CN103401051A - Broadband power synthesizer based on radial line and substrate integrated waveguide - Google Patents

Broadband power synthesizer based on radial line and substrate integrated waveguide Download PDF

Info

Publication number
CN103401051A
CN103401051A CN2013103586208A CN201310358620A CN103401051A CN 103401051 A CN103401051 A CN 103401051A CN 2013103586208 A CN2013103586208 A CN 2013103586208A CN 201310358620 A CN201310358620 A CN 201310358620A CN 103401051 A CN103401051 A CN 103401051A
Authority
CN
China
Prior art keywords
guide
power
substrate
line
transmission line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2013103586208A
Other languages
Chinese (zh)
Other versions
CN103401051B (en
Inventor
张雷
朱晓维
田玲
翟建锋
周健义
洪伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southeast University
Original Assignee
Southeast University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southeast University filed Critical Southeast University
Priority to CN201310358620.8A priority Critical patent/CN103401051B/en
Publication of CN103401051A publication Critical patent/CN103401051A/en
Application granted granted Critical
Publication of CN103401051B publication Critical patent/CN103401051B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Microwave Amplifiers (AREA)

Abstract

The invention discloses a broadband power synthesizer based on a radial line and substrate integrated waveguide, and belongs to the technical field of microwave/millimeter-wave devices. The broadband power synthesizer comprises two power dividing structures which are arranged in a back-to-back manner, and four vertical connectors for connecting the power dividing structures. A coaxial-radial line conversion structures of the power dividing structures convert the input signals into a radial line mode from a coaxial line mode through broadband matching , and transmit the input signals to four full mode-half mode substrate integrated waveguide power dividers in a constant amplitude same phase manner; the four full mode-half mode substrate integrated waveguide power dividers divide the signals into eight ways, and output the signals to eight output microstrip lines through a graded microstrip line segment, and further are connected to the four vertical connectors to enable the signals subjected to synthesis to be output in one way through the power dividing structures below the vertical connectors. The broadband power synthesizer has the characteristics of broad frequency band, less insertion loss, excellent electric conduction and heat dissipation performance, small circuit space coupling and easiness in integration with the planar circuit, and is suitable for synthesis of large power singles.

Description

基于径向线和基片集成波导的宽带功率合成器Broadband Power Combiner Based on Radial Wire and Substrate Integrated Waveguide

技术领域technical field

本发明涉及微波/毫米波器件技术领域,尤其涉及一种基于径向线和基片集成波导的宽频带的射频功率合成器。本发明应用于微波通信系统,可有效提高发射机输出功率,增加无线信号覆盖范围。The invention relates to the technical field of microwave/millimeter wave devices, in particular to a wide-band radio frequency power combiner based on radial lines and substrate integrated waveguides. The invention is applied to a microwave communication system, can effectively improve the output power of a transmitter, and increase the coverage of wireless signals.

背景技术Background technique

在无线通信系统、雷达系统、通信干扰系统、遥感遥测系统等诸多领域中,功率放大器作为发射机中的末级输出器件,其输出功率电平直接决定了发射机信号的覆盖范围甚至系统容量。随着应用的频率范围向微波和毫米波频段扩展,单个固态器件的输出功率往往不能满足要求。因此,有必要对多个器件的输出功率进行合成,从而得到所需的功率电平。In wireless communication systems, radar systems, communication jamming systems, remote sensing and telemetry systems, and many other fields, power amplifiers are used as the final output devices in transmitters, and their output power levels directly determine the coverage and even system capacity of transmitter signals. As the frequency range of applications expands to microwave and millimeter wave bands, the output power of a single solid-state device often cannot meet the requirements. Therefore, it is necessary to combine the output power of multiple devices to obtain the required power level.

学术界已经对功率合成器进行了广泛的研究。其中,基于金属矩形波导的功率合成器具有损耗小,功率容量大的优点。但是该电路成本较高且难以和平面有源器件进行集成。另一方面,基于微带类平面传输线的功率合成电路虽然易于与有源功率器件衔接且制作成本低,但由于其是一种半开放型的导波结构,传输损耗较大、辐射较强,合成效率低,从而限制了这类合成电路在微波高频段中的应用。近年来,基片集成波导(SIW)和半模基片集成波导(HMSIW)作为新型微波毫米波平面传输线被相继提出,由于其结合了金属波导和平面传输线的诸多优点,越来越多的国内外学者将此项技术用于微波毫米波功率合成研究中。但是,在多路功分器/合路器的应用场合,树状结构的SIW/HMSIW合路器合成效率仍然较低,而梳状结构和谐振结构的SIW/HMSIW合路器带宽较窄。带宽受限的根本原因在于SIW/HMSIW输出的各端口之间的相位差与频率有关。实际上,该问题在基于普通传输线的合路器中都存在。为了解决这一问题,有学者提出了基于径向结构传输线的合路器,由于该电路结构具有旋转对称的特点,所以输出各端口幅度相位的平衡度与频率无关,可以有效提高功率合成器的带宽。Power combiners have been extensively studied in academia. Among them, the power combiner based on metal rectangular waveguide has the advantages of small loss and large power capacity. However, the cost of this circuit is high and it is difficult to integrate with planar active devices. On the other hand, although the power combining circuit based on the microstrip planar transmission line is easy to connect with active power devices and has low production cost, because it is a semi-open waveguide structure, the transmission loss is large and the radiation is strong. The synthesis efficiency is low, thus limiting the application of this type of synthesis circuit in the microwave high frequency band. In recent years, substrate-integrated waveguide (SIW) and half-mode substrate-integrated waveguide (HMSIW) have been proposed as new microwave and millimeter-wave planar transmission lines. Due to their combination of many advantages of metal waveguides and planar transmission lines, more and more domestic Foreign scholars have used this technology in the research of microwave and millimeter wave power synthesis. However, in the application of multi-channel power splitter/combiner, the synthesis efficiency of the tree-structured SIW/HMSIW combiner is still low, while the bandwidth of the comb-structured and resonant-structured SIW/HMSIW combiner is relatively narrow. The root cause of the limited bandwidth is that the phase difference between the ports of the SIW/HMSIW output is frequency dependent. In fact, this problem exists in combiners based on common transmission lines. In order to solve this problem, some scholars have proposed a combiner based on a radial structure transmission line. Since the circuit structure has the characteristics of rotational symmetry, the balance of the amplitude and phase of each output port has nothing to do with frequency, which can effectively improve the power combiner. bandwidth.

