herein
Term " and/or " include the arbitrary and all of combination of one or more relevant Listed Items.
As depicted in figs. 1 and 2, the capacitive touch screen of the OGS structure of an embodiment, including substrate 10,
Electrode layer 20 on the substrate 10 is set, is arranged on the key area 30 at substrate 10 edge and is arranged on electricity
Protective layer 40 on pole layer 20.
The material of substrate 10 can be ultra-thin glass.
Electrode layer 20 includes first direction electrode 22, second direction electrode 24 and multiple connecting bridge 26, the
One direction electrode 22 and second direction electrode 24 are separated by multiple connecting bridges 26 and keep insulation.
First direction electrode 22 and second direction electrode 24 extend one another along uneven both direction.
The material of connecting bridge 26 is ITO, Ag, Cu or MOALMO.
The material of first direction electrode 22 and second direction electrode 24 is ITO.
In conjunction with Fig. 2 and Fig. 3, key area 30 is adjacent with electrode layer 20, is provided with induction point in key zone 30
32。
Induction point 32 includes the first sense node 324 and the second sense node by lead-in wire 322 laterally conducting
326。
In present embodiment, lead-in wire 322 and the first sense node 324 are away from the one of the second sense node 326
End electrical connection, and it is 322 electric away from one end of the first sense node 324 with the second sense node 326 to go between
Connect, thus by lead-in wire 322, first sense node 324 and the second sense node 326 are laterally turned on.
Lead-in wire 322 goes between for MoAlMo.
In present embodiment, the material of protective layer 40 is photoresists.
Photoresists can be organic insulator.
The thickness of protective layer 40 is 1 μm～3 μm.
First sense node 324 and second is felt by the capacitive touch screen of this OGS structure by lead-in wire 322
Answer node 326 laterally to turn on, existed by mean breadth relative to the capacitive touch screen of traditional OGS structure
MOALMO electric bridge or mean breadth ITO electric bridge between 50～100 μm about 10 μm complete
Conducting between sense node, the capacitive touch screen of this OGS structure is less likely to occur to damage.
Additionally, use lead-in wire 322 to replace electric bridge, it is also possible to reduce technology difficulty, it is to avoid key area
The electrostatic problem of electric bridge, improves the nonexpondable reliability of touch screen.
Embodiment described above only have expressed one or more embodiments of the present invention, and its description is the most concrete
In detail, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that, it is right
For those of ordinary skill in the art, without departing from the inventive concept of the premise, it is also possible to if making
Dry deformation and improvement, these broadly fall into protection scope of the present invention.Therefore, the protection domain of patent of the present invention
Should be as the criterion with claims.
Claims (6)
1. the capacitive touch screen of an OGS structure, it is characterised in that include substrate, be arranged on described
Electrode layer on substrate, it is arranged on the key area of described substrate edges and is arranged on described electrode layer
Protective layer；
Described electrode layer includes first direction electrode, second direction electrode and multiple connecting bridge, described first
Direction electrode and described second direction electrode are separated by multiple described connecting bridges and keep insulation；
Described key area is adjacent with described electrode layer, is provided with induction point, described sensing in described key area
Point includes the first sense node by lead-in wire laterally conducting and the second sense node；
Described lead-in wire electrically connects away from one end of described second sense node with described first sense node, and
Described lead-in wire electrically connects away from one end of described first sense node with described second sense node；
Described lead-in wire is circumferentially positioned at described first sense node and the outside of described second sense node.
The capacitive touch screen of OGS structure the most according to claim 1, it is characterised in that described
Go between and go between for MoAlMo.
The capacitive touch screen of OGS structure the most according to claim 1, it is characterised in that described
The material of connecting bridge is ITO, Ag, Cu or MOALMO.
The capacitive touch screen of OGS structure the most according to claim 1, it is characterised in that described
The material of protective layer is photoresists.
The capacitive touch screen of OGS structure the most according to claim 4, it is characterised in that described
Photoresists are organic insulator.
6. the capacitive touch screen of OGS structure as claimed in claim 1, it is characterised in that described the
The material of one direction electrode and described second direction electrode is ITO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310309552.6A CN103412695B (en) | 2013-07-22 | 2013-07-22 | The capacitive touch screen of OGS structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310309552.6A CN103412695B (en) | 2013-07-22 | 2013-07-22 | The capacitive touch screen of OGS structure |
Publications (2)
| Publication Number | Publication Date |
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| CN103412695A CN103412695A (en) | 2013-11-27 |
| CN103412695B true CN103412695B (en) | 2016-12-28 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102609100A (en) * | 2012-01-17 | 2012-07-25 | 苏州达方电子有限公司 | Touch keyboard |
| CN102629178A (en) * | 2012-04-27 | 2012-08-08 | 深圳莱宝高科技股份有限公司 | Panel structure and manufacture method thereof |
| US8410795B1 (en) * | 2012-03-16 | 2013-04-02 | Cypress Semiconductor Corporation | Serpentine touch sensor pattern |
| CN103092414A (en) * | 2013-01-17 | 2013-05-08 | 北京京东方光电科技有限公司 | External type touch screen, manufacturing method thereof and display device |
| CN203366305U (en) * | 2013-07-22 | 2013-12-25 | 深圳南玻伟光导电膜有限公司 | Capacitive touch screen of OGS structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110101027A (en) * | 2010-05-19 | 2011-09-15 | 삼성전기주식회사 | Touch screen |
-
2013
- 2013-07-22 CN CN201310309552.6A patent/CN103412695B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102609100A (en) * | 2012-01-17 | 2012-07-25 | 苏州达方电子有限公司 | Touch keyboard |
| US8410795B1 (en) * | 2012-03-16 | 2013-04-02 | Cypress Semiconductor Corporation | Serpentine touch sensor pattern |
| CN102629178A (en) * | 2012-04-27 | 2012-08-08 | 深圳莱宝高科技股份有限公司 | Panel structure and manufacture method thereof |
| CN103092414A (en) * | 2013-01-17 | 2013-05-08 | 北京京东方光电科技有限公司 | External type touch screen, manufacturing method thereof and display device |
| CN203366305U (en) * | 2013-07-22 | 2013-12-25 | 深圳南玻伟光导电膜有限公司 | Capacitive touch screen of OGS structure |
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| Publication number | Publication date |
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| CN103412695A (en) | 2013-11-27 |
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Effective date of registration: 20160127 Address after: 443005 No. 38, Dalian Road, Yichang, Hubei Applicant after: YICHANG NANBO DISPLAY DEVICES CO., LTD. Address before: 518000 Guangdong Province, Shenzhen high tech Zone of Nanshan District City, No. three North Road, CSG Electronics Building Applicant before: Shenzhen Nanbo Welllight Conductive Coating Co., Ltd. |
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