CN103400739A - Pointed cone array cold cathode X light tube with large-emitting-area field emission composite materials - Google Patents
Pointed cone array cold cathode X light tube with large-emitting-area field emission composite materials Download PDFInfo
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- CN103400739A CN103400739A CN2013103408925A CN201310340892A CN103400739A CN 103400739 A CN103400739 A CN 103400739A CN 2013103408925 A CN2013103408925 A CN 2013103408925A CN 201310340892 A CN201310340892 A CN 201310340892A CN 103400739 A CN103400739 A CN 103400739A
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- pointed cone
- negative electrode
- cold cathode
- cone array
- inner grid
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- 239000002131 composite material Substances 0.000 title claims abstract description 22
- 238000000605 extraction Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 abstract description 9
- 238000003491 array Methods 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
Description
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310340892.5A CN103400739B (en) | 2013-08-06 | 2013-08-06 | Pointed cone array cold cathode X-ray tube with large emission area field emission composite material |
Applications Claiming Priority (1)
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---|---|---|---|
CN201310340892.5A CN103400739B (en) | 2013-08-06 | 2013-08-06 | Pointed cone array cold cathode X-ray tube with large emission area field emission composite material |
Publications (2)
Publication Number | Publication Date |
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CN103400739A true CN103400739A (en) | 2013-11-20 |
CN103400739B CN103400739B (en) | 2016-08-10 |
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CN201310340892.5A Active CN103400739B (en) | 2013-08-06 | 2013-08-06 | Pointed cone array cold cathode X-ray tube with large emission area field emission composite material |
Country Status (1)
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CN (1) | CN103400739B (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105374654A (en) * | 2014-08-25 | 2016-03-02 | 同方威视技术股份有限公司 | Electron source, X ray source and device using X ray source |
CN110993470A (en) * | 2019-12-23 | 2020-04-10 | 西北核技术研究院 | Large-area spliced high-current diode anode target |
WO2020124691A1 (en) * | 2018-12-17 | 2020-06-25 | 深圳先进技术研究院 | X-ray source array, and x-ray tomography system and method |
CN112103154A (en) * | 2020-09-22 | 2020-12-18 | 成都创元电子有限公司 | Indirect-heating lanthanum hexaboride cathode |
CN114284122A (en) * | 2021-06-30 | 2022-04-05 | 科罗诺司医疗器械(上海)有限公司 | Novel cathode structure for X-ray tube |
US11875965B2 (en) | 2019-07-24 | 2024-01-16 | Hamamatsu Photonics K.K. | X-ray tube |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5176557A (en) * | 1987-02-06 | 1993-01-05 | Canon Kabushiki Kaisha | Electron emission element and method of manufacturing the same |
CN1121638A (en) * | 1994-10-28 | 1996-05-01 | 株式会社岛津制作所 | Anode for an X-ray tube, a method of manufacturing the anode, and a fixed anode X-ray tube |
US6031328A (en) * | 1996-09-18 | 2000-02-29 | Kabushiki Kaisha Toshiba | Flat panel display device |
JP2003288834A (en) * | 2002-03-27 | 2003-10-10 | National Institute Of Advanced Industrial & Technology | Field emission cold cathode |
-
2013
- 2013-08-06 CN CN201310340892.5A patent/CN103400739B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5176557A (en) * | 1987-02-06 | 1993-01-05 | Canon Kabushiki Kaisha | Electron emission element and method of manufacturing the same |