在设计功率合成器时,还要考虑如何充分利用金属散热结构的空间、功放管的位置等诸多重要问题。例如,在合成功率很大时,过于紧凑的合路器结构反而会造成散热不畅和有源器件的空间耦合,严重影响合成效果。因此,设计宽带、低损耗且具有良好散热结构的功率分配器/合路器,仍然具有十分重要的意义。When designing a power combiner, many important issues such as how to make full use of the space of the metal heat dissipation structure and the position of the power amplifier tube must also be considered. For example, when the combined power is high, an overly compact combiner structure will cause poor heat dissipation and spatial coupling of active devices, seriously affecting the combining effect. Therefore, it is still of great significance to design a power divider/combiner with broadband, low loss and good heat dissipation structure.

发明内容Contents of the invention

为了提高微波通信系统的输出功率,扩大发射信号覆盖范围,本发明提供了一种基于径向线和基片集成波导的宽带功率合成器,且具有频带宽、插入损耗低、制造简单、易于和平面电路集成及散热性能好等优点。In order to increase the output power of the microwave communication system and expand the coverage of the transmitted signal, the present invention provides a broadband power combiner based on radial lines and substrate integrated waveguides, which has wide frequency bandwidth, low insertion loss, simple manufacture, and easy integration with It has the advantages of planar circuit integration and good heat dissipation performance.

为实现上述目的,本发明采用如下技术方案:To achieve the above object, the present invention adopts the following technical solutions:

一种基于径向线和基片集成波导的宽带功率合成器,包括两个背靠背设置的功分结构和至少一个连接功分结构的垂直连接器;A broadband power combiner based on radial lines and substrate integrated waveguides, comprising two back-to-back power dividing structures and at least one vertical connector connecting the power dividing structures;

功分结构包括同轴-径向线转换结构、全模-半模基片集成波导功分器、渐变型微带过渡段和输出微带线;同轴-径向线转换结构中同轴线包括内导体和外导体墙,外导体墙固定在介质基片上;介质基片设有中心通孔,内导体和中心通孔之间设有匹配贴片,中心通孔向下连接介质基片的底层覆铜;外导体墙底部设有与中心通孔处于同一中心线上的圆柱空气腔体,内导体延伸至圆柱空气腔体内,圆柱空气腔体和位于其下方的介质基片、底层覆铜,以及位于其上方的外导体墙构成径向线;全模-半模基片集成波导功分器包括渐变型基片集成波导、基片集成波导和对称分布的两路半模基片集成波导,基片集成波导的一端通过渐变型基片集成波导与径向线相连,另一端截断为两路对称分布的半模基片集成波导,且每一路半模基片集成波导的输出信号经渐变型微带线段输出至一条输出微带线上;The power division structure includes coaxial-radial line conversion structure, full-mode-half-mode substrate integrated waveguide power divider, gradual microstrip transition section and output microstrip line; the coaxial line in the coaxial-radial line conversion structure Including the inner conductor and the outer conductor wall, the outer conductor wall is fixed on the dielectric substrate; the dielectric substrate is provided with a central through hole, and a matching patch is provided between the inner conductor and the central through hole, and the central through hole is connected downwards to the dielectric substrate. Bottom layer of copper; the bottom of the outer conductor wall is provided with a cylindrical air cavity on the same centerline as the central through hole, the inner conductor extends into the cylindrical air cavity, the cylindrical air cavity and the dielectric substrate below it, and the bottom layer of copper , and the outer conductor wall above it constitutes a radial line; the full-mode-half-mode substrate-integrated waveguide power divider includes a gradual-type substrate-integrated waveguide, a substrate-integrated waveguide, and a symmetrically distributed two-way half-mode substrate-integrated waveguide , one end of the SIW is connected to the radial line through a tapered SIW, and the other end is truncated into two symmetrically distributed half-mode SIWs, and the output signal of each half-mode SIW is gradually changed The type microstrip line segment is output to an output microstrip line;

垂直连接器包括两条垂直微带线,且每条垂直微带线一端与其中一个功分结构的输出微带线相连,另一端与另一个功分结构的输出微带线相连;垂直微带线设有放大器。The vertical connector includes two vertical microstrip lines, and one end of each vertical microstrip line is connected to the output microstrip line of one of the power division structures, and the other end is connected to the output microstrip line of the other power division structure; the vertical microstrip line with an amplifier.

更进一步的,每个功分结构可作为功分器单独使用,每个功分结构全模-半模基片集成波导功分器的数目为四个,每个功分结构输出微带线的数目为八个,垂直连接器的数目为四个。Furthermore, each power division structure can be used as a power divider alone, and the number of each power division structure full-mode-half-mode substrate integrated waveguide power divider is four, and each power division structure outputs the microstrip line The number is eight, and the number of vertical connectors is four.

输入信号送到同轴-径向线转换结构后,由横电磁波(以下简称TEM)传输模式通过同轴线内导体和中心通孔组成的阶跃阻抗变换器转换为径向线模式,向四周径向传播。由于同轴线的内外径大小为标准值,故通过调节中心通孔和匹配贴片的直径,以及圆柱空气腔体的高度和直径,可以在输入的同轴线和径向线之间获得宽带匹配。径向线模式信号通过渐变型基片集成波导段宽带匹配至TE10模式,并等幅同相的传输至四个全模-半模基片集成波导功分器,进一步分成等幅同相的八路信号,八路信号在垂直微带线上通过各自放大器放大后经反向安装的功分结构合成为一路信号,最终在反向安装的功分结构的同轴线还原为TEM传输模式输出。After the input signal is sent to the coaxial-radial line conversion structure, the transmission mode of the transverse electromagnetic wave (hereinafter referred to as TEM) is converted into a radial line mode through a step impedance converter composed of the inner conductor of the coaxial line and the central through hole. Radial propagation. Since the inner and outer diameters of the coaxial line are standard values, by adjusting the diameter of the central through hole and the matching patch, as well as the height and diameter of the cylindrical air cavity, a broadband can be obtained between the input coaxial line and the radial line match. The radial line mode signal is broadband-matched to the TE10 mode through the tapered substrate-integrated waveguide segment, and transmitted to four full-mode-half-mode substrate-integrated waveguide power splitters with equal amplitude and phase, and further divided into eight signals with equal amplitude and phase. The eight-channel signals are amplified by their respective amplifiers on the vertical microstrip line, and then synthesized into one signal through the reverse-installed power division structure, and finally restored to TEM transmission mode output on the coaxial line of the reverse-installed power division structure.

更进一步的,该功率合成器整体结构关于中心点旋转对称,功分结构输出各路信号之间的幅度平衡度和相位平衡度与频率无关,从而增加了工作带宽。两个功分结构和四个垂直连接器对称分布在金属散热体的各个表面。两个功分结构和四个垂直连接器分布在金属散热体的各个表面,能够节约散热空间,均匀分布热源,减少共面电路之间的空间耦合,提高系统的稳定性。Furthermore, the overall structure of the power combiner is rotationally symmetrical about the center point, and the amplitude balance and phase balance between the output signals of the power division structure have nothing to do with frequency, thereby increasing the working bandwidth. Two power division structures and four vertical connectors are symmetrically distributed on each surface of the metal radiator. Two power division structures and four vertical connectors are distributed on each surface of the metal radiator, which can save heat dissipation space, evenly distribute heat sources, reduce spatial coupling between coplanar circuits, and improve system stability.

更进一步的,渐变型基片集成波导段由四个金属化通孔组成,相邻两通孔之间的连线与水平方向及垂直方向的夹角为45度。调节金属化通孔的间距,可以在径向线和基片集成波导之间获得宽带匹配,还可以在保证结构旋转对称的同时增加匹配带宽。Furthermore, the tapered substrate-integrated waveguide segment is composed of four metallized through holes, and the angle between the connecting line between two adjacent through holes and the horizontal direction and the vertical direction is 45 degrees. By adjusting the spacing of the metallized through holes, broadband matching can be obtained between the radial lines and the substrate integrated waveguide, and the matching bandwidth can be increased while ensuring the rotational symmetry of the structure.

更进一步的,两个背靠背对称设置的功分结构之间设有金属散热体;底层覆铜为一整块无缝接地铜箔;外导体墙与介质基片的顶层覆铜、底层覆铜与金属散热体均通过螺钉保持无缝紧密接触,保证良好的导电及散热性能。Further, there is a metal radiator between the two back-to-back symmetrically arranged power division structures; the bottom copper clad is a whole piece of seamless ground copper foil; the top copper clad, bottom copper clad and The metal radiators are in seamless and close contact with screws to ensure good electrical conductivity and heat dissipation.

更进一步的,基片集成波导由顶层覆铜、底层覆铜和金属化通孔经普通印制电路板工艺加工而成。Furthermore, the substrate-integrated waveguide is processed by ordinary printed circuit board technology from the top copper clad, bottom copper clad and metallized through holes.

更进一步的,垂直连接器通过螺钉固定在金属散热体侧面,且每条垂直微带线两端分别与两个功分结构同侧的输出微带线相连。输出微带线和垂直连接器上的具有相同阻抗的垂直微带线直接连接,通过调整输出微带线斜线部分的长度,可以改变相邻垂直微带线的间距以适应不同的工作频段和功放尺寸。Furthermore, the vertical connector is fixed on the side of the metal radiator by screws, and the two ends of each vertical microstrip line are respectively connected to the output microstrip lines on the same side of the two power division structures. The output microstrip line is directly connected to the vertical microstrip line with the same impedance on the vertical connector. By adjusting the length of the slanted part of the output microstrip line, the spacing between adjacent vertical microstrip lines can be changed to adapt to different operating frequency bands and Amplifier size.

另外,每一路半模基片集成波导的输出信号经渐变型微带线段输出至一条输出微带线上,而调整相邻渐变型微带线段之间的夹角,可以降低相邻微带端口之间的耦合度。同时,调节渐变型微带线段的宽度和长度,可以在半模基片集成波导和输出微带线之间获得宽带匹配。In addition, the output signal of each half-mode substrate integrated waveguide is output to an output microstrip line through the tapered microstrip line segment, and adjusting the angle between adjacent tapered microstrip line segments can reduce the the degree of coupling between them. At the same time, by adjusting the width and length of the tapered microstrip line segment, broadband matching can be obtained between the half-mode substrate integrated waveguide and the output microstrip line.

更进一步的,两路半模基片集成波导之间的缝隙上焊接有隔离电阻,调节该隔离电阻的大小、位置以及两路半模基片集成波导之间的缝隙宽度,可以在保证相邻端口之间的隔离度的同时优化传输和反射特性。Furthermore, an isolation resistor is welded on the gap between the two half-mode substrate integrated waveguides, and the size and position of the isolation resistor and the gap width between the two half-mode substrate integrated waveguides can be adjusted to ensure that adjacent Optimizing both transmission and reflection characteristics while maintaining isolation between ports.

更进一步的,中心通孔的直径与同轴线内导体的直径不同,形成阶梯阻抗匹配,将输入同轴线的TEM传输模式转换为径向线模式。Furthermore, the diameter of the central through hole is different from the diameter of the inner conductor of the coaxial line, forming a step impedance matching, and converting the TEM transmission mode of the input coaxial line into a radial line mode.