CN1121638A (en) * | 1994-10-28 | 1996-05-01 | 株式会社岛津制作所 | Anode for an X-ray tube, a method of manufacturing the anode, and a fixed anode X-ray tube |
US6031328A (en) * | 1996-09-18 | 2000-02-29 | Kabushiki Kaisha Toshiba | Flat panel display device |
JP2003288834A (en) * | 2002-03-27 | 2003-10-10 | National Institute Of Advanced Industrial & Technology | Field emission cold cathode |
Non-Patent Citations (1)
Title |
---|
李东方: "复合型尖锥场发射阵列制备工艺研究", 《优秀硕士学位论文》 * |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016029811A1 (en) * | 2014-08-25 | 2016-03-03 | 同方威视技术股份有限公司 | Electron source, x-ray source and device using x-ray source |
US10014148B2 (en) | 2014-08-25 | 2018-07-03 | Nuctech Company Limited | Electron source, X-ray source and device using the X-ray source |
EP3188213A4 (en) * | 2014-08-25 | 2018-07-18 | Nuctech Company Limited | Electron source, x-ray source and device using x-ray source |
RU2668268C2 (en) * | 2014-08-25 | 2018-09-28 | Нактех Компани Лимитед | Source of electrons, source of x-ray radiation and device using source of x-ray radiation |
CN105374654B (en) * | 2014-08-25 | 2018-11-06 | 同方威视技术股份有限公司 | Electron source, x-ray source, the equipment for having used the x-ray source |
CN105374654A (en) * | 2014-08-25 | 2016-03-02 | 同方威视技术股份有限公司 | Electron source, X ray source and device using X ray source |
WO2020124691A1 (en) * | 2018-12-17 | 2020-06-25 | 深圳先进技术研究院 | X-ray source array, and x-ray tomography system and method |
US11875965B2 (en) | 2019-07-24 | 2024-01-16 | Hamamatsu Photonics K.K. | X-ray tube |
TWI845725B (en) * | 2019-07-24 | 2024-06-21 | 日商濱松赫德尼古斯股份有限公司 | X-ray tube |
CN110993470A (en) * | 2019-12-23 | 2020-04-10 | 西北核技术研究院 | Large-area spliced high-current diode anode target |
CN112103154B (en) * | 2020-09-22 | 2023-11-14 | 成都创元电子有限公司 | Indirect heating lanthanum hexaboride cathode |
CN112103154A (en) * | 2020-09-22 | 2020-12-18 | 成都创元电子有限公司 | Indirect-heating lanthanum hexaboride cathode |
CN114284122A (en) * | 2021-06-30 | 2022-04-05 | 科罗诺司医疗器械(上海)有限公司 | Novel cathode structure for X-ray tube |
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Publication number | Publication date |
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CN103400739B (en) | 2016-08-10 |
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Owner name: SUZHOU AISIYUAN PHOTOELECTRIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: CHENGDU CHUANGYUAN ELECTRONICS CO., LTD. Effective date: 20150106 |
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Effective date of registration: 20150106 Address after: 215000 Suzhou Industrial Park, Jiangsu Road, No. 199 Applicant after: SUZHOU AISIYUAN PHOTOELECTRIC TECHNOLOGY CO.,LTD. Address before: 610000 No. 119 Dashi West Road, Chengdu, Sichuan, Wuhou District Applicant before: CHENGDU CHUANGYUAN ELECTRONICS Co.,Ltd. |
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Effective date of registration: 20180427 Address after: 610041 119 Wuhou District Dashi Road, Chengdu, Sichuan Patentee after: CHENGDU CHUANGYUAN ELECTRONICS Co.,Ltd. Address before: 215000 199 Ren Yan Road, Suzhou Industrial Park, Jiangsu Patentee before: SUZHOU AISIYUAN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20240823 Address after: 1F8-14, 2F8-10, Building 18, "Strait Small and Medium Enterprise Incubation Park", No. 188, West Section of Kexing Road, Chengdu Cross-Strait Science and Technology Industry Development Park, Wenjiang District, Chengdu City, Sichuan Province, China Patentee after: Sichuan Xuanguang Liying Medical Technology Co.,Ltd. Country or region after: China Address before: 610041 119 Wuhou District Dashi Road, Chengdu, Sichuan Patentee before: CHENGDU CHUANGYUAN ELECTRONICS Co.,Ltd. Country or region before: China |