有益效果:(1)本发明采用了径向线结合基片集成波导及半模基片集成波导,可以在保证输出各路等幅同相的同时增加了输出信号的路数,有利于集成更多的功率放大器,增加输出功率;(2)本发明结构呈旋转对称,从而使输出各路信号之间的幅度平衡度和相位平衡度与频率无关,从而增加了工作带宽;(3)本发明各部分连接中结合同轴线阶跃阻抗变换、匹配贴片、渐变型基片集成波导和渐变型微带线等技术,可以在宽频带内获得很好的回波损耗特性,从而保证信号在宽频带内的有效传输、分配和合成;(4)本发明信号的传输部分采用了基片集成波导及半模基片集成波导,可以获得比常规平面微带类型传输线更低的插入损耗,从而增加合成效率;(5)本发明提供的功率合成器中的两个功率分配器之间用垂直微带直接连接,无须任何转换,功率放大器可以放置在垂直微带线上,从而使该功率合成器有利于与有源电路的集成;(6)本发明提供的功率合成器充分利用了金属散热体的各个表面,节约了散热空间,可以使各功放模块的安装位置在空间上均匀分布,而热源的均匀分布有利于整体散热;(7)本发明提供的功率合成器各功放模块的安装位置、功率合成及分配电路的位置均不在同一平面上,有利于减少功放之间的空间耦合,保证系统的稳定性。Beneficial effects: (1) The present invention adopts the radial line combined with the substrate integrated waveguide and the half-mode substrate integrated waveguide, which can increase the number of output signals while ensuring that the output channels are equal in amplitude and in phase, which is conducive to integrating more (2) The structure of the present invention is rotationally symmetric, so that the amplitude balance and phase balance between the output signals have nothing to do with frequency, thereby increasing the working bandwidth; (3) Each of the present invention Combining coaxial line step impedance transformation, matching patch, tapered substrate integrated waveguide, tapered microstrip line and other technologies in some connections, good return loss characteristics can be obtained in a wide frequency band, thus ensuring that the signal is transmitted over a wide frequency band Effective transmission, distribution and synthesis in the band; (4) The signal transmission part of the present invention adopts the substrate integrated waveguide and the half-mode substrate integrated waveguide, which can obtain lower insertion loss than the conventional planar microstrip type transmission line, thereby increasing Combination efficiency; (5) vertical microstrip is directly connected between the two power dividers in the power combiner provided by the present invention, without any conversion, and the power amplifier can be placed on the vertical microstrip line, so that the power combiner It is beneficial to the integration with the active circuit; (6) The power combiner provided by the present invention makes full use of each surface of the metal radiator, saves the heat dissipation space, and can make the installation positions of the power amplifier modules evenly distributed in space, while the heat source The uniform distribution is beneficial to the overall heat dissipation; (7) The installation positions of the power amplifier modules of the power combiner provided by the present invention, the positions of the power synthesis and distribution circuits are not on the same plane, which is conducive to reducing the spatial coupling between power amplifiers and ensuring the system stability.

附图说明Description of drawings

图1为本发明提供的宽带功率合成器结构图。Fig. 1 is a structural diagram of a broadband power combiner provided by the present invention.

图2为图1中T-T’截面图。Fig. 2 is a T-T' sectional view in Fig. 1.

图3为图1中S-S’截面图。Fig. 3 is S-S' sectional view in Fig. 1.

图4是本发明提供的功分结构作为功率分配器单独使用时的传输特性和反射特性的测试结果。Fig. 4 is the test results of transmission characteristics and reflection characteristics when the power dividing structure provided by the present invention is used alone as a power divider.

图5是本发明提供的宽带功率合成器的传输特性和反射特性的测试结果。Fig. 5 is a test result of the transmission characteristic and reflection characteristic of the broadband power combiner provided by the present invention.

具体实施方式Detailed ways

下面结合附图对本发明作更进一步的说明。The present invention will be further described below in conjunction with the accompanying drawings.

功率分配器/合成器的作用在于对输入信号按照一定的幅度和相位要求进行分配,如图1所示,本发明的基于径向线和基片集成波导的宽带功率合成器包括两个背靠背对称设置的功分结构A和四个连接功分结构A的垂直连接器B。其中,每个功分结构A由三部分组成。第一部分是同轴-径向线转换结构10,第二部分是四个全模-半模基片集成波导功分器8,第三部分是八个渐变型微带过渡段19和输出微带线20;功分结构A将输入信号分成等幅同相的8路信号,每个功分结构A可以单独设计并作为功分器独立使用。垂直连接器B包括两条垂直微带线21;所有结构关于中心点呈旋转对称。The function of the power divider/combiner is to distribute the input signal according to certain amplitude and phase requirements. As shown in Figure 1, the broadband power combiner based on radial lines and substrate integrated waveguides of the present invention includes two back-to-back symmetrical Set power division structure A and four vertical connectors B connecting power division structure A. Wherein, each power division structure A consists of three parts. The first part is a coaxial-radial line conversion structure 10, the second part is four full-mode-half-mode substrate integrated waveguide power splitters 8, and the third part is eight gradient microstrip transition sections 19 and output microstrip Line 20; power division structure A divides the input signal into 8 signals of equal amplitude and same phase, and each power division structure A can be independently designed and used independently as a power divider. The vertical connector B includes two vertical microstrip lines 21; all structures are rotationally symmetrical about the center point.

在本实例中,输入信号从标准的50欧姆SMA同轴接头,传输至同轴-径向线转换结构10,该同轴线由外导体墙4和和内导体11组成,如图2所示在,外导体墙4通过螺钉6固定,并与介质基片7的顶层覆铜1保持良好的电热接触。介质基片7选用Taconic的TLX-8,介电常数为2.55,厚度为1.524mm。In this example, the input signal is transmitted from a standard 50 ohm SMA coaxial connector to a coaxial-radial line conversion structure 10, the coaxial line is composed of an outer conductor wall 4 and an inner conductor 11, as shown in Figure 2 Here, the outer conductor wall 4 is fixed by screws 6 and maintains good electrical and thermal contact with the top layer copper clad 1 of the dielectric substrate 7 . The dielectric substrate 7 is Taconic's TLX-8, with a dielectric constant of 2.55 and a thickness of 1.524 mm.

同轴-径向线转换结构10中,输入信号由同轴线的TEM传输模式通过同轴线内导体11和中心通孔14组成的阶跃阻抗变换器转换为径向线模式。中心通孔14位于介质基片7内,并向下连接底层覆铜2。底层覆铜2为一整块无缝接地铜箔。在内导体11和中心通孔14之间,即介质基片7的表面,设计有匹配贴片13。对外导体墙4进行机械加工,形成圆柱空气腔体12。该腔体和位于其下方的介质基片7、底层覆铜2,以及上方的外导体墙4构成了径向线15。由于50欧姆同轴线的内外径大小为标准值,故通过调节中心通孔14和匹配贴片13的直径,以及圆柱空气腔体12的高度和直径,可以在输入的同轴线和径向线15之间获得宽带匹配。而在确定50欧姆SMA同轴接头尺寸的基础上,本实例将径向线15的末端平面设为理想匹配层(PML),通过调节中心通孔14和匹配贴片13的直径,以及圆柱空气腔体12的直径和高度,使得同轴输入端口的回波损耗在宽频带内性能最优。本实例中匹配贴片13采用铜箔,并使其附在介质基片7的表面,匹配贴片13的直径为5.3mm,中心通孔14的直径为3.4mm。另外,圆柱空气腔体12的高度和直径分别为0.5mm和26mm,In the coaxial-radial line conversion structure 10 , the input signal is converted from the TEM transmission mode of the coaxial line to the radial line mode through a step impedance converter composed of the coaxial inner conductor 11 and the central through hole 14 . The central through hole 14 is located in the dielectric substrate 7 and connects to the underlying copper clad 2 downwards. The bottom copper clad 2 is a whole piece of seamless ground copper foil. Between the inner conductor 11 and the central through hole 14 , that is, on the surface of the dielectric substrate 7 , a matching patch 13 is designed. The outer conductor wall 4 is machined to form a cylindrical air cavity 12 . The cavity, the dielectric substrate 7 below it, the bottom layer of copper 2 , and the outer conductor wall 4 above constitute a radial line 15 . Since the inner and outer diameters of the 50 ohm coaxial line are standard values, by adjusting the diameters of the central through hole 14 and the matching patch 13, as well as the height and diameter of the cylindrical air cavity 12, the input coaxial line and radial direction can be adjusted. Broadband matching is obtained between lines 15. On the basis of determining the size of the 50 ohm SMA coaxial connector, this example sets the end plane of the radial line 15 as the ideal matching layer (PML), by adjusting the diameters of the central through hole 14 and the matching patch 13, and the cylindrical air The diameter and height of the cavity 12 make the return loss of the coaxial input port optimal in a wide frequency band. In this example, copper foil is used for the matching patch 13 and attached to the surface of the dielectric substrate 7. The diameter of the matching patch 13 is 5.3 mm, and the diameter of the central through hole 14 is 3.4 mm. In addition, the height and diameter of the cylindrical air cavity 12 are 0.5mm and 26mm respectively,

输入信号由同轴-径向线转换结构10同轴线内导体激励,转换为径向线模式后向四周径向传播,径向线模式通过渐变型基片集成波导段9宽带匹配至TE10模式,并等幅同相的传输至四个全模-半模基片集成波导功分器8,进一步分成等幅同相的八路信号。从而完成功分结构A对输入信号按照一定的幅度和相位要求进行分配的功能。The input signal is excited by the inner conductor of the coaxial-radial line conversion structure 10, converted into a radial line mode and then propagated radially around, and the radial line mode is matched to the TE10 mode through the tapered substrate integrated waveguide section 9 broadband , and transmit them to four full-mode-half-mode substrate integrated waveguide power splitters 8 with equal amplitude and phase, and further divide them into eight signals with equal amplitude and phase. Thus, the function of component structure A to distribute the input signal according to certain amplitude and phase requirements is completed.

全模-半模基片集成波导功分器8包括渐变型基片集成波导段9、基片集成波导16和对称分布的两个半模基片集成波导17。构成基片集成波导16和半模基片集成波导17的金属化通孔直径为1mm,孔间距为1.5mm。渐变型基片集成波导段9由四个金属化通孔组成。相邻两通孔之间的连线与水平方向(垂直方向)的夹角为45度,这样可以在保证结构旋转对称的同时增加匹配带宽,调节渐变型基片集成波导段9的长度(即金属化通孔的间距),可以改善并优化宽频带内的传输和反射特性。本实例中渐变型基片集成波导段9金属化通孔的间距为1.1mm。基片集成波导16由顶层覆铜1、接底层覆铜2和金属化通孔3经普通印制电路板工艺加工而成。通过在顶层覆铜1上蚀刻开路缝隙构成两个半模基片集成波导17。由于开缝并不影响TE10模式的场分布,故该功分器本身就是宽带的。在两路半模基片集成波导17之间的缝隙上焊接隔离电阻18。调节隔离电阻18的大小、位置以及两路半模基片集成波导17之间的缝隙宽度,可以在保证相邻端口之间的隔离度的同时优化传输和反射特性。本实例中隔离电阻18为100欧姆,距离缝隙终端为6.7mm,两路半模基片集成波导17之间的缝隙宽度为0.4mm。The full-mode-half-mode substrate-integrated waveguide power splitter 8 includes a tapered substrate-integrated waveguide section 9, a substrate-integrated waveguide 16 and two half-mode substrate-integrated waveguides 17 symmetrically distributed. The diameter of the metallized through-holes constituting the substrate-integrated waveguide 16 and the half-mode substrate-integrated waveguide 17 is 1mm, and the hole pitch is 1.5mm. The tapered substrate-integrated waveguide section 9 is composed of four metallized through holes. The angle between the connection line between two adjacent through holes and the horizontal direction (vertical direction) is 45 degrees, so that the matching bandwidth can be increased while ensuring the rotational symmetry of the structure, and the length of the tapered substrate integrated waveguide section 9 can be adjusted (ie The spacing of metallized vias) can improve and optimize the transmission and reflection characteristics in a wide frequency band. In this example, the pitch of the metallized through-holes of the tapered substrate integrated waveguide section 9 is 1.1 mm. The substrate integrated waveguide 16 is processed by ordinary printed circuit board technology from the top layer copper clad 1, the bottom layer copper clad 2 and the metallized through hole 3. Two half-mode substrate integrated waveguides 17 are formed by etching open-circuit slits on the top layer copper clad 1 . Since the slot does not affect the field distribution of the TE 10 mode, the power splitter itself is broadband. An isolation resistor 18 is welded on the gap between the two half-mode substrate integrated waveguides 17 . By adjusting the size and position of the isolation resistor 18 and the gap width between the two half-mode substrate integrated waveguides 17, the transmission and reflection characteristics can be optimized while ensuring the isolation between adjacent ports. In this example, the isolation resistance 18 is 100 ohms, the distance from the slot terminal is 6.7 mm, and the gap width between the two half-mode substrate integrated waveguides 17 is 0.4 mm.

每一路半模基片集成波导17的输出信号经渐变型微带线段19和输出至输出微带线20。调整相邻渐变型微带线段19之间的夹角,可以降低相邻微带端口之间的耦合度。同时,调节渐变型微带线段19的宽度和长度,可以在半模基片集成波导17和输出微带线20之间获得宽带匹配。本实例中相邻渐变型微带线段19之间的夹角为30度,其长度和宽度分别为24mm和6mm。The output signal of each half-mode substrate integrated waveguide 17 passes through the tapered microstrip line segment 19 and is output to the output microstrip line 20 . Adjusting the included angle between adjacent tapered microstrip line segments 19 can reduce the coupling degree between adjacent microstrip ports. At the same time, by adjusting the width and length of the tapered microstrip line segment 19 , broadband matching can be obtained between the half-mode substrate integrated waveguide 17 and the output microstrip line 20 . In this example, the included angle between adjacent tapered microstrip line segments 19 is 30 degrees, and the length and width thereof are 24 mm and 6 mm, respectively.

本实例中渐变型微带线段19和输出微带线20采用标准50欧姆微带线,且输出微带线20和垂直连接器B上的具有相同阻抗的垂直微带线21直接连接,如图3所示。垂直连接器B通过螺钉6固定在金属散热体5的侧面,保证良好的导电及散热性能。各路信号在垂直微带线21上通过各自放大器放大后经底层反向安装的功分结构A合成为一路信号,最终在底层的同轴线输出。需特别指出的是,通过调整输出微带线20斜线部分的长度,可以改变相邻垂直微带线21的间距以适应不同的工作频段和功放尺寸。In this example, the gradient microstrip line segment 19 and the output microstrip line 20 adopt a standard 50 ohm microstrip line, and the output microstrip line 20 is directly connected to the vertical microstrip line 21 with the same impedance on the vertical connector B, as shown in the figure 3. The vertical connector B is fixed on the side of the metal radiator 5 by screws 6 to ensure good electrical conductivity and heat dissipation. The signals of each channel are amplified by their respective amplifiers on the vertical microstrip line 21 and synthesized into one signal by the reversely installed power division structure A on the bottom layer, and finally output on the coaxial line at the bottom layer. It should be particularly pointed out that by adjusting the length of the slanted part of the output microstrip line 20, the distance between adjacent vertical microstrip lines 21 can be changed to adapt to different operating frequency bands and power amplifier sizes.

本实例中首先根据基片集成波导16的单模传播条件设计其宽度,然后将一个全模-半模基片集成波导功分器8连接两路渐变型微带线段19及输出微带线20,并在两路半模集成波导17之间的缝隙上焊接隔离电阻18。调节隔离电阻18的大小、位置、两路半模集成波导17之间缝隙的宽度、渐变型微带线段宽19的长度、宽度以及相邻渐变型微带线段宽19之间的夹角,可以在保证相邻端口之间的隔离度的同时优化传输和反射特性。In this example, first design its width according to the single-mode propagation condition of the substrate-integrated waveguide 16, and then connect a full-mode-half-mode substrate-integrated waveguide power divider 8 to the two-way gradient microstrip line segment 19 and the output microstrip line 20 , and weld an isolation resistor 18 on the gap between the two half-mode integrated waveguides 17 . Adjust the size and position of the isolation resistor 18, the width of the gap between the two half-mode integrated waveguides 17, the length and width of the gradient microstrip line segment width 19, and the angle between adjacent gradient microstrip line segment widths 19. Optimize transmission and reflection characteristics while maintaining isolation between adjacent ports.

输入信号送到同轴-径向线转换结构10后,由TEM传输模式通过同轴线内导体11和中心通孔14组成的阶跃阻抗变换器转换为径向线模式,向四周径向传播。由于同轴线的内外径大小为标准值,故通过调节中心通孔14和匹配贴片13的直径,以及圆柱空气腔体12的高度和直径,可以在输入的同轴线和径向线之间获得宽带匹配。径向线模式信号通过渐变型基片集成波导段9宽带匹配至TE10模式,并等幅同相的传输至四个全模-半模基片集成波导功分器8,进一步分成等幅同相的八路信号,每一路信号经渐变型微带线段19、输出微带线20输送给垂直连接器B上的具有相同阻抗的垂直微带线21。八路信号在垂直微带线21上通过各自放大器放大后经反向安装的功分结构A反向运行合成为一路信号,最终在反向安装的功分结构A的同轴线还原为TEM传输模式输出。After the input signal is sent to the coaxial-radial line conversion structure 10, the TEM transmission mode is converted into a radial line mode through a step impedance converter composed of the inner conductor 11 of the coaxial line and the central through hole 14, and radially propagates to the surroundings . Since the inner and outer diameters of the coaxial line are standard values, by adjusting the diameters of the central through hole 14 and the matching patch 13, as well as the height and diameter of the cylindrical air cavity 12, the input coaxial line and the radial line can be adjusted. Broadband matching is obtained between. The radial line mode signal is broadband-matched to the TE 10 mode through the tapered substrate integrated waveguide segment 9, and is transmitted to four full-mode-half-mode substrate integrated waveguide power splitters 8 with equal amplitude and phase, and further divided into equal amplitude and phase Eight channels of signals, each signal is sent to the vertical microstrip line 21 with the same impedance on the vertical connector B through the gradual microstrip line segment 19 and the output microstrip line 20 . The eight signals are amplified by their respective amplifiers on the vertical microstrip line 21, and then synthesized into one signal through the reverse operation of the power division structure A installed in reverse, and finally restored to the TEM transmission mode on the coaxial line of the power division structure A installed in reverse output.

本实例在4.5GHz-11GHz频段实现基于径向线和基片集成波导的宽带功率合成器,并在3GHz-13GHz频段测试其整体性能。首先对单个功分结构A器进行测试。该结构可独立完成八路信号的功率分配。由于所有端口呈旋转对称,故只需测试从输入端口至功分结构A任一输出微带线20端口的传输系数和反射系数,如图4所示。在4.5GHz至11.2GHz的频带范围内插入损耗整体低于1dB,最小值为0.4dB。回波损耗优于-12dB。该测试的结果包含了输出端口SMA接头的损耗。This example implements a broadband power combiner based on radial lines and substrate integrated waveguides in the 4.5GHz-11GHz frequency band, and tests its overall performance in the 3GHz-13GHz frequency band. First, test the single power division structure A device. This structure can independently complete the power distribution of eight channels of signals. Since all ports are rotationally symmetrical, it is only necessary to test the transmission coefficient and reflection coefficient from the input port to any output microstrip line port 20 of the power division structure A, as shown in Figure 4. In the 4.5GHz to 11.2GHz frequency band, the insertion loss is generally lower than 1dB, and the minimum value is 0.4dB. The return loss is better than -12dB. The results of this test include the loss of the output port SMA connector.

用四个垂直连接器B将上述的一对功分结构A作背靠背连接,构成一个两端口网络。该网络的测试结果如图5所示。在4.8GHz至11GHz的频带内,插入损耗最大值为1.9dB,最小值为0.9dB。回波损耗优于-10dB。Use four vertical connectors B to connect the above-mentioned pair of power division structures A back to back to form a two-port network. The test results of this network are shown in Fig. 5. In the frequency band from 4.8GHz to 11GHz, the insertion loss has a maximum value of 1.9dB and a minimum value of 0.9dB. The return loss is better than -10dB.

以上仅是本发明的优选实施方式,应当指出:对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。The above are only preferred embodiments of the present invention, and it should be pointed out that for those of ordinary skill in the art, some improvements and modifications can also be made without departing from the principles of the present invention, and these improvements and modifications should also be considered Be the protection scope of the present invention.

Claims (9)

1. the synthesizer of the broadband power based on radial transmission line and substrate integration wave-guide, is characterized in that: comprise that two merit separation structures that arrange back-to-back are connected the vertical connector of merit separation structure with at least one;
Described merit separation structure comprises coaxially-radial transmission line transformational structure (10), full mould-half module substrate integrated wave guide power splitter (8), gradation type microstrip transition section (19) and export microstrip line (20); Described coaxial-radial transmission line transformational structure (10) in coaxial line comprise inner wire (11) and outer conductor wall (4), described outer conductor wall (4) is fixed on dielectric substrate (7); Described dielectric substrate (7) is provided with central through hole (14), between described inner wire (11) and central through hole (14), is provided with coupling paster (13), and described central through hole (14) connects bottom downwards and covers copper (2); Described outer conductor wall (4) bottom is provided with cylinder air cavity (12), described inner wire (11) extends in cylinder air cavity (12), described cylinder air cavity (12) and the dielectric substrate (7), the bottom that are positioned at its below cover copper (2), and the outer conductor wall (4) of the side of being located thereon forms radial transmission line (15); Described full mould-half module substrate integrated wave guide power splitter (8) comprises gradation type substrate integration wave-guide (9), substrate integration wave-guide (16) and symmetrical two-way half module substrate integrated wave guide (17), one end of described substrate integration wave-guide (16) is connected with radial transmission line (15) by gradation type substrate integration wave-guide (9), the other end blocks as the symmetrical half module substrate integrated wave guide of two-way (17), and the output signal of each road half module substrate integrated wave guide (17) exports on an output microstrip line (20) through gradation type microstrip line section (19);
Described vertical connector comprises two vertical microstrip lines (21), and every vertical microstrip line (21) one ends are connected with the output microstrip line (20) of one of them merit separation structure, and the other end is connected with the output microstrip line (20) of another merit separation structure; Described vertical microstrip line (21) is provided with amplifier.
2. a kind of synthesizer of broadband power based on radial transmission line and substrate integration wave-guide according to claim 1; it is characterized in that: the number of described full mould-half module substrate integrated wave guide power splitter (8) is four; the number of each merit separation structure output microstrip line (20) is eight, and the number of described vertical connector is four.
3. a kind of synthesizer of broadband power based on radial transmission line and substrate integration wave-guide according to claim 1, it is characterized in that: described two are provided with metallic heat dissipating part (5) back-to-back between symmetrically arranged merit separation structure; It is the seamless ground connection Copper Foil of a monoblock that described bottom covers copper (2); Described outer conductor wall (4) covers copper (1) with the top layer of dielectric substrate (7), bottom covers copper (2) and all by screw (6), keeps seamless close contact with metallic heat dissipating part (5).
4. according to claim 2 or 3 described a kind of synthesizers of broadband power based on radial transmission line and substrate integration wave-guide, it is characterized in that: this power combiner is about the central point Rotational Symmetry; Described two merit separation structures and four vertical connectors are symmetrically distributed in each surface of metallic heat dissipating part (5).
5. a kind of synthesizer of broadband power based on radial transmission line and substrate integration wave-guide according to claim 1, it is characterized in that: described gradation type substrate integration wave-guide section (9) is comprised of four plated-through holes (3), and the angle of the line between adjacent two through hole and horizontal direction and vertical direction is 45 degree.
6. according to claim 3 or 5 described a kind of synthesizers of broadband power based on radial transmission line and substrate integration wave-guide is characterized in that: described substrate integration wave-guide (16) by top layer cover copper (1), bottom covers copper (2) and plated-through hole (3) forms through ordinary printed circuit board processes.
7. a kind of synthesizer of broadband power based on radial transmission line and substrate integration wave-guide according to claim 1, it is characterized in that: described vertical connector is fixed on metallic heat dissipating part (5) side by screw (6), and every vertical microstrip line (21) two ends are connected with the output microstrip line (20) of two merit separation structure homonymies respectively.
8. a kind of synthesizer of broadband power based on radial transmission line and substrate integration wave-guide according to claim 1, is characterized in that: on the gap between described two-way half module substrate integrated wave guide (17), be welded with isolation resistance (18).
9. a kind of synthesizer of broadband power based on radial transmission line and substrate integration wave-guide according to claim 1, it is characterized in that: the diameter of described central through hole (14) is different from the diameter of coaxial inner conductor (11).
CN201310358620.8A 2013-08-15 2013-08-15 Broadband power synthesizer based on radial line and substrate integrated waveguide Active CN103401051B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310358620.8A CN103401051B (en) 2013-08-15 2013-08-15 Broadband power synthesizer based on radial line and substrate integrated waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310358620.8A CN103401051B (en) 2013-08-15 2013-08-15 Broadband power synthesizer based on radial line and substrate integrated waveguide

Publications (2)

Publication Number Publication Date
CN103401051A true CN103401051A (en) 2013-11-20
CN103401051B CN103401051B (en) 2015-03-04

Family

ID=49564627

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310358620.8A Active CN103401051B (en) 2013-08-15 2013-08-15 Broadband power synthesizer based on radial line and substrate integrated waveguide

Country Status (1)

Country Link
CN (1) CN103401051B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112054275A (en) * 2020-08-20 2020-12-08 东南大学 Low-loss switching device of substrate integrated waveguide end feed antenna
CN114709580A (en) * 2022-01-14 2022-07-05 南京恒讯微波科技有限公司 Transmission circuit with accurate debugging function
CN115313007A (en) * 2022-04-12 2022-11-08 河北军澍电子科技有限公司 Ultra-wideband miniaturized microstrip power divider

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4673899A (en) * 1985-09-23 1987-06-16 General Electric Company H-plane stacked waveguide power divider/combiner
JPH09298409A (en) * 1996-05-01 1997-11-18 Mitsubishi Electric Corp Microwave semiconductor device
CN1949589A (en) * 2006-07-10 2007-04-18 东南大学 Half module substrate integrated wave guide ring electric bridge
CN202275909U (en) * 2011-10-26 2012-06-13 电子科技大学 Device for converting substrate integrated waveguide into coaxial waveguide
CN102496763A (en) * 2011-12-09 2012-06-13 电子科技大学 Wideband multi-channel substrate integrated waveguide power divider adopting novel high-isolation technology
CN202633488U (en) * 2012-05-25 2012-12-26 西安空间无线电技术研究所 Resonance type substrate integrated waveguide power synthesizer
CN202695689U (en) * 2012-07-18 2013-01-23 深圳市通创通信有限公司 Millimeter wave power combining amplifier
CN203367458U (en) * 2013-08-15 2013-12-25 东南大学 Broadband power combiner based on radial line and substrate integrated waveguide

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4673899A (en) * 1985-09-23 1987-06-16 General Electric Company H-plane stacked waveguide power divider/combiner
JPH09298409A (en) * 1996-05-01 1997-11-18 Mitsubishi Electric Corp Microwave semiconductor device
CN1949589A (en) * 2006-07-10 2007-04-18 东南大学 Half module substrate integrated wave guide ring electric bridge
CN202275909U (en) * 2011-10-26 2012-06-13 电子科技大学 Device for converting substrate integrated waveguide into coaxial waveguide
CN102496763A (en) * 2011-12-09 2012-06-13 电子科技大学 Wideband multi-channel substrate integrated waveguide power divider adopting novel high-isolation technology
CN202633488U (en) * 2012-05-25 2012-12-26 西安空间无线电技术研究所 Resonance type substrate integrated waveguide power synthesizer
CN202695689U (en) * 2012-07-18 2013-01-23 深圳市通创通信有限公司 Millimeter wave power combining amplifier
CN203367458U (en) * 2013-08-15 2013-12-25 东南大学 Broadband power combiner based on radial line and substrate integrated waveguide

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LEI ZHANG: "design of wideband planar power dividers/combiners", 《IEEE》, 31 December 2012 (2012-12-31) *
任重: "Ka波段三路波导功分器/合路器", 《电子与封装》, vol. 12, no. 5, 31 May 2012 (2012-05-31) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112054275A (en) * 2020-08-20 2020-12-08 东南大学 Low-loss switching device of substrate integrated waveguide end feed antenna
CN114709580A (en) * 2022-01-14 2022-07-05 南京恒讯微波科技有限公司 Transmission circuit with accurate debugging function
CN115313007A (en) * 2022-04-12 2022-11-08 河北军澍电子科技有限公司 Ultra-wideband miniaturized microstrip power divider

Also Published As

Publication number Publication date
CN103401051B (en) 2015-03-04

Similar Documents

Publication Publication Date Title
CN105304998B (en) A Novel Broadband Radial Curved Gradient Ridge Spatial Power Splitter/Combiner
CN107732400B (en) A Millimeter Wave Broadband Ridge Probe Radial Waveguide Power Splitter/Combiner
CN113517527B (en) Single-sided double-ridge double-probe waveguide power divider, power combiner and synthesis method
CN114374068B (en) Combiner based on novel radial line waveguide
CN112151927B (en) Double-ridge waveguide 4-path power synthesis amplifier
CN101728620B (en) Asymmetric coplanar waveguide directional coupler
US20240055749A1 (en) Rectangular Waveguide-to-Microstrip in-phase High-isolation Broadband Power Divider
CN107275741B (en) Novel millimeter wave waveguide radial power synthesis circuit
CN105655679A (en) Quasi-planar high-isolation multi-path power divider
CN103490133B (en) Micro-strip multi-directional power divider/combiner based on flexible connection
CN204180029U (en) A kind of sum-difference network circuit of X-band and device
CN112103665A (en) Radio frequency feed network, phased array antenna and communication equipment
CN103401051B (en) Broadband power synthesizer based on radial line and substrate integrated waveguide
CN106229597B (en) The low reflection waveguide magic T of ultra-compact high-isolation
CN104617366B (en) The road power splitter of directrix plane high isolation four based on capacitance compensation
CN206116581U (en) Power dividers and their components
CN203367458U (en) Broadband power combiner based on radial line and substrate integrated waveguide
CN107732396B (en) Power divider based on substrate integrated waveguide
CN206834314U (en) A Ka-band coaxial waveguide inner space power distribution/combiner
CN113612000B (en) Rectangular waveguide I-shaped isolation network double-microstrip converter
CN112563711B (en) Rectangular patch-half-mode substrate integrated waveguide hybrid 90-degree directional coupler
CN106558764A (en) A kind of feed structure and double frequency common reflector
CN105024125A (en) Power divider/combiner of trisected odd number structure
CN108736123A (en) A kind of compact suspension micro-strip high isolation multichannel power combiner
CN104201441A (en) Coupling line broadband phase shifter for LTE system

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant